WO2008118506A2 - Méthode et système d'élaboration d'une cellule de mémoire non volatile à contenu adressable à l'aide d'un élément flotox - Google Patents

Méthode et système d'élaboration d'une cellule de mémoire non volatile à contenu adressable à l'aide d'un élément flotox Download PDF

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Publication number
WO2008118506A2
WO2008118506A2 PCT/US2008/050327 US2008050327W WO2008118506A2 WO 2008118506 A2 WO2008118506 A2 WO 2008118506A2 US 2008050327 W US2008050327 W US 2008050327W WO 2008118506 A2 WO2008118506 A2 WO 2008118506A2
Authority
WO
WIPO (PCT)
Prior art keywords
cam
flotox
transistor
search
providing
Prior art date
Application number
PCT/US2008/050327
Other languages
English (en)
Other versions
WO2008118506A3 (fr
Inventor
Adrian Sfarti
Original Assignee
Atmel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corporation filed Critical Atmel Corporation
Publication of WO2008118506A2 publication Critical patent/WO2008118506A2/fr
Publication of WO2008118506A3 publication Critical patent/WO2008118506A3/fr

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements

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  • Read Only Memory (AREA)

Abstract

L'invention porte sur une méthode et un système d'élaboration d'une cellule de mémoire à contenu adressable (CAM), et sur la CAM elle-même. Dans un aspect, la méthode et le système incluent plusieurs cellules de mémoire, au moins une ligne de recherche et au moins une ligne de concordance. Chacune des cellules de CAM comporte un élément FLOTOX (oxyde de tunnel/grille flottante) comprenant un seul transistor de grille flottante et un transistor de sélection haute tension et peut stocker au moins une partie de mot de données. Chaque cellule CAM comporte également de préférence au moins un transistor basse tension servant à comparer la partie de mot de données stocké dans l'élément FLOTOX avec la partie de mot recherché. La ou les ligne (s) de recherche fournissent les mot (s) recherchés. Le comparateur est connecté à la ou aux ligne (s) de recherche et aux cellules de mémoire.
PCT/US2008/050327 2007-01-05 2008-01-05 Méthode et système d'élaboration d'une cellule de mémoire non volatile à contenu adressable à l'aide d'un élément flotox WO2008118506A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1303907A 2007-01-05 2007-01-05
US11/013,039 2007-01-05

Publications (2)

Publication Number Publication Date
WO2008118506A2 true WO2008118506A2 (fr) 2008-10-02
WO2008118506A3 WO2008118506A3 (fr) 2009-01-08

Family

ID=39789207

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/050327 WO2008118506A2 (fr) 2007-01-05 2008-01-05 Méthode et système d'élaboration d'une cellule de mémoire non volatile à contenu adressable à l'aide d'un élément flotox

Country Status (1)

Country Link
WO (1) WO2008118506A2 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051948A (en) * 1988-02-23 1991-09-24 Mitsubishi Denki Kabushiki Kaisha Content addressable memory device
US6563501B2 (en) * 2000-07-28 2003-05-13 Adrian Sfarti Bicubic surface rendering
US20030189570A1 (en) * 2000-07-28 2003-10-09 Adrian Sfarti Bicubic surface rendering
US20060125824A1 (en) * 2004-12-14 2006-06-15 Adrian Sfarti Rapid zippering for real time tesselation of bicubic surfaces

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051948A (en) * 1988-02-23 1991-09-24 Mitsubishi Denki Kabushiki Kaisha Content addressable memory device
US6563501B2 (en) * 2000-07-28 2003-05-13 Adrian Sfarti Bicubic surface rendering
US20030189570A1 (en) * 2000-07-28 2003-10-09 Adrian Sfarti Bicubic surface rendering
US20060125824A1 (en) * 2004-12-14 2006-06-15 Adrian Sfarti Rapid zippering for real time tesselation of bicubic surfaces

Also Published As

Publication number Publication date
WO2008118506A3 (fr) 2009-01-08

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