WO2008110159A3 - Method and device for determining a fracture in crystalline material - Google Patents

Method and device for determining a fracture in crystalline material Download PDF

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Publication number
WO2008110159A3
WO2008110159A3 PCT/DE2008/000439 DE2008000439W WO2008110159A3 WO 2008110159 A3 WO2008110159 A3 WO 2008110159A3 DE 2008000439 W DE2008000439 W DE 2008000439W WO 2008110159 A3 WO2008110159 A3 WO 2008110159A3
Authority
WO
WIPO (PCT)
Prior art keywords
fracture
determining
crystalline material
fractures
transmitted light
Prior art date
Application number
PCT/DE2008/000439
Other languages
German (de)
French (fr)
Other versions
WO2008110159A2 (en
Inventor
Marc Hemsendorf
Christian Probst
Original Assignee
Gp Solar Gmbh
Marc Hemsendorf
Christian Probst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gp Solar Gmbh, Marc Hemsendorf, Christian Probst filed Critical Gp Solar Gmbh
Priority to DE112008001330T priority Critical patent/DE112008001330A5/en
Publication of WO2008110159A2 publication Critical patent/WO2008110159A2/en
Publication of WO2008110159A3 publication Critical patent/WO2008110159A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/958—Inspecting transparent materials or objects, e.g. windscreens
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)

Abstract

The invention relates to a method for determining a fracture (18) in crystalline material. According to the invention, a position function of the brightness of the transmitted light image (16) is obtained from a transmitted light image (16) of the material, and frequency information of the position function is obtained therefrom. It is then decided is a fracture (18) exists if the frequencies characterising the fracture (18) are present. It is also possible to detect externally invisible fractures (18) in a wafer (4) and to reliably identify grain boundaries (20) and fractures (18).
PCT/DE2008/000439 2007-03-15 2008-03-15 Method and device for determining a fracture in crystalline material WO2008110159A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE112008001330T DE112008001330A5 (en) 2007-03-15 2008-03-15 Method and apparatus for determining a fracture in crystalline material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007012525 2007-03-15
DE102007012525.0 2007-03-15

Publications (2)

Publication Number Publication Date
WO2008110159A2 WO2008110159A2 (en) 2008-09-18
WO2008110159A3 true WO2008110159A3 (en) 2008-11-20

Family

ID=39710976

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/000439 WO2008110159A2 (en) 2007-03-15 2008-03-15 Method and device for determining a fracture in crystalline material

Country Status (2)

Country Link
DE (1) DE112008001330A5 (en)
WO (1) WO2008110159A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108878307B (en) * 2017-05-11 2020-12-08 北京北方华创微电子装备有限公司 Chip detection system and chip detection method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0309758A2 (en) * 1987-09-23 1989-04-05 Isotopen-Technik Dr. Sauerwein Gmbh Procedure and facility for determination and evaluation of surface cracks on workpieces
WO1999001985A1 (en) * 1997-07-03 1999-01-14 Neopath, Inc. Method and apparatus for semiconductor wafer and lcd inspection using multidimensional image decomposition and synthesis
WO2002040970A1 (en) * 2000-11-15 2002-05-23 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
US20060278831A1 (en) * 2005-06-14 2006-12-14 Mitsubishi Denki Kabushiki Kaisha Infrared inspection apparatus, infrared inspecting method and manufacturing method of semiconductor wafer
EP1801569A2 (en) * 2005-12-23 2007-06-27 Basler Aktiengesellschaft Method and device for detecting cracks in silicon wafers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0309758A2 (en) * 1987-09-23 1989-04-05 Isotopen-Technik Dr. Sauerwein Gmbh Procedure and facility for determination and evaluation of surface cracks on workpieces
WO1999001985A1 (en) * 1997-07-03 1999-01-14 Neopath, Inc. Method and apparatus for semiconductor wafer and lcd inspection using multidimensional image decomposition and synthesis
WO2002040970A1 (en) * 2000-11-15 2002-05-23 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
US20060278831A1 (en) * 2005-06-14 2006-12-14 Mitsubishi Denki Kabushiki Kaisha Infrared inspection apparatus, infrared inspecting method and manufacturing method of semiconductor wafer
EP1801569A2 (en) * 2005-12-23 2007-06-27 Basler Aktiengesellschaft Method and device for detecting cracks in silicon wafers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ZIKUAN CHEN ET AL: "Subband correlation of Daubechies wavelet representations", OPTICAL ENGINEERING, SOC. OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS. BELLINGHAM, vol. 40, no. 3, 1 March 2001 (2001-03-01), pages 362 - 371, XP002458776, ISSN: 0091-3286 *

Also Published As

Publication number Publication date
DE112008001330A5 (en) 2010-02-18
WO2008110159A2 (en) 2008-09-18

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