WO2008105257A1 - Circuit haute fréquence - Google Patents

Circuit haute fréquence Download PDF

Info

Publication number
WO2008105257A1
WO2008105257A1 PCT/JP2008/052678 JP2008052678W WO2008105257A1 WO 2008105257 A1 WO2008105257 A1 WO 2008105257A1 JP 2008052678 W JP2008052678 W JP 2008052678W WO 2008105257 A1 WO2008105257 A1 WO 2008105257A1
Authority
WO
WIPO (PCT)
Prior art keywords
node
terminal
circuit
outputs
output
Prior art date
Application number
PCT/JP2008/052678
Other languages
English (en)
Japanese (ja)
Inventor
Noriaki Matsuno
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Publication of WO2008105257A1 publication Critical patent/WO2008105257A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/32—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45138—Two or more differential amplifiers in IC-block form are combined, e.g. measuring amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45352—Indexing scheme relating to differential amplifiers the AAC comprising a combination of a plurality of transistors, e.g. Darlington coupled transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

Un circuit haute fréquence comprend : un premier circuit d'amplification (3) ayant une première borne d'entrée, un premier noeud qui amplifie de façon non inverseuse un signal d'entrée en vue d'une sortie, et un second noeud qui amplifie de façon inverseuse le signal d'entrée en vue d'une sortie ; un second circuit d'amplification (4) ayant une seconde borne d'entrée, un troisième noeud qui amplifie de façon non inverseuse le signal d'entrée en vue d'une sortie, et un quatrième noeud qui amplifie de façon inverseuse le signal d'entrée en vue d'une sortie ; un premier circuit d'addition (9) qui ajoute les sorties des premier et quatrième noeuds et émet le résultat d'addition ; et un second circuit d'addition (10) qui ajoute les sorties des second et troisième noeuds et émet le résultat d'addition. Chacun des circuits d'amplification (3, 4) comprend un transistor ayant une électrode de grille connectée à la première ou à la seconde borne d'entrée, un premier circuit à deux bornes ayant une borne connectée à la source du transistor et au premier ou au troisième noeud et l'autre borne connectée à un premier potentiel de référence de l'autre borne, et un second circuit à deux bornes ayant un borne connectée au côté drain du transistor et au second ou au quatrième noeud et l'autre borne connectée à un second potentiel de référence.
PCT/JP2008/052678 2007-02-26 2008-02-18 Circuit haute fréquence WO2008105257A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007045623 2007-02-26
JP2007-045623 2007-02-26

Publications (1)

Publication Number Publication Date
WO2008105257A1 true WO2008105257A1 (fr) 2008-09-04

Family

ID=39721093

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052678 WO2008105257A1 (fr) 2007-02-26 2008-02-18 Circuit haute fréquence

Country Status (1)

Country Link
WO (1) WO2008105257A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011109331A (ja) * 2009-11-16 2011-06-02 Sumitomo Electric Ind Ltd トランスインピーダンスアンプ
JP2012169836A (ja) * 2011-02-14 2012-09-06 Fujitsu Semiconductor Ltd 差動単相変換回路
WO2013014881A1 (fr) * 2011-07-27 2013-01-31 パナソニック株式会社 Circuit de distribution électrique
CN106487354A (zh) * 2015-09-01 2017-03-08 安桥株式会社 音乐再生装置
US9974917B2 (en) 2012-12-20 2018-05-22 Koninklijke Philips N.V. Inline adapter for a respiratory therapy device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163809A (ja) * 1996-11-26 1998-06-19 Murata Mfg Co Ltd 不平衡−平衡変換回路
JP2002305418A (ja) * 2001-04-05 2002-10-18 Mitsubishi Electric Corp 増幅回路
JP2005223638A (ja) * 2004-02-05 2005-08-18 Sumitomo Electric Ind Ltd 前置増幅器
JP2006115307A (ja) * 2004-10-15 2006-04-27 Mitsubishi Electric Corp 高周波増幅器及び差動増幅器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163809A (ja) * 1996-11-26 1998-06-19 Murata Mfg Co Ltd 不平衡−平衡変換回路
JP2002305418A (ja) * 2001-04-05 2002-10-18 Mitsubishi Electric Corp 増幅回路
JP2005223638A (ja) * 2004-02-05 2005-08-18 Sumitomo Electric Ind Ltd 前置増幅器
JP2006115307A (ja) * 2004-10-15 2006-04-27 Mitsubishi Electric Corp 高周波増幅器及び差動増幅器

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011109331A (ja) * 2009-11-16 2011-06-02 Sumitomo Electric Ind Ltd トランスインピーダンスアンプ
JP2012169836A (ja) * 2011-02-14 2012-09-06 Fujitsu Semiconductor Ltd 差動単相変換回路
WO2013014881A1 (fr) * 2011-07-27 2013-01-31 パナソニック株式会社 Circuit de distribution électrique
JP2013030934A (ja) * 2011-07-27 2013-02-07 Panasonic Corp 電力分配回路
US9543760B2 (en) 2011-07-27 2017-01-10 Panasonic Intellectual Property Management Co., Ltd. Power distribution circuit
US9974917B2 (en) 2012-12-20 2018-05-22 Koninklijke Philips N.V. Inline adapter for a respiratory therapy device
RU2657953C2 (ru) * 2012-12-20 2018-06-18 Конинклейке Филипс Н.В. Встраиваемый адаптер для устройства респираторной терапии
CN106487354A (zh) * 2015-09-01 2017-03-08 安桥株式会社 音乐再生装置

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