WO2008102806A1 - ＧａＮ系半導体素子の製造方法 - Google Patents

ＧａＮ系半導体素子の製造方法 Download PDF

Info

Publication number
WO2008102806A1
WO2008102806A1 PCT/JP2008/052861 JP2008052861W WO2008102806A1 WO 2008102806 A1 WO2008102806 A1 WO 2008102806A1 JP 2008052861 W JP2008052861 W JP 2008052861W WO 2008102806 A1 WO2008102806 A1 WO 2008102806A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
electrode
drain
source
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/052861
Other languages
English (en)
French (fr)
Inventor
Hirotaka Otake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of WO2008102806A1 publication Critical patent/WO2008102806A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

ソース電極やドレイン電極のアニール処理を行っても、ゲート領域の半導体層界面が劣化しないＧａＮ系半導体素子の製造方法を提供する。 　サファイア基板１上にアンドープＧａＮ層２、ｎ型ＡｌＧａＮドレイン層３、ｎ型ＧａＮ層４、ｐ型ＧａＮチャネル層５、ｎ型ＧａＮソース層６が形成されている。ｎ型ＡｌＧａＮドレイン層３～ｎ型ＧａＮソース層６に至る積層構造を、断面がほぼ矩形となるようにｎ型ＧａＮ層ソース層６からｎ型ＡｌＧａＮドレイン層３が露出する深さまでエッチングして、ドレイン電極８とソース電極７とを作製し、電極アニール処理を行う。その後、ゲートを形成するためのエッチングを行い、ゲート絶縁膜９、ゲート電極１０を形成する。
PCT/JP2008/052861 2007-02-20 2008-02-20 ＧａＮ系半導体素子の製造方法 Ceased WO2008102806A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-039701 2007-02-20
JP2007039701A JP2008205199A (ja) 2007-02-20 2007-02-20 ＧａＮ系半導体素子の製造方法

Publications (1)

Publication Number Publication Date
WO2008102806A1 true WO2008102806A1 (ja) 2008-08-28

Family

ID=39710080

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052861 Ceased WO2008102806A1 (ja) 2007-02-20 2008-02-20 ＧａＮ系半導体素子の製造方法

Country Status (2)

Country Link
JP (1) JP2008205199A (ja)
WO (1) WO2008102806A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097477A (zh) * 2010-12-15 2011-06-15 复旦大学 带栅极的mis及mim器件
CN116960174A (zh) * 2023-09-19 2023-10-27 广东致能科技有限公司 一种p沟道半导体器件及其制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101018239B1 (ko) * 2008-11-07 2011-03-03 삼성엘이디 주식회사 질화물계 이종접합 전계효과 트랜지스터
US8981434B2 (en) 2009-08-31 2015-03-17 Renesas Electronics Corporation Semiconductor device and field effect transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208760A (ja) * 1999-01-13 2000-07-28 Furukawa Electric Co Ltd:The 電界効果トランジスタ
JP2006286954A (ja) * 2005-03-31 2006-10-19 Eudyna Devices Inc 半導体装置及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208760A (ja) * 1999-01-13 2000-07-28 Furukawa Electric Co Ltd:The 電界効果トランジスタ
JP2006286954A (ja) * 2005-03-31 2006-10-19 Eudyna Devices Inc 半導体装置及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097477A (zh) * 2010-12-15 2011-06-15 复旦大学 带栅极的mis及mim器件
CN116960174A (zh) * 2023-09-19 2023-10-27 广东致能科技有限公司 一种p沟道半导体器件及其制备方法
CN116960174B (zh) * 2023-09-19 2024-01-23 广东致能科技有限公司 一种p沟道半导体器件及其制备方法

Also Published As

Publication number Publication date
JP2008205199A (ja) 2008-09-04

Similar Documents

Publication Publication Date Title
US9559012B1 (en) Gallium nitride complementary transistors
KR101813177B1 (ko) 고전자이동도 트랜지스터 및 그 제조방법
KR101910973B1 (ko) 고 전자 이동도 트랜지스터 및 그 제조방법
KR101922120B1 (ko) 고전자이동도 트랜지스터 및 그 제조방법
CN102856361B (zh) 具有双面场板的晶体管元件及其制造方法
US8772834B2 (en) High electron mobility transistor and method of driving the same
CN107112241B (zh) 半导体装置
US9252255B2 (en) High electron mobility transistor and method of manufacturing the same
JP2009060096A5 (ja)
TW200605350A (en) Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
JP2009200395A (ja) Ｈｆｅｔおよびその製造方法
JP2010522435A5 (ja)
JP2015529019A5 (ja)
WO2009019837A1 (ja) 炭化珪素半導体素子およびその製造方法
EP2230686A3 (en) Method of manufacturing semiconductor device
JP2010238982A (ja) 化合物半導体装置及びその製造方法
TW200633125A (en) Semiconductor device and method of semiconductor device
EP2333823A3 (en) Highly conductive source/drain contacts in lll- nitride transistors
TW200639919A (en) Method of fabricating a transistor having a triple channel in a memory device
KR101599618B1 (ko) 반도체 장치
CN204792797U (zh) 具有场板的半导体部件
JP2010258313A5 (ja)
WO2011051015A3 (en) Aluminum containing metal layer for threshold voltage shift
WO2006031654A3 (en) Hemt device and method of making
KR20190112523A (ko) 이종접합 전계효과 트랜지스터 및 그 제조 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08711667

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08711667

Country of ref document: EP

Kind code of ref document: A1