WO2008102788A1 - Programmable low-noise amplifier - Google Patents

Programmable low-noise amplifier Download PDF

Info

Publication number
WO2008102788A1
WO2008102788A1 PCT/JP2008/052811 JP2008052811W WO2008102788A1 WO 2008102788 A1 WO2008102788 A1 WO 2008102788A1 JP 2008052811 W JP2008052811 W JP 2008052811W WO 2008102788 A1 WO2008102788 A1 WO 2008102788A1
Authority
WO
WIPO (PCT)
Prior art keywords
gain
amplifier
noise
transistor
noise amplifier
Prior art date
Application number
PCT/JP2008/052811
Other languages
French (fr)
Japanese (ja)
Inventor
Akihiko Yoneya
Original Assignee
Nagoya Industrial Science Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nagoya Industrial Science Research Institute filed Critical Nagoya Industrial Science Research Institute
Priority to JP2009500202A priority Critical patent/JPWO2008102788A1/en
Publication of WO2008102788A1 publication Critical patent/WO2008102788A1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/243—A series resonance being added in series in the input circuit, e.g. base, gate, of an amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/366—Multiple MOSFETs are coupled in parallel
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/492—A coil being added in the source circuit of a transistor amplifier stage as degenerating element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/61—Indexing scheme relating to amplifiers the cascode amplifier has more than one common gate stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Amplifiers (AREA)

Abstract

A low-noise amplifier used in a small-size tuner should have features of power saving and noise lowering. In order to lower the noise, it is preferable that a gain be changed according to the level of the inputted signal. Moreover, in order save power or reduce voltage, it is necessary to reduce the number of longitudinally layered stages of a transistor. For this, provided is a programmable gain-variable low-noise amplifier including: a fixed amplifier formed by a pair of transistors which are cascode-connected with a transistor having a grounded gate; and a plurality of amplifiers having an identical absolute value of the gain formed by an amplifier which adds the gain of the fixed amplifier and an amplifier which subtracts the gain of the fixed amplifier. By selecting the amplifiers by a switch, it is possible to change the gain. The transistor has two-stages of longitudinal layering.
PCT/JP2008/052811 2007-02-20 2008-02-20 Programmable low-noise amplifier WO2008102788A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009500202A JPWO2008102788A1 (en) 2007-02-20 2008-02-20 Programmable low noise amplifier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007038983 2007-02-20
JP2007-038983 2007-02-20

Publications (1)

Publication Number Publication Date
WO2008102788A1 true WO2008102788A1 (en) 2008-08-28

Family

ID=39710063

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052811 WO2008102788A1 (en) 2007-02-20 2008-02-20 Programmable low-noise amplifier

Country Status (2)

Country Link
JP (1) JPWO2008102788A1 (en)
WO (1) WO2008102788A1 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2955219A1 (en) * 2010-01-14 2011-07-15 St Microelectronics Sa AMPLIFIER DEPHASEUR
JP2013021438A (en) * 2011-07-08 2013-01-31 New Japan Radio Co Ltd Frequency conversion circuit
JP2013081202A (en) * 2008-01-04 2013-05-02 Qualcomm Inc Multi-linearity mode lna having deboost current path
JP6072387B1 (en) * 2016-03-23 2017-02-01 三菱電機株式会社 Variable gain amplifier
EP2383885A4 (en) * 2009-01-26 2017-06-07 Sumitomo Electric Industries, Ltd. Transimpedance amplifier
JP2018501695A (en) * 2014-11-13 2018-01-18 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ Receiver front-end architecture for in-band carrier aggregation
TWI672903B (en) * 2018-10-03 2019-09-21 立積電子股份有限公司 Amplifier circuit
US11870405B2 (en) 2017-04-04 2024-01-09 Psemi Corporation Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass
US11881828B2 (en) 2017-04-04 2024-01-23 Psemi Corporation Tunable effective inductance for multi-gain LNA with inductive source degeneration
US12040757B2 (en) 2018-10-03 2024-07-16 Richwave Technology Corp. Amplifier circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09321577A (en) * 1996-03-29 1997-12-12 Toshiba Corp Variable attenuator
JPH10209813A (en) * 1997-01-24 1998-08-07 Murata Mfg Co Ltd Unbalanced/balanced conversion circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09321577A (en) * 1996-03-29 1997-12-12 Toshiba Corp Variable attenuator
JPH10209813A (en) * 1997-01-24 1998-08-07 Murata Mfg Co Ltd Unbalanced/balanced conversion circuit

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013081202A (en) * 2008-01-04 2013-05-02 Qualcomm Inc Multi-linearity mode lna having deboost current path
JP2013081201A (en) * 2008-01-04 2013-05-02 Qualcomm Inc Multi-linearity mode lna having deboost current path
EP2383885A4 (en) * 2009-01-26 2017-06-07 Sumitomo Electric Industries, Ltd. Transimpedance amplifier
FR2955219A1 (en) * 2010-01-14 2011-07-15 St Microelectronics Sa AMPLIFIER DEPHASEUR
EP2348632A1 (en) * 2010-01-14 2011-07-27 STMicroelectronics SA Phase shifting amplifier
US8405462B2 (en) 2010-01-14 2013-03-26 Stmicroelectronics S.A. Phase-shift amplifier
JP2013021438A (en) * 2011-07-08 2013-01-31 New Japan Radio Co Ltd Frequency conversion circuit
JP2018501695A (en) * 2014-11-13 2018-01-18 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ Receiver front-end architecture for in-band carrier aggregation
WO2017163334A1 (en) * 2016-03-23 2017-09-28 三菱電機株式会社 Variable gain amplifier
JP6072387B1 (en) * 2016-03-23 2017-02-01 三菱電機株式会社 Variable gain amplifier
US10581395B2 (en) 2016-03-23 2020-03-03 Mitsubishi Electric Corporation Variable gain amplifier
US11870405B2 (en) 2017-04-04 2024-01-09 Psemi Corporation Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass
US11881828B2 (en) 2017-04-04 2024-01-23 Psemi Corporation Tunable effective inductance for multi-gain LNA with inductive source degeneration
TWI672903B (en) * 2018-10-03 2019-09-21 立積電子股份有限公司 Amplifier circuit
US11108366B2 (en) 2018-10-03 2021-08-31 Richwave Technology Corp. Amplifier circuit
US12040757B2 (en) 2018-10-03 2024-07-16 Richwave Technology Corp. Amplifier circuit

Also Published As

Publication number Publication date
JPWO2008102788A1 (en) 2010-05-27

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