WO2008099725A1 - 高分子化合物、レジスト組成物及びレジストパターン形成方法 - Google Patents

高分子化合物、レジスト組成物及びレジストパターン形成方法 Download PDF

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Publication number
WO2008099725A1
WO2008099725A1 PCT/JP2008/051907 JP2008051907W WO2008099725A1 WO 2008099725 A1 WO2008099725 A1 WO 2008099725A1 JP 2008051907 W JP2008051907 W JP 2008051907W WO 2008099725 A1 WO2008099725 A1 WO 2008099725A1
Authority
WO
WIPO (PCT)
Prior art keywords
polymeric compound
group
alkyl group
formation
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/051907
Other languages
English (en)
French (fr)
Inventor
Jun Iwashita
Sho Abe
Makiko Irie
Takeshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007302250A external-priority patent/JP5314882B2/ja
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to US12/449,547 priority Critical patent/US8021824B2/en
Publication of WO2008099725A1 publication Critical patent/WO2008099725A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

下記一般式（ａ０－１）で表される構成単位（ａ０）を有する高分子化合物。 　　【化１】 　　　・・・（ａ０－１）  ［式（ａ０－１）中、Ｒ１は水素原子、炭素数１～５のアルキル基または炭素数１～５のフッ素化アルキル基であり；Ｒ２、Ｒ３はそれぞれ独立して水素原子、アルキル基、若しくはアルコキシ基、または結合して任意の位置に酸素原子若しくは硫黄原子を含んでもよいアルキレン基、－Ｏ－、若しくは－Ｓ－であり；Ｒ４、Ｒ５はそれぞれ独立して水素原子、任意の位置に酸素原子を含んでもよいアルキル基、任意の位置に酸素原子を含んでもよいシクロアルキル基、またはアルコキシカルボニル基を表す。］
PCT/JP2008/051907 2007-02-15 2008-02-06 高分子化合物、レジスト組成物及びレジストパターン形成方法 Ceased WO2008099725A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/449,547 US8021824B2 (en) 2007-02-15 2008-02-06 Polymer compound, resist composition and method of forming resist pattern

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-034588 2007-02-15
JP2007034588 2007-02-15
JP2007-302250 2007-11-21
JP2007302250A JP5314882B2 (ja) 2007-02-15 2007-11-21 高分子化合物、レジスト組成物及びレジストパターン形成方法

Publications (1)

Publication Number Publication Date
WO2008099725A1 true WO2008099725A1 (ja) 2008-08-21

Family

ID=39689963

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051907 Ceased WO2008099725A1 (ja) 2007-02-15 2008-02-06 高分子化合物、レジスト組成物及びレジストパターン形成方法

Country Status (1)

Country Link
WO (1) WO2008099725A1 (ja)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289865A (en) * 1979-03-21 1981-09-15 Eastman Kodak Company Polymers acryloyloxyarylenesulfonamides
JP2001296663A (ja) * 2000-02-26 2001-10-26 Shipley Co Llc フォトレジスト組成物
JP2003186191A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
JP2003525311A (ja) * 1999-02-05 2003-08-26 ザ ビー．エフ．グッドリッチ カンパニー ノルボルネンスルホンアミドポリマーの製造法
JP2004117883A (ja) * 2002-09-26 2004-04-15 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2004151355A (ja) * 2002-10-30 2004-05-27 Fuji Photo Film Co Ltd ポジ型レジスト組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289865A (en) * 1979-03-21 1981-09-15 Eastman Kodak Company Polymers acryloyloxyarylenesulfonamides
JP2003525311A (ja) * 1999-02-05 2003-08-26 ザ ビー．エフ．グッドリッチ カンパニー ノルボルネンスルホンアミドポリマーの製造法
JP2001296663A (ja) * 2000-02-26 2001-10-26 Shipley Co Llc フォトレジスト組成物
JP2003186191A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
JP2004117883A (ja) * 2002-09-26 2004-04-15 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2004151355A (ja) * 2002-10-30 2004-05-27 Fuji Photo Film Co Ltd ポジ型レジスト組成物

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