WO2008090727A1 - Nitride semiconductor optical element - Google Patents

Nitride semiconductor optical element Download PDF

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Publication number
WO2008090727A1
WO2008090727A1 PCT/JP2008/000027 JP2008000027W WO2008090727A1 WO 2008090727 A1 WO2008090727 A1 WO 2008090727A1 JP 2008000027 W JP2008000027 W JP 2008000027W WO 2008090727 A1 WO2008090727 A1 WO 2008090727A1
Authority
WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
end surface
optical element
semiconductor optical
semiconductor laser
Prior art date
Application number
PCT/JP2008/000027
Other languages
French (fr)
Japanese (ja)
Inventor
Kazuhisa Fukuda
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2008554995A priority Critical patent/JPWO2008090727A1/en
Publication of WO2008090727A1 publication Critical patent/WO2008090727A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Provided is a highly reliable high power semiconductor laser. The semiconductor laser has an active layer composed of a III nitride semiconductor including Ga as a constituent element, and emits a laser beam from an end surface of the active layer. The semiconductor laser is arranged on the end surface from which the laser beam is to be emitted, and is provided with a protection film composed of a dielectric film. A part of a region of the dielectric film in contact with the end surface includes carbon.
PCT/JP2008/000027 2007-01-25 2008-01-16 Nitride semiconductor optical element WO2008090727A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008554995A JPWO2008090727A1 (en) 2007-01-25 2008-01-16 Nitride-based semiconductor optical device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-015606 2007-01-25
JP2007015606 2007-01-25

Publications (1)

Publication Number Publication Date
WO2008090727A1 true WO2008090727A1 (en) 2008-07-31

Family

ID=39644302

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000027 WO2008090727A1 (en) 2007-01-25 2008-01-16 Nitride semiconductor optical element

Country Status (2)

Country Link
JP (1) JPWO2008090727A1 (en)
WO (1) WO2008090727A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062300A (en) * 2008-09-03 2010-03-18 Rohm Co Ltd Nitride semiconductor element and method of manufacturing the same
US8422527B2 (en) 2008-03-05 2013-04-16 Rohm Co., Ltd. Nitride based semiconductor device and fabrication method for the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290281A (en) * 1976-01-22 1977-07-29 Nec Corp Semiconductor laser device
JPS60107883A (en) * 1983-11-16 1985-06-13 Hitachi Ltd Semiconductor laser
JPH09266354A (en) * 1996-03-29 1997-10-07 Toshiba Corp Compound semiconductor light emitting element
JPH09270569A (en) * 1996-01-25 1997-10-14 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPH10190139A (en) * 1996-12-20 1998-07-21 Nec Corp Manufacture of semiconductor laser element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290281A (en) * 1976-01-22 1977-07-29 Nec Corp Semiconductor laser device
JPS60107883A (en) * 1983-11-16 1985-06-13 Hitachi Ltd Semiconductor laser
JPH09270569A (en) * 1996-01-25 1997-10-14 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPH09266354A (en) * 1996-03-29 1997-10-07 Toshiba Corp Compound semiconductor light emitting element
JPH10190139A (en) * 1996-12-20 1998-07-21 Nec Corp Manufacture of semiconductor laser element

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FURUSE T. ET AL.: "Insulating carbon coating on (AlGa)As DH laser facets", APPL. PHYS. LETT., vol. 33, no. 4, 15 August 1978 (1978-08-15), pages 317 - 318 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8422527B2 (en) 2008-03-05 2013-04-16 Rohm Co., Ltd. Nitride based semiconductor device and fabrication method for the same
JP2010062300A (en) * 2008-09-03 2010-03-18 Rohm Co Ltd Nitride semiconductor element and method of manufacturing the same

Also Published As

Publication number Publication date
JPWO2008090727A1 (en) 2010-05-13

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