WO2008089990A3 - Method for operating an immersion lithography apparatus - Google Patents

Method for operating an immersion lithography apparatus Download PDF

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Publication number
WO2008089990A3
WO2008089990A3 PCT/EP2008/000566 EP2008000566W WO2008089990A3 WO 2008089990 A3 WO2008089990 A3 WO 2008089990A3 EP 2008000566 W EP2008000566 W EP 2008000566W WO 2008089990 A3 WO2008089990 A3 WO 2008089990A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical element
lithography apparatus
operating
gap
immersion lithography
Prior art date
Application number
PCT/EP2008/000566
Other languages
French (fr)
Other versions
WO2008089990A2 (en
Inventor
Julian Kaller
Ruediger Duesing
Jens Philipps
Rolf Freimann
Original Assignee
Zeiss Carl Smt Ag
Julian Kaller
Ruediger Duesing
Jens Philipps
Rolf Freimann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Ag, Julian Kaller, Ruediger Duesing, Jens Philipps, Rolf Freimann filed Critical Zeiss Carl Smt Ag
Publication of WO2008089990A2 publication Critical patent/WO2008089990A2/en
Publication of WO2008089990A3 publication Critical patent/WO2008089990A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention relates to a method of operating an immersion lithography apparatus comprising the steps of providing an immersion lithography apparatus comprising at least one optical element (2) and a lithography substrate (6), wherein a gap is located between the optical element and the lithography substrate, and providing an immersion liquid into the gap, wherein at least part of a surface of the optical element is in contact with the immersion liquid; and performing a cleaning process for removing a deposit formed on at least said part of the surface of the optical element by supplying a cleaning fluid (3) into the gap, wherein the cleaning is effected by a chemical reaction between a chemical species in said cleaning fluid and the deposit. Preferably, the chemical species is an oxidizing species and the chemical reaction is an oxidation. The invention is particularly useful when an immersion liquid is used which comprises a hydrocarbon or a fluorinated hydrocarbon.
PCT/EP2008/000566 2007-01-26 2008-01-25 Method for operating an immersion lithography apparatus WO2008089990A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88678007P 2007-01-26 2007-01-26
US60/886,780 2007-01-26

Publications (2)

Publication Number Publication Date
WO2008089990A2 WO2008089990A2 (en) 2008-07-31
WO2008089990A3 true WO2008089990A3 (en) 2008-12-04

Family

ID=39373665

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/000566 WO2008089990A2 (en) 2007-01-26 2008-01-25 Method for operating an immersion lithography apparatus

Country Status (1)

Country Link
WO (1) WO2008089990A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9632426B2 (en) * 2011-01-18 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ immersion hood cleaning
US20230259037A1 (en) * 2020-07-14 2023-08-17 Asml Netherlands B.V. A fluid handling system, method and lithographic apparatus

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000323396A (en) * 1999-05-13 2000-11-24 Canon Inc Exposure method, aligner, and manufacture thereof
WO2005064412A2 (en) * 2003-12-31 2005-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050185155A1 (en) * 2004-02-19 2005-08-25 Yasuhiro Kishikawa Exposure apparatus and method
US20060050351A1 (en) * 2004-09-06 2006-03-09 Tatsuhiko Higashiki Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device
US20060132731A1 (en) * 2004-12-20 2006-06-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1777589A2 (en) * 2005-10-24 2007-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Immersion lithography apparatus and method
EP1783822A1 (en) * 2004-06-21 2007-05-09 Nikon Corporation Exposure device, exposure device member cleaning method, exposure device maintenance method, maintenance device, and device manufacturing method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000323396A (en) * 1999-05-13 2000-11-24 Canon Inc Exposure method, aligner, and manufacture thereof
WO2005064412A2 (en) * 2003-12-31 2005-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050185155A1 (en) * 2004-02-19 2005-08-25 Yasuhiro Kishikawa Exposure apparatus and method
EP1783822A1 (en) * 2004-06-21 2007-05-09 Nikon Corporation Exposure device, exposure device member cleaning method, exposure device maintenance method, maintenance device, and device manufacturing method
US20060050351A1 (en) * 2004-09-06 2006-03-09 Tatsuhiko Higashiki Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device
US20060132731A1 (en) * 2004-12-20 2006-06-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1777589A2 (en) * 2005-10-24 2007-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Immersion lithography apparatus and method

Also Published As

Publication number Publication date
WO2008089990A2 (en) 2008-07-31

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