WO2008064085A3 - Système d'assainissement des gaz d'échappement d'un réacteur de nitrure de gallium - Google Patents
Système d'assainissement des gaz d'échappement d'un réacteur de nitrure de gallium Download PDFInfo
- Publication number
- WO2008064085A3 WO2008064085A3 PCT/US2007/084857 US2007084857W WO2008064085A3 WO 2008064085 A3 WO2008064085 A3 WO 2008064085A3 US 2007084857 W US2007084857 W US 2007084857W WO 2008064085 A3 WO2008064085 A3 WO 2008064085A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group iii
- methods
- wafers
- equipment
- exhaust gases
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
La présente invention concerne des dispositifs et des procédés de traitement de semi-conducteurs et, en particulier, des procédés et des dispositifs de production continue à haut rendement d'un matériau à semi-conducteurs composés du groupe III-V adapté pour la fabrication de composants optiques et électroniques, destinés à être utilisés comme substrats de dépôt épitaxial, de tranches, etc.. Dans des modes de réalisation préférés, ces procédés et ces dispositifs sont optimisés pour produire des tranches à semi-conducteurs composés du groupe III-N (azote) et, plus spécifiquement, pour produire des tranches GaN. Le précurseur est spécifiquement fourni selon un débit massique d'au moins 50g d'un élément du groupe III/heure pendant au moins 48 heures afin de faciliter la fabrication à haut rendement du matériau à semi-conducteurs. Le débit massique du précurseur gazeux du groupe III est régulé de manière avantageuse pour délivrer la quantité désirée.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86692806P | 2006-11-22 | 2006-11-22 | |
US60/866,928 | 2006-11-22 | ||
US94283207P | 2007-06-08 | 2007-06-08 | |
US94286407P | 2007-06-08 | 2007-06-08 | |
US60/942,864 | 2007-06-08 | ||
US60/942,832 | 2007-06-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008064085A2 WO2008064085A2 (fr) | 2008-05-29 |
WO2008064085A3 true WO2008064085A3 (fr) | 2008-07-17 |
Family
ID=39430507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/084857 WO2008064085A2 (fr) | 2006-11-22 | 2007-11-15 | Système d'assainissement des gaz d'échappement d'un réacteur de nitrure de gallium |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2008064085A2 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113521953B (zh) * | 2021-07-21 | 2023-06-02 | 苏州纳维科技有限公司 | 尾气中镓源回收装置、尾气处理装置及hvpe反应器 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4362560A (en) * | 1980-11-28 | 1982-12-07 | Abrjutin Vladimir N | Process for producing high-purity gallium |
US4798701A (en) * | 1987-07-13 | 1989-01-17 | International Business Machines Corporation | Method of synthesizing amorphous group IIIA-group VA compounds |
US5151395A (en) * | 1987-03-24 | 1992-09-29 | Novapure Corporation | Bulk gas sorption and apparatus, gas containment/treatment system comprising same, and sorbent composition therefor |
US5300185A (en) * | 1991-03-29 | 1994-04-05 | Kabushiki Kaisha Toshiba | Method of manufacturing III-V group compound semiconductor |
US6406540B1 (en) * | 1999-04-27 | 2002-06-18 | The United States Of America As Represented By The Secretary Of The Air Force | Process and apparatus for the growth of nitride materials |
US6845619B2 (en) * | 2002-12-11 | 2005-01-25 | Advanced Technology Materials, Inc. | Integrated system and process for effluent abatement and energy generation |
US20060099123A1 (en) * | 2002-08-23 | 2006-05-11 | Seeley Andrew J | Utilisation of waste gas streams |
US20060169996A1 (en) * | 2002-12-27 | 2006-08-03 | General Electric Company | Crystalline composition, wafer, and semi-conductor structure |
-
2007
- 2007-11-15 WO PCT/US2007/084857 patent/WO2008064085A2/fr active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4362560A (en) * | 1980-11-28 | 1982-12-07 | Abrjutin Vladimir N | Process for producing high-purity gallium |
US5151395A (en) * | 1987-03-24 | 1992-09-29 | Novapure Corporation | Bulk gas sorption and apparatus, gas containment/treatment system comprising same, and sorbent composition therefor |
US4798701A (en) * | 1987-07-13 | 1989-01-17 | International Business Machines Corporation | Method of synthesizing amorphous group IIIA-group VA compounds |
US5300185A (en) * | 1991-03-29 | 1994-04-05 | Kabushiki Kaisha Toshiba | Method of manufacturing III-V group compound semiconductor |
US6406540B1 (en) * | 1999-04-27 | 2002-06-18 | The United States Of America As Represented By The Secretary Of The Air Force | Process and apparatus for the growth of nitride materials |
US20060099123A1 (en) * | 2002-08-23 | 2006-05-11 | Seeley Andrew J | Utilisation of waste gas streams |
US6845619B2 (en) * | 2002-12-11 | 2005-01-25 | Advanced Technology Materials, Inc. | Integrated system and process for effluent abatement and energy generation |
US20060169996A1 (en) * | 2002-12-27 | 2006-08-03 | General Electric Company | Crystalline composition, wafer, and semi-conductor structure |
Also Published As
Publication number | Publication date |
---|---|
WO2008064085A2 (fr) | 2008-05-29 |
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