WO2008047079A3 - Electron beam influencing in an electron beam lithography machine - Google Patents

Electron beam influencing in an electron beam lithography machine Download PDF

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Publication number
WO2008047079A3
WO2008047079A3 PCT/GB2007/003865 GB2007003865W WO2008047079A3 WO 2008047079 A3 WO2008047079 A3 WO 2008047079A3 GB 2007003865 W GB2007003865 W GB 2007003865W WO 2008047079 A3 WO2008047079 A3 WO 2008047079A3
Authority
WO
WIPO (PCT)
Prior art keywords
electron beam
influencing
workpiece
column
lithography machine
Prior art date
Application number
PCT/GB2007/003865
Other languages
French (fr)
Other versions
WO2008047079A2 (en
Inventor
Paul George Harris
John Melbourne Tingay
Original Assignee
Vistec Lithography Inc
Paul George Harris
John Melbourne Tingay
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vistec Lithography Inc, Paul George Harris, John Melbourne Tingay filed Critical Vistec Lithography Inc
Publication of WO2008047079A2 publication Critical patent/WO2008047079A2/en
Publication of WO2008047079A3 publication Critical patent/WO2008047079A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/07—Eliminating deleterious effects due to thermal effects or electric or magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

An electron beam lithography machine (10) comprises an electron beam column (11) for generating and issuing an electron beam for action on a workpiece (13), particularly a workpiece held by a movable stage (15). The machine further comprises an optical measuring system (17) for measuring the instantaneous column position in the zone of issue of the beam, thus at the base of the column (11), to determine an instantaneous beam datum and influencing means (22) for influencing the machine operation in dependence on the determined datum. Such influencing can include correction of beam deflection when scanning the workpiece for pattern writing or correction or control of the stage movement, particularly when the stage movement is determined on the basis of position measurement by a further optical measuring system (23). The two systems can use the same X/Y co-ordinate system and share optical components.
PCT/GB2007/003865 2006-10-16 2007-10-11 Electron beam influencing in an electron beam lithography machine WO2008047079A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0620527A GB2443016B (en) 2006-10-16 2006-10-16 Electron beam influencing in an electron beam lithography machine
GB0620527.2 2006-10-16

Publications (2)

Publication Number Publication Date
WO2008047079A2 WO2008047079A2 (en) 2008-04-24
WO2008047079A3 true WO2008047079A3 (en) 2009-02-19

Family

ID=37491606

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2007/003865 WO2008047079A2 (en) 2006-10-16 2007-10-11 Electron beam influencing in an electron beam lithography machine

Country Status (2)

Country Link
GB (1) GB2443016B (en)
WO (1) WO2008047079A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136037A (en) * 1991-11-12 1993-06-01 Nec Corp Electron beam lithographic equipment
US6160628A (en) * 1999-06-29 2000-12-12 Nikon Corporation Interferometer system and method for lens column alignment
US20020020820A1 (en) * 1998-07-28 2002-02-21 Masato Muraki Electron beam exposure apparatus and device manufacturing method
US20040113101A1 (en) * 2002-09-03 2004-06-17 Nikon Corporation Charged-particle-beam microlithography systems that detect and offset beam-perturbing displacements of optical-column components

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8422895D0 (en) * 1984-09-11 1984-10-17 Texas Instruments Ltd Electron beam apparatus
US6124596A (en) * 1997-08-28 2000-09-26 Nikon Corporation Charged-particle-beam projection apparatus and transfer methods
US6335532B1 (en) * 1998-02-27 2002-01-01 Hitachi, Ltd. Convergent charged particle beam apparatus and inspection method using same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136037A (en) * 1991-11-12 1993-06-01 Nec Corp Electron beam lithographic equipment
US20020020820A1 (en) * 1998-07-28 2002-02-21 Masato Muraki Electron beam exposure apparatus and device manufacturing method
US6160628A (en) * 1999-06-29 2000-12-12 Nikon Corporation Interferometer system and method for lens column alignment
US20040113101A1 (en) * 2002-09-03 2004-06-17 Nikon Corporation Charged-particle-beam microlithography systems that detect and offset beam-perturbing displacements of optical-column components

Also Published As

Publication number Publication date
GB0620527D0 (en) 2006-11-22
GB2443016B (en) 2009-08-26
GB2443016A (en) 2008-04-23
WO2008047079A2 (en) 2008-04-24

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