WO2008042695A3 - Semiconductor devices containing nitrided high dielectric constant films and method of forming - Google Patents

Semiconductor devices containing nitrided high dielectric constant films and method of forming Download PDF

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Publication number
WO2008042695A3
WO2008042695A3 PCT/US2007/079681 US2007079681W WO2008042695A3 WO 2008042695 A3 WO2008042695 A3 WO 2008042695A3 US 2007079681 W US2007079681 W US 2007079681W WO 2008042695 A3 WO2008042695 A3 WO 2008042695A3
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WIPO (PCT)
Prior art keywords
film
nitrided high
forming
containing film
nitrogen
Prior art date
Application number
PCT/US2007/079681
Other languages
French (fr)
Other versions
WO2008042695A2 (en
Inventor
Robert D Clark
Original Assignee
Tokyo Electron Ltd
Tokyo Electron America Inc
Robert D Clark
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Publication date
Priority claimed from US11/537,245 external-priority patent/US7767262B2/en
Priority claimed from US11/537,492 external-priority patent/US20080079111A1/en
Application filed by Tokyo Electron Ltd, Tokyo Electron America Inc, Robert D Clark filed Critical Tokyo Electron Ltd
Publication of WO2008042695A2 publication Critical patent/WO2008042695A2/en
Publication of WO2008042695A3 publication Critical patent/WO2008042695A3/en

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    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
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    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
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    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Chemical Vapour Deposition (AREA)

Abstract

A semiconductor device containing a substrate (25, 92) and a nitrided high-k film (96) on the substrate (25, 92), and method of forming a nitrided high-k film (96). The nitrided high-k film (96) contains an oxygen-containing film and a nitrogen- containing film that is oxidized through at least a portion of the thickness thereof. The nitrogen-containing film and the oxygen-containing film contain the same one or more metal elements selected from alkaline earth elements, rare earth elements, and Group IVB elements of the Periodic Table. The nitrided high-k film (96) can optionally further contain aluminum, siiicon, or aluminum and silicon. The nitrided high-k film (96) is formed on the substrate (25, 92) by a) depositing a nitrogen-containing film, and b) depositing an oxygen-containing film, wherein steps a) and b) are performed in any order, any number of times, so as to oxidize at least a portion of the thickness of the nitrogen-containing film. According to one embodiment, the method includes forming a nitrided hafnium based high-k film (96).
PCT/US2007/079681 2006-09-29 2007-09-27 Semiconductor devices containing nitrided high dielectric constant films and method of forming WO2008042695A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/537,245 2006-09-29
US11/537,245 US7767262B2 (en) 2006-09-29 2006-09-29 Nitrogen profile engineering in nitrided high dielectric constant films
US11/537,492 2006-09-29
US11/537,492 US20080079111A1 (en) 2006-09-29 2006-09-29 Semiconductor devices containing nitrided high dielectric constant films

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WO2008042695A3 true WO2008042695A3 (en) 2008-10-16

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US20220406594A1 (en) * 2021-06-18 2022-12-22 Applied Materials, Inc. Processes for depositing sib films
CN116536647A (en) * 2023-05-05 2023-08-04 浙江大学 Film for realizing low-temperature high-quality film growth and deposition method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11168096A (en) * 1997-12-04 1999-06-22 Sony Corp Formation of highly dielectric oxide film
US20050130442A1 (en) * 2003-12-11 2005-06-16 Visokay Mark R. Method for fabricating transistor gate structures and gate dielectrics thereof
EP1548839A1 (en) * 2003-12-26 2005-06-29 Semiconductor Leading Edge Technologies, Inc. Semiconductor device, method for manufacturing the same, apparatus and method for forming high-dielectric-constant film
US20050272196A1 (en) * 2004-05-31 2005-12-08 Anelva Corporation Method of depositing a higher permittivity dielectric film
US20060151823A1 (en) * 2005-01-07 2006-07-13 Shrinivas Govindarajan High dielectric constant materials

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11168096A (en) * 1997-12-04 1999-06-22 Sony Corp Formation of highly dielectric oxide film
US20050130442A1 (en) * 2003-12-11 2005-06-16 Visokay Mark R. Method for fabricating transistor gate structures and gate dielectrics thereof
EP1548839A1 (en) * 2003-12-26 2005-06-29 Semiconductor Leading Edge Technologies, Inc. Semiconductor device, method for manufacturing the same, apparatus and method for forming high-dielectric-constant film
US20050272196A1 (en) * 2004-05-31 2005-12-08 Anelva Corporation Method of depositing a higher permittivity dielectric film
US20060151823A1 (en) * 2005-01-07 2006-07-13 Shrinivas Govindarajan High dielectric constant materials

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