WO2008042691A3 - Processing system containing a hot filament hydrogen radical source for integrated substrate processing - Google Patents

Processing system containing a hot filament hydrogen radical source for integrated substrate processing Download PDF

Info

Publication number
WO2008042691A3
WO2008042691A3 PCT/US2007/079667 US2007079667W WO2008042691A3 WO 2008042691 A3 WO2008042691 A3 WO 2008042691A3 US 2007079667 W US2007079667 W US 2007079667W WO 2008042691 A3 WO2008042691 A3 WO 2008042691A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
processing system
radical source
hot filament
hydrogen radical
Prior art date
Application number
PCT/US2007/079667
Other languages
French (fr)
Other versions
WO2008042691A2 (en
Inventor
Tsukasa Matsuda
Isamu Sakuragi
Original Assignee
Tokyo Electron Ltd
Tokyo Electron America Inc
Tsukasa Matsuda
Isamu Sakuragi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/537,562 external-priority patent/US20080078325A1/en
Priority claimed from US11/537,573 external-priority patent/US20080081464A1/en
Application filed by Tokyo Electron Ltd, Tokyo Electron America Inc, Tsukasa Matsuda, Isamu Sakuragi filed Critical Tokyo Electron Ltd
Publication of WO2008042691A2 publication Critical patent/WO2008042691A2/en
Publication of WO2008042691A3 publication Critical patent/WO2008042691A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A processing system (1, 504B) and method for integrated substrate processing in a substrate processing tool (500). The processing system (1, 504B) contains a substrate holder (20) configured for supporting and controlling the temperature of the substrate (25), a hot filament hydrogen radical source (31 ) for generating hydrogen radicals, and a controller (70, 510) configured for controlling the processing system (1, 504B). The hot filament hydrogen radical source (31 ) includes a showerhead assembly (30) containing an internal volume (37) and a showerhead plate (35) having gas passages (33) facing the substrate (25) for exposing the substrate (25) to the hydrogen radicals, and at least one meta! wire filament (59, 59a, 59b, 59c) within the interna! volume (37) to thermaliy dissociate H2 gas into the hydrogen radicals. The integrated process includes pretreating exposed surfaces of an etch feature (105) in a dielectric film (113, 115, 624, 626) and an exposed metal interconnect pattern (111 A, 622A) formed underneath the etch feature (105) with a flow of hydrogen radicals generated by thermal decomposition of H2 gas by a hot filament hydrogen radical source (31 ) separated from the substrate (25) by a showerhead plate (35) containing gas passages (33) facing the substrate (25). The integrated process further includes depositing a barrier metal film (116, 628) over the pretreated exposed surfaces, and forming a Cu metal film (113) on the barrier metal film (116, 628).
PCT/US2007/079667 2006-09-29 2007-09-27 Processing system containing a hot filament hydrogen radical source for integrated substrate processing WO2008042691A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/537,562 2006-09-29
US11/537,562 US20080078325A1 (en) 2006-09-29 2006-09-29 Processing system containing a hot filament hydrogen radical source for integrated substrate processing
US11/537,573 US20080081464A1 (en) 2006-09-29 2006-09-29 Method of integrated substrated processing using a hot filament hydrogen radical souce
US11/537,573 2006-09-29

Publications (2)

Publication Number Publication Date
WO2008042691A2 WO2008042691A2 (en) 2008-04-10
WO2008042691A3 true WO2008042691A3 (en) 2008-05-22

Family

ID=38969334

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/079667 WO2008042691A2 (en) 2006-09-29 2007-09-27 Processing system containing a hot filament hydrogen radical source for integrated substrate processing

Country Status (1)

Country Link
WO (1) WO2008042691A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110070370A1 (en) 2008-05-28 2011-03-24 Aixtron Ag Thermal gradient enhanced chemical vapour deposition (tge-cvd)
JP5674645B2 (en) * 2008-05-28 2015-02-25 アイクストロン・アーゲー Temperature gradient chemical vapor deposition (TGE-CVD)
DE102014100135A1 (en) * 2014-01-08 2015-07-09 Aixtron Se Gas mixing device on a reactor with directional valve
CN109735825A (en) * 2019-01-16 2019-05-10 无锡第六元素电子薄膜科技有限公司 A method of metal substrate surface impurity graphene is removed using surfactant-free solution

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6383896B1 (en) * 1999-09-16 2002-05-07 Nissan Electric Co., Ltd. Thin film forming method and thin film forming apparatus
US6499425B1 (en) * 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
US20040105934A1 (en) * 2002-06-04 2004-06-03 Mei Chang Ruthenium layer formation for copper film deposition
US20040149211A1 (en) * 2002-07-18 2004-08-05 Jae-Young Ahn Systems including heated shower heads for thin film deposition and related methods
US20050106865A1 (en) * 2001-09-26 2005-05-19 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
WO2006057706A2 (en) * 2004-11-23 2006-06-01 Tokyo Electron Limited Method for deposition of metal layers from metal carbonyl precursors
WO2006057709A2 (en) * 2004-11-23 2006-06-01 Tokyo Electron Limited Method for deposition of metal layers from metal carbonyl precursors

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6499425B1 (en) * 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
US6383896B1 (en) * 1999-09-16 2002-05-07 Nissan Electric Co., Ltd. Thin film forming method and thin film forming apparatus
US20050106865A1 (en) * 2001-09-26 2005-05-19 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US20040105934A1 (en) * 2002-06-04 2004-06-03 Mei Chang Ruthenium layer formation for copper film deposition
US20040149211A1 (en) * 2002-07-18 2004-08-05 Jae-Young Ahn Systems including heated shower heads for thin film deposition and related methods
WO2006057706A2 (en) * 2004-11-23 2006-06-01 Tokyo Electron Limited Method for deposition of metal layers from metal carbonyl precursors
WO2006057709A2 (en) * 2004-11-23 2006-06-01 Tokyo Electron Limited Method for deposition of metal layers from metal carbonyl precursors

Also Published As

Publication number Publication date
WO2008042691A2 (en) 2008-04-10

Similar Documents

Publication Publication Date Title
WO2006057706A3 (en) Method for deposition of metal layers from metal carbonyl precursors
TW200618066A (en) Deposition of ruthenium metal layers in a thermal chemical vapor deposition process
WO2006057709A3 (en) Method for deposition of metal layers from metal carbonyl precursors
EP1473379A3 (en) Metal film production apparatus and method
JP2008538129A5 (en)
WO2005087974A3 (en) Cvd processes for the deposition of amorphous carbon films
WO2003065424A3 (en) Apparatus for cyclical deposition of thin films
WO2010025068A3 (en) Cobalt deposition on barrier surfaces
EP0936284A3 (en) Method and apparatus for producing thin films
TW200729344A (en) Amine-free deposition of metal-nitride films
US8906791B2 (en) Method of improving film non-uniformity and throughput
TW200705558A (en) Apparatus and method for heating substrate and coating and developing system
WO2005028701A3 (en) Methods and apparatus for controlling formation of deposits in a deposition system and deposition systems and methods including the same
WO2004063421A3 (en) Deposition chamber surface enhancement and resulting deposition chambers
TW200702476A (en) Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
EP0849811A3 (en) Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device
ATE551438T1 (en) CVD REACTOR WITH LOWERABLE PROCESS CHAMBER CEILING
WO2008008098A3 (en) Plasma deposition apparatus and method for making polycrystalline silicon
WO2008042691A3 (en) Processing system containing a hot filament hydrogen radical source for integrated substrate processing
US7727912B2 (en) Method of light enhanced atomic layer deposition
EP1743953B1 (en) Method for forming copper film
TW200619414A (en) Method of depositing a metal compound layer and apparatus for depositing a metal compound layer
SG159539A1 (en) Method and apparatus for controlling diffusion coating of internal passages
TW200614350A (en) Apparatus for plasma chemical vapor deposition and method for fabricating semiconductor device by using the same
US20060185593A1 (en) Chemical vapor deposition system and method of exhausting gas from the system

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07843314

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07843314

Country of ref document: EP

Kind code of ref document: A2