WO2008038460A1 - Photosensitive resin composition - Google Patents

Photosensitive resin composition Download PDF

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Publication number
WO2008038460A1
WO2008038460A1 PCT/JP2007/065300 JP2007065300W WO2008038460A1 WO 2008038460 A1 WO2008038460 A1 WO 2008038460A1 JP 2007065300 W JP2007065300 W JP 2007065300W WO 2008038460 A1 WO2008038460 A1 WO 2008038460A1
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WIPO (PCT)
Prior art keywords
group
general formula
resin composition
photosensitive resin
examples
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PCT/JP2007/065300
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French (fr)
Japanese (ja)
Inventor
Takashi Chiba
Mibuko Shimada
Shigehito Asano
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Jsr Corporation
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Priority to JP2008536295A priority Critical patent/JP5024292B2/en
Publication of WO2008038460A1 publication Critical patent/WO2008038460A1/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387Polyamides or polyimides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • H05K3/285Permanent coating compositions
    • H05K3/287Photosensitive compositions
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676Single layer compositions

Definitions

  • the present invention relates to a photosensitive resin composition used for an interlayer insulating film (passivation film), a surface protective film (overcoat film), an insulating film for a high-density mounting substrate, and the like of a semiconductor element. More specifically, a surface protective film that has excellent storage stability, high film thickness coating with high solubility in common solvents and alkali development, and can obtain a cured product with high resolution.
  • the present invention relates to a photosensitive resin composition suitable for use in interlayer insulating films and insulating films for high-density mounting substrates.
  • polyimide-based resins having excellent heat resistance, mechanical properties, and the like have been widely used for surface protective films, interlayer insulating films, and the like used in semiconductor elements of electronic devices.
  • various photosensitive polyimide resins that have been given photosensitivity to improve film formation accuracy due to high integration of semiconductor elements have been proposed, and side-chain polymerizable negative photosensitive polyimide is widely used. .
  • Patent Document 1 discloses a photosensitive composition using an aromatic polyimide precursor having an acrylic side chain.
  • this photosensitive composition has problems that it is difficult to cope with a high film thickness due to the problem of light transmittance and that the residual stress after curing is large.
  • Patent Documents 2 and 3 propose positive photosensitive polyimide compositions that can be alkali-developed.
  • the coating properties of these photosensitive polyimide compositions are not always good, and it has been difficult to cope with a high film thickness of, for example, 15 m or more.
  • a high film thickness for example, 15 m or more.
  • it can be used for surface protective films, interlayer insulating films and insulating films for high-density mounting substrates that require high film thickness coating and high resolution.
  • it was difficult there was a problem.
  • Patent Document 1 Japanese Patent Laid-Open No. 63-125510
  • Patent Document 2 Japanese Patent Laid-Open No. 3-204649
  • Patent Document 3 Japanese Patent Laid-Open No. 3-209478
  • the present invention has been made in view of the above-described problems of the prior art, and the object is to provide a high film that has excellent storage stability and high solubility in common solvents.
  • R 1 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 2 , R ;, and R 4 are independently of each other, an alkyl group having! Indicate
  • X represents a tetravalent aromatic or aliphatic hydrocarbon group
  • A represents a divalent group having a hydroxyl group
  • R 5 represents a single bond, oxygen atom, sulfur atom, sulfone group, carbonyl group, methylene group, dimethylenolemethylene group,
  • At least one group selected from the group, R 6 independently of each other represents a hydrogen atom, an acyl group, or an alkyl group, n 1 and n 2 represent an integer of 0 to 4, n 1 and n At least one of 2 is 1 or more, and at least one of R 6 is a hydrogen atom)
  • the photosensitive resin composition of the present invention is excellent in storage stability, can be applied to a high film thickness with high solubility in general solvents, and can be developed with an alkali, and a cured product with high resolution can be obtained. It is suitable for surface protection films, interlayer insulation films, and insulation films for high-density mounting substrates.
  • FIG. 1 is a schematic cross-sectional view of a semiconductor element having an insulating resin layer formed using the photosensitive resin composition of the present invention.
  • FIG. 2 is a schematic cross-sectional view of a semiconductor element having an insulating resin layer formed using the photosensitive resin composition of the present invention.
  • One embodiment of the photosensitive resin composition of the present invention includes (A) a polyimide resin, (B) a photoacid generator, (C) a crosslinking agent having an alkoxyalkylated amino group, and (D) It contains a compound represented by the following general formula (1). The details will be described below.
  • the polyimide resin is not particularly limited as long as it is a polymer (resin) containing a polyimide skeleton in its molecular structure, but is preferably an alkali-soluble resin.
  • Specific examples of the (A) polyimide resin include those containing a repeating unit represented by the general formula (2).
  • X in the general formula (2) is a tetravalent aromatic hydrocarbon group or a tetravalent aromatic group.
  • An aliphatic hydrocarbon group preferably a tetravalent aliphatic hydrocarbon group.
  • Specific examples of the tetravalent aromatic hydrocarbon group include a tetravalent group in which four hydrogen atoms in the aromatic hydrocarbon mother skeleton are replaced.
  • aromatic hydrocarbon group examples include the following groups.
  • Examples of the tetravalent aliphatic hydrocarbon group include a chain hydrocarbon group, an alicyclic hydrocarbon group, and an alkyl alicyclic hydrocarbon group. More specifically, it is possible to cite a tetravalent group in which four hydrogens in the base skeleton of a chain hydrocarbon group, an alicyclic hydrocarbon, or an alkyl alicyclic hydrocarbon are substituted. These tetravalent aliphatic hydrocarbon groups may include an aromatic ring in at least a part of the structure.
  • chain hydrocarbons examples include ethane, n-pronone, n-pentane, n-pentane, n-hexane, n-year-old kutan, n-decane, and n-dodecane.
  • specific examples of alicyclic hydrocarbons include the ability S to include monocyclic hydrocarbon groups, bicyclic hydrocarbon groups, tricyclic or higher hydrocarbons, and the like.
  • Examples of the monocyclic hydrocarbon include cyclopropane, cyclobutane, cyclopentane, cyclopentene, cyclohexane, cyclohexene, and cyclooctane.
  • Bicyclic hydrocarbons include bicyclo [2.2.1] heptane, bicyclo [3.1.1] heptane, Examples include [3.1.1] hepto-2en, bicyclo [2 ⁇ 2.2] octane, bicyclo [2 ⁇ 2.2] oct 7-en.
  • Tricyclic or higher hydrocarbons include tricyclo
  • alkyl alicyclic hydrocarbon examples include those obtained by substituting the alicyclic hydrocarbon with an alkyl group such as a methyl group, an ethyl group, a propyl group, or a butyl group. More specifically, methylcyclopentane, 3-ethyl-1-methyl-1-cyclohexene, 3-ethyl-1-cyclohexene and the like can be mentioned.
  • a tetravalent aliphatic hydrocarbon group containing an aromatic ring in at least a part of its structure the number of aromatic rings contained in one molecule is 3 or less. Particularly preferred is one. More specifically, 1-ethyl-6-methyl-1,2,3,4-tetrahydronaphthalene, 1-ethyl-1,2,3,4 tetrahydronaphthalene and the like can be mentioned.
  • a in the general formula (2) is a divalent group having a hydroxyl group.
  • Preferred examples of the divalent group having a hydroxyl group include the group represented by the general formula (3).
  • R 5 in the general formula (3) is a single bond, oxygen atom, sulfur atom, sulfone group, carboninole group, methylene group, dimethylmethylene group, bis (trifluoromethyl) methylene group, and 9, 9 At least one group selected from the group consisting of fluorenylene groups.
  • R 6 s independently represent a hydrogen atom, an acyl group or an alkyl group.
  • acyl group examples include a formyl group, a acetyl group, a propionyl group, a butyroyl group, and an isobutyroyl group.
  • Preferred alkyl groups include, for example, a methyl group, an ethyl group, an npropyl group, an isopropyl group, an n A butyl group, n pentyl group, n hexyl group, n octyl group, n decyl group, n dodecyl group and the like can be mentioned.
  • at least one of R 6 is a hydrogen atom.
  • n 1 and n 2 are integers of 0 to 4, and at least one of n 1 and n 2 is 1 or more.
  • a divalent group having three hydroxyl groups such as
  • C hydroxyl groups can be the mentioned divalent group of four chromatic etc.
  • divalent groups having two hydroxyl groups are preferred.
  • the polyimide resin is usually a monomer represented by the following general formula (4) (hereinafter also referred to as "monomer (4)"! /), And a monomer represented by the following general formula (5) ( Hereinafter, “monomer (5)” can be obtained by reacting! /,) In a polymerization solvent to synthesize a polyamic acid, and further carrying out an imidization reaction.
  • the procedure for synthesizing the polyamic acid is a general method of dissolving the monomer (5) in a polymerization solvent and then reacting the monomer (4).
  • a diamine compound other than the monomer (5) can be reacted as necessary.
  • diamine compounds that can be reacted include p-phenylenediamine, m-phenylenediamine, 4, 4, -diaminodiphenyl.
  • 4,4'-diaminodiphenylethane 4,4'-diaminodiphenylsulfide, 4 , 4'-diaminodiphenylsulfone, 3, 3, monodimethyl-4,4'-diaminobiphenyl, 4,4'-diaminobenzanilide, bis (4-aminophenyl) ether, 1,5-diaminonaphth Thalene, 2, 2 'dimethyl-4,4'-diaminobiphenyl, 5 amino-11 (4'-aminophenyl) 1,3,3-trimethylindane, 6-amino 1- (4, aminophenol ) 1,3,3-trimethylindane, 3,4'-diaminodiphenyl ether, 3,3'-diaminobenzophenone, 3,4'-diaminobenzophenone, 4,4'-diaminobenzophenone, 2, 2 screw
  • the (A) polyimide resin contained in the photosensitive resin composition of the present invention has the following general formula:
  • It may contain a repeating unit represented by (6).
  • a repeating unit having a structure represented by the following general formula (1) By containing a repeating unit having a structure represented by the following general formula (1), a stress-reducing function can be imparted to a cured product obtained using this photosensitive resin composition.
  • X represents a tetravalent aromatic or aliphatic hydrocarbon group
  • B represents a substituted or unsubstituted alkylene group having 2 to 20 carbon atoms, and is represented by the following general formula (7)
  • n d represents an integer of 0 to 30
  • Z represents a substituted or unsubstituted alkylene group having 2 to 20 carbon atoms
  • X in the general formula (6) is a tetravalent aromatic or aliphatic hydrocarbon group, and the above-described tetravalent aromatic or aliphatic hydrocarbon group can be used.
  • B in the general formula (6) is a substituted or unsubstituted alkylene group having 2 to 20 carbon atoms, a divalent group represented by the general formula (7), or 2 represented by the general formula (8). Is a valent group.
  • the substituted or unsubstituted alkylene group having 2 to 20 carbon atoms is preferably an alkylene group having 4 or more carbon atoms.
  • alkylene group having 4 or more carbon atoms examples include alkylene groups having 4 carbon atoms such as 1,4-butylene group; alkylene groups having 5 carbon atoms such as 1,5-pentylene group; 2-methyl- Examples thereof include alkylene groups having 6 carbon atoms such as 1,5 pentylene group and 1,6 hexylene group; alkylene groups having 7 to 20 carbon atoms such as 1,10 decylene group and 1,12 dodecylene group.
  • an alkylene group having 7 to 20 carbon atoms which is preferable to an alkylene group having 6 or more carbon atoms, is more preferable because of its improved solubility in a solvent.
  • n 3 in the general formula (7) is an integer of 0 to 30. . n 3 is preferably an integer from 1 to 20; an integer from! to 15 is particularly preferred.
  • B in the general formula (6) is a divalent group represented by the general formula (8)
  • Z in the general formula (8) is substituted or non-substituted having 2 to 20 carbon atoms.
  • a substituted alkylene group Specifically, the substituted or unsubstituted alkylene group having 2 to 20 carbon atoms is preferably an alkylene group having 3 or more carbon atoms.
  • alkylene group having 3 or more carbon atoms examples include alkylene groups having 3 to 5 carbon atoms such as 1,3-propylene group, 2,2 dimethylpropylene group, 1,4-butylene group, 1,5 pentylene group; 2 Examples thereof include alkylene groups having 6 carbon atoms such as methyl 1,5 pentylene group and 1,6 hexylene group; alkylene groups having 7 to 20 carbon atoms such as 1,10 decylene group and 1,12 dodecylene group.
  • the divalent group represented by the general formula (8) is preferably
  • the compound giving a substituted or unsubstituted alkylene group having 2 to 20 carbon atoms as B in the general formula (6) 1, 4-butylene diamine, 1, 5 pentylene diamine, Examples include 2 methylol 1,5-pentylene diamine, 1,6 hexylene diamine, 1,10 decylene diamine, 1,12 dodecylene diamine, and the like.
  • an alkylene group having 7 to 20 carbon atoms is more preferable, and an alkylene group having 6 or more carbon atoms is more preferable because of its improved solubility in a solvent.
  • Examples of the compound giving a divalent group represented by the general formula (7) include a monomer represented by the following general formula (9) (hereinafter, also referred to as "monomer (9)"! /) That power S.
  • n 3 represents an integer of 0 to 30
  • Examples of the compound giving a divalent group represented by the general formula (8) include a monomer represented by the following general formula (10).
  • Z represents a substituted or unsubstituted alkylene group having 2 to 20 carbon atoms.
  • Examples of the monomer represented by the general formula (10) include
  • the (A) polyimide resin contained in the photosensitive resin composition of the present invention contains a repeating unit represented by the general formula (6), the general formula (4) ) And a monomer represented by the following general formula (11) (hereinafter also referred to as “monomer (11)”) in a polymerization solvent to synthesize a polyamic acid, and further carry out an imidization reaction.
  • Power S can be obtained by
  • the procedure for synthesizing the polyamic acid includes a general method in which the monomer (11) is dissolved in the polymerization solvent and then the monomer (4) is reacted, or the monomer (4) is dissolved in the polymerization solvent and then the monomer (1 The method of reacting 1) can be mentioned.
  • the polyimide resin includes a repeating unit represented by the general formula (2) and the general formula (
  • the (A) polyimide resin contained in the photosensitive resin composition of the present invention contains a repeating unit represented by the general formula (2) and a repeating unit represented by the general formula (6).
  • this (A) polyimide resin is usually prepared by reacting monomer (4), monomer (5), and monomer (11) in a polymerization solvent to synthesize polyamic acid, followed by imidization reaction. You can gain the power by doing it.
  • the procedure for synthesizing the polyamic acid consists of monomer (5) and monomer (1 I) is dissolved in the polymerization solvent and then the monomer (4) is reacted, or the monomer (4) is dissolved in the polymerization solvent and then the monomer (5) is reacted, and then the monomer is further reacted.
  • a method of reacting I) can be mentioned.
  • Polystyrene resin weight average molecular weight (hereinafter also referred to as "Mw") measured by gel permeation chromatography (GPC) of the polyimide resin is usually about 2,000-500,000. Yes, preferably about 3,000-250,000.
  • Mw weight average molecular weight measured by gel permeation chromatography
  • the ratio of the monomer (5) to the sum of the monomers (5) and the monomer (5) other than Jiamin compound is usually 1 to 99 mol 0/0, preferably at from 20 to 95 mole 0/0 There, more preferably from 30 to 90 mole 0/0.
  • the polymerization solvent usually, N, N-dimethylformamide, N, N-dimethyl ⁇ Seto Ami de, N-methyl-2-pyrrolidone, I Buchirorataton, non pro tons of solvents such as dimethyl sulfoxide; Metatarezoru such protic solvents Is used.
  • Alcohol solvents; ether solvents such as diglyme and triglyme; aromatic hydrocarbon solvents such as toluene and xylene may be added!
  • Heat imidization reaction and chemical imidation reaction are generally known as imidization reaction.
  • (I) It is preferable to synthesize a polyimide resin by heat imidization reaction.
  • the heating imidization reaction is usually carried out by heating a synthesis solution of polyamic acid at 120 to 210 ° C .;! To 16 hours. If necessary, water in the system is removed using an azeotropic solvent such as toluene or xylene. The reaction may be performed while
  • “/ (A) polyimide resin” conceptually includes a “polyimide precursor” that finally becomes (A) a polyimide resin by heat treatment after exposure and development. That is, the photosensitive resin composition of the present invention may contain a polyimide precursor instead of (A) the polyimide resin or together with (A) the polyimide resin.
  • the polyimide precursor include the above-described polyamic acid obtained by reacting the monomer (4) and the monomer (5), a compound obtained by esterifying the power of polyamic acid and rubonic acid.
  • a compound obtained by esterifying a carboxylic acid of a polyamic acid can be obtained by converting, for example, a half ester obtained by reacting a monomer (4) with an alcohol into (i) an acid chloride with thionyl chloride and the like. 5) Reaction is performed, or (ii) conversion into an active ester compound with bis (1H-benzotriazolyl) carbonate or the like and further reaction with the monomer (5).
  • This polyamide precursor can be imidized by heat treatment after exposure and development to obtain (A) a polyimide resin in situ.
  • (A) Polystyrene resin weight average molecular weight (hereinafter also referred to as "Mw") measured by gel permeation chromatography (GPC) is usually about 2,000-500,000. Yes, the preferred ⁇ is about 3,000-250,000. When the Mw force is 000 or less, sufficient mechanical properties as an insulating film tend not to be obtained. On the other hand, when the Mw is 500,000 or more, the photosensitive resin composition obtained by using this (A) polyimide resin tends to have poor solubility in a solvent or a developer.
  • Mw Polystyrene resin weight average molecular weight measured by gel permeation chromatography
  • ( ⁇ ′) resin other resins other than the above-mentioned (A) polyimide resin (hereinafter referred to as “( ⁇ ′) resin”) may be used as long as the effects of the present invention are not impaired. Can be further added.
  • the type of ( ⁇ ′) resin that can be contained is not particularly limited, but is preferably alkali-soluble, and further contains an alkali-soluble resin having a phenolic hydroxyl group (hereinafter also referred to as “phenol resin”). It is more preferable because the resolution becomes good.
  • Examples of the resin having a phenolic hydroxyl group that can be contained include nopolac resin, polyhydroxystyrene and a copolymer thereof, and phenol-xylylene glycol dimethyl.
  • Examples thereof include an ether condensation resin, a creso-l-xylylene glycol dimethyl ether condensation resin, and a phenol-dicyclopentaene condensation resin.
  • nopolac resins include phenol / formaldehyde condensed nopolac resins, talesol / formaldehyde condensed nopolac resins, phenol-naphthol / formaldehyde condensed nopolac resins, and the like.
  • the nopolac resin can be obtained by condensing phenols and aldehydes in the presence of a catalyst.
  • phenols used in this case include phenol, o crezo monore, m crezo monore, p crezo monore, o echino refenonore, m- echenore enoenore, p echino leenore, o Butinolephenol, m Butinoleenole, p-Butylphenol, 2, 3 Xylenol, 2,4 Xylenol, 2,5 Xylenol, 2, 6 Xylenol, 3, 4 Xylenol, 3, 5 , 5 trimethenourenore, 3,4,5-trimethylphenol, force teconore, resorcinol, pyrogallol, ⁇ -naphthol, / 3-naphthol and the like.
  • Monomers other than hydroxystyrene constituting the copolymer of polyhydroxystyrene are not particularly limited. Specifically, styrene, indene, ⁇ methoxystyrene, p-n-butoxystyrene, p-tert-butoxy Styrene derivatives such as styrene, p-acetoxystyrene, and p-hydroxy-a-methylstyrene; (meth) acrylic acid, methyl (meth) ate acrylate, ethyl (meth) acrylate, n propyl (meth) acrylate, isopropyl ( (Meth) acrylate, n-butyl (meth) acrylate, sec butyl (meth) acrylate, (meth) acrylic acid derivatives such as butyl (meth) acrylate; methyl butyl ether, ethyl vinyl etherate, n butinorevinin
  • the content of the resin having a phenolic hydroxyl group is preferably 0 to 90% by mass with respect to 100% by mass of the total of (A) the polyimide resin and the resin having a phenolic hydroxyl group, and 5 to 80% by mass. It is particularly preferable to set the content to 10 to 70% by mass.
  • the photosensitive resin composition of the present invention includes the above-mentioned resin having a phenolic hydroxyl group.
  • a phenolic low molecular weight compound can be contained.
  • Specific examples of phenolic low molecular weight compounds that can be contained include 4,4'-dihydroxydiphenyl methane, 4,4'-dihydroxydiphenyl ether, tris (4-hydroxyphenol) methane, 1,1- Bis (4-hydroxyphenyl) -1-1-phenylethane, Tris (4-hydroxyphenyl) ethane, 1,3-bis [1- (4-hydroxyphenyl) 1-methylethynole] benzene, 1,4-bis [1- (4-Hydroxyphenyl) mono 1-methylethynole] benzene, 4, 6-bis [14-hydroxyphenyl) 1 methylethyl] 1,3-dihydroxybenzene, 1,1-bis (4-hydroxy 1) 1- [4— ⁇ 1- (4-4)
  • the content ratio of the phenolic low molecular weight compound is (A) 100 parts by mass of a polyimide resin (provided that ( ⁇ ') resin is further contained, the sum of ( ⁇ ) polyimide resin and ( ⁇ ') resin) 100 to 100 parts by mass is preferable with respect to 100 parts by mass), more preferably 5 to 40 parts by mass, and even more preferably 5 to 40 parts by mass.
  • the photoacid generator (i) contained in the photosensitive resin composition of the present invention is a compound that generates an acid upon irradiation with radiation (hereinafter also referred to as “exposure”).
  • Photoacid generators having such properties include chemical amplification of ododonium salt compounds, sulfonium salt compounds, sulfone compounds, sulfonic acid ester compounds, halogen-containing compounds, sulfonimide compounds, diazomethane compounds, etc.
  • Photoacid generators based on naphthoquinonediazide (NQD) such as diazoketone compounds.
  • Examples of the iodine salt compound include diphenyl trifluoromethane sulfonate, diphenyl benzoyl benzoate, diphen nitro sulfonate sulfonate Honate, diphenenoredo de nore benzene sulphonate, diphene enore hexahexafluoroantimonate, bis (4 t butylphenol) odon tritrifluoromethanesulfonate, bis (4 t butylphenol) ) Iodonium nonafluorobutane sulfonate, bis (4t butylphenol) oddonum camphor sulfonate, bis (4t butylphenyl) odonium p toluenesulfonate, etc.
  • sulfonium salt compounds include triphenylsulfonium trifluoromethanesulfonate, triphenylenosnorephonium nonafnorebutansnorephonate, and triphenylenoresnorephonium mumphfer. Sulfonate, triphenylsulfonium naphthalenesulfonate, 4-hydroxyphenyl.benzyl.methylsulfonium p-toluenesulfonate, 4- (phenylphenol) phenyl'diphenylsulfonium hexafluorophosphate, 4, 7 —G
  • sulfone compound examples include ⁇ -ketosulfone, ⁇ sulfonylsulfone, and a-diazo compounds thereof. More specifically, mention may be made of phenacylphenylsulfone, mesitylphenacylsulfone, bis (phenylsulfoninole) methane, 4-trisphenacylsulfone, and the like.
  • Examples of the sulfonate compound include alkyl sulfonate, haloalkyl sulfonate, aryl sulfonate, imino sulfonate, and the like. More specifically, benzoin tosylate, pyrogallol tristrifluormethane sulfonate, pyrogallol methanesulfonic acid triester, nitrobenzil 9,10 diethoxyanthracene 2-sulfonate, ⁇ -methylol benzoin tosylate, ⁇ — Examples include methylophone and a-methylolbenzoindodecyl sulfonate.
  • halogen-containing compound examples include haloalkyl group-containing hydrocarbon compounds, haloalkyl group-containing heterocyclic compounds, and the like.
  • halogen-containing compounds include 1, 1-bis (4 chlorophenenole) -1, 2, 2, 2 trichloroethane, phenenole bis (trichloromethyl) s triazine, 4- Methoxyphenyl monobis (trichloromethyl) —s triazine, styryl monobis (trichloromethyl) s triazine, 4-methoxystyryl monobis (trichloromethyl) s triazine, naphthyl monobis (trichloromethyl) s Lyazine and s-triazine derivatives represented by the following general formula (12).
  • R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or an alkoxyl group having! To 4 carbon atoms, Y represents a halogen atom, Q represents an oxygen atom, Or a sulfur atom is shown.
  • the s-triazine derivative represented by the general formula (12) has wide absorption in the g-line, h-line, and i-line regions, and is a general radiation-sensitive acid having another triazine skeleton. As a result, it is possible to obtain an insulating cured product having higher acid generation efficiency and higher residual film ratio than the generator.
  • the alkyl group having 1 to 4 carbon atoms represented by R includes methyl group, ethyl group, n propyl group, isopropyl group, n butyl group, iso butyl group, A sec butyl group, a tert butyl group, etc. can be mentioned.
  • alkoxyl group having 1 to 4 carbon atoms examples include methoxy group, ethoxy group, propoxy group, isopropoxy group, n-butoxy group, iso-butoxy group, sec-butoxy group and the like.
  • R in the general formula (12) is more preferably a hydrogen atom, a methyl group or an ethyl group, preferably a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
  • the halogen atom represented by Y is preferably a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom. S is preferable, and a chlorine atom is more preferable. Furthermore, Q in the general formula (12) is more preferably an oxygen atom.
  • S-triazine derivatives may be used alone or in combination of two or more. And force S.
  • sulfonimide compounds include N— (trifluoromethylsulfonyloxy) succinimide, N (trifluoromethylsulfonyloxy) phthalimide, N (trifluoromethylsulfonyloxy) diphenylmaleimide, N (Trifluoromethylsulfonyloxy) Bicyclo [2.2.1] hept-5ene 2,3 dicarboximide, N- (trifluoromethylsulfonyloxy) naphthylimide and the like.
  • Diazomethane compounds include bis (trifluoromethylsulfonyl) diazomethane and bis
  • diazo ketone compound examples include 1,3-diketo 2-diazo compound, diazobenzoquinone compound, diazonaphthoquinone compound and the like.
  • Specific examples of preferred diazoketone compounds include 1,2-naphthoquinone diazide 4 sulfonate compounds of phenols.
  • sulfonium salt compounds sulfone compounds, halogen-containing compounds, diazoketone compounds, sulfonimide compounds, and diazomethane compounds are preferred. Sulfonium salt compounds and halogen-containing compounds are more preferred. .
  • These (B) photoacid generators can be used singly or in combination of two or more.
  • the content ratio of (B) photoacid generator is (A) 100 parts by mass of polyimide resin (provided that ( ⁇ ') resin is further contained, ( ⁇ ) polyimide resin and ( ⁇ ') resin) To 100 parts by mass) is usually from 0 .;! To 20 parts by mass, preferably from 0.5 to 10 parts by mass. Less than 1 part by mass In some cases, it may be difficult to cause sufficient chemical changes due to the catalytic action of the acid generated by exposure. On the other hand, if it exceeds 20 parts by mass, there is a risk of uneven coating when the photosensitive resin composition is applied, or the insulation after curing may be reduced.
  • the crosslinking agent is a compound that forms a bond with a compounded composition such as a resin or other crosslinking agent molecules by the action of heat or acid.
  • a compounded composition such as a resin or other crosslinking agent molecules by the action of heat or acid.
  • Specific examples of the (C) crosslinking agent include polyfunctional (meth) acrylate compounds, epoxy compounds, hydroxymethyl group-substituted phenol compounds, and compounds having an alkoxyalkylated amino group. Of these, compounds having an alkoxyalkylated amino group are preferred.
  • these (C) crosslinking agents can be used individually by 1 type or in combination of 2 or more types.
  • Examples of the polyfunctional (meth) atalylate compound include trimethylolpropane tri (meth) atrelate, ditrimethylolpropane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (meth).
  • Examples of the epoxy compound include nopolac type epoxy resin, bisphenol type epoxy resin, alicyclic epoxy resin, aliphatic epoxy resin and the like.
  • Hydroxymethyl group-substituted phenolic compounds include 2 hydroxymethyl-4,6 dimethylphenol, 1,3,5-trihydroxymethylbenzene, 3,5-dihydroxymethyl 4-methoxytoluene [2,6 bis ( Hydroxymethyl) p cresol].
  • Compounds having an alkoxyalkylated amino group include (poly) methylolation A nitrogen-containing compound having a plurality of active methylol groups in one molecule, such as melamine, (poly) methylol glycoluril, (poly) methylol benzoguanamine, (poly) methylol urea, and the like Examples include a compound in which at least one hydrogen atom of the hydroxyl group of the group is substituted with an alkyl group such as a methyl group or a butyl group.
  • the compound having an alkoxyalkylated amino group may be a mixture in which a plurality of substituted compounds are mixed, and some of them contain an oligomer component that is partially self-condensed. Power S can be.
  • More specific examples of the compound having an alkoxyalkylated amino group include compounds represented by the following formulas (13) to (19).
  • the compound represented by the formula (13) (hexamethoxymethylmelamine) is commercially available under the trade name “Symel 300” (manufactured by Cytec Industries). Further, the compound represented by the formula (15) (tetrabutoxymethyldaryl alcohol) is commercially available under the trade name “Cymel 1170” (manufactured by Cytec Industries).
  • Examples of the compound having an alkoxyalkylated amino group include hexamethoxymethyl melamine (formula (13)), tetramethoxymethyl darryluril (formula (16)), tetrabutoxymethyl dallicol. Ryl (formula (15)) is particularly preferred, and hexamethoxymethylmelamine (formula (13)) is most preferred! /.
  • the content of the crosslinking agent is such that the film formed by the photosensitive resin composition is sufficiently cured.
  • the amount is appropriately set so as to be an amount to be adjusted.
  • the content ratio of (C) crosslinking agent is (A) 100 parts by mass of a polyimide resin (provided that ( ⁇ ′) resin is further contained, ( ⁇ ) polyimide resin and ( ⁇ ′) It is usually 5 to 50 parts by mass, preferably 10 to 40 parts by mass with respect to 100 parts by mass of the resin). If it is less than 5 parts by mass, the resulting insulating layer may have insufficient solvent resistance and plating solution resistance. On the other hand, if it exceeds 50 parts by mass, the developability of the thin film formed by the photosensitive resin composition may be insufficient.
  • R 1 in the general formula (1) is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, preferably a hydrogen atom or a methyl group, and more preferably a hydrogen atom.
  • R 2 in the general formula (1), And R 4 are each independently an alkyl group having 1 to 5 carbon atoms, preferably an alkyl group having 1 to 3 carbon atoms.
  • Preferred examples of the compound include orthoformate esters such as trimethyl orthoformate, triethyl orthoformate, and tripropyl orthoformate.
  • the photosensitive resin composition of the present invention contains the compound (D), the viscosity of the photosensitive resin composition is difficult to change. Therefore, the photosensitive resin composition of the present invention is stable and easy to use even after being stored for a long period of time, and is excellent in storage stability.
  • the content ratio of the compound (D) is 100 parts by mass of (A) polyimide resin (provided that ( ⁇ ') resin is further contained, the total of ( ⁇ ) polyimide resin and ( ⁇ ') resin is 100) To 100 parts by mass, preferably 0.1 to 100 parts by mass, more preferably 0.5 to 10 parts by mass, and still more preferably 0.5 to 10 parts by mass.
  • amount is less than 1 part by mass, the viscosity of the photosensitive resin composition tends to change. On the other hand, if it exceeds 100 parts by mass, the applicability tends to deteriorate.
  • the organic resin in order to improve the handleability and to adjust the viscosity and storage stability, the organic resin is used as necessary within a range not impairing the effects of the present invention.
  • the solvent can be contained.
  • the type of solvent that can be contained is not particularly limited, but for example, aprotic such as ⁇ , ⁇ -dimethylformamide, ⁇ , ⁇ -dimethylacetamide, ⁇ -methyl-2-pyrrolidone, ⁇ -butyrolataton, dimethyl sulfoxide, etc.
  • Solvent A phenolic protic solvent such as metataresole is preferably used.
  • propylene glycol monoalkyl ethers propylene glycol dialkyl ethers, propylene glycol monoalkyl ether acetates instead of or together with the above solvents.
  • Organic solvents such as alcohols, aliphatic alcohols, lactic acid esters, aliphatic carboxylic acid esters, alkoxy aliphatic sulfonic acid esters, and ketones.
  • propylene glycol monoalkyl ethers examples include propylene glycol monomethylenoate, propylene glycol monomethenoate ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether and the like.
  • propylene glycol dialkyl ethers examples include propylene glycol jet nole etherate, propylene glycol nole propenolate nole, propylene glycol nole di ether ether and the like.
  • propylene glycol monoalkyl ether acetates examples include propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropino oleate acetate, propylene glycol mono butyl ether acetate and the like.
  • aliphatic alcohols include 1-butanol, 2-butanol, 1-pentanol mononole, 2-pentanol mononole, 4-methyl-2-pentanol, 1-hexanol and the like.
  • Examples of the lactic acid esters include methyl lactate, ethyl acetate, n-propyl lactate, and isopropyl lactate pills.
  • Examples of aliphatic carboxylic acid esters include n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, n-amyl acetate, isoamyl acetate, isopropyl propionate, n-butyl propionate, isobutyl propionate, etc. I'll do it.
  • alkoxy aliphatic carboxylic acid esters examples include methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, and ethyl 3-ethoxypropionate.
  • ketones include 2-heptanone, 3-heptanone, 4-heptanone, cyclopentanone, cyclohexanone, and the like.
  • solvents ethyl lactate, 2-heptanone, cyclohexanone, propylene glycol Monoethyl methinoreateolate, propyleneglycolole methinoreteate acetate, butyl acetate is preferred, and propylene glycol monomethyl ether is particularly preferred.
  • solvents can be used alone or in combination of two or more. The solvent is usually used so that the total content of components other than the solvent is !!-60 mass%.
  • the photosensitive resin composition of the present invention may contain other additives such as a basic compound, an adhesion aid, and a surfactant as necessary, as long as the effects of the present invention are not impaired. Touch with S.
  • Examples of the basic compound include triethylamine, tree n-propylamine, tree n-butylamine, tree n-pentylamine, tree n-hexylamine, tree n-heptylamine, tree n-year-old cutinoleamine, tree n-noninoleamine, tree Examples thereof include trialkylamines such as n-decinoleamine, tri-n-dodecylamine, and n-dodecyldimethylamine, and nitrogen-containing heterocyclic compounds such as pyridine, pyridazine and imidazole.
  • the content of the basic compound is usually 5 parts by mass or less, preferably 3 parts by mass or less with respect to 100 parts by mass of the (A) polyimide resin. If the content of the basic compound is more than 5 parts by mass with respect to 100 parts by mass of the (A) polyimide resin, the photoacid generator may not function sufficiently.
  • the photosensitive resin composition of the present invention may contain an adhesion assistant in order to improve adhesion to the substrate.
  • a functional silane coupling agent is effective as the adhesion assistant.
  • the functional silane coupling agent refers to a silane coupling agent having a reactive substituent such as a carbonyl group, a methacryloyl group, an isocyanate group, or an epoxy group. Specific examples include trimethoxysilylbenzoic acid, ⁇ -methacryloxypropyltrimethoxylane, vinyltriacetoxysilane , butyltrimethoxysilane , ⁇ -isocyanatopropyltriethoxyhexyl) ethyltrimethoxysilane and the like. be able to.
  • the content of the adhesion assistant is preferably 10 parts by mass or less with respect to 100 parts by mass of (ii) polyimide resin. [0129] (Surfactant)
  • the photosensitive resin composition of the present invention may contain a surfactant for the purpose of improving various properties such as coating properties, defoaming properties, and leveling properties.
  • Surfactants include, for example, BM-1000, BM-1100 (above, manufactured by BM Chemi Co., Ltd.), MegaFuck F142D, F172, F173, F183 (above, manufactured by Dainippon Ink & Chemicals, Inc.), Florard FC-135, FC-170C, FC-430, FC-431 (Sumitomo 3EM), Surflon S-112, S-113, S-131, S-141, S- 145 (above, manufactured by Asahi Glass Co., Ltd.), SH-28PA, i-190, ibid-193, SZ-6032, SF-8428 (above, made by Toray Dow Cowing Silicone), etc.
  • Surfactants can be used.
  • the content of the surfactant is preferably 5 parts by mass or less with respect to 100 parts by mass of the
  • the photosensitive resin composition according to an embodiment of the present invention can be suitably used particularly as a surface protective film or an interlayer insulating film material of a semiconductor element.
  • the photosensitive resin composition of the embodiment of the present invention is applied to a support (a copper foil with resin, a copper wafer with a copper clad laminate, a silicon wafer with a metal sputtered film, an alumina substrate, etc.) and dried to remove a solvent or the like Volatilizes to form a coating film.
  • exposure is performed through a desired mask pattern, and heat treatment (hereinafter, this heat treatment is referred to as “PEB”) is performed to promote the reaction between the phenol ring and the crosslinking agent.
  • PEB heat treatment
  • development with an alkaline developer can dissolve and remove the unexposed areas, thereby obtaining a desired pattern.
  • a hard film can be obtained by performing a heat treatment in order to develop the insulating film characteristics.
  • a coating method such as a dubbing method, a spray method, a bar coating method, a roll coating method, or a spin coating method can be used.
  • the coating thickness can be appropriately controlled by adjusting the coating means and the solid content concentration and viscosity of the composition solution.
  • a pre-beta treatment is usually performed to evaporate the solvent.
  • the conditions vary depending on the composition of the photosensitive resin composition, the film thickness used, etc. Usually 70 to 150 ° C, preferably 80 to 140 ° C, and about 1 to 60 minutes.
  • Examples of radiation used for exposure include low-pressure mercury lamp, high-pressure mercury lamp, and metal harassment.
  • Examples thereof include ultraviolet rays such as id lamp, g-line and i-line, electron beam, and laser beam.
  • Exposure light amount is suitably selected according to the light source and the resin film thickness and the like to be used, for example, when irradiated with ultraviolet rays from a high pressure mercury lamp, the resin thickness of 10 to 50 111, typically at about 100 ⁇ 5000mJ / cm 2 is there.
  • PEB is performed to promote the curing reaction between the phenol ring and the (C) crosslinking agent by the generated acid.
  • PEB conditions vary depending on the composition of the photosensitive resin composition and the film thickness used, etc. Usually 70 to 150 ° C, preferably 80 to 140 ° C, and! To 60 minutes.
  • development is performed with an alkaline developer, and a desired pattern is formed by dissolving and removing unexposed portions. Examples of the developing method in this case include a shower developing method, a spray developing method, an immersion developing method, and a paddle developing method.
  • the development conditions are usually 20 to 40 ° C;! To 10 minutes.
  • Examples of the alkaline developer include alkaline compounds such as sodium hydroxide, potassium hydroxide, ammonia water, tetramethylammonium hydroxide, choline, and the like; Examples thereof include an alkaline aqueous solution dissolved in water. An appropriate amount of a water-soluble organic solvent such as methanol or ethanol, a surfactant, or the like can be added to the alkaline aqueous solution. After developing with an alkaline developer, wash with water and dry.
  • alkaline compounds such as sodium hydroxide, potassium hydroxide, ammonia water, tetramethylammonium hydroxide, choline, and the like
  • Examples thereof include an alkaline aqueous solution dissolved in water.
  • An appropriate amount of a water-soluble organic solvent such as methanol or ethanol, a surfactant, or the like can be added to the alkaline aqueous solution.
  • the film can be sufficiently cured by heat treatment.
  • the photosensitive resin composition is cured by heating at a temperature of 100 to 400 ° C for about 30 minutes to 10 hours. be able to.
  • heating can be performed in multiple stages in order to sufficiently advance the curing or to prevent deformation of the obtained pattern shape. For example, when performing in two stages, the first stage is heated at a temperature of 50 to 200 ° C. for about 5 minutes to 2 hours, and further in the second stage at a temperature of 100 to 400 ° C. for 10 minutes to Heat for about 10 hours to harden.
  • a hot plate, oven, infrared furnace, microwave oven, or the like can be used as the heating equipment.
  • a semiconductor element using the photosensitive resin composition of the embodiment of the present invention is illustrated. This will be explained by the surface. As shown in FIG. 1, a patterned insulating film 3 is formed on a substrate 1 on which a patterned metal pad 2 is formed using the photosensitive resin composition of the present embodiment. Next, if the metal wiring 4 is formed so as to be connected to the metal pad 2, the semiconductor element can be obtained with the force S.
  • a patterned insulating film 5 may be formed on the metal wiring 4 by using the photosensitive resin composition of the present embodiment.
  • the photosensitive resin composition which is this embodiment is used, the semiconductor element which has the insulating resin layer formed of this photosensitive resin composition can be obtained.
  • a photosensitive resin composition was spin-coated on a 6-inch silicon wafer and heated on a hot plate at 110 ° C. for 3 minutes to prepare a uniform coating film having a thickness of 20 ⁇ .
  • a coating film with defects such as cracks was evaluated as “bad”, and a crack without defects such as cracks was determined as “good”.
  • a silicon wafer on which a coating film was formed was obtained by the same procedure as in the applicability evaluation test.
  • the obtained silicon wafer was exposed using an aligner (MA-150 manufactured by Suss Microtec).
  • the exposure was performed by irradiating ultraviolet rays from a high-pressure mercury lamp through a pattern mask.
  • the ultraviolet rays were irradiated so that the exposure amount at a wavelength of 350 nm was 1000 to 5000 mj / cm 2 .
  • Polymers (A-2) and (A-3) were obtained in the same manner as in Synthesis Example 1 except that the respective monomers and NMP were blended according to the blending recipe shown in Table 1.
  • Table 1 shows the yield (g) and molecular weight Mw of the obtained polymer. Moreover, it was confirmed by IR analysis that any of the obtained polymers had absorption of YScn 1 indicating imide.
  • the structures of the monomers used in Synthesis Examples;! To 3 are shown below. [0147] [Chemical 26]
  • m-Talesol and p-Talesol were mixed at a molar ratio of 60:40, and formalin was added thereto, followed by condensation by a conventional method using a oxalic acid catalyst, and a weight average molecular weight (Mw) of 8 700. Cresol nopolac resin (Pl) was obtained. The OH equivalent of this resin was 122 g / eq.
  • a photosensitive resin composition (Example 1) was obtained by mixing 220 parts of ethyl lactate (EU), and the evaluation of the mixing property of the obtained photosensitive resin composition was “good”. The evaluation of “good” and the patterning property was “good.” The change with time in viscosity was 0%.
  • a photosensitive resin composition (Examples 2 to 6 and Comparative Examples 1 to 3) was obtained in the same manner as in Example 1 except that the formulation shown in Table 2 was used.
  • Table 3 shows the evaluation results of the mixing property, coating property, and patterning property of the obtained photosensitive resin composition, and the change with time of the viscosity. The meanings of the abbreviations in Table 2 are as shown below.
  • C-1 Hexamethoxymethylmelamine (Cytech Industries, trade name: Saimenole 300)
  • C-2 Tetramethoxymethyl dalcoluril (Cytech Industries, trade name: Saimenole: 1174)
  • PGMEA Propylene glycol monoethyl ether acetate
  • the photosensitive resin composition of the present invention is suitable for use as a surface protective film, an interlayer insulating film, and an insulating film for high-density mounting substrates, and is extremely useful in industry.

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Abstract

A photosensitive resin composition comprising (A) a polyimide resin, (B) a photo-acid generator, (C) a crosslinking agent having an alkoxyalkylated amino group, and (D) a compound represented by the general formula (1) [wherein R1 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and R2, R3 and R4 independently represent an alkyl group having 1 to 5 carbon atoms.

Description

明 細 書  Specification
感光性樹脂組成物  Photosensitive resin composition
技術分野  Technical field
[0001] 本発明は、半導体素子の層間絶縁膜 (パッシベーシヨン膜)、表面保護膜 (オーバ 一コート膜)、及び高密度実装基板用絶縁膜等に用いられる感光性樹脂組成物に関 する。更に詳しくは、貯蔵安定性に優れ、一般的な溶剤に対する溶解性が高ぐ高膜 厚塗布及びアルカリ現像が可能であるとともに、解像度の高い硬化物を得ることが可 能な、表面保護膜、層間絶縁膜、及び高密度実装基板用絶縁膜用途に適した感光 性樹脂組成物に関する。  The present invention relates to a photosensitive resin composition used for an interlayer insulating film (passivation film), a surface protective film (overcoat film), an insulating film for a high-density mounting substrate, and the like of a semiconductor element. More specifically, a surface protective film that has excellent storage stability, high film thickness coating with high solubility in common solvents and alkali development, and can obtain a cured product with high resolution. The present invention relates to a photosensitive resin composition suitable for use in interlayer insulating films and insulating films for high-density mounting substrates.
背景技術  Background art
[0002] 従来、電子機器の半導体素子に用いられる表面保護膜や層間絶縁膜等には、耐 熱性や機械的特性等に優れたポリイミド系樹脂が広く使用されている。また、半導体 素子の高集積化によって、膜形成精度の向上のために感光性を付与した感光性ポリ イミド系樹脂が種々提案されており、側鎖重合性ネガ型感光性ポリイミドが多用され ている。  Conventionally, polyimide-based resins having excellent heat resistance, mechanical properties, and the like have been widely used for surface protective films, interlayer insulating films, and the like used in semiconductor elements of electronic devices. In addition, various photosensitive polyimide resins that have been given photosensitivity to improve film formation accuracy due to high integration of semiconductor elements have been proposed, and side-chain polymerizable negative photosensitive polyimide is widely used. .
[0003] 例えば、特許文献 1には、アクリル側鎖を持った芳香族ポリイミド前駆体を用いた感 光性組成物が記載されている。しかし、この感光性組成物は、光透過率の問題から 高膜厚への対応が困難であるとともに、硬化後の残留応力が大きいという問題がある 。更には、溶剤現像のために環境や安全への問題もあった。なお、現像液として有 機溶剤を使用する必要があるため、アルカリ現像型の感放射線性樹脂組成物の開 発が望まれている。  [0003] For example, Patent Document 1 discloses a photosensitive composition using an aromatic polyimide precursor having an acrylic side chain. However, this photosensitive composition has problems that it is difficult to cope with a high film thickness due to the problem of light transmittance and that the residual stress after curing is large. Furthermore, there have been problems with the environment and safety due to solvent development. Since it is necessary to use an organic solvent as the developer, development of an alkali development type radiation-sensitive resin composition is desired.
[0004] これらの問題を解決するために、従来から多数の提案がなされている。例えば、特 許文献 2及び 3には、アルカリ現像可能なポジ型感光性ポリイミド組成物が提案され ている。し力、しながら、これらの感光性ポリイミド組成物の塗布性は必ずしも良好であ るとはいえず、例えば 15 m以上の高膜厚への対応は困難であった。また、十分に 高い解像度を得難いといった問題もあった。このため、高膜厚塗布及び高解像度を 要求される表面保護膜、層間絶縁膜や高密度実装基板用絶縁膜用途への対応が 困難であるとレ、つた問題があった。 [0004] In order to solve these problems, many proposals have been conventionally made. For example, Patent Documents 2 and 3 propose positive photosensitive polyimide compositions that can be alkali-developed. However, the coating properties of these photosensitive polyimide compositions are not always good, and it has been difficult to cope with a high film thickness of, for example, 15 m or more. There was also a problem that it was difficult to obtain a sufficiently high resolution. For this reason, it can be used for surface protective films, interlayer insulating films and insulating films for high-density mounting substrates that require high film thickness coating and high resolution. When it was difficult, there was a problem.
[0005] その他にも多数の特許が出願されているが、半導体素子の高集積化、薄型化等に よる要求特性を十分に満足することが困難になっている。また、これらの組成物は、 経時的にその粘度が変化し易いために、時間の経過とともに使用し難くなる場合が ある。このため、粘度の経時変化が少なぐ貯蔵安定性の良好な組成物の開発が望 まれている。  [0005] Many other patents have been filed, but it is difficult to sufficiently satisfy the required characteristics due to high integration and thinning of semiconductor elements. In addition, these compositions may be difficult to use over time because their viscosity is likely to change over time. Therefore, development of a composition having good storage stability with little change in viscosity with time is desired.
[0006] 特許文献 1 :特開昭 63— 125510号公報  [0006] Patent Document 1: Japanese Patent Laid-Open No. 63-125510
特許文献 2:特開平 3— 204649号公報  Patent Document 2: Japanese Patent Laid-Open No. 3-204649
特許文献 3:特開平 3— 209478号公報  Patent Document 3: Japanese Patent Laid-Open No. 3-209478
発明の開示  Disclosure of the invention
[0007] 本発明は、このような従来技術の有する問題点に鑑みてなされたものであり、その 課題とするところは、貯蔵安定性に優れ、一般的な溶剤に対する溶解性が高ぐ高膜 厚塗布及びアルカリ現像が可能であるとともに、解像度の高い硬化物を得ることが可 能な、表面保護膜、層間絶縁膜、及び高密度実装基板用絶縁膜用途に適した感光 性樹脂組成物を提供することにある。  [0007] The present invention has been made in view of the above-described problems of the prior art, and the object is to provide a high film that has excellent storage stability and high solubility in common solvents. A photosensitive resin composition suitable for use in surface protective films, interlayer insulating films, and insulating films for high-density mounting substrates, capable of thick coating and alkali development, and capable of obtaining a cured product with high resolution. It is to provide.
[0008] 本発明者らは上記課題を達成すべく鋭意検討した結果、以下の構成とすることによ つて、上記課題を達成することが可能であることを見出し、本発明を完成するに至つ た。即ち、本発明によれば、以下に示す感光性樹脂組成物が提供される。  [0008] As a result of intensive studies to achieve the above-mentioned problems, the present inventors have found that the above-described problems can be achieved by adopting the following configuration, and have completed the present invention. The That is, according to the present invention, the following photosensitive resin composition is provided.
[0009] [1] (A)ポリイミド樹脂、(B)光酸発生剤、(C)アルコキシアルキル化されたアミノ基 を有する架橋剤、及び (D)下記一般式(1)で表される化合物、を含有する感光性樹 脂組成物。  [1] (A) a polyimide resin, (B) a photoacid generator, (C) a cross-linking agent having an alkoxyalkylated amino group, and (D) a compound represented by the following general formula (1) And a photosensitive resin composition.
[0010] [化 1]
Figure imgf000003_0001
[0010] [Chemical 1]
Figure imgf000003_0001
(前記一般式(1)中、 R1は水素原子又は炭素数 1〜4のアルキル基を示し、 R2、 R; 、及び R4は互いに独立して、炭素数;!〜 5のアルキル基を示す) (In the general formula (1), R 1 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 2 , R ;, and R 4 are independently of each other, an alkyl group having! Indicate)
[0011] [2]前記一般式(1)中の R1が、水素原子又はメチル基である前記 [1]に記載の感 光性樹脂組成物。 [0011] [2] The sensation according to [1], wherein R 1 in the general formula (1) is a hydrogen atom or a methyl group. Photopolymer composition.
[0012] [3]前記(D)化合物が、オルト蟻酸エステルである前記 [1]又は [2]に記載の感光 性樹脂組成物。  [0012] The photosensitive resin composition according to [1] or [2], wherein the compound (D) is an orthoformate ester.
[0013] [4]フエノール性水酸基を有する樹脂を更に含有する前記 [1]〜 [3]の!/、ずれかに 記載の感光性樹脂組成物。  [4] The photosensitive resin composition according to any one of [1] to [3] above, further containing a resin having a phenolic hydroxyl group.
[0014] [5]前記 (A)ポリイミド樹脂力 アルカリ可溶性である前記 [1]〜 [4]の!/、ずれかに 記載の感光性樹脂組成物。 [5] The photosensitive resin composition according to any one of [1] to [4], wherein the (A) polyimide resin strength is alkali-soluble.
[0015] [6]前記 (A)ポリイミド樹脂が、下記一般式 (2)で示される繰り返し単位を含む前記 [6] The above (A) polyimide resin contains a repeating unit represented by the following general formula (2):
[1]〜 [5]の!/、ずれかに記載の感光性樹脂組成物。  The photosensitive resin composition according to [1] to [5]!
[0016] [化 2] [0016] [Chemical 2]
Figure imgf000004_0001
Figure imgf000004_0001
(前記一般式 (2)中、 Xは 4価の芳香族又は脂肪族炭化水素基を示し、 Aは水酸基 を有する 2価の基を示す)  (In the general formula (2), X represents a tetravalent aromatic or aliphatic hydrocarbon group, and A represents a divalent group having a hydroxyl group)
[0017] [7]前記一般式(2)中の Xが、 4価の脂肪族炭化水素基である前記 [6]に記載の感 光性樹脂組成物。 [7] The photosensitive resin composition according to [6], wherein X in the general formula (2) is a tetravalent aliphatic hydrocarbon group.
[0018] [8]前記一般式(2)中の Aが、下記一般式(3)で示される基である前記 [6]又は [7 [8] The above [6] or [7] wherein A in the general formula (2) is a group represented by the following general formula (3):
]に記載の感光性樹脂組成物。 ] The photosensitive resin composition as described in above.
[0019] [化 3]
Figure imgf000004_0002
[0019] [Chemical 3]
Figure imgf000004_0002
(前記一般式(3)中、 R5は単結合、酸素原子、硫黄原子、スルホン基、カルボニル 基、メチレン基、ジメチノレメチレン基、
Figure imgf000004_0003
(In the general formula (3), R 5 represents a single bond, oxygen atom, sulfur atom, sulfone group, carbonyl group, methylene group, dimethylenolemethylene group,
Figure imgf000004_0003
群より選択される少なくとも一種の基を示し、 R6は互いに独立して、水素原子、ァシル 基、又はアルキル基を示し、 n1及び n2は 0〜4の整数を示し、 n1と n2の少なくとも一方 は 1以上であり、 R6の少なくとも一つは水素原子である) [0020] 本発明の感光性樹脂組成物は、貯蔵安定性に優れ、一般的な溶剤に対する溶解 性が高ぐ高膜厚塗布及びアルカリ現像が可能であるとともに、解像度の高い硬化物 を得ることが可能な、表面保護膜、層間絶縁膜、及び高密度実装基板用絶縁膜用途 に適したものである。 At least one group selected from the group, R 6 independently of each other represents a hydrogen atom, an acyl group, or an alkyl group, n 1 and n 2 represent an integer of 0 to 4, n 1 and n At least one of 2 is 1 or more, and at least one of R 6 is a hydrogen atom) [0020] The photosensitive resin composition of the present invention is excellent in storage stability, can be applied to a high film thickness with high solubility in general solvents, and can be developed with an alkali, and a cured product with high resolution can be obtained. It is suitable for surface protection films, interlayer insulation films, and insulation films for high-density mounting substrates.
図面の簡単な説明  Brief Description of Drawings
[0021] [図 1]本発明の感光性樹脂組成物を用いて形成された絶縁樹脂層を有する半導体 素子の模式断面図である。  FIG. 1 is a schematic cross-sectional view of a semiconductor element having an insulating resin layer formed using the photosensitive resin composition of the present invention.
[図 2]本発明の感光性樹脂組成物を用いて形成された絶縁樹脂層を有する半導体 素子の模式断面図である。  FIG. 2 is a schematic cross-sectional view of a semiconductor element having an insulating resin layer formed using the photosensitive resin composition of the present invention.
符号の説明  Explanation of symbols
[0022] 1:基板、 2:金属パッド、 3:絶縁膜、 4:金属配線、 5:絶縁膜  [0022] 1: substrate, 2: metal pad, 3: insulating film, 4: metal wiring, 5: insulating film
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0023] 以下、本発明の実施の最良の形態について説明するが、本発明は以下の実施の 形態に限定されるものではなぐ本発明の趣旨を逸脱しない範囲で、当業者の通常 の知識に基づいて、以下の実施の形態に対し適宜変更、改良等が加えられたものも 本発明の範囲に入ることが理解されるべきである。  Hereinafter, the best mode for carrying out the present invention will be described. However, the present invention is not limited to the following embodiment, and is within the scope of the gist of the present invention. Based on the above, it should be understood that modifications and improvements as appropriate to the following embodiments also fall within the scope of the present invention.
[0024] 以下、本発明の実施の最良の形態について説明するが、本発明は以下の実施の 形態に限定されるものではなぐ本発明の趣旨を逸脱しない範囲で、当業者の通常 の知識に基づいて、以下の実施の形態に対し適宜変更、改良等が加えられたものも 本発明の範囲に入ることが理解されるべきである。  Hereinafter, the best mode for carrying out the present invention will be described. However, the present invention is not limited to the following embodiment, and is within the scope of the gist of the present invention. Based on the above, it should be understood that modifications and improvements as appropriate to the following embodiments also fall within the scope of the present invention.
[0025] 本発明の感光性樹脂組成物の一実施形態は、(A)ポリイミド樹脂、(B)光酸発生 剤、(C)アルコキシアルキル化されたアミノ基を有する架橋剤、及び (D)下記一般式 (1)で表される化合物を含有するものである。以下、その詳細について説明する。  [0025] One embodiment of the photosensitive resin composition of the present invention includes (A) a polyimide resin, (B) a photoacid generator, (C) a crosslinking agent having an alkoxyalkylated amino group, and (D) It contains a compound represented by the following general formula (1). The details will be described below.
[0026] ( (A)ポリイミド樹脂)  [0026] ((A) Polyimide resin)
(A)ポリイミド樹脂は、その分子構造中にポリイミド骨格を含む重合体 (樹脂)であれ ば特に限定されないが、アルカリ可溶性の樹脂であることが好ましい。 (A)ポリイミド 樹脂として、具体的には、前記一般式(2)で示される繰り返し単位を含むものを挙げ ること力 Sできる。ここで、前記一般式(2)中の Xは、 4価の芳香族炭化水素基又は 4価 の脂肪族炭化水素基であり、好ましくは 4価の脂肪族炭化水素基である。 4価の芳香 族炭化水素基としては、具体的には、芳香族炭化水素の母骨格の 4つの水素が置 換された 4価の基を挙げることができる。 (A) The polyimide resin is not particularly limited as long as it is a polymer (resin) containing a polyimide skeleton in its molecular structure, but is preferably an alkali-soluble resin. Specific examples of the (A) polyimide resin include those containing a repeating unit represented by the general formula (2). Here, X in the general formula (2) is a tetravalent aromatic hydrocarbon group or a tetravalent aromatic group. An aliphatic hydrocarbon group, preferably a tetravalent aliphatic hydrocarbon group. Specific examples of the tetravalent aromatic hydrocarbon group include a tetravalent group in which four hydrogen atoms in the aromatic hydrocarbon mother skeleton are replaced.
[0027] 芳香族炭化水素基としては、例えば、以下に示す基を挙げることができる。  [0027] Examples of the aromatic hydrocarbon group include the following groups.
[0028] [化 4]  [0028] [Chemical 4]
Figure imgf000006_0001
Figure imgf000006_0001
( a— 7 ) ( a— 8 )  (a— 7) (a— 8)
[0029] 4価の脂肪族炭化水素基としては、鎖状炭化水素基、脂環式炭化水素基、アルキ ル脂環式炭化水素基等を挙げることができる。より具体的には、鎖状炭化水素基、脂 環式炭化水素、又はアルキル脂環式炭化水素の母骨格の 4つの水素が置換された 4価の基を挙げること力 Sできる。なお、これらの 4価の脂肪族炭化水素基は、その構造 中の少なくとも一部に芳香族環を含むものであってもよい。ここで、鎖状炭化水素とし ては、ェタン、 n プロノ ン、 n プ'タン、 n—ペンタン、 n へキサン、 n 才クタン、 n デカン、 n ドデカン等を挙げること力 Sできる。また、脂環式炭化水素としては、具 体的には、単環式炭化水素基、二環式炭化水素基、三環式以上の炭化水素等を挙 げること力 Sでさる。 [0029] Examples of the tetravalent aliphatic hydrocarbon group include a chain hydrocarbon group, an alicyclic hydrocarbon group, and an alkyl alicyclic hydrocarbon group. More specifically, it is possible to cite a tetravalent group in which four hydrogens in the base skeleton of a chain hydrocarbon group, an alicyclic hydrocarbon, or an alkyl alicyclic hydrocarbon are substituted. These tetravalent aliphatic hydrocarbon groups may include an aromatic ring in at least a part of the structure. Examples of chain hydrocarbons include ethane, n-pronone, n-pentane, n-pentane, n-hexane, n-year-old kutan, n-decane, and n-dodecane. In addition, specific examples of alicyclic hydrocarbons include the ability S to include monocyclic hydrocarbon groups, bicyclic hydrocarbon groups, tricyclic or higher hydrocarbons, and the like.
[0030] 単環式炭化水素としては、シクロプロパン、シクロブタン、シクロペンタン、シクロペン テン、シクロへキサン、シクロへキセン、シクロオクタン等を挙げること力 Sできる。二環 式炭化水素としては、ビシクロ [2. 2. 1]ヘプタン、ビシクロ [3. 1. 1]ヘプタン、ビシ クロ [3.1.1]ヘプトー 2 ェン、ビシクロ [2· 2.2]オクタン、ビシクロ [2· 2.2]ォクト 7—ェン等を挙げることができる。また、三環式以上の炭化水素としては、トリシクロ [0030] Examples of the monocyclic hydrocarbon include cyclopropane, cyclobutane, cyclopentane, cyclopentene, cyclohexane, cyclohexene, and cyclooctane. Bicyclic hydrocarbons include bicyclo [2.2.1] heptane, bicyclo [3.1.1] heptane, Examples include [3.1.1] hepto-2en, bicyclo [2 · 2.2] octane, bicyclo [2 · 2.2] oct 7-en. Tricyclic or higher hydrocarbons include tricyclo
[5.2.1.02'6]デカン、トリシクロ [5· 2.1.02'6]デカ一 4 ェン、ァダマンタン、テト ラシクロ [6· 2.1. I3'6.02'7]ドデカン等を挙げることができる。 Include [5.2.1.0 2 '6] decane, tricyclo [5 · 2.1.0 2'6] dec one 4 E down, Adamantan, Tet Rashikuro [6 · 2.1. I 3' 6 .0 2 '7] dodecane or the like be able to.
[0031] アルキル脂環式炭化水素としては、上記の脂環式炭化水素を、メチル基、ェチル 基、プロピル基、ブチル基等のアルキル基で置換したものを挙げることができる。より 具体的には、メチルシクロペンタン、 3—ェチルー 1ーメチルー 1ーシクロへキセン、 3 —ェチル一 1—シクロへキセン等を挙げることができる。また、その構造中の少なくと も一部に芳香族環を含む 4価の脂肪族炭化水素基としては、一分子中に含まれる芳 香族環の数が、 3以下のものであることが好ましぐ 1のものであることが特に好ましい 。より具体的には、 1ーェチルー 6—メチルー 1, 2, 3, 4—テトラヒドロナフタレン、 1 ェチルー 1, 2, 3, 4 テトラヒドロナフタレン等を挙げることができる。 [0031] Examples of the alkyl alicyclic hydrocarbon include those obtained by substituting the alicyclic hydrocarbon with an alkyl group such as a methyl group, an ethyl group, a propyl group, or a butyl group. More specifically, methylcyclopentane, 3-ethyl-1-methyl-1-cyclohexene, 3-ethyl-1-cyclohexene and the like can be mentioned. In addition, as a tetravalent aliphatic hydrocarbon group containing an aromatic ring in at least a part of its structure, the number of aromatic rings contained in one molecule is 3 or less. Particularly preferred is one. More specifically, 1-ethyl-6-methyl-1,2,3,4-tetrahydronaphthalene, 1-ethyl-1,2,3,4 tetrahydronaphthalene and the like can be mentioned.
[0032] Xとして好ましい 4価の基の母核としては、 η—ブタン、シクロブタン、シクロペンタン 、シクロへキサン、ビシクロ [2· 2.1]ヘプタン、ビシクロ [2· 2.2]オクタン、ビシクロ [ 2.2.2]ォクト 7 ェン、テトラシクロ [6.2.1. I3'6.02'7]ドデカン、メチルシクロぺ ンタン等を挙げることができる。 As the mother nucleus of a tetravalent group preferable as X, η-butane, cyclobutane, cyclopentane, cyclohexane, bicyclo [2 · 2.1] heptane, bicyclo [2 · 2.2] octane, bicyclo [2.2.2 ] Okuto 7 E down, tetracyclo [6.2.1. I 3 '6 .0 2' 7] dodecane, can be exemplified Mechirushikurope lanthanum like.
[0033] Xとして更に好ましいのは、  [0033] More preferable as X is
[0034] [化 5]  [0034] [Chemical 5]
Figure imgf000007_0001
Figure imgf000007_0001
(b— 4) (b— 5) (b— 6)
Figure imgf000007_0002
(b— 4) (b— 5) (b— 6)
Figure imgf000007_0002
(b- 7) (b— 8) である。 (b- 7) (b— 8) It is.
[0035] また、 Xとして特に好ましいのは、  [0035] Particularly preferred as X is
[0036] [化 6]
Figure imgf000008_0001
[0036] [Chemical 6]
Figure imgf000008_0001
( b— 1 ) ( b— 6 ) である。これらの Xは、一種単独で又は二種以上を組み合わせて用いることができる (b— 1) (b— 6). These X can be used alone or in combination of two or more.
Yes
[0037] 前記一般式(2)中の Aは、水酸基を有する 2価の基である。水酸基を有する 2価の 基としては、前記一般式(3)で示される基を好適例として挙げることができる。ここで、 前記一般式(3)中の R5は、単結合、酸素原子、硫黄原子、スルホン基、カルボ二ノレ 基、メチレン基、ジメチルメチレン基、ビス(トリフルォロメチル)メチレン基、及び 9, 9 フルォレニレン基からなる群より選択される少なくとも一種の基である。また、前記 一般式(3)中の R6は、互いに独立して、水素原子、ァシル基又はアルキル基を示す 。好ましいァシル基としては、ホルミル基、ァセチル基、プロピオニル基、ブチロイル 基、イソブチロイル基等を挙げることができ、好ましいアルキル基としては、例えば、メ チル基、ェチル基、 n プロピル基、イソプロピル基、 n ブチル基、 n ペンチル基 、 n へキシル基、 n ォクチル基、 n デシル基、 n ドデシル基等を挙げることでき る。なお、 R6の少なくとも一つは水素原子である。また、前記一般式(3)中の n1及び n 2は、 0〜4の整数であり、 n1と n2の少なくとも一方は 1以上である。 [0037] A in the general formula (2) is a divalent group having a hydroxyl group. Preferred examples of the divalent group having a hydroxyl group include the group represented by the general formula (3). Here, R 5 in the general formula (3) is a single bond, oxygen atom, sulfur atom, sulfone group, carboninole group, methylene group, dimethylmethylene group, bis (trifluoromethyl) methylene group, and 9, 9 At least one group selected from the group consisting of fluorenylene groups. In the general formula (3), R 6 s independently represent a hydrogen atom, an acyl group or an alkyl group. Preferred examples of the acyl group include a formyl group, a acetyl group, a propionyl group, a butyroyl group, and an isobutyroyl group. Preferred alkyl groups include, for example, a methyl group, an ethyl group, an npropyl group, an isopropyl group, an n A butyl group, n pentyl group, n hexyl group, n octyl group, n decyl group, n dodecyl group and the like can be mentioned. Note that at least one of R 6 is a hydrogen atom. In the general formula (3), n 1 and n 2 are integers of 0 to 4, and at least one of n 1 and n 2 is 1 or more.
[0038] 更に、前記一般式(2)中の A (水酸基を有する 2価の基)として、具体的には、 [0038] Further, as A (divalent group having a hydroxyl group) in the general formula (2), specifically,
[0039] [化 7]
Figure imgf000008_0002
[0039] [Chemical 7]
Figure imgf000008_0002
( c 1 ) 等の水酸基を一つ有する 2価の基、  a divalent group having one hydroxyl group such as (c 1),
[0040] [化 8]
Figure imgf000009_0001
[0040] [Chemical 8]
Figure imgf000009_0001
( c - 5 )
Figure imgf000009_0002
(c-5)
Figure imgf000009_0002
(c一 6) (c一 7) (c - 8)  (c 1 6) (c 1 7) (c-8)
Figure imgf000009_0003
Figure imgf000009_0003
(c— 1 1 ) (c _ 1 2) 等の水酸基を二つ有する 2価の基、  a divalent group having two hydroxyl groups such as (c— 1 1) (c _ 1 2)
[0041] [化 9]  [0041] [Chemical 9]
Figure imgf000009_0004
Figure imgf000009_0004
等の水酸基を三つ有する 2価の基、及び  A divalent group having three hydroxyl groups such as
[0042] [化 10]  [0042] [Chemical 10]
Figure imgf000009_0005
Figure imgf000009_0005
等の水酸基を四つ有する 2価の基等を挙げることができる c C hydroxyl groups can be the mentioned divalent group of four chromatic etc.
[0043] これらのうち、水酸基を二つ有する 2価の基が好ましぐ  [0043] Of these, divalent groups having two hydroxyl groups are preferred.
[0044] [化 11]
Figure imgf000010_0001
が更に好ましい。
[0044] [Chemical 11]
Figure imgf000010_0001
Is more preferable.
[0045] 前記一般式(2)で表わされる構造としては、 Xが 4価の脂肪族炭化水素基で、 Aが( c 3)又は (c 4)である組み合わせが、溶剤や現像液への親和性が高まる傾向に あり、解像度が高くなる点で好ましい。  [0045] As the structure represented by the general formula (2), a combination in which X is a tetravalent aliphatic hydrocarbon group and A is (c 3) or (c 4) is used in a solvent or a developer. This is preferable because the affinity tends to increase and the resolution becomes high.
[0046] (A)ポリイミド樹脂は、通常、下記一般式 (4)で示されるモノマー(以下、「モノマー( 4)」とも!/、う)、及び下記一般式(5)で示されるモノマー(以下、「モノマー(5)」とも!/、う )を重合溶剤中で反応させてポリアミド酸を合成し、更にイミド化反応を行うことにより 得ること力 Sできる。ポリアミド酸の合成手順は、一般的な、モノマー(5)を重合溶剤に 溶解させた後、モノマー(4)を反応させる方法である。  [0046] (A) The polyimide resin is usually a monomer represented by the following general formula (4) (hereinafter also referred to as "monomer (4)"! /), And a monomer represented by the following general formula (5) ( Hereinafter, “monomer (5)” can be obtained by reacting! /,) In a polymerization solvent to synthesize a polyamic acid, and further carrying out an imidization reaction. The procedure for synthesizing the polyamic acid is a general method of dissolving the monomer (5) in a polymerization solvent and then reacting the monomer (4).
[0047] [化 12]  [0047] [Chemical 12]
Figure imgf000010_0002
Figure imgf000010_0002
(前記一般式 (4)中の Xは、前記一般式(2)中の Xと同義であり、一般式(5)中の R' 、 、
Figure imgf000010_0003
及び n2は、前記一般式(2)中の R5、 R6、 及び n2と同義である。 )
(X in the general formula (4) has the same meaning as X in the general formula (2), and R ′ in the general formula (5),
Figure imgf000010_0003
And n 2 have the same meanings as R 5 , R 6 , and n 2 in the general formula (2). )
[0048] 前記一般式 (4)で表わされるモノマーとしては、 Xが芳香族炭化水素基である場合 は、 [0048] As the monomer represented by the general formula (4), when X is an aromatic hydrocarbon group,
[0049] [化 13] [0049] [Chemical 13]
Figure imgf000011_0001
Figure imgf000011_0001
(a-4 - 1) 1) (a— 6— 1)
Figure imgf000011_0002
(a-4-1) 1) (a— 6— 1)
Figure imgf000011_0002
( a— 7 1 ) (a— 8 _ 1) が好ましい。また、前記- -般式 (4)で表わされるモノマーとして、 Xが脂肪族炭化水素 基である場合は、  (a—7 1) and (a—8 — 1) are preferred. As the monomer represented by the general formula (4), when X is an aliphatic hydrocarbon group,
[化 14]
Figure imgf000011_0003
[Chemical 14]
Figure imgf000011_0003
(b - 5 - 1 ) (b- 6 - 1) (b— 7— 1) (b- 8 - 1)
Figure imgf000011_0004
(b-5-1) (b- 6-1) (b— 7— 1) (b- 8-1)
Figure imgf000011_0004
(b - 9 - 1) (b_ 1 0— 1)  (b-9-1) (b_ 1 0— 1)
(b— 1 1 - 1) (b - 1 2 - 1 ) が好ましい。上記の中で、 1, 2, 3, 4 ブタンテトラカルボン酸二無水物(b— 1— 1) 、ビシクロ [2.2.2]オタ卜— 7—ェン— 2, 3, 5, 6- -テトラカルボン酸二無水物(b— 6(b— 1 1-1) (b-1 2-1) is preferred. Among the above, 1, 2, 3, 4 butanetetracarboxylic dianhydride (b— 1— 1) , Bicyclo [2.2.2] Otada-7-ene— 2, 3, 5, 6- -tetracarboxylic dianhydride (b— 6
—1)が特に好ましい。 —1) is particularly preferred.
[0051] 前記一般式(5)で表わされるモノマーとしては、  [0051] As the monomer represented by the general formula (5),
[0052] [化 15] [0052] [Chemical 15]
Figure imgf000012_0001
Figure imgf000012_0001
(c— 10— 1) (c— 10— 1)
Figure imgf000012_0002
Figure imgf000012_0002
(c - 1 1 - 1 ) (c - 12 - 1)
Figure imgf000012_0003
(c-1 1-1) (c-12-1)
Figure imgf000012_0003
( c一 3— 1 ) (c 4 1 : (c— 5— 1) が特に好ましい。  (c 1 3-1) (c 4 1: (c-5 -1)) is particularly preferred.
[0054] なお、(A)ポリイミド樹脂を得るに際しては、必要に応じて、モノマー(5)以外のジァ ミン化合物を反応させることができる。反応させることのできるジァミン化合物としては 、例えば、 p—フエ二レンジァミン、 m—フエ二レンジァミン、 4, 4,ージアミノジフエ二  [0054] When (A) the polyimide resin is obtained, a diamine compound other than the monomer (5) can be reacted as necessary. Examples of diamine compounds that can be reacted include p-phenylenediamine, m-phenylenediamine, 4, 4, -diaminodiphenyl.
4, 4'ージアミノジフエニルェタン、 4, 4'ージアミノジフエニルスルフイド、 4 , 4'ージアミノジフエニルスルホン、 3, 3, 一ジメチルー 4, 4'ージアミノビフエニル、 4 , 4'—ジァミノベンズァニリド、ビス(4—ァミノフエニル)エーテル、 1 , 5—ジァミノナフ タレン、 2, 2' ジメチルー 4, 4'ージアミノビフエニル、 5 アミノー 1一(4 ' —アミノフ ェニル)一 1 , 3, 3—トリメチルインダン、 6—ァミノ一 1— (4, 一ァミノフエ二ル)一 1 , 3 , 3—トリメチルインダン、 3, 4'—ジアミノジフエニルエーテル、 3, 3'ージァミノべンゾ フエノン、 3, 4'—ジァミノべンゾフエノン、 4, 4'ージァミノべンゾフエノン、 2, 2 ビス 4,4'-diaminodiphenylethane, 4,4'-diaminodiphenylsulfide, 4 , 4'-diaminodiphenylsulfone, 3, 3, monodimethyl-4,4'-diaminobiphenyl, 4,4'-diaminobenzanilide, bis (4-aminophenyl) ether, 1,5-diaminonaphth Thalene, 2, 2 'dimethyl-4,4'-diaminobiphenyl, 5 amino-11 (4'-aminophenyl) 1,3,3-trimethylindane, 6-amino 1- (4, aminophenol ) 1,3,3-trimethylindane, 3,4'-diaminodiphenyl ether, 3,3'-diaminobenzophenone, 3,4'-diaminobenzophenone, 4,4'-diaminobenzophenone, 2, 2 screw
[4— (4 アミノフエノキシ)フエ二ノレ]プロパン、 2, 2 ビス [4一(4ーァミノフエノキシ )フエ二ノレ]へキサフルォロプロパン、 2, 2 ビス(4ーァミノフエ二ノレ)へキサフルォロ プロパン、 2, 2 ビス [4— (4 アミノフエノキシ)フエ二ノレ]スルホン、 1 , 4 ビス(4— アミノフエノキシ)ベンゼン、 1 , 3—ビス(4—アミノフエノキシ)ベンゼン、 1 , 3—ビス(3 —アミノフエノキシ)ベンゼン、 9, 9 ビス(4 ァミノフエ二ル)一 10 ヒドロアントラセ ン、 2, 7 ジァミノフルオレン、 9, 9 ビス(4 ァミノフエ二ノレ)フルオレン、 4, 4'—メ チレン ビス(2 クロロア二リン)、 2, 2' , 5, 5,ーテトラクロロー 4, 4'ージアミノビフ ェニノレ、 2, 2,一ジクロ口一 4, 4'—ジァミノ一 5, 5,一ジメトキシビフエニル、 3, 3, - ジメトキシ一 4, 4'—ジアミノビフエニル、 1 , 4, 4'— (ρ フエ二レンイソプロピリデン) ビスァニリン、 4, 4'一(m フエ二レンイソプロピリデン)ビスァニリン、 2, 2, 一ビス [4 一(4 アミノー 2 トリフルォロメチルフエノキシ)フエニル]へキサフルォロプロパン、 4, 4, 一ジァミノ一 2, 2, 一ビス(トリフルォロメチノレ)ビフエニル、 4, 4, 一ビス [ (4 ァ ミノ一 2 トリフルォロメチノレ)フエノキシ]—オタタフルォロビフエニル、ビス(4 -ァミノ フエニル)ー4ーヒドロキシフエニルメタン、メタキシリレンジァミン、パラキシリレンジアミ ン等の芳香族ジァミン; [4— (4 aminophenoxy) phenole] propane, 2, 2 bis [4 (4-aminophenol) phenenole] hexafluoropropane, 2,2 bis (4-aminophenol) Xafluoropropane, 2,2bis [4- (4aminophenoxy) phenole] sulfone, 1,4bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,3-bis (3 —Aminophenoxy) benzene, 9, 9 bis (4 aminophenyl) 1 10 hydroanthracene, 2, 7 diaminofluorene, 9, 9 bis (4 aminophenol) fluorene, 4, 4'-methylen bis (2 chloroaniline), 2,2 ', 5,5, -tetrachloro-4,4'-diaminobiphenyl, 2,2,1 dichroic 4,4'-diamino-1,5,5,1 dimethoxybiphenyl, 3, 3, -dimethoxy-1,4'-diaminobihue 1, 4, 4'— (ρ phenylene isopropylidene) bisaniline, 4, 4 'one (m phenylene isopropylidene) bisaniline, 2, 2, 1 bis [4 1 (4 amino-2 trifluoro) Methylphenoxy) phenyl] hexafluoropropane, 4, 4, 1-diamino-1, 2, 2, 1-bis (trifluoromethinole) biphenyl, 4, 4, 1-bis [(4 amino-1-2 trifur) Olomechinole) phenoxy] —aromatic diamines such as otatafluorobiphenyl, bis (4-aminophenyl) -4-hydroxyphenylmethane, metaxylylenediamine, paraxylylenediamine, etc .;
1 , 3 プロパンジァミン、テトラメチレンジァミン、ペンタメチレンジァミン、へキサメ チレンジァミン、ヘプタメチレンジァミン、オタタメチレンジァミン、ノナメチレンジァミン 、デカメチレンジァミン、ドデカメチレンジァミン、 4, 4ージァミノヘプタメチレンジアミ ン、 1 , 4—ジアミノシクロへキサン、 1 , 3—ビス(アミノメチノレ)シクロへキサン、 1 , 4— ビス(アミノメチル)シクロへキサン、イソホロンジァミン、テトラヒドロジシクロペンタジェ 二レンジァミン、へキサヒドロー 4, 7—メタノインダニレンジメチレンジァミン、トリシクロ  1, 3 Propanediamine, tetramethylenediamine, pentamethylenediamine, hexamethylenediamine, heptamethylenediamine, otamethylenediamine, nonamethylenediamine, decamethylenediamine, dodecamethylenediamine 4,4-diaminoheptamethylenediamine, 1,4-diaminocyclohexane, 1,3-bis (aminomethinole) cyclohexane, 1,4-bis (aminomethyl) cyclohexane, isophorone Diamine, Tetrahydrodicyclopentadiene Direndiamine, Hexahydro-4,7-Methanoindanylenediethylene methylenediamine, Tricyclo
[6. 2. 1. 02' 7]—ゥンデシレンジメチルジァミン、 4, 4'ーメチレンビス(シクロへキシ ルァミン)等の脂肪族及び脂環式ジァミンを挙げることができる。 [6. 2. 1. 0 2 ' 7 ] —Undecylenedimethyldiamine, 4, 4'-methylenebis (cyclohexyl Mention may be made of aliphatic and cycloaliphatic diamines such as (Luamine).
[0056] また、本発明の感光性樹脂組成物に含有される (A)ポリイミド樹脂は、下記一般式  [0056] The (A) polyimide resin contained in the photosensitive resin composition of the present invention has the following general formula:
(6)で示される繰り返し単位を含有するものであってもよい。下記一般式 ½)で示され る構造の繰返し単位を含有することにより、この感光性樹脂組成物を用いて得られる 硬化物に応力低下機能を付与することができる。  It may contain a repeating unit represented by (6). By containing a repeating unit having a structure represented by the following general formula (1), a stress-reducing function can be imparted to a cured product obtained using this photosensitive resin composition.
[0057] [化 17]  [0057] [Chemical 17]
Figure imgf000014_0001
Figure imgf000014_0001
(前記一般式 (6)中、 Xは 4価の芳香族又は脂肪族炭化水素基を示し、 Bは炭素数 2〜20の置換若しくは非置換のアルキレン基、下記一般式(7)で示される 2価の基、 又は下記一般式(8)で示される 2価の基を示す)  (In the general formula (6), X represents a tetravalent aromatic or aliphatic hydrocarbon group, B represents a substituted or unsubstituted alkylene group having 2 to 20 carbon atoms, and is represented by the following general formula (7) A divalent group or a divalent group represented by the following general formula (8))
[0058] [化 18]
Figure imgf000014_0002
[0058] [Chemical 18]
Figure imgf000014_0002
(前記一般式(7)中、 ndは 0〜30の整数を示す) (In the general formula (7), n d represents an integer of 0 to 30)
[0059] [化 19]
Figure imgf000014_0003
[0059] [Chemical 19]
Figure imgf000014_0003
(前記一般式(8)中、 Zは炭素数 2〜20の置換又は非置換のアルキレン基を示す) (In the general formula (8), Z represents a substituted or unsubstituted alkylene group having 2 to 20 carbon atoms)
[0060] 前記一般式 (6)中の Xは、 4価の芳香族又は脂肪族炭化水素基であり、上述した 4 価の芳香族又は脂肪族炭化水素基を用いることができる。前記一般式 (6)中の Bは 、炭素数 2〜20の置換若しくは非置換のアルキレン基、前記一般式(7)で示される 2 価の基、又は前記一般式(8)で示される 2価の基である。炭素数 2〜20の置換又は 非置換のアルキレン基は、具体的には、炭素数 4以上のアルキレン基であることが好 ましい。炭素数 4以上のアルキレン基としては、例えば、 1 , 4ーブチレン基等の炭素 数 4のアルキレン基; 1 , 5—ペンチレン基等の炭素数 5のアルキレン基; 2—メチルー 1 , 5 ペンチレン基、 1 , 6 へキシレン基等の炭素数 6のアルキレン基; 1 , 10 デ シレン基、 1 , 12 ドデシレン基等の炭素数 7〜20のアルキレン基等を挙げることが できる。これらのうち、溶剤への溶解性が向上する理由から炭素数 6以上のアルキレ ン基が好ましぐ炭素数 7〜20のアルキレン基が更に好ましい。 [0060] X in the general formula (6) is a tetravalent aromatic or aliphatic hydrocarbon group, and the above-described tetravalent aromatic or aliphatic hydrocarbon group can be used. B in the general formula (6) is a substituted or unsubstituted alkylene group having 2 to 20 carbon atoms, a divalent group represented by the general formula (7), or 2 represented by the general formula (8). Is a valent group. Specifically, the substituted or unsubstituted alkylene group having 2 to 20 carbon atoms is preferably an alkylene group having 4 or more carbon atoms. Examples of the alkylene group having 4 or more carbon atoms include alkylene groups having 4 carbon atoms such as 1,4-butylene group; alkylene groups having 5 carbon atoms such as 1,5-pentylene group; 2-methyl- Examples thereof include alkylene groups having 6 carbon atoms such as 1,5 pentylene group and 1,6 hexylene group; alkylene groups having 7 to 20 carbon atoms such as 1,10 decylene group and 1,12 dodecylene group. Among these, an alkylene group having 7 to 20 carbon atoms, which is preferable to an alkylene group having 6 or more carbon atoms, is more preferable because of its improved solubility in a solvent.
[0061] または、前記一般式(6)の Bが、前記一般式(7)で示される 2価の基である場合、こ の一般式(7)における n3は 0〜30の整数である。 n3は 1〜20の整数であることが好ま しぐ;!〜 15の整数が特に好ましい。 [0061] Alternatively, when B in the general formula (6) is a divalent group represented by the general formula (7), n 3 in the general formula (7) is an integer of 0 to 30. . n 3 is preferably an integer from 1 to 20; an integer from! to 15 is particularly preferred.
[0062] 前記一般式(6)の Bが、前記一般式(8)で示される 2価の基である場合、この一般 式(8)中の Zは、炭素数 2〜20の置換又は非置換のアルキレン基である。炭素数 2〜 20の置換又は非置換のアルキレン基は、具体的には、炭素数 3以上のアルキレン基 であることが好ましい。炭素数 3以上のアルキレン基としては、例えば、 1 , 3—プロピ レン基、 2, 2 ジメチルプロピレン基、 1 , 4ーブチレン基、 1 , 5 ペンチレン基等の 炭素数 3〜5のアルキレン基; 2 メチル 1 , 5 ペンチレン基、 1 , 6 へキシレン基 等の炭素数 6のアルキレン基; 1 , 10 デシレン基、 1 , 12 ドデシレン基等の炭素 数 7〜20のアルキレン基等を挙げることができる。  [0062] When B in the general formula (6) is a divalent group represented by the general formula (8), Z in the general formula (8) is substituted or non-substituted having 2 to 20 carbon atoms. A substituted alkylene group. Specifically, the substituted or unsubstituted alkylene group having 2 to 20 carbon atoms is preferably an alkylene group having 3 or more carbon atoms. Examples of the alkylene group having 3 or more carbon atoms include alkylene groups having 3 to 5 carbon atoms such as 1,3-propylene group, 2,2 dimethylpropylene group, 1,4-butylene group, 1,5 pentylene group; 2 Examples thereof include alkylene groups having 6 carbon atoms such as methyl 1,5 pentylene group and 1,6 hexylene group; alkylene groups having 7 to 20 carbon atoms such as 1,10 decylene group and 1,12 dodecylene group.
[0063] 前記一般式(8)で示される 2価の基として好ましいのは、  [0063] The divalent group represented by the general formula (8) is preferably
[0064] [化 20]  [0064] [Chemical 20]
Figure imgf000015_0001
Figure imgf000015_0001
であ ·ο。 [0065] 前記一般式(6)中の Bとして、炭素数 2〜20の置換又は非置換のアルキレン基を 与える化合物としては、 1 , 4ーブチレンジァミン、 1 , 5 ペンチレンジァミン、 2 メチ ノレ 1 , 5—ペンチレンジァミン、 1 , 6 へキシレンジァミン、 1 , 10 デシレンジアミ ン、 1 , 12—ドデシレンジアミン等を挙げることができる。これらのうち、溶剤への溶解 性が向上する理由から炭素数 6以上のアルキレン基が好ましぐ炭素数 7〜20のァ ルキレン基が更に好ましい。 So o. [0065] As the compound giving a substituted or unsubstituted alkylene group having 2 to 20 carbon atoms as B in the general formula (6), 1, 4-butylene diamine, 1, 5 pentylene diamine, Examples include 2 methylol 1,5-pentylene diamine, 1,6 hexylene diamine, 1,10 decylene diamine, 1,12 dodecylene diamine, and the like. Among these, an alkylene group having 7 to 20 carbon atoms is more preferable, and an alkylene group having 6 or more carbon atoms is more preferable because of its improved solubility in a solvent.
[0066] 前記一般式(7)で示される 2価の基を与える化合物としては、下記一般式(9)で示 されるモノマー(以下、「モノマー(9)」とも!/、う)を挙げること力 Sできる。  [0066] Examples of the compound giving a divalent group represented by the general formula (7) include a monomer represented by the following general formula (9) (hereinafter, also referred to as "monomer (9)"! /) That power S.
[0067] [化 21]
Figure imgf000016_0001
[0067] [Chemical 21]
Figure imgf000016_0001
(前記一般式(9)中、 n3は 0〜30の整数を示す) (In the general formula (9), n 3 represents an integer of 0 to 30)
[0068] モノマー(9)の市販品としては、例えば東芝シリコーン社製の商品名: TSL9386、 TSL9346, TSL9306,東レ*ダウコーユング社製の商品名: BY16— 853C、 BY1 6— 871EG、信越化学工業社製の商品名:X— 22— 161AS、 日本ュニカー社製の 商品名: F2— 053— 01、チッソ社製の商品名:サイラプレーン FM3325、 FM3321 、 FM3311等を用いることができる。  [0068] Commercially available products of monomer (9) include, for example, product names manufactured by Toshiba Silicone Co., Ltd .: TSL9386, TSL9346, TSL9306, product names manufactured by Toray * Dow Co., Ltd .: BY16-853C, BY1 6-871EG, Shin-Etsu Chemical Co., Ltd. Product name: X-22-161AS manufactured by Nihonika Co., Ltd. Product name: F2-053-01, product name manufactured by Chisso: Silaplane FM3325, FM3321, FM3311, etc. can be used.
[0069] 前記一般式(8)で示される 2価の基を与える化合物としては、下記一般式(10)で 示されるモノマーを挙げることができる。  [0069] Examples of the compound giving a divalent group represented by the general formula (8) include a monomer represented by the following general formula (10).
[0070] [化 22]
Figure imgf000016_0002
[0070] [Chemical 22]
Figure imgf000016_0002
(前記一般式(10)中、 Zは炭素数 2〜20の置換又は非置換のアルキレン基を示す (In the general formula (10), Z represents a substituted or unsubstituted alkylene group having 2 to 20 carbon atoms.
) )
[0071] 前記一般式(10)で示されるモノマーとしては、  [0071] Examples of the monomer represented by the general formula (10) include
[0072] [化 23]
Figure imgf000017_0001
[0072] [Chemical 23]
Figure imgf000017_0001
を挙げること力 Sでさる。  Raise your power with S.
[0073] 本発明の感光性樹脂組成物に含有される (A)ポリイミド樹脂が、前記一般式 (6)で 示される繰り返し単位を含有するものである場合には、通常、前記一般式 (4)で示さ れるモノマー、及び下記一般式(11)で示されるモノマー(以下、「モノマー(11)」とも いう)を重合溶剤中で反応させてポリアミド酸を合成し、更にイミド化反応を行うことに より得ること力 Sできる。ポリアミド酸の合成手順としては、モノマー(11)を重合溶剤に 溶解させた後、モノマー(4)を反応させる一般的な方法や、モノマー(4)を重合溶剤 に溶解させた後、モノマー(1 1)を反応させる方法を挙げることができる。  [0073] When the (A) polyimide resin contained in the photosensitive resin composition of the present invention contains a repeating unit represented by the general formula (6), the general formula (4) ) And a monomer represented by the following general formula (11) (hereinafter also referred to as “monomer (11)”) in a polymerization solvent to synthesize a polyamic acid, and further carry out an imidization reaction. Power S can be obtained by The procedure for synthesizing the polyamic acid includes a general method in which the monomer (11) is dissolved in the polymerization solvent and then the monomer (4) is reacted, or the monomer (4) is dissolved in the polymerization solvent and then the monomer (1 The method of reacting 1) can be mentioned.
H N-B -NH (11)  H N-B -NH (11)
2 2  twenty two
(前記一般式(11)中、 Bは前記一般式(6)中の Bと同義である。 )  (In the general formula (11), B has the same meaning as B in the general formula (6).)
[0074] (A)ポリイミド樹脂は、前記一般式(2)で示される繰り返し単位、及び前記一般式(  [0074] (A) The polyimide resin includes a repeating unit represented by the general formula (2) and the general formula (
6)で示される繰り返し単位を含有するものであってもよ!/、。  It may contain the repeating unit shown in 6)! /.
[0075] 本発明の感光性樹脂組成物に含有される (A)ポリイミド樹脂が、前記一般式 (2)で 示される繰り返し単位及び前記一般式(6)で示される繰返し単位を含有するもので ある場合には、この (A)ポリイミド樹脂は、通常、モノマー(4)、モノマー(5)、及びモ ノマー(11)を重合溶剤中で反応させてポリアミド酸を合成し、更にイミド化反応を行う ことにより得ること力 Sできる。ポリアミド酸の合成手順は、モノマー(5)及びモノマー(1 I)を重合溶剤に溶解させた後、モノマー(4)を反応させる一般的な方法や、モノマ 一(4)を重合溶剤に溶解させた後、モノマー(5)を反応させ、その後、更にモノマー([0075] The (A) polyimide resin contained in the photosensitive resin composition of the present invention contains a repeating unit represented by the general formula (2) and a repeating unit represented by the general formula (6). In some cases, this (A) polyimide resin is usually prepared by reacting monomer (4), monomer (5), and monomer (11) in a polymerization solvent to synthesize polyamic acid, followed by imidization reaction. You can gain the power by doing it. The procedure for synthesizing the polyamic acid consists of monomer (5) and monomer (1 I) is dissolved in the polymerization solvent and then the monomer (4) is reacted, or the monomer (4) is dissolved in the polymerization solvent and then the monomer (5) is reacted, and then the monomer is further reacted. (
I I)を反応させる方法を挙げることができる。 A method of reacting I) can be mentioned.
[0076] (A)ポリイミド樹脂の、ゲルパーミエーシヨンクロマトグラフィ(GPC)により測定したポ リスチレン換算重量平均分子量(以下、「Mw」ともいう)は、通常、 2, 000—500, 00 0程度であり、好ましくは 3, 000-250, 000程度である。 Mwが上述した範囲である と、絶縁膜として十分な機械的特性や溶剤や現像液に対する十分な溶解性を得るこ と力 Sできる。  [0076] (A) Polystyrene resin weight average molecular weight (hereinafter also referred to as "Mw") measured by gel permeation chromatography (GPC) of the polyimide resin is usually about 2,000-500,000. Yes, preferably about 3,000-250,000. When Mw is in the above range, sufficient mechanical properties as an insulating film and sufficient solubility in a solvent or developer can be obtained.
[0077] (A)ポリイミド樹脂の合成に際し、全モノマー(モノマー(4) +モノマー(5) (但し、モ ノマー(11)を含有する場合は、モノマー(4) +モノマー(5) +モノマー(11) )に占め るモノマー(4)の割合は、通常 40〜60モル%であり、好ましくは 45〜55モル%であ る。全モノマーに占めるモノマー(4)の割合が 40〜60モル0 /0の範囲内であると、絶 縁膜として十分な機械的特性や溶剤や現像液に対する十分な溶解性を有する分子 量の (A)ポリイミド樹脂を得ることができる。また、ジァミン化合物を用いる場合におい て、モノマー(5)とモノマー(5)以外のジァミン化合物の合計に対するモノマー(5)の 割合は、通常、 1〜99モル0 /0であり、好ましくは 20〜95モル0 /0であり、更に好ましく は 30〜90モル0 /0である。 [0077] (A) In the synthesis of polyimide resin, all monomers (monomer (4) + monomer (5) (however, when monomer (11) is contained, monomer ( 4 ) + monomer (5) + monomer ( the proportion of the monomers which accounts to 11)) (4) is usually 40 to 60 mol%, preferably Ru 45 to 55 mol% der. ratio 40 to 60 mole 0 of monomer (4) in the total monomer If it is within the range of 0 , it is possible to obtain a (A) polyimide resin having a sufficient molecular property as an insulating film and a sufficient solubility in a solvent or a developer, and using a diamine compound. If Te odor, the ratio of the monomer (5) to the sum of the monomers (5) and the monomer (5) other than Jiamin compound is usually 1 to 99 mol 0/0, preferably at from 20 to 95 mole 0/0 There, more preferably from 30 to 90 mole 0/0.
[0078] 重合溶剤としては、通常、 N, N ジメチルホルムアミド、 N, N ジメチルァセトアミ ド、 N メチルー 2—ピロリドン、 Ί ブチロラタトン、ジメチルスルホキシド等の非プロ トン性溶剤;メタタレゾール等のプロトン性溶剤が使用される。また、必要に応じて、メ タノール、エタノール、プロパノーノレ、ブタノール、 2—メトキシエタノール、 2—ェトキ シエタノール、 2—(2—メトキシエトキシ)エタノール、 2—(2—エトキシエトキシ)ェタノ ール等のアルコール溶剤;ジグライム、トリグライム等のエーテル溶剤;トルエン、キシ レン等の芳香族炭化水素溶剤を加えてもよ!/、。 [0078] As the polymerization solvent, usually, N, N-dimethylformamide, N, N-dimethyl § Seto Ami de, N-methyl-2-pyrrolidone, I Buchirorataton, non pro tons of solvents such as dimethyl sulfoxide; Metatarezoru such protic solvents Is used. If necessary, methanol, ethanol, propanol, butanol, 2-methoxyethanol, 2-ethoxyethanol, 2- (2-methoxyethoxy) ethanol, 2- (2-ethoxyethoxy) ethanol, etc. Alcohol solvents; ether solvents such as diglyme and triglyme; aromatic hydrocarbon solvents such as toluene and xylene may be added!
[0079] イミド化反応は、通常、加熱イミド化反応と化学イミド化反応が知られているが、加熱 イミド化反応によって (Α)ポリイミド樹脂を合成することが好ましレ、。加熱イミド化反応 は、通常、ポリアミド酸の合成溶液を 120〜210°C、;!〜 16時間加熱することにより行 う。なお、必要に応じて、トルエン、キシレン等の共沸溶剤を使用して系内の水を除去 しながら反応を行ってもよい。 [0079] Heat imidization reaction and chemical imidation reaction are generally known as imidization reaction. (I) It is preferable to synthesize a polyimide resin by heat imidization reaction. The heating imidization reaction is usually carried out by heating a synthesis solution of polyamic acid at 120 to 210 ° C .;! To 16 hours. If necessary, water in the system is removed using an azeotropic solvent such as toluene or xylene. The reaction may be performed while
[0080] 本発明に!/、う「 (A)ポリイミド樹脂」には、露光、現像後の加熱処理によって最終的 に (A)ポリイミド樹脂となる「ポリイミド前駆体」が概念的に含まれる。即ち、本発明の 感光性樹脂組成物には、(A)ポリイミド樹脂に代えて、又は (A)ポリイミド樹脂とともに 、ポリイミド前駆体を含有させることもできる。ポリイミド前駆体の具体例としては、モノ マー(4)とモノマー(5)を反応させて得られる前述のポリアミド酸や、ポリアミド酸の力 ルボン酸をエステル化した化合物等を挙げることができる。ポリアミド酸のカルボン酸 をエステル化した化合物は、例えば、モノマー(4)とアルコール類を反応させることに より得られるハーフエステルを、(i)塩化チォニル等で酸クロライドに変換し、更にモノ マー(5)反応させるか、又は(ii)ビス(1H—べンゾトリァゾリル)カーボネート等で活性 エステル化合物に変換し、更にモノマー(5)と反応させることにより得られる。このポリ アミド前駆体を、露光、現像後の加熱処理することによりイミド化することで、 in situ で (A)ポリイミド樹脂とすることができる。  In the present invention, “/ (A) polyimide resin” conceptually includes a “polyimide precursor” that finally becomes (A) a polyimide resin by heat treatment after exposure and development. That is, the photosensitive resin composition of the present invention may contain a polyimide precursor instead of (A) the polyimide resin or together with (A) the polyimide resin. Specific examples of the polyimide precursor include the above-described polyamic acid obtained by reacting the monomer (4) and the monomer (5), a compound obtained by esterifying the power of polyamic acid and rubonic acid. For example, a compound obtained by esterifying a carboxylic acid of a polyamic acid can be obtained by converting, for example, a half ester obtained by reacting a monomer (4) with an alcohol into (i) an acid chloride with thionyl chloride and the like. 5) Reaction is performed, or (ii) conversion into an active ester compound with bis (1H-benzotriazolyl) carbonate or the like and further reaction with the monomer (5). This polyamide precursor can be imidized by heat treatment after exposure and development to obtain (A) a polyimide resin in situ.
[0081] (A)ポリイミド樹脂の、ゲルパーミエーシヨンクロマトグラフィ(GPC)により測定したポ リスチレン換算重量平均分子量(以下、「Mw」ともいう)は、通常、 2, 000—500, 00 0程度であり、好まし <は 3, 000—250, 000程度である。 Mw力 000以下である と、絶縁膜として十分な機械的特性が得られなくなる傾向にある。一方、 Mwが 500, 000以上であると、この (A)ポリイミド樹脂を用いて得られる感光性樹脂組成物の、溶 剤や現像液に対する溶解性が乏しくなる傾向にある。  [0081] (A) Polystyrene resin weight average molecular weight (hereinafter also referred to as "Mw") measured by gel permeation chromatography (GPC) is usually about 2,000-500,000. Yes, the preferred <is about 3,000-250,000. When the Mw force is 000 or less, sufficient mechanical properties as an insulating film tend not to be obtained. On the other hand, when the Mw is 500,000 or more, the photosensitive resin composition obtained by using this (A) polyimide resin tends to have poor solubility in a solvent or a developer.
[0082] (その他の樹脂)  [0082] (Other resins)
本発明の感光性樹脂組成物には、本発明の効果を損なわない範囲で、必要に応 じて、上述の (A)ポリイミド樹脂以外のその他の樹脂(以下、「(Α' )樹脂」ともいう)を 更に含有させること力 Sできる。含有させることのできる (Α' )樹脂の種類は、特に限定 されないが、アルカリ可溶性のものが好ましく、更には、フエノール性水酸基を有する アルカリ可溶性樹脂(以下、「フエノール樹脂」ともいう)を含有させることが、解像性が 良好となるためにより好ましい。  In the photosensitive resin composition of the present invention, other resins other than the above-mentioned (A) polyimide resin (hereinafter referred to as “(Α ′) resin”) may be used as long as the effects of the present invention are not impaired. Can be further added. The type of (Α ′) resin that can be contained is not particularly limited, but is preferably alkali-soluble, and further contains an alkali-soluble resin having a phenolic hydroxyl group (hereinafter also referred to as “phenol resin”). It is more preferable because the resolution becomes good.
[0083] 含有させることのできるフエノール性水酸基を有する樹脂としては、ノポラック樹脂、 ポリヒドロキシスチレン及びその共重合体、フエノールーキシリレングリコールジメチル エーテル縮合樹脂、クレゾ一ルーキシリレングリコールジメチルエーテル縮合樹脂、 フエノールージシクロペンタジェン縮合樹脂等を挙げることができる。 [0083] Examples of the resin having a phenolic hydroxyl group that can be contained include nopolac resin, polyhydroxystyrene and a copolymer thereof, and phenol-xylylene glycol dimethyl. Examples thereof include an ether condensation resin, a creso-l-xylylene glycol dimethyl ether condensation resin, and a phenol-dicyclopentaene condensation resin.
[0084] ノポラック樹脂としては、具体的には、フエノール/ホルムアルデヒド縮合ノポラック 樹脂、タレゾール /ホルムアルデヒド縮合ノポラック樹脂、フエノールーナフトール/ ホルムアルデヒド縮合ノポラック樹脂等を挙げることができる。 [0084] Specific examples of nopolac resins include phenol / formaldehyde condensed nopolac resins, talesol / formaldehyde condensed nopolac resins, phenol-naphthol / formaldehyde condensed nopolac resins, and the like.
[0085] ノポラック樹脂は、フエノール類とアルデヒド類を、触媒の存在下で縮合させることに より得ること力 Sできる。この際に使用されるフエノール類としては、例えば、フエノール、 o クレゾ一ノレ、 m クレゾ一ノレ、 p クレゾ一ノレ、 o ェチノレフエノーノレ、 m—ェチノレ フエノーノレ、 p ェチノレフエノーノレ、 o ブチノレフエノーノレ、 m ブチノレフエノーノレ、 p ブチルフエノール、 2, 3 キシレノール、 2, 4 キシレノール、 2, 5 キシレノール 、 2, 6 キシレノーノレ、 3, 4 キシレノーノレ、 3, 5 キシレノーノレ、 2, 3, 5 トリメチ ノレフエノーノレ、 3, 4, 5—トリメチルフエノーノレ、力テコーノレ、レゾルシノーノレ、ピロガロ ール、 α—ナフトール、 /3—ナフトール等を挙げることができる。また、アルデヒド類と しては、ホルムアルデヒド、パラホルムアルデヒド、ァセトアルデヒド、ベンズアルデヒド 等を挙げること力 Sでさる。  [0085] The nopolac resin can be obtained by condensing phenols and aldehydes in the presence of a catalyst. Examples of the phenols used in this case include phenol, o crezo monore, m crezo monore, p crezo monore, o echino refenonore, m- echenore enoenore, p echino leenore, o Butinolephenol, m Butinoleenole, p-Butylphenol, 2, 3 Xylenol, 2,4 Xylenol, 2,5 Xylenol, 2, 6 Xylenol, 3, 4 Xylenol, 3, 5 , 5 trimethenourenore, 3,4,5-trimethylphenol, force teconore, resorcinol, pyrogallol, α-naphthol, / 3-naphthol and the like. Examples of aldehydes include formaldehyde, paraformaldehyde, acetoaldehyde, and benzaldehyde.
[0086] ポリヒドロキシスチレンの共重合体を構成するヒドロキシスチレン以外のモノマーは、 特に限定されないが、具体的には、スチレン、インデン、 ρ メトキシスチレン、 p -n ーブトキシスチレン、 p— tーブトキシスチレン、 p ァセトキシスチレン、 p ヒドロキシ - a—メチルスチレン等のスチレン誘導体;(メタ)アクリル酸、メチル (メタ)アタリレー ト、ェチル(メタ)アタリレート、 n プロピル(メタ)アタリレート、イソプロピル(メタ)アタリ レート、 n ブチル(メタ)アタリレート、 sec ブチル(メタ)アタリレート、 t ブチル(メタ )アタリレート等の(メタ)アクリル酸誘導体等;メチルビュルエーテル、ェチルビニルェ ーテノレ、 n ブチノレビニノレエーテノレ、 tーブチノレビニノレエーテノレ等のビニノレエーテノレ 類;無水マレイン酸、無水ィタコン酸等の酸無水物誘導体を挙げることができる。  [0086] Monomers other than hydroxystyrene constituting the copolymer of polyhydroxystyrene are not particularly limited. Specifically, styrene, indene, ρ methoxystyrene, p-n-butoxystyrene, p-tert-butoxy Styrene derivatives such as styrene, p-acetoxystyrene, and p-hydroxy-a-methylstyrene; (meth) acrylic acid, methyl (meth) ate acrylate, ethyl (meth) acrylate, n propyl (meth) acrylate, isopropyl ( (Meth) acrylate, n-butyl (meth) acrylate, sec butyl (meth) acrylate, (meth) acrylic acid derivatives such as butyl (meth) acrylate; methyl butyl ether, ethyl vinyl etherate, n butinorevininore Vinenore Etheno, such as Ethenore, Tebutinorevininore Ethenore And acid anhydride derivatives such as maleic anhydride and itaconic anhydride.
[0087] フエノール性水酸基を有する樹脂の含有割合は、(A)ポリイミド樹脂とフエノール性 水酸基を有する樹脂の合計 100質量%に対して、 0〜90質量%とすることが好ましく 、 5〜80質量%とすることが更に好ましぐ 10〜70質量%とすることが特に好ましい。  [0087] The content of the resin having a phenolic hydroxyl group is preferably 0 to 90% by mass with respect to 100% by mass of the total of (A) the polyimide resin and the resin having a phenolic hydroxyl group, and 5 to 80% by mass. It is particularly preferable to set the content to 10 to 70% by mass.
[0088] 更に、本発明の感光性樹脂組成物には、上述のフエノール性水酸基を有する樹脂 のほかに、フエノール性低分子化合物を含有させることができる。含有させることので きるフエノール性低分子化合物の具体例としては、 4, 4'ージヒドロキシジフエニルメ タン、 4, 4'ージヒドロキシジフエニルエーテル、トリス(4ーヒドロキシフエ二ノレ)メタン、 1 , 1—ビス(4—ヒドロキシフエ二ル)一 1—フエニルェタン、トリス(4—ヒドロキシフエ二 ノレ)ェタン、 1 , 3—ビス [1一(4ーヒドロキシフエニル) 1ーメチルェチノレ]ベンゼン、 1 , 4—ビス [1— (4—ヒドロキシフエ二ル)一 1—メチルェチノレ]ベンゼン、 4, 6—ビス [ 1 4ーヒドロキシフエニル) 1 メチルェチル ] 1 , 3—ジヒドロキシベンゼン、 1 , 1—ビス(4—ヒドロキシフエ二ル)一 1— [4— { 1— (4—ヒドロキシフエ二ル)一 1—メチ ノレェチノレ }フエ二ノレ]ェタン、 1 , 1 , 2, 2 テトラ(4ーヒドロキシフエ二ノレ)エタン等を挙 げること力 Sでさる。 [0088] Further, the photosensitive resin composition of the present invention includes the above-mentioned resin having a phenolic hydroxyl group. In addition to the above, a phenolic low molecular weight compound can be contained. Specific examples of phenolic low molecular weight compounds that can be contained include 4,4'-dihydroxydiphenyl methane, 4,4'-dihydroxydiphenyl ether, tris (4-hydroxyphenol) methane, 1,1- Bis (4-hydroxyphenyl) -1-1-phenylethane, Tris (4-hydroxyphenyl) ethane, 1,3-bis [1- (4-hydroxyphenyl) 1-methylethynole] benzene, 1,4-bis [1- (4-Hydroxyphenyl) mono 1-methylethynole] benzene, 4, 6-bis [14-hydroxyphenyl) 1 methylethyl] 1,3-dihydroxybenzene, 1,1-bis (4-hydroxy 1) 1- [4— {1- (4-hydroxyphenyl) 1 1-methinoretinole} fenenore] ethane, 1, 1, 2, 2, 2 tetra (4-hydroxyphenenole) ethane, etc. Raco Leave with a force S.
[0089] フエノール性低分子化合物の含有割合は、(A)ポリイミド樹脂 100質量部(但し、 ( Α' )樹脂を更に含有させる場合には、(Α)ポリイミド樹脂と (Α' )樹脂の合計 100質 量部)に対して、 0〜; 100質量部とすることが好ましぐ;!〜 60質量部とすることが更に 好ましぐ 5〜40質量部とすることが特に好ましい。  [0089] The content ratio of the phenolic low molecular weight compound is (A) 100 parts by mass of a polyimide resin (provided that (Α ') resin is further contained, the sum of (Α) polyimide resin and (Α') resin) 100 to 100 parts by mass is preferable with respect to 100 parts by mass), more preferably 5 to 40 parts by mass, and even more preferably 5 to 40 parts by mass.
[0090] ( (B)光酸発生剤)  [0090] ((B) Photoacid generator)
本発明の感光性樹脂組成物に含有される(Β)光酸発生剤は、放射線の照射 (以下 、「露光」ともいう)により酸を発生する化合物である。このような性質を有する(Β)光酸 発生剤としては、ョードニゥム塩化合物、スルホ二ゥム塩化合物、スルホン化合物、ス ルホン酸エステル化合物、ハロゲン含有化合物、スルホンイミド化合物、ジァゾメタン 化合物等の化学増幅系の光酸発生剤;ジァゾケトン化合物等のナフトキノンジアジド (NQD)系の光酸発生剤がある。  The photoacid generator (i) contained in the photosensitive resin composition of the present invention is a compound that generates an acid upon irradiation with radiation (hereinafter also referred to as “exposure”). (I) Photoacid generators having such properties include chemical amplification of ododonium salt compounds, sulfonium salt compounds, sulfone compounds, sulfonic acid ester compounds, halogen-containing compounds, sulfonimide compounds, diazomethane compounds, etc. Photoacid generators based on naphthoquinonediazide (NQD) such as diazoketone compounds.
[0091] ョードニゥム塩化合物としては、ジフエ二ルョードニゥムトリフルォロメタンスルホネー ト、ジフエニノレョードニゥムノナフノレォロブタンスノレホネート、ジフエニノレョードニゥムピ レンスノレホネート、ジフエニノレョードニゥムドデシノレベンゼンスノレホネート、ジフエニノレ ョードニゥムへキサフルォロアンチモネート、ビス(4 t ブチルフエ二ノレ)ョードニゥ ムトリフルォロメタンスルホネート、ビス(4 t ブチルフエ二ノレ)ョードニゥムノナフル ォロブタンスルホネート、ビス(4 t ブチルフエ二ノレ)ョードニゥムカンファースルホ ネート、ビス(4 t ブチルフエニル)ョードニゥム p トルエンスルホネ一ト等を挙げ ること力 Sでさる。 [0091] Examples of the iodine salt compound include diphenyl trifluoromethane sulfonate, diphenyl benzoyl benzoate, diphen nitro sulfonate sulfonate Honate, diphenenoredo de nore benzene sulphonate, diphene enore hexahexafluoroantimonate, bis (4 t butylphenol) odon tritrifluoromethanesulfonate, bis (4 t butylphenol) ) Iodonium nonafluorobutane sulfonate, bis (4t butylphenol) oddonum camphor sulfonate, bis (4t butylphenyl) odonium p toluenesulfonate, etc. The power S
[0092] スルホ二ゥム塩化合物としては、トリフエニルスルホニゥムトリフルォロメタンスルホネ ート、 トリフエニノレスノレホニゥムノナフノレォロブタンスノレホネート、 トリフエニノレスノレホニ ゥムカンファースルホネート、トリフエニルスルホニゥムナフタレンスルホネート、 4—ヒ ドロキシフエニル.ベンジル.メチルスルホニゥム p トルエンスルホネート、 4— (フエ二 ノレチォ)フエ二ル'ジフエニルスルホニゥムへキサフルオロフォスフェート、 4, 7—ジー  [0092] Examples of sulfonium salt compounds include triphenylsulfonium trifluoromethanesulfonate, triphenylenosnorephonium nonafnorebutansnorephonate, and triphenylenoresnorephonium mumphfer. Sulfonate, triphenylsulfonium naphthalenesulfonate, 4-hydroxyphenyl.benzyl.methylsulfonium p-toluenesulfonate, 4- (phenylphenol) phenyl'diphenylsulfonium hexafluorophosphate, 4, 7 —G
4, 7 ジ n ヒドロキシ 1 ナフチルテトラヒドロチォフエニゥムトリフルォロメタン スノレホネート、 4, 7 ジ n—ブトキシ 1 ナフチノレテトラヒドロチォフエニゥムへキ サフルオロフォスフェート、 4— n—ブトキシ 1 ナフチルテトラヒドロチォフエ二ゥムト リフルォロメタンスルホネート等を挙げることができる。 4,7 di n hydroxy 1 naphthyltetrahydrothiofluorotrifluoromethane sulphonate, 4,7 di n-butoxy 1 naphthinoletetrahydrothiohexafluorophosphate, 4- n-butoxy 1 naphthyl tetrahydrothiophene Examples thereof include nimutrifluormethanesulfonate.
[0093] スルホン化合物としては、 βーケトスルホン、 β スルホニルスルホンや、これらの a—ジァゾ化合物などが挙げられる。より具体的には、フエナシルフエニルスルホン、 メシチルフエナシルスルホン、ビス(フエニルスルホニノレ)メタン、 4ートリスフエナシルス ルホン等を挙げることができる。  [0093] Examples of the sulfone compound include β-ketosulfone, βsulfonylsulfone, and a-diazo compounds thereof. More specifically, mention may be made of phenacylphenylsulfone, mesitylphenacylsulfone, bis (phenylsulfoninole) methane, 4-trisphenacylsulfone, and the like.
[0094] スルホン酸エステル化合物としては、アルキルスルホン酸エステル、ハロアルキルス ルホン酸エステル、ァリールスルホン酸エステル、イミノスルホネートなどが挙げられる 。より具体的には、ベンゾイントシレート、ピロガロールトリストリフルォロメタンスルホネ ート、ピロガロールメタンスルホン酸トリエステル、ニトロべンジルー 9, 10 ジエトキシ アントラセン一 2—スルホネート、 α メチロールべンゾイントシレート、 α—メチロー ホネート、 aーメチロールべンゾインドデシルスルホネート等を挙げることができる。  [0094] Examples of the sulfonate compound include alkyl sulfonate, haloalkyl sulfonate, aryl sulfonate, imino sulfonate, and the like. More specifically, benzoin tosylate, pyrogallol tristrifluormethane sulfonate, pyrogallol methanesulfonic acid triester, nitrobenzil 9,10 diethoxyanthracene 2-sulfonate, α-methylol benzoin tosylate, α— Examples include methylophone and a-methylolbenzoindodecyl sulfonate.
[0095] ハロゲン含有化合物としては、ハロアルキル基含有炭化水素化合物、ハロアルキル 基含有複素環式化合物等を挙げることができる。好ましレ、ハロゲン含有化合物の具 体例としては、 1 , 1—ビス(4 クロ口フエ二ノレ)一 2, 2, 2 トリクロロェタン、フエ二ノレ —ビス(トリクロロメチル) s トリァジン、 4—メトキシフエニル一ビス(トリクロロメチル) —s トリァジン、スチリル一ビス(トリクロロメチル) s トリァジン、 4—メトキシスチリ ル一ビス(トリクロロメチル) s トリァジン、ナフチル一ビス(トリクロロメチル) s ト リアジン、及び下記一般式(12)で表される s トリァジン誘導体等を挙げることができ [0095] Examples of the halogen-containing compound include haloalkyl group-containing hydrocarbon compounds, haloalkyl group-containing heterocyclic compounds, and the like. Preferable examples of halogen-containing compounds include 1, 1-bis (4 chlorophenenole) -1, 2, 2, 2 trichloroethane, phenenole bis (trichloromethyl) s triazine, 4- Methoxyphenyl monobis (trichloromethyl) —s triazine, styryl monobis (trichloromethyl) s triazine, 4-methoxystyryl monobis (trichloromethyl) s triazine, naphthyl monobis (trichloromethyl) s Lyazine and s-triazine derivatives represented by the following general formula (12).
[0096] [化 24] [0096] [Chemical 24]
Figure imgf000023_0001
Figure imgf000023_0001
[0097] 前記一般式(12)中、 Rは水素原子、炭素数 1〜4のアルキル基、又は炭素数;!〜 4 のアルコキシル基を示し、 Yはハロゲン原子を示し、 Qは酸素原子、又は硫黄原子を 示す。  [0097] In the general formula (12), R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or an alkoxyl group having! To 4 carbon atoms, Y represents a halogen atom, Q represents an oxygen atom, Or a sulfur atom is shown.
[0098] 前記一般式(12)で表される s—トリァジン誘導体は、 g線、 h線、 i線領域に広い吸 収を持っており、他のトリァジン骨格を有する一般的な感放射線性酸発生剤に比べ て酸発生効率が高ぐ残膜率の高い、絶縁性の硬化物を得ることができる。なお、前 記一般式(12)中、 Rで表される炭素数 1〜4のアルキル基としては、メチル基、ェチ ル基、 n プロピル基、イソプロピル基、 n ブチル基、 iso ブチル基、 sec ブチル 基、 tert ブチル基等を挙げることができる。また、炭素数 1〜4のアルコキシル基と しては、メトキシ基、エトキシ基、プロポキシ基、イソプロポキシ基、 n ブトキシ基、 iso ブトキシ基、 sec ブトキシ基等を挙げることができる。なお、前記一般式(12)中の Rは、水素原子、又は炭素数 1〜4のアルキル基であることが好ましぐ水素原子、メ チル基、又はェチル基であることが更に好ましい。  [0098] The s-triazine derivative represented by the general formula (12) has wide absorption in the g-line, h-line, and i-line regions, and is a general radiation-sensitive acid having another triazine skeleton. As a result, it is possible to obtain an insulating cured product having higher acid generation efficiency and higher residual film ratio than the generator. In the general formula (12), the alkyl group having 1 to 4 carbon atoms represented by R includes methyl group, ethyl group, n propyl group, isopropyl group, n butyl group, iso butyl group, A sec butyl group, a tert butyl group, etc. can be mentioned. Examples of the alkoxyl group having 1 to 4 carbon atoms include methoxy group, ethoxy group, propoxy group, isopropoxy group, n-butoxy group, iso-butoxy group, sec-butoxy group and the like. R in the general formula (12) is more preferably a hydrogen atom, a methyl group or an ethyl group, preferably a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
[0099] また、前記一般式(12)中、 Yで表されるハロゲン原子は、フッ素原子、塩素原子、 臭素原子、又はヨウ素原子であること力 S好ましく、塩素原子であることが更に好ましい 。更に、前記一般式(12)中の Qは、酸素原子であることがより好ましい。  [0099] In the general formula (12), the halogen atom represented by Y is preferably a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom. S is preferable, and a chlorine atom is more preferable. Furthermore, Q in the general formula (12) is more preferably an oxygen atom.
[0100] 前記一般式(12)で表される s—トリァジン誘導体の具体例としては、 2— [2—(フラ ン一 2 ィル)ェテュル]— 4, 6 ビス(トリクロロメチル) s トリァジン(Q =〇、 R= H、 Y= C1)、 2— [2— (5 メチルフラン一 2 ィノレ)ェテュル]— 4, 6 ビス(トリクロ ロメチノレ)一 s トリアジン(Q =〇、R= CH、 Y = C1)等を挙げること力 Sできる。なお、  [0100] Specific examples of the s-triazine derivative represented by the general formula (12) include 2- [2- (furanyl) yl]-4, 6 bis (trichloromethyl) s triazine ( Q = 〇, R = H, Y = C1), 2— [2— (5 Methylfuran-2-inole) etul] — 4, 6 Bis (trichloromethinole) s Triazine (Q = 〇, R = CH, Y = C1) etc. Power S In addition,
3  Three
これらの S—トリァジン誘導体は、一種単独で又は二種以上を組み合わせて用いるこ と力 Sできる。 These S-triazine derivatives may be used alone or in combination of two or more. And force S.
[0101] スルホンイミド化合物としては、 N— (トリフルォロメチルスルホニルォキシ)スクシンィ ミド、 N (トリフルォロメチルスルホニルォキシ)フタルイミド、 N (トリフルォロメチル スルホニルォキシ)ジフエニルマレイミド、 N (トリフルォロメチルスルホニルォキシ) ビシクロ [2· 2. 1]ヘプトー 5 ェン 2, 3 ジカルボキシイミド、 N—(トリフルォロメ チルスルホニルォキシ)ナフチルイミド等を挙げることができる。  [0101] Examples of the sulfonimide compounds include N— (trifluoromethylsulfonyloxy) succinimide, N (trifluoromethylsulfonyloxy) phthalimide, N (trifluoromethylsulfonyloxy) diphenylmaleimide, N (Trifluoromethylsulfonyloxy) Bicyclo [2.2.1] hept-5ene 2,3 dicarboximide, N- (trifluoromethylsulfonyloxy) naphthylimide and the like.
[0102] ジァゾメタン化合物としては、ビス(トリフルォロメチルスルホニル)ジァゾメタン、ビス  [0102] Diazomethane compounds include bis (trifluoromethylsulfonyl) diazomethane and bis
(シクロへキシノレスノレホニノレ)ジァゾメタン、ビス(フエニノレスノレホニノレ)ジァゾメタン等 を挙げること力 Sでさる。  (Cyclohexinoresnorehoninole) diazomethane, bis (phenenolesnorehoninole) diazomethane, etc.
[0103] また、ジァゾケトン化合物としては、 1 , 3—ジケトー 2—ジァゾ化合物、ジァゾベンゾ キノン化合物、ジァゾナフトキノン化合物等を挙げることができる。好ましいジァゾケト ン化合物の具体例としては、フエノール類の 1 , 2—ナフトキノンジアジドー 4 スルホ ン酸エステル化合物を挙げることができる。  [0103] Examples of the diazo ketone compound include 1,3-diketo 2-diazo compound, diazobenzoquinone compound, diazonaphthoquinone compound and the like. Specific examples of preferred diazoketone compounds include 1,2-naphthoquinone diazide 4 sulfonate compounds of phenols.
[0104] 上述の化合物のなかでも、スルホ二ゥム塩化合物、スルホン化合物、ハロゲン含有 化合物、ジァゾケトン化合物、スルホンイミド化合物、ジァゾメタン化合物が好ましぐ スルホ二ゥム塩化合物、ハロゲン含有化合物が更に好ましい。特に好ましいのは、 4 (フエ二ルチオ)フエ二ル'ジフエニルスルホニゥムへキサフルオロフォスフェート、 4 ホネート、 4, 7 ジ n ヒドロキシ 1 ナフチルテトラヒドロチォフエニゥムトリフル ォロメタンスルホネート、 4, 7 ジ n—ブトキシ 1 ナフチルテトラヒドロチォフエ二 ゥムへキサフルオロフォスフェート、 4— n—ブトキシ 1 ナフチルテトラヒドロチオフ ェニゥムトリフルォロメタンスルホネート、 4ーメトキシフエ二ルービス(トリクロロメチル) —s トリァジン、スチリル一ビス(トリクロロメチル) s トリァジン、 4—メトキシスチリ ル一ビス(トリクロロメチル) s トリァジンである。なお、これらの(B)光酸発生剤は、 一種単独で又は二種以上を組み合わせて用いることができる。  Of the above-mentioned compounds, sulfonium salt compounds, sulfone compounds, halogen-containing compounds, diazoketone compounds, sulfonimide compounds, and diazomethane compounds are preferred. Sulfonium salt compounds and halogen-containing compounds are more preferred. . Particularly preferred are 4 (phenylthio) phenyl'diphenylsulfonium hexafluorophosphate, 4 phonate, 4,7 dihydroxy 1 naphthyltetrahydrothiophenetrifluoromethanesulfonate, 4, 7 Di n-butoxy 1 naphthyltetrahydrothiohexafluorophosphate, 4-n-butoxy 1 naphthyltetrahydrothiophene trifluoromethanesulfonate, 4-methoxyphenyl bis (trichloromethyl) —s triazine, styryl mono Bis (trichloromethyl) s triazine, 4-methoxystyryl bis (trichloromethyl) s triazine. These (B) photoacid generators can be used singly or in combination of two or more.
[0105] (B)光酸発生剤の含有割合は、(A)ポリイミド樹脂 100質量部 (但し、(Α' )樹脂を 更に含有させる場合には、(Α)ポリイミド樹脂と (Α' )樹脂の合計 100質量部)に対し て、通常、 0. ;!〜 20質量部、好ましくは 0. 5〜10質量部である。 0. 1質量部未満で あると、露光によって発生した酸の触媒作用による化学変化を十分に生起させること が困難となる恐れがある。一方、 20質量部超であると、感光性樹脂組成物を塗布す る際に塗布むらが生じたり、硬化後の絶縁性が低下したりする恐れがある。 [0105] The content ratio of (B) photoacid generator is (A) 100 parts by mass of polyimide resin (provided that (Α ') resin is further contained, (Α) polyimide resin and (Α') resin) To 100 parts by mass) is usually from 0 .;! To 20 parts by mass, preferably from 0.5 to 10 parts by mass. Less than 1 part by mass In some cases, it may be difficult to cause sufficient chemical changes due to the catalytic action of the acid generated by exposure. On the other hand, if it exceeds 20 parts by mass, there is a risk of uneven coating when the photosensitive resin composition is applied, or the insulation after curing may be reduced.
[0106] ( (C)架橋剤)  [0106] ((C) Crosslinking agent)
(C)架橋剤は、熱や酸の作用により、樹脂等の配合組成物や他の架橋剤分子との 結合を形成する化合物である。 (C)架橋剤の具体例としては、多官能 (メタ)アタリレ ート化合物、エポキシ化合物、ヒドロキシメチル基置換フエノール化合物、アルコキシ アルキル化されたアミノ基を有する化合物等を挙げることができる。これらのうち、アル コキシアルキル化されたアミノ基を有する化合物が好ましい。なお、これらの(C)架橋 剤は、一種単独で又は二種以上を組み合わせて用いることができる。  (C) The crosslinking agent is a compound that forms a bond with a compounded composition such as a resin or other crosslinking agent molecules by the action of heat or acid. Specific examples of the (C) crosslinking agent include polyfunctional (meth) acrylate compounds, epoxy compounds, hydroxymethyl group-substituted phenol compounds, and compounds having an alkoxyalkylated amino group. Of these, compounds having an alkoxyalkylated amino group are preferred. In addition, these (C) crosslinking agents can be used individually by 1 type or in combination of 2 or more types.
[0107] 多官能(メタ)アタリレート化合物としては、トリメチロールプロパントリ(メタ)アタリレー ト、ジトリメチロールプロパンテトラ(メタ)アタリレート、ペンタエリスリトールトリ(メタ)ァク リレート、ペンタエリスリトールテトラ(メタ)アタリレート、ジペンタエリスリトールペンタ(メ タ)アタリレート、ジペンタエリスリトールへキサ(メタ)アタリレート、グリセリントリ(メタ)ァ タリレート、トリス(2—ヒドロキシェチル)イソシァヌレートトリ(メタ)アタリレート、ェチレ ングルコールジ(メタ)アタリレート、 1 , 3—ブタンジオールジ(メタ)アタリレート、 1 , 4 —ブタンジオールジ(メタ)アタリレート、 1 , 6—へキサンジオールジ(メタ)アタリレート 、ネオペンチルグリコールジ(メタ)アタリレート、ジエチレンダルコールジ(メタ)アタリレ ート、トリエチレンダルコールジ(メタ)アタリレート、ジプロピレンダルコールジ(メタ)ァ タリレート、ビス(2—ヒドロキシェチル)イソシァヌレートジ(メタ)アタリレート等を挙げる こと力 Sでさる。  [0107] Examples of the polyfunctional (meth) atalylate compound include trimethylolpropane tri (meth) atrelate, ditrimethylolpropane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (meth). Atalylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, glycerol tri (meth) acrylate, tris (2-hydroxyethyl) isocyanurate tri (meth) acrylate , Ethylene glycol di (meth) acrylate, 1,3-butanediol di (meth) acrylate, 1, 4-butanediol di (meth) acrylate, 1, 6-hexanediol di (meth) acrylate, neo Pentyl glycol di (meth) atari , Diethylene dalcol di (meth) acrylate, triethylene dalcol di (meth) acrylate, dipropylene dalcol di (meth) acrylate, bis (2-hydroxyethyl) isocyanurate di (meta) ) Attaching talates, etc.
[0108] エポキシ化合物としては、ノポラック型エポキシ樹脂、ビスフエノール型エポキシ樹 脂、脂環式エポキシ樹脂、脂肪族エポキシ樹脂等を挙げることができる。  [0108] Examples of the epoxy compound include nopolac type epoxy resin, bisphenol type epoxy resin, alicyclic epoxy resin, aliphatic epoxy resin and the like.
[0109] ヒドロキシメチル基置換フエノール化合物としては、 2 ヒドロキシメチルー 4, 6 ジ メチルフエノール、 1 , 3, 5—トリヒドロキシメチルベンゼン、 3, 5—ジヒドロキシメチル 4ーメトキシトルエン [2, 6 ビス(ヒドロキシメチル) p クレゾール]等を挙げるこ と力 Sできる。  [0109] Hydroxymethyl group-substituted phenolic compounds include 2 hydroxymethyl-4,6 dimethylphenol, 1,3,5-trihydroxymethylbenzene, 3,5-dihydroxymethyl 4-methoxytoluene [2,6 bis ( Hydroxymethyl) p cresol].
[0110] アルコキシアルキル化されたアミノ基を有する化合物としては、(ポリ)メチロール化 メラミン、(ポリ)メチロール化グリコールゥリル、(ポリ)メチロール化べンゾグアナミン、( ポリ)メチロール化ゥレア等の、一分子内に複数個の活性メチロール基を有する含窒 素化合物であって、そのメチロール基の水酸基の水素原子の少なくとも一つ力 メチ ル基ゃブチル基等のアルキル基によって置換された化合物等を挙げることができる。 なお、アルコキシアルキル化されたアミノ基を有する化合物は、複数の置換化合物を 混合した混合物であることがあり、一部自己縮合してなるオリゴマー成分を含むものも 存在するが、それらも使用すること力 Sできる。 [0110] Compounds having an alkoxyalkylated amino group include (poly) methylolation A nitrogen-containing compound having a plurality of active methylol groups in one molecule, such as melamine, (poly) methylol glycoluril, (poly) methylol benzoguanamine, (poly) methylol urea, and the like Examples include a compound in which at least one hydrogen atom of the hydroxyl group of the group is substituted with an alkyl group such as a methyl group or a butyl group. The compound having an alkoxyalkylated amino group may be a mixture in which a plurality of substituted compounds are mixed, and some of them contain an oligomer component that is partially self-condensed. Power S can be.
[0111] アルコキシアルキル化されたアミノ基を有する化合物のより具体的な例としては、以 下の式(13)〜(19)で表される化合物等を挙げることができる。  [0111] More specific examples of the compound having an alkoxyalkylated amino group include compounds represented by the following formulas (13) to (19).
[0112] [化 25] [0112] [Chemical 25]
(H3COH2C)2N
Figure imgf000027_0001
(H 3 COH 2 C) 2 N
Figure imgf000027_0001
( 1 3) ( 1 4)
Figure imgf000027_0002
(1 3) (1 4)
Figure imgf000027_0002
( 1 5) ( 1 6) (1 5) (1 6)
Figure imgf000027_0003
Figure imgf000027_0003
( 1 7) ( 1 8) (1 7) (1 8)
Figure imgf000027_0004
Figure imgf000027_0004
( 1 9)  (1 9)
[0113] なお、前記式(13)で表される化合物(へキサメトキシメチルメラミン)は、商品名「サ ィメル 300」(サイテックインダストリーズ社製)として市販されている。また、前記式(15 )で表される化合物(テトラブトキシメチルダリコールゥリル)は、商品名「サイメル 1170 」(サイテックインダストリーズ社製)として市販されている。  [0113] The compound represented by the formula (13) (hexamethoxymethylmelamine) is commercially available under the trade name “Symel 300” (manufactured by Cytec Industries). Further, the compound represented by the formula (15) (tetrabutoxymethyldaryl alcohol) is commercially available under the trade name “Cymel 1170” (manufactured by Cytec Industries).
[0114] アルコキシアルキル化されたアミノ基を有する化合物としては、へキサメトキシメチル メラミン (前記式(13) )、テトラメトキシメチルダリコールゥリル (前記式(16) )、テトラブ トキシメチルダリコールゥリル(前記式(15) )が特に好ましく、へキサメトキシメチルメラ ミン (前記式(13) )が最も好まし!/、。  [0114] Examples of the compound having an alkoxyalkylated amino group include hexamethoxymethyl melamine (formula (13)), tetramethoxymethyl darryluril (formula (16)), tetrabutoxymethyl dallicol. Ryl (formula (15)) is particularly preferred, and hexamethoxymethylmelamine (formula (13)) is most preferred! /.
[0115] (C)架橋剤の含有割合は、感光性樹脂組成物によって形成される膜が十分に硬化 する量となるように適宜設定される。具体的には、(C)架橋剤の含有割合は、(A)ポ リイミド樹脂 100質量部 (但し、(Α' )樹脂を更に含有させる場合には、(Α)ポリイミド 樹脂と (Α' )樹脂の合計 100質量部)に対して、通常、 5〜50質量部、好ましくは 10 〜40質量部である。 5質量部未満であると、得られる絶縁層の耐溶剤性ゃ耐めっき 液性が不十分となるおそれがある。一方、 50質量部超であると、感光性樹脂組成物 によって形成される薄膜の現像性が不十分となるおそれがある。 [0115] (C) The content of the crosslinking agent is such that the film formed by the photosensitive resin composition is sufficiently cured. The amount is appropriately set so as to be an amount to be adjusted. Specifically, the content ratio of (C) crosslinking agent is (A) 100 parts by mass of a polyimide resin (provided that (Α ′) resin is further contained, (Α) polyimide resin and (Α ′) It is usually 5 to 50 parts by mass, preferably 10 to 40 parts by mass with respect to 100 parts by mass of the resin). If it is less than 5 parts by mass, the resulting insulating layer may have insufficient solvent resistance and plating solution resistance. On the other hand, if it exceeds 50 parts by mass, the developability of the thin film formed by the photosensitive resin composition may be insufficient.
[0116] ( (D)化合物)  [0116] (Compound (D))
本発明の感光性樹脂組成物に含有される(D)化合物は、その化学構造が、前記 一般式(1)で表されるものである。ここで、前記一般式(1)中の R1は、水素原子又は 炭素数 1〜4のアルキル基であり、好ましくは水素原子又はメチル基、更に好ましくは 水素原子である。また、前記一般式(1)中の R2
Figure imgf000028_0001
及び R4は、互いに独立して、炭 素数 1〜5のアルキル基であり、好ましくは炭素数 1〜3のアルキル基である。 (D)化 合物の好適例としては、オルト蟻酸トリメチル、オルト蟻酸トリェチル、及びオルト蟻酸 トリプロピル等のオルト蟻酸エステルを挙げることができる。
The chemical structure of the compound (D) contained in the photosensitive resin composition of the present invention is represented by the general formula (1). Here, R 1 in the general formula (1) is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, preferably a hydrogen atom or a methyl group, and more preferably a hydrogen atom. R 2 in the general formula (1),
Figure imgf000028_0001
And R 4 are each independently an alkyl group having 1 to 5 carbon atoms, preferably an alkyl group having 1 to 3 carbon atoms. (D) Preferred examples of the compound include orthoformate esters such as trimethyl orthoformate, triethyl orthoformate, and tripropyl orthoformate.
[0117] 本発明の感光性樹脂組成物に (D)化合物を含有させると、感光性樹脂組成物の 粘度が変化し難くなる。従って、本発明の感光性樹脂組成物は、ある程度の長期間 保存した後であっても安定して使用し易いものであり、貯蔵安定性に優れている。  [0117] When the photosensitive resin composition of the present invention contains the compound (D), the viscosity of the photosensitive resin composition is difficult to change. Therefore, the photosensitive resin composition of the present invention is stable and easy to use even after being stored for a long period of time, and is excellent in storage stability.
[0118] (D)化合物の含有割合は、(A)ポリイミド樹脂 100質量部 (但し、(Α' )樹脂を更に 含有させる場合には、(Α)ポリイミド樹脂と (Α' )樹脂の合計 100質量部)に対して、 通常、 0. 1〜100質量部、好ましくは 0. ;!〜 30質量部、更に好ましくは 0. 5〜10質 量部である。 0. 1質量部未満であると、感光性樹脂組成物の粘度が変化する傾向に ある。一方、 100質量部超であると、塗布性が悪化する傾向にある。  [0118] The content ratio of the compound (D) is 100 parts by mass of (A) polyimide resin (provided that (Α ') resin is further contained, the total of (Α) polyimide resin and (Α') resin is 100) To 100 parts by mass, preferably 0.1 to 100 parts by mass, more preferably 0.5 to 10 parts by mass, and still more preferably 0.5 to 10 parts by mass. When the amount is less than 1 part by mass, the viscosity of the photosensitive resin composition tends to change. On the other hand, if it exceeds 100 parts by mass, the applicability tends to deteriorate.
[0119] (溶剤)  [0119] (Solvent)
本発明の感光性樹脂組成物には、その取り扱い性を向上させたり、粘度や保存安 定性を調節したりするために、本発明の効果を損なわない範囲で、必要に応じて、有 機系の溶剤を含有させることができる。含有させることのできる溶剤の種類は特に限 定されないが、例えば、 Ν, Ν—ジメチルホルムアミド、 Ν, Ν—ジメチルァセトアミド、 Ν—メチルー 2—ピロリドン、 γブチロラタトン、ジメチルスルホキシド等の非プロトン性 溶剤;メタタレゾール等のフエノール性プロトン性溶剤が好適に用いられる。 In the photosensitive resin composition of the present invention, in order to improve the handleability and to adjust the viscosity and storage stability, the organic resin is used as necessary within a range not impairing the effects of the present invention. The solvent can be contained. The type of solvent that can be contained is not particularly limited, but for example, aprotic such as Ν, Ν-dimethylformamide, Ν, Ν-dimethylacetamide, Ν-methyl-2-pyrrolidone, γ-butyrolataton, dimethyl sulfoxide, etc. Solvent: A phenolic protic solvent such as metataresole is preferably used.
[0120] また、本発明の感光性樹脂組成物には、上記の溶剤に代えて、又は上記の溶剤と ともに、プロピレングリコールモノアルキルエーテル類、プロピレングリコールジアルキ ルエーテル類、プロピレングリコールモノアルキルエーテルアセテート類、脂肪族ァ ルコール類、乳酸エステル類、脂肪族カルボン酸エステル類、アルコキシ脂肪族力 ルボン酸エステル類、ケトン類等の有機溶剤を含有させることができる。  [0120] Further, in the photosensitive resin composition of the present invention, propylene glycol monoalkyl ethers, propylene glycol dialkyl ethers, propylene glycol monoalkyl ether acetates instead of or together with the above solvents. Organic solvents such as alcohols, aliphatic alcohols, lactic acid esters, aliphatic carboxylic acid esters, alkoxy aliphatic sulfonic acid esters, and ketones.
[0121] プロピレングリコールモノアルキルエーテル類としては、プロピレングリコールモノメ チノレエーテノレ、プロピレングリコーノレモノェチノレエーテノレ、プロピレングリコーノレモノ プロピルエーテル、プロピレングリコールモノブチルエーテル等を挙げることができる 。プロピレングリコールジアルキルエーテル類としては、プロピレングリコールジェチ ノレエーテノレ、プロピレングリコーノレジプロピノレエーテノレ、プロピレングリコーノレジブチ ルエーテル等を挙げることができる。  [0121] Examples of the propylene glycol monoalkyl ethers include propylene glycol monomethylenoate, propylene glycol monomethenoate ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether and the like. Examples of the propylene glycol dialkyl ethers include propylene glycol jet nole etherate, propylene glycol nole propenolate nole, propylene glycol nole di ether ether and the like.
[0122] プロピレングリコールモノアルキルエーテルアセテート類としては、プロピレングリコ ールモノメチルエーテルアセテート、プロピレングリコールモノェチルエーテルァセテ ート、プロピレングリコーノレモノプロピノレエーテノレアセテート、プロピレングリコーノレモノ ブチルエーテルアセテート等を挙げることができる。脂肪族アルコール類としては、 1 ーブタノール、 2—ブタノール、 1 ペンタノ一ノレ、 2—ペンタノ一ノレ、 4ーメチルー 2— ペンタノール、 1一へキサノール等を挙げることができる。  [0122] Examples of the propylene glycol monoalkyl ether acetates include propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropino oleate acetate, propylene glycol mono butyl ether acetate and the like. Can be mentioned. Examples of aliphatic alcohols include 1-butanol, 2-butanol, 1-pentanol mononole, 2-pentanol mononole, 4-methyl-2-pentanol, 1-hexanol and the like.
[0123] 乳酸エステル類としては、乳酸メチル、乳酸ェチル、乳酸 n プロピル、乳酸イソプ 口ピル等を挙げること力 Sできる。脂肪族カルボン酸エステル類としては、酢酸 n プロ ピル、酢酸イソプロピル、酢酸 n ブチル、酢酸イソブチル、酢酸 n ァミル、酢酸イソ ァミル、プロピオン酸イソプロピル、プロピオン酸 n ブチル、プロピオン酸イソブチル 等を挙げること力 Sでさる。  [0123] Examples of the lactic acid esters include methyl lactate, ethyl acetate, n-propyl lactate, and isopropyl lactate pills. Examples of aliphatic carboxylic acid esters include n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, n-amyl acetate, isoamyl acetate, isopropyl propionate, n-butyl propionate, isobutyl propionate, etc. I'll do it.
[0124] アルコキシ脂肪族カルボン酸エステル類としては、 3 メトキシプロピオン酸メチル、 3—メトキシプロピオン酸ェチル、 3—エトキシプロピオン酸メチル、 3—エトキシプロピ オン酸ェチル等を挙げることができる。また、ケトン類としては、 2 ヘプタノン、 3 へ プタノン、 4—ヘプタノン、シクロペンタノン、シクロへキサノン等を挙げること力 Sできる。  [0124] Examples of the alkoxy aliphatic carboxylic acid esters include methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, and ethyl 3-ethoxypropionate. Examples of ketones include 2-heptanone, 3-heptanone, 4-heptanone, cyclopentanone, cyclohexanone, and the like.
[0125] これらの溶剤うち、乳酸ェチル、 2—へプタノン、シクロへキサノン、プロピレングリコ 一ノレモノメチノレエーテノレ、プロピレングリコーノレモノメチノレエーテノレアセテート、酢酸 ブチルが好ましぐ乳酸ェチル、プロピレングリコールモノメチルエーテルが特に好ま しい。これらの溶剤は、一種単独で又は二種以上を組み合わせて用いることができる 。なお、溶剤は、通常、溶剤以外の成分の合計の含有割合が;!〜 60質量%となるよ うに使用される。 [0125] Of these solvents, ethyl lactate, 2-heptanone, cyclohexanone, propylene glycol Monoethyl methinoreateolate, propyleneglycolole methinoreteate acetate, butyl acetate is preferred, and propylene glycol monomethyl ether is particularly preferred. These solvents can be used alone or in combination of two or more. The solvent is usually used so that the total content of components other than the solvent is !!-60 mass%.
[0126] (その他の添加剤)  [0126] (Other additives)
本発明の感光性樹脂組成物には、本発明の効果を損なわない範囲で、必要に応 じて、塩基性化合物、密着助剤、及び界面活性剤等のその他の添加剤を含有させる こと力 Sでさる。  The photosensitive resin composition of the present invention may contain other additives such as a basic compound, an adhesion aid, and a surfactant as necessary, as long as the effects of the present invention are not impaired. Touch with S.
[0127] (塩基性化合物)  [0127] (Basic compounds)
前記塩基性化合物としては、トリェチルァミン、トリー n—プロピルァミン、トリー n—ブ チルァミン、トリー n—ペンチルァミン、トリー n—へキシルァミン、トリー n—へプチルァ ミン、 トリー n—才クチノレアミン、 トリー n—ノニノレアミン、 トリー n—デシノレアミン、 トリー n —ドデシルァミン、 n—ドデシルジメチルァミン等のトリアルキルアミン類ゃピリジン、ピ リダジン、イミダゾール等の含窒素複素環化合物等を挙げることができる。塩基性化 合物の含有量は、(A)ポリイミド樹脂 100質量部に対して、通常、 5質量部以下、好ま しくは 3質量部以下である。塩基性化合物の含有量が、(A)ポリイミド樹脂 100質量 部に対して 5質量部超であると、光酸発生剤が十分に機能しなくなる恐れがある。  Examples of the basic compound include triethylamine, tree n-propylamine, tree n-butylamine, tree n-pentylamine, tree n-hexylamine, tree n-heptylamine, tree n-year-old cutinoleamine, tree n-noninoleamine, tree Examples thereof include trialkylamines such as n-decinoleamine, tri-n-dodecylamine, and n-dodecyldimethylamine, and nitrogen-containing heterocyclic compounds such as pyridine, pyridazine and imidazole. The content of the basic compound is usually 5 parts by mass or less, preferably 3 parts by mass or less with respect to 100 parts by mass of the (A) polyimide resin. If the content of the basic compound is more than 5 parts by mass with respect to 100 parts by mass of the (A) polyimide resin, the photoacid generator may not function sufficiently.
[0128] (密着助剤)  [0128] (Adhesion aid)
本発明の感光性樹脂組成物には、基板との密着性を向上させるために密着助剤を 含有させることもできる。密着助剤としては、官能性シランカップリング剤が有効であ る。ここで、官能性シランカップリング剤とは、カルボニル基、メタクリロイル基、イソシ ァネート基、エポキシ基等の反応性置換基を有するシランカップリング剤をいう。具体 例としては、トリメトキシシリル安息香酸、 Ί—メタクリロキシプロピルトリメトキシラン、ビ ニルトリァセトキシシラン、ビュルトリメトキシシラン、 γ—イソシアナートプロピルトリエト へキシル)ェチルトリメトキシシラン等を挙げることができる。密着助剤の含有量は、 ( Α)ポリイミド樹脂 100質量部に対して、 10質量部以下とすることが好ましい。 [0129] (界面活性剤) The photosensitive resin composition of the present invention may contain an adhesion assistant in order to improve adhesion to the substrate. A functional silane coupling agent is effective as the adhesion assistant. Here, the functional silane coupling agent refers to a silane coupling agent having a reactive substituent such as a carbonyl group, a methacryloyl group, an isocyanate group, or an epoxy group. Specific examples include trimethoxysilylbenzoic acid, Ί -methacryloxypropyltrimethoxylane, vinyltriacetoxysilane , butyltrimethoxysilane , γ-isocyanatopropyltriethoxyhexyl) ethyltrimethoxysilane and the like. be able to. The content of the adhesion assistant is preferably 10 parts by mass or less with respect to 100 parts by mass of (ii) polyimide resin. [0129] (Surfactant)
本発明の感光性樹脂組成物には、塗布性、消泡性、レべリング性等の諸特性を向 上させる目的で、界面活性剤を含有させることもできる。界面活性剤としては、例えば 、 BM— 1000、 BM— 1100 (以上、 BMケミ一社製)、メガファック F142D、同 F172 、同 F173、同 F183 (以上、大日本インキ化学工業社製)、フロラード FC— 135、同 FC- 170C,同 FC— 430、同 FC— 431 (以上、住友スリーェム社製)、サーフロン S — 112、同 S— 113、同 S— 131、同 S— 141、同 S— 145 (以上、旭硝子社製)、 SH — 28PA、同— 190、同— 193、 SZ— 6032、 SF— 8428 (以上、東レダウコーユング シリコーン社製)等の商品名で市販されているフッ素系界面活性剤を使用することが できる。界面活性剤の含有量は、(A)ポリイミド樹脂 100質量部に対して、 5質量部 以下とすることが好ましい。  The photosensitive resin composition of the present invention may contain a surfactant for the purpose of improving various properties such as coating properties, defoaming properties, and leveling properties. Surfactants include, for example, BM-1000, BM-1100 (above, manufactured by BM Chemi Co., Ltd.), MegaFuck F142D, F172, F173, F183 (above, manufactured by Dainippon Ink & Chemicals, Inc.), Florard FC-135, FC-170C, FC-430, FC-431 (Sumitomo 3EM), Surflon S-112, S-113, S-131, S-141, S- 145 (above, manufactured by Asahi Glass Co., Ltd.), SH-28PA, i-190, ibid-193, SZ-6032, SF-8428 (above, made by Toray Dow Cowing Silicone), etc. Surfactants can be used. The content of the surfactant is preferably 5 parts by mass or less with respect to 100 parts by mass of the (A) polyimide resin.
[0130] 本発明の実施形態である感光性樹脂組成物は、特に、半導体素子の表面保護膜 や層間絶縁膜材料等として好適に使用することができる。本発明の実施形態の感光 性樹脂組成物を支持体 (樹脂付き銅箔、銅張り積層板や金属スパッタ膜を付けたシリ コンウェハーやアルミナ基板等)に塗工し、乾燥して溶剤等を揮発させて塗膜を形成 する。その後、所望のマスクパターンを介して露光し、加熱処理(以下、この加熱処理 を「PEB」という)を行い、フエノール環と架橋剤との反応を促進させる。次いで、アル カリ性現像液により現像して、未露光部を溶解、除去することにより、所望のパターン を得ること力 Sできる。更に、絶縁膜特性を発現させるために加熱処理を行うことにより 、硬ィ匕膜を得ること力できる。 [0130] The photosensitive resin composition according to an embodiment of the present invention can be suitably used particularly as a surface protective film or an interlayer insulating film material of a semiconductor element. The photosensitive resin composition of the embodiment of the present invention is applied to a support (a copper foil with resin, a copper wafer with a copper clad laminate, a silicon wafer with a metal sputtered film, an alumina substrate, etc.) and dried to remove a solvent or the like Volatilizes to form a coating film. Thereafter, exposure is performed through a desired mask pattern, and heat treatment (hereinafter, this heat treatment is referred to as “PEB”) is performed to promote the reaction between the phenol ring and the crosslinking agent. Subsequently, development with an alkaline developer can dissolve and remove the unexposed areas, thereby obtaining a desired pattern. Furthermore, a hard film can be obtained by performing a heat treatment in order to develop the insulating film characteristics.
[0131] 感光性樹脂組成物を支持体に塗工する方法としては、例えば、デイツビング法、ス プレー法、バーコート法、ロールコート法、又はスピンコート法等の塗布方法を用いる ことができる。また、塗布の厚さは、塗布手段、組成物溶液の固形分濃度や粘度を調 節することにより、適宜制御することができる。塗工後は、溶剤を揮発させるため、通 常、プリベータ処理を行う。その条件は、感光性樹脂組成物の配合組成や使用膜厚 等によって異なる力 通常、 70〜; 150°C、好ましくは 80〜; 140°Cで、 1〜60分程度で ある。 [0131] As a method for applying the photosensitive resin composition to the support, for example, a coating method such as a dubbing method, a spray method, a bar coating method, a roll coating method, or a spin coating method can be used. The coating thickness can be appropriately controlled by adjusting the coating means and the solid content concentration and viscosity of the composition solution. After coating, a pre-beta treatment is usually performed to evaporate the solvent. The conditions vary depending on the composition of the photosensitive resin composition, the film thickness used, etc. Usually 70 to 150 ° C, preferably 80 to 140 ° C, and about 1 to 60 minutes.
[0132] 露光に用いられる放射線としては、例えば、低圧水銀灯、高圧水銀灯、メタルハラ イドランプ、 g線、 i線等の紫外線や電子線、レーザー光線等を挙げることができる。露 光量は、使用する光源や樹脂膜厚等によって適宜選定されるが、例えば、高圧水銀 灯から紫外線を照射する場合、樹脂膜厚 10〜50 111では、通常、 100〜5000mJ /cm2程度である。 [0132] Examples of radiation used for exposure include low-pressure mercury lamp, high-pressure mercury lamp, and metal harassment. Examples thereof include ultraviolet rays such as id lamp, g-line and i-line, electron beam, and laser beam. Exposure light amount is suitably selected according to the light source and the resin film thickness and the like to be used, for example, when irradiated with ultraviolet rays from a high pressure mercury lamp, the resin thickness of 10 to 50 111, typically at about 100~5000mJ / cm 2 is there.
[0133] 露光後は、発生した酸によるフエノール環と(C)架橋剤との硬化反応を促進させる ために PEBを行う。 PEBの条件は、感光性樹脂組成物の配合組成や使用膜厚等に よって異なる力 通常、 70〜; 150°C、好ましくは 80〜; 140°Cで、;!〜 60分程度である 。その後、アルカリ性現像液により現像して、未露光部を溶解、除去することによって 所望のパターンを形成する。この場合の現像方法としては、シャワー現像法、スプレ 一現像法、浸漬現像法、パドル現像法等を挙げることができる。現像条件は、通常、 20〜40°Cで;!〜 10分程度である。  [0133] After the exposure, PEB is performed to promote the curing reaction between the phenol ring and the (C) crosslinking agent by the generated acid. PEB conditions vary depending on the composition of the photosensitive resin composition and the film thickness used, etc. Usually 70 to 150 ° C, preferably 80 to 140 ° C, and! To 60 minutes. Thereafter, development is performed with an alkaline developer, and a desired pattern is formed by dissolving and removing unexposed portions. Examples of the developing method in this case include a shower developing method, a spray developing method, an immersion developing method, and a paddle developing method. The development conditions are usually 20 to 40 ° C;! To 10 minutes.
[0134] 前記アルカリ性現像液としては、例えば、水酸化ナトリウム、水酸化カリウム、アンモ ユア水、テトラメチルアンモニゥムヒドロキシド、コリン等のアルカリ性化合物を、濃度が ;!〜 10質量%程度になるように水に溶解したアルカリ性水溶液を挙げることができる 。前記アルカリ性水溶液には、例えば、メタノール、エタノール等の水溶性の有機溶 剤や界面活性剤等を適量添加することもできる。なお、アルカリ性現像液で現像した 後は、水で洗浄し、乾燥する。  [0134] Examples of the alkaline developer include alkaline compounds such as sodium hydroxide, potassium hydroxide, ammonia water, tetramethylammonium hydroxide, choline, and the like; Examples thereof include an alkaline aqueous solution dissolved in water. An appropriate amount of a water-soluble organic solvent such as methanol or ethanol, a surfactant, or the like can be added to the alkaline aqueous solution. After developing with an alkaline developer, wash with water and dry.
[0135] 更に、現像後に絶縁膜としての特性を十分に発現させるために、加熱処理を行うこ とによって十分に硬化させることができる。このような硬化条件は特に制限されるもの ではないが、硬化物の用途に応じて、 100〜400°Cの温度で、 30分〜 10時間程度 加熱すれば、感光性樹脂組成物を硬化させることができる。また、硬化を十分に進行 させたり、得られたパターン形状の変形を防止するために多段階で加熱することもで きる。例えば、二段階で行う場合、第一段階では、 50〜200°Cの温度で、 5分〜 2時 間程度加熱し、更に第二段階では、 100〜400°Cの温度で、 10分〜 10時間程度加 熱して硬ィ匕させることあでさる。  [0135] Furthermore, in order to sufficiently develop the characteristics as an insulating film after development, the film can be sufficiently cured by heat treatment. Although such curing conditions are not particularly limited, depending on the use of the cured product, the photosensitive resin composition is cured by heating at a temperature of 100 to 400 ° C for about 30 minutes to 10 hours. be able to. In addition, heating can be performed in multiple stages in order to sufficiently advance the curing or to prevent deformation of the obtained pattern shape. For example, when performing in two stages, the first stage is heated at a temperature of 50 to 200 ° C. for about 5 minutes to 2 hours, and further in the second stage at a temperature of 100 to 400 ° C. for 10 minutes to Heat for about 10 hours to harden.
[0136] このような硬化条件であれば、加熱設備としてホットプレート、オーブン、赤外線炉、 マイクロ波オーブン等を使用することができる。  [0136] Under such curing conditions, a hot plate, oven, infrared furnace, microwave oven, or the like can be used as the heating equipment.
[0137] 次に、本発明の実施形態の感光性樹脂組成物を用いた半導体素子について、図 面により説明する。図 1に示すように、パターン状の金属パッド 2が形成された基板 1 上に、本実施形態の感光性樹脂組成物を用いてパターン状の絶縁膜 3を形成する。 次いで、金属パッド 2と接続するように金属配線 4を形成すれば、半導体素子を得る こと力 Sでさる。 [0137] Next, a semiconductor element using the photosensitive resin composition of the embodiment of the present invention is illustrated. This will be explained by the surface. As shown in FIG. 1, a patterned insulating film 3 is formed on a substrate 1 on which a patterned metal pad 2 is formed using the photosensitive resin composition of the present embodiment. Next, if the metal wiring 4 is formed so as to be connected to the metal pad 2, the semiconductor element can be obtained with the force S.
[0138] 更に、図 2に示すように、この金属配線 4上に、本実施形態の感光性樹脂組成物を 用いてパターン状の絶縁膜 5を形成してもよい。このようにして、本実施形態である感 光性樹脂組成物を用いれば、この感光性樹脂組成物によって形成された絶縁樹脂 層を有する半導体素子を得ることができる。  Further, as shown in FIG. 2, a patterned insulating film 5 may be formed on the metal wiring 4 by using the photosensitive resin composition of the present embodiment. Thus, if the photosensitive resin composition which is this embodiment is used, the semiconductor element which has the insulating resin layer formed of this photosensitive resin composition can be obtained.
実施例  Example
[0139] 以下、本発明を実施例に基づいて具体的に説明するが、本発明はこれらの実施例 に限定されるものではない。なお、実施例、比較例中の「部」及び「%」は、特に断ら ない限り質量基準である。また、各種物性値の測定方法、及び評価方法を以下に示 す。  [0139] Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited to these examples. In the examples and comparative examples, “parts” and “%” are based on mass unless otherwise specified. The methods for measuring and evaluating various physical properties are shown below.
[0140] [分子量(Mw) ]:東ソ一社製 GPCカラム(TSKgel a ~ M 1本、 TSKgel a - 2500 1本)を用い、流量: 1 . 0ミリリットル/分、溶出溶媒: N, N—ジメチルホルムァ ミド、カラム温度: 35°Cの分析条件で、単分散ポリスチレンを標準とするゲルパーミエ ーシヨンクロマトグラフィー (GPC)により測定した。  [0140] [Molecular weight (Mw)]: GPC column (TSKgel a ~ M, 1 TSKgel a-2500) manufactured by Tosoh Corporation, flow rate: 1.0 ml / min, elution solvent: N, N —Dimethylformamide, column temperature: Measured by gel permeation chromatography (GPC) using monodisperse polystyrene as a standard under analytical conditions of 35 ° C.
[0141] [混合性] :各成分を表 3に示す組成比で混合したときに、透明で均一な溶液になつ た場合を「良好」、半透明又は不透明な溶液になった場合を「不良」とした。  [0141] [Mixability]: When each component is mixed in the composition ratio shown in Table 3, it is “good” when it becomes a transparent and uniform solution, and “bad” when it becomes a translucent or opaque solution. "
[0142] [塗布性]: 6インチのシリコンェゥハーに感光性樹脂組成物をスピンコートし、ホット プレートで 1 10°C、 3分間加熱し、 20 πι厚の均一な塗膜を作製した。塗膜にクラッ ク等の欠陥が発生したものを「不良」、クラック等の欠陥が発生しなかったものを「良好 」とした。  [0142] [Applicability]: A photosensitive resin composition was spin-coated on a 6-inch silicon wafer and heated on a hot plate at 110 ° C. for 3 minutes to prepare a uniform coating film having a thickness of 20 πι. A coating film with defects such as cracks was evaluated as “bad”, and a crack without defects such as cracks was determined as “good”.
[0143] [解像度]:まず、上記塗布性の評価試験と同様の手順によって、塗膜を形成したシ リコンウェハーを得た。得られたシリコンウェハーを、ァライナー(Suss Microtec社 製 MA— 150)を用いて露光した。露光は、パターンマスクを介して高圧水銀灯から 紫外線を照射して行った。紫外線は、波長 350nmにおける露光量が 1000〜5000 mj/cm2となるように照射した。次いで、露光したシリコンウェハーをホットプレートで 110°C、 3分間加熱(PEB)し、 2· 38質量0 /0テトラメチルアンモニゥムハイドロキサイド 水溶液を用いて 23°Cで 60秒間、浸漬現像した。浸漬現像後、シリコンウェハー(塗 膜)上の、パターンマスク通りに残渣がなく形成されたスクェアホールパターンの寸法 を測定した。この測定した寸法のうちの最小寸法を「解像度 m)」とした。なお、測 定した解像度が 50 a m以下であった場合を「良好」と評価し、 50 a m超であった場 合を「不良」と評価した。解像度の測定及び評価結果を表 3に示す。 [Resolution]: First, a silicon wafer on which a coating film was formed was obtained by the same procedure as in the applicability evaluation test. The obtained silicon wafer was exposed using an aligner (MA-150 manufactured by Suss Microtec). The exposure was performed by irradiating ultraviolet rays from a high-pressure mercury lamp through a pattern mask. The ultraviolet rays were irradiated so that the exposure amount at a wavelength of 350 nm was 1000 to 5000 mj / cm 2 . Then, expose the exposed silicon wafer with a hot plate. 110 ° C, 3 minutes heating (PEB), 60 seconds at 23 ° C using a 2-38 mass 0/0 tetramethylammonium Niu arm hydroxide key side solution and immersion development. After immersion development, the dimensions of the square hole pattern formed on the silicon wafer (coating film) without any residue as measured by the pattern mask were measured. The minimum dimension among the measured dimensions was defined as “resolution m)”. When the measured resolution was 50 am or less, it was evaluated as “good”, and when it was above 50 am, it was evaluated as “bad”. Table 3 shows the resolution measurement and evaluation results.
[0144] [粘度の経時変化]:調製した感光性樹脂組成物を室温で 7日間保管した。保管前 後の粘度 (mPa' s)を、 E型粘度計を使用して測定し、粘度の保管前後の変化率を 次式により算出した。 [Change in viscosity with time]: The prepared photosensitive resin composition was stored at room temperature for 7 days. The viscosity before storage (mPa's) was measured using an E-type viscometer, and the rate of change in viscosity before and after storage was calculated by the following equation.
「粘度変化率(%)」 = (保管後の粘度 (mPa · s) ) / (保管前の粘度 (mPa · s) ) X 10 o-ioo  "Viscosity change rate (%)" = (viscosity after storage (mPa · s)) / (viscosity before storage (mPa · s)) X 10 o-ioo
[0145] (合成例 1)  [0145] (Synthesis example 1)
容量 500mLのセパラブルフラスコ中に、 2, 2—ビス(3—アミノー 4—ヒドロキシフエ 二ル)一 1 , 1 , 1 , 3, 3, 3—へキサフルォロプロパン(モノマー「ΜΑ— 1」)41 · lg (5 0mol%)、 1 , 10—デシレンジァミン(モノマー「ΜΒ—1」)19· 4g (50mol%)、及び N—メチルー 2—ピロリドン(以下、「NMP」と記す) 195gを加えた。室温下で撹拌し てそれぞれのモノマーが溶解した後、 1 , 2, 3, 4—ブタンテトラカルボン酸二無水物 (モノマー「MC— 2」)44. 5g (100mol%)を仕込んだ。窒素下で 120°C、 5時間撹 拌した後、 180°Cに昇温させて 5時間脱水反応を行った。反応終了後、反応混合物 を水中に投じ、生成物を再沈、ろ過、真空乾燥をすることによって、 91gの重合体 (A — 1)を得た。得られた重合体 (A—1)の分子量 Mwは 23100であった。また、 IR分 析を行い、イミドを示す l YScnT1の吸収があることを確認した。 In a separable flask with a volume of 500 mL, 1, 2, 1-bis (3-amino-4-hydroxyphenyl) 1, 1, 1, 1, 3, 3, 3-hexafluoropropane (monomer “ΜΑ— 1 )) 41 · lg (50 mol%), 1,10-decylenediamine (monomer “ΜΒ-1”) 19.4 g (50 mol%), and N-methyl-2-pyrrolidone (hereinafter referred to as “NMP”) 195 g added. After each monomer was dissolved by stirring at room temperature, 44.5 g (100 mol%) of 1,2,3,4-butanetetracarboxylic dianhydride (monomer “MC-2”) was charged. After stirring at 120 ° C for 5 hours under nitrogen, the temperature was raised to 180 ° C and dehydration was performed for 5 hours. After completion of the reaction, the reaction mixture was poured into water, and the product was reprecipitated, filtered and vacuum dried to obtain 91 g of polymer (A-1). The molecular weight Mw of the obtained polymer (A-1) was 23100. In addition, IR analysis was performed and it was confirmed that there was an absorption of l YScnT 1 indicating imide.
[0146] (合成例 2、 3) [0146] (Synthesis Examples 2 and 3)
表 1に示す配合処方でそれぞれのモノマー及び NMPを配合したこと以外は、前述 の合成例 1と同様にして重合体 (A— 2)及び (A— 3)を得た。得られた重合体の収量 (g)及び分子量 Mwを表 1に示す。また、得られたいずれの重合体についても、イミド を示す YScn 1の吸収があることを IR分析により確認した。なお、合成例;!〜 3で 用いたモノマーの構造を以下に示す。 [0147] [化 26]
Figure imgf000035_0001
Polymers (A-2) and (A-3) were obtained in the same manner as in Synthesis Example 1 except that the respective monomers and NMP were blended according to the blending recipe shown in Table 1. Table 1 shows the yield (g) and molecular weight Mw of the obtained polymer. Moreover, it was confirmed by IR analysis that any of the obtained polymers had absorption of YScn 1 indicating imide. The structures of the monomers used in Synthesis Examples;! To 3 are shown below. [0147] [Chemical 26]
Figure imgf000035_0001
MA- MA-
[0148] [化 27] [0148] [Chemical 27]
MB- 1
Figure imgf000035_0002
MB-1
Figure imgf000035_0002
MB- 2  MB-2
[0149] [化 28]  [0149] [Chemical 28]
Figure imgf000035_0003
Figure imgf000035_0003
MC— 1 MC- 2 MC— 1 MC- 2
[0150] [表 1] [0150] [Table 1]
Figure imgf000036_0001
Figure imgf000036_0001
(合成例 4:フエノール性水酸基を有する樹脂(P— 1) )  (Synthesis Example 4: Resin having a phenolic hydroxyl group (P-1))
m—タレゾールと p—タレゾールをモル比 60 : 40の割合で混合し、これにホルマリン を加え、シユウ酸触媒を用いて常法により縮合して重量平均分子量 (Mw) 8 700の クレゾールノポラック樹脂(P l)を得た。また、この樹脂の OH当量は、 122g/eqで あった。 m-Talesol and p-Talesol were mixed at a molar ratio of 60:40, and formalin was added thereto, followed by condensation by a conventional method using a oxalic acid catalyst, and a weight average molecular weight (Mw) of 8 700. Cresol nopolac resin (Pl) was obtained. The OH equivalent of this resin was 122 g / eq.
[0152] (実施例 1) [0152] (Example 1)
合成例 1で得られた重合体 (A— 1) 100部、光酸発生剤(B— 1) 1部、架橋剤(C 1) 30部、化合物(D— 1) 5部、及び溶剤(乳酸ェチル (EU ) 220部を混合することに より、感光性樹脂組成物(実施例 1)を得た。得られた感光性樹脂組成物の混合性の 評価は「良好」、塗布性の評価は「良好」、及びパターユング性の評価は「良好」であ つた。また、粘度の経時変化は 0%であった。  100 parts of the polymer obtained in Synthesis Example 1 (A-1), 1 part of a photoacid generator (B-1), 30 parts of a crosslinking agent (C1), 5 parts of a compound (D-1), and a solvent ( A photosensitive resin composition (Example 1) was obtained by mixing 220 parts of ethyl lactate (EU), and the evaluation of the mixing property of the obtained photosensitive resin composition was “good”. The evaluation of “good” and the patterning property was “good.” The change with time in viscosity was 0%.
[0153] (実施例 2〜6、比較例;!〜 3) [Examples 2 to 6, comparative examples;! To 3]
表 2に示す配合処方とすること以外は、前述の実施例 1と同様にして感光性樹脂組 成物(実施例 2〜6、比較例 1〜3)を得た。得られた感光性樹脂組成物の混合性、塗 布性、及びパターユング性の評価結果、並びに粘度の経時変化を表 3に示す。なお 、表 2中の略号の意味は以下に示す通りである。  A photosensitive resin composition (Examples 2 to 6 and Comparative Examples 1 to 3) was obtained in the same manner as in Example 1 except that the formulation shown in Table 2 was used. Table 3 shows the evaluation results of the mixing property, coating property, and patterning property of the obtained photosensitive resin composition, and the change with time of the viscosity. The meanings of the abbreviations in Table 2 are as shown below.
[0154] <その他の樹脂〉 [0154] <Other resins>
P- 1 :合成例 4で得たクレゾールノポラック樹脂  P-1: Cresol nopolak resin obtained in Synthesis Example 4
P— 2:フエノール'キシリレンダリコールジメチルエーテル縮合樹脂(三井化学社製 、商品名:ミレックス(登録商標) XLC— 3L)  P-2: Fenol xylylene alcohol dimethyl ether condensation resin (Mitsui Chemicals, trade name: Millex (registered trademark) XLC-3L)
[0155] < (B)光酸発生剤〉 [0155] <(B) Photoacid generator>
B— 1:スチリル一ビス(トリクロロメチル) s トリァジン  B—1: styryl monobis (trichloromethyl) s triazine
B— 2: 4, 7 ジ n—ブトキシ 1 ナフチルテトラヒドロチォフエニゥムトリフルォロ メタンスルホネート  B-2: 4, 7 Di n-Butoxy 1 Naphthyltetrahydrothiophenetrifluoromethane sulfonate
B— 3 : 2— [2— (フラン一 2 ィノレ)ェテュル]— 4, 6 ビス(トリクロロメチル) s— トリァジン(三和ケミカル社製、商品名: TFE トリァジン)  B—3: 2— [2— (Franchi 2 Inole) Etul] — 4, 6 Bis (trichloromethyl) s— Triazine (trade name: TFE Triazine, manufactured by Sanwa Chemical Co., Ltd.)
B— 4 : 2— [2—(5 メチルフランー2 ィノレ)ェテュル ]—4, 6 ビス(トリクロロメチ ル) s トリァジン(三和ケミカル社製、商品名: TME トリァジン)  B—4: 2— [2— (5 Methylfuran-2-inole) ethyl] —4,6 Bis (trichloromethyl) s Triazine (trade name: TME Triazine, manufactured by Sanwa Chemical Co., Ltd.)
[0156] < (C)架橋剤(アルコキシアルキル化されたアミノ基を有する架橋剤)〉 <(C) Crosslinking agent (crosslinking agent having an alkoxyalkylated amino group)>
C—1:へキサメトキシメチルメラミン (サイテックインダストリーズ社製、商品名:サイメ ノレ 300) C— 2 :テトラメトキシメチルダルコールゥリル(サイテックインダストリーズ社製、商品 名:サイメノレ: 1174) C-1: Hexamethoxymethylmelamine (Cytech Industries, trade name: Saimenole 300) C-2: Tetramethoxymethyl dalcoluril (Cytech Industries, trade name: Saimenole: 1174)
[0157] < (D)化合物 > [0157] <(D) Compound>
D— 1:オルト蟻酸トリェチル  D—1: Triethyl orthoformate
D— 2 :オルト蟻酸トリメチル  D-2: Trimethyl orthoformate
D— 3:オルト蟻酸トリプロピル  D—3: Tripropyl orthoformate
[0158] <溶剤〉 [0158] <Solvent>
EL :乳酸ェチル  EL: Ethyl lactate
PGMEA:プロピレングリコールモノェチルエーテルァセテ一ト  PGMEA: Propylene glycol monoethyl ether acetate
[0159] [表 2] [0159] [Table 2]
Figure imgf000039_0001
Figure imgf000039_0001
解像度 粘度変化率 Resolution Viscosity change rate
混合性 塗布性  Mixability Applicability
( i m) 評価 (%)  (i m) Rating (%)
実施例 1 良好 良好 40 良好 0  Example 1 Good Good 40 Good 0
実施例 2 良好 良好 40 良好 0  Example 2 Good Good 40 Good 0
実施例 3 良好 良好 40 良好 0  Example 3 Good Good 40 Good 0
実施例 4 良好 良好 20 良好 0  Example 4 Good Good 20 Good 0
実施例 5 良好 良好 30 良好 0  Example 5 Good Good 30 Good 0
実施例 6 良好 良好 20 良好 0  Example 6 Good Good 20 Good 0
比較例 1 良好 良好 40 良好 8  Comparative Example 1 Good Good 40 Good 8
比較例 2 良好 良好 40 良好 5  Comparative Example 2 Good Good 40 Good 5
比較例 3 良好 良好 40 良好 6 産業上の利用可能性  Comparative Example 3 Good Good 40 Good 6 Industrial Applicability
本発明の感光性樹脂組成物は、表面保護膜、層間絶縁膜や高密度実装基板用絶 縁膜の用途に適し、産業上極めて有益である。  The photosensitive resin composition of the present invention is suitable for use as a surface protective film, an interlayer insulating film, and an insulating film for high-density mounting substrates, and is extremely useful in industry.

Claims

請求の範囲 [1] (A)ポリイミド樹脂、 (B)光酸発生剤、 (C)アルコキシアルキル化されたアミノ基を有する架橋剤、及び (D)下記一般式(1)で表される化合物、 を含有する感光性樹脂組成物。 [化 1] Claims [1] (A) a polyimide resin, (B) a photoacid generator, (C) a crosslinking agent having an alkoxyalkylated amino group, and (D) a compound represented by the following general formula (1) The photosensitive resin composition containing these. [Chemical 1]
(前記一般式(1)中、 R1は水素原子又は炭素数 1〜4のアルキル基を示し、 R\ R3 、及び R4は互いに独立して、炭素数;!〜 5のアルキル基を示す) (In the general formula (1), R 1 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R \ R 3 and R 4 independently of each other represent an alkyl group having! Show)
[2] 前記一般式(1)中の R1が、水素原子又はメチル基である請求項 1に記載の感光性 樹脂組成物。 [2] The photosensitive resin composition according to [1], wherein R 1 in the general formula (1) is a hydrogen atom or a methyl group.
[3] 前記 (D)化合物が、オルト蟻酸エステルである請求項 1又は 2に記載の感光性樹 脂組成物。  [3] The photosensitive resin composition according to claim 1 or 2, wherein the compound (D) is an orthoformate ester.
[4] フエノール性水酸基を有する樹脂を更に含有する請求項;!〜 3のいずれか一項に 記載の感光性樹脂組成物。  [4] The photosensitive resin composition according to any one of claims 1 to 3, further comprising a resin having a phenolic hydroxyl group.
[5] 前記 (A)ポリイミド樹脂力 アルカリ可溶性である請求項 1〜4の!/、ずれか一項に記 載の感光性樹脂組成物。  [5] The photosensitive resin composition according to [1] or [4], which is (A) polyimide resin strength alkali-soluble.
[6] 前記 (A)ポリイミド樹脂が、下記一般式 (2)で示される繰り返し単位を含む請求項 1 〜5のいずれか一項に記載の感光性樹脂組成物。  [6] The photosensitive resin composition according to any one of claims 1 to 5, wherein the (A) polyimide resin contains a repeating unit represented by the following general formula (2).
[化 2]  [Chemical 2]
Figure imgf000041_0002
Figure imgf000041_0002
(前記一般式 (2)中、 Xは 4価の芳香族又は脂肪族炭化水素基を示し、 Αは水酸基 を有する 2価の基を示す) (In the general formula (2), X represents a tetravalent aromatic or aliphatic hydrocarbon group, and Α represents a hydroxyl group. A divalent group having
[7] 前記一般式(2)中の Xが、 4価の脂肪族炭化水素基である請求項 6に記載の感光 性樹脂組成物。 7. The photosensitive resin composition according to claim 6, wherein X in the general formula (2) is a tetravalent aliphatic hydrocarbon group.
[8] 前記一般式(2)中の Aが、下記一般式(3)で示される基である請求項 6又は 7に記 載の感光性樹脂組成物。  [8] The photosensitive resin composition according to claim 6 or 7, wherein A in the general formula (2) is a group represented by the following general formula (3).
[化 3]
Figure imgf000042_0001
[Chemical 3]
Figure imgf000042_0001
(前記一般式(3)中、 R5は単結合、酸素原子、硫黄原子、スルホン基、カルボ二ノレ 基、メチレン基、ジメチルメチレン基、及びビス(トリフルォロメチル)メチレン基からなる 群より選択される少なくとも一種の基を示し、 R6は互いに独立して、水素原子、ァシル 基、又はアルキル基を示し、 n1及び n2は 0〜4の整数を示し、 n1と n2の少なくとも一方 は 1以上であり、 R6の少なくとも一つは水素原子である) (In the general formula (3), R 5 is selected from the group consisting of a single bond, an oxygen atom, a sulfur atom, a sulfone group, a carboninole group, a methylene group, a dimethylmethylene group, and a bis (trifluoromethyl) methylene group. At least one group selected, R 6 independently of each other represents a hydrogen atom, an acyl group or an alkyl group, n 1 and n 2 represent an integer of 0 to 4, and n 1 and n 2 At least one is 1 or more and at least one of R 6 is a hydrogen atom)
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