WO2008028852A3 - Doped bi-te compounds for thermoelectric generators and peltier arrangements - Google Patents

Doped bi-te compounds for thermoelectric generators and peltier arrangements Download PDF

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Publication number
WO2008028852A3
WO2008028852A3 PCT/EP2007/059007 EP2007059007W WO2008028852A3 WO 2008028852 A3 WO2008028852 A3 WO 2008028852A3 EP 2007059007 W EP2007059007 W EP 2007059007W WO 2008028852 A3 WO2008028852 A3 WO 2008028852A3
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WIPO (PCT)
Prior art keywords
doped
compounds
thermoelectric generators
peltier arrangements
peltier
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PCT/EP2007/059007
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German (de)
French (fr)
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WO2008028852A2 (en
Inventor
Hans-Josef Sterzel
Frank Haass
Patrick Deck
Original Assignee
Basf Se
Hans-Josef Sterzel
Frank Haass
Patrick Deck
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Application filed by Basf Se, Hans-Josef Sterzel, Frank Haass, Patrick Deck filed Critical Basf Se
Publication of WO2008028852A2 publication Critical patent/WO2008028852A2/en
Publication of WO2008028852A3 publication Critical patent/WO2008028852A3/en

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    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/547Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/653Processes involving a melting step
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/852Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
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    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • C01P2002/50Solid solutions
    • C01P2002/52Solid solutions containing elements as dopants
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    • C04B2235/3294Antimony oxides, antimonates, antimonites or oxide forming salts thereof, indium antimonate
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    • C04B2235/3298Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
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Abstract

A p-conductive or n-conductive semiconductor material contains a Ge-, Co-, Fe- and/or Ni-doped bismuth telluride of the general formula (I) or (II) Bi2-xDopuSeyTez (I) with the meaning Dop = Ge, Co, Fe, Ni or mixtures thereof u, x = independently of one another 0.001 to 0.06 y = 0.01 to 1.0 y+z = 3.00 to 3.2 Bi2-xSb yDopuSezTev (II) with the meaning Dop = Ge, Co, Fe, Ni or mixtures thereof u, x = independently of one another 0.001 to 0.4 y = 0 to 1 z = 0 to 1 z+v = 3.00 to 3.3.
PCT/EP2007/059007 2006-09-05 2007-08-29 Doped bi-te compounds for thermoelectric generators and peltier arrangements WO2008028852A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06120106 2006-09-05
EP06120106.7 2006-09-05

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WO2008028852A2 WO2008028852A2 (en) 2008-03-13
WO2008028852A3 true WO2008028852A3 (en) 2008-11-27

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WO (1) WO2008028852A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103400932B (en) * 2008-08-29 2016-08-10 Lg化学株式会社 Novel thermo-electric converting material and preparation method thereof, and use the thermoelectric conversion element of this novel thermo-electric converting material
KR20210110725A (en) * 2019-01-18 2021-09-08 엘지전자 주식회사 Thermoelectric material and its manufacturing method
CN115368136B (en) * 2022-08-26 2023-07-14 武汉理工大学 Be applicable to batch preparation polycrystal Bi 2 Te 3 Method for preparing thermoelectric material of base body

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726381A (en) * 1994-10-11 1998-03-10 Yamaha Corporation Amorphous thermoelectric alloys and thermoelectric couple using same
JP2004235278A (en) * 2003-01-28 2004-08-19 Yamaha Corp Thermoelectric material and its manufacturing method
WO2005114756A2 (en) * 2004-05-18 2005-12-01 Basf Aktiengesellschaft Antimonides with novel combinations of properties

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726381A (en) * 1994-10-11 1998-03-10 Yamaha Corporation Amorphous thermoelectric alloys and thermoelectric couple using same
JP2004235278A (en) * 2003-01-28 2004-08-19 Yamaha Corp Thermoelectric material and its manufacturing method
WO2005114756A2 (en) * 2004-05-18 2005-12-01 Basf Aktiengesellschaft Antimonides with novel combinations of properties

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
APPLIED SOLAR ENERGY USA, vol. 28, no. 3, 1993, pages 10 - 11, ISSN: 0003-701X *
APPLIED SOLAR ENERGY USA, vol. 29, no. 3, 1993, pages 88 - 90, ISSN: 0003-701X *
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; ALIDZHANOV, M. A. ET AL: "Preparation and physicomechanical properties of alloys based on the compound Bi2Te3", XP002495654, retrieved from STN Database accession no. 145:114491 *
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; SVECHNIKOVA, T.E. ET AL: "Thermoelectric properties of doped single crystal solid solutions based on bismuth telluride", XP002495653, retrieved from STN Database accession no. 127:116144 *
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; 1992, AGZAMOVA M K ET AL: "Thermoelectric properties of sintered powders of bismuth and antimony tellurides with additions of iron", XP002495656, Database accession no. 4388235 *
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; 1993, AGZAMOVA M KH ET AL: "Investigations of thermal electromotive forces for moulded powders of bismuth and antimony tellurides with admixtures of ferrum and boron", XP002495655, Database accession no. 4608311 *
MARUZALAR - AZARBAYCAN MILLI ELMLAR AKADEMIYASI , 60(3-4), 93-96 CODEN: MAMEC4, 2004 *
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON THERMOELECTRICS , 14TH, 10-12 CODEN: PICTEM; ISSN: 1078-9642, 1995 *

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TW200822404A (en) 2008-05-16

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