WO2008028852A3 - Doped bi-te compounds for thermoelectric generators and peltier arrangements - Google Patents
Doped bi-te compounds for thermoelectric generators and peltier arrangements Download PDFInfo
- Publication number
- WO2008028852A3 WO2008028852A3 PCT/EP2007/059007 EP2007059007W WO2008028852A3 WO 2008028852 A3 WO2008028852 A3 WO 2008028852A3 EP 2007059007 W EP2007059007 W EP 2007059007W WO 2008028852 A3 WO2008028852 A3 WO 2008028852A3
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- WO
- WIPO (PCT)
- Prior art keywords
- doped
- compounds
- thermoelectric generators
- peltier arrangements
- peltier
- Prior art date
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- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/547—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/653—Processes involving a melting step
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
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- C01P2002/52—Solid solutions containing elements as dopants
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3294—Antimony oxides, antimonates, antimonites or oxide forming salts thereof, indium antimonate
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
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Abstract
A p-conductive or n-conductive semiconductor material contains a Ge-, Co-, Fe- and/or Ni-doped bismuth telluride of the general formula (I) or (II) Bi2-xDopuSeyTez (I) with the meaning Dop = Ge, Co, Fe, Ni or mixtures thereof u, x = independently of one another 0.001 to 0.06 y = 0.01 to 1.0 y+z = 3.00 to 3.2 Bi2-xSb yDopuSezTev (II) with the meaning Dop = Ge, Co, Fe, Ni or mixtures thereof u, x = independently of one another 0.001 to 0.4 y = 0 to 1 z = 0 to 1 z+v = 3.00 to 3.3.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06120106 | 2006-09-05 | ||
EP06120106.7 | 2006-09-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008028852A2 WO2008028852A2 (en) | 2008-03-13 |
WO2008028852A3 true WO2008028852A3 (en) | 2008-11-27 |
Family
ID=38694810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2007/059007 WO2008028852A2 (en) | 2006-09-05 | 2007-08-29 | Doped bi-te compounds for thermoelectric generators and peltier arrangements |
Country Status (2)
Country | Link |
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TW (1) | TW200822404A (en) |
WO (1) | WO2008028852A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103400932B (en) * | 2008-08-29 | 2016-08-10 | Lg化学株式会社 | Novel thermo-electric converting material and preparation method thereof, and use the thermoelectric conversion element of this novel thermo-electric converting material |
KR20210110725A (en) * | 2019-01-18 | 2021-09-08 | 엘지전자 주식회사 | Thermoelectric material and its manufacturing method |
CN115368136B (en) * | 2022-08-26 | 2023-07-14 | 武汉理工大学 | Be applicable to batch preparation polycrystal Bi 2 Te 3 Method for preparing thermoelectric material of base body |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5726381A (en) * | 1994-10-11 | 1998-03-10 | Yamaha Corporation | Amorphous thermoelectric alloys and thermoelectric couple using same |
JP2004235278A (en) * | 2003-01-28 | 2004-08-19 | Yamaha Corp | Thermoelectric material and its manufacturing method |
WO2005114756A2 (en) * | 2004-05-18 | 2005-12-01 | Basf Aktiengesellschaft | Antimonides with novel combinations of properties |
-
2007
- 2007-08-29 WO PCT/EP2007/059007 patent/WO2008028852A2/en active Application Filing
- 2007-09-05 TW TW096133075A patent/TW200822404A/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5726381A (en) * | 1994-10-11 | 1998-03-10 | Yamaha Corporation | Amorphous thermoelectric alloys and thermoelectric couple using same |
JP2004235278A (en) * | 2003-01-28 | 2004-08-19 | Yamaha Corp | Thermoelectric material and its manufacturing method |
WO2005114756A2 (en) * | 2004-05-18 | 2005-12-01 | Basf Aktiengesellschaft | Antimonides with novel combinations of properties |
Non-Patent Citations (8)
Title |
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APPLIED SOLAR ENERGY USA, vol. 28, no. 3, 1993, pages 10 - 11, ISSN: 0003-701X * |
APPLIED SOLAR ENERGY USA, vol. 29, no. 3, 1993, pages 88 - 90, ISSN: 0003-701X * |
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; ALIDZHANOV, M. A. ET AL: "Preparation and physicomechanical properties of alloys based on the compound Bi2Te3", XP002495654, retrieved from STN Database accession no. 145:114491 * |
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; SVECHNIKOVA, T.E. ET AL: "Thermoelectric properties of doped single crystal solid solutions based on bismuth telluride", XP002495653, retrieved from STN Database accession no. 127:116144 * |
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; 1992, AGZAMOVA M K ET AL: "Thermoelectric properties of sintered powders of bismuth and antimony tellurides with additions of iron", XP002495656, Database accession no. 4388235 * |
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; 1993, AGZAMOVA M KH ET AL: "Investigations of thermal electromotive forces for moulded powders of bismuth and antimony tellurides with admixtures of ferrum and boron", XP002495655, Database accession no. 4608311 * |
MARUZALAR - AZARBAYCAN MILLI ELMLAR AKADEMIYASI , 60(3-4), 93-96 CODEN: MAMEC4, 2004 * |
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON THERMOELECTRICS , 14TH, 10-12 CODEN: PICTEM; ISSN: 1078-9642, 1995 * |
Also Published As
Publication number | Publication date |
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WO2008028852A2 (en) | 2008-03-13 |
TW200822404A (en) | 2008-05-16 |
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