WO2005114755A3 - Tellurides having novel property combinations - Google Patents

Tellurides having novel property combinations Download PDF

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Publication number
WO2005114755A3
WO2005114755A3 PCT/EP2005/005345 EP2005005345W WO2005114755A3 WO 2005114755 A3 WO2005114755 A3 WO 2005114755A3 EP 2005005345 W EP2005005345 W EP 2005005345W WO 2005114755 A3 WO2005114755 A3 WO 2005114755A3
Authority
WO
WIPO (PCT)
Prior art keywords
tellurides
property combinations
novel property
telluride
generators
Prior art date
Application number
PCT/EP2005/005345
Other languages
German (de)
French (fr)
Other versions
WO2005114755A2 (en
Inventor
Hans-Josef Sterzel
Klaus Kuehling
Original Assignee
Basf Ag
Hans-Josef Sterzel
Klaus Kuehling
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Ag, Hans-Josef Sterzel, Klaus Kuehling filed Critical Basf Ag
Publication of WO2005114755A2 publication Critical patent/WO2005114755A2/en
Publication of WO2005114755A3 publication Critical patent/WO2005114755A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to thermoelectric generators or Peltier arrays which comprise a telluride as the thermoelectrically active semiconducting element. The inventive generators or Peltier arrays are characterized in that the positively polarized atoms of the crystal lattice of the telluride are partially replaced by silicon and/or germanium.
PCT/EP2005/005345 2004-05-18 2005-05-17 Tellurides having novel property combinations WO2005114755A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004025066.9 2004-05-18
DE102004025066A DE102004025066A1 (en) 2004-05-18 2004-05-18 Telluride with new property combinations

Publications (2)

Publication Number Publication Date
WO2005114755A2 WO2005114755A2 (en) 2005-12-01
WO2005114755A3 true WO2005114755A3 (en) 2006-05-11

Family

ID=34969830

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/005345 WO2005114755A2 (en) 2004-05-18 2005-05-17 Tellurides having novel property combinations

Country Status (3)

Country Link
DE (1) DE102004025066A1 (en)
TW (1) TW200602259A (en)
WO (1) WO2005114755A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005008865A1 (en) * 2005-02-24 2006-08-31 Basf Ag Modified bismuth sulfide composition, useful in semiconductor material, which is used in e.g. thermoelectric modules and photovoltaic cells is new
WO2007104603A2 (en) * 2006-03-16 2007-09-20 Basf Se Lead-germanium-tellurides for thermoelectrical applications
US8716589B2 (en) 2006-03-16 2014-05-06 Basf Aktiengesellschaft Doped lead tellurides for thermoelectric applications
CN115368136B (en) * 2022-08-26 2023-07-14 武汉理工大学 Be applicable to batch preparation polycrystal Bi 2 Te 3 Method for preparing thermoelectric material of base body

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3224876A (en) * 1963-02-04 1965-12-21 Minnesota Mining & Mfg Thermoelectric alloy
US3969743A (en) * 1975-04-23 1976-07-13 Aeronutronic Ford Corporation Protective coating for IV-VI compound semiconductor devices
EP0115950A2 (en) * 1983-01-31 1984-08-15 Energy Conversion Devices, Inc. New powder pressed N-type thermoelectric materials and method of making same
JPS60221309A (en) * 1984-04-18 1985-11-06 Japan Spectroscopic Co Manufacture of pbte
GB2259098A (en) * 1991-08-30 1993-03-03 Univ Cardiff Electrochemical preparation of single phase lead telluride
EP1342828A2 (en) * 2002-02-21 2003-09-10 Theodor Blum Laundry drier
WO2004090998A2 (en) * 2003-04-11 2004-10-21 Basf Aktiengesellschaft Pb-ge-te-compounds for thermoelectric generators or peltier arrangements

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3224876A (en) * 1963-02-04 1965-12-21 Minnesota Mining & Mfg Thermoelectric alloy
US3969743A (en) * 1975-04-23 1976-07-13 Aeronutronic Ford Corporation Protective coating for IV-VI compound semiconductor devices
EP0115950A2 (en) * 1983-01-31 1984-08-15 Energy Conversion Devices, Inc. New powder pressed N-type thermoelectric materials and method of making same
JPS60221309A (en) * 1984-04-18 1985-11-06 Japan Spectroscopic Co Manufacture of pbte
GB2259098A (en) * 1991-08-30 1993-03-03 Univ Cardiff Electrochemical preparation of single phase lead telluride
EP1342828A2 (en) * 2002-02-21 2003-09-10 Theodor Blum Laundry drier
WO2004090998A2 (en) * 2003-04-11 2004-10-21 Basf Aktiengesellschaft Pb-ge-te-compounds for thermoelectric generators or peltier arrangements

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
CHOI J-S ET AL: "Thermoelectric properties of n-type (Pb1-xGex)Te fabricated by hot pressing method", THERMOELECTRICS, 1997. PROCEEDINGS ICT '97. XVI INTERNATIONAL CONFERENCE ON DRESDEN, GERMANY 26-29 AUG. 1997, NEW YORK, NY, USA,IEEE, US, 26 August 1997 (1997-08-26), pages 228 - 231, XP002296046, ISBN: 0-7803-4057-4 *
KOHRI H ET AL: "IMPROVEMENT OF THERMOELECTRIC PROPERTIES FOR N-TYPE PBTE BY ADDING GE", MATERIALS SCIENCE FORUM, AEDERMANNSFDORF, CH, vol. 423-425, 2003, pages 381 - 384, XP008035344, ISSN: 0255-5476 *
NIKOLIC, P.M.: "Solid solution of lead-germanium chalcogenide alloys and some of their optical properties", J. APPL. PHYS. D: APPL. PHYS., vol. 2, March 1969 (1969-03-01), Great Britain, pages 383 - 388, XP002371551 *
PATENT ABSTRACTS OF JAPAN vol. 010, no. 090 (C - 337) 8 April 1986 (1986-04-08) *
YASHINA L V ET AL: "Germanium diffusion in lead telluride crystal", SOLID STATE IONICS, NORTH HOLLAND PUB. COMPANY. AMSTERDAM, NL, vol. 101-103, November 1997 (1997-11-01), pages 533 - 538, XP004382576, ISSN: 0167-2738 *

Also Published As

Publication number Publication date
TW200602259A (en) 2006-01-16
DE102004025066A1 (en) 2005-12-08
WO2005114755A2 (en) 2005-12-01

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