WO2008025353A3 - Vorrichtung und verfahren zur ausbildung dünner siliciumnitridschichten auf oberflächen von kristallinen silicium-solarwafern - Google Patents

Vorrichtung und verfahren zur ausbildung dünner siliciumnitridschichten auf oberflächen von kristallinen silicium-solarwafern Download PDF

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Publication number
WO2008025353A3
WO2008025353A3 PCT/DE2007/001580 DE2007001580W WO2008025353A3 WO 2008025353 A3 WO2008025353 A3 WO 2008025353A3 DE 2007001580 W DE2007001580 W DE 2007001580W WO 2008025353 A3 WO2008025353 A3 WO 2008025353A3
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WO
WIPO (PCT)
Prior art keywords
silicon solar
nitride layers
silicon nitride
electromagnetic radiation
crystalline silicon
Prior art date
Application number
PCT/DE2007/001580
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English (en)
French (fr)
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WO2008025353A2 (de
Inventor
Birte Dresler
Volkmar Hopfe
Ines Dani
Rainer Moeller
Milan Rosina
Original Assignee
Fraunhofer Ges Forschung
Birte Dresler
Volkmar Hopfe
Ines Dani
Rainer Moeller
Milan Rosina
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Ges Forschung, Birte Dresler, Volkmar Hopfe, Ines Dani, Rainer Moeller, Milan Rosina filed Critical Fraunhofer Ges Forschung
Priority to EP07801317A priority Critical patent/EP2061915A2/de
Publication of WO2008025353A2 publication Critical patent/WO2008025353A2/de
Publication of WO2008025353A3 publication Critical patent/WO2008025353A3/de

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Die Erfindung betrifft eine Vorrichtung und ein Verfahren zur Ausbildung dünner Siliciumnitridschichten auf Oberflächen von kristallinen Silicium-Solarwafern. Es ist Aufgabe der Erfindung Möglichkeiten zur Verfügung zu stellen, mit denen dünne Siliciumnitridschichten auf Oberflächen von kristallinen Silicium-Solarwafern hergestellt werden können, die eine bestimmte Schichtwerkstoffausbildung mit gewünschten Eigenschaften aufweisen. Die erfindungsgemäße Vorrichtung ist dabei so ausgebildet, dass an einem Reaktionskammerbereich oberhalb einer zu beschichtenden Silicium-Solarwaferoberfläche eine Zuführung für mindestens einen gasförmigen Silicium enthaltenden Precursor vorhanden ist, der zur Schichtbildung beiträgt. Außerdem ist eine elektromagnetische Strahlung emittierende Quelle, die eine Plasmaquelle ist, so angeordnet, dass mit der emittierten elektromagnetischen Strahlung eine photolytische Aktivierung von Atomen und/oder Molekülen des/der Precursor (en) erfolgt. Die Plasmaquelle sollte dabei so angeordnet sein und soll auch so betrieben werden, dass kein unmittelbarer Einfluss des Plasmas auf die Silicium-Solarwaferoberfläche und die zur Schichtausbildung führenden Precursoren auftritt und ausschließlich die emittierte elektromagnetische Strahlung wirkt.
PCT/DE2007/001580 2006-09-01 2007-08-29 Vorrichtung und verfahren zur ausbildung dünner siliciumnitridschichten auf oberflächen von kristallinen silicium-solarwafern WO2008025353A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07801317A EP2061915A2 (de) 2006-09-01 2007-08-29 Vorrichtung und verfahren zur ausbildung dünner siliciumnitridschichten auf oberflächen von kristallinen silicium-solarwafern

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200610042327 DE102006042327B4 (de) 2006-09-01 2006-09-01 Vorrichtung und Verfahren zur Ausbildung dünner Siliciumnitridschichten auf Oberflächen von kristallinen Silicium-Solarwafern
DE102006042327.5 2006-09-01

Publications (2)

Publication Number Publication Date
WO2008025353A2 WO2008025353A2 (de) 2008-03-06
WO2008025353A3 true WO2008025353A3 (de) 2008-05-08

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PCT/DE2007/001580 WO2008025353A2 (de) 2006-09-01 2007-08-29 Vorrichtung und verfahren zur ausbildung dünner siliciumnitridschichten auf oberflächen von kristallinen silicium-solarwafern

Country Status (3)

Country Link
EP (1) EP2061915A2 (de)
DE (1) DE102006042327B4 (de)
WO (1) WO2008025353A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009024319B4 (de) * 2009-06-02 2014-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur photoinduzierten Aushärtung mittels elektromagnetischer Strahlung aushärtbarer Polymere

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578130A (en) * 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
WO1999020809A1 (en) * 1997-10-20 1999-04-29 The Regents Of The University Of California Deposition of coatings using an atmospheric pressure plasma jet
DE19958474A1 (de) * 1999-12-04 2001-06-21 Bosch Gmbh Robert Verfahren zur Erzeugung von Funktionsschichten mit einer Plasmastrahlquelle
EP1394283A1 (de) * 2002-08-29 2004-03-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur grossflächigen Beschichtung von Substraten bei Atmosphärendruckbedingungen
DE102004015217A1 (de) * 2004-03-23 2006-01-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Ausbildung dünner Schichten aus Siliziumnitrid auf Substratoberflächen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222534A (ja) * 1985-03-28 1986-10-03 Anelva Corp 表面処理方法および装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578130A (en) * 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
WO1999020809A1 (en) * 1997-10-20 1999-04-29 The Regents Of The University Of California Deposition of coatings using an atmospheric pressure plasma jet
DE19958474A1 (de) * 1999-12-04 2001-06-21 Bosch Gmbh Robert Verfahren zur Erzeugung von Funktionsschichten mit einer Plasmastrahlquelle
EP1394283A1 (de) * 2002-08-29 2004-03-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur grossflächigen Beschichtung von Substraten bei Atmosphärendruckbedingungen
DE102004015217A1 (de) * 2004-03-23 2006-01-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Ausbildung dünner Schichten aus Siliziumnitrid auf Substratoberflächen

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FAINER N I ET AL: "The investigation of properties of silicon nitride films obtained by RPECVD from hexamethyldisilazane", 1 July 1996, APPLIED SURFACE SCIENCE, ELSEVIER, AMSTERDAM, NL, PAGE(S) 614-617, ISSN: 0169-4332, XP002341095 *
NOWLING G R ET AL: "Remote plasma-enhanced chemical vapour deposition of silicon nitride at atmospheric pressure", 4 February 2002, PLASMA SOURCES SCIENCE AND TECHNOLOGY, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, PAGE(S) 97-103, ISSN: 0963-0252, XP020069930 *

Also Published As

Publication number Publication date
EP2061915A2 (de) 2009-05-27
WO2008025353A2 (de) 2008-03-06
DE102006042327B4 (de) 2009-10-22
DE102006042327A1 (de) 2008-03-20

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