WO2008018425A1 - Liquid surface sensor - Google Patents

Liquid surface sensor Download PDF

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Publication number
WO2008018425A1
WO2008018425A1 PCT/JP2007/065394 JP2007065394W WO2008018425A1 WO 2008018425 A1 WO2008018425 A1 WO 2008018425A1 JP 2007065394 W JP2007065394 W JP 2007065394W WO 2008018425 A1 WO2008018425 A1 WO 2008018425A1
Authority
WO
WIPO (PCT)
Prior art keywords
liquid level
resistance layer
temperature detection
level detection
liquid
Prior art date
Application number
PCT/JP2007/065394
Other languages
French (fr)
Japanese (ja)
Inventor
Yoshinori Takashima
Mikihiro Ohshima
Motoki Ogata
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006218064A external-priority patent/JP2008039727A/en
Priority claimed from JP2006218063A external-priority patent/JP2008039726A/en
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Publication of WO2008018425A1 publication Critical patent/WO2008018425A1/en

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01FMEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F23/00Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
    • G01F23/22Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water
    • G01F23/24Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring variations of resistance of resistors due to contact with conductor fluid
    • G01F23/246Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring variations of resistance of resistors due to contact with conductor fluid thermal devices

Definitions

  • the present invention particularly relates to a liquid level detection sensor that detects the liquid level of a water tank.
  • This type of conventional liquid level detection sensor has a configuration as shown in FIGS.
  • FIG. 12 is a front view of a conventional liquid level detection sensor.
  • FIG. 13 is a side sectional view of a conventional liquid level detection sensor.
  • the insulating substrate 1 is a rectangular parallelepiped substrate made of polyethylene terephthalate configured in a film shape.
  • the insulating substrate 1 is erected almost vertically in the longitudinal direction, and an insulating layer 2 made of an epoxy resin is provided on one side surface.
  • a heater layer 3 made of a mixture of silver (Ag) resin and epoxy resin is provided between the insulating substrate 1 and the insulating layer 2.
  • a liquid level detecting resistance layer 4 composed of a thermistor having a resin material made of a mixture of Ag-based resin and epoxy-based resin as a binder from above to below in the longitudinal direction. Is provided.
  • a pair of liquid level detection electrodes 5 are provided on both ends of the liquid level detection resistance layer 4 in the direction perpendicular to the longitudinal direction. The liquid level detection electrodes 5 are connected to the external electrodes 7 via the wiring pattern 6. Electrically connected.
  • a gas temperature detecting resistance layer 8 which is located above and is composed of a thermistor having a resin material made of a mixture of Ag-based resin and epoxy-based resin as a binder.
  • a gas temperature detection electrode 9 made of a pair of Ag is provided at both ends of the gas temperature detection resistance layer 8, and the gas temperature detection electrode 9 is electrically connected to the external electrode 7 through the wiring pattern 6. is doing.
  • a liquid temperature detecting resistance layer 10 is formed which is located below and is composed of a thermistor using a mixture of Ag-based resin and epoxy-based resin as a binder.
  • a liquid temperature detection electrode 11 made of a pair of Ag is provided at both ends of the liquid temperature detection resistance layer 10, and the liquid temperature detection electrode 11 is electrically connected to the external electrode 7 through the wiring pattern 6. Connected to.
  • a pair of gas temperature detectors The length between the poles 9 and the length between the pair of liquid temperature detection electrodes 11 are substantially the same, and this length is defined as a unit length.
  • the adhesive layer 12 is made of Si or acrylic. This adhesive layer 12 is a side surface of the insulating substrate 1, the liquid level detection resistance layer 4, the liquid level detection electrode 5, the gas temperature detection resistance layer 8, the gas temperature detection electrode 9, the liquid temperature detection resistance layer 10, and the liquid temperature detection electrode 11. Is provided.
  • FIG. 14 is a side sectional view showing a state in which a conventional liquid level detection sensor operates.
  • the liquid level detection sensor is first attached to the outer surface of the drip container 13 filled with the drip solution 14.
  • the gas temperature detection resistance layer 8 (not shown) faces the gas in the drip container 13.
  • the liquid temperature detection resistance layer 10 faces the liquid in the drip container 13.
  • the liquid level detection resistance layer 4 is attached to the outer surface of the drip container 13.
  • Patent Document 1 is known as prior art document information relating to the invention of this application.
  • the insulating layer 2, the liquid level detection resistance layer 4, the liquid level detection electrode 5, and the liquid temperature detection are provided between the drip container 13 for detecting the liquid level and the heater layer 3. Since the resistance layer 10, the liquid temperature detection electrode 11, the gas temperature detection resistance layer 8, the gas temperature detection electrode 9 and the adhesive layer 12 are provided, the distance between the drip container 13 and the heater layer 3 is increased. This Therefore, it takes time until Joule heat generated from the heater layer 3 is cooled by the drip liquid 14 filled in the drip container 13. Therefore, if the liquid level of the drip solution 14 in the drip container 13 changes suddenly, measurement of the liquid level cannot be performed instantaneously, and the time response of the liquid level detection sensor is good.
  • the liquid level detection resistance layer 4 is provided from the upper side to the lower side of the insulating substrate 1, the cross-sectional area thereof is provided only above or below the insulating substrate 1. Larger than the cross-sectional area of the resistance layer 8 and the liquid temperature detection resistance layer 10. In this case, when the resistance value of the liquid level detection resistance layer 4 is compared with the resistance values of the gas temperature detection resistance layer 8 and the liquid temperature detection resistance layer 10, the resistance of the liquid level detection resistance layer 4 is calculated. The output signal due to the resistance value must be amplified more than the output signal due to the resistance value of the gas temperature detection resistance layer 8 and the liquid temperature detection resistance layer 10. Therefore, the output signal generated in the liquid level detection resistance layer 4 becomes unstable.
  • Patent Document 1 Japanese Unexamined Patent Application Publication No. 2006-90714
  • the present invention provides a liquid level detection sensor that can measure the liquid level instantaneously and has good temporal response even when the liquid level of the solution to be measured changes abruptly.
  • the output signal generated in the liquid level detection resistance layer is not amplified more greatly than the output signal due to the resistance value of the gas temperature detection resistance layer and the liquid temperature detection resistance layer.
  • a liquid level detection sensor that is detected in a stable state.
  • the liquid level detection sensor includes an insulating substrate standing in the longitudinal direction, a liquid level detection resistance layer provided on one side in the longitudinal direction of the insulating substrate from above to below.
  • a pair of liquid level detection electrodes provided at both ends of the liquid level detection resistance layer, a gas temperature detection resistance layer provided above one side surface of the insulating substrate, and both ends of the gas temperature detection resistance layer
  • a pair of gas temperature detection electrodes provided, a liquid temperature detection resistance layer provided below one side of the insulating substrate, and a pair of liquid temperature detection electrodes provided at both ends of the liquid temperature detection resistance layer
  • a heater layer for supplying heat to the liquid level detection resistance layer, the gas temperature detection resistance layer, and the liquid temperature detection resistance layer, the liquid level detection resistance layer, the liquid level detection electrode, the gas temperature detection resistance layer, and the gas temperature detection electrode.
  • Liquid temperature detection resistance layer Liquid temperature detection current
  • a protective layer provided to cover the electrode and the heater layer.
  • a heater layer is provided between the liquid level detection resistance layer, the liquid temperature
  • the heater layer is provided between the liquid level detection resistance layer, the liquid temperature detection resistance layer, the base temperature detection resistance layer, and the protective layer.
  • the distance is reduced, so that the Joule heat generated from the heater layer is immediately cooled by the solution to be measured. Therefore, even when the liquid level of the solution to be measured changes suddenly, the liquid level detection can be performed instantaneously, and it is possible to provide a liquid level detection sensor with good temporal response.
  • the liquid level detection sensor includes a liquid level detection resistance layer including a plurality of parallel resistance layers electrically connected in parallel to a pair of liquid level detection electrodes.
  • the parallel resistance layer is installed at the same angle with respect to the vertical.
  • FIG. 1 is a side sectional view of a liquid level detection sensor according to Embodiment 1 of the present invention.
  • FIG. 2 is a front view showing a state before the insulating substrate is bent in the liquid level detection sensor according to Embodiment 1 of the present invention.
  • FIG. 3 is a side sectional view showing a state before the insulating substrate is bent in the liquid level detection sensor according to Embodiment 1 of the present invention.
  • FIG. 4 is a front view showing a state in which an insulating substrate force protection layer and a heater layer are removed from the liquid level detection sensor according to Embodiment 1 of the present invention.
  • FIG. 5 is a side sectional view showing a state in which the liquid level detection sensor according to Embodiment 1 of the present invention operates.
  • FIG. 6 is a side sectional view of a liquid level detection sensor according to Embodiment 2 of the present invention.
  • FIG. 7 is a front view of an insulating substrate in the liquid level detection sensor according to Embodiment 2 of the present invention.
  • FIG. 8 is a side cross-sectional view of the insulating substrate in the liquid level detection sensor according to Embodiment 2 of the present invention.
  • FIG. 9 is a front view showing a state in which the protective layer and the heater layer made of the insulating substrate of the liquid level detection sensor according to Embodiment 2 of the present invention are removed.
  • FIG. 10 is a side sectional view showing a state in which the liquid level detection sensor according to Embodiment 2 of the present invention operates.
  • FIG. 11 is a circuit diagram of a liquid level detection sensor according to Embodiment 2 of the present invention.
  • FIG. 12 is a front view of a conventional liquid level detection sensor.
  • FIG. 13 is a side sectional view of a conventional liquid level detection sensor.
  • FIG. 14 is a side sectional view showing a state in which a conventional liquid level detection sensor operates. Explanation of symbols
  • FIG. 1 is a side sectional view of a liquid level detection sensor according to Embodiment 1 of the present invention.
  • FIG. 2 is a front view of the liquid level detection sensor according to Embodiment 1 of the present invention before the insulating substrate is bent.
  • FIG. 3 is a side sectional view of the liquid level detection sensor according to Embodiment 1 of the present invention in a state before the insulating substrate is bent.
  • FIG. 4 is a front view showing a state in which the protective layer and the heater layer are removed from the insulating substrate of the liquid level detection sensor according to Embodiment 1 of the present invention.
  • an insulating substrate 21 is a rectangular parallelepiped substrate made of polyethylene terephthalate configured in a film shape.
  • the insulating substrate 21 is erected substantially perpendicularly to the longitudinal direction, and as shown in FIG. 1, a bent portion 22 bent at a substantially right angle is provided at the lower end.
  • the insulating substrate 21 is provided with a liquid level detection electrode 23 made of a pair of Ag from the upper part to the lower part of one side surface in the longitudinal direction.
  • the liquid level detection electrode 23 is provided with a liquid level detection resistance layer 24 so that both ends thereof are electrically connected to the liquid level detection electrode 23.
  • the liquid level detection resistance layer 24 is composed of a thermistor having a resin material made of a mixture of an Ag-based resin and an epoxy-based resin as a binder.
  • a gas temperature detection electrode 25 comprising a pair of Ag forces is provided above the pair of liquid level detection electrodes 23.
  • a gas temperature detection resistance layer 26 is provided so that both ends of the gas temperature detection electrode 25 are electrically connected.
  • This gas temperature detection resistance layer 26 is composed of a thermistor using a resin material made of a mixture of an Ag-based resin and an epoxy-based resin as a binder.
  • the bent portion 22 of the insulating substrate 21 is provided with a liquid temperature detection electrode 27 made of a pair of Ag.
  • a liquid temperature detection resistance layer 28 having a thermistor force using a resin material made of a mixture of an Ag-based resin and an epoxy-based resin as a binder is provided so that both ends of the liquid temperature detection electrode 27 are electrically connected.
  • the length between the pair of gas temperature detection electrodes 25 and the length between the pair of liquid temperature detection electrodes 27 are substantially the same. Is defined as a unit length.
  • the liquid temperature detection electrode 27 and the liquid temperature detection resistance layer 28 on the insulating substrate 21 are configured to have substantially the same height by being provided at the bent portion 22 provided at the lower end of the insulating substrate 21.
  • the liquid level detection electrode 23, the gas temperature detection electrode 25, and the liquid temperature detection electrode 27 are electrically connected to the external electrode 30 through a wiring pattern 29 provided on one side surface of the insulating substrate 21.
  • the insulating layer 31 includes a liquid level detection electrode 23, a liquid level detection resistance layer 24, a gas temperature detection electrode 25, a gas temperature detection resistance layer 26, a liquid temperature detection electrode 27, and a liquid temperature detection electrode 27 provided on the upper surface of the insulating substrate 21. And the liquid temperature detection resistance layer 28 is provided.
  • the heater layer 32 is provided so as to meander the upper surface of the insulating layer 31 and is electrically connected to the heater electrode 34 via the circuit pattern 33.
  • the protective layer 35 is provided so as to cover the upper surface of the heater layer 32.
  • the case 36 is made of metal and accommodates the insulating substrate 21 inside.
  • a contact member 37 is attached to the bottom surface of the case 36 and holds a bent portion 22 provided at the lower end of the insulating substrate 21.
  • the liquid temperature detection resistance layer 28 and the liquid temperature detection electrode 27 are configured to have substantially the same height. Therefore, the liquid temperature detection resistance layer 28 and the liquid temperature detection electrode 27 can be provided on the inner bottom surface of the case 36. As a result, if the solution to be measured (not shown) fills the case 36 even a little, the liquid temperature detection resistance layer 28 and the liquid temperature detection electrode 27 are always in contact with the solution to be measured (not shown).
  • the liquid level can be detected from the inner bottom surface to the top of 36, and the measurement range of the liquid level detection sensor is expanded.
  • the thermistor paste is printed on the upper surface of the insulating substrate 21 at a position where the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 are provided. Thereafter, the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 are formed on the upper surface of the insulating substrate 21 by baking at about 270 ° C. for about 2 hours.
  • a heater paste is printed at a position where the heater layer 32 is provided on the upper surface of the insulating layer 31. Thereafter, the heater layer 32 is formed on the upper surface of the insulating layer 31 by baking at about 150 ° C. for about 30 minutes.
  • a protective layer paste is printed on the upper surfaces of the insulating substrate 21 and the heater layer 32. Then, the protective layer 35 is formed on the upper surfaces of the insulating substrate 21 and the heater layer 32 by curing by irradiating ultraviolet rays.
  • the insulating substrate 21 is stored inside the case 36. Thereafter, the contact member 37 is attached to the bottom surface of the case 36.
  • FIG. 5 is a side sectional view showing a state in which the liquid level detection sensor according to Embodiment 1 of the present invention operates.
  • a water conductive plastic container 38 used in a steam type microwave oven (not shown) or the like is filled with water 39 in advance
  • the liquid level detection sensor housed in the case 36 is used as the plastic container. Attach to 38.
  • This difference in resistance value is compared with the resistance value of the gas temperature detection resistor layer 26 located between the pair of gas temperature detection electrodes 25 and the resistance value of the liquid temperature detection resistor layer 28 located between the pair of liquid temperature detection electrodes 27.
  • the liquid level of the water 39 in the plastic container 38 is detected by calculating the above.
  • the heater layer 32 is provided between the liquid level detection resistance layer 24, the liquid temperature detection resistance layer 28, and the gas temperature detection resistance layer 26 and the protective layer 35. Therefore, the distance between the water 39 to be measured and the heater layer 32 is small. Therefore, the Joule heat generated from the heater layer 32 is immediately cooled by the water 39 filled in the plastic container 38. Therefore, even when the liquid level of the water 39 in the plastic container 38 changes abruptly, the liquid level detection can be performed instantaneously, and a liquid level detection sensor with good temporal response can be realized.
  • FIG. 6 is a side sectional view of a liquid level detection sensor according to Embodiment 2 of the present invention.
  • FIG. 7 is a front view of the insulating substrate in the liquid level detection sensor according to Embodiment 2 of the present invention.
  • FIG. 8 is a side sectional view of the insulating substrate in the liquid level detection sensor according to Embodiment 2 of the present invention.
  • FIG. 9 is a front view showing a state in which the protective layer and the heater layer are removed from the insulating substrate of the liquid level detection sensor according to the second embodiment of the present invention.
  • the insulating substrate 21 is a rectangular parallelepiped substrate made of polyethylene terephthalate formed in a film shape.
  • the insulating substrate 21 is erected substantially perpendicularly to the longitudinal direction, and a bent portion 22 bent at a substantially right angle is provided at the lower end.
  • the insulating substrate 21 is provided with a pair of liquid level detection electrodes 23 made of Ag from the upper part to the lower part of one side, and both ends of the liquid level detection electrode 23 are liquid level detection electrodes.
  • a liquid level detection resistance layer 24 is provided so as to be electrically connected to the power supply 23. This liquid level detection resistance layer 24 is made of Ag resin and epoxy resin.
  • the liquid level detection resistance layer 24 includes a plurality of parallel resistance layers 24 a and is electrically connected in parallel to the pair of liquid level detection electrodes 23.
  • the resistance value of the liquid level detection resistor layer 24 at room temperature is about 40 k ⁇ .
  • the plurality of parallel resistance layers 24a in the liquid level detection resistance layer 24 are inclined at an angle of about 45 degrees, which is the same angle with respect to the vertical. Then, by making the end portions 24b of the adjacent parallel resistance layers 24a overlap each other in the horizontal direction, the cross-sectional area force when the liquid level detection resistance layer 24 is cut in the horizontal direction is almost the same from above to below. It is comprised so that.
  • a gas temperature detection electrode 25 made of a pair of Ag is provided above the pair of liquid level detection electrodes 23, and both ends are electrically connected to the gas temperature detection electrode 25.
  • a gas temperature detection resistor layer 26 is provided so as to be connected.
  • This gas temperature detection resistance layer 26 is composed of a thermistor having a resin material made of a mixture of an Ag-based resin and an epoxy-based resin as a binder, and its resistance value is about 40 k ⁇ .
  • the bent portion 22 of the insulating substrate 21 is provided with a pair of Ag liquid temperature detection electrodes 27, and an Ag-based resin and an epoxy are connected so that both ends are electrically connected to the liquid temperature detection electrodes 27.
  • a liquid temperature detecting resistance layer 28 which also has a thermistor force using a resin material made of a mixture with a resin as a binder.
  • the resistance value of the liquid temperature detecting resistor layer 28 is about 40 k ⁇ .
  • the length between the pair of gas temperature detection electrodes 25 and the length between the pair of liquid temperature detection electrodes 27 are substantially the same, and this length is defined as a unit length.
  • the liquid temperature detection electrode 27 and the liquid temperature detection resistance layer 28 on the insulating substrate 21 are configured to have substantially the same height by providing the bent portion 22 provided at the lower end of the insulating substrate 21. Furthermore, the liquid level detection electrode 23, the gas temperature detection electrode 25, and the liquid temperature detection electrode 27 are electrically connected to the external electrode 30 via a wiring pattern 29 provided on one side surface of the insulating substrate 21.
  • the insulating layer 31 includes a liquid level detection electrode 23, a liquid level detection resistance layer 24, a gas temperature detection electrode 25, a gas temperature detection resistance layer 26, a liquid temperature detection electrode 27, and a liquid provided on the upper surface of the insulating substrate 21. It is provided so as to cover the temperature detection resistance layer 28.
  • the heater layer 32 is provided so as to meander the upper surface of the insulating layer 31, and is electrically connected to the heater electrode 34 via the circuit pattern 33. Connected with care.
  • the protective layer 35 is provided so as to cover the upper surface of the heater layer 32.
  • 36 is a metal case, and this case 36 is made of metal and accommodates the insulating substrate 21 inside.
  • a contact member 37 is attached to the bottom surface of the case 36 and holds the bent portion 22 provided on the insulating substrate 21.
  • the liquid level detection electrode 23, the gas temperature detection electrode 25, the liquid temperature detection electrode 27, the wiring pattern 29, the external electrode 30 and the heater electrode 34 are provided. Ag paste is printed by thick film printing method. Thereafter, the liquid level detection electrode 23, the gas temperature detection electrode 25, the liquid temperature detection electrode 27, the wiring pattern 29, the external electrode 30 and the heater electrode 34 are formed by baking at about 250 ° C. for about 30 minutes.
  • the thermistor paste is printed on the upper surface of the insulating substrate 21 at a position where the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 are provided. Thereafter, the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 are formed on the upper surface of the insulating substrate 21 by baking at about 270 ° C. for about 2 hours.
  • a heater paste is printed on the upper surface of the insulating layer 31 at a position where the heater layer 32 is provided. Thereafter, the heater layer 32 is formed on the upper surface of the insulating layer 31 by baking at about 150 ° C. for about 30 minutes.
  • a protective layer paste is printed on the upper surfaces of the insulating substrate 21 and the heater layer 32. Then, the protective layer 35 is formed on the upper surfaces of the insulating substrate 21 and the heater layer 32 by curing by irradiating ultraviolet rays.
  • the contact member 37 is attached to the lower end portion of the case 36. By attaching this contact member 37, it is stored inside the case 36.
  • the bent portion 22 provided at the lower end of the insulating substrate 21 is held by the contact member 37. Therefore, the liquid temperature detection resistance layer 28 and the liquid temperature detection electrode 27 are easily formed so as to have substantially the same height.
  • FIG. 10 is a side sectional view showing a state in which the liquid level detection sensor according to Embodiment 2 of the present invention operates. As shown in FIG. 10, after filling a water conductive plastic container 38 used in a steam type microwave oven (not shown) in advance with water 39, the liquid level detection sensor housed in the case 36 is replaced with a plastic container. Attach to 38.
  • FIG. 11 is a circuit diagram of a liquid level detection sensor according to Embodiment 2 of the present invention.
  • a constant current is supplied from the three constant current sources 40 to the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28.
  • output signals generated in the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 are amplified by the amplifier 41, and then output from the digital converter signal by the AD converter 42. Converted to a signal.
  • the microcomputer 43 compares the digital signals from the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 to calculate the water 39 in the plastic container 38. Detect the liquid level.
  • a plurality of liquid level detection resistance layers 24 are electrically connected to the pair of liquid level detection electrodes 23 in parallel.
  • the parallel resistance layer 24a Therefore, the liquid level detection resistance layer 24 is located above the insulating substrate 21. Even if the force is provided downward, the cross-sectional area of the entire liquid level detection resistance layer 24 is small. Therefore, the resistance value of the liquid level detection resistance layer 24 is almost the same as the resistance value of the gas temperature detection resistance layer 26 and the liquid temperature detection resistance layer 28.
  • the amplification factor of the output signal due to the resistance value of the liquid level detection resistance layer 24 need not be larger than the amplification factor of the output signal due to the resistance values of the gas temperature detection resistance layer 26 and the liquid temperature detection resistance layer 28. . That is, the amplification factors of the amplifier 41 of the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 can be made substantially the same. As a result, an output signal generated in the liquid level detection resistance layer 24 is obtained in a stable state.
  • the plurality of parallel resistance layers 24a are installed at the same angle with respect to the vertical. Therefore, the output signal generated in the liquid level detection resistance layer 24 can be continuously output as an analog signal with respect to the change in the liquid level of the water 39 as the solution to be measured.
  • the end portions 24b of the adjacent parallel resistance layers in the liquid level detection resistance layer 24 overlap each other in the horizontal direction. Therefore, the cross-sectional area force when the liquid level detection resistance layer 24 is cut in the horizontal direction is substantially the same from above to below. Therefore, the resistance value of the liquid level detection resistance layer 24 changes in proportion to the amount of change in the liquid level of the water 39 that is the solution to be measured, and the linearity of the output signal generated in the liquid level detection resistance layer 24 is also improved.
  • the liquid level detection sensor according to the present invention is a liquid level detection sensor that can perform liquid level detection instantaneously and has good temporal response even when the liquid level of the solution to be measured changes suddenly. The ability to provide S.
  • the liquid level detection sensor according to the present invention has an amplification factor of the output signal based on the resistance value of the liquid level detection resistance layer, which is greater than the amplification factor of the output signal based on the resistance values of the gas temperature detection resistance layer and the liquid temperature detection resistance layer. Since the output signal generated in the liquid level detection resistance layer that needs to be increased can be obtained in a stable state, it is particularly useful in a liquid level detection sensor for detecting the liquid level of a water tank used in a steam type microwave oven.

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  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)

Abstract

A liquid surface sensor in which a heater layer (32) for supplying heat to a liquid level detection resistance layer (24), a gas temperature detection resistance layer (26), and a liquid temperature detection resistance layer (28) are placed between a protective layer (35), the liquid level detection resistance layer (24), the liquid temperature detection resistance layer (28), and the gas temperature detection resistance layer (26). Even if the level of the liquid surface of a solution to be measured varies rapidly, the liquid surface sensor can measure the liquid surface instantly and has excellent temporal response.

Description

明 細 書  Specification
液面検出センサ  Liquid level detection sensor
技術分野  Technical field
[0001] 本発明は、特に、水タンクの液面を検出する液面検出センサに関する。  The present invention particularly relates to a liquid level detection sensor that detects the liquid level of a water tank.
背景技術  Background art
[0002] 従来のこの種の液面検出センサは、図 12、図 13に示すような構成を有していた。  [0002] This type of conventional liquid level detection sensor has a configuration as shown in FIGS.
[0003] 図 12は従来の液面検出センサの正面図である。図 13は従来の液面検出センサの 側断面図である。図 12、図 13において、絶縁基板 1はフィルム状に構成されたポリエ チレンテレフタレートからなる直方体形状の基板である。この絶縁基板 1は長手方向 にほぼ垂直に立設されるとともに、一側面にエポキシ系樹脂からなる絶縁層 2が設け られている。さらに、絶縁基板 1と絶縁層 2との間には銀 (Ag)系樹脂とエポキシ系樹 脂との混合物からなるヒーター層 3が設けられている。 FIG. 12 is a front view of a conventional liquid level detection sensor. FIG. 13 is a side sectional view of a conventional liquid level detection sensor. In FIGS. 12 and 13, the insulating substrate 1 is a rectangular parallelepiped substrate made of polyethylene terephthalate configured in a film shape. The insulating substrate 1 is erected almost vertically in the longitudinal direction, and an insulating layer 2 made of an epoxy resin is provided on one side surface. Further, a heater layer 3 made of a mixture of silver (Ag) resin and epoxy resin is provided between the insulating substrate 1 and the insulating layer 2.
[0004] 絶縁基板 1における絶縁層 2の側面には、長手方向の上方から下方にわたって Ag 系樹脂とエポキシ系樹脂との混合物からなる樹脂材料をバインダーとするサーミスタ で構成した液位検出抵抗層 4が設けられている。そして、この液位検出抵抗層 4の長 手方向と垂直の方向の両端には一対の液位検出電極 5が設けられるとともに、この 液位検出電極 5は配線パターン 6を介して外部電極 7と電気的に接続している。また 、絶縁基板 1における絶縁層 2の側面には、上方に位置して Ag系樹脂とエポキシ系 樹脂との混合物からなる樹脂材料をバインダーとするサーミスタで構成した気体温度 検出抵抗層 8が設けられている。そして、この気体温度検出抵抗層 8の両端には一 対の Agからなる気体温度検出電極 9が設けられるとともに、この気体温度検出電極 9 は配線パターン 6を介して外部電極 7と電気的に接続している。さらに、絶縁基板 1に おける絶縁層 2の側面には、下方に位置して Ag系樹脂とエポキシ系樹脂との混合物 力、らなる樹脂材料をバインダーとするサーミスタで構成した液体温度検出抵抗層 10 が設けられている。そして、この液体温度検出抵抗層 10の両端には一対の Agからな る液体温度検出電極 11が設けられるとともに、この液体温度検出電極 11は配線バタ ーン 6を介して外部電極 7と電気的に接続している。ここで、一対の気体温度検出電 極 9間の長さと一対の液体温度検出電極 11間の長さとは、ほぼ同一とし、この長さを 単位長さと定義する。 [0004] On the side surface of the insulating layer 2 in the insulating substrate 1, a liquid level detecting resistance layer 4 composed of a thermistor having a resin material made of a mixture of Ag-based resin and epoxy-based resin as a binder from above to below in the longitudinal direction. Is provided. A pair of liquid level detection electrodes 5 are provided on both ends of the liquid level detection resistance layer 4 in the direction perpendicular to the longitudinal direction. The liquid level detection electrodes 5 are connected to the external electrodes 7 via the wiring pattern 6. Electrically connected. Further, on the side surface of the insulating layer 2 in the insulating substrate 1, there is provided a gas temperature detecting resistance layer 8 which is located above and is composed of a thermistor having a resin material made of a mixture of Ag-based resin and epoxy-based resin as a binder. ing. A gas temperature detection electrode 9 made of a pair of Ag is provided at both ends of the gas temperature detection resistance layer 8, and the gas temperature detection electrode 9 is electrically connected to the external electrode 7 through the wiring pattern 6. is doing. Furthermore, on the side surface of the insulating layer 2 in the insulating substrate 1, a liquid temperature detecting resistance layer 10 is formed which is located below and is composed of a thermistor using a mixture of Ag-based resin and epoxy-based resin as a binder. Is provided. A liquid temperature detection electrode 11 made of a pair of Ag is provided at both ends of the liquid temperature detection resistance layer 10, and the liquid temperature detection electrode 11 is electrically connected to the external electrode 7 through the wiring pattern 6. Connected to. Here, a pair of gas temperature detectors The length between the poles 9 and the length between the pair of liquid temperature detection electrodes 11 are substantially the same, and this length is defined as a unit length.
[0005] 接着層 12は Si系またはアクリル系からなる。この接着層 12は絶縁基板 1、液位検 出抵抗層 4、液位検出電極 5、気体温度検出抵抗層 8、気体温度検出電極 9、液体 温度検出抵抗層 10および液体温度検出電極 11の側面に設けられている。  [0005] The adhesive layer 12 is made of Si or acrylic. This adhesive layer 12 is a side surface of the insulating substrate 1, the liquid level detection resistance layer 4, the liquid level detection electrode 5, the gas temperature detection resistance layer 8, the gas temperature detection electrode 9, the liquid temperature detection resistance layer 10, and the liquid temperature detection electrode 11. Is provided.
[0006] 以上のように構成された従来の液面検出センサについて、次にその動作を図面を 参照しながら説明する。  [0006] The operation of the conventional liquid level detection sensor configured as described above will now be described with reference to the drawings.
[0007] 図 14は従来の液面検出センサが動作する状態を示す側断面図である。図 14に示 すように、まず、液面検出センサを点滴溶液 14を満たした点滴容器 13の外側面に貼 り付ける。この場合、気体温度検出抵抗層 8 (図示せず)は点滴容器 13内における気 体と対向する。また、液体温度検出抵抗層 10は点滴容器 13内における液体と対向 する。さらに、液位検出抵抗層 4は点滴容器 13の外側面に貼り付ける。  FIG. 14 is a side sectional view showing a state in which a conventional liquid level detection sensor operates. As shown in FIG. 14, the liquid level detection sensor is first attached to the outer surface of the drip container 13 filled with the drip solution 14. In this case, the gas temperature detection resistance layer 8 (not shown) faces the gas in the drip container 13. Further, the liquid temperature detection resistance layer 10 faces the liquid in the drip container 13. Further, the liquid level detection resistance layer 4 is attached to the outer surface of the drip container 13.
[0008] この状態において、絶縁基板 1に埋設されたヒーター層 3に電圧が印加されると、ヒ 一ター層 3に流れる電流によりヒーター層 3からジュール熱が発生する。このジュール 熱は絶縁層 2を介して液位検出抵抗層 4、気体温度検出抵抗層 8および液体温度検 出抵抗層 10に到達する。このとき、液位検出抵抗層 4のうちの液体に対向する部分 と気体に対向する部分とでは、熱放散定数の差により単位長さあたりの自己発熱量 に差が生じる。その結果、液位検出抵抗層 4のうちの気体に対向する部分と液体に 対向する部分とでは温度差が生じ、これにより、サーミスタの抵抗 温度特性により 単位長さあたりの抵抗値に差が生じる。そして、この抵抗値の差を一対の気体温度 検出電極 9間に位置する気体温度検出抵抗層 8の抵抗値および一対の液体温度検 出電極 11間に位置する液体温度検出抵抗層 10の抵抗値と比較して演算することに より、点滴容器 13内の点滴溶液 14の液面を検出する。なお、この出願の発明に関す る先行技術文献情報としては、例えば、特許文献 1が知られている。  In this state, when a voltage is applied to the heater layer 3 embedded in the insulating substrate 1, Joule heat is generated from the heater layer 3 by the current flowing through the heater layer 3. This Joule heat reaches the liquid level detection resistance layer 4, the gas temperature detection resistance layer 8, and the liquid temperature detection resistance layer 10 through the insulating layer 2. At this time, there is a difference in self-heating value per unit length due to the difference in heat dissipation constant between the portion of the liquid level detection resistance layer 4 facing the liquid and the portion facing the gas. As a result, there is a temperature difference between the portion of the liquid level detection resistance layer 4 facing the gas and the portion facing the liquid, which causes a difference in resistance value per unit length due to the resistance-temperature characteristics of the thermistor. . The difference between the resistance values is the resistance value of the gas temperature detection resistance layer 8 positioned between the pair of gas temperature detection electrodes 9 and the resistance value of the liquid temperature detection resistance layer 10 positioned between the pair of liquid temperature detection electrodes 11. The liquid level of the drip solution 14 in the drip container 13 is detected by calculating in comparison with. For example, Patent Document 1 is known as prior art document information relating to the invention of this application.
[0009] しかしながら、上記した従来の構成においては、液面を検出する点滴容器 13とヒー ター層 3との間に絶縁層 2、液位検出抵抗層 4、液位検出電極 5、液体温度検出抵抗 層 10、液体温度検出電極 11、気体温度検出抵抗層 8、気体温度検出電極 9および 接着層 12を設けているため、点滴容器 13とヒーター層 3との距離が大きくなる。これ により、ヒーター層 3から発生するジュール熱が点滴容器 13に充填された点滴容液 1 4により冷却されるまでの時間がかかる。従って、点滴容器 13における点滴溶液 14 の液面が急激に変化した場合、液面検出の測定が瞬時に行えなくなり、液面検出セ ンサの時間的応答性が良好でなレ、。 However, in the conventional configuration described above, the insulating layer 2, the liquid level detection resistance layer 4, the liquid level detection electrode 5, and the liquid temperature detection are provided between the drip container 13 for detecting the liquid level and the heater layer 3. Since the resistance layer 10, the liquid temperature detection electrode 11, the gas temperature detection resistance layer 8, the gas temperature detection electrode 9 and the adhesive layer 12 are provided, the distance between the drip container 13 and the heater layer 3 is increased. this Therefore, it takes time until Joule heat generated from the heater layer 3 is cooled by the drip liquid 14 filled in the drip container 13. Therefore, if the liquid level of the drip solution 14 in the drip container 13 changes suddenly, measurement of the liquid level cannot be performed instantaneously, and the time response of the liquid level detection sensor is good.
[0010] また、液位検出抵抗層 4が絶縁基板 1の上方から下方にわたって設けられているた め、その断面積は絶縁基板 1における上方あるいは下方のみに位置して設けられて いる気体温度検出抵抗層 8および液体温度検出抵抗層 10の断面積に比較して大き い。この場合、この液位検出抵抗層 4の抵抗値を、気体温度検出抵抗層 8および液 体温度検出抵抗層 10の抵抗値と比較して演算する際には、液位検出抵抗層 4の抵 抗値による出力信号を、気体温度検出抵抗層 8および液体温度検出抵抗層 10の抵 抗値による出力信号よりも大きく増幅しなければならない。そのため、液位検出抵抗 層 4に発生する出力信号が不安定になってしまう。 [0010] Further, since the liquid level detection resistance layer 4 is provided from the upper side to the lower side of the insulating substrate 1, the cross-sectional area thereof is provided only above or below the insulating substrate 1. Larger than the cross-sectional area of the resistance layer 8 and the liquid temperature detection resistance layer 10. In this case, when the resistance value of the liquid level detection resistance layer 4 is compared with the resistance values of the gas temperature detection resistance layer 8 and the liquid temperature detection resistance layer 10, the resistance of the liquid level detection resistance layer 4 is calculated. The output signal due to the resistance value must be amplified more than the output signal due to the resistance value of the gas temperature detection resistance layer 8 and the liquid temperature detection resistance layer 10. Therefore, the output signal generated in the liquid level detection resistance layer 4 becomes unstable.
特許文献 1 :特開 2006— 90714号公報  Patent Document 1: Japanese Unexamined Patent Application Publication No. 2006-90714
発明の開示  Disclosure of the invention
[0011] 本発明は、被測定溶液の液面が急激に変化した場合でも、液面検出の測定が瞬 時に行えて時間的応答性が良好である液面検出センサを提供する。また、液位検出 抵抗層の抵抗値による出力信号を、気体温度検出抵抗層および液体温度検出抵抗 層の抵抗値による出力信号よりも大きく増幅することなく液位検出抵抗層に発生する 出力信号が安定した状態で検出される液面検出センサを提供する。  [0011] The present invention provides a liquid level detection sensor that can measure the liquid level instantaneously and has good temporal response even when the liquid level of the solution to be measured changes abruptly. In addition, the output signal generated in the liquid level detection resistance layer is not amplified more greatly than the output signal due to the resistance value of the gas temperature detection resistance layer and the liquid temperature detection resistance layer. Provided is a liquid level detection sensor that is detected in a stable state.
[0012] 本発明に係る液面検出センサは、長手方向に立設された絶縁基板と、この絶縁基 板の長手方向の一側面に上方から下方にわたって設けられた液位検出抵抗層と、こ の液位検出抵抗層の両端に設けられた一対の液位検出電極と、絶縁基板の一側面 の上方に位置して設けられた気体温度検出抵抗層と、この気体温度検出抵抗層の 両端に設けられた一対の気体温度検出電極と、絶縁基板の一側面の下方に位置し て設けられた液体温度検出抵抗層と、この液体温度検出抵抗層の両端に設けられ た一対の液体温度検出電極と、液位検出抵抗層、気体温度検出抵抗層および液体 温度検出抵抗層に熱を供給するヒーター層と、液位検出抵抗層、液位検出電極、気 体温度検出抵抗層、気体温度検出電極、液体温度検出抵抗層、液体温度検出電 極およびヒーター層を覆うように設けた保護層とを備える。そして、ヒーター層を液位 検出抵抗層、液体温度検出抵抗層および気体温度検出抵抗層と保護層との間に設 けたものある。 The liquid level detection sensor according to the present invention includes an insulating substrate standing in the longitudinal direction, a liquid level detection resistance layer provided on one side in the longitudinal direction of the insulating substrate from above to below. A pair of liquid level detection electrodes provided at both ends of the liquid level detection resistance layer, a gas temperature detection resistance layer provided above one side surface of the insulating substrate, and both ends of the gas temperature detection resistance layer A pair of gas temperature detection electrodes provided, a liquid temperature detection resistance layer provided below one side of the insulating substrate, and a pair of liquid temperature detection electrodes provided at both ends of the liquid temperature detection resistance layer And a heater layer for supplying heat to the liquid level detection resistance layer, the gas temperature detection resistance layer, and the liquid temperature detection resistance layer, the liquid level detection resistance layer, the liquid level detection electrode, the gas temperature detection resistance layer, and the gas temperature detection electrode. , Liquid temperature detection resistance layer, Liquid temperature detection current And a protective layer provided to cover the electrode and the heater layer. A heater layer is provided between the liquid level detection resistance layer, the liquid temperature detection resistance layer, the gas temperature detection resistance layer, and the protective layer.
[0013] この構成によれば、ヒーター層を液位検出抵抗層、液体温度検出抵抗層および基 体温度検出抵抗層と保護層との間に設けているため、被測定溶液とヒーター層との 距離は小さくなり、これにより、ヒーター層から発生するジュール熱は被測定溶液によ り即座に冷却される。従って、被測定溶液の液面が急激に変化した場合でも、液面 検出の測定を瞬時に行うことができ、時間的応答性が良好である液面検出センサを 提供すること力でさる。  [0013] According to this configuration, the heater layer is provided between the liquid level detection resistance layer, the liquid temperature detection resistance layer, the base temperature detection resistance layer, and the protective layer. The distance is reduced, so that the Joule heat generated from the heater layer is immediately cooled by the solution to be measured. Therefore, even when the liquid level of the solution to be measured changes suddenly, the liquid level detection can be performed instantaneously, and it is possible to provide a liquid level detection sensor with good temporal response.
[0014] また、本発明に係る液面検出センサは、液位検出抵抗層を一対の液位検出電極に 対して電気的に並列に接続される複数の並列抵抗層で構成するとともに、これらの 並列抵抗層を鉛直に対して同一の角度に傾けて設置したものである。  [0014] In addition, the liquid level detection sensor according to the present invention includes a liquid level detection resistance layer including a plurality of parallel resistance layers electrically connected in parallel to a pair of liquid level detection electrodes. The parallel resistance layer is installed at the same angle with respect to the vertical.
[0015] このような構成によれば、液位検出抵抗層を絶縁基板の上方から下方にわたって 設けても、液位検出抵抗層全体としての断面積は小さくなり、液位検出抵抗層の抵 抗値は気体温度検出抵抗層および液体温度検出抵抗層の抵抗値とほぼ同一となる 。従って、液位検出抵抗層に発生する出力信号が安定した状態で検出される。 図面の簡単な説明  [0015] According to such a configuration, even if the liquid level detection resistance layer is provided from the upper side to the lower side of the insulating substrate, the cross-sectional area of the entire liquid level detection resistance layer is reduced, and the resistance of the liquid level detection resistance layer is reduced. The value is almost the same as the resistance value of the gas temperature detection resistance layer and the liquid temperature detection resistance layer. Therefore, the output signal generated in the liquid level detection resistance layer is detected in a stable state. Brief Description of Drawings
[0016] [図 1]図 1は本発明の実施の形態 1に係る液面検出センサの側断面図である。  FIG. 1 is a side sectional view of a liquid level detection sensor according to Embodiment 1 of the present invention.
[図 2]図 2は本発明の実施の形態 1に係る液面検出センサにおける絶縁基板を折り曲 げる前の状態を示す正面図である。  FIG. 2 is a front view showing a state before the insulating substrate is bent in the liquid level detection sensor according to Embodiment 1 of the present invention.
[図 3]図 3は本発明の実施の形態 1に係る液面検出センサにおける絶縁基板を折り曲 げる前の状態を示す側断面図である。  FIG. 3 is a side sectional view showing a state before the insulating substrate is bent in the liquid level detection sensor according to Embodiment 1 of the present invention.
[図 4]図 4は本発明の実施の形態 1に係る液面検出センサの絶縁基板力 保護層お よびヒーター層を取り外した状態を示す正面図である。  FIG. 4 is a front view showing a state in which an insulating substrate force protection layer and a heater layer are removed from the liquid level detection sensor according to Embodiment 1 of the present invention.
[図 5]図 5は本発明の実施の形態 1に係る液面検出センサが動作する状態を示す側 断面図である。  FIG. 5 is a side sectional view showing a state in which the liquid level detection sensor according to Embodiment 1 of the present invention operates.
[図 6]図 6は本発明の実施の形態 2に係る液面検出センサの側断面図である。  FIG. 6 is a side sectional view of a liquid level detection sensor according to Embodiment 2 of the present invention.
[図 7]図 7は本発明の実施の形態 2に係る液面検出センサにおける絶縁基板の正面 図である。 FIG. 7 is a front view of an insulating substrate in the liquid level detection sensor according to Embodiment 2 of the present invention. FIG.
園 8]図 8は本発明の実施の形態 2に係る液面検出センサにおける絶縁基板の側断 面図である。 FIG. 8 is a side cross-sectional view of the insulating substrate in the liquid level detection sensor according to Embodiment 2 of the present invention.
園 9]図 9は本発明の実施の形態 2に係る液面検出センサの絶縁基板からなる保護 層およびヒーター層を取り外した状態を示す正面図である。 9] FIG. 9 is a front view showing a state in which the protective layer and the heater layer made of the insulating substrate of the liquid level detection sensor according to Embodiment 2 of the present invention are removed.
園 10]図 10は本発明の実施の形態 2に係る液面検出センサが動作する状態を示す 側断面図である。 FIG. 10 is a side sectional view showing a state in which the liquid level detection sensor according to Embodiment 2 of the present invention operates.
[図 11]図 11は本発明の実施の形態 2に係る液面検出センサの回路図である。  FIG. 11 is a circuit diagram of a liquid level detection sensor according to Embodiment 2 of the present invention.
[図 12]図 12は従来の液面検出センサの正面図である。  FIG. 12 is a front view of a conventional liquid level detection sensor.
園 13]図 13は従来の液面検出センサの側断面図である。 13] FIG. 13 is a side sectional view of a conventional liquid level detection sensor.
園 14]図 14は従来の液面検出センサが動作する状態を示す側断面図である。 符号の説明 14] FIG. 14 is a side sectional view showing a state in which a conventional liquid level detection sensor operates. Explanation of symbols
21 絶縁基板  21 Insulating substrate
22 屈曲部  22 Bend
23 液位検出電極  23 Liquid level detection electrode
24 液位検出抵抗層  24 Liquid level detection resistor layer
24a 並列抵抗層  24a Parallel resistance layer
24b 並列抵抗層の端部  24b Edge of parallel resistance layer
25 気体温度検出電極  25 Gas temperature detection electrode
26 気体温度検出抵抗層  26 Gas temperature detection resistor layer
27 液体温度検出電極  27 Liquid temperature detection electrode
28 液体温度検出抵抗層  28 Liquid temperature sensing resistor layer
32 ヒーター層  32 Heater layer
36 ケース  36 cases
37 当接部材  37 Contact member
40 定電流源  40 Constant current source
41 増幅器  41 Amplifier
42 AD変換器 43 マイコン 42 AD converter 43 Microcomputer
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0018] (実施の形態 1) [0018] (Embodiment 1)
以下、本発明の実施の形態 1について、図面を参照しながら説明する。図 1は本発 明の実施の形態 1に係る液面検出センサの側断面図である。図 2は本発明の実施の 形態 1に係る液面検出センサにおける絶縁基板を折り曲げる前の状態での正面図で ある。図 3は本発明の実施の形態 1に係る液面検出センサにおける絶縁基板を折り 曲げる前の状態での側断面図である。図 4は本発明の実施の形態 1に係る液面検出 センサの絶縁基板から保護層およびヒーター層を取り外した状態を示す正面図であ  Embodiment 1 of the present invention will be described below with reference to the drawings. FIG. 1 is a side sectional view of a liquid level detection sensor according to Embodiment 1 of the present invention. FIG. 2 is a front view of the liquid level detection sensor according to Embodiment 1 of the present invention before the insulating substrate is bent. FIG. 3 is a side sectional view of the liquid level detection sensor according to Embodiment 1 of the present invention in a state before the insulating substrate is bent. FIG. 4 is a front view showing a state in which the protective layer and the heater layer are removed from the insulating substrate of the liquid level detection sensor according to Embodiment 1 of the present invention.
[0019] 図 1〜図 4において、絶縁基板 21はフィルム状に構成されたポリエチレンテレフタレ ートからなる直方体形状の基板である。この絶縁基板 21は長手方向にほぼ垂直に立 設するとともに、図 1に示すように、下端にほぼ直角に折り曲げられた屈曲部 22が設 けられている。また、絶縁基板 21には、長手方向の一側面の上部から下部にわたつ て一対の Agからなる液位検出電極 23が設けられる。さらに、この液位検出電極 23に は、両端が液位検出電極 23と電気的に接続されるように液位検出抵抗層 24が設け られている。液位検出抵抗層 24は、 Ag系樹脂とエポキシ系樹脂との混合物からなる 樹脂材料をバインダーとするサーミスタで構成されている。 In FIGS. 1 to 4, an insulating substrate 21 is a rectangular parallelepiped substrate made of polyethylene terephthalate configured in a film shape. The insulating substrate 21 is erected substantially perpendicularly to the longitudinal direction, and as shown in FIG. 1, a bent portion 22 bent at a substantially right angle is provided at the lower end. Further, the insulating substrate 21 is provided with a liquid level detection electrode 23 made of a pair of Ag from the upper part to the lower part of one side surface in the longitudinal direction. Further, the liquid level detection electrode 23 is provided with a liquid level detection resistance layer 24 so that both ends thereof are electrically connected to the liquid level detection electrode 23. The liquid level detection resistance layer 24 is composed of a thermistor having a resin material made of a mixture of an Ag-based resin and an epoxy-based resin as a binder.
[0020] 絶縁基板 21の一側面には、一対の液位検出電極 23の上方に位置して一対の Ag 力、らなる気体温度検出電極 25が設けられている。また、この気体温度検出電極 25に 両端が電気的に接続されるように気体温度検出抵抗層 26が設けられている。この気 体温度検出抵抗層 26は、 Ag系樹脂とエポキシ系樹脂との混合物からなる樹脂材料 をバインダーとするサーミスタで構成されて!/、る。  [0020] On one side surface of the insulating substrate 21, a gas temperature detection electrode 25 comprising a pair of Ag forces is provided above the pair of liquid level detection electrodes 23. A gas temperature detection resistance layer 26 is provided so that both ends of the gas temperature detection electrode 25 are electrically connected. This gas temperature detection resistance layer 26 is composed of a thermistor using a resin material made of a mixture of an Ag-based resin and an epoxy-based resin as a binder.
[0021] 絶縁基板 21における屈曲部 22には一対の Agからなる液体温度検出電極 27が設 けられている。この液体温度検出電極 27にその両端が電気的に接続されるように Ag 系樹脂とエポキシ系樹脂との混合物からなる樹脂材料をバインダーとするサーミスタ 力 なる液体温度検出抵抗層 28が設けられている。ここで、一対の気体温度検出電 極 25間の長さと、一対の液体温度検出電極 27間の長さとはほぼ同一とし、この長さ を単位長さと定義する。絶縁基板 21における液体温度検出電極 27と液体温度検出 抵抗層 28は、絶縁基板 21の下端に設けた屈曲部 22に設けることにより、ほぼ同一 高さになるように構成されている。液位検出電極 23、気体温度検出電極 25および液 体温度検出電極 27は、絶縁基板 21の一側面に設けられた配線パターン 29を介し て外部電極 30と電気的に接続されている。 [0021] The bent portion 22 of the insulating substrate 21 is provided with a liquid temperature detection electrode 27 made of a pair of Ag. A liquid temperature detection resistance layer 28 having a thermistor force using a resin material made of a mixture of an Ag-based resin and an epoxy-based resin as a binder is provided so that both ends of the liquid temperature detection electrode 27 are electrically connected. . Here, the length between the pair of gas temperature detection electrodes 25 and the length between the pair of liquid temperature detection electrodes 27 are substantially the same. Is defined as a unit length. The liquid temperature detection electrode 27 and the liquid temperature detection resistance layer 28 on the insulating substrate 21 are configured to have substantially the same height by being provided at the bent portion 22 provided at the lower end of the insulating substrate 21. The liquid level detection electrode 23, the gas temperature detection electrode 25, and the liquid temperature detection electrode 27 are electrically connected to the external electrode 30 through a wiring pattern 29 provided on one side surface of the insulating substrate 21.
[0022] 絶縁層 31は、絶縁基板 21の上面に設けられた液位検出電極 23、液位検出抵抗 層 24、気体温度検出電極 25、気体温度検出抵抗層 26、液体温度検出電極 27およ び液体温度検出抵抗層 28を覆うように設けられている。ヒーター層 32は絶縁層 31の 上面を蛇行するように設けられるとともに、回路パターン 33を介してヒーター電極 34 と電気的に接続されている。保護層 35はヒーター層 32の上面を覆うように設けられて いる。ケース 36は金属製であり、絶縁基板 21を内側に収納する。当接部材 37がケ ース 36の底面に取り付けられており、絶縁基板 21の下端に設けた屈曲部 22を保持 している。 [0022] The insulating layer 31 includes a liquid level detection electrode 23, a liquid level detection resistance layer 24, a gas temperature detection electrode 25, a gas temperature detection resistance layer 26, a liquid temperature detection electrode 27, and a liquid temperature detection electrode 27 provided on the upper surface of the insulating substrate 21. And the liquid temperature detection resistance layer 28 is provided. The heater layer 32 is provided so as to meander the upper surface of the insulating layer 31 and is electrically connected to the heater electrode 34 via the circuit pattern 33. The protective layer 35 is provided so as to cover the upper surface of the heater layer 32. The case 36 is made of metal and accommodates the insulating substrate 21 inside. A contact member 37 is attached to the bottom surface of the case 36 and holds a bent portion 22 provided at the lower end of the insulating substrate 21.
[0023] 上記したように本発明の実施の形態 1におレ、ては、絶縁基板 21における液体温度 検出抵抗層 28と液体温度検出電極 27を設けた部分にほぼ直角に折り曲げられる屈 曲部 22が設けられることにより、液体温度検出抵抗層 28と液体温度検出電極 27と がほぼ同一高さになるように構成されている。従って、液体温度検出抵抗層 28と液 体温度検出電極 27をケース 36の内底面に設けることができる。その結果、ケース 36 内に被測定溶液(図示せず)が少しでも満たされれば、液体温度検出抵抗層 28と液 体温度検出電極 27は常に被測定溶液(図示せず)に接するので、ケース 36の内底 面から上部にわたって液面を検出することができ、液面検出センサの測定範囲が広 くなる。  As described above, in the first embodiment of the present invention, the bent portion that is bent substantially at right angles to the portion provided with the liquid temperature detecting resistor layer 28 and the liquid temperature detecting electrode 27 in the insulating substrate 21. By providing 22, the liquid temperature detection resistance layer 28 and the liquid temperature detection electrode 27 are configured to have substantially the same height. Therefore, the liquid temperature detection resistance layer 28 and the liquid temperature detection electrode 27 can be provided on the inner bottom surface of the case 36. As a result, if the solution to be measured (not shown) fills the case 36 even a little, the liquid temperature detection resistance layer 28 and the liquid temperature detection electrode 27 are always in contact with the solution to be measured (not shown). The liquid level can be detected from the inner bottom surface to the top of 36, and the measurement range of the liquid level detection sensor is expanded.
[0024] 以上のように構成された本発明の実施の形態 1における液面検出センサについて 、次に、その製造方法を説明する。  Next, a manufacturing method of the liquid level detection sensor according to the first embodiment of the present invention configured as described above will be described.
[0025] まず、ポリイミド製の絶縁基板 21の一側面において、液位検出電極 23、気体温度 検出電極 25、液体温度検出電極 27、配線パターン 29、外部電極 30およびヒーター 電極 34を設ける位置に、厚膜印刷工法により Agペーストを印刷する。その後、約 25 0°Cで約 30分間焼成することにより、液位検出電極 23、気体温度検出電極 25、液体 温度検出電極 27、配線パターン 29、外部電極 30およびヒーター電極 34を形成する[0025] First, on one side of an insulating substrate 21 made of polyimide, at a position where the liquid level detection electrode 23, the gas temperature detection electrode 25, the liquid temperature detection electrode 27, the wiring pattern 29, the external electrode 30 and the heater electrode 34 are provided. Ag paste is printed by thick film printing method. After that, the liquid level detection electrode 23, the gas temperature detection electrode 25, and the liquid are baked at about 250 ° C for about 30 minutes. Form temperature detection electrode 27, wiring pattern 29, external electrode 30 and heater electrode 34
Yes
[0026] 次に、絶縁基板 21の上面において、液位検出抵抗層 24、気体温度検出抵抗層 2 6および液体温度検出抵抗層 28を設ける位置にサーミスタペーストを印刷する。その 後、約 270°Cで約 2時間焼成することにより、絶縁基板 21の上面に液位検出抵抗層 24、気体温度検出抵抗層 26および液体温度検出抵抗層 28を形成する。  Next, the thermistor paste is printed on the upper surface of the insulating substrate 21 at a position where the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 are provided. Thereafter, the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 are formed on the upper surface of the insulating substrate 21 by baking at about 270 ° C. for about 2 hours.
[0027] さらに、絶縁基板 21の一側面における配線パターン 29、液位検出抵抗層 24、気 体温度検出抵抗層 26、液体温度検出抵抗層 28、気体温度検出電極 25、液体温度 検出電極 27および液位検出電極 23の上面に絶縁層ペーストを印刷する。そして、 紫外線を照射して硬化させることにより、絶縁層 31を形成する。  [0027] Further, the wiring pattern 29 on one side of the insulating substrate 21, the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, the liquid temperature detection resistance layer 28, the gas temperature detection electrode 25, the liquid temperature detection electrode 27, and An insulating layer paste is printed on the upper surface of the liquid level detection electrode 23. Then, the insulating layer 31 is formed by curing by irradiating with ultraviolet rays.
[0028] 次に、絶縁層 31の上面において、ヒーター層 32を設ける位置にヒーターペーストを 印刷する。その後、約 150°Cで約 30分間焼成することにより、絶縁層 31の上面にヒ 一ター層 32を形成する。  Next, a heater paste is printed at a position where the heater layer 32 is provided on the upper surface of the insulating layer 31. Thereafter, the heater layer 32 is formed on the upper surface of the insulating layer 31 by baking at about 150 ° C. for about 30 minutes.
[0029] さらに、絶縁基板 21およびヒーター層 32の上面に保護層ペーストを印刷する。そし て、紫外線を照射して硬化させることにより、絶縁基板 21およびヒーター層 32の上面 に保護層 35を形成する。  Furthermore, a protective layer paste is printed on the upper surfaces of the insulating substrate 21 and the heater layer 32. Then, the protective layer 35 is formed on the upper surfaces of the insulating substrate 21 and the heater layer 32 by curing by irradiating ultraviolet rays.
[0030] 最後に、絶縁基板 21をケース 36の内側に収納する。その後、ケース 36の底面に 当接部材 37を取り付ける。  Finally, the insulating substrate 21 is stored inside the case 36. Thereafter, the contact member 37 is attached to the bottom surface of the case 36.
[0031] 以上のように構成され、かつ製造された本発明の実施の形態 1における液面検出 センサについて、その動作を図面を参照しながら説明する。  The operation of the liquid level detection sensor according to the first embodiment of the present invention configured and manufactured as described above will be described with reference to the drawings.
[0032] 図 5は本発明の実施の形態 1に係る液面検出センサが動作する状態を示す側断面 図である。図 5に示すように、予めスチーム型電子レンジ(図示せず)等に使用される 熱伝導性のプラスチック容器 38に水 39を満たした後、ケース 36に収納された液面 検出センサをプラスチック容器 38に取り付ける。  FIG. 5 is a side sectional view showing a state in which the liquid level detection sensor according to Embodiment 1 of the present invention operates. As shown in FIG. 5, after a water conductive plastic container 38 used in a steam type microwave oven (not shown) or the like is filled with water 39 in advance, the liquid level detection sensor housed in the case 36 is used as the plastic container. Attach to 38.
[0033] この状態において、絶縁基板 21におけるヒーター層 32に電圧が印加されると、ヒー ター層 32に流れる電流によりヒーター層 32からジュール熱が発生する。このジユー ル熱は絶縁層 31を介して液位検出抵抗層 24、気体温度検出抵抗層 26および液体 温度検出抵抗層 28に到達する。このとき、液位検出抵抗層 24のうちの液体に対向 する部分と気体に対向する部分とでは、熱放散定数の差により単位長さあたりの自 己発熱量に差が生じる。そのため、液位検出抵抗層 24のうちの気体に対向する部分 と液体に対向する部分とでは温度差が生じ、これにより、サーミスタの抵抗 温度特 性により単位長さあたりの抵抗値に差が生じる。この抵抗値の差を一対の気体温度 検出電極 25間に位置する気体温度検出抵抗層 26の抵抗値および一対の液体温度 検出電極 27間に位置する液体温度検出抵抗層 28の抵抗値と比較して演算すること により、プラスチック容器 38内の水 39の液面を検出する。 In this state, when a voltage is applied to the heater layer 32 in the insulating substrate 21, Joule heat is generated from the heater layer 32 due to the current flowing through the heater layer 32. This Julian heat reaches the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 through the insulating layer 31. At this time, the liquid level detection resistance layer 24 is opposed to the liquid. The self-heating value per unit length is different due to the difference in the heat dissipation constant between the part that faces the gas and the part that faces the gas. Therefore, there is a temperature difference between the portion of the liquid level detection resistance layer 24 facing the gas and the portion facing the liquid, and this causes a difference in resistance value per unit length due to the resistance temperature characteristics of the thermistor. . This difference in resistance value is compared with the resistance value of the gas temperature detection resistor layer 26 located between the pair of gas temperature detection electrodes 25 and the resistance value of the liquid temperature detection resistor layer 28 located between the pair of liquid temperature detection electrodes 27. The liquid level of the water 39 in the plastic container 38 is detected by calculating the above.
[0034] ここで、プラスチック容器 38内の水 39の液面が急激に変化する場合を考える。本 発明の実施の形態 1における液面検出センサにおいては、ヒーター層 32を液位検出 抵抗層 24、液体温度検出抵抗層 28および気体温度検出抵抗層 26と保護層 35との 間に設けているので、被測定溶液である水 39とヒーター層 32との距離は小さい。よつ て、ヒーター層 32から発生するジュール熱はプラスチック容器 38に充填された水 39 により即座に冷却される。従って、プラスチック容器 38内の水 39の液面が急激に変 化した場合でも、液面検出の測定を瞬時に行うことができ、時間的応答性が良好で ある液面検出センサが実現できる。  Here, consider a case where the liquid level of the water 39 in the plastic container 38 changes abruptly. In the liquid level detection sensor according to Embodiment 1 of the present invention, the heater layer 32 is provided between the liquid level detection resistance layer 24, the liquid temperature detection resistance layer 28, and the gas temperature detection resistance layer 26 and the protective layer 35. Therefore, the distance between the water 39 to be measured and the heater layer 32 is small. Therefore, the Joule heat generated from the heater layer 32 is immediately cooled by the water 39 filled in the plastic container 38. Therefore, even when the liquid level of the water 39 in the plastic container 38 changes abruptly, the liquid level detection can be performed instantaneously, and a liquid level detection sensor with good temporal response can be realized.
[0035] (実施の形態 2)  [Embodiment 2]
以下、本発明の実施の形態 2について、図面を参照しながら説明する。図 6は本発 明の実施の形態 2に係る液面検出センサの側断面図である。図 7は本発明の実施の 形態 2に係る液面検出センサにおける絶縁基板の正面図である。図 8は本発明の実 施の形態 2に係る液面検出センサにおける絶縁基板の側断面図である。図 9は本発 明の実施の形態 2に係る液面検出センサの絶縁基板から保護層およびヒーター層を 取り外した状態を示す正面図である。図 6〜図 9において、絶縁基板 21はフィルム状 に構成されたポリエチレンテレフタレートからなる直方体形状の基板である。この絶縁 基板 21は長手方向にほぼ垂直に立設させるとともに、下端にほぼ直角に折り曲げら れた屈曲部 22が設けられている。また、絶縁基板 21には、一側面の上部から下部に わたって一対の Agからなる液位検出電極 23が設けられているとともに、この液位検 出電極 23には、両端が液位検出電極 23と電気的に接続されるように液位検出抵抗 層 24が設けられている。そして、この液位検出抵抗層 24は、 Ag系樹脂とエポキシ系 樹脂との混合物からなる樹脂材料をバインダーとするサーミスタで構成されて!/、る。ま た、この液位検出抵抗層 24は複数の並列抵抗層 24aで構成されており、一対の液 位検出電極 23に対して電気的に並列に接続されている。 Hereinafter, Embodiment 2 of the present invention will be described with reference to the drawings. FIG. 6 is a side sectional view of a liquid level detection sensor according to Embodiment 2 of the present invention. FIG. 7 is a front view of the insulating substrate in the liquid level detection sensor according to Embodiment 2 of the present invention. FIG. 8 is a side sectional view of the insulating substrate in the liquid level detection sensor according to Embodiment 2 of the present invention. FIG. 9 is a front view showing a state in which the protective layer and the heater layer are removed from the insulating substrate of the liquid level detection sensor according to the second embodiment of the present invention. 6 to 9, the insulating substrate 21 is a rectangular parallelepiped substrate made of polyethylene terephthalate formed in a film shape. The insulating substrate 21 is erected substantially perpendicularly to the longitudinal direction, and a bent portion 22 bent at a substantially right angle is provided at the lower end. Further, the insulating substrate 21 is provided with a pair of liquid level detection electrodes 23 made of Ag from the upper part to the lower part of one side, and both ends of the liquid level detection electrode 23 are liquid level detection electrodes. A liquid level detection resistance layer 24 is provided so as to be electrically connected to the power supply 23. This liquid level detection resistance layer 24 is made of Ag resin and epoxy resin. It consists of a thermistor with a resin material made of a mixture with resin as a binder. The liquid level detection resistance layer 24 includes a plurality of parallel resistance layers 24 a and is electrically connected in parallel to the pair of liquid level detection electrodes 23.
[0036] 液位検出抵抗層 24の常温時での抵抗値は約 40k Ωである。この液位検出抵抗層 24における複数の並列抵抗層 24aは、鉛直に対して同一の角度である約 45度の角 度に傾けて設置されている。そして、隣り合う並列抵抗層 24aの端部 24bが水平方向 に対して互いに重なり合うようにすることにより、液位検出抵抗層 24を水平方向で切 断したときの断面積力 上方から下方にわたってほぼ同一になるように構成されてい る。絶縁基板 21の一側面には、一対の液位検出電極 23の上方に位置して一対の A gからなる気体温度検出電極 25が設けられるとともに、この気体温度検出電極 25に 両端が電気的に接続されるように気体温度検出抵抗層 26が設けられている。この気 体温度検出抵抗層 26は、 Ag系樹脂とエポキシ系樹脂との混合物からなる樹脂材料 をバインダーとするサーミスタで構成されており、その抵抗値は約 40k Ωである。  [0036] The resistance value of the liquid level detection resistor layer 24 at room temperature is about 40 kΩ. The plurality of parallel resistance layers 24a in the liquid level detection resistance layer 24 are inclined at an angle of about 45 degrees, which is the same angle with respect to the vertical. Then, by making the end portions 24b of the adjacent parallel resistance layers 24a overlap each other in the horizontal direction, the cross-sectional area force when the liquid level detection resistance layer 24 is cut in the horizontal direction is almost the same from above to below. It is comprised so that. On one side of the insulating substrate 21, a gas temperature detection electrode 25 made of a pair of Ag is provided above the pair of liquid level detection electrodes 23, and both ends are electrically connected to the gas temperature detection electrode 25. A gas temperature detection resistor layer 26 is provided so as to be connected. This gas temperature detection resistance layer 26 is composed of a thermistor having a resin material made of a mixture of an Ag-based resin and an epoxy-based resin as a binder, and its resistance value is about 40 kΩ.
[0037] 絶縁基板 21における屈曲部 22には一対の Agからなる液体温度検出電極 27が設 けられるとともに、この液体温度検出電極 27に両端が電気的に接続されるように Ag 系樹脂とエポキシ系樹脂との混合物からなる樹脂材料をバインダーとするサーミスタ 力もなる液体温度検出抵抗層 28が設けられている。この液体温度検出抵抗層 28の 抵抗値は約 40k Ωである。ここで、一対の気体温度検出電極 25間の長さと、一対の 液体温度検出電極 27間の長さはほぼ同一とし、この長さを単位長さと定義する。絶 縁基板 21における液体温度検出電極 27と液体温度検出抵抗層 28は、絶縁基板 21 の下端に設けた屈曲部 22が設けられることにより、ほぼ同一高さになるように構成さ れている。さらに、液位検出電極 23、気体温度検出電極 25および液体温度検出電 極 27は、絶縁基板 21の一側面に設けられた配線パターン 29を介して外部電極 30と 電気的に接続されている。  [0037] The bent portion 22 of the insulating substrate 21 is provided with a pair of Ag liquid temperature detection electrodes 27, and an Ag-based resin and an epoxy are connected so that both ends are electrically connected to the liquid temperature detection electrodes 27. There is provided a liquid temperature detecting resistance layer 28 which also has a thermistor force using a resin material made of a mixture with a resin as a binder. The resistance value of the liquid temperature detecting resistor layer 28 is about 40 kΩ. Here, the length between the pair of gas temperature detection electrodes 25 and the length between the pair of liquid temperature detection electrodes 27 are substantially the same, and this length is defined as a unit length. The liquid temperature detection electrode 27 and the liquid temperature detection resistance layer 28 on the insulating substrate 21 are configured to have substantially the same height by providing the bent portion 22 provided at the lower end of the insulating substrate 21. Furthermore, the liquid level detection electrode 23, the gas temperature detection electrode 25, and the liquid temperature detection electrode 27 are electrically connected to the external electrode 30 via a wiring pattern 29 provided on one side surface of the insulating substrate 21.
[0038] 絶縁層 31は、絶縁基板 21の上面に設けた液位検出電極 23、液位検出抵抗層 24 、気体温度検出電極 25、気体温度検出抵抗層 26、液体温度検出電極 27および液 体温度検出抵抗層 28を覆うように設けられている。ヒーター層 32は絶縁層 31の上面 を蛇行するように設けられるとともに、回路パターン 33を介してヒーター電極 34と電 気的に接続されている。保護層 35はヒーター層 32の上面を覆うように設けられてい る。 36は金属製のケースで、このケース 36は金属製で絶縁基板 21を内側に収納す る。当接部材 37がケース 36の底面に取り付けられ、絶縁基板 21に設けられた屈曲 部 22を保持している。 [0038] The insulating layer 31 includes a liquid level detection electrode 23, a liquid level detection resistance layer 24, a gas temperature detection electrode 25, a gas temperature detection resistance layer 26, a liquid temperature detection electrode 27, and a liquid provided on the upper surface of the insulating substrate 21. It is provided so as to cover the temperature detection resistance layer 28. The heater layer 32 is provided so as to meander the upper surface of the insulating layer 31, and is electrically connected to the heater electrode 34 via the circuit pattern 33. Connected with care. The protective layer 35 is provided so as to cover the upper surface of the heater layer 32. 36 is a metal case, and this case 36 is made of metal and accommodates the insulating substrate 21 inside. A contact member 37 is attached to the bottom surface of the case 36 and holds the bent portion 22 provided on the insulating substrate 21.
[0039] 以上のように構成された本発明の実施の形態 2における液面検出センサについて 、次に、その製造方法を説明する。  Next, a manufacturing method of the liquid level detection sensor according to the second embodiment of the present invention configured as described above will be described.
[0040] まず、ポリイミド製の絶縁基板 21の一側面において、液位検出電極 23、気体温度 検出電極 25、液体温度検出電極 27、配線パターン 29、外部電極 30およびヒーター 電極 34を設ける位置に、厚膜印刷工法により Agペーストを印刷する。その後、約 25 0°Cで約 30分間焼成することにより、液位検出電極 23、気体温度検出電極 25、液体 温度検出電極 27、配線パターン 29、外部電極 30およびヒーター電極 34を形成する [0040] First, on one side of the insulating substrate 21 made of polyimide, at a position where the liquid level detection electrode 23, the gas temperature detection electrode 25, the liquid temperature detection electrode 27, the wiring pattern 29, the external electrode 30 and the heater electrode 34 are provided. Ag paste is printed by thick film printing method. Thereafter, the liquid level detection electrode 23, the gas temperature detection electrode 25, the liquid temperature detection electrode 27, the wiring pattern 29, the external electrode 30 and the heater electrode 34 are formed by baking at about 250 ° C. for about 30 minutes.
Yes
[0041] 次に、絶縁基板 21の上面において、液位検出抵抗層 24、気体温度検出抵抗層 2 6および液体温度検出抵抗層 28を設ける位置にサーミスタペーストを印刷する。その 後、約 270°Cで約 2時間焼成することにより、絶縁基板 21の上面に液位検出抵抗層 24、気体温度検出抵抗層 26および液体温度検出抵抗層 28を形成する。  Next, the thermistor paste is printed on the upper surface of the insulating substrate 21 at a position where the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 are provided. Thereafter, the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 are formed on the upper surface of the insulating substrate 21 by baking at about 270 ° C. for about 2 hours.
[0042] さらに、絶縁基板 21の一側面における配線パターン 29、液位検出抵抗層 24、気 体温度検出抵抗層 26、液体温度検出抵抗層 28、気体温度検出電極 25、液体温度 検出電極 27および液位検出電極 23の上面に絶縁層ペーストを印刷する。そして、 紫外線を照射して硬化させることにより、絶縁層 31を形成する。  [0042] Further, the wiring pattern 29 on one side of the insulating substrate 21, the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, the liquid temperature detection resistance layer 28, the gas temperature detection electrode 25, the liquid temperature detection electrode 27, and An insulating layer paste is printed on the upper surface of the liquid level detection electrode 23. Then, the insulating layer 31 is formed by curing by irradiating with ultraviolet rays.
[0043] 次に、絶縁層 31の上面において、ヒーター層 32を設ける位置にヒーターペーストを 印刷する。その後、約 150°Cで約 30分間焼成することにより、絶縁層 31の上面にヒ 一ター層 32を形成する。  Next, a heater paste is printed on the upper surface of the insulating layer 31 at a position where the heater layer 32 is provided. Thereafter, the heater layer 32 is formed on the upper surface of the insulating layer 31 by baking at about 150 ° C. for about 30 minutes.
[0044] さらに、絶縁基板 21およびヒーター層 32の上面に保護層ペーストを印刷する。そし て、紫外線を照射して硬化させることにより、絶縁基板 21およびヒーター層 32の上面 に保護層 35を形成する。  Furthermore, a protective layer paste is printed on the upper surfaces of the insulating substrate 21 and the heater layer 32. Then, the protective layer 35 is formed on the upper surfaces of the insulating substrate 21 and the heater layer 32 by curing by irradiating ultraviolet rays.
[0045] 最後に、絶縁基板 21をケース 36の内側に収納した後、ケース 36の下端部に当接 部材 37を取り付ける。この当接部材 37の取り付けにより、ケース 36の内側に収納さ れた絶縁基板 21の下端に設けられている屈曲部 22を当接部材 37で保持している。 よって、液体温度検出抵抗層 28と液体温度検出電極 27は、ほぼ同一高さになるよう に容易に形成される。 Finally, after the insulating substrate 21 is stored inside the case 36, the contact member 37 is attached to the lower end portion of the case 36. By attaching this contact member 37, it is stored inside the case 36. The bent portion 22 provided at the lower end of the insulating substrate 21 is held by the contact member 37. Therefore, the liquid temperature detection resistance layer 28 and the liquid temperature detection electrode 27 are easily formed so as to have substantially the same height.
[0046] 以上のように構成され、かつ製造された本発明の実施の形態 2における液面検出 センサについて、その動作を図面を参照しながら説明する。  The operation of the liquid level detection sensor according to the second embodiment of the present invention configured and manufactured as described above will be described with reference to the drawings.
[0047] 図 10は本発明の実施の形態 2に係る液面検出センサが動作する状態を示す側断 面図である。図 10に示すように、予めスチーム型電子レンジ(図示せず)等に使用さ れる熱伝導性のプラスチック容器 38に水 39を満たした後、ケース 36に収納された液 面検出センサをプラスチック容器 38に取り付ける。  FIG. 10 is a side sectional view showing a state in which the liquid level detection sensor according to Embodiment 2 of the present invention operates. As shown in FIG. 10, after filling a water conductive plastic container 38 used in a steam type microwave oven (not shown) in advance with water 39, the liquid level detection sensor housed in the case 36 is replaced with a plastic container. Attach to 38.
[0048] この状態において、絶縁基板 21におけるヒーター層 32に電圧が印加されると、ヒー ター層 32に流れる電流によりヒーター層 32からジュール熱が発生する。このジユー ル熱は絶縁層 31を介して液位検出抵抗層 24、気体温度検出抵抗層 26および液体 温度検出抵抗層 28に到達する。このとき、液位検出抵抗層 24のうちの液体に対向 する部分と気体に対向する部分とでは、熱放散定数の差により単位長さあたりの自 己発熱量に差が生じる。その結果、液位検出抵抗層 24のうちの気体に対向する部 分と液体に対向する部分とでは温度差が生じ、サーミスタの抵抗 温度特性により単 位長さあたりの抵抗値に差が生じる。  In this state, when a voltage is applied to the heater layer 32 in the insulating substrate 21, Joule heat is generated from the heater layer 32 due to the current flowing through the heater layer 32. This Julian heat reaches the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 through the insulating layer 31. At this time, there is a difference in the amount of self-heat generation per unit length due to the difference in heat dissipation constant between the portion of the liquid level detection resistance layer 24 facing the liquid and the portion facing the gas. As a result, a temperature difference occurs between the portion of the liquid level detection resistance layer 24 facing the gas and the portion facing the liquid, and the resistance value per unit length varies depending on the resistance temperature characteristics of the thermistor.
[0049] 図 11は本発明の実施の形態 2に係る液面検出センサの回路図である。図 11に示 すように、液位検出抵抗層 24、気体温度検出抵抗層 26および液体温度検出抵抗層 28に対して、 3つの定電流源 40により、一定の電流が供給される。この状態におい て、液位検出抵抗層 24、気体温度検出抵抗層 26および液体温度検出抵抗層 28に 発生する出力信号は増幅器 41により増幅された後、 AD変換器 42により、デジタノレ 信号からなる出力信号に変換される。その後、マイコン 43により、液位検出抵抗層 2 4、気体温度検出抵抗層 26および液体温度検出抵抗層 28からの各々のデジタル信 号を比較して演算することにより、プラスチック容器 38内の水 39の液面を検出する。  FIG. 11 is a circuit diagram of a liquid level detection sensor according to Embodiment 2 of the present invention. As shown in FIG. 11, a constant current is supplied from the three constant current sources 40 to the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28. In this state, output signals generated in the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 are amplified by the amplifier 41, and then output from the digital converter signal by the AD converter 42. Converted to a signal. Thereafter, the microcomputer 43 compares the digital signals from the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 to calculate the water 39 in the plastic container 38. Detect the liquid level.
[0050] 上記したように本発明の実施の形態 2に係る液面検出センサにおいては、液位検 出抵抗層 24を一対の液位検出電極 23に対して電気的に並列に接続される複数の 並列抵抗層 24aで構成している。よって、液位検出抵抗層 24を絶縁基板 21の上方 力も下方にわたって設けても、液位検出抵抗層 24全体としての断面積は小さい。従 つて、液位検出抵抗層 24の抵抗値は、気体温度検出抵抗層 26および液体温度検 出抵抗層 28の抵抗値とほぼ同一となる。従って、液位検出抵抗層 24の抵抗値によ る出力信号の増幅率を気体温度検出抵抗層 26および液体温度検出抵抗層 28の抵 抗値による出力信号の増幅率よりも大きくする必要はなくなる。すなわち、液位検出 抵抗層 24、気体温度検出抵抗層 26および液体温度検出抵抗層 28の増幅器 41の 増幅率は、ほぼ同一とすることができる。この結果、液位検出抵抗層 24に発生する 出力信号が安定した状態で得られる。また、複数の並列抵抗層 24aは鉛直に対して 同一の角度に傾けて設置されている。ゆえに、被測定溶液である水 39の液面の変 化に対して、液位検出抵抗層 24に発生する出力信号をアナログ信号として連続的 に出力できる。 [0050] As described above, in the liquid level detection sensor according to Embodiment 2 of the present invention, a plurality of liquid level detection resistance layers 24 are electrically connected to the pair of liquid level detection electrodes 23 in parallel. The parallel resistance layer 24a. Therefore, the liquid level detection resistance layer 24 is located above the insulating substrate 21. Even if the force is provided downward, the cross-sectional area of the entire liquid level detection resistance layer 24 is small. Therefore, the resistance value of the liquid level detection resistance layer 24 is almost the same as the resistance value of the gas temperature detection resistance layer 26 and the liquid temperature detection resistance layer 28. Therefore, the amplification factor of the output signal due to the resistance value of the liquid level detection resistance layer 24 need not be larger than the amplification factor of the output signal due to the resistance values of the gas temperature detection resistance layer 26 and the liquid temperature detection resistance layer 28. . That is, the amplification factors of the amplifier 41 of the liquid level detection resistance layer 24, the gas temperature detection resistance layer 26, and the liquid temperature detection resistance layer 28 can be made substantially the same. As a result, an output signal generated in the liquid level detection resistance layer 24 is obtained in a stable state. In addition, the plurality of parallel resistance layers 24a are installed at the same angle with respect to the vertical. Therefore, the output signal generated in the liquid level detection resistance layer 24 can be continuously output as an analog signal with respect to the change in the liquid level of the water 39 as the solution to be measured.
[0051] また、本発明の実施の形態 2に係る液面検出センサにおいては、液位検出抵抗層 24における隣り合う並列抵抗層の端部 24bが、水平方向に対して互いに重なり合う。 よって、液位検出抵抗層 24を水平方向で切断したときの断面積力 上方から下方に わたってほぼ同一になる。従って、被測定溶液である水 39の液面の変化量に比例し て液位検出抵抗層 24の抵抗値は変化し、液位検出抵抗層 24に発生する出力信号 の直線性も向上する。  [0051] In the liquid level detection sensor according to Embodiment 2 of the present invention, the end portions 24b of the adjacent parallel resistance layers in the liquid level detection resistance layer 24 overlap each other in the horizontal direction. Therefore, the cross-sectional area force when the liquid level detection resistance layer 24 is cut in the horizontal direction is substantially the same from above to below. Therefore, the resistance value of the liquid level detection resistance layer 24 changes in proportion to the amount of change in the liquid level of the water 39 that is the solution to be measured, and the linearity of the output signal generated in the liquid level detection resistance layer 24 is also improved.
産業上の利用可能性  Industrial applicability
[0052] 本発明に係る液面検出センサは、被測定溶液の液面が急激に変化した場合でも、 液面検出の測定が瞬時に行えて時間的応答性が良好である液面検出センサを提供 すること力 Sできる。また、本発明に係る液面検出センサは、液位検出抵抗層の抵抗値 による出力信号の増幅率を気体温度検出抵抗層および液体温度検出抵抗層の抵 抗値による出力信号の増幅率よりも大きくする必要はなぐ液位検出抵抗層に発生 する出力信号も安定した状態で得られるので、特にスチーム型電子レンジに使用さ れる水タンクの液面を検出する液面検出センサにおいて有用である。  [0052] The liquid level detection sensor according to the present invention is a liquid level detection sensor that can perform liquid level detection instantaneously and has good temporal response even when the liquid level of the solution to be measured changes suddenly. The ability to provide S. In addition, the liquid level detection sensor according to the present invention has an amplification factor of the output signal based on the resistance value of the liquid level detection resistance layer, which is greater than the amplification factor of the output signal based on the resistance values of the gas temperature detection resistance layer and the liquid temperature detection resistance layer. Since the output signal generated in the liquid level detection resistance layer that needs to be increased can be obtained in a stable state, it is particularly useful in a liquid level detection sensor for detecting the liquid level of a water tank used in a steam type microwave oven.

Claims

請求の範囲 The scope of the claims
[1] 長手方向に立設された絶縁基板と、 [1] an insulating substrate erected in the longitudinal direction;
前記絶縁基板の長手方向の一側面に設けられた液位検出抵抗層と、  A liquid level detection resistance layer provided on one side surface in the longitudinal direction of the insulating substrate;
前記液位検出抵抗層の両端に設けられた一対の液位検出電極と、  A pair of liquid level detection electrodes provided at both ends of the liquid level detection resistance layer;
前記絶縁基板の一側面の上方に位置して設けられた気体温度検出抵抗層と、 前記気体温度検出抵抗層の両端に設けられた一対の気体温度検出電極と、 前記絶縁基板の一側面の下方に位置して設けられた液体温度検出抵抗層と、 前記液体温度検出抵抗層の両端に設けられた一対の液体温度検出電極と、 前記液位検出抵抗層、前記気体温度検出抵抗層および前記液体温度検出抵抗層 に熱を供給するヒーター層と、  A gas temperature detecting resistor layer provided above one side surface of the insulating substrate; a pair of gas temperature detecting electrodes provided at both ends of the gas temperature detecting resistor layer; and below one side surface of the insulating substrate. A liquid temperature detection resistance layer provided at a position of the liquid temperature detection resistance layer, a pair of liquid temperature detection electrodes provided at both ends of the liquid temperature detection resistance layer, the liquid level detection resistance layer, the gas temperature detection resistance layer, and the liquid A heater layer for supplying heat to the temperature detection resistance layer;
前記液位検出抵抗層、前記液位検出電極、前記気体温度検出抵抗層、前記気体 温度検出電極、前記液体温度検出抵抗層、前記液体温度検出電極および前記ヒー ター層を覆うように設けた保護層と、  A protection provided to cover the liquid level detection resistance layer, the liquid level detection electrode, the gas temperature detection resistance layer, the gas temperature detection electrode, the liquid temperature detection resistance layer, the liquid temperature detection electrode, and the heater layer. Layers,
を備え、  With
前記ヒーター層を前記液位検出抵抗層、前記液体温度検出抵抗層および前記気体 温度検出抵抗層と前記保護層との間に設けたことを特徴とする  The heater layer is provided between the liquid level detection resistance layer, the liquid temperature detection resistance layer, and the gas temperature detection resistance layer and the protective layer.
液面検出センサ。  Liquid level detection sensor.
[2] 前記絶縁基板における前記液体温度検出抵抗層と前記液体温度検出電極を設け た部分に直角に折り曲げられた屈曲部をさらに備え、  [2] It further includes a bent portion bent at a right angle to a portion where the liquid temperature detection resistance layer and the liquid temperature detection electrode are provided on the insulating substrate,
前記液体温度検出抵抗層と前記液体温度検出電極とが同一高さになるように構成さ れたことを特徴とする  The liquid temperature detection resistance layer and the liquid temperature detection electrode are configured to have the same height.
請求項 1に記載の液面検出センサ。  The liquid level detection sensor according to claim 1.
[3] 前記絶縁基板を収納するケースをさらに備え、 [3] It further comprises a case for storing the insulating substrate,
前記ケースの底面に前記絶縁基板と当接する当接部材を取り付けることにより、前記 当接部材が前記屈曲部を保持することを特徴とする  The contact member holds the bent portion by attaching a contact member that contacts the insulating substrate to a bottom surface of the case.
請求項 2に記載の液面検出センサ。  The liquid level detection sensor according to claim 2.
[4] 前記液位検出抵抗層を一対の前記液位検出電極に対して電気的に並列に接続さ れる複数の並列抵抗層で構成するとともに、前記並列抵抗層を鉛直に対して同一の 角度に傾けて設置したことを特徴とする [4] The liquid level detection resistance layer includes a plurality of parallel resistance layers electrically connected in parallel to the pair of liquid level detection electrodes, and the parallel resistance layer is the same with respect to the vertical. It is characterized by being installed at an angle
請求項 1に記載の液面検出センサ。 The liquid level detection sensor according to claim 1.
前記液位検出抵抗層における隣り合う前記並列抵抗層の端部が、水平方向に対し て互いに重なり合うように構成し、 The ends of the parallel resistance layers adjacent to each other in the liquid level detection resistance layer are configured to overlap each other in the horizontal direction,
前記液位検出抵抗層を水平方向で切断したときの断面積が同一であることを特徴と する The liquid level detection resistance layer has the same cross-sectional area when cut in the horizontal direction.
請求項 4に記載の液面検出センサ。 The liquid level detection sensor according to claim 4.
PCT/JP2007/065394 2006-08-10 2007-08-07 Liquid surface sensor WO2008018425A1 (en)

Applications Claiming Priority (4)

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JP2006-218063 2006-08-10
JP2006218064A JP2008039727A (en) 2006-08-10 2006-08-10 Liquid level detection sensor
JP2006218063A JP2008039726A (en) 2006-08-10 2006-08-10 Liquid level detection sensor
JP2006-218064 2006-08-10

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013205060A (en) * 2012-03-27 2013-10-07 Mitsubishi Heavy Ind Ltd Water level gauge and nuclear facility
WO2021080611A1 (en) * 2019-10-25 2021-04-29 Hewlett-Packard Development Company, L.P. Sensor circuitry package for replaceable print apparatus component

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH01209322A (en) * 1988-02-17 1989-08-23 Matsushita Electric Ind Co Ltd Fuel liquid level detecting device
US4890492A (en) * 1988-09-06 1990-01-02 Emhart Industries, Inc. Differential pressure level sensor with temperature sensing elements
JP2006126030A (en) * 2004-10-29 2006-05-18 Matsushita Electric Ind Co Ltd Liquid level sensor
JP2007218601A (en) * 2006-02-14 2007-08-30 Matsushita Electric Ind Co Ltd Liquid level sensor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01209322A (en) * 1988-02-17 1989-08-23 Matsushita Electric Ind Co Ltd Fuel liquid level detecting device
US4890492A (en) * 1988-09-06 1990-01-02 Emhart Industries, Inc. Differential pressure level sensor with temperature sensing elements
JP2006126030A (en) * 2004-10-29 2006-05-18 Matsushita Electric Ind Co Ltd Liquid level sensor
JP2007218601A (en) * 2006-02-14 2007-08-30 Matsushita Electric Ind Co Ltd Liquid level sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013205060A (en) * 2012-03-27 2013-10-07 Mitsubishi Heavy Ind Ltd Water level gauge and nuclear facility
WO2021080611A1 (en) * 2019-10-25 2021-04-29 Hewlett-Packard Development Company, L.P. Sensor circuitry package for replaceable print apparatus component

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