WO2008010850A3 - Transparent and conductive nanostructure-film pixel electrode and method of making same - Google Patents

Transparent and conductive nanostructure-film pixel electrode and method of making same Download PDF

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Publication number
WO2008010850A3
WO2008010850A3 PCT/US2007/000921 US2007000921W WO2008010850A3 WO 2008010850 A3 WO2008010850 A3 WO 2008010850A3 US 2007000921 W US2007000921 W US 2007000921W WO 2008010850 A3 WO2008010850 A3 WO 2008010850A3
Authority
WO
WIPO (PCT)
Prior art keywords
pixel electrode
transparent
making same
conductive nanostructure
nanostructure
Prior art date
Application number
PCT/US2007/000921
Other languages
French (fr)
Other versions
WO2008010850A2 (en
Inventor
Young-Bae Park
George Gruner
Liangbing Hu
Original Assignee
Unidym
Young-Bae Park
George Gruner
Liangbing Hu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unidym, Young-Bae Park, George Gruner, Liangbing Hu filed Critical Unidym
Priority to JP2009520731A priority Critical patent/JP5261384B2/en
Publication of WO2008010850A2 publication Critical patent/WO2008010850A2/en
Publication of WO2008010850A3 publication Critical patent/WO2008010850A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

A pixel electrode is provided, comprising a nanostructure-film deposited over an active matrix substrate, such that the pixel electrode makes electrical contact with an underlying layer. Similarly, auxiliary data pads and auxiliary gate pads are provided, which also comprise nanostructure-films deposited over an active matrix substrate, such that they make electrical contact with underlying layers.
PCT/US2007/000921 2006-07-17 2007-01-16 Transparent and conductive nanostructure-film pixel electrode and method of making same WO2008010850A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009520731A JP5261384B2 (en) 2006-07-17 2007-01-16 Transparent conductive nanostructured film pixel electrode and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US83121206P 2006-07-17 2006-07-17
US60/831,212 2006-07-17

Publications (2)

Publication Number Publication Date
WO2008010850A2 WO2008010850A2 (en) 2008-01-24
WO2008010850A3 true WO2008010850A3 (en) 2009-04-02

Family

ID=38957239

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/000921 WO2008010850A2 (en) 2006-07-17 2007-01-16 Transparent and conductive nanostructure-film pixel electrode and method of making same

Country Status (3)

Country Link
JP (1) JP5261384B2 (en)
KR (1) KR20090040435A (en)
WO (1) WO2008010850A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5388021B2 (en) * 2008-04-08 2014-01-15 株式会社クラレ Liquid crystal cell and liquid crystal display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030136971A1 (en) * 2001-12-24 2003-07-24 Samsung Electronics Co., Ltd. Thin film transistor array panel for display and manufacturing method thereof
US20040055997A1 (en) * 2001-10-23 2004-03-25 Hong-Scik Park Etchant for wires, a method for manufacturing the wires using the etchant, a thin film transistor array substrate and a method for manufacturing the same including the method
US6988925B2 (en) * 2002-05-21 2006-01-24 Eikos, Inc. Method for patterning carbon nanotube coating and carbon nanotube wiring

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3225772B2 (en) * 1995-01-30 2001-11-05 株式会社日立製作所 Manufacturing method of liquid crystal display device
JP4207398B2 (en) * 2001-05-21 2009-01-14 富士ゼロックス株式会社 Method for manufacturing wiring of carbon nanotube structure, wiring of carbon nanotube structure, and carbon nanotube device using the same
KR100870016B1 (en) * 2002-08-21 2008-11-21 삼성전자주식회사 A thin film transistor array panel, a liquid crystal display including the panel
KR100890024B1 (en) * 2002-09-18 2009-03-25 삼성전자주식회사 A liquid crystal display
US20060072047A1 (en) * 2002-12-06 2006-04-06 Kanetaka Sekiguchi Liquid crystal display
CN100392828C (en) * 2003-02-06 2008-06-04 株式会社半导体能源研究所 Method for manufacturing display device
JP4269748B2 (en) * 2003-04-01 2009-05-27 セイコーエプソン株式会社 Manufacturing method of display device
JP4614652B2 (en) * 2003-11-27 2011-01-19 株式会社半導体エネルギー研究所 Thin film transistor manufacturing method and display device manufacturing method
JP2006171336A (en) * 2004-12-15 2006-06-29 Takiron Co Ltd Transparent electrode member for image display, and the image display device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040055997A1 (en) * 2001-10-23 2004-03-25 Hong-Scik Park Etchant for wires, a method for manufacturing the wires using the etchant, a thin film transistor array substrate and a method for manufacturing the same including the method
US20030136971A1 (en) * 2001-12-24 2003-07-24 Samsung Electronics Co., Ltd. Thin film transistor array panel for display and manufacturing method thereof
US6988925B2 (en) * 2002-05-21 2006-01-24 Eikos, Inc. Method for patterning carbon nanotube coating and carbon nanotube wiring

Also Published As

Publication number Publication date
JP5261384B2 (en) 2013-08-14
KR20090040435A (en) 2009-04-24
WO2008010850A2 (en) 2008-01-24
JP2009544058A (en) 2009-12-10

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