WO2008010461A1 - Transparent electromagnetic shielding film and process for producing the same - Google Patents

Transparent electromagnetic shielding film and process for producing the same Download PDF

Info

Publication number
WO2008010461A1
WO2008010461A1 PCT/JP2007/063978 JP2007063978W WO2008010461A1 WO 2008010461 A1 WO2008010461 A1 WO 2008010461A1 JP 2007063978 W JP2007063978 W JP 2007063978W WO 2008010461 A1 WO2008010461 A1 WO 2008010461A1
Authority
WO
WIPO (PCT)
Prior art keywords
electromagnetic wave
wave shielding
transparent electromagnetic
shielding film
silver
Prior art date
Application number
PCT/JP2007/063978
Other languages
French (fr)
Japanese (ja)
Inventor
Kazuhiro Miyazawa
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Publication of WO2008010461A1 publication Critical patent/WO2008010461A1/en

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073Shielding materials
    • H05K9/0094Shielding materials being light-transmitting, e.g. transparent, translucent
    • H05K9/0096Shielding materials being light-transmitting, e.g. transparent, translucent for television displays, e.g. plasma display panel

Definitions

  • the present invention relates to a transparent electromagnetic wave shielding film that shields electromagnetic waves generated from electronic devices such as mobile phones, microwave ovens, CRTs, and flat panel displays, and a method for manufacturing the same.
  • Electromagnetic wave shielding materials in which a conductive pattern is produced by performing plating or the like as a catalyst are known (see, for example, Patent Documents 7 to 9). 0 In these materials, a photosensitive silver halide emulsion is used as a support. The power to use a binder to hold on It is preferred to increase the AgZ binder ratio as much as possible to increase conductivity! /
  • Patent Document 1 Japanese Unexamined Patent Application Publication No. 2004-179405
  • Patent Document 2 JP-A-5-327274
  • Patent Document 3 Japanese Patent Laid-Open No. 11-170421
  • Patent Document 4 Japanese Patent Laid-Open No. 2003-23290
  • Patent Document 5 Japanese Unexamined Patent Application Publication No. 2004-172041
  • Patent Document 6 Japanese Patent Laid-Open No. 2005-183059
  • Patent Document 7 Japanese Unexamined Patent Application Publication No. 2004-221564
  • Patent Document 8 Japanese Patent Application Laid-Open No. 2004-221565
  • Patent Document 9 Pamphlet of International Publication No. 01Z51276
  • the present invention has been made in view of the above problems, and its purpose is to provide a transparent electromagnetic wave shielding excellent in electromagnetic wave shielding performance, having high transparency, and having excellent durability against changes in temperature and humidity. To provide a film.
  • the inventors of the present invention have studied the method of producing a conductive mesh using a silver halide light-sensitive material while paying attention to the halogen-silver light-sensitive material.
  • the binder By designing the binder to hold the substrate on the support so that the absolute amount of the binder alone is within a certain range, it maintains durability and is resistant to changes in temperature and humidity. It was found that an excellent transparent electromagnetic wave shielding film can be obtained.
  • the object of the present invention is achieved by the following transparent electromagnetic wave shielding film.
  • a transparent electromagnetic wave shielding film produced by subjecting a photosensitive material having a layer comprising at least a photosensitive silver halide silver and a binder on a support to a development process after exposure.
  • the content of the photosensitive Harogeni ⁇ in the photosensitive material is lgZm less than 2 0. 05G / m 2 or more in terms of silver, and the amount of the binder is 2 hereinafter LOmgZm 2 or 0. 2GZm
  • LOmgZm 2 or 0. 2GZm A transparent electromagnetic wave shielding film characterized.
  • the transparent electromagnetic wave shielding film is subjected to physical development or metal plating after exposure and development, and the amount of metal applied by physical development or metal plating exposes and develops the photosensitive material.
  • the transparent electromagnetic wave shielding film according to 1 above which is 10 to 100 times in terms of mass with respect to the developed silver amount obtained by the above.
  • the transparent electromagnetic wave shielding film is characterized in that a value obtained by dividing the content of silver halide (g / m 2 ) by the average grain size of silver halide ( ⁇ m) is 6 or more and 25 or less. 3.
  • the transparent electromagnetic wave shielding film is subjected to oxidation after exposure and development. 4.
  • the transparent electromagnetic wave shielding film has an antireflection layer on the opposite side of the layer having the conductive pattern to the layer having the conductive pattern, and the protective film is formed after the antireflection layer is formed.
  • the transparent electromagnetic wave shielding film of the present invention comprises a photosensitive material having at least a layer composed of a photosensitive halogenated silver and a binder on a support.
  • the content is 0.05 g / m 2 or more and less than lg / m 2 in terms of silver, and the amount of the binder is 1 Omg / m 2 or more and 0.2 g / m 2 or less.
  • a silver halide emulsion-containing layer containing a light-sensitive silver halide silver and a binder, which will be described later, is provided on a support.
  • a film agent, a hardener, an activator and the like can be contained.
  • the effect of the present invention can be obtained when the content of the photosensitive halogenated silver is 0.05 g / m 2 or more and less than lg Zm 2 in terms of silver.
  • the content of the photosensitive halogen silver is less than 0.05 gZm 2 , it is difficult to obtain sufficient electromagnetic wave shielding performance. This is presumed to be because the amount of developed silver nuclei serving as a catalyst for the physical development or metal plating process described later is insufficient, and an effective conductive mesh is formed.
  • the photosensitive silver halide content is lgZm 2 or more, the amount of halogenated silver relative to the binder is relatively large, so that the coating becomes fragile and immediately maintains sufficient coating strength. It becomes difficult.
  • the effect of the present invention can be obtained when the binder amount of the light-sensitive material is 1 OmgZm 2 or more and 0.2 gZm 2 or less.
  • the amount of noinder is less than 1 Omg / m 2
  • the amount of halogen silver relative to the noinder becomes relatively large, so that the film becomes fragile and it is difficult to immediately maintain a sufficient film strength.
  • the Noinder amount is more than 0.2 gZ m 2 , the distance between the grains of the photosensitive halogen-molybdenum grains becomes large, so that a current silver network is formed, and an effective conductive mesh is formed.
  • the durability against changes in temperature and humidity becomes insufficient, and the effects of the present invention cannot be obtained.
  • composition of the silver halide silver grains used in the present invention is as follows: silver chloride, silver bromide, silver chlorobromide, iodine Silver bromide, silver chloroiodobromide, silver chloroiodide, etc. may have any halogen composition Force To obtain highly conductive metal silver, fine grains with high sensitivity are preferred. Silver halide grains are preferably used. If a large amount of iodine is contained, the sensitivity is high and fine particles can be obtained.
  • the contact area between the developed silver particles becomes as large as possible.
  • the smaller the size of the halogen silver silver particles the better to increase the surface area ratio, but the particles that are too small aggregate to form large agglomerates, and in that case, the contact area decreases on the contrary.
  • the average grain size of the silver halide grains is preferably 0.03 to 0.3 m, more preferably 0.01 to 0.5 m in terms of a sphere equivalent diameter.
  • the spherical equivalent diameter of a halogenated silver particle represents the diameter of a grain having a spherical shape and the same volume.
  • the average particle size of the halogenated silver particles is the temperature, pAg, pH, addition rate of the silver ion solution and the halogen solution, the particle size control agent (for example, 1 Fe-Lu 5 mercaptotetrazole, 2 —Mercaptobenzimidazole, benztriazole, tetrazaindene compounds, nucleic acid derivatives, thioether compounds, etc.) can be combined and controlled as appropriate.
  • the particle size control agent for example, 1 Fe-Lu 5 mercaptotetrazole, 2 —Mercaptobenzimidazole, benztriazole, tetrazaindene compounds, nucleic acid derivatives, thioether compounds, etc.
  • the value obtained by dividing the silver halide content (gZm 2 ) by the average grain size ( ⁇ m) of silver halide is 6 or more and 25 or less.
  • this value becomes larger than 25, and in this case, the silver halide grains slip off from the coating immediately on the edge when the film is cut. Tend to be more likely to occur.
  • this value becomes smaller than 6 and, in this case, the number of photosensitive silver halide grains in the unit area decreases. This is because it tends to decrease! /.
  • the shape of the halogen silver halide grains is not particularly limited.
  • spherical, cubic, flat plate hexagonal flat plate, triangular flat plate, quadrangular flat plate, etc.
  • octahedral shape etc. It can be in various shapes such as a 14-sided shape.
  • tabular grains having an aspect ratio of 2 or more, 4 or more, and further 8 to 16 can be preferably used.
  • particle The size distribution is not particularly limited, but a narrow distribution is preferable from the viewpoint of enhancing the transparency while maintaining high conductivity while sharply reproducing the outline of the pattern during pattern formation by exposure.
  • the particle size distribution of the halogen silver halide grains used in the light-sensitive material according to the present invention is preferably monodispersed halogen silver halide grains having a coefficient of variation of 0.22 or less, more preferably 0.15 or less.
  • the variation coefficient is a coefficient representing the breadth of the particle size distribution, and is defined by the following equation.
  • the halogen silver halide grains used in the present invention may further contain other elements.
  • metal ions used to obtain a high contrast emulsion.
  • iron ions, rhodium ions, the first 8-10 metals ions such as ruthenium ions and Irijiu Ion preferably used because the difference between the exposed and unexposed portions in the generation of metallic silver image is likely clearly occur.
  • Transition metal ions can be added to a halogenated silver emulsion in the form of a salt complex.
  • Transition metal ions typified by rhodium ions and iridium ions can also be compounds having various ligands. Examples of such ligands include cyanide ions, halogen ions, thiocyanate ions, nitrocinole ions, water, hydroxide ions, and the like. Specific examples of the compound include potassium bromide rhodate and potassium iridate.
  • the metal compound is added before the formation of silver halide grains, during the formation of halogenated silver grains, after the formation of halogenated silver grains, etc. What is necessary is just to add in the arbitrary places in each process during physical ripening.
  • the heavy metal compound solution can be continuously formed over a part of the particle forming process.
  • Chemical sensitization in order to further improve the sensitivity, chemical sensitization performed in a photographic emulsion is performed. You can also. Chemical sensitization includes, for example, noble metal sensitization such as gold, palladium and platinum sensitization, chalcogen sensitization such as iodo sensitization with inorganic or organic compounds, and reduction sensitization such as sodium chloride tin and hydrazine. Can be used.
  • noble metal sensitization such as gold, palladium and platinum sensitization
  • chalcogen sensitization such as iodo sensitization with inorganic or organic compounds
  • reduction sensitization such as sodium chloride tin and hydrazine.
  • the silver halide grains are subjected to spectral sensitization.
  • Spectral sensitizing dyes include cyanine, carbocynin, dicarboyanine, complex cyanine, hemisyanine, styryl dye, merocyanine, complex melocyanin, holopora single dye, etc., which are used in the industry.
  • the spectral sensitizing dye can be used alone or in combination.
  • Particularly useful dyes are cyanine dyes, merocyanine dyes, and complex merocyanine dyes.
  • any of the nuclei commonly used in cyanine dyes can be used as the basic heterocyclic ring nucleus.
  • the merocyanine dye or the complex merocyanine dye includes a pyrazoline-5-one nucleus, a thiohydantoin nucleus, a 2 thoxazolidine 2,4 dione nucleus, a thiazolidine 2,4 dione nucleus, a rhodanine as a nucleus having a ketomethylene structure.
  • 5 to 6-membered heteronuclear ring nuclei such as nucleus and thiobarbituric acid nucleus can be applied.
  • sensitizing dyes may be used alone or in combination.
  • sensitizing dyes is often used for the purpose of supersensitization.
  • sensitizing dyes in a silver halide silver emulsion, they may be dispersed directly in the emulsion, or water, methanol, propanol, methyl mouthsolve, 2, 2, 3, It may be dissolved in a solvent such as 3-tetrafluoropropanol alone or in a mixed solvent and added to the L agent.
  • a solvent such as 3-tetrafluoropropanol alone or in a mixed solvent and added to the L agent.
  • an acid or a base is allowed to coexist to form an aqueous solution. 822, 135, 4, 006, 025, etc.
  • water or a hydrophilic colloid-dispersed solution may be added to the emulsion after being dissolved in a solvent substantially immiscible with water such as phenoxyethanol.
  • the dispersion may be directly dispersed in a hydrophilic colloid and the dispersion may be added to the emulsion.
  • the silver halide grains are uniformly dispersed, and the silver halide grains are supported on the support, and the adhesiveness between the silver halide emulsion-containing layer and the support.
  • a binder is used for the purpose of ensuring the above.
  • the binder that can be used in the present invention any of a water-insoluble polymer and a water-soluble polymer that are not particularly limited can be used. From the viewpoint of improving developability, a water-soluble polymer can be used. I like it.
  • hydrophilic colloids such as gelatin derivatives, graft polymers of gelatin and other polymers, proteins other than gelatin, sugar derivatives, cellulose derivatives, synthetic hydrophilic polymer substances such as mono- or copolymers Can be used.
  • an ultraviolet absorber in order to avoid deterioration of the electromagnetic wave shielding film due to ultraviolet rays.
  • the ultraviolet absorber known ultraviolet absorbers such as salicylic acid compounds, benzophenone compounds, benzotriazole compounds, S triazine compounds, cyclic imino ester compounds and the like can be preferably used. Of these, benzophenone compounds, benzotriazole compounds, and cyclic imino ester compounds are preferred. As what is mix
  • benzotriazoles are preferably used as ultraviolet absorbers.
  • a general formula [III 3] described in JP-A-1-250944 can be mentioned.
  • compounds described in Japanese Patent Publication No. 64-66646 are preferably used as ultraviolet absorbers.
  • UV-1L to UV-27L described in JP-A-63-187240 compounds represented by general formula [I] described in JP-A-41633, JP-A-5-
  • the compounds represented by the general formulas (1) and (II) described in Japanese Patent No. 165144 are preferably used.
  • These ultraviolet absorbers are, for example, high boiling points represented by phthalates such as dioctyl phthalate, di-decyl phthalate, and dibutyl phthalate, and phosphate esters such as tricresyl phosphate and trioctyl phosphate.
  • An embodiment in which it is added in a dispersed form in an organic solvent is preferably used.
  • an embodiment in which these ultraviolet absorbers are directly added to the support is also preferably used. In this case, for example, an embodiment described in JP-T-2004-531611 can also be preferably used.
  • blackening treatment from the viewpoint of preventing reflection of external light on the film surface.
  • a transparent electromagnetic wave shielding film that has undergone such blackening treatment is used in a display such as a PDP, it is possible to reduce the decrease in contrast due to reflection of external light and to make the screen color tone black when not in use. It is preferable that it can be maintained.
  • the black wrinkle processing method known methods without particular limitation can be used alone or in combination as appropriate.
  • the outermost surface of the conductive pattern when the outermost surface of the conductive pattern is also made of metallic copper, it can be immersed in an aqueous solution containing sodium chlorite, sodium hydroxide, or trisodium phosphate and oxidized, or copper pyrophosphate, A method of blackening by immersing in an aqueous solution containing potassium pyrophosphate and ammonia and performing electrolytic plating can be preferably used.
  • the outermost layer of the conductive pattern is made of a nickel-phosphorus alloy film, an acidic blackening solution containing copper (II) chloride or copper sulfate (11), nickel chloride or sulfuric acid-nickel, and hydrochloric acid.
  • the method of immersing in can be preferably used.
  • black wrinkle processing is also possible by a method of roughening the surface.
  • the blackening method using oxidation is preferred to the finer surface.
  • a method in which the photosensitive material is a high contrast is preferred.
  • a high silver salt content is used to narrow the particle size distribution.
  • a hydrazine compound is a compound having an NHNH group, and a typical one is represented by the following general formula (1).
  • each T represents an optionally substituted aryl group or heterocyclic group.
  • the aryl group represented by T includes a benzene ring or a naphthalene ring, and this ring may have a substituent.
  • a linear or branched alkyl group preferably having a carbon number of 1 To 20 methyl group, ethyl group, isopropyl group, n-dodecyl group, etc.
  • alkoxy group preferably methoxy group having 2 to 21 carbon atoms, ethoxy group etc.
  • aliphatic isylamino group preferably 2 to 21 carbon atoms
  • aromatic isylamino groups, etc. in addition to these, for example, the substituted or unsubstituted aromatic rings as described above are —CONH—, —O—, -SO NH—, — NHCONH—, —CH
  • V is a hydrogen atom, an optionally substituted alkyl group (methyl group, ethyl group, butyl, trifluoromethyl group, etc.), aryl group (phenyl group, naphthyl group), heterocyclic group (pyridyl group, piperidyl group, Pyrrolidyl group, furanyl group, thiophene group, pyrrole group and the like).
  • the hydrazine compound described above can be synthesized with reference to the description in US Pat. No. 4,269,929.
  • the hydrazine compound can be contained in the halogen-containing silver particle-containing layer, in the hydrophilic colloid layer adjacent to the halogen-containing silver particle-containing layer, or in another hydrophilic colloid layer.
  • H-1 1-trifluoromethylcarbole 2— ⁇ [4— (3-n-butylureido) phenol] ⁇ hydrazine
  • H 2 l Trifluoromethyl carboru 2- ⁇ 4- [2- (2, 4-Gee 61: 1; -Pentylphenoxy) butyramide] phenol ⁇ hydrazine
  • an amine compound or a pyridine compound can be preferably used in order to enhance the reducing action of hydrazine.
  • the amine compound that promotes the reduction action of the hydrazine compound it is particularly preferable that the molecule has at least one piperidine ring or pyrrolidine ring, at least one thioether bond, and at least two ether bonds. .
  • pyridinium compounds and phosphonium compounds can be preferably used in addition to the above-mentioned amine compounds. Since the o-um compound is positively charged, it is adsorbed on the negatively charged halogen-molybdenum grains and promotes electron injection from the developing agent at the time of image formation, thereby promoting high contrast. It is thought to do.
  • pyridinium compounds reference can be made to the bispyridium compounds disclosed in JP-A-5-53231 and JP-A-6-242534.
  • Particularly preferred pyridi-um compounds are those that are linked at the 1st or 4th position of the pyridium to form a bispyridumum! /, is there.
  • the salt chlorine ion or bromine ion is preferred as a halogen ion, and in addition, a force such as boron tetrafluoride ion, perchlorate ion, etc. Chlorine ion or 4 fluorine boron ion is preferred.
  • Hidorajini ⁇ thereof, Amini ⁇ thereof, pyrid - ⁇ beam compounds, and Tetorazoriumu compound per mol of silver halide 1 X 10- 6 ⁇ 5 X 10- 2 mol preferably tool especially 1 to contain X 10 one 4 ⁇ 2 X 10- 2 mol is preferred. It is easy to adjust the addition amount of these compounds to increase the degree of contrast ⁇ to 6 or more.
  • These compounds are used by being added to a layer containing halogenated particles or another hydrophilic colloid layer. If it is water-soluble, it is added to an aqueous solution, and if it is water-insoluble, it is added to a silver halide grain solution or hydrophilic colloid solution as a solution of an organic solvent miscible with water, such as alcohols, esters, and ketones. That's fine. Further, when it is not soluble in these organic solvents, it can be added as fine particles having a size of 0.01 to 10 / ⁇ ⁇ by a ball mill, a sand mill, a jet mill or the like.
  • a technique of solid dispersion of a dye as a photographic additive can be preferably applied.
  • a desired particle size can be obtained using a dispersing machine such as a ball mill, a planetary rotating ball mill, a vibrating ball mill, or a jet mill.
  • a surfactant is used at the time of dispersion, stability after dispersion can be improved.
  • a support for example, a cellulose ester film, a polyester film, a polycarbonate film, a polyarylate film, a polysulfone (including polyethersulfone) film, a polyester film such as polyethylene terephthalate and polyethylene naphthalate , Polyethylene film, Polypropylene film, Cellophane, Senorelose diacetate Finolem, Senorelose acetate butyrate phenolome, Polyvinylidene chloride film, Polybulol alcohol film, Ethylene butyl alcohol film, Syndiotactic polystyrene film , Polycarbonate film, norbornene resin film, polymethylpentene film, polyether ketone film, Li polyether ketone imide film, a polyamide film, a fluorine ⁇ film, a nylon film, polymethyl methacrylate Tari acetate film or an acrylic film or the like.
  • quartz glass and soda glass are also be also used to give quartz glass and soda glass.
  • cellulose triacetate film polycarbonate film, polysulfone (including polyethersulfone), and polyethylene terephthalate film are preferably used.
  • a cellulose ester film or a polyester film as the support from the viewpoints of transparency, isotropicity, adhesiveness, and the like.
  • the electromagnetic wave shielding material of the present invention is used for a display screen of a display, high transparency is required. Therefore, it is desirable that the support itself has high transparency.
  • the average transmittance of the plastic film or glass plate in the entire visible light region is preferably 85 to 100%, more preferably 90 to: LOO%.
  • the color tone adjusting agent the plastic film or glass plate that has been colored to such an extent that the object of the present invention is not hindered is used.
  • the average transmittance in the visible light region means that each transmittance in the visible light region determined by measuring the transmittance in the visible light region from 400 to 700 nm at least every 5 nm.
  • the rate is defined as the average value obtained by accumulating the rates.
  • the measurement parameter must be sufficiently larger than the mesh pattern described above, and is obtained by measuring at least 100 times larger than the mesh area of the mesh.
  • the thickness of the support used in the present invention is not particularly limited, but from the viewpoint of maintaining transmittance and handling, it is preferably 5 to 200 m, and preferably 30 to 150 / ⁇ ⁇ . More preferably.
  • the photosensitive material is exposed in order to form a conductive pattern by a development process described later.
  • the light source used for exposure include light such as visible light and ultraviolet light, radiation such as electron beam and X-ray, and ultraviolet light or near infrared light is preferably used. Further, a light source having a narrow wavelength distribution may be used for exposure, or a light source having a wavelength distribution may be used.
  • various light emitters that emit light in the spectral region are used as necessary.
  • a red luminescent material a green luminescent material, and a blue luminescent material may be used in combination.
  • the spectral region is not limited to the above red, green, and blue, and phosphors that emit light in the yellow, orange, purple, or infrared region are also used.
  • mercury lamp g-line, mercury lamp i-line, etc., which favor ultraviolet lamps, are also used.
  • exposure can be performed using various laser beams.
  • monochromatic high-density light such as gas laser, light emitting diode, semiconductor laser, semiconductor laser or solid-state laser using a semiconductor laser as a pumping light source and second harmonic light source (SHG) combining nonlinear optical crystal Can be used preferably, and KrF excimer laser, ArF excimer laser, F laser, etc. can also be used.
  • a semiconductor laser In order to make the system compact and rapid, exposure should be performed using a semiconductor laser, a semiconductor laser or a second harmonic generation light source (SHG) that combines a solid-state laser and a nonlinear optical crystal. preferable. In order to design an apparatus that is particularly compact, quick, and has a long life and high stability, exposure is preferably performed using a semiconductor laser.
  • SHG second harmonic generation light source
  • the laser light source specifically, an ultraviolet semiconductor, a blue semiconductor laser, a green semiconductor laser, a red semiconductor laser, a near infrared laser, or the like is preferably used.
  • the method for exposing the silver halide emulsion-containing layer to an image may be performed by surface exposure using a photomask or by scanning exposure using a laser beam.
  • exposure methods such as surface contact exposure, near-field exposure, reduced projection exposure, and reflection projection exposure may be used, such as condensing exposure using a lens or reflection exposure using a reflecting mirror.
  • the output of the laser may be about several tens of ⁇ W to 5W, as long as it is an amount suitable for exposing silver halide.
  • the development process is preferably a black and white development process that does not contain a color developing agent.
  • 1-phenol 3-virazolidone, 1-phenyl as a developing agent. 1, 4, dimethyl 1, 3 pyrazolidone, 1-phenyl 1, 4-methyl 4 -It can be used in combination with virazolidones such as hydroxymethyl 3 bisazolidone, 1 phenyl 4 methyl 3 bisazolidone and superadditive developing agents such as N-methylparaaminophenol sulfate.
  • a reductone compound such as ascorbic acid or isoascorbic acid in combination with the above superadditive developing agent without using hydroquinone.
  • Propanediol or the like can be used as appropriate.
  • the development processing solution used in the development processing can contain an image quality improving agent for the purpose of improving the image quality.
  • the image quality improver include nitrogen-containing heterocyclic compounds such as 1-ferro-5-mercaptotetrazole and 5-methylbenzotriazole.
  • the development processing performed after exposure includes physical development before fixing.
  • the pre-fixing physical development referred to here is a process for reinforcing developed silver by supplying silver ions other than the inside of the silver halide grains having a latent image by exposure before performing the fixing process described later. Show.
  • a specific method for supplying silver ions from the developing solution for example, a method in which silver nitrate or the like is dissolved in advance in the developing solution and silver ions are dissolved, or thiosulfuric acid is added in the developing solution.
  • Examples include a method in which a halogenated silver solvent such as sodium or ammonium thiocyanate is dissolved, and unexposed silver halide is dissolved during development to assist development of silver halide grains having a latent image. It is done.
  • a halogenated silver solvent such as sodium or ammonium thiocyanate
  • the use of a formulation in which a silver halide solvent is dissolved in advance in a developer can suppress a decrease in film transmittance due to the occurrence of capri in the unexposed area. It is preferable.
  • a fixing process is carried out for the purpose of removing and stabilizing the unexposed portions of the silver halide grains.
  • a fixer formulation used for photographic films, photographic papers and the like using silver halide grains can be used.
  • Fixing solution used in fixing process is sodium thiosulfate, potassium thiosulfate, ammonium thiosulfate, etc.
  • Aluminum sulfate, chromium sulfate, etc. can be used as a hardener for fixing.
  • sodium sulfite, potassium sulfite, ascorbic acid, erythorbic acid, etc. described in the developing solution can be used, and in addition, citrate, oxalic acid, etc. can be used. .
  • N-methyl-isothiazole-3-one N-methyl-isothiazol-5-chloro-3-one, N-methyl-isothiazole- 4,5-Dichloro-3-one, 2-Nitroe 2-Bromue 3-hydroxypropanol, 2-Methyl-4-chlorophenol, hydrogen peroxide, etc. can be used.
  • the complementary processing refers to processing for improving the conductivity by supplying a conductive material source not previously contained in the photosensitive material from the outside during or after the development processing.
  • Examples of the method include physical development or plating treatment. Physical development can be performed by immersing a photosensitive material containing a silver halide emulsion having a latent image in a processing solution containing silver ions or silver complex ions and a reducing agent. In the present invention, even when developed silver where the development start point of physical development is only the latent image nucleus becomes the physical development start point, it is defined as physical development and can be preferably used.
  • various conventionally known plating methods can be used for the plating treatment.
  • electrolytic plating and electroless plating can be carried out singly or in combination.
  • electroless plating that does not cause unevenness due to current distribution unevenness can be preferably used.
  • metals that can be used for electroless plating for example, copper, nickel, cobalt, tin, silver, gold, platinum, and other various alloys can be used. From the viewpoint of easily obtaining conductivity, it is particularly preferable to use a copper electroless plating.
  • the intensification process can be performed at any time during development, after development, before fixing, and after fixing process, but from the viewpoint of maintaining high transparency of the film, after the fixing process. Preferred to carry out.
  • it is 10 times or more and 100 times or less in terms of mass with respect to developed silver obtained by exposing and developing a metal amount-sensitive material provided by physical development or metal plating. Some embodiments are preferred. This value can be determined by quantifying the metal contained in the light-sensitive material by, for example, fluorescent X-ray analysis before and after physical development or metal plating. The amount of metal applied by physical development or metal plating
  • the conductivity tends to decrease slightly.
  • the transmittance tends to decrease due to metal deposition on unnecessary portions other than the conductive mesh pattern portion.
  • the description of physical development or metal plating means that at least one of physical development or plating treatment is performed, and both physical development and metal plating may be included. In the present invention, it is preferable to perform both physical development and metal plating.
  • Oxidation treatment allows unnecessary metal components to be ionized and dissolved and removed, and the transmittance of the film can be further increased.
  • the treatment liquid used for the oxidation treatment for example, a treatment method using an aqueous solution containing Fe (III) ions, hydrogen peroxide, persulfate, perborate, perphosphate, percarbonate, Using a treatment solution containing a conventionally known oxidant, such as a method of treatment with an aqueous solution containing peroxide such as peroxygen, rogenate, hypohalite, halogenate, or organic peroxide Can.
  • Oxidation is an aspect that is performed between the end of the development process and before the plating process. This is preferable because the transmittance can be improved efficiently in a short time, and the physical development is particularly preferable. This is a mode to be performed later.
  • a conductive mesh pattern in order to provide high translucency and high electromagnetic wave shielding performance, can be formed by drawing a lattice-like fine line pattern by exposure and then performing development processing or the like.
  • the line width of the conductive metal part is 20 m or less.
  • the interval is preferably 50 / zm or more.
  • the conductive metal part may have a part with a line width larger than 20 m for the purpose of ground connection or the like. From the viewpoint of making the image inconspicuous, the line width of the conductive metal part is preferably less than 18 ⁇ m, less than 15 ⁇ m, more preferably less than 14 m, and even more preferably less than 10 m.
  • the preferred value is less than 7 ⁇ m.
  • the conductive metal part of the present invention has an aperture ratio of preferably 85% or more, more preferably 90% or more, and most preferably 90% or more from the viewpoint of visible light transmittance.
  • the aperture ratio is the ratio of the portion without fine lines forming the mesh to the whole.
  • the aperture ratio of a square lattice mesh with a line width of 10 / ⁇ ⁇ and a pitch of 200 ⁇ m is 90%.
  • the halogen silver halide emulsion coated on each surface has a sensitivity at different wavelengths by spectral sensitization.
  • sensitivity By giving sensitivity to different wavelengths on the front and back surfaces, it becomes possible to create different conductive patterns on each surface, for example, to selectively shield against electromagnetic waves of different frequencies on the front and back surfaces. It is also possible to form a conductive pattern.
  • the electromagnetic wave shielding film of the present invention is used in combination with, for example, an optical filter for a plasma display panel (PDP), a near-infrared absorbing layer that is a layer containing a near-infrared absorbing dye under a halogenated silver particle layer. It is also preferable to set up.
  • the near-infrared ray absorbing layer may be provided on the opposite side of the support from the side where the halogen silver halide particle layer is present, or may be provided on both the side opposite to the halogen silver halide particle layer side. .
  • a near-infrared absorbing layer may be provided between the silver halide grain layer containing silver halide and the support, or a near-infrared absorbing layer may be provided on the opposite side of the support as viewed from the silver halide grain layer. Yes, the former is preferred because it can be applied to one side of the support at the same time.
  • near-infrared absorbing dyes include polymethine, phthalocyanine, naphthalocyanine, metal complex, aminium, imonium, dimonium, anthraquinone, dithiol metal complex, naphthoquinone, indole phenol , Azo, tria
  • PDP optical filter is required to have near-infrared absorptivity mainly for heat ray absorption and prevention of noise in electronic equipment.
  • a metal complex, amidium, phthalocyanine, naphthalocyanine, dim-humic dye that has a maximum absorption wavelength of 750-: L lOOnm is preferred.
  • Particularly preferred is a sulfur compound system.
  • di-moum compounds are IRG-022, IRG-040 (the trade name of Nippon Gyaku Co., Ltd.), nickel dithiol complex compound is SIR- 128, SIR-130, SIR-132, SIR-159, SIR-152, SIR-162 (above, product names manufactured by Mitsui Chemicals Co., Ltd.), phthalocyanine compounds are IR-10, IR-12 (above Commercial products such as Nippon Shokubai Co., Ltd.) can be used.
  • the near-infrared absorbing dye includes alcohol solvents such as methanol, ethanol and isopropanol, ketone solvents such as acetone, methyl ethyl ketone and methyl butyl ketone, organic solvents such as dimethyl sulfoxide, dimethylformamide, dimethyl ether and toluene.
  • alcohol solvents such as methanol, ethanol and isopropanol
  • ketone solvents such as acetone, methyl ethyl ketone and methyl butyl ketone
  • organic solvents such as dimethyl sulfoxide, dimethylformamide, dimethyl ether and toluene.
  • a colorant having a near-infrared absorbing ability is contained in the color tone correction layer, either one of the above dyes may be contained, or two or more kinds may be contained. Oh ,.
  • the electromagnetic wave shielding material of the present invention is used in combination with, for example, an optical filter for a plasma display panel (PDP), this is used to prevent a decrease in color reproducibility due to emission of neon gas used in the PDP.
  • an embodiment containing a dye that absorbs light at around 595 nm is preferable.
  • dyes that absorb such specific wavelengths include, for example, azo, condensed azo, phthalocyanine, anthraquinone, indigo, perinone, perylene, dioxazine, and quinacridone.
  • organic pigments such as methine series, isoindolinone series, quinophthalone series, pyrrole series, thioindigo series and metal complex series, organic dyes, and inorganic pigments.
  • phthalocyanine and anthraquinone dyes are particularly preferably used because of their good weather resistance.
  • the electromagnetic wave shielding material of the present invention is used for the purpose of protecting a display screen, etc. It is preferable to provide an antireflection layer.
  • the antireflection layer metal oxides, fluorides, halides, borides, carbides, nitrides, sulfides, and other inorganic materials such as vacuum deposition, sputtering, ion plating, ion beam assist, etc.
  • a method of laminating thin films in a single layer or multiple layers, a method of laminating thin films of different refractive indexes such as acrylic resin, fluorine resin, etc. into a single layer or multiple layers can be used.
  • an antireflection layer is formed on the opposite side of the transparent electromagnetic wave shielding film with the support of the film sandwiched between the layer having the conductive pattern!
  • the antireflection layer is formed after the conductive pattern is formed first, the efficiency of the plasma treatment and corona treatment performed to improve the adhesion between the antireflection layer and the support tends to decrease.
  • An embodiment in which the layer is formed first is preferred.
  • an aspect in which the conductive pattern layer is formed after pasting a protective film in advance Is preferred ⁇ .
  • the protective film used in the present invention is capable of using a commercially available protect film.
  • the type of pressure-sensitive adhesive used for the protective film is not particularly limited, but it is preferable to use one that does not alter the antireflection film and does not damage the antireflection film during peeling. From such a viewpoint, an acrylic or silicone adhesive is preferably used. Further, the adhesive strength is preferably 0.008-0.6NZ25mm.
  • EMP-1 In the preparation of EMP-1, the average particle size was set to 0, except that (A1 solution) and (B1 solution) were added and (C1 solution) and (D1 solution) were added at a temperature of 40 ° C. 07 ⁇ m, Halogenous silver emulsion EMP-2 with a coefficient of variation of 0.14, and an average particle size of 0.12 m, a coefficient of variation of the particle size distribution of 0.13. Of silver halide emulsion EMP-3 was obtained.
  • EMP-1 is chemically sensitized with 2. Omg of sodium thiosulfate per mol of silver halide at 40 ° C for 80 minutes, and after completion of chemical sensitization, 4-hydroxy-6-methyl-1, 3, 3a, 7-tetrazaindene (TAI) was added in an amount of 500 mg per mole of silver halide to obtain a silver halide silver emulsion EM-1.
  • TAI 4-hydroxy-6-methyl-1, 3, 3a, 7-tetrazaindene
  • the silver halide emulsion was changed from EMP-1 to EMP-2 and EMP-3, and the amount of sodium thiosulfate and TAI added was adjusted to the total surface of the silver halide grains. Similarly, except for adjusting in proportion to the product, Halogenous silver emulsions EM-2 and EM-3 were obtained, respectively.
  • the silver halide emulsions EM-1 to EM-3 prepared as described above were prepared as shown in Table 1. Coating was performed so that the amount of gelatin was the same, and then drying was performed to produce photosensitive materials 101 to 117.
  • a hardener H-1: tetrakis (bulusulfol-methyl) methane
  • H-1 tetrakis (bulusulfol-methyl) methane
  • a surfactant SU-2: di (2-ethylhexyl sulfosuccinate) • sodium
  • Table 1 the amount of silver is shown as a value obtained by converting the amount of the halogeno silver emulsion used to equimolar silver.
  • Electromagnetic wave transmittance table! Specific resistance ⁇ Evaluation after forced degradation test
  • the transparent electromagnetic wave shielding films S102 to S106, SI 08 to S111, S113 and S116 satisfying the requirements of the present invention have high transmittance and low surface resistivity, and after forced degradation test It is obvious that the effect of the present invention can be obtained that the degree of deterioration of the film brittleness is small when the transmittance change of the film is small.
  • the value obtained by dividing the coating silver amount (gZm 2 ) by the particle size ( ⁇ m) is in the range of 6 to 25 [this transparent electromagnetic wave shielding Finolem S104 to S106, S108 to S111, and S113 are the same photosensitive halogen compounds.
  • the coating of the edge partial force at the time of cutting has almost no peeling and a low surface specific resistance, indicating that this is a preferred embodiment of the present invention.
  • Table 3 shows the immersion time in the Pd catalyst solution (CAT-1) and the immersion solution (PL-1) in the transparent electromagnetic wave shielding films S101, S105, and S107 produced in Example 1.
  • Transparent electromagnetic wave shielding films S201 to S209 were produced in the same manner except for changing to.
  • the amount of developed silver after the development of silver halide was completed at the stage when (DEV-1), (FIX-1) and water washing were completed. Quantitatively by X-ray fluorescence analysis, and after the processing of (PD-1), (CAT-1) and (PL-1) is completed, X-ray fluorescence analysis is performed again, and the amount of physical developed silver and copper The amount of adhesion was quantified. Using the amount of metal thus determined, the ratio of the amount of metal imparted by physical development or metal plating to the amount of developed silver obtained by exposing and developing the photosensitive material was determined as a mass ratio.
  • the amount of metal imparted by physical development and metal plating is less than 10 times in terms of mass with respect to developed silver obtained by exposing and developing the photosensitive material.
  • the transparent electromagnetic wave shielding film S201 has high transmittance and low! / Surface specific resistance, but is 10 times or more in terms of mass, compared with other transparent electromagnetic wave shielding films according to the present invention. As a result, the surface resistivity was slightly high.
  • the transparent electromagnetic wave shielding film S205 in which the amount of metal applied by physical development and metal plating is 100 times greater than the developed silver obtained by exposing and developing the photosensitive material in terms of mass is: Although high transmittance, low V, and surface specific resistance were obtained, it was less than 100 times in terms of mass, resulting in slightly lower transmittance than other transparent electromagnetic wave shielding films according to the present invention. .
  • the amount of the metal that satisfies the requirements of the present invention and is imparted by physical development and metal plating is used for the photosensitive material.
  • the transparent electromagnetic wave shielding films S105 and S202 to S204, which are 10 times to 100 times in terms of mass with respect to developed silver obtained by exposure and development processing, have particularly high transmittance and low surface resistivity. It can be seen that this is a preferred embodiment of the present invention.
  • the electromagnetic wave shielding films S208 and S209 produced using the photosensitive material 107 that does not satisfy the constituent requirements of the present invention, like S107, were found to have cracks in the coating after the forced deterioration test and were inferior in brittleness.
  • the following acid solution (OX-1) was used for 45 seconds at 45 ° C for 120 seconds between physical development and Pd catalyst treatment.
  • Transparent electromagnetic wave shielding films S301 and S302 were prepared in the same manner except that the acid-soaking treatment was performed.
  • S106, S107, S301 and S302 were prepared.
  • the plating solution (P L-1) use the following black solution (BP-1) at 80 ° C for 120 seconds.
  • Transparent electromagnetic wave shielding films S303 to S306 were produced in the same manner except that the blackening treatment was performed. Evaluation similar to Example 1 was implemented with respect to the transparent electromagnetic wave shielding films S301-S306 obtained in this way.
  • the transparent electromagnetic wave shielding film with the conductive pattern side down was placed on black paper and the opposite surface force film was observed to confirm whether metallic gloss reflection was observed. The results are shown in Table 4.
  • the transparent electromagnetic wave shielding films S301, S302, S305 and S306 subjected to the oxidation treatment can obtain particularly high transmittance and are preferable embodiments of the present invention.
  • the transparent electromagnetic wave shielding films 303 to S306 treated with black glazing are not only capable of achieving both high transmittance and low surface resistivity, but also the metal reflection gloss of the conductive pattern is inconspicuous. Sometimes the visibility is low and high quality It can be seen that the transparent electromagnetic wave shielding film is particularly preferable.
  • sensitizing dye SD-1 or SD-2 was added to each mole of silver halide 1 mol after completion of chemical sensitization and before adding TAI. Except for using ⁇ Ka ⁇ so that per 3 X 10- 4 mole in the same manner, green-sensitive silver halide emulsion EM-1G, and the red-sensitive Harogeni ⁇ emulsion EM-1R manufactured.
  • Coating was performed in the same manner as in the preparation of the photosensitive material 105 prepared in Example 1, except that the photosensitive halogenated silver halide emulsion was changed from EM-1 to EM-1G. After drying, the photosensitive material is coated on the back side of the photosensitive material using the same coating solution except that the photosensitive halogen silver emulsion is changed to EM-1G for EM-1G. Double-sided photosensitive material 401 having
  • the front and back surfaces of the support were each different.
  • an electromagnetic wave shielding layer having different properties can be obtained by preparing different electromagnetic wave shielding patterns on the front and back surfaces.
  • a plurality of films can be provided on a sheet of film, which is a preferable aspect of the present invention.
  • UV-1 1 part by mass of the UV absorber (UV-1) was mixed with 20 parts by mass of polyvinyl acetal (Esreck BM-S: Sekisui Chemical Co., Ltd.) and ethyl acetate Z
  • Photosensitive material was the same except that a polyethylene terephthalate support coated with UV — 1 at 0.2 g / m 2 after being dissolved in a methyl ethyl ketone mixed solvent (mixing ratio 2: 1) was used.
  • 501 was produced, and transparent electromagnetic wave shielding film S501 was produced using the same method as transparent electromagnetic wave shielding film S105.
  • Example 1 The same evaluation as in Example 1 was performed on the transparent electromagnetic wave shielding film S501 thus obtained.
  • light was irradiated for 24 hours at 71 X in an environment of 24 ° C 60% RH, and the ratio of the transmittance after forced deterioration to the transmittance before forced deterioration was obtained.
  • “generation of cracks after storage” was evaluated and used as a measure of durability.
  • the transparent electromagnetic wave shielding film S501 having at least one ultraviolet absorbing layer has improved durability of the coating film against light irradiation, and is a particularly preferred embodiment of the present invention. I know that there is.
  • a transparent electromagnetic wave shielding film S640 was prepared by providing an antireflection layer on the back surface of the transparent electromagnetic wave shielding film S105 produced in Example 1 by the same method as in the production of the above-described antireflection film (AR-1).
  • the transparent electromagnetic wave shielding films S601 to S604 according to the present invention all show high transmittance and low surface resistivity, and the transmittance change after the forced deterioration test is small. Although the effect of the present invention is small, the conductive pattern is particularly important.
  • the shielding films S602 and S603 are a preferable embodiment of the present invention that can provide a transparent electromagnetic wave shielding film having a good antireflection layer without causing occurrence of uneven reflection in the antireflection layer and occurrence of an antireflection function. I understand.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

A transparent electromagnetic shielding film that excels in electromagnetic wave shielding performance, having high transparency, and that excels in durability despite temperature and humidity changes. This transparent electromagnetic shielding film is one obtained by exposure and subsequent development processing of a photosensitive material having a support and, superimposed thereon, a layer containing at least photosensitive silver halide and a binder, characterized in that the content of photosensitive silver halide in the photosensitive material is from 0.05 to less than 1 g/m2 in terms of silver, and that the amount of the binder is in the range of 10 mg/m2 to 0.2 g/m2.

Description

明 細 書  Specification
透明電磁波遮断フィルム及びその作製方法  Transparent electromagnetic wave shielding film and method for producing the same
技術分野  Technical field
[0001] 本発明は、携帯電話、電子レンジ、 CRT、及びフラットパネルディスプレイなどの電 子機器カゝら発生する電磁波を遮断する透明電磁波遮断フィルム、およびその製造方 法に関する。  The present invention relates to a transparent electromagnetic wave shielding film that shields electromagnetic waves generated from electronic devices such as mobile phones, microwave ovens, CRTs, and flat panel displays, and a method for manufacturing the same.
背景技術  Background art
[0002] 近年、携帯電話やパソコン、 TVなどに用いられるディスプレイ装置などに代表され るような電子機器の使用機会が増カロしているが、これらの電子機器力もは一般的に 電磁波が放出され、それにより、電子、電気機器の誤動作、障害あるいは人体に対し ても害を与える可能性があるなど、いわゆる電磁波障害 (EMI)が生じることが知られ ている。それに伴い、このような EMIを低減する必要性が高まっており、欧米を中心 に電磁波放出の強さに関する規格又は規制が設けられ、最近の電子機器にはこれ らの基準を満たすことが求められている。  [0002] In recent years, the use of electronic devices such as display devices used in mobile phones, personal computers, TVs, and the like has increased, but these electronic devices are also generally capable of emitting electromagnetic waves. As a result, it is known that so-called electromagnetic interference (EMI) occurs, such as malfunction of electronic and electrical equipment, failure, or possible harm to human body. Along with this, the need to reduce such EMI has increased, and standards or regulations regarding the intensity of electromagnetic wave emission have been established mainly in Europe and the United States, and recent electronic devices are required to meet these standards. ing.
[0003] 電磁波を遮断する方法として、例えば高い誘電損失,導電損失,磁性損失を示す いわゆる電磁波吸収材料を用いる方法が知られている。しかし、これらの材料は、一 般的に不透明であるため、 CRTやフラットパネルディスプレイ、あるいは窓ガラスのよ うに視認性を必要とする機材には用いることができず、その用途は限られていた。  [0003] As a method for blocking electromagnetic waves, for example, a method using a so-called electromagnetic wave absorbing material showing high dielectric loss, conductive loss, and magnetic loss is known. However, since these materials are generally opaque, they cannot be used for equipment that requires visibility, such as CRTs, flat panel displays, or window glass, and their use has been limited. .
[0004] 電磁波遮断性能と、透明性を両立させる手段として、例えば銀などの導電性材料 の薄膜をスパッタ法などにより透明基材上に形成する方法が知られている(例えば、 特許文献 1参照。)。  [0004] As a means for achieving both electromagnetic wave shielding performance and transparency, for example, a method of forming a thin film of a conductive material such as silver on a transparent substrate by sputtering or the like is known (for example, see Patent Document 1). .)
[0005] しかし、これら金属薄膜の場合には、高い電磁波遮蔽性能を付与するためには金 属薄膜層の厚さを厚くする必要があり、その場合透過率が低下してしまい、高い電磁 波遮蔽性能と透過率の両立は困難であった。またスパッタ法は一般に真空環境を必 要とするため、生産性向上の観点力もの課題も挙げられていた。  [0005] However, in the case of these metal thin films, it is necessary to increase the thickness of the metal thin film layer in order to provide high electromagnetic wave shielding performance. It was difficult to achieve both shielding performance and transmittance. In addition, since the sputtering method generally requires a vacuum environment, there have been problems with the viewpoint of improving productivity.
[0006] 高い電磁波遮蔽性能と透過率を両立できる電磁波遮蔽材料として、導電性メッシュ を用いる材料があり、その具現ィ匕手段として様々な方法が提案されている(例えば、 特許文献 2〜4参照。 )0しかし、いずれも作製方法が煩雑であり、大量生産するため の連続生産性という観点力もは技術が不十分であり、改良が望まれていた。また、導 電性メッシュを用いた電磁波遮蔽フィルムの中でも、感光性ハロゲンィ匕銀への露光、 現像プロセスを利用して導電性メッシュを作製する方法は、メッシュパターンの形成 が容易であり、し力も安価に大量に透明電磁波遮断材料を作製できる有用な方法と して公開されている。その中の一つとして、銀塩拡散転写法を用いた電磁波遮蔽材 料が知られているが (例えば、特許文献 5、 6参照。)、拡散転写法は、予め基材に物 理現像核を均一に塗布するため、非導電性部分に不要な触媒が残存し、透過性を 損ねやすぐまた現像に銀イオンあるいは銀錯体の拡散現象を利用するため、鮮鋭 性が劣化しやすくその改良が望まれて 、た。 [0006] As an electromagnetic wave shielding material that can achieve both high electromagnetic wave shielding performance and transmittance, there is a material using a conductive mesh, and various methods have been proposed as an implementation means thereof (for example, See Patent Documents 2-4. ) 0 However, both a complicated manufacturing method, the viewpoint force of continuous productivity for mass production is also the technique is insufficient, improvement has been desired. In addition, among electromagnetic wave shielding films using conductive mesh, the method of producing a conductive mesh by using exposure to photosensitive halogen silver and development processes makes it easy to form a mesh pattern. It has been published as a useful method for producing transparent electromagnetic wave shielding materials in large quantities at low cost. As one of them, an electromagnetic wave shielding material using a silver salt diffusion transfer method is known (see, for example, Patent Documents 5 and 6). As a result of the uniform coating, unnecessary catalyst remains in the non-conductive portion, impairing the permeability, and immediately using the diffusion phenomenon of silver ions or silver complexes for development, sharpness is likely to deteriorate and the improvement is improved. It was hoped.
[0007] また、感光性ハロゲンィ匕銀への露光、現像プロセスを利用した別な方法として、ハロ ゲン化銀乳剤層に露光 ·現像を行!ヽ直接的に現像銀を形成して、それを触媒として めっき等を行うことにより導電性パターンを作製した電磁波遮蔽材料が知られている( 例えば、特許文献 7〜9参照。 )0これらの材料においては、感光性ハロゲン化銀乳 剤を支持体上に保持するためバインダーを用いる力 導電性を高めるため、 AgZバ インダー比をできるだけ高くする方が好ま 、とされて!/、る。 [0007] In addition, as another method utilizing the exposure and development process of photosensitive halogen silver, exposure and development are performed on the silver halide emulsion layer. Electromagnetic wave shielding materials in which a conductive pattern is produced by performing plating or the like as a catalyst are known (see, for example, Patent Documents 7 to 9). 0 In these materials, a photosensitive silver halide emulsion is used as a support. The power to use a binder to hold on It is preferred to increase the AgZ binder ratio as much as possible to increase conductivity! /
特許文献 1:特開 2004— 179405公報  Patent Document 1: Japanese Unexamined Patent Application Publication No. 2004-179405
特許文献 2:特開平 5— 327274号公報  Patent Document 2: JP-A-5-327274
特許文献 3:特開平 11— 170421号公報  Patent Document 3: Japanese Patent Laid-Open No. 11-170421
特許文献 4:特開 2003 - 23290号公報  Patent Document 4: Japanese Patent Laid-Open No. 2003-23290
特許文献 5:特開 2004 - 172041号公報  Patent Document 5: Japanese Unexamined Patent Application Publication No. 2004-172041
特許文献 6:特開 2005— 183059号公報  Patent Document 6: Japanese Patent Laid-Open No. 2005-183059
特許文献 7:特開 2004 - 221564号公報  Patent Document 7: Japanese Unexamined Patent Application Publication No. 2004-221564
特許文献 8:特開 2004 - 221565号公報  Patent Document 8: Japanese Patent Application Laid-Open No. 2004-221565
特許文献 9:国際公開特許 01Z51276号パンフレット  Patent Document 9: Pamphlet of International Publication No. 01Z51276
発明の開示  Disclosure of the invention
発明が解決しょうとする課題  Problems to be solved by the invention
[0008] しかし、 AgZバインダー比を高く維持した場合、導電性は高まるものの、温度、湿 度変化の激しい環境で長期間使用したときに透明電磁波遮断フィルムが劣化しやす い傾向にあり、その改良が望まれていた。これは、現像、および物理現像 Zめっきな ど様々な処理液を通過するときに、支持体上に保持されているバインダーの劣化に 起因していると推定される。 [0008] However, when the AgZ binder ratio is kept high, the conductivity increases, but the temperature, humidity, The transparent electromagnetic wave shielding film tends to be deteriorated when used for a long period of time in an environment where the degree of change is severe, and the improvement has been desired. This is presumed to be due to deterioration of the binder held on the support when passing through various processing solutions such as development and physical development Z plating.
[0009] 本発明は、上記課題に鑑みなされたものであり、その目的は電磁波遮断性能に優 れ、かつ高い透明性を有し、さらに温度、湿度変化に対する耐久性に優れた透明電 磁波遮断フィルムを提供することにある。  [0009] The present invention has been made in view of the above problems, and its purpose is to provide a transparent electromagnetic wave shielding excellent in electromagnetic wave shielding performance, having high transparency, and having excellent durability against changes in temperature and humidity. To provide a film.
課題を解決するための手段  Means for solving the problem
[0010] そこで、本発明者らは、ハロゲン化銀感光材料を利用して導電性メッシュを作製す る方法において、ハロゲンィ匕銀感光材料に着目して検討した結果、ハロゲンィ匕銀乳 剤とそれを支持体上に保持するためのバインダーに関して、その量比だけでなぐ絶 対量が一定の範囲となるように設計することにより、高い導電性を維持しつつ、かつ 温度、湿度変化に対する耐久性に優れた透明電磁波遮断フィルムを得ることができ ることを見いだした。 [0010] Therefore, the inventors of the present invention have studied the method of producing a conductive mesh using a silver halide light-sensitive material while paying attention to the halogen-silver light-sensitive material. By designing the binder to hold the substrate on the support so that the absolute amount of the binder alone is within a certain range, it maintains durability and is resistant to changes in temperature and humidity. It was found that an excellent transparent electromagnetic wave shielding film can be obtained.
[0011] すなわち、本発明の目的は、以下の透明電磁波遮断フィルムにより達成される。  That is, the object of the present invention is achieved by the following transparent electromagnetic wave shielding film.
[0012] 1.支持体上に、少なくとも感光性ハロゲンィ匕銀及びバインダーからなる層を有する 感光材料に、露光後、現像処理を行い作製される透明電磁波遮断フィルムにおいて[0012] 1. In a transparent electromagnetic wave shielding film produced by subjecting a photosensitive material having a layer comprising at least a photosensitive silver halide silver and a binder on a support to a development process after exposure.
、該感光材料における前記感光性ハロゲンィ匕銀の含有量が銀換算で 0. 05g/m2 以上 lgZm2未満であり、かつ前記バインダーの量が lOmgZm2以上 0. 2gZm2以 下であることを特徴とする透明電磁波遮断フィルム。 , The content of the photosensitive Harogeni匕銀in the photosensitive material is lgZm less than 2 0. 05G / m 2 or more in terms of silver, and the amount of the binder is 2 hereinafter LOmgZm 2 or 0. 2GZm A transparent electromagnetic wave shielding film characterized.
[0013] 2.前記透明電磁波遮断フィルムにおいて、露光、現像処理後に物理現像または 金属めつきが施され、物理現像または金属めつきにより付与された金属量が、感光材 料を露光、現像処理することにより得られた現像銀量に対して、質量換算で 10倍以 上 100倍以下であることを特徴とする前記 1に記載の透明電磁波遮断フィルム。 3.前記透明電磁波遮断フィルムにおいて、ハロゲンィ匕銀の含有量 (g/m2)をノヽロゲ ン化銀の平均粒径 ( μ m)で除した値が 6以上 25以下であることを特徴とする前記 1 または 2に記載の透明電磁波遮断フィルム。 [0013] 2. The transparent electromagnetic wave shielding film is subjected to physical development or metal plating after exposure and development, and the amount of metal applied by physical development or metal plating exposes and develops the photosensitive material. 2. The transparent electromagnetic wave shielding film according to 1 above, which is 10 to 100 times in terms of mass with respect to the developed silver amount obtained by the above. 3. The transparent electromagnetic wave shielding film is characterized in that a value obtained by dividing the content of silver halide (g / m 2 ) by the average grain size of silver halide (μm) is 6 or more and 25 or less. 3. The transparent electromagnetic wave shielding film according to 1 or 2 above.
[0014] 4.前記透明電磁波遮断フィルムにおいて、露光、現像処理後に酸化処理が施さ れていることを特徴とする前記 1〜3の何れか 1項に記載の透明電磁波遮断フィルム [0014] 4. The transparent electromagnetic wave shielding film is subjected to oxidation after exposure and development. 4. The transparent electromagnetic wave shielding film according to any one of 1 to 3 above, wherein
[0015] 5.前記透明電磁波遮断フィルムにおいて、露光、現像処理後に黒化処理が施さ れていることを特徴とする前記 1〜4の何れか 1項に記載の透明電磁波遮断フィルム [0015] 5. The transparent electromagnetic wave shielding film as described in any one of 1 to 4 above, wherein the transparent electromagnetic wave shielding film is subjected to blackening treatment after exposure and development processing.
[0016] 6.前記透明電磁波遮断フィルムにおいて、感光性ハロゲンィ匕銀粒子が分光増感 されていることを特徴とする前記 1〜5の何れか 1項に記載の透明電磁波遮断フィル ム。 [0016] 6. The transparent electromagnetic wave shielding film as described in any one of 1 to 5 above, wherein in the transparent electromagnetic wave shielding film, photosensitive halogen silver halide particles are spectrally sensitized.
[0017] 7.前記透明電磁波遮断フィルムにおいて、該フィルムが少なくとも 1層の紫外線吸 収層を有していることを特徴とする前記 1〜6の何れか 1項に記載の透明電磁波遮断 フイノレム。  [0017] 7. The transparent electromagnetic wave shielding film according to any one of 1 to 6, wherein the transparent electromagnetic wave shielding film has at least one ultraviolet absorbing layer.
[0018] 8.前記透明電磁波遮断フィルムにおいて、該フィルムの支持体を挟んだ両面に各 々異なる導電性パターンを有していることを特徴とする前記 1〜7の何れか 1項に記 載の透明電磁波遮断フィルム。  [0018] 8. The transparent electromagnetic wave shielding film according to any one of 1 to 7, wherein the transparent electromagnetic wave shielding film has different conductive patterns on both sides of the support of the film. Transparent electromagnetic wave shielding film.
[0019] 9.前記透明電磁波遮断フィルムにおいて、導電性パターンを有する層に対して該 フィルムの支持体を挟んだ反対側に反射防止層を有し、反射防止層を形成後に、プ ロテクトフイルムを貼り合わせた後、導電性パターン層が形成されることを特徴とする 前記 1〜7の何れか 1項に記載の透明電磁波遮断フィルム。 [0019] 9. The transparent electromagnetic wave shielding film has an antireflection layer on the opposite side of the layer having the conductive pattern to the layer having the conductive pattern, and the protective film is formed after the antireflection layer is formed. 8. The transparent electromagnetic wave shielding film according to any one of 1 to 7, wherein a conductive pattern layer is formed after bonding.
[0020] 10.前記 1〜9の何れか 1項に記載の透明電磁波遮断フィルムの作製方法であつ て、露光、現像処理により得られた現像銀に対して補力処理を施すことを特徴とする 透明電磁波遮断フィルムの作製方法。 [0020] 10. The method for producing a transparent electromagnetic wave shielding film according to any one of 1 to 9, wherein the developed silver obtained by exposure and development is subjected to intensification. A method for producing a transparent electromagnetic wave shielding film.
発明の効果  The invention's effect
[0021] 本発明によれば、電磁波遮断性能に優れ、かつ高い透明性を有し、さらに温度、 湿度変化に対する耐久性に優れた電磁波遮断フィルムの作製方法を提供することが できる。  [0021] According to the present invention, it is possible to provide a method for producing an electromagnetic wave shielding film having excellent electromagnetic wave shielding performance, high transparency, and excellent durability against changes in temperature and humidity.
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0022] 本発明の透明電磁波遮断フィルムは、支持体上に、少なくとも感光性ハロゲンィ匕銀 及びバインダーカゝらなる層を有する感光材料にぉ ヽて、前記感光性ハロゲン化銀の 含有量が銀換算で 0. 05g/m2以上 lg/m2未満であり、かつ前記バインダー量が 1 Omg/m2以上 0. 2g/m2以下であることを特徴とする。 [0022] The transparent electromagnetic wave shielding film of the present invention comprises a photosensitive material having at least a layer composed of a photosensitive halogenated silver and a binder on a support. The content is 0.05 g / m 2 or more and less than lg / m 2 in terms of silver, and the amount of the binder is 1 Omg / m 2 or more and 0.2 g / m 2 or less.
[0023] 以下、本発明について詳細に説明する。  [0023] Hereinafter, the present invention will be described in detail.
[0024] 〔ハロゲン化銀乳剤含有層〕  [Silver halide emulsion-containing layer]
本発明にお!ヽては、後述する感光性ハロゲンィ匕銀及びバインダーを含有するハロ ゲン化銀乳剤含有層が支持体上に設けられるが、ハロゲン化銀乳剤含有層は、この 他に、硬膜剤、硬調化剤、活性剤等を含有することができる。  In the present invention, a silver halide emulsion-containing layer containing a light-sensitive silver halide silver and a binder, which will be described later, is provided on a support. A film agent, a hardener, an activator and the like can be contained.
[0025] 本発明において、感光性ハロゲンィ匕銀の含有量は、銀換算で 0. 05g/m2以上 lg Zm2未満である場合に、本発明の効果を得ることができる。感光性ハロゲンィ匕銀の 含有量が 0. 05gZm2未満の場合、電磁波遮断性能を十分に得ることが困難となる。 これは、後述する物理現像または金属めつき処理の触媒となる現像銀核の量が不十 分となり、有効な導電性メッシュを形成しに《なるためと推定される。また、感光性ハ ロゲン化銀の含有量が lgZm2以上である場合、バインダーに対するハロゲンィ匕銀の 量が相対的に多くなるため、被膜が脆弱になりやすぐ十分な被膜強度を維持するこ とが困難となる。 In the present invention, the effect of the present invention can be obtained when the content of the photosensitive halogenated silver is 0.05 g / m 2 or more and less than lg Zm 2 in terms of silver. When the content of the photosensitive halogen silver is less than 0.05 gZm 2 , it is difficult to obtain sufficient electromagnetic wave shielding performance. This is presumed to be because the amount of developed silver nuclei serving as a catalyst for the physical development or metal plating process described later is insufficient, and an effective conductive mesh is formed. In addition, when the photosensitive silver halide content is lgZm 2 or more, the amount of halogenated silver relative to the binder is relatively large, so that the coating becomes fragile and immediately maintains sufficient coating strength. It becomes difficult.
[0026] 被膜物性を維持するためにバインダー量を増やした場合、感光性ハロゲンィ匕銀粒 子の粒子間距離が大きくなるため、現像銀ネットワークが形成されに《なり、有効な 導電性メッシュを形成しに《なるとともに、温度、湿度変化に対する耐久性も不十分 となり本発明の効果が得られ難くなる。  [0026] When the amount of the binder is increased in order to maintain the physical properties of the film, the distance between the grains of the photosensitive halogenated silver particles increases, so that a developed silver network is formed, and an effective conductive mesh is formed. At the same time, the durability against changes in temperature and humidity becomes insufficient, and it becomes difficult to obtain the effects of the present invention.
[0027] 本発明において、感光材料のバインダー量は lOmgZm2以上 0. 2gZm2以下の 場合に本発明の効果を得ることができる。ノインダー量が 1 Omg/m2未満の場合、 ノインダーに対するハロゲンィ匕銀の量が相対的に多くなるため、被膜が脆弱になり やすぐ十分な被膜強度を維持することが困難となる。また、ノインダー量が 0. 2gZ m2より多い場合には、感光性ハロゲンィ匕銀粒子の粒子間距離が大きくなるため、現 像銀ネットワークが形成されに《なり、有効な導電性メッシュを形成しに《なるととも に、温度、湿度変化に対する耐久性も不十分となり本発明の効果が得られなくなる。 In the present invention, the effect of the present invention can be obtained when the binder amount of the light-sensitive material is 1 OmgZm 2 or more and 0.2 gZm 2 or less. When the amount of noinder is less than 1 Omg / m 2, the amount of halogen silver relative to the noinder becomes relatively large, so that the film becomes fragile and it is difficult to immediately maintain a sufficient film strength. In addition, when the Noinder amount is more than 0.2 gZ m 2 , the distance between the grains of the photosensitive halogen-molybdenum grains becomes large, so that a current silver network is formed, and an effective conductive mesh is formed. In addition, the durability against changes in temperature and humidity becomes insufficient, and the effects of the present invention cannot be obtained.
[0028] 〔ハロゲン化銀粒子〕 [0028] [Silver halide grains]
本発明で用いられるハロゲンィ匕銀粒子の組成は、塩化銀、臭化銀、塩臭化銀、沃 臭化銀、塩沃臭化銀、塩沃化銀等任意のハロゲン組成を有するものであってもよい 力 導電性のよい金属銀を得るためには、感度の高い微粒子が好ましぐ沃臭化銀 粒子が好ましく用いられる。沃素を多く含むようにすると感度も高く微粒子にすること ができる。 The composition of the silver halide silver grains used in the present invention is as follows: silver chloride, silver bromide, silver chlorobromide, iodine Silver bromide, silver chloroiodobromide, silver chloroiodide, etc. may have any halogen composition Force To obtain highly conductive metal silver, fine grains with high sensitivity are preferred. Silver halide grains are preferably used. If a large amount of iodine is contained, the sensitivity is high and fine particles can be obtained.
[0029] ノ、ロゲン化銀粒子が現像され金属銀粒子になった後の表面比抵抗を下げ、電磁 波を効率的に遮断するためには、現像銀粒子同士の接触面積ができるだけ大きくな る必要がある。そのためには表面積比を高めるためにハロゲンィ匕銀粒子サイズが小 さい程よいが、小さすぎる粒子は凝集して大きな塊状になりやすぐその場合接触面 積は逆に少なくなつてしまうので最適な粒子径が存在する。本発明において、ハロゲ ン化銀粒子の平均粒子サイズは、球相当径で 0. 01-0. 5 mが好ましぐより好ま しくは 0. 03〜0. 3 mである。なお、ハロゲンィ匕銀粒子の球相当径とは、粒子形状 が球形の同じ体積を有する粒子の直径を表す。ハロゲンィ匕銀粒子の平均粒子サイズ は、ハロゲンィ匕銀粒子の調製時の温度、 pAg、 pH、銀イオン溶液とハロゲン溶液の 添加速度、粒子径コントロール剤(例えば、 1 フエ-ルー 5 メルカプトテトラゾール 、 2—メルカプトべンズイミダゾール、ベンズトリァゾール、テトラザインデン化合物類、 核酸誘導体類、チォエーテルィ匕合物類等)を適宜組み合わせて制御することができ る。  [0029] In order to reduce the surface specific resistance of the silver halide particles after they are developed into metal silver particles and effectively block electromagnetic waves, the contact area between the developed silver particles becomes as large as possible. There is a need. For this purpose, the smaller the size of the halogen silver silver particles, the better to increase the surface area ratio, but the particles that are too small aggregate to form large agglomerates, and in that case, the contact area decreases on the contrary. Exists. In the present invention, the average grain size of the silver halide grains is preferably 0.03 to 0.3 m, more preferably 0.01 to 0.5 m in terms of a sphere equivalent diameter. The spherical equivalent diameter of a halogenated silver particle represents the diameter of a grain having a spherical shape and the same volume. The average particle size of the halogenated silver particles is the temperature, pAg, pH, addition rate of the silver ion solution and the halogen solution, the particle size control agent (for example, 1 Fe-Lu 5 mercaptotetrazole, 2 —Mercaptobenzimidazole, benztriazole, tetrazaindene compounds, nucleic acid derivatives, thioether compounds, etc.) can be combined and controlled as appropriate.
[0030] 本発明にお!/、ては、ハロゲン化銀の含有量 (gZm2)をハロゲン化銀の平均粒径( μ m)で除した値が 6以上 25以下となる態様が好ましい。比較的粒径の小さい感光 性ハロゲンィ匕銀を多量に用いた場合に、この値が 25より大きくなりやすぐこの場合、 フィルム断裁時のエッジ部分にぉ 、て、被膜からハロゲンィ匕銀粒子の滑落などが生 じやすくなる傾向にある。また比較的粒径の大き 、感光性ハロゲン化銀を少量用い た場合にこの値が 6より小さくなりやすぐこの場合、単位面積中の感光性ハロゲンィ匕 銀の粒子個数が少なくなるため、導電性が低下しやす!/、傾向となるためである。 In the present invention, it is preferable that the value obtained by dividing the silver halide content (gZm 2 ) by the average grain size (μm) of silver halide is 6 or more and 25 or less. When a large amount of photosensitive silver halide silver having a relatively small particle size is used, this value becomes larger than 25, and in this case, the silver halide grains slip off from the coating immediately on the edge when the film is cut. Tend to be more likely to occur. In addition, when a small amount of photosensitive silver halide is used, this value becomes smaller than 6 and, in this case, the number of photosensitive silver halide grains in the unit area decreases. This is because it tends to decrease! /.
[0031] 本発明においては、ハロゲンィ匕銀粒子の形状は特に限定されず、例えば、球状、 立方体状、平板状 (6角平板状、 3角形平板状、 4角形平板状等)、 8面体状、 14面 体状等、さまざまな形状であることができる。感度を高くするためにアスペクト比が 2以 上や 4以上、さらに 8〜16であるような平板粒子も好ましく使用することができる。粒子 サイズの分布には特に限定はないが、露光によるパターン形成時に、パターンの輪 郭をシャープに再現させ、高い導電性を維持しながら透明性を高めるという観点から は、狭い分布が好ましい。本発明に係る感光材料に用いられるハロゲンィ匕銀粒子の 粒径分布は、好ましくは変動係数が 0. 22以下、さらに好ましくは 0. 15以下の単分 散ハロゲンィ匕銀粒子である。ここで変動係数は、粒径分布の広さを表す係数であり、 次式によって定義される。 [0031] In the present invention, the shape of the halogen silver halide grains is not particularly limited. For example, spherical, cubic, flat plate (hexagonal flat plate, triangular flat plate, quadrangular flat plate, etc.), octahedral shape, etc. It can be in various shapes such as a 14-sided shape. In order to increase the sensitivity, tabular grains having an aspect ratio of 2 or more, 4 or more, and further 8 to 16 can be preferably used. particle The size distribution is not particularly limited, but a narrow distribution is preferable from the viewpoint of enhancing the transparency while maintaining high conductivity while sharply reproducing the outline of the pattern during pattern formation by exposure. The particle size distribution of the halogen silver halide grains used in the light-sensitive material according to the present invention is preferably monodispersed halogen silver halide grains having a coefficient of variation of 0.22 or less, more preferably 0.15 or less. Here, the variation coefficient is a coefficient representing the breadth of the particle size distribution, and is defined by the following equation.
[0032] 変動係数 =SZR [0032] Coefficient of variation = SZR
(式中、 Sは粒径分布の標準偏差、 Rは平均粒径を表す。 )  (In the formula, S represents the standard deviation of the particle size distribution, and R represents the average particle size.)
本発明で用いられるハロゲンィ匕銀粒子は、さらに他の元素を含有していてもよい。 例えば、写真乳剤において、硬調な乳剤を得るために用いられる金属イオンをドー プすることも有用である。特に鉄イオン、ロジウムイオン、ルテニウムイオンやイリジゥ ムイオン等の第 8〜10族金属イオンは、金属銀像の生成の際に露光部と未露光部 の差が明確に生じやすくなるため好ましく用いられる。 The halogen silver halide grains used in the present invention may further contain other elements. For example, in a photographic emulsion, it is also useful to dope metal ions used to obtain a high contrast emulsion. In particular iron ions, rhodium ions, the first 8-10 metals ions such as ruthenium ions and Irijiu Ion preferably used because the difference between the exposed and unexposed portions in the generation of metallic silver image is likely clearly occur.
[0033] これらの金属イオンは、塩ゃ錯塩の形でハロゲンィ匕銀乳剤に添加することができる 。ロジウムイオン、イリジウムイオンに代表される遷移金属イオンは、各種の配位子を 有する化合物であることもできる。そのような配位子としては、例えば、シアンィ匕物ィォ ンゃハロゲンイオン、チオシアナ一トイオン、ニトロシノレイオン、水、水酸化物イオン等 を挙げることができる。具体的な化合物の例としては、臭化ロジウム酸カリウムやイリジ ゥム酸カリウム等が挙げられる。 [0033] These metal ions can be added to a halogenated silver emulsion in the form of a salt complex. Transition metal ions typified by rhodium ions and iridium ions can also be compounds having various ligands. Examples of such ligands include cyanide ions, halogen ions, thiocyanate ions, nitrocinole ions, water, hydroxide ions, and the like. Specific examples of the compound include potassium bromide rhodate and potassium iridate.
[0034] 本発明にお 、て、ハロゲンィ匕銀に含有される前記金属イオンィ匕合物の含有率は、 ハロゲン化銀 1モル当たり、 10— ω〜 10— 2モル Zモル Agであることが好ましぐ 10— 9〜1[0034] Te you, the present invention, that the content of the metal Ioni匕合product contained in Harogeni匕銀are per mole of silver halide, a 10- ω ~ 10- 2 moles Z mol Ag preferred tool 10- 9-1
0 3モル Zモル Agであることがさらに好まし!/、。 0 3 mol Z mol Ag is more preferred!
[0035] ノ、ロゲン化銀粒子に上述の金属イオンを含有させるためには、該金属化合物をノヽ ロゲン化銀粒子の形成前、ハロゲンィ匕銀粒子の形成中、ハロゲンィ匕銀粒子の形成後 等、物理熟成中の各工程における任意の場所で添加すればよい。また、添カ卩におい ては、重金属化合物の溶液を粒子形成工程の全体ある!、は一部にわたって連続的 に行うことができる。 [0035] In order for silver halide grains to contain the above metal ions, the metal compound is added before the formation of silver halide grains, during the formation of halogenated silver grains, after the formation of halogenated silver grains, etc. What is necessary is just to add in the arbitrary places in each process during physical ripening. In addition, in the additive, the heavy metal compound solution can be continuously formed over a part of the particle forming process.
[0036] 本発明では、さらに感度を向上させるため、写真乳剤で行われる化学増感を施すこ ともできる。化学増感としては、例えば、金、パラジウム、白金増感等の貴金属増感、 無機ィォゥ、または有機ィォゥ化合物によるィォゥ増感等のカルコゲン増感、塩ィ匕錫 、ヒドラジン等還元増感等を利用することができる。 [0036] In the present invention, in order to further improve the sensitivity, chemical sensitization performed in a photographic emulsion is performed. You can also. Chemical sensitization includes, for example, noble metal sensitization such as gold, palladium and platinum sensitization, chalcogen sensitization such as iodo sensitization with inorganic or organic compounds, and reduction sensitization such as sodium chloride tin and hydrazine. Can be used.
[0037] また、ハロゲンィ匕銀粒子には分光増感を施すことが好ましい。  [0037] Further, it is preferable that the silver halide grains are subjected to spectral sensitization.
[0038] 好まし!/、分光増感色素としては、シァニン、カルボシァニン、ジカルボシァニン、複 合シァニン、へミシァニン、スチリル色素、メロシアニン、複合メロシァニン、ホロポーラ 一色素等を挙げることができ、当業界で用いられて 、る分光増感色素を単用ある 、 は併用して使用することができる。 [0038] Preferable! / Spectral sensitizing dyes include cyanine, carbocynin, dicarboyanine, complex cyanine, hemisyanine, styryl dye, merocyanine, complex melocyanin, holopora single dye, etc., which are used in the industry. Thus, the spectral sensitizing dye can be used alone or in combination.
[0039] 特に有用な色素は、シァニン色素、メロシアニン色素、及び複合メロシアニン色素 である。これらの色素類には、その塩基性異節環核として、シァニン色素類に通常利 用される核の何れをも通用できる。すなわち、ピロリン核、ォキサゾリン核、チアゾリン 核、ピロール核、ォキサゾール核、チアゾール核、セレナゾール核、イミダゾール核、 テトラゾール核、ピリジン核及びこれらの核に脂環式炭化水素環が融合した核、及び これらの核に芳香族炭化水素環が融合した核、即ち、インドレニン核、ベンズインドレ ニン核、インドール核、ベンズォキサゾール核、ナフトォキサゾール核、ベンゾチアゾ ール核、ナフトチアゾール核、ベンゾセレナゾール核、ベンズイミダゾール核、キノリ ン核等である。これらの核は、炭素原子上で置換されてもよい。  [0039] Particularly useful dyes are cyanine dyes, merocyanine dyes, and complex merocyanine dyes. For these dyes, any of the nuclei commonly used in cyanine dyes can be used as the basic heterocyclic ring nucleus. That is, a pyrroline nucleus, an oxazoline nucleus, a thiazoline nucleus, a pyrrole nucleus, an oxazole nucleus, a thiazole nucleus, a selenazole nucleus, an imidazole nucleus, a tetrazole nucleus, a pyridine nucleus, and a nucleus in which an alicyclic hydrocarbon ring is fused to these nuclei, and these A nucleus in which an aromatic hydrocarbon ring is fused to the nucleus, that is, an indolenine nucleus, a benzindolenine nucleus, an indole nucleus, a benzoxazole nucleus, a naphthoxazole nucleus, a benzothiazol nucleus, a naphthothiazole nucleus, a benzoselenazole nucleus Benzimidazole nucleus, quinolin nucleus and the like. These nuclei may be substituted on carbon atoms.
[0040] メロシアニン色素または複合メロシアニン色素には、ケトメチレン構造を有する核とし て、ピラゾリンー5 オン核、チォヒダントイン核、 2 チォォキサゾリジン 2, 4 ジ オン核、チアゾリジン 2, 4 ジオン核、ローダニン核、チォバルビツール酸核等の 5から 6員異節環核を適用することができる。  [0040] The merocyanine dye or the complex merocyanine dye includes a pyrazoline-5-one nucleus, a thiohydantoin nucleus, a 2 thoxazolidine 2,4 dione nucleus, a thiazolidine 2,4 dione nucleus, a rhodanine as a nucleus having a ketomethylene structure. 5 to 6-membered heteronuclear ring nuclei such as nucleus and thiobarbituric acid nucleus can be applied.
[0041] これらの増感色素は単独に用いてもよいが、それらの組み合わせを用いてもよい。  [0041] These sensitizing dyes may be used alone or in combination.
増感色素の組み合わせは特に、強色増感の目的でしばしば用いられる。  A combination of sensitizing dyes is often used for the purpose of supersensitization.
[0042] これらの増感色素をハロゲンィ匕銀乳剤中に含有せしめるには、それらを直接乳剤 中に分散してもよいし、あるいは水、メタノール、プロパノール、メチルセ口ソルブ、 2, 2, 3, 3—テトラフルォロプロパノール等の溶媒の単独もしくは混合溶媒に溶解して 孚 L剤へ添カロしてもよい。また、特公昭 44— 23389号、同 44— 27555号、同 57— 22 089号等に記載のように、酸または塩基を共存させて水溶液としたり、米国特許第 3, 822, 135号、同第 4, 006, 025号等【こ記載のよう【こド、デシノレベンゼンスノレホン酸ナ トリウム等の界面活性剤を共存させて水溶液あるいはコロイド分散物としたものを乳剤 へ添加してもよい。また、フエノキシエタノール等の実質上水と非混和性の溶媒に溶 解した後、水または親水性コロイド分散したものを乳剤に添加してもよい。特開昭 53 102733号、同 58— 105141号に記載のように親水性コロイド中に直接分散させ 、その分散物を乳剤に添加してもよい。 [0042] In order to incorporate these sensitizing dyes in a silver halide silver emulsion, they may be dispersed directly in the emulsion, or water, methanol, propanol, methyl mouthsolve, 2, 2, 3, It may be dissolved in a solvent such as 3-tetrafluoropropanol alone or in a mixed solvent and added to the L agent. In addition, as described in Japanese Patent Publication Nos. 44-23389, 44-27555, 57-22 089, etc., an acid or a base is allowed to coexist to form an aqueous solution. 822, 135, 4, 006, 025, etc. [As described herein] Emulsions in the form of aqueous solutions or colloidal dispersions in the presence of surfactants such as sodium chloride, decenorebenzene senorephonate, etc. You may add to. Alternatively, water or a hydrophilic colloid-dispersed solution may be added to the emulsion after being dissolved in a solvent substantially immiscible with water such as phenoxyethanol. As described in JP-A-53102733 and 58-105141, the dispersion may be directly dispersed in a hydrophilic colloid and the dispersion may be added to the emulsion.
[0043] (バインダー) [0043] (Binder)
本発明に係るハロゲン化銀乳剤含有層にお ヽて、ハロゲン化銀粒子を均一に分散 させ、かつハロゲン化銀粒子を支持体上に担持し、ハロゲンィ匕銀乳剤含有層と支持 体の接着性を確保する目的でバインダーを用いる。本発明に用いることができるバイ ンダ一には、特に制限がなぐ非水溶性ポリマー及び水溶性ポリマーのいずれも用 いることができるが、現像性向上の観点からは、水溶性ポリマーを用いることが好まし い。  In the silver halide emulsion-containing layer according to the present invention, the silver halide grains are uniformly dispersed, and the silver halide grains are supported on the support, and the adhesiveness between the silver halide emulsion-containing layer and the support. A binder is used for the purpose of ensuring the above. As the binder that can be used in the present invention, any of a water-insoluble polymer and a water-soluble polymer that are not particularly limited can be used. From the viewpoint of improving developability, a water-soluble polymer can be used. I like it.
[0044] 本発明に係る感光材料には、バインダーとしてゼラチンを用いることが有利である [0044] In the light-sensitive material according to the present invention, it is advantageous to use gelatin as a binder.
1S 必要に応じてゼラチン誘導体、ゼラチンと他の高分子のグラフトポリマー、ゼラチ ン以外のタンパク質、糖誘導体、セルロース誘導体、単一あるいは共重合体のごとき 合成親水性高分子物質等の親水性コロイドも用いることができる。 1S If necessary, hydrophilic colloids such as gelatin derivatives, graft polymers of gelatin and other polymers, proteins other than gelatin, sugar derivatives, cellulose derivatives, synthetic hydrophilic polymer substances such as mono- or copolymers Can be used.
[0045] (紫外線吸収剤)  [0045] (Ultraviolet absorber)
本発明にお ヽては、電磁波遮断フィルムの紫外線による劣化を避けるために紫外 線吸収剤を使用することが好ましい。  In the present invention, it is preferable to use an ultraviolet absorber in order to avoid deterioration of the electromagnetic wave shielding film due to ultraviolet rays.
[0046] 紫外線吸収剤としては、公知の紫外線吸収剤、例えばサリチル酸系化合物、ベン ゾフエノン系化合物、ベンゾトリアゾール系化合物、 S トリアジン系化合物、環状イミ ノエステル系化合物等を好ましく使用することができる。これらの中、ベンゾフヱノン系 化合物、ベンゾトリアゾール系化合物、環状イミノエステル系化合物が好ましい。ポリ エステルに配合するものとしては、特に環状イミノエステル系化合物が好ましい。これ ら紫外線吸収剤の添加層につ 、ては特に制限はな 、が、ハロゲン化銀乳剤含有層 に用いられるバインダーの紫外線による劣化を防止すると 、う観点から、ハロゲンィ匕 銀乳剤含有層への直接添加、あるいはハロゲンィ匕銀乳剤含有層よりも外光に近い方 に設けられる態様が好ましい。ハロゲンィ匕銀乳剤含有層あるいは、それに隣接する 層に添加する場合は、好ま 、紫外線吸収剤としてはべンゾトリアゾール類が挙げら れ、例えば特開平 1— 250944号公報記載の一般式 [III 3]で示される化合物、特 開昭 64— 66646号公報記載の一般 As the ultraviolet absorber, known ultraviolet absorbers such as salicylic acid compounds, benzophenone compounds, benzotriazole compounds, S triazine compounds, cyclic imino ester compounds and the like can be preferably used. Of these, benzophenone compounds, benzotriazole compounds, and cyclic imino ester compounds are preferred. As what is mix | blended with a polyester, especially a cyclic imino ester type compound is preferable. Although there is no particular limitation on the layer to which these ultraviolet absorbers are added, from the viewpoint of preventing deterioration of the binder used in the silver halide emulsion-containing layer due to ultraviolet rays, the addition to the silver halide emulsion-containing layer is difficult. Direct addition, or closer to outside light than the layer containing a halogenated silver emulsion The aspect provided in is preferable. When added to a layer containing a silver halide emulsion or a layer adjacent thereto, benzotriazoles are preferably used as ultraviolet absorbers. For example, a general formula [III 3] described in JP-A-1-250944 can be mentioned. And compounds described in Japanese Patent Publication No. 64-66646
式 [III]で示される化合物、特開昭 63— 187240号公報記載の UV— 1L〜UV— 27 L、特開平 4 1633号公報記載の一般式 [I]で示される化合物、特開平 5— 16514 4号公報記載の一般式 (1)、 (II)で示される化合物などが好ましく用いられる。これら の紫外線吸収剤は、例えばジォクチルフタレート、ジー i デシルフタレート、ジブチ ルフタレート等のフタル酸エステル類、トリクレジルホスフェート、トリオクチルホスフエ ート等の燐酸エステル類などに代表される高沸点有機溶媒に分散した形で添加する 態様が好ましく用いられる。また、これらの紫外線吸収剤を支持体中に直接添加する 態様も好ましく用いられ、この場合、例えば特表 2004— 531611号に記載されたよう な態様も好ましく用いることができる。  Compounds represented by formula [III], UV-1L to UV-27L described in JP-A-63-187240, compounds represented by general formula [I] described in JP-A-41633, JP-A-5- The compounds represented by the general formulas (1) and (II) described in Japanese Patent No. 165144 are preferably used. These ultraviolet absorbers are, for example, high boiling points represented by phthalates such as dioctyl phthalate, di-decyl phthalate, and dibutyl phthalate, and phosphate esters such as tricresyl phosphate and trioctyl phosphate. An embodiment in which it is added in a dispersed form in an organic solvent is preferably used. In addition, an embodiment in which these ultraviolet absorbers are directly added to the support is also preferably used. In this case, for example, an embodiment described in JP-T-2004-531611 can also be preferably used.
[0047] (黒化処理) [0047] (Blackening treatment)
本発明においては、フィルム表面での外光反射を防止するという観点から、黒ィ匕処 理を施すことが好まし ヽ。このような黒ィ匕処理を施した透明電磁波遮断フィルムを例 えば PDPなどのディスプレイに用いた場合、外光反射によるコントラストの低下を軽 減できるとともに、非使用時の画面の色調を黒く高品位に保つことができ好ましい。 黒ィ匕処理の方法としては、特に制限はなぐ既知の手法を適宜、単独あるいは組み 合わせて用いることができる。例えば導電性パターンの最表面が金属銅力も成る場 合には、亜塩素酸ナトリウム、水酸化ナトリウム、リン酸三ナトリウムを含んでなる水溶 液に浸漬して酸化処理する方法、あるいはピロリン酸銅、ピロリン酸カリウム、アンモ ユアを含んで成る水溶液に浸漬し、電解めつきを行うことにより、黒化処理する方法、 などを好ましく用いることができる。また、導電性パターンの最表層がニッケル一リン 合金被膜から成る場合は、塩化銅 (II)または硫酸銅 (11)、塩ィ匕ニッケルまたは硫酸- ッケル、及び塩酸を含有する酸性黒化処理液中に浸漬する方法を好ましく用いること ができる。  In the present invention, it is preferable to perform blackening treatment from the viewpoint of preventing reflection of external light on the film surface. For example, when a transparent electromagnetic wave shielding film that has undergone such blackening treatment is used in a display such as a PDP, it is possible to reduce the decrease in contrast due to reflection of external light and to make the screen color tone black when not in use. It is preferable that it can be maintained. As the black wrinkle processing method, known methods without particular limitation can be used alone or in combination as appropriate. For example, when the outermost surface of the conductive pattern is also made of metallic copper, it can be immersed in an aqueous solution containing sodium chlorite, sodium hydroxide, or trisodium phosphate and oxidized, or copper pyrophosphate, A method of blackening by immersing in an aqueous solution containing potassium pyrophosphate and ammonia and performing electrolytic plating can be preferably used. When the outermost layer of the conductive pattern is made of a nickel-phosphorus alloy film, an acidic blackening solution containing copper (II) chloride or copper sulfate (11), nickel chloride or sulfuric acid-nickel, and hydrochloric acid. The method of immersing in can be preferably used.
[0048] また、上述の方法以外にも、表面を微粗面化する方法によっても黒ィ匕処理が可能 であるが、高い導電性を維持するという観点力もは、表面の微粗面化よりも、酸化に よる黒化処理の方法が好まし ヽ。 [0048] In addition to the above method, black wrinkle processing is also possible by a method of roughening the surface. However, from the viewpoint of maintaining high conductivity, the blackening method using oxidation is preferred to the finer surface.
[0049] 〔硬調化剤〕  [0049] [High contrast agent]
本発明においては、エッジが明瞭な導電性パターンを描くために、感光材料は硬 調である態様が好ましぐその方法として、塩ィ匕銀含有量を高くして粒径の分布を狭 くする方法、あるいはヒドラジンィ匕合物ゃテトラゾリゥム化合物を硬調化剤として使用 することが好ましい。ヒドラジンィ匕合物は、 NHNH 基を有する化合物であり、代 表的なものを下記一般式(1)で示す。  In the present invention, in order to draw a conductive pattern with a clear edge, a method in which the photosensitive material is a high contrast is preferred. As a method for this, a high silver salt content is used to narrow the particle size distribution. It is preferable to use a hydrazine compound or a tetrazolium compound as a thickening agent. A hydrazine compound is a compound having an NHNH group, and a typical one is represented by the following general formula (1).
[0050] 一般式(1) T NHNHCO— V、T NHNHCOCO— V  [0050] General formula (1) T NHNHCO— V, T NHNHCOCO— V
式中、 Tは各々置換されてもよいァリール基、ヘテロ環基を表す。 Tで表されるァリ 一ル基はベンゼン環やナフタレン環を含むもので、この環は置換基を有してもよく、 好ましい置換基として直鎖、分岐のアルキル基 (好ましくは炭素数 1〜20のメチル基 、ェチル基、イソプロピル基、 n—ドデシル基等)、アルコキシ基 (好ましくは炭素数 2 〜21のメトキシ基、エトキシ基等)、脂肪族ァシルァミノ基 (好ましくは炭素数 2〜21の アルキル基を持つ、ァセチルァミノ基、ヘプチルァミノ基等)、芳香族ァシルァミノ基 等が挙げられ、これらの他に、例えば上記のような置換または未置換の芳香族環が — CONH―、— O—、 -SO NH―、— NHCONH―、— CH CH = N―、等の連  In the formula, each T represents an optionally substituted aryl group or heterocyclic group. The aryl group represented by T includes a benzene ring or a naphthalene ring, and this ring may have a substituent. As a preferable substituent, a linear or branched alkyl group (preferably having a carbon number of 1 To 20 methyl group, ethyl group, isopropyl group, n-dodecyl group, etc.), alkoxy group (preferably methoxy group having 2 to 21 carbon atoms, ethoxy group etc.), aliphatic isylamino group (preferably 2 to 21 carbon atoms) Acetylamino group, heptylamino group, etc.), aromatic isylamino groups, etc., in addition to these, for example, the substituted or unsubstituted aromatic rings as described above are —CONH—, —O—, -SO NH—, — NHCONH—, —CH CH = N—, etc.
2 2  twenty two
結基で結合しているものも含む。 Vは水素原子、置換されてもよいアルキル基 (メチル 基、ェチル基、ブチル、トリフロロメチル基等)、ァリール基(フエ-ル基、ナフチル基) 、ヘテロ環基 (ピリジル基、ピペリジル基、ピロリジル基、フラニル基、チォフェン基、ピ ロール基等)を表す。  Including those bonded by a linking group. V is a hydrogen atom, an optionally substituted alkyl group (methyl group, ethyl group, butyl, trifluoromethyl group, etc.), aryl group (phenyl group, naphthyl group), heterocyclic group (pyridyl group, piperidyl group, Pyrrolidyl group, furanyl group, thiophene group, pyrrole group and the like).
[0051] 上述のヒドラジンィ匕合物は、米国特許第 4, 269, 929号の記載を参考にして合成 することができる。ヒドラジンィ匕合物はハロゲンィ匕銀粒子含有層中、またはハロゲンィ匕 銀粒子含有層に隣接する親水性コロイド層中、さらには他の親水性コロイド層中に含 有せしめることがでさる。  [0051] The hydrazine compound described above can be synthesized with reference to the description in US Pat. No. 4,269,929. The hydrazine compound can be contained in the halogen-containing silver particle-containing layer, in the hydrophilic colloid layer adjacent to the halogen-containing silver particle-containing layer, or in another hydrophilic colloid layer.
[0052] 特に好ま 、ヒドラジンの化合物を下記に挙げる。  [0052] Particularly preferred are the following compounds of hydrazine.
(H― 1 ): 1―トリフロロメチルカルボ-ル― 2— {〔4— (3— n—ブチルウレイド)フエ- ル〕 }ヒドラジン (H 2) : l トリフロロメチルカルボ-ルー2—{4ー〔2—(2, 4—ジー 61:1;—ぺンチ ルフエノキシ)ブチルアミド〕フエ-ル}ヒドラジン (H-1): 1-trifluoromethylcarbole 2— {[4— (3-n-butylureido) phenol]} hydrazine (H 2): l Trifluoromethyl carboru 2- {4- [2- (2, 4-Gee 61: 1; -Pentylphenoxy) butyramide] phenol} hydrazine
(H— 3) : 1— (2, 2, 6, 6—テトラメチルピペリジル一 4 アミノーォキザリル)一 2— { 4一〔2— (2, 4ージ—tert ペンチルフエノキシ)ブチルアミド〕フエ-ル}ヒドラジン (H— 3): 1— (2, 2, 6, 6-tetramethylpiperidyl 4-amino-oxalyl) 1 2-— {4 1 [2- (2, 4-di-tert pentylphenoxy) Butyramide] phenol} hydrazine
(H— 4) : 1— (2, 2, 6, 6—テ卜ラメチルピペリジル— 4 ァミノ—ォキザリル)— 2— { 4一〔2— (2, 4ージ tert ペンチルフエノキシ)ブチルアミド〕フエ-ルスルホンアミ ドフエ-ル}ヒドラジン (H— 4): 1— (2, 2, 6, 6-tetramethylpiperidyl-4 amino-oxalyl) — 2— {4 1 [2- (2, 4-di tert pentylphenoxy) butyramide ] Fuelsulfonamidophenol} hydrazine
(H— 5) : 1— (2, 2, 6, 6—テトラメチルピペリジル一 4 アミノーォキザリル)一 2— ( 4— (3— (4—クロ口フエ-ルー 4—フエ-ルー 3—チア一ブタンアミド)ベンゼンスル ホンアミド)フエ-ル)ヒドラジン  (H— 5): 1— (2, 2, 6, 6—tetramethylpiperidyl 4-aminooxalyl) 1 2— (4— (3— (4—black mouth ferru) 4—hue ru 3-thiabutanamide) benzenesulfonamide) phenol) hydrazine
(H— 6) : 1— (2, 2, 6, 6—テ卜ラメチルピペリジル— 4 ァミノ—ォキザリル)— 2— ( 4— (3—チア一 6, 9, 12, 15—テトラオキサトリコサンアミド)ベンゼンスルホンアミド) フ ニルヒドラジン  (H— 6): 1— (2, 2, 6, 6-tetramethylpiperidyl— 4-amino-oxalyl) — 2— (4— (3-thia 6, 9, 12, 15-tetraoxatrico Sanamide) benzenesulfonamide) phenylhydrazine
(H— 7) : 1—(1ーメチレンカルボ-ルピリジ-ゥム)ー2—(4ー(3 チア 6, 9, 12 , 15—テトラオキサトリコサンアミド)ベンゼンスルホンアミド)フエニルヒドラジンクロライ ド、。  (H—7): 1— (1-Methylenecarbo-pyridylum) -2- (4- (3 thia 6, 9, 12, 15, 15-tetraoxatricosanamide) benzenesulfonamide) phenylhydrazine chloride ,.
[0053] 硬調化剤としてヒドラジンを使用するときに、ヒドラジンの還元作用を強化するため にアミンィ匕合物またはピリジンィ匕合物を好ましく用いることができる。ヒドラジンィ匕合物 の還元作用を促進するアミンィ匕合物としては、分子中にピぺリジン環またはピロリジン 環が少なくとも 1個、チォエーテル結合が少なくとも 1個、エーテル結合が少なくとも 2 個あることが特に好ましい。  [0053] When hydrazine is used as the thickening agent, an amine compound or a pyridine compound can be preferably used in order to enhance the reducing action of hydrazine. As the amine compound that promotes the reduction action of the hydrazine compound, it is particularly preferable that the molecule has at least one piperidine ring or pyrrolidine ring, at least one thioether bond, and at least two ether bonds. .
[0054] ヒドラジンの還元作用を促進する化合物として、上述のアミンィ匕合物の他にピリジ- ゥム化合物やホスホ-ゥム化合物も好ましく用いることができる。ォ -ゥム化合物は、 正電荷を帯びているため、負電荷に帯電しているハロゲンィ匕銀粒子に吸着して、現 像時の現像主薬からの電子注入を促進することにより硬調化を促進するものと考えら れている。好ましいピリジ-ゥム化合物は、特開平 5— 53231号、同 6— 242534号 のビスピリジ-ゥム化合物を参照することができる。特に好まし 、ピリジ -ゥム化合物 は、ピリジ-ゥムの 1位または 4位で連結してビスピリジ-ゥム体を形成して!/、るもので ある。塩としては、ハロゲンァ-オンとして、塩素イオンや臭素イオン等が好ましぐ他 に 4フッ化ほう素イオン、過塩素酸イオン等が挙げられる力 塩素イオンまたは 4フッ ィ匕ほう素イオンが好ましい。 [0054] As the compound that promotes the reducing action of hydrazine, pyridinium compounds and phosphonium compounds can be preferably used in addition to the above-mentioned amine compounds. Since the o-um compound is positively charged, it is adsorbed on the negatively charged halogen-molybdenum grains and promotes electron injection from the developing agent at the time of image formation, thereby promoting high contrast. It is thought to do. As preferred pyridinium compounds, reference can be made to the bispyridium compounds disclosed in JP-A-5-53231 and JP-A-6-242534. Particularly preferred pyridi-um compounds are those that are linked at the 1st or 4th position of the pyridium to form a bispyridumum! /, is there. As the salt, chlorine ion or bromine ion is preferred as a halogen ion, and in addition, a force such as boron tetrafluoride ion, perchlorate ion, etc. Chlorine ion or 4 fluorine boron ion is preferred.
[0055] ヒドラジンィ匕合物、アミンィ匕合物、ピリジ-ゥム化合物、及びテトラゾリゥム化合物は ハロゲン化銀 1モル当たり 1 X 10— 6〜5 X 10— 2モル含有するのが好ましぐ特に 1 X 10 一4〜 2 X 10—2モルが好ましい。これらの化合物の添加量を調節して硬調化度 γを 6以 上〖こすることは容易である。 [0055] Hidorajini匕合thereof, Amini匕合thereof, pyrid - © beam compounds, and Tetorazoriumu compound per mol of silver halide 1 X 10- 6 ~5 X 10- 2 mol preferably tool especially 1 to contain X 10 one 4 ~ 2 X 10- 2 mol is preferred. It is easy to adjust the addition amount of these compounds to increase the degree of contrast γ to 6 or more.
[0056] これらの化合物はハロゲン化粒子を含む層または他の親水性コロイド層に添加して 使用する。水溶性の場合には水溶液にして、水不溶性の場合にはアルコール類、ェ ステル類、ケトン類等の水に混和しうる有機溶媒の溶液としてハロゲン化銀粒子溶液 または親水性コロイド溶液に添加すればよい。また、これらの有機溶媒に溶けないと きには、ボールミル、サンドミル、ジェットミル等で 0. 01〜10 /ζ πιの大きさの微粒子に して添加することができる。微粒子分散の方法は、写真添加剤である染料の固体分 散の技術を好ましく応用することができる。例えば、ボールミル、遊星回転ボールミル 、振動ボールミル、ジェットミル等の分散機を使用して所望の粒子径にすることができ る。分散時に界面活性剤を使用すると分散後の安定性を向上させることができる。  [0056] These compounds are used by being added to a layer containing halogenated particles or another hydrophilic colloid layer. If it is water-soluble, it is added to an aqueous solution, and if it is water-insoluble, it is added to a silver halide grain solution or hydrophilic colloid solution as a solution of an organic solvent miscible with water, such as alcohols, esters, and ketones. That's fine. Further, when it is not soluble in these organic solvents, it can be added as fine particles having a size of 0.01 to 10 / ζ πι by a ball mill, a sand mill, a jet mill or the like. As the fine particle dispersion method, a technique of solid dispersion of a dye as a photographic additive can be preferably applied. For example, a desired particle size can be obtained using a dispersing machine such as a ball mill, a planetary rotating ball mill, a vibrating ball mill, or a jet mill. When a surfactant is used at the time of dispersion, stability after dispersion can be improved.
[0057] 〔支持体〕  [0057] [Support]
本発明においては、支持体として例えば、セルロースエステル系フィルム、ポリエス テル系フィルム、ポリカーボネート系フィルム、ポリアリレート系フィルム、ポリスルホン( ポリエーテルスルホンも含む)系フィルム、ポリエチレンテレフタレート、ポリエチレンナ フタレート等のポリエステルフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、 セロファン、セノレロースジアセテートフイノレム、セノレロースアセテートブチレートフィノレ ム、ポリ塩化ビ-リデンフィルム、ポリビュルアルコールフィルム、エチレンビュルアル コールフィルム、シンジォタクティックポリスチレン系フィルム、ポリカーボネートフィル ム、ノルボルネン榭脂系フィルム、ポリメチルペンテンフィルム、ポリエーテルケトンフィ ルム、ポリエーテルケトンイミドフィルム、ポリアミドフィルム、フッ素榭脂フィルム、ナイ ロンフィルム、ポリメチルメタタリレートフィルムまたはアクリルフィルム等を用いることが できる。また、これらプラスチックフィルム以外に、石英ガラス、ソーダガラス等も用いる ことが可能である。 In the present invention, as a support, for example, a cellulose ester film, a polyester film, a polycarbonate film, a polyarylate film, a polysulfone (including polyethersulfone) film, a polyester film such as polyethylene terephthalate and polyethylene naphthalate , Polyethylene film, Polypropylene film, Cellophane, Senorelose diacetate Finolem, Senorelose acetate butyrate phenolome, Polyvinylidene chloride film, Polybulol alcohol film, Ethylene butyl alcohol film, Syndiotactic polystyrene film , Polycarbonate film, norbornene resin film, polymethylpentene film, polyether ketone film, Li polyether ketone imide film, a polyamide film, a fluorine 榭脂 film, a nylon film, polymethyl methacrylate Tari acetate film or an acrylic film or the like. In addition to these plastic films, quartz glass and soda glass are also used. It is possible.
[0058] 中でも、セルローストリアセテートフィルム、ポリカーボネートフィルム、ポリスルホン( ポリエーテルスルホンを含む)、ポリエチレンテレフタレートフィルムが好ましく用いら れる。  Of these, cellulose triacetate film, polycarbonate film, polysulfone (including polyethersulfone), and polyethylene terephthalate film are preferably used.
[0059] 本発明にお 、ては、透明性、等方性、接着性等の観点から、支持体としてはセル口 ースエステルフィルムまたはポリエステルフィルムを用いることが特に好まし 、。  [0059] In the present invention, it is particularly preferable to use a cellulose ester film or a polyester film as the support from the viewpoints of transparency, isotropicity, adhesiveness, and the like.
[0060] 本発明の電磁波遮断材料をディスプレイの表示画面に用いる場合には、高い透明 性が要求されるため、支持体自体の透明性も高いことが望ましい。この場合における プラスチックフィルムまたはガラス板の全可視光域の平均透過率は好ましくは 85〜1 00%であり、より好ましくは 90〜: LOO%である。また、本発明では、色調調節剤として 前記プラスチックフィルムまたはガラス板を本発明の目的を妨げない程度に着色した ちのを用いることちでさる。  [0060] When the electromagnetic wave shielding material of the present invention is used for a display screen of a display, high transparency is required. Therefore, it is desirable that the support itself has high transparency. In this case, the average transmittance of the plastic film or glass plate in the entire visible light region is preferably 85 to 100%, more preferably 90 to: LOO%. Further, in the present invention, as the color tone adjusting agent, the plastic film or glass plate that has been colored to such an extent that the object of the present invention is not hindered is used.
[0061] 本発明にお!/、て、可視光域の平均透過率とは、 400〜700nmまでの可視光領域 の透過率を、少なくとも 5nm毎に測定して求めた可視光域の各透過率を積算し、そ の平均値として求めたものと定義する。  [0061] In the present invention, the average transmittance in the visible light region means that each transmittance in the visible light region determined by measuring the transmittance in the visible light region from 400 to 700 nm at least every 5 nm. The rate is defined as the average value obtained by accumulating the rates.
[0062] 測定にお!、ては、測定ァパチヤ一を、前述のメッシュパターンより十分大きくとって おく必要があり、少なくともメッシュの格子面積より 100倍以上大きな面積で測定して 求める。  [0062] For measurement, the measurement parameter must be sufficiently larger than the mesh pattern described above, and is obtained by measuring at least 100 times larger than the mesh area of the mesh.
[0063] 本発明に用いる支持体の厚さには特に制限はないが、透過率の維持及び取り扱い 性の観点から、 5〜200 mであることが好ましぐ 30〜150 /ζ πιであることがさらに 好ましい。  [0063] The thickness of the support used in the present invention is not particularly limited, but from the viewpoint of maintaining transmittance and handling, it is preferably 5 to 200 m, and preferably 30 to 150 / ζ πι. More preferably.
[0064] 〔露光〕  [Exposure]
本発明では、後述する現像'補力処理により、導電性パターンを形成するために、 感光材料の露光を行う。露光に用いられる光源としては例えば、可視光線、紫外線 等の光、電子線、 X線等の放射線等が挙げられるが、紫外線または近赤外線を用い ることが好ましい。さらに露光には波長分布を有する光源を利用してもよぐ波長分布 の狭い光源を用いてもよい。  In the present invention, the photosensitive material is exposed in order to form a conductive pattern by a development process described later. Examples of the light source used for exposure include light such as visible light and ultraviolet light, radiation such as electron beam and X-ray, and ultraviolet light or near infrared light is preferably used. Further, a light source having a narrow wavelength distribution may be used for exposure, or a light source having a wavelength distribution may be used.
[0065] 可視光線は必要に応じてスペクトル領域に発光を示す各種発光体が用いられる。 例えば、赤色発光体、緑色発光体、青色発光体のいずれか 1種または 2種以上が混 合されて用いられる。スペクトル領域は、上記の赤色、緑色及び青色に限定されず、 黄色、橙色、紫色あるいは赤外領域に発光する蛍光体も用いられる。また、紫外線ラ ンプも好ましぐ水銀ランプの g線、水銀ランプの i線等も利用される。 As the visible light, various light emitters that emit light in the spectral region are used as necessary. For example, one or more of a red luminescent material, a green luminescent material, and a blue luminescent material may be used in combination. The spectral region is not limited to the above red, green, and blue, and phosphors that emit light in the yellow, orange, purple, or infrared region are also used. In addition, mercury lamp g-line, mercury lamp i-line, etc., which favor ultraviolet lamps, are also used.
[0066] また、本発明では、露光は種々のレーザービームを用いて行うことができる。例えば 、ガスレーザー、発光ダイオード、半導体レーザー、半導体レーザーまたは半導体レ 一ザ一を励起光源に用いた固体レーザーと非線形光学結晶を組合わせた第二高調 波発光光源 (SHG)等の単色高密度光を用いた走査露光方式を好ましく用いること ができ、さらに KrFエキシマレーザー、 ArFエキシマレーザー、 Fレーザー等も用い [0066] In the present invention, exposure can be performed using various laser beams. For example, monochromatic high-density light such as gas laser, light emitting diode, semiconductor laser, semiconductor laser or solid-state laser using a semiconductor laser as a pumping light source and second harmonic light source (SHG) combining nonlinear optical crystal Can be used preferably, and KrF excimer laser, ArF excimer laser, F laser, etc. can also be used.
2  2
ることができる。システムをコンパクトで、迅速なものにするために、露光は、半導体レ 一ザ一、半導体レーザーあるいは固体レーザーと非線形光学結晶を組合わせた第 二高調波発生光源 (SHG)を用いて行うことが好ましい。特にコンパクトで、迅速、さ らに寿命が長ぐ安定性が高い装置を設計するためには、露光は半導体レーザーを 用いて行うことが好ましい。  Can. In order to make the system compact and rapid, exposure should be performed using a semiconductor laser, a semiconductor laser or a second harmonic generation light source (SHG) that combines a solid-state laser and a nonlinear optical crystal. preferable. In order to design an apparatus that is particularly compact, quick, and has a long life and high stability, exposure is preferably performed using a semiconductor laser.
[0067] レーザー光源としては、具体的には、紫外半導体、青色半導体レーザー、緑色半 導体レーザー、赤色半導体レーザー、近赤外レーザー等が好ましく用いられる。  [0067] As the laser light source, specifically, an ultraviolet semiconductor, a blue semiconductor laser, a green semiconductor laser, a red semiconductor laser, a near infrared laser, or the like is preferably used.
[0068] ハロゲン化銀乳剤含有層を画像状に露光する方法は、フォトマスクを利用した面露 光で行ってもよいし、レーザービームによる走査露光で行ってもよい。この際、レンズ を用いた集光式露光でも反射鏡を用いた反射式露光でもよぐ面々接触露光、近接 場露光、縮小投影露光、反射投影露光等の露光方式を用いることができる。レーザ 一の出力は、ハロゲン化銀を感光させるのに適した量であればよいので数十 μ W〜 5W程度でよい。  [0068] The method for exposing the silver halide emulsion-containing layer to an image may be performed by surface exposure using a photomask or by scanning exposure using a laser beam. At this time, exposure methods such as surface contact exposure, near-field exposure, reduced projection exposure, and reflection projection exposure may be used, such as condensing exposure using a lens or reflection exposure using a reflecting mirror. The output of the laser may be about several tens of μW to 5W, as long as it is an amount suitable for exposing silver halide.
[0069] 〔現像処理〕  [Development processing]
本発明では、感光材料を露光した後、現像処理が行われる。現像処理は、発色現 像主薬を含有しな 、、 V、わゆる黒白現像処理であることが好ま 、。  In the present invention, after the photosensitive material is exposed, development processing is performed. The development process is preferably a black and white development process that does not contain a color developing agent.
[0070] 現像処理液としては、現像主薬としてノ、イドロキノン、ノ、イド口キノンスルホン酸ナトリ ゥム、クロルハイドロキノン等のハイドロキノン類の他に、 1—フエ-ルー 3—ビラゾリド ン、 1—フエニル一 4, 4 ジメチル一 3 ピラゾリドン、 1—フエニル一 4—メチル 4 -ヒドロキシメチル 3 ビラゾリドン、 1 フエニル 4 メチル 3 ビラゾリドン等 のビラゾリドン類及び N—メチルパラアミノフエノール硫酸塩等の超加成性現像主薬 と併用することができる。また、ハイドロキノンを使用しないでァスコルビン酸やイソァ スコルビン酸等レダクトン類ィ匕合物を上記超加成性現像主薬と併用することが好まし い。 [0070] In addition to hydroquinones such as rho, idroquinone, rhodium, iodoquinone sulfonic acid sodium and chlorohydroquinone as developing agents, 1-phenol 3-virazolidone, 1-phenyl as a developing agent. 1, 4, dimethyl 1, 3 pyrazolidone, 1-phenyl 1, 4-methyl 4 -It can be used in combination with virazolidones such as hydroxymethyl 3 bisazolidone, 1 phenyl 4 methyl 3 bisazolidone and superadditive developing agents such as N-methylparaaminophenol sulfate. In addition, it is preferable to use a reductone compound such as ascorbic acid or isoascorbic acid in combination with the above superadditive developing agent without using hydroquinone.
[0071] また、現像処理液には保恒剤として亜硫酸ナトリウム塩や亜硫酸カリウム塩、緩衝 剤として炭酸ナトリウム塩や炭酸カリウム塩、現像促進剤としてジエタノールァミン、トリ エタノールァミン、ジェチルァミノプロパンジオール等を適宜使用できる。  [0071] Further, in the development processing solution, sodium sulfite and potassium sulfite as preservatives, sodium carbonate and potassium carbonate as buffers, diethanolamine, triethanolamine, and jetylamino as development accelerators. Propanediol or the like can be used as appropriate.
[0072] 現像処理で用いられる現像処理液は、画質を向上させる目的で、画質向上剤を含 有することができる。画質向上剤としては、例えば、 1—フエ-ルー 5—メルカプトテト ラゾール、 5—メチルベンゾトリアゾール等の含窒素へテロ環化合物を挙げることがで きる。  [0072] The development processing solution used in the development processing can contain an image quality improving agent for the purpose of improving the image quality. Examples of the image quality improver include nitrogen-containing heterocyclic compounds such as 1-ferro-5-mercaptotetrazole and 5-methylbenzotriazole.
[0073] 本発明においては、露光後に行われる現像処理が、定着前物理現像を含んでいる ことが好ましい。ここで言う定着前物理現像とは、後述の定着処理を行う前に、露光 により潜像を有するハロゲン化銀粒子の内部以外力ゝら銀イオンを供給し、現像銀を 補強するプロセスのことを示す。現像処理液から銀イオンを供給するための具体的な 方法としては、例えば予め現像処理液中に硝酸銀等を溶解しておき銀イオンを溶か しておく方法、あるいは現像液中に、チォ硫酸ナトリウム、チォシアン酸アンモニゥム 等のようなハロゲンィ匕銀溶剤を溶解しておき、現像時に未露光部のハロゲン化銀を 溶解させ、潜像を有するハロゲン化銀粒子の現像を補力する方法等が挙げられる。  In the present invention, it is preferable that the development processing performed after exposure includes physical development before fixing. The pre-fixing physical development referred to here is a process for reinforcing developed silver by supplying silver ions other than the inside of the silver halide grains having a latent image by exposure before performing the fixing process described later. Show. As a specific method for supplying silver ions from the developing solution, for example, a method in which silver nitrate or the like is dissolved in advance in the developing solution and silver ions are dissolved, or thiosulfuric acid is added in the developing solution. Examples include a method in which a halogenated silver solvent such as sodium or ammonium thiocyanate is dissolved, and unexposed silver halide is dissolved during development to assist development of silver halide grains having a latent image. It is done.
[0074] 本発明にお ヽては、現像液中に予めハロゲン化銀溶剤を溶解しておく処方を用い た方が、未露光部でのカプリ発生による、フィルムの透過率低下を抑制できるため好 ましい。  In the present invention, the use of a formulation in which a silver halide solvent is dissolved in advance in a developer can suppress a decrease in film transmittance due to the occurrence of capri in the unexposed area. It is preferable.
[0075] 本発明における現像処理にぉ ヽては、露光されたハロゲン化銀粒子の現像終了後 に、未露光部分のハロゲンィ匕銀粒子を除去して安定化させる目的で行われる定着処 理を行う。本発明における定着処理は、ハロゲン化銀粒子を用いた写真フィルムや 印画紙等で用いられる定着液処方を用いることができる。定着処理で使用する定着 液は、定着剤としてチォ硫酸ナトリウム、チォ硫酸カリウム、チォ硫酸アンモ-ゥム等 を使用することができる。定着時の硬膜剤として硫酸アルミゥム、硫酸クロミゥム等を 使用することができる。定着剤の保恒剤としては、現像処理液で述べた亜硫酸ナトリ ゥム、亜硫酸カリウム、ァスコルビン酸、エリソルビン酸等を使用することができ、その 他にクェン酸、蓚酸等を使用することができる。 [0075] In the development process of the present invention, after the development of the exposed silver halide grains, a fixing process is carried out for the purpose of removing and stabilizing the unexposed portions of the silver halide grains. Do. For the fixing treatment in the present invention, a fixer formulation used for photographic films, photographic papers and the like using silver halide grains can be used. Fixing solution used in fixing process is sodium thiosulfate, potassium thiosulfate, ammonium thiosulfate, etc. Can be used. Aluminum sulfate, chromium sulfate, etc. can be used as a hardener for fixing. As the preservative for the fixing agent, sodium sulfite, potassium sulfite, ascorbic acid, erythorbic acid, etc. described in the developing solution can be used, and in addition, citrate, oxalic acid, etc. can be used. .
[0076] 本発明に使用する水洗水には、防黴剤として N—メチルーイソチアゾールー 3—ォ ン、 N—メチルーイソチアゾールー 5—クロロー 3—オン、 N—メチルーイソチアゾール -4, 5—ジクロロー 3—オン、 2—二トロー 2—ブロムー3—ヒドロキシプロパノール, 2 —メチルー 4—クロ口フエノール、過酸ィ匕水素等を使用することができる。  In the washing water used in the present invention, N-methyl-isothiazole-3-one, N-methyl-isothiazol-5-chloro-3-one, N-methyl-isothiazole- 4,5-Dichloro-3-one, 2-Nitroe 2-Bromue 3-hydroxypropanol, 2-Methyl-4-chlorophenol, hydrogen peroxide, etc. can be used.
[0077] 〔補力処理〕  [0077] [Reinforcement processing]
本発明においては、上述の現像処理によって形成された現像銀同士の接触を補 助し、導電性を高めるために補力処理を行うことが好ましい。本発明において補カ処 理とは、現像処理中、あるいは処理後に、予め感光材料中に含有されていない導電 性物質源を外部から供給し、導電性を高める処理のことを指し、具体的な方法として は、例えば物理現像、あるいはめっき処理等を挙げることができる。物理現像は、潜 像を有するハロゲン化銀乳剤を含有する感光材料を、銀イオンあるいは銀錯イオンと 還元剤を含有する処理液に浸漬することで、これを施すことができる。本発明におい ては、物理現像の現像開始点が潜像核だけでなぐ現像銀が物理現像開始点となつ た場合にっ ヽても物理現像と定義し、これを好ましく用いることができる。  In the present invention, it is preferable to perform a helping process in order to assist the contact between the developed silvers formed by the above-described developing process and increase the conductivity. In the present invention, the complementary processing refers to processing for improving the conductivity by supplying a conductive material source not previously contained in the photosensitive material from the outside during or after the development processing. Examples of the method include physical development or plating treatment. Physical development can be performed by immersing a photosensitive material containing a silver halide emulsion having a latent image in a processing solution containing silver ions or silver complex ions and a reducing agent. In the present invention, even when developed silver where the development start point of physical development is only the latent image nucleus becomes the physical development start point, it is defined as physical development and can be preferably used.
[0078] 本発明において、めっき処理には従来公知の種々のめつき方法を用いることができ 、例えば電解めつき及び無電解めつきを単独、あるいは組み合わせて実施することが できる。中でも、電流分布ムラによるめつきムラが発生しない無電解めつきを好ましく 用いることができる。無電解めつきに用いることができる金属としては、例えば銅、 -ッ ケル、コバルト、すず、銀、金、白金、その他各種合金を用いることができる力 めっき 処理が比較的容易であり、かつ高い導電性を得やすいという観点から、銅無電解め つきを用いることが特に好まし 、。  In the present invention, various conventionally known plating methods can be used for the plating treatment. For example, electrolytic plating and electroless plating can be carried out singly or in combination. Among these, electroless plating that does not cause unevenness due to current distribution unevenness can be preferably used. As metals that can be used for electroless plating, for example, copper, nickel, cobalt, tin, silver, gold, platinum, and other various alloys can be used. From the viewpoint of easily obtaining conductivity, it is particularly preferable to use a copper electroless plating.
[0079] なお、補力処理は現像中、現像後定着前、定着処理後のいずれのタイミングにお いても実施可能であるが、フィルムの透明性を高く維持するという観点から、定着処 理後に実施することが好ま 、。 [0080] 本発明において、物理現像または金属めつきにより付与された金属量力 感光材 料を露光、現像処理することにより得られた現像銀に対して、質量換算で 10倍以上 1 00倍以下である態様が好ましい。この値は、物理現像または金属めつきを施す前後 において、感光材料中に含有される金属を、例えば蛍光 X線分析などで定量するこ とによって求めることができる。物理現像または金属めつきにより付与された金属量が[0079] It should be noted that the intensification process can be performed at any time during development, after development, before fixing, and after fixing process, but from the viewpoint of maintaining high transparency of the film, after the fixing process. Preferred to carry out. [0080] In the present invention, it is 10 times or more and 100 times or less in terms of mass with respect to developed silver obtained by exposing and developing a metal amount-sensitive material provided by physical development or metal plating. Some embodiments are preferred. This value can be determined by quantifying the metal contained in the light-sensitive material by, for example, fluorescent X-ray analysis before and after physical development or metal plating. The amount of metal applied by physical development or metal plating
、感光材料を露光、現像処理することにより得られた現像銀に対して、質量換算で 10 倍未満である場合、導電性がやや低下する傾向となりやすぐまた、 100倍より大き い場合には、導電性メッシュパターン部以外の不要な部分への金属析出による透過 率の低下が生じやすい傾向となる。 If the developed silver obtained by exposing and developing the light-sensitive material is less than 10 times in terms of mass, the conductivity tends to decrease slightly. In addition, the transmittance tends to decrease due to metal deposition on unnecessary portions other than the conductive mesh pattern portion.
[0081] 尚、本発明においては、物理現像または金属めつきという記載は、物理現像または めっき処理の少なくとも 1方の処理を施すことを意味し、物理現像及び金属めつきの 両方を含んでも良 、ことを意味し、本発明にお 、ては物理現像及び金属めつきの両 方の処理を施すことが好まし 、。  [0081] In the present invention, the description of physical development or metal plating means that at least one of physical development or plating treatment is performed, and both physical development and metal plating may be included. In the present invention, it is preferable to perform both physical development and metal plating.
[0082] 〔酸化処理〕  [Oxidation treatment]
本発明にお ヽては、現像処理あるいは物理現像またはめつき処理後に酸化処理を 行うことが好ましい。酸化処理により、不要な金属成分をイオン化して溶解除去するこ とが可能となり、フィルムの透過率をより高めることが可能となる。  In the present invention, it is preferable to carry out an oxidation treatment after the development treatment, physical development or staking treatment. Oxidation treatment allows unnecessary metal components to be ionized and dissolved and removed, and the transmittance of the film can be further increased.
[0083] 酸化処理に用いる処理液としては、例えば Fe (III)イオンを含む水溶液を用いて処 理する方法、あるいは過酸化水素、過硫酸塩、過硼酸塩、過燐酸塩、過炭酸塩、過 ノ、ロゲン酸塩、次亜ハロゲン酸塩、ハロゲン酸塩、有機過酸化物等の過酸化物を含 む水溶液を用いて処理する方法など、従来公知の酸化剤を含有する処理液を用い ることができる。酸化処理は、現像処理終了後から、めっき処理前の間に行われる態 様力 短時間処理で効率的に透過率向上を行うことができるため好ま 、態様であり 、特に好ましくは、物理現像終了後に行う態様である。  [0083] As the treatment liquid used for the oxidation treatment, for example, a treatment method using an aqueous solution containing Fe (III) ions, hydrogen peroxide, persulfate, perborate, perphosphate, percarbonate, Using a treatment solution containing a conventionally known oxidant, such as a method of treatment with an aqueous solution containing peroxide such as peroxygen, rogenate, hypohalite, halogenate, or organic peroxide Can. Oxidation is an aspect that is performed between the end of the development process and before the plating process. This is preferable because the transmittance can be improved efficiently in a short time, and the physical development is particularly preferable. This is a mode to be performed later.
[0084] 〔電磁波遮断層の構成〕  [Configuration of electromagnetic wave shielding layer]
本発明においては、高い透光性と高い電磁波遮断性能を付与するために、格子状 の細線パターンを露光により描画し、次いで現像処理等を行うことで、導電性のメッシ ュパターンを形成することが好ましい。上記導電性金属部の線幅は 20 m以下、線 間隔は 50 /z m以上であることが好ましい。また、導電性金属部は、アース接続等の 目的においては、線幅は 20 mより広い部分を有していてもよい。また画像を目立た せなくする観点からは、導電性金属部の線幅は 18 μ m未満が好ましぐ 15 μ m未満 力 り好ましぐ 14 m未満がさらに好ましぐ 10 m未満がさらにより好ましぐ 7 μ m未満が最も好ましい。 In the present invention, in order to provide high translucency and high electromagnetic wave shielding performance, a conductive mesh pattern can be formed by drawing a lattice-like fine line pattern by exposure and then performing development processing or the like. preferable. The line width of the conductive metal part is 20 m or less. The interval is preferably 50 / zm or more. The conductive metal part may have a part with a line width larger than 20 m for the purpose of ground connection or the like. From the viewpoint of making the image inconspicuous, the line width of the conductive metal part is preferably less than 18 μm, less than 15 μm, more preferably less than 14 m, and even more preferably less than 10 m. The preferred value is less than 7 μm.
[0085] 本発明における導電性金属部は、可視光透過率の点から開口率は 85%以上が好 ましぐ 90%以上がさらに好ましぐ 90%以上が最も好ましい。開口率とは、メッシュを なす細線のない部分が全体に占める割合であり、例えば、線幅 10 /ζ πι、ピッチ 200 μ mの正方形の格子状メッシュの開口率は 90%である。  [0085] The conductive metal part of the present invention has an aperture ratio of preferably 85% or more, more preferably 90% or more, and most preferably 90% or more from the viewpoint of visible light transmittance. The aperture ratio is the ratio of the portion without fine lines forming the mesh to the whole. For example, the aperture ratio of a square lattice mesh with a line width of 10 / ζ πι and a pitch of 200 μm is 90%.
[0086] 本発明においては、支持体を挟んだ両側に各々感光性ハロゲンィ匕銀乳剤層を設 け、それぞれに導電性パターンを形成することも好ましく行われる。この場合、各々の 面に塗設されるハロゲンィ匕銀乳剤は、分光増感などにより、それぞれ異なる波長に感 度を有するような態様が好ましい。表裏面で異なる波長に感度を持たせることにより、 各々の面に異なる導電性パターンを作製することが可能となり、例えば表裏面で各 々異なる周波数の電磁波に対して選択的に遮蔽効果を有するように導電性パターン を形成することも可能となる。  In the present invention, it is also preferable to provide a photosensitive halogen silver halide emulsion layer on both sides of the support and to form a conductive pattern on each. In this case, it is preferable that the halogen silver halide emulsion coated on each surface has a sensitivity at different wavelengths by spectral sensitization. By giving sensitivity to different wavelengths on the front and back surfaces, it becomes possible to create different conductive patterns on each surface, for example, to selectively shield against electromagnetic waves of different frequencies on the front and back surfaces. It is also possible to form a conductive pattern.
[0087] 〔電磁波遮断層以外の機能性層〕  [Functional layer other than electromagnetic wave shielding layer]
本発明の電磁波遮断フィルムを、例えば、プラズマディスプレイパネル(PDP)用の 光学フィルタと組み合わせて使う場合には、ハロゲンィ匕銀粒子層の下に近赤外吸収 染料を含む層である近赤外線吸収層を設けることも好まし 、。場合によっては近赤外 線吸収層を支持体に対して、ハロゲンィ匕銀粒子層のある側の反対側に設けることも できるし、ハロゲンィ匕銀粒子層側と反対側の両方に設けてもよい。ハロゲン化銀を含 むハロゲンィ匕銀粒子層と支持体との間に近赤外線吸収層を設けること、あるいは、ハ ロゲン化銀粒子層からみて支持体の反対側に近赤外線吸収層を設けることができる が、支持体の一方側にすると同時に塗布ができるので前者の方が好ま 、。  When the electromagnetic wave shielding film of the present invention is used in combination with, for example, an optical filter for a plasma display panel (PDP), a near-infrared absorbing layer that is a layer containing a near-infrared absorbing dye under a halogenated silver particle layer. It is also preferable to set up. In some cases, the near-infrared ray absorbing layer may be provided on the opposite side of the support from the side where the halogen silver halide particle layer is present, or may be provided on both the side opposite to the halogen silver halide particle layer side. . A near-infrared absorbing layer may be provided between the silver halide grain layer containing silver halide and the support, or a near-infrared absorbing layer may be provided on the opposite side of the support as viewed from the silver halide grain layer. Yes, the former is preferred because it can be applied to one side of the support at the same time.
[0088] 近赤外線吸収染料の具体例としては、ポリメチン系、フタロシアニン系、ナフタロシ ァニン系、金属錯体系、アミニゥム系、ィモニゥム系、ジィモニゥム系、アンスラキノン 系、ジチオール金属錯体系、ナフトキノン系、インドールフエノール系、ァゾ系、トリア リルメタン系の化合物等が挙げられる。 PDP用光学フィルタで近赤外線吸収能が要 求されるのは、主として熱線吸収や電子機器のノイズ防止である。このためには、最 大吸収波長が 750〜: L lOOnmである近赤外線吸収能を有する色素が好ましぐ金属 錯体系、アミ-ゥム系、フタロシアニン系、ナフタロシアニン系、ジィモ -ゥム系、スクヮ リウム化合物系が特に好ましい。 [0088] Specific examples of near-infrared absorbing dyes include polymethine, phthalocyanine, naphthalocyanine, metal complex, aminium, imonium, dimonium, anthraquinone, dithiol metal complex, naphthoquinone, indole phenol , Azo, tria Examples include rilmethane-based compounds. The PDP optical filter is required to have near-infrared absorptivity mainly for heat ray absorption and prevention of noise in electronic equipment. For this purpose, a metal complex, amidium, phthalocyanine, naphthalocyanine, dim-humic dye that has a maximum absorption wavelength of 750-: L lOOnm is preferred. Particularly preferred is a sulfur compound system.
[0089] 近赤外線吸収染料としては、ジィモ -ゥム化合物は、 IRG— 022、 IRG— 040 (以 上、 日本ィ匕薬株式会社製商品名)、ニッケルジチオール錯体ィ匕合物は、 SIR— 128 、 SIR— 130、 SIR— 132、 SIR— 159、 SIR— 152、 SIR— 162 (以上、三井ィ匕学株 式会社製商品名)、フタロシアニン系化合物は、 IR- 10, IR— 12 (以上、 日本触媒 株式会社商品名)等の市販品を利用することができる。  [0089] As the near-infrared absorbing dye, di-moum compounds are IRG-022, IRG-040 (the trade name of Nippon Gyaku Co., Ltd.), nickel dithiol complex compound is SIR- 128, SIR-130, SIR-132, SIR-159, SIR-152, SIR-162 (above, product names manufactured by Mitsui Chemicals Co., Ltd.), phthalocyanine compounds are IR-10, IR-12 (above Commercial products such as Nippon Shokubai Co., Ltd.) can be used.
[0090] 上記近赤外線吸収染料は、メタノール、エタノール及びイソプロパノール等のアル コール溶剤、アセトン、メチルェチルケトン及びメチルブチルケトン等のケトン溶媒、ジ メチルスルホオキサイド、ジメチルホルムアミド、ジメチルエーテル、トルエン等有機溶 解して使用するか、後述する微粒子化機械で平均粒子径 0. 01〜10 ;ζ ΐηの微粒子 にして塗布することが好ましぐ添加量としては光学濃度が、極大波長で 0. 05〜3. 0濃度の範囲で使用するのが好ましい。  [0090] The near-infrared absorbing dye includes alcohol solvents such as methanol, ethanol and isopropanol, ketone solvents such as acetone, methyl ethyl ketone and methyl butyl ketone, organic solvents such as dimethyl sulfoxide, dimethylformamide, dimethyl ether and toluene. As an addition amount, it is preferable to use the fine particles with an average particle size of 0.01 to 10; ζ ΐη by using a micronizing machine described later, and the optical density is 0.05 to 5 at the maximum wavelength. 3. It is preferable to use in the range of 0 concentration.
[0091] なお、近赤外線吸収能を有する色素を、色調補正層に含有させる場合、上記の色 素のうち 、ずれか 1種類を含有させてもょ 、し、 2種以上を含有させてもょ 、。  [0091] When a colorant having a near-infrared absorbing ability is contained in the color tone correction layer, either one of the above dyes may be contained, or two or more kinds may be contained. Oh ,.
[0092] 本発明の電磁波遮断材料を、例えば、プラズマディスプレイパネル (PDP)用の光 学フィルタと組み合わせて使う場合には PDPに用いられるネオンガスの輝線発光に よる色再現性の低下を防ぐためにこの対策として 595nm付近の光を吸収する色素を 含有する態様が好ましい。このような特定波長を吸収する色素としては、具体的には 例えば、ァゾ系、縮合ァゾ系、フタロシアニン系、アンスラキノン系、インジゴ系、ぺリノ ン系、ペリレン系、ジォキサジン系、キナクリドン系、メチン系、イソインドリノン系、キノ フタロン系、ピロール系、チォインジゴ系、金属錯体系等の周知の有機顔料及び有 機染料、無機顔料が挙げられる。これらの中でも、耐候性が良好であることから、フタ ロシアニン系、アンスラキノン系色素が特に好ましく用いられる。  [0092] When the electromagnetic wave shielding material of the present invention is used in combination with, for example, an optical filter for a plasma display panel (PDP), this is used to prevent a decrease in color reproducibility due to emission of neon gas used in the PDP. As a countermeasure, an embodiment containing a dye that absorbs light at around 595 nm is preferable. Specific examples of dyes that absorb such specific wavelengths include, for example, azo, condensed azo, phthalocyanine, anthraquinone, indigo, perinone, perylene, dioxazine, and quinacridone. Well-known organic pigments such as methine series, isoindolinone series, quinophthalone series, pyrrole series, thioindigo series and metal complex series, organic dyes, and inorganic pigments. Of these, phthalocyanine and anthraquinone dyes are particularly preferably used because of their good weather resistance.
[0093] 本発明の電磁波遮断材料を、ディスプレイ画面の保護等を目的として用いる場合 には、反射防止層を設けることが好ましい。反射防止層としては、金属酸化物、フッ 化物、ケィ化物、ホウ化物、炭化物、窒化物、硫化物等の無機物を、真空蒸着法、ス ノ ッタリング法、イオンプレーティング法、イオンビームアシスト法等で単層あるいは多 層に薄膜積層させる方法、アクリル榭脂、フッ素榭脂等の屈折率の異なる榭脂を単 層あるいは多層に薄膜積層させる方法等を用いることができる。 [0093] When the electromagnetic wave shielding material of the present invention is used for the purpose of protecting a display screen, etc. It is preferable to provide an antireflection layer. As the antireflection layer, metal oxides, fluorides, halides, borides, carbides, nitrides, sulfides, and other inorganic materials such as vacuum deposition, sputtering, ion plating, ion beam assist, etc. A method of laminating thin films in a single layer or multiple layers, a method of laminating thin films of different refractive indexes such as acrylic resin, fluorine resin, etc. into a single layer or multiple layers can be used.
[0094] 本発明にお 、て、前記透明電磁波遮断フィルムにお!/、て、導電性パターンを有す る層に対して該フィルムの支持体を挟んだ反対側に反射防止層を形成する場合に は、まず最初に反射防止層を形成した後に、プロテクトフィルムを貼り合わせ、その後 導電性パターン層を形成する態様が好ましい。導電性パターンを先に形成した後に 反射防止層を形成する場合、反射防止層と支持体の接着性を向上させるために行う プラズマ処理やコロナ処理の効率が低下しやすい傾向にあるため、反射防止層を最 初に形成する態様が好ましい。また、反射防止層を先に形成した場合、該層が現像 及びめつき処理などにより劣化することを防止するという観点から、予めプロテクトフィ ルムを貼り合わせた後、導電性パターン層を形成する態様が好まし ヽ。  [0094] In the present invention, an antireflection layer is formed on the opposite side of the transparent electromagnetic wave shielding film with the support of the film sandwiched between the layer having the conductive pattern! In such a case, it is preferable to form an antireflection layer first, then attach a protective film, and then form a conductive pattern layer. When the antireflection layer is formed after the conductive pattern is formed first, the efficiency of the plasma treatment and corona treatment performed to improve the adhesion between the antireflection layer and the support tends to decrease. An embodiment in which the layer is formed first is preferred. In addition, in the case where the antireflection layer is formed first, from the viewpoint of preventing the layer from being deteriorated by development, sticking processing, etc., an aspect in which the conductive pattern layer is formed after pasting a protective film in advance. Is preferred ヽ.
[0095] 本発明において用いられるプロテクトフィルムは、一般的に巿販されているプロテク トフイルムを用いることができる力 導電性パターン形成のための感光性ハロゲンィ匕 銀乳剤層を塗工しやすくするという観点から、フィルムの厚さは 10 m以上 100 m 以下が好ましぐ特に好ましくは 20 μ m以上 60 μ m以下である。 10 μ m未満の場合 、フィルムの剛性が著しく低下するためプロテクトフィルムの貼合せの作業効率が低 下しやすぐまた 100 mより厚い場合、フィルムの巻き取り時に巻き取り皺などの故 障が発生しやすくなるためである。  [0095] The protective film used in the present invention is capable of using a commercially available protect film. A viewpoint of facilitating coating of a photosensitive silver halide emulsion layer for forming a conductive pattern. Therefore, the thickness of the film is preferably 10 m or more and 100 m or less, particularly preferably 20 μm or more and 60 μm or less. If the thickness is less than 10 μm, the film rigidity will be significantly reduced, so the work efficiency of the protection film will be reduced. If it is thicker than 100 m, troubles such as winding-up will occur when winding the film. It is because it becomes easy to do.
[0096] プロテクトフィルムに用いられる粘着剤の種類には特に制限はないが、反射防止フ イルムを変質させることなぐまた剥離時に反射防止フィルムにダメージを与えな!/、も のが好ましく用いられる。このような観点から、アクリル系、またはシリコーン系の粘着 剤が好ましく用いられる。また、その粘着力としては、 0. 08-0. 6NZ25mmである ものが好ましく用いられる。 [0096] The type of pressure-sensitive adhesive used for the protective film is not particularly limited, but it is preferable to use one that does not alter the antireflection film and does not damage the antireflection film during peeling. From such a viewpoint, an acrylic or silicone adhesive is preferably used. Further, the adhesive strength is preferably 0.008-0.6NZ25mm.
実施例  Example
[0097] 以下、実施例を挙げて本発明を具体的に説明するが、本発明はこれらに限定され ない。なお、実施例において「部」あるいは「%」の表示を用いる力 特に断りがない 限り「質量部」あるいは「質量%」を表す。 [0097] Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited thereto. Absent. In the examples, “part” or “%” is used as a force to indicate “part by mass” or “% by mass” unless otherwise specified.
[0098] 実施例 1  [0098] Example 1
(EMP— 1の調製)  (Preparation of EMP-1)
35°Cに保温した 0. 5%ゼラチン水溶液 1リットル中に下記 (A1液)及び (B1液)を 銀電位 (EAg) =85mV、 pH = 5. 8に制御しつつ同時添カ卩し、さらに下記(C1液) 及び(D1液)を EAg = 85mV、 pH = 5. 8に制御しつつ同時添カ卩した。この時、銀電 位の制御は 10%臭化カリウム水溶液を用い、 pHの制御は酢酸または水酸ィ匕ナトリウ ム水溶液を用いて行った。  In 1 liter of 0.5% gelatin aqueous solution kept at 35 ° C, add the following (A1 solution) and (B1 solution) at the same time while controlling the silver potential (EAg) = 85mV and pH = 5.8, Further, the following (C1 solution) and (D1 solution) were simultaneously added while controlling EAg = 85 mV and pH = 5.8. At this time, the silver potential was controlled using a 10% potassium bromide aqueous solution, and the pH was controlled using acetic acid or a sodium hydroxide aqueous solution.
[0099] (Aim)  [0099] (Aim)
臭化カリウム 104g  Potassium bromide 104g
沃化カリウム 3. Og  Potassium iodide 3. Og
水を加えて 1300ml  1300ml with water
(B1液)  (B1 solution)
硝酸銀 150g  Silver nitrate 150g
水を加えて 1360ml  1360ml with water
(C1液)  (C1 liquid)
臭化カリウム 310g  Potassium bromide 310g
へキサクロ口イリジウム(IV)酸カリウム 4 X 10— 8モノレ To Kisakuro port iridium (IV) potassium 4 X 10- 8 Monore
へキサシァノ鉄 (II)酸カリウム 2 X 10— 5モル To Kisashiano iron (II) potassium 2 X 10- 5 moles
沃化カリウム 10g  Potassium iodide 10g
水を加えて 4000ml  4000ml with water
(D1液)  (D1 solution)
硝酸銀 480g  Silver nitrate 480g
水を加えて 4200ml  4200ml with water
添カ卩終了後、花王アトラス社製デモール Nの 5%水溶液と硫酸マグネシウムの 20% 水溶液を用いて脱塩を行った後、ゼラチン水溶液と混合して平均粒径 0. 04 m、 粒径分布の変動係数 0. 13のハロゲン化銀乳剤 EMP— 1を得た。 [0100] (EMP— 2〜EMP— 3の調製) After the soaking process, desalting was performed using a 5% aqueous solution of Demol N made by Kao Atlas and a 20% aqueous solution of magnesium sulfate, and then mixed with an aqueous gelatin solution to obtain an average particle size of 0.04 m and particle size distribution. A silver halide emulsion EMP-1 having a coefficient of variation of 0.13 was obtained. [0100] (Preparation of EMP-2 to EMP-3)
EMP— 1の調製において、(A1液)と(B1液)の添加及び(C1液)と(D1液)の添 加時の温度を 40°Cとした以外は同様にして平均粒径 0. 07 ^ m,粒径分布の変動 係数 0. 14のハロゲンィ匕銀乳剤 EMP— 2を、また添加速度を遅くすることにより、平 均粒径 0. 12 m、粒径分布の変動係数 0. 13のハロゲン化銀乳剤 EMP— 3得た。  In the preparation of EMP-1, the average particle size was set to 0, except that (A1 solution) and (B1 solution) were added and (C1 solution) and (D1 solution) were added at a temperature of 40 ° C. 07 ^ m, Halogenous silver emulsion EMP-2 with a coefficient of variation of 0.14, and an average particle size of 0.12 m, a coefficient of variation of the particle size distribution of 0.13. Of silver halide emulsion EMP-3 was obtained.
[0101] (EM— 1の調製)  [0101] (Preparation of EM— 1)
上記 EMP—1に対し、チォ硫酸ナトリウムをハロゲン化銀 1モル当たり 2. Omg用い 40°Cにて 80分間化学増感を行い、化学増感終了後に 4ーヒドロキシー 6—メチルー 1, 3, 3a, 7—テトラザインデン (TAI)をハロゲン化銀 1モル当たり 500mg添カ卩して、 ハロゲンィ匕銀乳剤 EM— 1を得た。  EMP-1 is chemically sensitized with 2. Omg of sodium thiosulfate per mol of silver halide at 40 ° C for 80 minutes, and after completion of chemical sensitization, 4-hydroxy-6-methyl-1, 3, 3a, 7-tetrazaindene (TAI) was added in an amount of 500 mg per mole of silver halide to obtain a silver halide silver emulsion EM-1.
[0102] (EM— 2〜EM— 3の調製)  [0102] (Preparation of EM-2 to EM-3)
EM- 1の調製にお!、て、ハロゲン化銀乳剤を EMP— 1から EMP— 2及び EMP —3に変更し、チォ硫酸ナトリウム及び TAIの添カ卩量を、ハロゲン化銀粒子の総表面 積に比例させて調整した以外は同様にして、それぞれハロゲンィ匕銀乳剤 EM— 2及 び EM— 3を得た。  For the preparation of EM-1, the silver halide emulsion was changed from EMP-1 to EMP-2 and EMP-3, and the amount of sodium thiosulfate and TAI added was adjusted to the total surface of the silver halide grains. Similarly, except for adjusting in proportion to the product, Halogenous silver emulsions EM-2 and EM-3 were obtained, respectively.
[0103] (感光材料 101〜117の作製)  [0103] (Production of photosensitive materials 101 to 117)
下引層を施した厚さ 180 μ mのポリエチレンテレフタレートフィルム支持体上に、前 述のように調製したハロゲン化銀乳剤 EM— 1〜EM— 3を、表 1に示すような銀量、 及びゼラチン量となるように、塗布を行った後、乾燥して、感光材料 101〜117を作 製した。なお、各々の感光材料の作製においては、硬膜剤 (H—1 :テトラキス (ビュル スルホ -ルメチル)メタン)をゼラチン lg当たり 50mgの比率となるようにして添カロした 。また塗布助剤として、界面活性剤 (SU- 2 :スルホ琥珀酸ジ(2—ェチルへキシル) •ナトリウム)を添加し、表面張力を調整した。なお、表 1において、銀量は用いたハロ ゲンィ匕銀乳剤の量を等モルの銀に換算した値で示した。  On a 180 μm-thick polyethylene terephthalate film support with an undercoat layer, the silver halide emulsions EM-1 to EM-3 prepared as described above were prepared as shown in Table 1. Coating was performed so that the amount of gelatin was the same, and then drying was performed to produce photosensitive materials 101 to 117. In the preparation of each light-sensitive material, a hardener (H-1: tetrakis (bulusulfol-methyl) methane) was added at a ratio of 50 mg per lg of gelatin. As a coating aid, a surfactant (SU-2: di (2-ethylhexyl sulfosuccinate) • sodium) was added to adjust the surface tension. In Table 1, the amount of silver is shown as a value obtained by converting the amount of the halogeno silver emulsion used to equimolar silver.
[0104] [表 1] ハロゲン化銀 [0104] [Table 1] Silver halide
セフ ノ δ  Cefno δ
感光材料 銀量 ζ粒径 備 考  Photosensitive material Silver amount ζ grain size Remarks
種類 (9/η )  Type (9 / η)
101 EM- 1 0.03 0.007 0.75 比較例  101 EM- 1 0.03 0.007 0.75 Comparative example
102 EM- 1 0.07 0.015 1.8 本発明  102 EM- 1 0.07 0.015 1.8 The present invention
103 EM— 1 0.2 0.043 5.0 本発明  103 EM— 1 0.2 0.043 5.0 The present invention
104 EM— 1 0.5 0.108 13 本発明  104 EM— 1 0.5 0.108 13 The present invention
105 EM- 1 0.7 0.152 18 本発明  105 EM- 1 0.7 0.152 18 The present invention
106 EM- 1 0.9 0.195 23 本発明  106 EM- 1 0.9 0.195 23 The present invention
107 EM- 1 1.2 0.260 30 比較例  107 EM- 1 1.2 0.260 30 Comparative example
108 EM- 1 0.5 0.070 13 本発明  108 EM- 1 0.5 0.070 13 The present invention
109 EM- 1 0.5 0.100 13 本発明  109 EM- 1 0.5 0.100 13 The present invention
no EM- 1 0.5 0,150 13 本発明  no EM- 1 0.5 0,150 13 The present invention
111 EM— 1 0.5 0.18 3 本発明  111 EM— 1 0.5 0.18 3 The present invention
112 EM- 2 0.03 0.10 0.43 比較例  112 EM-2 0.03 0.10 0.43 Comparative example
113 EM— 2 0.5 0.10 7,1 本発明  113 EM— 2 0.5 0.10 7,1 Present invention
!H EM- 2 1 ,2 0.10 17 比較例  ! H EM- 2 1, 2 0.10 17 Comparative example
115 EM— 3 0.03 0.10 0.25 比較例  115 EM— 3 0.03 0.10 0.25 Comparative example
Π6 EM- 3 0.5 0.10 4.2 本発明  Π6 EM-3 0.5 0.10 4.2 The present invention
Π7 EM— 3 1.2 0.10 10 比較例  Π7 EM— 3 1.2 0.10 10 Comparative example
[0105] (透明電磁波遮断フィルム S101〜S117の作製) [0105] (Preparation of transparent electromagnetic wave shielding films S101 to S117)
上述のようにして製造した感光材料 101〜117に対して、ライン幅が 10/ζπι、ライン 同士の間隔が 240 mの格子状のフォトマスクを介して、紫外線ランプを用いて露光 を行った後、下記現像液 (DEV- 1)を用いて 25°Cで 60秒間現像処理を行った後、 下記定着液 (FIX— 1)を用いて 25°Cで 120秒間の定着処理を行 、、っ 、で水洗処 理を行った。さら〖こ、下記物理現像液 (PD— 1)を用いて、 25°C300秒間の物理現像 を行い、ついで水洗処理を行った。その後、 25°Cの Pd触媒液 (CAT— 1)に 30秒間 浸漬したのち、水洗処理し、さらにめつき液 (PL— 1)を用いて 45°Cで無電解銅めつ き処理を 600秒間行い、透明電磁波遮断フィルム S101〜S117を作製した。  After the photosensitive materials 101 to 117 manufactured as described above are exposed using an ultraviolet lamp through a grid-like photomask having a line width of 10 / ζπι and a distance between lines of 240 m. After developing for 60 seconds at 25 ° C using the following developer (DEV-1), fix for 120 seconds at 25 ° C using the following fixer (FIX-1). , And then washed with water. Furthermore, using the following physical developer (PD-1), physical development was performed at 25 ° C for 300 seconds, followed by washing with water. Then, after immersing in a Pd catalyst solution (CAT-1) at 25 ° C for 30 seconds, it is washed with water and further treated with electroless copper plating at 45 ° C using a plating solution (PL-1). Second, transparent electromagnetic wave shielding films S101 to S117 were produced.
[0106] (DEV—1:現像液) [0106] (DEV—1: Developer)
純水 500ml  500ml of pure water
メトール 2g  Metol 2g
無水亜硫酸ナトリウム 80g  Anhydrous sodium sulfite 80g
ハイドロキノン 4g ホウ砂 4g チォ硫酸ナトリウム 10g 臭化カリウム 0. 5g 水を加えて全量を 1リットルとする Hydroquinone 4g Borax 4g Sodium thiosulfate 10g Potassium bromide 0.5g Add water to make 1 liter
(FIX - 1 :定着液)  (FIX-1: Fixer)
純水 750ml チォ硫酸ナトリウム 250g 無水亜硫酸ナトリウム 15g 氷酢酸 15ml カリミヨウバン 15g 水を加えて全量を 1リットルとする  Pure water 750ml Sodium thiosulfate 250g Anhydrous sodium sulfite 15g Glacial acetic acid 15ml Potassium bromide 15g Add water to bring the total volume to 1 liter
(PD— 1 :物理現像液)  (PD-1: Physical developer)
純水 800ml クェン酸 5g ハイドロキノン 7g 硝酸銀 3g 水を加えて全量を 1リットルとする。  Pure water 800ml Quenic acid 5g Hydroquinone 7g Silver nitrate 3g Add water to make 1 liter.
(CAT - l : Pd触媒液)  (CAT-l: Pd catalyst solution)
硫酸パラジウム 20mg 水を加えて全量を 1リットルとする。  Add 20 mg of palladium sulfate to make a total volume of 1 liter.
[0107] (PL— 1 :めっき液) [0107] (PL-1: Plating solution)
硫酸銅 0. 04モノレ ホルムアルデヒド(37%) 0. 08モル 水酸化ナトリウム 0. 10モル 卜ジエタノールァ 0. 05モル ポリエチレングリコール lOOppm 水を加えて全量を 1リットルとする。  Copper sulfate 0.04 Monoform formaldehyde (37%) 0.08 mol Sodium hydroxide 0.10 mol 卜 Diethanola 0.05 mol Polyethylene glycol lOOppm Add water to bring the total volume to 1 liter.
[0108] (透明電磁波遮断フィルム S101〜S117の評価) このようにして得られた、導電性の金属メッシュ部分を有する透明電磁波遮断フィル ム S101〜S117の各々に対して、表面比抵抗値と透過率を、それぞれ抵抗率計 (口 レスタ GP (MCP—T610型): (株)ダイヤインスツルメンッ社製)と分光光度計(日立 分光光度計 U— 3210 : (株)日立製作所製)を用いて測定した。また、透明電磁波遮 断フィルム S101〜S117に対して、 60°C90%RHの恒温恒湿機中に 24時間放置と 、 80°C20%RHの恒温恒湿機中への 24時間放置、さらに 10°C50%RHの恒温恒 湿機中への 24時間放置を 1サイクルとする強制劣化試験を、 15サイクル繰り返す強 制劣化試験を実施し、強制劣化前の透過率に対する強制劣化後の透過率の比率を 求めた。また、保存後の被膜の状態を目視観察し、下記基準に則り「保存後のクラッ クの発生」を評価し、被膜脆弱性の尺度とした。 [0108] (Evaluation of transparent electromagnetic wave shielding films S101 to S117) For each of the transparent electromagnetic wave shielding films S101 to S117 having a conductive metal mesh portion obtained in this way, the surface specific resistance value and the transmittance were respectively measured with a resistivity meter (mouth rester GP (MCP— T610 type): Measured using Dia Instruments Ltd. and a spectrophotometer (Hitachi spectrophotometer U-3210: manufactured by Hitachi, Ltd.). For transparent electromagnetic wave shielding films S101 to S117, left in a constant temperature and humidity chamber at 60 ° C 90% RH for 24 hours, left in a constant temperature and humidity chamber at 80 ° C 20% RH, and further 10 A forced deterioration test with 15 cycles of standing in a constant temperature and humidity chamber at 50 ° C at 50 ° C is conducted for 15 cycles, and the transmittance after forced deterioration is compared to the transmittance before forced deterioration. The ratio was calculated. In addition, the state of the film after storage was visually observed, and “generation of cracks after storage” was evaluated according to the following criteria, and used as a measure of film vulnerability.
[0109] 〇:フィルムを丸めても、クラックの発生は認められない、  [0109] ○: Even when the film is rolled, no cracks are observed.
△:平面に置いた状態ではクラックは認められないが、フィルムを丸めるとクラ ックの発生が認められる、  Δ: No cracks are observed when placed on a flat surface, but cracks are observed when the film is rolled.
X:平面に置いた状態で被膜にクラックの発生が認められる。  X: Generation of cracks in the film is observed when placed on a flat surface.
[0110] また、各試料の断裁時にフィルムのエッジ部分からの被膜剥がれが生じるかどうか について、各水準 10枚のフィルムを観察して、被膜剥がれ部分の個数を数えた。結 果を合わせて表 2に示す。  [0110] Regarding whether or not film peeling occurred from the edge portion of the film during cutting of each sample, 10 films of each level were observed, and the number of film peeling portions was counted. The results are shown in Table 2.
[0111] [表 2] [0111] [Table 2]
電磁波 透過率表!]比抵 ΪΛ強制劣化試験後の評価 断裁時の Electromagnetic wave transmittance table!] Specific resistance ΪΛ Evaluation after forced degradation test
'  '
遮断フィルム ( % ) ( Ω/Π) 透過率変化被膜脆弱性被膜剥がれ個数  Barrier film (%) (Ω / Π) Permeability change film
S 101 81 8.5 95 〇 0 比較例 S 101 81 8.5 95 〇 0 Comparative example
S 102 81 0.45 95 〇 0 本発明S 102 81 0.45 95 ○ 0 Present invention
S 103 81 0.35 93 o 0 本発明S 103 81 0.35 93 o 0 The present invention
S S 04 81 0.25 90 o 0 本発明S S 04 81 0.25 90 o 0 The present invention
S 105 81 0. 15 86 〇 0 本発明S 105 81 0. 15 86 〇 0 Present invention
S 106 80 0. 12 83 〇 1 本発明S 106 80 0. 12 83 ○ 1 Present invention
S 107 77 0.09 73 X 8 比較例S 107 77 0.09 73 X 8 Comparative example
S 108 81 0.35 92 Δ 0 本発明S 108 81 0.35 92 Δ 0 The present invention
S 109 81 0.4 90 Δ 0 本発明S 109 81 0.4 90 Δ 0 The present invention
S 1 10 80 0.5 87 O 0 本発明S 1 10 80 0.5 87 O 0 The present invention
S 1 1 1 80 0.55 82 〇 0 本発明S 1 1 1 80 0.55 82 ○ 0 Present invention
S 1 1 2 81 1 1 90 o 0 比較例S 1 1 2 81 1 1 90 o 0 Comparative example
S 1 1 3 81 0.85 89 Δ 0 本発明S 1 1 3 81 0.85 89 Δ 0 The present invention
S 1 14 77 0.6 88 X 0 比較例S 1 14 77 0.6 88 X 0 Comparative example
S 1 1 5 81 15 91 O 0 比較例S 1 1 5 81 15 91 O 0 Comparative example
S 1 16 81 0.9 90 Δ 0 本発明S 1 16 81 0.9 90 Δ 0 The present invention
S 1 17 77 0 .65 89 X 0 比較例 S 1 17 77 0 .65 89 X 0 Comparative example
[0112] 表 2の結果より本発明の要件を満たす透明電磁波遮断フィルム S102〜S 106、 SI 08〜S111、 S113及び S116は、高い透過率と低い表面比抵抗を有し、さらに強制 劣化試験後の透過率変化が小さぐ被膜脆弱性の劣化度が小さいという本発明の効 果が得られることがわ力る。中でも、塗布銀量 (gZm2)を粒径 ( μ m)で除した値が 6 以上 25以下の範囲【こある透明電磁波遮断フイノレム S104〜S106、 S108〜S111、 及び S113は、同じ感光性ハロゲンィ匕銀乳剤を用いた他の透明電磁波遮断フィルム と比較して、断裁時のエッジ部分力 の被膜はがれが殆どなぐかつ低い表面比抵 抗を有し、本発明の好ましい態様であることがわかる。 [0112] From the results of Table 2, the transparent electromagnetic wave shielding films S102 to S106, SI 08 to S111, S113 and S116 satisfying the requirements of the present invention have high transmittance and low surface resistivity, and after forced degradation test It is obvious that the effect of the present invention can be obtained that the degree of deterioration of the film brittleness is small when the transmittance change of the film is small. In particular, the value obtained by dividing the coating silver amount (gZm 2 ) by the particle size (μm) is in the range of 6 to 25 [this transparent electromagnetic wave shielding Finolem S104 to S106, S108 to S111, and S113 are the same photosensitive halogen compounds. Compared with other transparent electromagnetic wave shielding films using a silver halide emulsion, the coating of the edge partial force at the time of cutting has almost no peeling and a low surface specific resistance, indicating that this is a preferred embodiment of the present invention.
[0113] 実施例 2 [0113] Example 2
実施例 1で作製した透明電磁波遮断フィルム S101、 S105及び S107において、 P d触媒液 (CAT- 1)への浸漬時間、およびめつき液 (PL— 1)への浸漬時間を表 3に 示すように変更した以外は同様にして、透明電磁波遮断フィルム S201〜S209を作 製した。  Table 3 shows the immersion time in the Pd catalyst solution (CAT-1) and the immersion solution (PL-1) in the transparent electromagnetic wave shielding films S101, S105, and S107 produced in Example 1. Transparent electromagnetic wave shielding films S201 to S209 were produced in the same manner except for changing to.
[0114] なお、透明電磁波遮断フィルム S201〜S209の作製にあたっては、(DEV—1)、 ( FIX- 1)および水洗が終了した段階で、ハロゲン化銀の現像終了後の現像銀量を 蛍光 X線分析にて定量し、その後(PD— 1)、(CAT— 1)及び (PL— 1)の処理が終 了した段階で、再度蛍光 X線分析を行い、物理現像銀量及び銅めつき量を定量した 。このようにして求めた金属量を用いて、物理現像または金属めつきにより付与された 金属量の、感光材料を露光現像処理することにより得られた現像銀量に対する比率 を質量比として求めた。 [0114] In the production of the transparent electromagnetic wave shielding films S201 to S209, the amount of developed silver after the development of silver halide was completed at the stage when (DEV-1), (FIX-1) and water washing were completed. Quantitatively by X-ray fluorescence analysis, and after the processing of (PD-1), (CAT-1) and (PL-1) is completed, X-ray fluorescence analysis is performed again, and the amount of physical developed silver and copper The amount of adhesion was quantified. Using the amount of metal thus determined, the ratio of the amount of metal imparted by physical development or metal plating to the amount of developed silver obtained by exposing and developing the photosensitive material was determined as a mass ratio.
[0115] このようにして作製した透明電磁波遮断フィルム S201〜S209に対して、実施例 1 と同様の評価を実施した。結果を合わせて表 3に示す。  [0115] The transparent electromagnetic wave shielding films S201 to S209 thus produced were evaluated in the same manner as in Example 1. The results are shown in Table 3.
[0116] [表 3] [0116] [Table 3]
Figure imgf000029_0001
Figure imgf000029_0001
[0117] 表 3の結果より、物理現像及び金属めつきにより付与された金属量が、感光材料を 露光、現像処理することにより得られた現像銀に対して、質量換算で 10倍未満であ る透明電磁波遮断フィルム S201は、高 、透過率と低!/、表面比抵抗を得られて 、るも のの、質量換算で 10倍以上である他の本発明に係る透明電磁波遮断フィルムに比 ベて、表面比抵抗がやや高い結果となった。また、物理現像及び金属めつきにより付 与された金属量が、感光材料を露光、現像処理することにより得られた現像銀に対し て、質量換算で 100倍より大きい透明電磁波遮断フィルム S205は、高い透過率と低 V、表面比抵抗を得られて 、るものの、質量換算で 100倍より小さ 、他の本発明に係 る透明電磁波遮断フィルムに比べて、透過率がやや低い結果となった。本発明の要 件を満たし、かつ物理現像及び金属めつきにより付与された金属量が、感光材料を 露光、現像処理することにより得られた現像銀に対して、質量換算で 10倍以上 100 倍以下である透明電磁波遮断フィルム S105、及び S202〜S204は、特に高い透過 率と低 、表面比抵抗を有し、本発明の好ま 、態様であることがわかる。 [0117] From the results in Table 3, the amount of metal imparted by physical development and metal plating is less than 10 times in terms of mass with respect to developed silver obtained by exposing and developing the photosensitive material. The transparent electromagnetic wave shielding film S201 has high transmittance and low! / Surface specific resistance, but is 10 times or more in terms of mass, compared with other transparent electromagnetic wave shielding films according to the present invention. As a result, the surface resistivity was slightly high. In addition, the transparent electromagnetic wave shielding film S205 in which the amount of metal applied by physical development and metal plating is 100 times greater than the developed silver obtained by exposing and developing the photosensitive material in terms of mass is: Although high transmittance, low V, and surface specific resistance were obtained, it was less than 100 times in terms of mass, resulting in slightly lower transmittance than other transparent electromagnetic wave shielding films according to the present invention. . The amount of the metal that satisfies the requirements of the present invention and is imparted by physical development and metal plating is used for the photosensitive material. The transparent electromagnetic wave shielding films S105 and S202 to S204, which are 10 times to 100 times in terms of mass with respect to developed silver obtained by exposure and development processing, have particularly high transmittance and low surface resistivity. It can be seen that this is a preferred embodiment of the present invention.
なお、本発明の構成要件を満たさない感光材料 107を用いて作製した電磁波遮断 フィルム S208及び S209は S107同様に、強制劣化試験後の被膜にクラックの発生 が認められ、脆弱性が劣っていた。  In addition, the electromagnetic wave shielding films S208 and S209 produced using the photosensitive material 107 that does not satisfy the constituent requirements of the present invention, like S107, were found to have cracks in the coating after the forced deterioration test and were inferior in brittleness.
[0118] 実施例 3 [0118] Example 3
実施例 1で作製した透明電磁波遮断フィルム S 106及び S 110の作製において、物 理現像処理と Pd触媒処理の間に、下記酸ィ匕処理液 (OX—1)を用いて、 45°C120 秒間の酸ィ匕処理を行った以外は同様にして透明電磁波遮断フィルム S301及び S3 02を作製した。また、 S106, S107, S301及び S302の作製【こお!ヽて、めっき液(P L- 1)での処理終了後に、下記黒ィ匕処理液 (BP— 1)を用いて 80°C120秒間の黒 化処理を行った以外は同様にして、透明電磁波遮断フィルム S303〜S306を作製 した。このようにして得られた透明電磁波遮断フィルム S301〜S306に対して、実施 例 1と同様の評価を実施した。また、透明電磁波遮断フィルムの導電性パターンを形 成した側を下にして、黒色紙の上に置き、反対面力 フィルムを観察し、金属光沢反 射が見られるかどうかを確認した。結果を合わせて表 4に示す。  In the production of the transparent electromagnetic wave shielding films S 106 and S 110 prepared in Example 1, the following acid solution (OX-1) was used for 45 seconds at 45 ° C for 120 seconds between physical development and Pd catalyst treatment. Transparent electromagnetic wave shielding films S301 and S302 were prepared in the same manner except that the acid-soaking treatment was performed. In addition, S106, S107, S301 and S302 were prepared. After finishing the treatment with the plating solution (P L-1), use the following black solution (BP-1) at 80 ° C for 120 seconds. Transparent electromagnetic wave shielding films S303 to S306 were produced in the same manner except that the blackening treatment was performed. Evaluation similar to Example 1 was implemented with respect to the transparent electromagnetic wave shielding films S301-S306 obtained in this way. In addition, the transparent electromagnetic wave shielding film with the conductive pattern side down was placed on black paper and the opposite surface force film was observed to confirm whether metallic gloss reflection was observed. The results are shown in Table 4.
[0119] (OX— 1 :酸化処理液) [0119] (OX-1: oxidation solution)
フェリシアンィ匕カリウム 0. lg  Ferricyan 匕 potassium 0.lg
水を加えて全量を 1リットルとする。  Add water to bring the total volume to 1 liter.
[0120] (BP— 1 :黒ィ匕処理液) [0120] (BP—1: Black 匕 treatment solution)
亜塩素酸ナトリウム水溶液(76%) 40g  Sodium chlorite aqueous solution (76%) 40g
水酸化ナトリウム 5g  Sodium hydroxide 5g
水を加えて全量を 1リットルとする。  Add water to bring the total volume to 1 liter.
[0121] [表 4] 観察時強価比透率化後評表過黒化処理理面のの [0121] [Table 4] After the observation of the strong relative permeability,
(ノル沢ム 1Ω0X 1BPイ率変被性透fl膜脆弱化過- (Nor Sawam 1Ω0X 1BP rate-variable permeability permeable fl membrane weakening
_) や _) And
〇 〇  〇 〇
 Light
Figure imgf000031_0001
表 4の結果より、酸化処理を施した透明電磁波遮断フィルム S301、 S302、 S305 および S306は、特に高い透過率を得ることができ、本発明の好ましい態様であること がわかる。また黒ィ匕処理を施した透明電磁波遮断フィルム 303〜S306は、高い透過 率と低 、表面比抵抗の両立が可能なのみにとどまらず、導電性パターンの金属反射 光沢が目立たないため、フィルム観察時に視認性を低くおさえることができ、高品位 な透明電磁波遮断フィルムとして、特に好まし 、態様であることがわかる。
Figure imgf000031_0001
From the results in Table 4, it can be seen that the transparent electromagnetic wave shielding films S301, S302, S305 and S306 subjected to the oxidation treatment can obtain particularly high transmittance and are preferable embodiments of the present invention. In addition, the transparent electromagnetic wave shielding films 303 to S306 treated with black glazing are not only capable of achieving both high transmittance and low surface resistivity, but also the metal reflection gloss of the conductive pattern is inconspicuous. Sometimes the visibility is low and high quality It can be seen that the transparent electromagnetic wave shielding film is particularly preferable.
[0123] 実施例 4 [0123] Example 4
感光性ハロゲン化銀乳剤 EM— 1G、 EM— 1Rの作製  Preparation of photosensitive silver halide emulsions EM-1G and EM-1R
実施例 1で作製した感光性ハロゲンィ匕銀乳剤 EM— 1の作製において、化学増感 終了後、 TAIを添加する前に、増感色素 SD—1、または SD— 2を各々ハロゲンィ匕銀 1モルあたり 3 X 10— 4モルとなるように添カ卩した以外は同様にして、緑感光性ハロゲン 化銀乳剤 EM— 1G、および赤感光性ハロゲンィ匕銀乳剤 EM— 1Rを作製した。 In the preparation of the light-sensitive halogenated silver emulsion EM-1 prepared in Example 1, sensitizing dye SD-1 or SD-2 was added to each mole of silver halide 1 mol after completion of chemical sensitization and before adding TAI. except for using添Ka卩so that per 3 X 10- 4 mole in the same manner, green-sensitive silver halide emulsion EM-1G, and the red-sensitive Harogeni匕銀emulsion EM-1R manufactured.
[0124] [化 1] [0124] [Chemical 1]
Figure imgf000032_0001
Figure imgf000032_0001
[0125] 感光材料 401の作製 [0125] Production of photosensitive material 401
実施例 1で作製した感光材料 105の作製において、感光性ハロゲンィ匕銀乳剤を E M— 1から EM— 1Gに変更した以外は同様にして塗布を行った。乾燥後、この感光 材料の裏面に、感光性ハロゲンィ匕銀乳剤を EM— 1G力も EM— 1Rに変更した以外 は同様にして調製した塗布液を用いて、塗布を行い、表裏で各々異なる分光感度を 有する両面感光材料 401を作製した。  Coating was performed in the same manner as in the preparation of the photosensitive material 105 prepared in Example 1, except that the photosensitive halogenated silver halide emulsion was changed from EM-1 to EM-1G. After drying, the photosensitive material is coated on the back side of the photosensitive material using the same coating solution except that the photosensitive halogen silver emulsion is changed to EM-1G for EM-1G. Double-sided photosensitive material 401 having
[0126] このようにして作製した感光材料 401において、 Green及び Redのレーザー光によ り表裏面に、ライン幅とライン間隔が異なる別々のノターン露光を行った後、現像、物 理現像、めっき処理を実施し、表裏面で異なる導電性パターンを形成した透明電磁 波遮断フィルム S401を作製した。  [0126] In the photosensitive material 401 produced in this manner, green and red laser beams were subjected to separate no-turn exposure on the front and back surfaces with different line widths and line intervals, followed by development, physical development, and plating. A transparent electromagnetic wave shielding film S401 in which different conductive patterns were formed on the front and back surfaces was prepared.
[0127] このように、分光増感されたハロゲンィ匕銀乳剤を用いて、支持体の表裏面に各々異 なる感色性を有する感光性ハロゲン化銀乳剤を含有してなる層を塗設することにより 、表面と裏面で異なる電磁波シールドパターンを作製することで、異なった性質を持 つ電磁波遮断層を 1枚のフィルム上に複数設けることが可能となり、本発明の好まし い態様であることがわかる。 [0127] In this way, using the spectrally sensitized halogen silver halide emulsion, the front and back surfaces of the support were each different. By forming a layer containing a photosensitive silver halide emulsion having a color sensitivity, an electromagnetic wave shielding layer having different properties can be obtained by preparing different electromagnetic wave shielding patterns on the front and back surfaces. A plurality of films can be provided on a sheet of film, which is a preferable aspect of the present invention.
[0128] 実施例 5  [0128] Example 5
実施例 1で作製した感光材料 105の作製において、紫外線吸収剤 (UV- 1)の 1 質量部をポリビニルァセタール (エスレック BM— S:積水化学工業 (株)製) 20質量部 と共に酢酸ェチル Zメチルェチルケトン混合溶媒 (混合比 2 : 1)に溶解した後、 UV — 1が 0. 2g/m2となるように塗設したポリエチレンテレフタレート支持体を用いた以 外は同様にして感光材料 501を作製し、透明電磁波遮断フィルム S105と同様の方 法を用いて、透明電磁波遮断フィルム S501を作製した。 In the preparation of the photosensitive material 105 prepared in Example 1, 1 part by mass of the UV absorber (UV-1) was mixed with 20 parts by mass of polyvinyl acetal (Esreck BM-S: Sekisui Chemical Co., Ltd.) and ethyl acetate Z Photosensitive material was the same except that a polyethylene terephthalate support coated with UV — 1 at 0.2 g / m 2 after being dissolved in a methyl ethyl ketone mixed solvent (mixing ratio 2: 1) was used. 501 was produced, and transparent electromagnetic wave shielding film S501 was produced using the same method as transparent electromagnetic wave shielding film S105.
[0129] [化 2] [0129] [Chemical 2]
UV-1
Figure imgf000033_0001
UV-1
Figure imgf000033_0001
[0130] このようにして得られた透明電磁波遮断フィルム S501に対して、実施例 1と同様の 評価を実施した。また、 Xeフェードメーターを用いて、 24°C60%RHの環境下、 7万 1 Xで 24時間光照射行 、、強制劣化前の透過率に対する強制劣化後の透過率の比 率を求め、また実施例 1と同様の「保存後のクラックの発生」を評価し、耐久性の尺度 とした。 [0130] The same evaluation as in Example 1 was performed on the transparent electromagnetic wave shielding film S501 thus obtained. In addition, using a Xe fade meter, light was irradiated for 24 hours at 71 X in an environment of 24 ° C 60% RH, and the ratio of the transmittance after forced deterioration to the transmittance before forced deterioration was obtained. Similar to Example 1, “generation of cracks after storage” was evaluated and used as a measure of durability.
[0131] 結果を合わせて表 5に示す。  [0131] The results are shown in Table 5.
[0132] [表 5]
Figure imgf000034_0001
[0132] [Table 5]
Figure imgf000034_0001
[0133] 表 5の結果より、少なくとも 1層の紫外線吸収層を有している透明電磁波遮断フィル ム S501は、光照射に対する被膜の耐久性も向上しており、本発明の特に好ましい態 様であることがわかる。 [0133] From the results shown in Table 5, the transparent electromagnetic wave shielding film S501 having at least one ultraviolet absorbing layer has improved durability of the coating film against light irradiation, and is a particularly preferred embodiment of the present invention. I know that there is.
[0134] 実施例 6  [0134] Example 6
反射防止フィルム (AR— 1)の作製  Preparation of antireflection film (AR— 1)
特開 2005— 338550号公報の実施例 1に記載の反射防止フィルム No. 14の作製 にお 、て、支持体をセルロースエステルフィルムからポリエチレンテレフタレートフィル ム(厚さ 180 m)に変更し、バックコート層を特開平 10— 039448号公報の実施例 1に記載の <A—1 >、 <A—2>液を用い、支持体に近い側に <A—1 >液を用い て乾燥膜厚 0. 8 mの層を設け、最外層にく A— 2 >液を用いて乾燥膜厚 0. 1 m の層を設けるように塗設した以外は同様にして、反射防止フィルム AR— 1を作製した Preparation of antireflection film No. 14 described in Example 1 of JP-A-2005-338550 In this case, the support was changed from a cellulose ester film to a polyethylene terephthalate film (thickness 180 m), and the backcoat layer was <A-1> described in Example 1 of JP-A-10-039448, Using the <A-2> solution, a layer with a dry film thickness of 0.8 m is provided using the <A-1> solution on the side close to the support, and the dry film using the A-2> solution is provided on the outermost layer. An antireflection film AR-1 was prepared in the same manner except that a 0.1 m thick layer was applied.
[0135] 透明電磁波遮断フィルム S601〜S603の作製 [0135] Preparation of transparent electromagnetic wave shielding films S601 to S603
このように作製した反射防止フィルム AR— 1の反射防止加工面側に、表 6に示すよ うなプロテクトフィルムを貼り合わせた後、裏面側に実施例 1の透明電磁波遮断フィル ム S105の作製と同様の加工を行い、透明電磁波遮断フィルム S601〜S603を作製 した。  After the protective film as shown in Table 6 was attached to the antireflection processed surface side of the antireflection film AR-1 produced in this way, the same procedure as in the production of the transparent electromagnetic wave shielding film S105 of Example 1 was made on the back side. The transparent electromagnetic wave shielding films S601 to S603 were produced.
[0136] 透明電磁波遮断フィルム S604の作製  [0136] Preparation of transparent electromagnetic wave shielding film S604
実施例 1で作製した透明電磁波遮断フィルム S105の裏面に、上述の反射防止フィ ルム (AR— 1)の作製と同じ手法で反射防止層を設け、透明電磁波遮断フィルム S6 04を作製した。  A transparent electromagnetic wave shielding film S640 was prepared by providing an antireflection layer on the back surface of the transparent electromagnetic wave shielding film S105 produced in Example 1 by the same method as in the production of the above-described antireflection film (AR-1).
[0137] このようにして得られた透明電磁波遮断フィルム S601〜S604に対して、実施例 1 と同様の評価を実施した。また、透明電磁波遮断フィルム完成後の反射防止層の状 態を目視観察した。結果を表 6に合わせて示す。  [0137] The transparent electromagnetic wave shielding films S601 to S604 thus obtained were evaluated in the same manner as in Example 1. Further, the state of the antireflection layer after completion of the transparent electromagnetic wave shielding film was visually observed. The results are shown in Table 6.
[0138] [表 6] [0138] [Table 6]
,
電磁波プテクト m  Electromagnetic wave protect m
抵寸防止!耐熱ロ強表比抗;湿制劣化試験面 ¾  Prevention of odds! Heat resistance, strong surface specific resistance; moisture degradation test surface ¾
射防止状態反 «の遮断ルフムフルムィィ透率作製順透過()被膜脆性率変化%弱過 09S L  Anti-reflective state anti-blocking rufumflumyi permeability production forward permeation () film brittleness rate change% slightly over 09S L
射機能防止低反下 Z09S  Z09S
本発明 & £09 S  Invention & £ 09 S
本発明 09S f  Invention 09S f
射あやや反りムラ  Irregular warp unevenness
O 〇 〇 o
Figure imgf000036_0001
m
O ○ ○ o
Figure imgf000036_0001
m
o o O  o o O
oo  oo
#i #i
CM  CM
_i  _i
1 1  1 1
プロテクトフィルム(PF—l): (株)スミロン製 EC— 700 Protective film (PF-l): Sumilon EC-700
プロテクトフィルム (PF— 2):日立化成工業 (株)製 L 5030  Protective film (PF-2): Hitachi Chemical Co., Ltd. L 5030
表 6の結果より、本発明に係る透明電磁波遮断フィルム S601〜S604はいずれも 高い透過率と低い表面比抵抗を示し、また強制劣化試験後の透過率変化が小さぐ 被膜脆弱性の劣化度が小さいという本発明の効果が得られるが、中でも、導電性パ ターンを有する層に対して該フィルムの支持体を挟んだ反対側に反射防止層を有し 、反射防止層を形成後に、プロテクトフィルムを貼り合わせた後、導電性パターン層 が形成された透明電磁波遮断フィルム S602及び S603は、反射防止層における反 射ムラの発生や、反射防止機能の発生を生じることなぐ良好な反射防止層を有した 透明電磁波遮断フィルムを提供できる本発明の好ましい態様であることがわかる。 From the results in Table 6, the transparent electromagnetic wave shielding films S601 to S604 according to the present invention all show high transmittance and low surface resistivity, and the transmittance change after the forced deterioration test is small. Although the effect of the present invention is small, the conductive pattern is particularly important. A transparent electromagnetic wave having an antireflection layer on the opposite side of the film support with respect to the layer having a turn, and after forming the antireflection layer, bonding the protective film, and then forming the conductive pattern layer The shielding films S602 and S603 are a preferable embodiment of the present invention that can provide a transparent electromagnetic wave shielding film having a good antireflection layer without causing occurrence of uneven reflection in the antireflection layer and occurrence of an antireflection function. I understand.

Claims

請求の範囲 The scope of the claims
[1] 支持体上に、少なくとも感光性ハロゲンィ匕銀及びバインダー力もなる層を有する感光 材料に、露光後、現像処理を行い作製される透明電磁波遮断フィルムにおいて、該 感光材料における前記感光性ハロゲンィ匕銀の含有量が銀換算で 0. 05g/m2以上 1 gZm2未満であり、かつ前記バインダーの量が lOmgZm2以上 0. 2gZm2以下であ ることを特徴とする透明電磁波遮断フィルム。 [1] In a transparent electromagnetic wave shielding film produced by subjecting a photosensitive material having a layer having at least a photosensitive halogen silver and a binder force on a support to a development treatment after exposure, the photosensitive halogen silver in the photosensitive material is produced. A transparent electromagnetic wave shielding film, wherein the silver content is 0.05 g / m 2 or more and less than 1 gZm 2 in terms of silver, and the amount of the binder is lOmgZm 2 or more and 0.2 gZm 2 or less.
[2] 前記透明電磁波遮断フィルムにおいて、露光、現像処理後に物理現像または金属 めっきが施され、物理現像または金属めつきにより付与された金属量が、感光材料を 露光、現像処理することにより得られた現像銀量に対して、質量換算で 10倍以上 10 0倍以下であることを特徴とする請求の範囲第 1項に記載の透明電磁波遮断フィルム [2] The transparent electromagnetic wave shielding film is subjected to physical development or metal plating after exposure and development treatment, and the amount of metal imparted by physical development or metal plating is obtained by exposing and developing the photosensitive material. 2. The transparent electromagnetic wave shielding film according to claim 1, which is 10 to 100 times in terms of mass relative to the developed silver amount.
[3] 前記透明電磁波遮断フィルムにお!ヽて、ハロゲン化銀の含有量 (gZm2)をハロゲン 化銀の平均粒径 ( μ m)で除した値が 6以上 25以下であることを特徴とする請求の範 囲第 1項または第 2項に記載の透明電磁波遮断フィルム。 [3] To the transparent electromagnetic wave shielding film! The value obtained by dividing the silver halide content (gZm 2 ) by the average grain size (μm) of the silver halide is 6 or more and 25 or less. 2. The transparent electromagnetic wave shielding film according to item 2.
[4] 前記透明電磁波遮断フィルムにおいて、露光、現像処理後に酸化処理が施されて いることを特徴とする請求の範囲第 1項〜第 3項の何れか 1項に記載の透明電磁波 遮断フィルム。 [4] The transparent electromagnetic wave shielding film according to any one of claims 1 to 3, wherein the transparent electromagnetic wave shielding film is subjected to an oxidation treatment after exposure and development.
[5] 前記透明電磁波遮断フィルムにおいて、露光、現像処理後に黒化処理が施されて いることを特徴とする請求の範囲第 1項〜第 4項の何れか 1項に記載の透明電磁波 遮断フィルム。  [5] The transparent electromagnetic wave shielding film according to any one of claims 1 to 4, wherein the transparent electromagnetic wave shielding film is blackened after exposure and development processing. .
[6] 前記透明電磁波遮断フィルムにお!、て、感光性ハロゲン化銀粒子が分光増感され ていることを特徴とする請求の範囲第 1項〜第 5項の何れ力 1項に記載の透明電磁 波遮断フィルム。  [6] The force according to any one of claims 1 to 5, wherein the transparent electromagnetic wave shielding film is spectrally sensitized with photosensitive silver halide grains. Transparent electromagnetic wave shielding film.
[7] 前記透明電磁波遮断フィルムにおいて、該フィルムが少なくとも 1層の紫外線吸収層 を有していることを特徴とする請求の範囲第 1項〜第 6項の何れか 1項に記載の透明 電磁波遮断フィルム。  [7] The transparent electromagnetic wave according to any one of [1] to [6], wherein the transparent electromagnetic wave shielding film has at least one ultraviolet absorbing layer. Barrier film.
[8] 前記透明電磁波遮断フィルムにお!、て、該フィルムの支持体を挟んだ両面に各々異 なる導電性パターンを有していることを特徴とする請求の範囲第 1項〜第 7項の何れ カゝ 1項に記載の透明電磁波遮断フィルム。 [8] The transparent electromagnetic wave shielding film according to any one of claims 1 to 7, wherein the transparent electromagnetic wave shielding film has different conductive patterns on both surfaces sandwiching the support of the film. Any of 2. The transparent electromagnetic wave shielding film according to item 1.
[9] 前記透明電磁波遮断フィルムにおいて、導電性パターンを有する層に対して該フィ ルムの支持体を挟んだ反対側に反射防止層を有し、反射防止層を形成後に、プロテ タトフィルムを貼り合わせた後、導電性パターン層が形成されることを特徴とする請求 の範囲第 1項〜第 7項の何れ力 1項に記載の透明電磁波遮断フィルム。 [9] The transparent electromagnetic wave shielding film has an antireflection layer on the opposite side of the layer having the conductive pattern with respect to the layer having the conductive pattern, and after forming the antireflection layer, the protective film is bonded together. The transparent electromagnetic wave shielding film according to any one of claims 1 to 7, wherein a conductive pattern layer is formed thereafter.
[10] 請求の範囲第 1項〜第 9項の何れ力 1項に記載の透明電磁波遮断フィルムの作製方 法であって、露光、現像処理により得られた現像銀に対して補力処理を施すことを特 徴とする透明電磁波遮断フィルムの作製方法。 [10] A method for producing a transparent electromagnetic wave shielding film according to any one of claims 1 to 9, wherein the intensifying treatment is applied to the developed silver obtained by exposure and development. A method for producing a transparent electromagnetic wave shielding film characterized by being applied.
PCT/JP2007/063978 2006-07-20 2007-07-13 Transparent electromagnetic shielding film and process for producing the same WO2008010461A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006197819 2006-07-20
JP2006-197819 2006-07-20

Publications (1)

Publication Number Publication Date
WO2008010461A1 true WO2008010461A1 (en) 2008-01-24

Family

ID=38956794

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/063978 WO2008010461A1 (en) 2006-07-20 2007-07-13 Transparent electromagnetic shielding film and process for producing the same

Country Status (1)

Country Link
WO (1) WO2008010461A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221565A (en) * 2002-12-27 2004-08-05 Fuji Photo Film Co Ltd Translucent electromagnetic wave shielding film and manufacturing method therefor
JP2004253329A (en) * 2003-02-21 2004-09-09 Mitsubishi Paper Mills Ltd Method of manufacturing transparent conductive film
JP2006012935A (en) * 2004-06-23 2006-01-12 Fuji Photo Film Co Ltd Transparent electromagnetic wave shield film and method of manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221565A (en) * 2002-12-27 2004-08-05 Fuji Photo Film Co Ltd Translucent electromagnetic wave shielding film and manufacturing method therefor
JP2004253329A (en) * 2003-02-21 2004-09-09 Mitsubishi Paper Mills Ltd Method of manufacturing transparent conductive film
JP2006012935A (en) * 2004-06-23 2006-01-12 Fuji Photo Film Co Ltd Transparent electromagnetic wave shield film and method of manufacturing the same

Similar Documents

Publication Publication Date Title
US7404915B2 (en) Electromagnetic wave shielding material, method of manufacturing the same and electromagnetic wave shielding material for plasma display panel
JPWO2007007698A1 (en) Electromagnetic wave shielding material, manufacturing method thereof, and electromagnetic wave shielding material for plasma display panel
JP2006012935A (en) Transparent electromagnetic wave shield film and method of manufacturing the same
JP2009026933A (en) Method of manufacturing electromagnetic wave shield film, and electromagnetic wave shield film
JPS63138342A (en) Silver halide photosensitive material sensitized with luminous dye
JP2006228480A (en) Translucent conductive film and its manufacturing method, and optical filter for plasma display using translucent conductive film
JP2008288305A (en) Electromagnetic wave shield film and method of manufacturing the same
JP2008300720A (en) Light transmissive conductive film and electromagnetic wave shielding filter
JP2009038078A (en) Electromagnetic wave shield film, and plasma display panel
JP2008277676A (en) Transparent electromagnetic wave shield film and manufacturing method thereof, and plasma display panel
JP2009016526A (en) Transparent electromagnetic wave shielding film and its manufacturing method
JP2008270405A (en) Transparent electromagnetic wave shielding film, its manufacturing method, and plasma display panel using film
JP2008218784A (en) Photosensitive material for electromagnetic wave shielding material and manufacturing method of the electromagnetic wave shielding material
JP5131268B2 (en) Transparent film having conductive metal pattern and method for producing the same
WO2008010461A1 (en) Transparent electromagnetic shielding film and process for producing the same
JP2008282840A (en) Forming method of translucent conductive thin film, forming apparatus thereof and translucent conductive thin film obtained by the apparatus
JP2008300721A (en) Electromagnetic wave shielding material roll body for display
JP2009021334A (en) Transparent electromagnetic wave shielding film, and manufacturing method thereof
JP2009004213A (en) Light-transmitting conductive film, manufacturing method therefore, and light-transmitting electromagnetic wave shielding film
JP2007287960A (en) Electromagnetic wave shielding material and method for fabricating electromagnetic wave shielding material
JP2009010001A (en) Electromagnetic wave shielding film manufacturing method, and electromagnetic wave shielding film
JPH01266536A (en) Infra-red sensitive silver halide photosensitive material
JP2006276208A (en) Optical filter for display
JP2008283029A (en) Manufacturing method of electromagnetic wave shielding film, and electromagnetic wave shielding film
JP2008071862A (en) Silver halide photosensitive material for forming electromagnetic wave shielding film, electromagnetic wave shielding film and its manufacturing method

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07790759

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

NENP Non-entry into the national phase

Ref country code: JP

122 Ep: pct application non-entry in european phase

Ref document number: 07790759

Country of ref document: EP

Kind code of ref document: A1