WO2008007336A3 - Procédé de production de matériau à base de diamant - Google Patents
Procédé de production de matériau à base de diamant Download PDFInfo
- Publication number
- WO2008007336A3 WO2008007336A3 PCT/IB2007/052751 IB2007052751W WO2008007336A3 WO 2008007336 A3 WO2008007336 A3 WO 2008007336A3 IB 2007052751 W IB2007052751 W IB 2007052751W WO 2008007336 A3 WO2008007336 A3 WO 2008007336A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- diamond material
- facets
- crystal
- ppm
- nitrogen
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/061—Graphite
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/062—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/068—Crystal growth
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
La présente invention concerne un matériau à base de diamant synthétique ayant au moins deux des caractéristiques suivantes : (i) une teneur en azote égale ou supérieure à 100 ppm ; (ii) un indice de morphologie cristalline (CMI) soit inférieur à quatre (4) soit supérieur à six (6) ; (iii) une distribution uniforme d'azote dans le volume majoritaire du cristal, le volume majoritaire étant égal ou supérieur à 50% du volume total du cristal ; (iv) une faible teneur en impureté de métal de transition, 'faible' représentant moins de 100 ppm en poids ; et (v) une forme cristalline exempte de facettes mineures, 'facettes mineures' signifiant toutes les facettes autres que des facettes {100} et {111}. L'invention concerne également un procédé de production de matériau à base de diamant comprenant l'étape de mise à disposition d'une masse réactionnelle comportant suffisamment d'azote pour permettre d'obtenir un matériau à base de diamant ayant une teneur en azote égale ou supérieure à 100 ppm en combinaison avec un vecteur de métal de transition et le traitement de la masse réactionnelle à une température supérieure à 1200°C et une pression supérieure à 5 GPa.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ZA2006/05663 | 2006-07-10 | ||
ZA200605663 | 2006-07-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008007336A2 WO2008007336A2 (fr) | 2008-01-17 |
WO2008007336A3 true WO2008007336A3 (fr) | 2008-05-15 |
Family
ID=38923652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2007/052751 WO2008007336A2 (fr) | 2006-07-10 | 2007-07-10 | Procédé de production de matériau à base de diamant |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2008007336A2 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201404633D0 (en) * | 2014-03-14 | 2014-04-30 | Element Six Abrasives Sa | Diamond grains, tools comprising same and methods of using same |
JP6582597B2 (ja) * | 2015-06-19 | 2019-10-02 | 住友電気工業株式会社 | ダイヤモンド単結晶、工具およびダイヤモンド単結晶の製造方法 |
GB201608669D0 (en) | 2016-05-17 | 2016-06-29 | Element Six Uk Ltd | Diamond tool piece |
CN115232615B (zh) * | 2022-06-23 | 2024-01-23 | 西安电子科技大学 | 硅空位色心发光强度可调控的微晶金刚石晶粒的制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3442616A (en) * | 1965-11-13 | 1969-05-06 | Tokyo Shibaura Electric Co | Method of making synthetic diamond crystals |
US4174380A (en) * | 1976-07-21 | 1979-11-13 | General Electric Company | Annealing synthetic diamond type Ib |
EP0239239A1 (fr) * | 1986-02-24 | 1987-09-30 | De Beers Industrial Diamond Division (Proprietary) Limited | Détecteur de rayonnement à diamant et procédé de détection |
EP0346794A1 (fr) * | 1988-06-13 | 1989-12-20 | Sumitomo Electric Industries, Ltd. | Cristal de laser en diamant et méthode de sa fabrication |
US20010043903A1 (en) * | 1996-11-12 | 2001-11-22 | D'evelyn Marl Philip | Surface impurity-enriched diamond and method of making |
WO2005084334A2 (fr) * | 2004-03-01 | 2005-09-15 | Chien-Min Sung | Synthese de particules superabrasives a distribution controlee de cristaux germes |
-
2007
- 2007-07-10 WO PCT/IB2007/052751 patent/WO2008007336A2/fr active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3442616A (en) * | 1965-11-13 | 1969-05-06 | Tokyo Shibaura Electric Co | Method of making synthetic diamond crystals |
US4174380A (en) * | 1976-07-21 | 1979-11-13 | General Electric Company | Annealing synthetic diamond type Ib |
EP0239239A1 (fr) * | 1986-02-24 | 1987-09-30 | De Beers Industrial Diamond Division (Proprietary) Limited | Détecteur de rayonnement à diamant et procédé de détection |
EP0346794A1 (fr) * | 1988-06-13 | 1989-12-20 | Sumitomo Electric Industries, Ltd. | Cristal de laser en diamant et méthode de sa fabrication |
US20010043903A1 (en) * | 1996-11-12 | 2001-11-22 | D'evelyn Marl Philip | Surface impurity-enriched diamond and method of making |
WO2005084334A2 (fr) * | 2004-03-01 | 2005-09-15 | Chien-Min Sung | Synthese de particules superabrasives a distribution controlee de cristaux germes |
Non-Patent Citations (1)
Title |
---|
KIFLAWI I ET AL: "The effect of the growth rate on the concentration of nitrogen and transition metal impurities in HPHT synthetic diamonds", DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 11, no. 2, February 2002 (2002-02-01), pages 204 - 211, XP004336318, ISSN: 0925-9635 * |
Also Published As
Publication number | Publication date |
---|---|
WO2008007336A2 (fr) | 2008-01-17 |
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