WO2007145701A3 - Nanoscale wire methods and devices - Google Patents

Nanoscale wire methods and devices Download PDF

Info

Publication number
WO2007145701A3
WO2007145701A3 PCT/US2007/008540 US2007008540W WO2007145701A3 WO 2007145701 A3 WO2007145701 A3 WO 2007145701A3 US 2007008540 W US2007008540 W US 2007008540W WO 2007145701 A3 WO2007145701 A3 WO 2007145701A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanoscale wires
devices
substrate
methods
nanoscale
Prior art date
Application number
PCT/US2007/008540
Other languages
French (fr)
Other versions
WO2007145701A2 (en
Inventor
Sung Woo Nam
Ali Javey
Charles M Lieber
Original Assignee
Harvard College
Sung Woo Nam
Ali Javey
Charles M Lieber
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harvard College, Sung Woo Nam, Ali Javey, Charles M Lieber filed Critical Harvard College
Publication of WO2007145701A2 publication Critical patent/WO2007145701A2/en
Publication of WO2007145701A3 publication Critical patent/WO2007145701A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Wire Processing (AREA)
  • Thin Film Transistor (AREA)

Abstract

The present invention generally relates to nanoscale wire methods and devices, including systems and methods for positioning nanoscale wires on a surface, and articles made therefrom. One aspect of the invention is generally directed to aligned nanoscale wires on a surface of a substrate, and systems and methods of positioning such nanoscale wires on the surface. In one set of embodiments, a first substrate is provided having a plurality of nanoscale wires, and at least some of the nanoscale wires are transferred to a second substrate by contacting at least some of the nanoscale wires with the second substrate, e.g., by moving or 'sliding' the substrates relative to each other, in some cases causing alignment of the nanoscale wires on the second substrate. Another aspect of the invention is generally directed to electrical devices comprising a number of planes defined by nanoscale wires, e.g., in a 'stacked' configuration. Yet other aspects of the invention are directed to nanoscale wires that can be used as sensors, e.g., in such devices. Still other aspects of the invention are directed to systems and methods for making and using such devices, kits involving the same, and the like.
PCT/US2007/008540 2006-04-07 2007-04-06 Nanoscale wire methods and devices WO2007145701A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79032206P 2006-04-07 2006-04-07
US60/790,322 2006-04-07

Publications (2)

Publication Number Publication Date
WO2007145701A2 WO2007145701A2 (en) 2007-12-21
WO2007145701A3 true WO2007145701A3 (en) 2008-05-29

Family

ID=38739359

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/008540 WO2007145701A2 (en) 2006-04-07 2007-04-06 Nanoscale wire methods and devices

Country Status (1)

Country Link
WO (1) WO2007145701A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2417992C (en) 2000-08-22 2010-10-19 President And Fellows Of Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
EP1342075B1 (en) 2000-12-11 2008-09-10 President And Fellows Of Harvard College Device contaning nanosensors for detecting an analyte and its method of manufacture
WO2007044034A2 (en) 2004-12-06 2007-04-19 President And Fellows Of Harvard College Nanoscale wire-based data storage
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
US8058640B2 (en) 2006-09-11 2011-11-15 President And Fellows Of Harvard College Branched nanoscale wires
WO2008127314A1 (en) 2006-11-22 2008-10-23 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
US7520951B1 (en) 2008-04-17 2009-04-21 International Business Machines (Ibm) Corporation Method of transferring nanoparticles to a surface
US7960653B2 (en) 2008-07-25 2011-06-14 Hewlett-Packard Development Company, L.P. Conductive nanowires for electrical interconnect
WO2011021183A2 (en) * 2009-08-17 2011-02-24 Ramot At Tel-Aviv University Ltd. Aligned nanoarray and method for fabricating the same
WO2011038228A1 (en) 2009-09-24 2011-03-31 President And Fellows Of Harvard College Bent nanowires and related probing of species
CN102409462B (en) * 2011-08-31 2014-01-22 青岛大学 Method for printing disordered micro nanofibers into ordered fiber array
WO2013166259A1 (en) 2012-05-03 2013-11-07 President And Fellows Of Harvard College Nanoscale sensors for intracellular and other applications
US20170352542A1 (en) 2014-10-30 2017-12-07 President And Fellows Of Harvard College Nanoscale wires with tip-localized junctions

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001281965A (en) * 2000-03-31 2001-10-10 Ricoh Co Ltd Method for manufacturing contact type electrostatic charger, contact type electrostatic charger obtained by this method, electrostatic charging method and image recorder
EP1170799A2 (en) * 2000-07-04 2002-01-09 Infineon Technologies AG Electronic device and method of manufacture of an electronic device
US20040075464A1 (en) * 2002-07-08 2004-04-22 Btg International Limited Nanostructures and methods for manufacturing the same
US20060019472A1 (en) * 2004-04-30 2006-01-26 Nanosys, Inc. Systems and methods for nanowire growth and harvesting

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001281965A (en) * 2000-03-31 2001-10-10 Ricoh Co Ltd Method for manufacturing contact type electrostatic charger, contact type electrostatic charger obtained by this method, electrostatic charging method and image recorder
EP1170799A2 (en) * 2000-07-04 2002-01-09 Infineon Technologies AG Electronic device and method of manufacture of an electronic device
US20040075464A1 (en) * 2002-07-08 2004-04-22 Btg International Limited Nanostructures and methods for manufacturing the same
US20060019472A1 (en) * 2004-04-30 2006-01-26 Nanosys, Inc. Systems and methods for nanowire growth and harvesting

Also Published As

Publication number Publication date
WO2007145701A2 (en) 2007-12-21

Similar Documents

Publication Publication Date Title
WO2007145701A3 (en) Nanoscale wire methods and devices
WO2008063337A3 (en) Semiconductor-on-diamond devices and associated methods
WO2007061854A3 (en) Compliant base to increase contact for micro- or nano-fibers
SG152101A1 (en) An interconnect structure and a method of fabricating the same
WO2010002515A3 (en) Low-cost substrates having high-resistivity properties and methods for their manufacture
WO2010139342A8 (en) Lens and method for manufacturing same
EP2049943A4 (en) Electrochromic device contacting
WO2006123335A3 (en) Building structures having electrically functional architectural surfaces
WO2007021676A3 (en) Fuel cell component with coating including nanoparticles
WO2007135076A3 (en) Patterning nanowires on surfaces for fabricating nanoscale electronic devices
WO2007120877A3 (en) Transfer surface for manufacturing a light emitting device
WO2008097860A3 (en) Groutless tile systems and method for making same
WO2007071723A3 (en) Optical article having an antistatic, antireflection coating and method of manufacturing same
WO2006041592A3 (en) Large-scale manufacturing process for the production of pharmaceutical compositions
WO2008103668A3 (en) Silane coating compositions, coating systems, and methods
SG150467A1 (en) Interconnected-multi-element-lattice polishing pad
WO2008021791A3 (en) Nano structured phased hydrophobic layers on substrates
TW200739972A (en) Light-emitting device and method for manufacturing the same
WO2008079443A3 (en) Method of forming a multifilament ac tolerant conductor with striated stabilizer, articles related to the same, and devices incorporating the same
WO2009077538A3 (en) Process of assembly with buried marks
WO2008051503A3 (en) Light-emitter-based devices with lattice-mismatched semiconductor structures
WO2011066529A3 (en) Three-dimensional patterning methods and related devices
WO2009037600A3 (en) Solid substrate with surface bound molecules and methods for producing and using the same
WO2007025521A3 (en) Method for the production of a semiconductor component comprising a planar contact, and semiconductor component
WO2010005592A3 (en) Microelectronic interconnect element with decreased conductor spacing

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07809006

Country of ref document: EP

Kind code of ref document: A2