WO2007133025A1

WO2007133025A1 - Apparatus and methods for preparation of high-purity silicon rods using mixed core means

Info

Publication number: WO2007133025A1
Application number: PCT/KR2007/002345
Authority: WO
Inventors: Hee Young Kim; Kyung Koo Yoon; Yong Ki Park; Won Wook So; Won Choon Choi
Original assignee: Korea Research Institute Of Chemical Technology
Priority date: 2006-05-11
Filing date: 2007-05-11
Publication date: 2007-11-22
Also published as: US20100040803A1; JP2009536914A; EP2024536B1; EA200870527A1; EP2024536A4; JP5158608B2; EP2024536A1; KR100768147B1; CA2652493C; EA013675B1; CN101405437A; ES2585677T3; CN101405437B; US8430959B2; US20090130333A1; CA2652493A1

Abstract

Disclosed are a method and an apparatus for preparing a polycrystalline silicon rod using a mixed core means, comprising: installing a first core means made of a resistive material together with a second core means made of silicon material in an inner space of a deposition reactor; electrically heating the first core means and pre-heating the second core by the first core means which is electrically heated; electrically heating the preheated second core means; and supplying a reaction gas into the inner space in a state where the first core means and the second core means are electrically heated for silicon deposition.

Description

APPARATUS AND METHODS FOR PREPARATION OF HIGH-PURITY

SILICON RODS USING MIXED CORE MEANS

Technical Field

The present invention relates to a method and an apparatus for preparing

rod-shaped polycrystalline silicon. More particularly, the present invention relates to

a method and an apparatus which can minimize difficulties in constructing and

operating an electrical heating system for heating a core means installed in a silicon

deposition reactor used for bulk production of rod-shaped polycrystalline silicon

(silicon polycrystal, multicrystalline silicon, polysilicon or poly-Si).

Background Art

In general, high-purity polycrystalline silicon is used as an important raw

material for a semiconductor device, a solar cell, a chemical processing unit, an

industrial system, or a small-sized and other highly integrated precision devices,

which is respectively composed of a material with high purity or semiconducting

properties.

The polycrystalline silicon is prepared using a silicon deposition method,

wherein silicon atoms deposit continuously on the surface of silicon by thermal decomposition and/ or hydrogen reduction of a highly-purified silicon

atom-containing reaction gas.

For bulk production of polycrystalline silicon, a bell-jar type, a tube-type or a

chamber-type deposition reactor has been mainly used. According to the deposition

reactor, polycrystalline silicon is prepared generally in the shape of a rod with a

circular or oval cross-section whose diameter is in the range of about 50 - 300 mm.

In the deposition reactor, a core means is basically installed for preparation of

the silicon rod.. For commercial production, the core means is composed of a

plurality of core units respectively made of a core material (i.e., core element),

through which electricity can flow at a deposition reaction temperature. The core

units constituting a core means are connected to electrode units, respectively, to

complete an electrical heating means in the reactor shell. Then, silicon deposits

continuously on the surface of the electrically heated core means by a deposition

reaction of a reaction gas comprising a silicon-containing component. As described

above, the silicon deposition output is formed and enlarged in a thickness direction,

that is, in an outward, radial direction of the concentric cross-section of the

deposition output, and thus a rod-shaped polycrystalline silicon product can be

obtained finally.

To obtain a high-purity product with minimized impurity contamination, the core units represented by a core means may be made of or fabricated with a

non-contaminating core element. An ideal material for the core element is

high-purity silicon that is formed like a rod, a wire or a filament, a hollow duct or a

tube, a strip or ribbon, or a sheet, etc.

The polycrystalline silicon rods obtained finally by forming the deposition

output around the core means are (i) divided or pulverized into the shape of chunks,

nuggets, chips or particles, (ii) grouped according to size, (iii) subject to an

additional step of cleaning, if required, to remove impurity components formed on

the surface of silicon fragments during the pulverizing step, (iv) melted in a crucible

which is heated above the melting point of silicon, and then (v) formed into an ingot,

block, sheet, ribbon or film, etc., according to a use thereof.

An electrical heating means constructed within the deposition reactor shell

consists of a core means which is electrically heated and an electrode means

electrically connecting the core means to an electric power supply source located

outside of the shell and/ or electrically connecting the core units with each other.

This electrical heating means serves to provide (i) an electrical heating required for

maintaining a deposition reaction temperature, (ii) a starting substrate for silicon

deposition, and (iii) a mechanical structure for stably supporting the silicon rod that

grows in diameter and weight as the deposition continues. Each of the core units constituting the core means should be made of or

fabricated with such a core element material that satisfies the function and role of the

core means. To achieve this purpose, (i) a high-purity silicon is melted alone or

with a dopant component, (ii) the silicon melt is subject to crystal growing or casting,

and (iii) the core element is prepared through a forming process and/ or a machining

process, thereby shaping its cross-section into a circle, an oval, a concentric circle or

polygon, a triangle, a tetragon or a hexagon, etc.; its diameter or diagonal length

may be in the range of about 3 - 30 mm or 5 - 100 mm, respectively, with its length

being about 0.5 - 6 m.

There are several ways in preparing the core element. Each piece of the core

element may be prepared in a sequential manner. Or, a plurality of core elements

with a uniform size and shape may be prepared simultaneously by simply cutting a

large-sized single crystal ingot. Further, a long silicon core element may be prepared

by melt connection of a plurality of short pieces of core element under a clean

atmosphere.

According to the description in the reference document of W.C. OΗara, R.B.

Herring and L.P. Hunt, "Handbook of Semiconductor Silicon Technology", pp 46-48,

Noyes, Publication, 1990, preparing a core element made of the high-purity silicon

material, such as a core rod, a slim rod or a starter filament having a small diameter, entails a great deal of economical and technological burden in a process of preparing

poly crystalline silicon rod using the deposition reactor. When the core element is

made of a high-purity silicon, whose resistivity is extremely high at room

temperature and drastically decreases with temperature increase, the core means

begins to be electrically heated due to the occurrence of an apparent current through

each core unit connected and fixed to a pair of electrode units only after the core

units constituting the core means are preheated to a certain temperature or above by

an additional heating means for lowering sufficiently the value of silicon resistivity.

As disclosed in U. S. Patent Nos. 4,179,530 (1979) and 5,895,594 (1999), preheating

the core means for preparing a poly crystalline silicon rod requires a separate,

additional preheating means and a complicated procedure.

Meanwhile, U.S. Patent Nos. 3,941,900 (1976) and 4,215,154 (1990) disclose a

technical solution to apply a direct electrical resistive heating to a core means

starting from room temperature using a properly constructed electric power supply

system, instead of preheating the high-purity silicon core element with a separate,

additional preheating means. However, this method also has drawbacks that such

an electric power supply circuit and system is highly sophisticated and costly, and

requires very complicated and precise operation and control.

Unlike those methods by which the core means is preheated by a separate preheating means or is heated directly at room temperature by resistive heating

using a sophisticated power supply system, incorporating a high concentration of n-

or ρ-tyρe dopant artificially in the silicon core element to greatly lower the resistivity

enables to electrically heat up the core means directly at room temperature with

high-voltage electricity. After being heated up to a predetermined temperature

range, the core means can be easily heated as required with low-voltage and

high-current electricity. This method has a drawback that it requires a complicated

electric power supply means and a precise operation over a wide range of voltage

and current.

On the other hand, if the core element is made of a non-silicon resistive

material such as a metal or a carbon-based material with a resistivity value much

lower than that of silicon, a silicon deposition output formed on an individual core

unit can be contaminated by the impurity components generated and diffused from

the core element made of a non-silicon material. However, there is an advantage

that, by supplying a low-voltage electricity, the core means can be easily heated up

by a resistive heating from room temperature over a deposition reaction temperature

without a separate, additional preheating step. According to U.S. Patent Nos.

5,277,934 (1994) and 5,284,640 (1994), tungsten or tantalum can be used as the core

element instead of silicon. Meanwhile, U.S. Patent No. 5,237,454 (1994) illustrates a core element made of molybdenum, tungsten or zirconium instead of high-purity

silicon material.

The non-silicon core means made of a resistive material as described above

can be prepared conveniently and cost-effectively. However, the deposition output

obtained by silicon deposition cannot avoid being contaminated by the impurity

components contained in the non-silicon core element for each of the core units

constituting the core means. Thus it is difficult to apply the above method of using a

non-silicon core means to a commercial production of a high-purity polycrystalline

silicon rod because the purity requirement on the semiconductor-grade quality has

recently become further stringent. Such a fundamental problem has also been

confirmed in the prior art, as described in the above reference document (1990) of

O'Hara et al. In the event a wire-type non-silicon, metallic core unit is used for the

core means instead of the silicon-based core means, there is an advantage that a

silicon rod product can be obtained rather conveniently. However, this method also

has several disadvantages: first, when the silicon rod is finally formed as required,

the deposition output and the core means included in the silicon rod should be

separated with each other for the deposition output to be collected as silicon

product; secondly, the deposition output formed through the silicon deposition

process at a high-temperature should probably be contaminated by the impurity components out of the metallic core element.

To prepare high-purity polycrystalline silicon at a reasonable cost based on

the bell-jar deposition process without any difficulties in the preheating of the silicon

core means, it is worthwhile to apply a non-silicon, resistive material for the core

element by solving the problems due to the replacement of the core material; the

problems include a possibly difficult step for separating the core means out of the

silicon rod output for collecting the silicon deposition output as product as well as a

probable product contamination by the metallic impurity components out of the

non-silicon core material. However, despite of the importance of the preheating of

the core means, a simple, cost-effective solution has not been available to overcome

those problems arising in applying the non-silicon core means.

As described above, to develop an improved method and means in

preheating the core means in the bell-jar type reactor is an important technical issue

for commercial bulk production of polycrystalline silicon in the form of a rod. The

technical solutions required for the improvement should reduce investment costs for

an electric power supply and control system and a process for preparing and

machining the core means, allow an easy operation and control of the deposition

reactor, enhance the reactor productivity, and ultimately lower the manufacturing

cost. Disclosure of the Invention

Accordingly, an object of the present invention is to provide a method and a

means for eliminating or reducing any factors that may negatively affect the

investment costs for the deposition process equipment, the process operation and

control, the reactor productivity and the manufacturing cost in terms of the

preheating of the core means.

Another object of the present invention is, for construction and use of a

commercial-scale process for preparing polycrystalline silicon in a rod shape, to

electrically and easily heat the second core means made of silicon by: (a) installing a

first core means made of a resistive material together with a second core means

made of silicon material in an inner space of a deposition reactor; (b) electrically

heating the first core means and pre-heating the second core by the first core means

which is electrically heated; and then (c) electrically heating the preheated second

core means.

A further object of the present invention is to solve problems encountered in

preheating the core means, without lowering the production capacity of the

deposition reactor, by forming a deposition output in an outward direction of the

first and second core means with the first core means being served as a preheater for the second core means.

A still further object of the present invention is to provide a method and a

means which can solve problems encountered in preheating a core means made of

high-purity silicon, and can also be exercised in an existing, conventional deposition

reactor for preparing rod-shaped polycrystalline silicon.

A still further object of the present invention is to provide a structure of the

deposition reactor, a method and a means for operating the deposition reactor which

can yield simultaneously two-grades of polycrystalline silicon products to be used

for semiconductor devices and solar cells, respectively.

A still further object of the present invention is to provide a method and a

means which can minimize the contamination of the deposition output enlarged by

silicon deposition in an outward, radial direction of the first core means, which

consists of and represents a plurality of core units whose respective element (i.e.,

core element) is made of a material other than a high-purity silicon and thus can

generate impurity components as the source of the output contamination.

In order to achieve the aforementioned objects, the present invention

provides a method for preparing a polycrystalline silicon rod using a mixed core

means comprising: installing a first core means made of a resistive material together

with a second core means made of a silicon material in an inner space of the deposition reactor; electrically heating the first core means and preheating the

second core means by the first core means which is electrically heated; electrically

heating the preheated second core means; and supplying a reaction gas into the

inner space in a state where the first core means and the second core means are

electrically heated for silicon deposition.

Optionally, in the step of electrically heating the preheated second core

means, the entire second core means is electrically heated simultaneously or the

second core means is divided into a plurality of second core groups which start to be

electrically heated in groups at different starting times.

In a preferred embodiment, in the step of pre-heating the second core means,

the second core means is pre-heated to a temperature in the range of 350 - 1,000 ⁰C

with the first core means being electrically heated to a temperature in the range of

400 - 3,000 ⁰C.

Optionally, in the step of pre-heating the second core means, the second core

means is preheated in the inner space at a pressure in the range of 1-20 bar absolute

under an atmosphere selected from the group consisting of hydrogen, nitrogen,

argon, helium and a mixture thereof.

In a preferred embodiment, the reaction gas is supplied for a silicon

deposition reaction, by which a deposition output is formed outwardly on the first core means and/ or the second core means with a first deposition output and/ or a

second deposition output being formed thereby, respectively, at a reaction pressure

and a reaction temperature.

In a preferred embodiment, the reaction gas contains at least one

silicon-containing component selected from the group consisting of monosilane

(SiH4), dichlorosilane (SiH2Cl2), trichlorosilane (SiHCtø), silicon tetrachloride (SiCk)

and a mixture thereof.

Optionally, the reaction gas further contains at least one gas component

selected from the group consisting of hydrogen, nitrogen, argon, helium, hydrogen

chloride, and a mixture thereof.

In a preferred embodiment, the silicon deposition occurs in the inner space at

a reaction pressure in the range of 1 - 20 bar absolute and a reaction temperature in

the range of 650 - 1,300 ⁰C based on the surface temperature of the first deposition

output and/ or the second deposition output.

Optionally, a solar-grade polycrystalline silicon to be used for solar cells is

formed in the first deposition output, and an electronic-grade polycrystalline silicon

to be used for semiconductor devices is formed in the second deposition output.

The present invention relates to an apparatus for preparing the

polycrystalline silicon rod using a mixed core means and comprising a deposition reactor in which a silicon deposition reaction is carried out, characterized in that the

deposition reactor has a sealed inner space formed therein by a base unit and a shell

and comprises a gas supply means for supplying a reaction gas into the inner space,

a gas outlet means for discharging an off-gas from the inner space and an electrical

heating means required for the silicon deposition reaction; the electrical heating

means consists of an electrode means and a core means; the core means is divided

into a first core means made of a resistive material and a second core means made of

a silicon material; and the electrode means is divided into a first electrode means

and a second electrode means, which are connected to the first core means and the

second core means, respectively, and are electrically independent from each other.

In a preferred embodiment, the first electrode means and/ or the second

electrode means are/ is installed on the base unit.

Optionally, the first electrode means is divided into one or a plurality of first

electrode groups and the second electrode means is divided into one or a plurality of

second electrode groups, with electric powers being independently supplied to the

respective electrode groups.

In a preferred embodiment, the first electrode means is constructed such that

an electric power required for heating the first core means is independently supplied

from a first electric power supply source through a first electric power transmitting means, and the second electrode means is constructed such that an electric power

required for heating the second core means is independently supplied from a second

electric power supply source through a second electric power transmitting means.

Optionally, the first electric power supply source and the second electric

power supply source are constituted separately as independent electric power

converting systems or constituted as one integrated electric power converting

system.

Optionally, the first core means comprised in one or a plurality of deposition

reactors are electrically interconnected with each other by the first electric power

supply source.

Optionally, the second core means comprised in one or a plurality of

deposition reactors are electrically connected to each other by the second electric

power supply source.

In a preferred embodiment, the first core means or the second core means

have a shape selected from the group consisting of a rod, a wire, a filament, a bar, a

strip and a ribbon having a cross-sectional shape of a circle, an oval or a polygon,

and of a conduit, a tube, a cylinder, and a duct having a cross-sectional shape of a

concentric circle, a concentric oval or a concentric polygon.

In the preferred embodiment, wherein the resistive material is a metal or an alloy comprising at least one metal element selected from the group consisting of

tungsten (W), rhenium (Re), osmium (Os), tantalum (Ta), molybdenum (Mo),

niobium (Nb), iridium (Ir), ruthenium (Ru), technetium (Tc), hafnium (Hf), rhodium

(Rh), vanadium (V), chromium (Cr), zirconium (Zr), platinum (Pt), thorium (Th),

lanthanum (La), titanium (Ti), lutetium (Lu), yttrium (Y), ferrum (Fe), nickel (Ni),

aluminum (Al) and a mixture thereof.

Optionally, the resistive material is a ceramic metal material containing at

least one component selected from the group consisting of molybdenum suicide

(Mo-Si), lanthanum chromium oxide (La-Cr-O), zirconia and a mixture thereof.

Optionally, wherein the resistive material is a carbon-based material

comprising at least one component selected from the group consisting of amorphous

carbon, graphite, silicon carbide (SiC) and a mixture thereof.

In a preferred embodiment, the silicon material is selected from the group

consisting of intrinsic polycrystalline silicon, intrinsic single crystalline silicon,

doped silicon and a mixture thereof.

Also, the first core means is constituted by forming one or a plurality of

separation layer(s) made of a barrier component on the surface of a first core element

made of a resistive material.

Here, the number of the separation layer(s) is in the range of 1 to 5, and thus the first core means may consist of one to five kinds of the separation layer(s).

In a preferred embodiment, a barrier component constituting each layer of

the separation layer(s) is selected from the group consisting of intrinsic silicon

nitride, silicon oxide, silicon carbide, silicon oxynitride and a mixture thereof.

Here, the barrier component constituting each layer of the separation layer(s)

is selected from a nitride, an oxide, a silicide, a carbide, an oxynitride or an

oxysilicide comprising at least one metal element selected from the group consisting

of tungsten (W), rhenium (Re), osmium (Os), tantalum (Ta), molybdenum (Mo),

(Rh), vanadium (V), chromium (Cr), zirconium (Zr), platinum (Pt), thorium (Th),

lanthanum (La), titanium (Ti), lutetium (Lu), yttrium (Y), and a mixture thereof.

Optionally, the overall thickness of the separation layer(s) formed on the first

core element of the first core means is in the range of 10 nm to 20 mm.

Optionally, the first core units constituting the first core means is

heat-treated at a temperature in the range of 400 - 3,000 ⁰C regardless of the

formation of the separation layer(s), and the heat treatment can be carried out by

being electrically heated in the above-mentioned deposition reactor or in a

conventional deposition reactor.

In the first core means, however, a silicon layer is formed on the separation layer, with the thickness of the silicon layer being in the range of 1 μm - 10 mm and

silicon being selected as the barrier component.

At this time, the first core means is constructed by surrounding the surface of

the first core element with a plurality of separation layer constituting units made of

the barrier component.

On the other hand, the separation layer is formed by coating a barrier

component on the surface of the first core element.

Optionally, part of the separation layer(s) or the entire separation layer(s) can

be formed in the above-mentioned deposition reactor or in a conventional

deposition reactor.

Brief Description of the Drawings

The above objects, other features and advantages of the present invention will

become more apparent by describing the preferred embodiments thereof with

reference to the accompanying drawings, in which:

Fig. 1 is an illustrative schematic view showing an example of an inner space

of a deposition reactor for preparing rod-shaped polycrystalline silicon according to

the present invention;

Figs. 2 - 7 are cross-sectional views schematically showing an illustrative arrangement of a first core means and a second core means in the deposition reactor

for preparing rod-shaped poly crystalline silicon according to the present invention;

Figs. 8 - 12 are cross-sectional views (a) and longitudinal sectional views (b)

showing the states that a silicon deposition output is formed outwardly on the

surface of the first core unit constituted by forming a separation layer on the surface

of a first core element according to the present invention, wherein:

Fig. 8 shows illustrative views schematically showing a cross-section (a) and a

longitudinal section (b) of the silicon rod in the course of forming the silicon

deposition output outwardly on the surface of the first core unit constituted by

forming one separation layer on the surface of the rod-shaped first core element

having a circular cross-section;

Fig. 9 shows illustrative views schematically showing a cross-section (a) and a

longitudinal section (b) of the silicon rod in the process of forming the silicon

forming two kinds of the separation layers on the surface of the rod-shaped first core

element having a circular cross-section;

Fig. 10 shows illustrative views schematically showing a cross-section (a) and

a longitudinal section (b) of the silicon rod in the course of forming the silicon

deposition output outwardly on the surface of the first core unit constituted by forming two kinds of the separation layers on the surface of the conduit-shaped or

tube-shaped first core element having a hollow, concentric rectangular cross-section;

Fig. 11 shows illustrative views schematically showing a cross-section (a) and

a longitudinal section (b) of the silicon rod in the process of forming the silicon

forming three kinds of the separation layers on the surface of the rod-shaped first

core element having a circular cross-section; and

Fig. 12 shows illustrative views schematically showing a cross-section (a) and

forming two different kinds of the separation layers on the surface of the strip- (or

ribbon-) shaped first core element having a rectangular cross-section.

Best Modes for Carrying Out the Invention

Reference will now be made in detail to a preferred embodiment of the

present invention, examples of which are illustrated in the accompanying drawings.

The present invention can be applied to all the deposition reactors used for

preparing polycrystalline silicon in the form of a rod regardless of a shape and

structure of the deposition reactor such as bell-jar type, a tube type or a chamber-type. Since the bell-jar type deposition reactor which is also referred to as

the Siemens reactor has most widely been used for commercial purpose, the present

invention will be described with reference to such bell-jar type deposition reactor

(hereinafter, referred to as "bell-jar type reactor") in this specification.

As shown in Fig. 1, the deposition reactor comprises a sealed inner space Ri,

formed by a shell Rs and a base unit Rb, and core means Cl and C2 consisting of one

core unit or a plurality of core units, installed in the inner space Ri.

The core units, mechanically fixed on respective electrode units, are

electrically connected to each other by electrode units El and E2. Electric power is

supplied to the electrode units El and E2 through electric power transmitting means

Tl and T2 from the electric power supply sources Vl and V2 installed outside of the

shell Rs and the base unit Rb.

In a small, laboratory-scale deposition reactor, a core means consists of only

one or a small number of core units, and each core unit is connected to a pair of

electrode units at its both ends. Otherwise, in a deposition reactor used for a

large-scale commercial production of polycrystalline silicon, the core means consists

of several tens to several hundreds of core units, which have conventionally been the

same with each other in material or shape.

The keywords and descriptions in the present invention are based on the following definitions: the "core means" indicates a group of one or a plurality of

"core units" constituting a substrate that is the starting point of the formation of the

silicon deposition output caused by a deposition reaction; and each core unit is

composed of, constituted by, or fabricated from the material to be represented by the

"core element".

And, since a plurality of identically grouped core units can be connected

electrically to each other in series and/ or in parallel, and the silicon deposition can

occur almost in the same manner on the identically grouped core units, the

operation method and a phenomenon or a characteristic observed on an individual

core unit may be collectively described in terms of a "core means" representing a

group of the core units which are identically grouped in the present invention.

Once the core means Cl and C2 are heated above the temperature required

for silicon deposition and the reaction gas Gf is supplied into the inner space Ri, the

silicon deposition initially starts on surfaces of the core means Cl and C2. Then,

silicon deposition outputs Dl, D2 are formed in an outward direction of the core

means Cl and C2, respectively, with polycrystalline silicon being ultimately

prepared in the form of a rod. In this process, each core unit behaves as a structural

frame of the respective unit of the polycrystalline silicon rod to be obtained by the

reactor operation. Unlike the conventional manner in which a plurality of core means Cl, C2

installed in an inner space of the deposition reactor is made of one kind of material

selected from silicon material or non-silicon material, a special feature of the present

invention is that the core means are composed of two or more different kinds of core

means in constituting an electrical heating means within the deposition reactor,

together with the electrode units; i.e., there exist at least two kinds of core means

such as the first core means Cl representing a group of the first core units consisting

respectively of a core element made of a non-silicon, resistive material, and the

second core means C2 representing a group of the second core units consisting

respectively of a core element made of silicon-based material.

In the present invention, a particular importance is given to a different

grouping of the core means, for example, Cl and C2, on the basis of the material

difference between the core elements constituting the respective core units.

According to the grouping in the present invention, the non-silicon, resistive core

material constituting the first core unit is electrically heated initially, and what

naturally follows is the preheating of one or a plurality of the silicon material-based

second core units installed around a previously electrically heated first core unit,

where the preheating occurs mainly by radiation heat transfer. Following the

naturally occurring preheating step, the resistivity of silicon itself becomes sufficiently lowered with the increase of temperature such that electrical (resistive)

heating of the second core units can be started with moderate electrical conditions,

hence allowing its rapid heat-up.

Meanwhile, two or more different kinds of non-silicon, resistive materials

with different electrical properties can also be applied to the present invention. Then

the resistive material-based core means can further be divided into a plurality of the

first core means; for example, the first core means can be divided into two groups of

core means, i.e., Ia core means and Ib core means, when two different resistive

materials are applied for constructing the non-silicon core means. In this case, after

supplying electricity to heat simultaneously or sequentially the Ia core means and

the Ib core means, a plurality of the silicon-based second core units installed around

the electrically heated Ia core means and Ib core means should be naturally

preheated mainly through radiation heat transfer mechanism. By the preheating

step as described above, the resitivity of silicon becomes lowered sufficiently so that

the second core means could be electrically heated easily and rapidly.

Hereinafter the present invention will be described in more detail on the basis

of a representative specific case in which the first core means Cl representing the

overall group of the first core units consisting of the respective core elements made

of a non-silicon, resistive material and the second core means C2 representing the overall group of the second core units consisting of the respective core elements

made of high-purity silicon material are installed together in the inner space Ri of

the deposition reactor. Here, the high-purity silicon material means an intrinsic

silicon or a doped silicon containing an artificially added dopant, in either of which

the concentration of harmful impurity components is controlled to be less than an

allowable range.

The core units constituting the first and second core means, Cl and C2, are

electrically connected and mechanically fixed to the first and second electrode units

constituting the first and second core means, El and E2, respectively, with an

individual core unit being connected to a pair of electrode units.

In the present invention, the resistive material-based first core means Cl and the

corresponding first electrode means El constitutes the first electrical heating means

in the deposition reactor. Thus, the first core means can be electrically heated easily

and rapidly from the room temperature to a required temperature for preheating the

second core means by introducing an electric current into them at a moderate

potential difference. Here the electric power is supplied from the first electric power

supply source Vl, installed outside the deposition reactor, to the first electrode

means El via the first electric power transmitting means Tl.

On the other hand, the silicon-based second core means C2 and the corresponding second electrode means El constitutes the second electrical heating

means in the deposition reactor. Here the electric power is supplied from the second

electric power supply source V2, installed outside the deposition reactor, to the

second electrode means E2 via the second electric power transmitting means T2.

At room temperature, the resistivity of high-purity silicon is so high that the

material cannot be electrically heated unless an extraordinarily high potential

difference is applied at its both ends. This causes a great difficulty in electrically

heating the second core means C2 consisting of a plurality of the second core units

using a common electric power supply source without preheating the second core

means above a certain temperature range. For starting the heating operation of the

deposition reactor from room temperature according to the present invention, it is

required to electrically heat the first core means Cl in advance without supplying

electric power to the second core means C2. Being located near and around the first

core means Cl electrically heated in advance, the second core means C2 becomes

subject to natural preheating and to subsequent rise in temperature without electric

supply.

On the other hand, there can be an alterative method for preheating the

mixed core means Cl and C2. After being heated sufficiently to a high temperature,

a high-temperature inert gas without containing a reaction gas or silicon-containing component may be supplied into the inner space Ri of the deposition reactor

through a gas supply means Nf or an additional gas supply means for heating up

the first core means Cl and/ or the second core means C2. However, by utilizing

such a high-temperature inert gas alone as a heating medium without electricity, it is

practically impossible to heat up within an allowable time period the mixed core

means, especially the second core means, installed in a large-volume commercial

reactor to a predetermined preheating temperature in the range of from about 350 -

400 ⁰C, at which the resistivity of silicon becomes sufficiently lowered below 2 - 5

ohm-cm, to 1,000 ⁰C, at which silicon exhibits a sufficiently conductive, resistive

property.

As suggested in the present invention, if the second core means C2 is

preheated to a temperature in the range of about 350 - 1,000 °C through the prior

electrical heating of the first core means Cl, an electric current can flow in the second

core means C2 without much difficulty, thus enabling the start of an electrical

resistive heating of the second core means C2. Here, the higher the preheating

temperature is, the easier the second core means becomes electrically heated at a

lower potential difference (voltage).

In the process of preheating the second core means C2 through the prior

electrical heating of the first core means Cl as described above, no special constraint is imposed on pressure in the inner space. Instead at a high vacuum, requiring much

more sophisticated set up, the preheating can be executed at a normal pressure.

Otherwise, the pressure may be selected in advance in the range of 1-20 bar absolute

where the operation of silicon deposition will be executed. And it is preferred to

execute the preheating of the second core means C2 under an atmosphere selected

from the group consisting of hydrogen, nitrogen, argon, helium and a mixture

thereof. The gas selected for maintaining the atmosphere may be introduced into the

inner space through the gas supply means Nf or an additional gas supply means. In

this case, the gas flow rate may preferably be set in such a range that the core means

Cl, C2 not be cooled down.

Considering that the higher the hotter temperature is, the more the radiation

heat transfer between two solid surfaces with different temperatures, the preheating

of the second core means C2 is initiated and maintained by radiation heat transfer

from the first core means Cl electrically heated in advance, and then temperature

rise in the second core means becomes also influenced by radiation between the

adjacent units themselves of the second core means C2 with the lapse of the

preheating process.

When the temperature T(Cl) of the first core means Cl is controlled high

enough to achieve the temperature T(C2) of the preheated second core means C2 to be in the range of 350 - 1,000 ⁰C, it is desirable to select and adjust an appropriate

temperature difference [ΔT = T(Cl) - T(C2)] between the two core means by

controlling an electrical heating of the first core means (Cl), considering that an

electrical heating of the second core means C2 can be started more easily at a higher

preheating temperature T(C2).

In the present invention, it is preferred that the first core means Cl is

electrically heated in the range of 400 - 3,000 ⁰C during the process of preheating the

second core means C2. During the process the temperature difference ΔT between

the first core means Cl and the second core means C2 is desirably maintained in the

range of 50 - 2,650 ⁰C.

If ΔT < 50 ⁰C and T(Cl) < 400 ⁰C, it is practically impossible to preheat the

second core means C2 to a temperature of T(C2) = 350 ⁰C. On the other hand, once a

temperature T(Cl) of the first core means is maintained above 3,000 ⁰C in order to

increase the rate of radiation heating at an initial stage of the preheating process

with ΔT being above 2,700 ⁰C, the first core means Cl itself may be near its melting

point and the silicon material-based second core means C2, positioned adjacent to

and around the first core means, could highly possibly be melted down.

It does not matter if the second core means C2 is preheated to the range of

about 400 - 900 ⁰C for the resistivity of silicon to fall into a range of about 0.03 - 2 ohm-cm. The second core means C2 may more preferably be preheated to a

temperature in the range of 750 - 850 ⁰C, if accessible, at which the resistivity of

silicon becomes less than about 0.1 ohm-cm with its conductive characteristic being

more apparent. The preheating conditions as described above prevent a risk of

melting of the silicon core element, reduce the time required for the preheating

process, and then allow a start of the electrical heating of the second core means C2

at a moderate voltage. Such preheating conditions are obtainable by a prior electrical

heating of the first core means Cl to a temperature preferably in the range of 500 -

2,500 ⁰C, and more preferably in the range of 800 - 2,000 ⁰C.

In the preheating process according to the present invention, the surface

temperatures of the electrically heated first core means Cl and/ or the preheated

second core means C2 may somehow be maintained to be a little higher than the

reaction temperature for silicon deposition without causing a serious problem. For

example, in a case that reaction gas Gf composed of monosilane (SiH₄) as a

silicon-containing component is used as a raw material for the deposition reaction at

a temperature is in the range of about 650 - 800 ⁰C, the second core means C2 can be

preheated to a temperature somehow higher than a predetermined reaction

temperature and its electrical heating can be started thereafter without a problem.

Further, it is not difficult to control the electric power supplied to both of the two core means Cl, C2 in parallel with the supply of the reaction gas with the reaction

temperature being maintained as required.

After preheating the second core means C2 to a temperature T(C2) in the

range of 350 - 1,000 ⁰C for sufficiently lowering the resistivity of silicon as

described above, electricity can then be supplied to them at a moderate potential

difference from the second electric power supply source V2 through the second

electrode means E2. The second core means C2 thereby becomes electrically heated

so that its temperature could be regulated at a reaction temperature Tr representing

an allowable temperature range predetermined for maintaining the silicon

deposition reaction as required.

Here, several factors may affect the electrical heating of the second core

means C2 which electrically consists of interconnections of the second core units in

series and/ or parallel circuit. Besides an electrical characteristic such as the

resistivity of silicon, the configuration of the electrical circuit and the assembly

details of the deposition reactor, such as the number of the second core units

constituting the second core means C2, the contact resistance between an individual

core unit and its corresponding electrode unit, etc., determine how the electrical

heating should be performed for maintaining and controlling the temperature of the

second core means C2 at the level of Tr. On this account, in order to electrically heat the second core means C2 in an

allowable range of voltage and current, it is desirable to predetermine and optimize

detailed conditions for heating the mixed core means following the preliminary

experimental tests required: the final preheating temperature of the second core

means C2 may be optimized in the range of 350 - 1,000 ⁰C; the temperature of the

first core means Cl electrically heated in advance may be selected or changed with

time in the range of 400 - 1,000 ⁰C; and the temperature difference ΔT between the

two core means may be maintained constant or changed with time in an optimal

way by at least about 50 ⁰C or higher.

When the temperature T(C2) of the second core means C2 increases rapidly

by supplying electricity to it for electrical heating after completing the preheating

process, the first electric power supply source Vl and the second power electric

power supply source V2 are controlled to supply electricity as required to the

corresponding core means Cl and C2 so that the reaction temperature Tr can be

maintained constant or changed with time. The value of Tr may be predetermined in

the range of 650 - 1,300 ⁰C according to detailed deposition conditions such as

reaction gas composition and operation procedure.

In the present invention, the first core means Cl consists of one or a plurality

of first core units and the second core means C2 consists of one or a plurality of second core units, where each of the core units is connected to a pair of electrode

units. An electric power supply system for the reactor system may be constructed in

the manner that the core units represented by a core means are interconnected to

each other in series and/ or parallel circuits or a core unit be configured as an

independent electrical unit. For example, Fig. 1 illustrates an electric power supply

system, in which the first core means Cl consists of one first core unit and is

electrically connected to the first electric power supply source Vl via the first

electrode means El, i.e., a pair of the first electrode units El, while the second core

means C2 consists of two second core units connected to each other in series and is

electrically connected to the second electric power supply source V2 via the second

electrode means E2, i.e., two pairs of the second electrode units E2.

If the present invention is applied to the deposition reactor shown in Fig. 1,

the first core means Cl made of a resistive material and the second core means C2

made of silicon material are installed together in the inner space Ri of the deposition

reactor, where the first core means Cl is electrically heated first and the second core

means C2 is preheated by the radiation heat transfer from the electrically heated first

core means Cl. After completing the preheating process, the preheated second core

means C2 starts to be electrically heated by the supply of electricity, and then

preparation of a polycrystalline silicon rod can be initiated through a supply of reaction gas Gf.

Unlike the example of Fig. 1 consisting of a small number of core units,

there is a need to consider the fact that the core means consists of several tens to

hundreds of the core units, in general, when the present invention is applied to bulk

production of the rod-shaped polycrystalline silicon in commercial scale. In a

large-sized reactor shell Rs where a large number of core units can be installed, a

considerable temperature difference may possibly occur between the core units

according to the location of their installation, the construction of the electric circuit

for power supply and the operation conditions. The problem of temperature

difference between the core units can occur not only in the process of silicon

deposition but also in the whole process from the initial electrical heating of the first

core means Cl to the additional electrical heating of the preheated second core

means. Accordingly, there is a need to consider the possible existence of such a

temperature difference in the design and operation of the deposition reactor.

When the first core means Cl consists of a small number of the first core

units, the electrical heating of the whole first core means Cl can be started

simultaneously. Otherwise, when a large number of the first core units are installed,

the first core means Cl may be further divided into a plurality of the first core

groups such that the respective first core groups start to be electrically heated at different times predetermined according to the group. It is thereby possible to

reduce or prevent a problem due to a considerable temperature difference between

the first core units in the initial electrical heating and preheating processes.

When the second core means C2 consists of a large number of the second

core units, a considerable temperature difference between the second core units may

also be observed. Then, some differences may occur in the degree of preheating

among the second core units. Differently from the other second core units preheated

sufficiently as required, some of the second core units which are not preheated

enough may yield no apparent current therein in response to a predetermined

voltage imposed upon the corresponding pair of the second electrode units. This

deters the initiation of the electrical heating of the preheated second core means,

requiring an extension of the preheating process.

Also, when the second core means C2 consists of a small number of the

second core units, the electrical heating of the whole second core means C2 after the

preheating process can be started simultaneously. Otherwise, when a large number

of the second core units are installed, the second core means C2 may be further

divided into a plurality of the second core groups such that the respective second

core groups start to be electrically heated at different times predetermined according

to the group. In the present invention the supply of electricity to a number of the

preheated second core units can be arranged to start in groups such that the

electrical heating of the preheated second core means can proceed individually and

consecutively on the basis of the second core groups. Then, the preheating of a

second core group, which are so located as not to be preheated efficiently by the

surrounding, electrically heated first core units, can be effectively accelerated by an

additional radiation heat transfer from an another second core group which began to

be electrically heated earlier following its faster achievement of preheating. Such an

accelerated preheating process based on the individual and consecutive start of the

second core units in groups should lead to a faster start of the electrical heating of

the whole core means.

Once an electrical heating of the silicon-based second core unit is initiated

after its resistivity is sufficiently lowered by the preheating process, its temperature

rapidly rises to reach a deposition reaction temperature range due to its small

cross-sectional area. Therefore, in the present invention, there exists a negligible time

interval between the starting times when the respective second groups begin to be

electrically heated.

For differentiating the times for individual electrical heating operation and

control of the first core means Cl and/ or the second core means C2 by diving the respective core units in different groups, the following arrangements may be

accompanied: the electric power supply system needs to be composed of a number

of subdivided systems corresponding to the grouping of the core means allowing an

individual switching and/ or regulation of power supply in groups. Considering an

additional cost for the subdivided power supply system, it is desirable not to divide

the core means unnecessarily into a large number of core groups.

The core units and the corresponding electrode units can be arranged in a

regular array; the co-planar locations of the core units can have a bilateral symmetry

and/ or a vertical symmetry, as illustrated in Figures 2 to 7. Such arrangement can

influence the preheating of the second core means C2 remarkably. It is thus

important to take the number of those core groups and the spatial arrangement of

them into consideration for construction of the deposition reactor as well as the

electric power supply system according to the present invention.

When the present invention is applied to an existing, conventional

deposition reactor comprising an additional preheating means for preheating the

core means made of silicon material, it is desirable to determine the number and the

arrangement of the first core units constituting the first core means Cl after

considering the possible application of the additional preheating means in the

process of preheating the second core means C2. After installing the first and second core means Cl, C2 in the inner space Ri

of the deposition reactor as described above, it is desirable to carry out the process of

preheating the second means C2, which is mainly contributed by the previously

started electrical heating of the first core means Cl, under an atmosphere selected

from the group consisting of hydrogen, nitrogen, argon and helium. However, it is

also permissible to supply the reaction gas Gf to the inner space Ri during the

preheating process for silicon deposition on the surface(s) of the first core means Cl

and/ or the second core means C2. For example, once the second core means C2 is

considerably preheated to a temperature T(C2) of approximately above 500 - 600 ⁰C,

the reaction gas Gf can be supplied into the inner space Ri even prior to initiating an

electrical heating of the second core means C2, This means that a process of silicon

deposition can possibly start even in parallel with the process of preheating the

second core means C2, and the silicon deposition may begin mainly on the

high-temperature surface of the first core means Cl. However, if the temperature

T(C2) of the second core means is still low or the reaction gas Gf is introduced into

the inner space Ri without being sufficiently heated, the second core means C2 can

be cooled by the injection of the reaction gas Gf, and thereby the starting time of the

electrical heating of the second core means C2 may be delayed remarkably.

Therefore, the starting time of silicon deposition should be determined carefully if an early start of silicon deposition is considered.

For safer and more completed operation it is preferable to start the process of

silicon deposition after the initiation of an electrical heating of the second core means

C2 following the process of its preheating. It is more preferable to start the silicon

deposition by initiating the supply of reaction gas Gf to the inner space Ri with all

the temperatures of the first and second core means Cl, C2 being maintained stably

within an allowable range of the reaction temperature in accordance with the

corresponding adjustment of the first electric power supply source Vl and the

second electric power supply source V2.

The deposition reactor by the present invention comprises an electrical heating

means, which consists of the electrode means El and E2 and the corresponding core

means Cl and C2, and is required for supplying the electric energy required for the

process of silicon deposition. Here, the core means is divided into the first core

means Cl made of a resistive material and the second core means C2 made of a

silicon material. And, all the electrode units constituting the electrode means are

divided into the first electrode units represented by the first electrode means El and

the second electrode units represented by the second electrode means E2, both of

which are connected to the first core means Cl and the second core means C2,

respectively. The first and second electrode means El and E2 are electrically independent to each other. When the reaction gas Gf is supplied through one or a

plurality of the gas supply means Nf into the deposition reactor constituted as

described above, a polycrystalline silicon rod can be prepared by the silicon

deposition outward on the electrically independent core means Cl, C2 connected to

the electrode means El, E2, respectively.

Since the characteristics of heat transfer and heat loss of the core units

constituting the first and second core means Cl, C2 are somehow different from each

other according to the electric properties, the physical specifications and the

installation arrangement (coplanar layout) thereof, there can be observed a

temperature difference between the two core means Cl, C2.

In the bell-jar type deposition reactor for silicon deposition, it is more

reasonable for the reaction temperature Tr to represent a practically allowable range

of temperature rather than to limit a specific value of temperature. When the

reaction gas Gf is supplied into the reactor for the deposition process according to

the present invention, it is desirable to regulate the respective electric powers

supplied independently to the first and second core means Cl, C2 so as to maintain

the reaction temperature Tr in such a manner that a temperature difference between

the two core means Cl, C2 being maintained within the range of 0 - 200⁰C.

In the deposition process temperature influences many factors including but not limited to: a rate of silicon deposition; a characteristic of reaction; a cross-section

dimension of the deposition output formed outwardly on each core means, in other

words, the maximum diameters dl(t) and d2(t) of the deposition outputs formed

outwardly on the first and second core means, respectively (here, dl(t) is shown in

Fig. 8 to Fig. 12 illustrating various shapes of the longitudinal section and

cross-sections of the deposition output formed outward on a first core means); and

the rate of thickness increase. It is therefore desirable to minimize any kinds of

temperature difference not only between the core units constituting an individual

core means, but also between the two core means. If there exist a temperature

difference of greater than 200 ⁰C and a temperature distribution among the core

units included in the first and second core means Cl, C2 in the process of silicon

deposition, the difference between dl(t) and d2(t) increases with time passage. When

dl(t) or d2(t) of some or any one of the core units reaches a maximum, allowable

value, the deposition operation should be stopped although the other deposition

outputs are not formed sufficiently on the remaining core unit. This problem

ultimately causes a decrease in reactor productivity.

Accordingly, in the new design of a deposition reaction for carrying out the

present invention more effectively, the following aspects are to be reflected: the

preheating of the second core means C2 should be carried out effectively by the first core means Cl which is electrically heated in advance; and it is important to reduce

as much as possible the temperature difference and the temperature distribution,

which can be generated not only between the core means and but between the core

units constituting an individual core means in the process of silicon deposition.

To satisfy these aspects, the core units comprising each core means should be

appropriately arranged considering the specification or the characteristics of the

elements constituting of the deposition reactor such as: the shell Rs, the base unit Rb;

the gas supply means Gf; the gas outlet means No; a temperature measuring and

controlling system, etc. Also, a spatial change with time due to the growing of the

deposition output, a time-dependent pattern of gas flow within the inner space, a

cooling by the heat transfer through the reactor shell Rs, and the like can influence

the arrangement (spatial layout) of the core units.

In order to supply a controlled electric power duly to every core means, core

group or core unit, it is important to make use of a change of voltage-current

characteristics in the electric circuit to be controlled. However, since it is also

important to utilize a detected temperature for controlling the electric power supply

system, there is a need to design the deposition reactor such that one or a plurality of

non-contact type temperature measuring means, which is commercially available,

such as the pyrometer, a temperature-distribution measurement device and the like can be employed by installing at proper locations of the shell Rs and/ or the base

unit Rb.

Meanwhile, control parameters and procedure are normally predetermined

for each of the electric power supply sources Vl and V2 in order to control the

respective supplying of an electric power as required. The electric power supply

sources Vl, V2 supply well-controlled powers to the core means Cl, C2, respectively,

minimizing the temperature difference between the two core means within an

allowable reaction temperature range during the operation of the deposition reactor.

The electric power supply sources Vl, V2 for supplying electric powers to the

corresponding core means Cl, C2 through the corresponding electric power

transmitting means Tl, T2 can be constructed as two separate, independent electric

power supply systems, Vl-Tl-Cl and V2-T2-C2, as illustrated in Fig. 1. On the

contrary, the two electric power supply sources may possibly be integrated as a

combined, single apparatus, from which electric powers are supplied independently

to the core means Cl, C2 through the corresponding electric power transmitting

means Tl, T2. In the present invention, "an independent electric power supply"

means that a current or voltage can be adjusted and applied independently for each

of the core means, core groups or core units, irrespective of the configuration of the

electric power supply sources. Further, for each core means, the core units and the corresponding electrode

means can be electrically interconnected with each other in series and/ or parallel

circuits, after considering the number, the size and the electrical characteristic of the

core units constituting the corresponding core means. According to the electric

circuit formed for each core means, the values of voltage and current applied to an

individual core unit and the resistive heating power generated therein are

determined.

Following the basic characteristic of the present deposition reactor, a

cross-sectional size of the deposition output, that is, dl(t) and d2(t), increase with the

reaction time, t, of the deposition process, and differences in temperature and

physical shape between the silicon deposition outputs can be observed according to

an installation arrangement of the core units. Thus, in constructing and operating the

electrical power supply system for the deposition reactor, it is worthwhile to

consider that there may exists differences in the electrical properties between the

core units, the core groups or the core means, and that the electrical properties can

change with time.

In the present invention, it is permissible to select either a direct current or an

alternating current as the type of electricity to be supplied to the core means Cl and

C2. The deposition reactor according to the present invention, in which a silicon

deposition reaction for preparing the polycrystalline silicon in the form of a rod is

carried out is, composed of: the inner space Ri formed by the base unit Rb and the

shell Rb; the gas supply means Nf for supplying the reaction gas Gf to the inner

space Ri; the gas outlet means No for discharging an off-gas Go from the inner space

Ri; and the electrical heating means required for the silicon deposition reaction.

The overall electrical heating means consists of the electrode means and the

corresponding core means divided as the first core means Cl made of a resistive

material and the second core means C2 made of a silicon material. The electrode

means are divided into the first electrode unit means El composed of the first

electrode units and the second electrode means E2 composed of the second electrode

units. The first and second electrode means El and E2 are connected to the first core

means Cl and the second core means C2, respectively. Here it is remarkable that

the first electrode unit El and the second electrode unit E2 are electrically

independent from each other.

It is permissible to install the first electrode means El, E2 on either of the

shell Rs or the base unit Rb of the deposition reactor. However, since a weight (load)

of the silicon rod output exerted on the corresponding core means Cl, C2 and

electrode means El, E2 should increase continuously with the reaction time, it may be advantageous in a structural aspect to install the first and second electrode means

El, E2 on the base unit Rb when the shapes of the core units to be installed are

simple or linear as illustrated in Fig. 1. If the shape and the structure of a group of

core units are designed such that each core unit can withstand the weight of the

respective silicon rod outputs, it is permissible to install the electrode units El, E2 on

either or both of the shell Rs and the base unit Rb which are equipped with a cooling

means.

In the present invention, the electrode means El, E2 behave as electrical

connecting means enabling electricity to flow through the corresponding core units

constituting the core means Cl, C2. Here, the respective electrical powers are

supplied from the electric power supply sources Vl, V2, installed outside the

deposition reactor shell, through the electric power transmitting means Tl, T2,

respectively. Details of the electricity flowing through the electrode means are

determined according to the series and/ or parallel circuits constructed for an

individually predetermined electrical heating means.

A pair of electrode units connected to each core unit serve as the input and

output terminals of the single core unit. The construction of interconnections

between the electrode units or the electrical circuit structure of the whole electrode

units may be determined according to the installation arrangement, i.e., spatial layout of the core means Cl, C2 as well as the specifications predetermined for

constructing their corresponding electric power supply systems.

Various shapes of the electrode means employed in the conventional bell-jar

type reactor can be used in the present invention as they are. Each of the electrode

units, represented by an electrode means, may consist of all or part of the following

elements: (i) an electrode made of a metallic conductive material with a low

electrical resistance by which electrical self-heating is weak; (ii) an electrical coupling

unit or an electrical connecting unit which can interconnect mutually the electrode

and the corresponding electric power transmitting means Tl, T2 such as a cable, a

bar, a tube, a shaft, a conduit, a shaped article and the like for supplying an electric

power: (iii) a coupling support or a chuck made of a carbon-based material, which

electrically connects the core unit to the electrode or the electric power transmitting

means Tl, T2, with physically supporting each of the core units or fixing the

electrode; (iv) a cooling means for cooling the electrode or the coupling support with

a cooling medium such as gas, water, or oil and the like; (v) an insulating means

for electrically insulating the metallic material constituting the shell Rs or the base

Rb of the deposition reactor; and (vi) a part, a fitting and the like for coupling,

sealing, insulating and assembling the elements as described hereinabove for

constructing an individual electrode unit. The shape and dimension of the corresponding electrode units of the

electrode means El, E2 may be determined by considering a diameter of the silicon

rod to be finally manufactured, the number and installation arrangement of the core

units, a space available for installing all the required electrode units El, E2, and their

corresponding electric power transmitting means Tl, T2, and a cross-sectional area

of an electrode of the electrode unit by which electrical self-heating is weak. The

electrode units constituting either of the electrode means El, E2 and the

corresponding electric power transmitting means Tl, T2 may be installed

individually and then finally connected mechanically and electrically to each other.

However, it is also allowable to design, fabricate and preassemble a plurality of

electrode units and the corresponding electric power transmitting means as a more

simplified and integrated body. This may be achievable when a plurality of the

electric power transmitting means are integrated into a single, electrically

conductive electric power transmitting body as an example of the electrical

connecting means. Then, the integrated electric power transmitting body and the

corresponding electrode units can be fabricated or preassembled in a more

integrated, compact manner for convenient installation.

The coupling support and/ or the electrical coupling unit constituting an

electrode unit are generally made of a high-purity graphite material which can be easily fabricated. To prevent or reduce a carbon contamination of the silicon

deposition output a layer of a functional ceramic material, such as silicon carbide, is

often formed on the surface of such graphite-based elements. In assembly and

installation of the electrode units an electrical insulation should be secured between

such conductive elements and the metal-based shell Rs and/ or base unit Rb of the

deposition reactor.

During the reactor operation part of each electrode unit may be exposed to a

high temperature of the inner space Ri, by which the electrical insulating material or

the sealing material installed needs to be protected from a thermal degradation.

Accordingly, it is preferred to cool some area or the entire area of the base unit Rb,

the electrode made of a metal material, the insulating parts and the like by using a

circulated cooling medium.

In the present invention, the first and second electrode means El, E2

corresponding to the first and second core means Cl, C2, may be divided into one or

a plurality of the first and second electrode groups, respectively. Then it may be

possible to supply electricity independently to each of the first and/ or second

electrode groups. As a result, a plurality of core units represented by an individual

core means can be divided into a plurality of core groups in accordance with the

classification of the electrode groups. Then, as the case for an individual core means, a plurality of core groups constituting each of the core means can be electrically

connected to each other in series and/ or parallel circuits. According to such

connection scheme, the electric power transmitting means for electrical connections

of the corresponding electric power supply source to the electrode units as well as of

the electrode units to each other can be installed or assembled in the deposition

reactor and the corresponding electric power supply system.

The electric power transmitting means electrically connecting the electric

power supply source and the electrode units may be installed in, at or outside of the

shell Rs and the base unit Rb of the deposition reactor. Further, the electric power

transmitting means or the electrical connecting means used for interconnection of

the electrode units El, E2 can be installed at any locations, i.e., inside or outside the

reactor when an appropriate electrical insulation is secured against the metallic

material of the reactor. When installed at an outside of the deposition reactor, the

electric power transmitting means may comprise a commercially available

connecting means or a conductive metal such as a cable, a bar or a shaped body with

a small electric power loss.

In case when, following an appropriate electrical insulation, the electric

power transmission means or the electrical connecting means is installed within the

deposition reactor, for example, just above the base unit Rb for electrically connecting a plurality of electrode units El, E2, a body fabricated for that purpose by

machining a graphite material into a desired shape can be used on behalf of a metal

material. To prevent generation of impurity components or fine powders from itself,

the surface of the graphite-based conductive body may preferably be subject to a

physical and/ or chemical processing to form a functional ceramic layer, such as

silicon carbide layer.

The electric power transmitting means itself or the electrical connecting

means itself used to interconnect the electrode units can be regarded as an expanded

electrode unit because they have something in common in that the electricity flows

through such a large cross-sectional area as not to raise a remarkable resistance

heating. Accordingly, a plurality of electrode units El, E2, as well as the electric

power transmitting means or the electrical connecting means for interconnecting the

electrode units can be designed, fabricated and installed in the form of an integrated

single body or an assembly of multiple integrated components. This method greatly

reduces the space required for installing the electric power transmitting means Tl,

T2 for a plurality of electrode units installed above or below the base unit Rb,

precludes elements of electrical contact resistance due to the connections between

the electrode units and the corresponding electric power transmission means, allows

an easy and convenient assembling and dismantling of the reactor, and enhances reliability in terms of safety.

A scheme how to electrically connect the electrode groups for each of the first

and second core means Cl, C2 determines how to constitute the electric circuits of

the corresponding core groups as described above. If the electricity can be

independently supplied to each of the electrode groups, the respective starting time

of electrical heating can be set differently for each electrode group according to the

present invention. It is also possible for the voltage-current condition for each of the

core groups to be controlled differently to each other, if necessary.

The electric power supply system allowing an independent power supply to

each of the electrode groups can be constructed such that the groups are connected

electrically in series and/ or parallel circuits. Such an electrical scheme may be

determined based on the electric power required in each core unit, the installation

arrangement (spatial layout) and interconnection method of the electrode units, the

specification of the electric power supply source, and the like.

Basically, the electricity required for heating the first core means Cl is

independently supplied from the first electric power supply source Vl to the first

electrode unit El through the first electric power transmitting means Tl. Likewise,

the electricity required for heating the second core means is independently supplied

from the second electric power supply source V2 to the second electrode unit E2 through the second electric power transmitting means T2.

The first electric power supply source Vl and the second electric power

supply source V2 comprise respectively an electric power converting system having

a function for converting an input electricity with a high voltage-low current

characteristic into an output electricity with a low voltage-high current characteristic.

If necessary, a function for converting alternating current to direct current may also

be included in the respective electric power supply sources Vl, V2. They Vl, V2 can

be constructed as separate, individually installed electric power converting systems,

or can be constructed as a single, combined-type electric power converting system.

During the silicon deposition process the electrical heating of the respective

core units is subject to interdependencies between a current passing through the core

units and the silicon deposition outputs, an electric resistance of the conductive

materials, and a potential difference imposed between a pair of corresponding

electrode units. Based on the electricity characteristic it is possible to control with

time the rate of electrical heating of each core means, each core group or each core

unit. This can be achieved by the operation and control of the first and second

electric power supply source Vl, V2 as described above with either voltage or

current being selected as the control parameter.

Meanwhile, it may be possible that the first electric power supply sources Vl for one deposition reactor is assigned to another first core means Cl comprised in

another deposition reactors. In this case, one or a plurality of the first core means Cl

comprised in one or a plurality of deposition reactors, including the corresponding

first core groups, first core units and first electrode units, can be electrically

connected to each other by the corresponding electric power transmitting means Tl

in series and/ or parallel circuits based on a single electric power supply sources Vl.

It may also be possible that the second electric power supply sources V2 for one

deposition reactor is assigned to another second core means C2 comprised in

another deposition reactors. In this case, one or a plurality of the second core means

C2 comprised in one or a plurality of deposition reactors, including the

corresponding second core groups, second core units and second electrode units, can

be electrically connected to each other by the corresponding electric power

transmitting means T2 in series and/ or parallel circuits based on a single electric

power supply sources V2.

In the present invention the first core element used for each of the first core

units constituting the first core means Cl is made of a resistive material, such as a

metal-based or a carbon-based material, other than an intrinsic or doped silicon.

The first core means can have a shape selected from the group consisting of a

rod, a wire, a filament, a bar, a strip and a ribbon having a cross-sectional shape of a circle, an oval or a polygon (triangle, quadrangle, hexagon, octagon and the like),

concentric circle, a concentric oval or a concentric polygon.

It is preferred that the resistive material used for constituting the first core

means Cl has the resistivity value in the range of about 1 μohm-cm to several

ohms-cm.

In the preferred embodiment, the resistive material can be (i) a metal or an

alloy comprising at least one metal element selected from the group consisting of

tungsten (W), rhenium (Re), osmium (Os), tantalum (Ta), molybdenum (Mo),

(Rh), vanadium (V), chromium (Cr), zirconium (Zr), platinum (Pt), thorium (Th),

aluminum (Al) and a mixture thereof; (ii) a ceramic metal material containing at

least one component selected from the group consisting of molybdenum suicide

(Mo-Si), lanthanum chromium oxide (La-Cr-O), zirconia and a mixture thereof; or

(iii) a carbon-based material comprising at least one component selected from the

group consisting of amorphous carbon, graphite, silicon carbide (SiC) and a mixture

thereof. As described above, the resistive material used for constituting the first core

means Cl can be selected from a wide range of materials. Besides possessing excellent electrical properties for use in the present

invention, the first core element needs preferably to be selected among high-purity

materials comprising organic or inorganic impurity components as less as possible.

This can lead to a minimized impurity contamination of the first deposition output

Dl formed outwardly on the core element.

It is also preferred that the first core units constituting the first core means Cl

be heat-treated at a temperature in the range of 400 - 3,000 ⁰C. The heat treatment

under an atmosphere of high-purity helium, nitrogen, argon or helium may remove

or chemically convert residual impurity components. This work can be carried out in

the step of fabricating the first core units or prior to the silicon deposition. It does not

matter if the above heat treatment is carried out through the electrical heating of

themselves after installation in the deposition reactor used in the present invention

or in a conventional deposition reactor available by the prior art.

On the other hand, the second core units constituting the second core means

C2 can be made of a silicon material selected from the group consisting of intrinsic

polycrystalline silicon, intrinsic single crystalline silicon, doped silicon, containing

n-type or p-type dopant, and a mixture thereof.

Like the first core means Cl, the second core means C2 can have a shape

selected from the group consisting of a rod, a wire, a filament, a bar, a strip and a ribbon having a cross-sectional shape of a circle, an oval or a polygon (triangle,

quadrangle, hexagon, octagon and the like), and of a conduit, a tube, a cylinder, and

a duct having a cross-sectional shape of a concentric circle, a concentric oval or a

concentric polygon.

In the present invention, although being dependent on that of the

silicon-based core unit at an early stage of silicon deposition, a cross-sectional shape

of a poly crystalline silicon rod is progressively transformed into a rather circular or

oval shape with its size (i.e., thickness) being enlarged with deposition time.

The shapes of the core means Cl, C2, in terms of the cross-sections of the

corresponding core elements, can be selected among those satisfying the commercial

availability of the element materials, a possibility of fabrication, their forming or

fabrication costs, the installation arrangement (i.e., co-planar layout) of the electrode

means and the core means, etc. Although all the core units constituting both of the

core means Cl, C2 may have an identical cross-sectional shape, their shapes may

also be different to each other. Furthermore, either of the core means Cl, C2 may be

composed of differently shaped core groups or core units. Fig. 4 and Fig. 6 illustrate

the differently shaped core means and/ or core groups.

The rod-shaped core units having a circular cross-section can generally be

selected for constituting the corresponding core means Cl, C2. Instead, all or part of the red-shaped core units may be replaced by either of the strip (or ribbon)-shaped

core units or by the tube-shaped hollow core units. In any case, an appropriate

fabrication of the corresponding electrode units El, E2 is required such that stable

installation of the core units and their electrical contact with corresponding

electrodes can be secured irrespective of the shape of cross-section.

As in the conventional bell-jar type reactor, the dimensions of the core means

Cl, C2 which can be used in the present invention can be selected in terms of their

cross-sections as follows: an apparent diameter of a circular cross-section may be in

the range of about 3-30 mm, while a longest, diagonal length and a shortest length

being in the range of about 5-100 mm and 0.5 - 6 mm, respectively. Meanwhile, the

longitudinal lengths of two core means can preferably be selected such that they

both can be installed at nearly the same heights.

What determines an individual dimension of the core means Cl, C2 other

than the cross-sectional thickness and the longitudinal height is a spacing between a

pair of vertically installed core elements constituting a single core unit. The spacing

corresponds to a layout pitch between IA-I and IA-I' or 2A-1 and 2A-1' as

illustrated in Fig. 2, that is, a spacing between the adjacent centers of a pair of

electrode units constituting and supporting a single core unit. In the case of the

core element having a circular cross-section, it is preferable, in general, for the spacing (i.e., layout pitch) to be in the range of about 1.2 - 1.8 times of an average

diameter of a silicon rod product to be manufactured.

On the other hand, the core units need to be installed as many as possible in

the inner space Ri of the deposition reactor so that reaction yield and productivity

could be enhanced according to an increased surface area for silicon deposition

enhance, and a maximum number of the silicon rod products with a predetermined

size could be manufactured therein. For this purpose, it is preferred that the spacing

between the adjacent core units, based on a shortest spacing between two vertical

core elements of different core means, be in the range of about 1.2 - 2.4 times of an

average diameter of a silicon rod product to be manufactured.

In order to substantially increase the reactor productivity and the positive

effects of the present invention, it is important to optimize a co-planar layout, i.e.,

installation arrangement of the core units and the corresponding electrode units

such that the core units and the corresponding electrode units can be installed as

many as possible on the base unit Rb. A classified installation of the core means Cl,

C2, the corresponding respective core groups and the corresponding core units can

be possible satisfying the optimized installation arrangement,.

In constructing the electric power supply system for an independent control

of power supply to respective core means Cl, C2, core groups and core units in the present invention, an electric circuit and a sequence of current flow can be

established according to the installation arrangement of the core units and the

electrode units as well as to connection schematics for their series-parallel

combination. Here, either of a series or a parallel connection may be applied to the

electrical connection of the core units, if the required voltage-current condition is

satisfied for every core unit or the corresponding electrode units.

However, if all the core units are connected in parallel to each other, a voltage

applied to every core unit becomes very low, and hence there occurs a problem that

a very high electric current should be provided. Otherwise, if too many core units

are connected to each other in series, the potential difference between an inlet

terminal and an outlet terminal of the circuit is very high, thereby resulting in a low

electric current for every core unit.

The number of the core units connected to each other in series depends on the

dimension of the core unit and its electrical properties. To prevent such a high

potential difference exceeding the range of about 100 - 200 V, the electric power

supply system needs to be constructed by properly combining both of the series and

parallel connections of the core units.

Meanwhile, based on a longitudinal direction of a core unit, a piece of core

element can be formed in a straight line-shape, U-shape, W-shape and the like, and its both ends can be fixed to and installed on a pair of corresponding electrode units.

For example, as illustrated for the first core means Cl in Fig. 1, the core units can be

installed such that a U-shaped (hereinafter, referred to as the "single body type")

core unit Cl is well fixed to a pair of corresponding electrode units El. Also, as

illustrated for the second core means Cl in Fig. 1, a pair of vertical core element

parts and a horizontal core element part serving as a bridge connecting both upper

ends of the vertical parts are assembled together to form an electrically connected

core unit C2 (hereinafter, referred as the "assembled type"), which is well fixed to a

pair of corresponding electrode units E2.

The core units constituting an individual core means can be prepared by

directly forming a single core element like a single body type (U-shape) core unit, or

a plurality of core element parts can be connected to each other to form the single

body type (U-shape) core unit. These methods can be applied mainly for preparing

the first core units constituting and represented by the first core means Cl as

illustrated in Fig. 1. Either of the methods can hardly be employed for preparing the

second core units constituting and represented by the second means Cl, because the

core element parts made of a silicon material should be connected to each other

under a high-purity atmosphere by means of a plasma/ arc welding by which it is

practically difficult to form the U-shaped single body. In the case of the assembled type core unit where a core unit for each of the

two core means Cl, C2 consists of a plurality of straight line-shape core element

parts, two vertical core element parts, which are mounted vertically on a pair of

corresponding electrode units El, E2, should be physically and electrically connected

with the horizontal core element part serving as a bridge. This can be executed by: (i)

mechanically processing a connecting portion of the core element parts; (ii) welding

or connecting the connecting portion by using a welding means or plasma/ arc; (iii)

connecting the core element parts using a connection fitting or coupling aid such as

a wire-shaped coupling material; or (iv) applying aforementioned methods in a

combined manner.

The above method for preparing the assembled type core units can be applied

to all of the first and second core units, and it is desirable for the vertical and

horizontal core element parts to have the same material and same cross-sectional

dimension. However, there exists no problem in carrying out the present invention

even though the vertical and horizontal core element parts are made of different

materials and have different dimensions with each other. For example, if the second

core unit is constituted as the assembled type core unit using a pair of vertical core

element parts made of silicon, a silicon material having cross-sectional shape and

area similar to those of the vertical core element parts may be used for preparing the horizontal core element part serving as the bridge. Also, instead of using a

silicon-based bridge, it does not matter whether or not to use a non-silicon, resistive

material with cross-sectional shape and area different from those of the vertical core

element parts.

In preparing the assembled type second core means C2 with the horizontal

core element part being made of the resistive material applicable to the first core

means Cl, it is preferred to determine its physical specification, including a

cross-sectional dimension, a length and the like, considering its

temperature-dependent electrical properties. It is further more preferable to fabricate

both ends of the vertical core element parts such that they can be coupled well with

for the horizontal core element part.

Once reaction gas Gf is supplied into the inner space Ri of the deposition

reactor, silicon deposition occurs to form the first deposition output Dl and/ or the

second deposition output D2 in an outward direction of the first core means Cl

and/ or the second core means C2, respectively, according to the present invention.

Here, the "outward direction" means a direction which is perpendicular to

the surface of a core unit, that is, a thickness direction or a radial direction of its

cross-section. When silicon deposition proceeds according to the operation silicon

deposition, a diameter or a diagonal length of each of the deposition outputs Dl and D2 increases gradually, and thereby a polycrystalline silicon rod product of a

desired size is finally formed within the reactor.

The reaction gas Gf, which can be used in the present invention, contains at

least one silicon-containing component selected from the group consisting of

monosilane (SiH4), dichlorosilane (S1H2CI2), trichlorosilane (SiHCb), silicon

tetrachloride (SiCk) and a mixture thereof. Pyrolysis and/ or hydrogen reduction of

the silicon-containing component leads to silicon deposition that forms the silicon

deposition output.

Although being composed of only the silicon-containing component for

preparing the rod-shaped polycrystalline silicon, the reaction gas Gf may further

contain at least one gas component selected from the group consisting of hydrogen

(H2), nitrogen (N2), argon (Ar), helium (He), hydrogen chloride (HCl), and a mixture

thereof to control the characteristic of the deposition reaction and the composition of

an off-gas Go.

For preferred silicon deposition to occur on the surfaces of the first and

second deposition outputs Dl, D2, it is preferred that the silicon deposition occurs in

the inner space Ri of the deposition reactor at a reaction pressure in the range of 1-20

bar absolute and a reaction temperature in the range of 650 - 1,300 ^°C based on the

surface temperature of the first deposition output Dl and/ or the second deposition output D2.

If the reaction pressure is less than 1 bar absolute, the deposition rate of

silicon on the deposition outputs Dl, D2 and the reactor productivity becomes

unfavorably low. Otherwise, the higher the reaction pressure is, the more

advantageous the deposition reactor is in the aspect of productivity. This

characteristic is more prominent especially when trichlorosilane is selected as the

silicon-containing component than the case of monosilane. However, if the reaction

pressure is maintained at a level exceeding 20 bar to remarkably increase the reactor

productivity, serious problems are encountered as follows: the fabrication cost of the

deposition reactor itself as well as the subsidiary units in connection with the reactor

becomes excessive; it becomes more difficult to secure process safety; and the feed

rate (moles/ hr) of the raw material becomes too high for the surface temperatures of

the deposition outputs Dl, D2 to be maintained within an allowable reaction

temperature range by the electrical heating of the core means Cl, C2.

Based on convenience and reliability in temperature measurement and

considering the facts that silicon should be continuously deposited on the surfaces of

the deposition outputs in an outward direction of the core means Cl, C2, and surface

temperatures are different according to the installed locations of the deposition

outputs Dl, D2 in the inner space Ri, it is preferred that a temperature of the surface of the deposition outputs Dl, D2 is regarded as a standard of the reaction

temperature.

Although a reaction temperature varies according to the composition of

reaction gas Gf to be used, the rate of silicon deposition is significantly low or

negligible at a temperature less than 650 ⁰C with the reactor productivity being

unfavorably low. Otherwise, the deposition rate increases with reaction temperature.

However, at temperatures exceeding 1,300 ^°C, the content of a component that

cannot be recycled increases excessively in the off -gas Go. Also, the temperature of

central parts of the core means Cl, C2, that is, the temperature of the core elements

exceeding 1,400 ^°C may cause a collapse of the silicon rod during the deposition

process, and an enormous heat loss through the reactor shell Rs. Therefore, it is

recommended to set the reaction temperature representing an allowable

temperature range for silicon deposition within the range of 650 - 1,300 °C,

considering the conditions such as compositions of the reaction gas Gf and the

off-gas Go, pressure, silicon deposition rate, energy efficiency and the like.

In a batchwise process for preparing rod-shaped polycrystalline silicon

according to the present invention, diameters and surface areas of the deposition

outputs Dl, D2, a heat load of the core means Cl, C2, a heat loss through the shell Rs

of the deposition reactor increase with operating time. It is then desirable to predetermine the operation conditions such as the feed rate and composition of the

reaction gas Gf, the reaction temperature, the reaction pressure, the electric power

supply and the like. It is also important to optimize the above conditions by

changing them with operating time.

In the process of preheating the second core means C2 by the first core means

Cl electrically heated in advance according to the present invention, there may

possibly be a contamination of the silicon-based second core means C2 due to the

resistive material constituting the first core means Cl spaced apart from the second

core means C2. Here it is required to remark following: the preheating process

according to the present invention is carried out at a normal or high pressure, i.e., in

a non-vacuum condition; the temperature of the first core means Cl is less than

about 3,000 ^°C, i.e., the temperature is less than the melting point of the resistive

material; an ion with a high energy can hardly exist in the inner space. Then an

evaporation of impurity components or a sputtering can hardly occur at the surface

of an appropriately heat-treated first core element, which is believed not to

deteriorate the purity of the second core element and ultimately the second

deposition output.

Compared with the second deposition output D2, on the other hand, the first

deposition output Dl formed outwardly on the first core element made of a resistive material has a relatively high risk of contamination caused by the impurity

components contained in the resistive material. Therefore, according to the present

invention based on in a mixed core means, a solar-grade polycrystalline silicon to be

used for solar cells can be formed in the first deposition output Dl, and an

electronic-grade polycrystalline silicon to be used for semiconductor devices is

formed in the second deposition output D2. Instead of a simultaneous preparation of

the two grades of polycrystalline silicon in the same deposition reactor, only one

kind of polycrystalline silicon to be used for either solar cells or semiconductor

devices can be prepared by forming the first and second deposition outputs Dl, D2.

Once the process for silicon deposition is sufficiently carried out according to

the present invention, a diameter or diagonal length of the silicon rod reaches a

maximum allowable value and the deposition operation is halted before a deposition

output becomes in contact with another adjacent deposition output. Thereafter, the

reactor is dismantled and the deposition output rods are collected.

In order to enhance the quality of the first deposition output Dl formed in an

outward direction of the first core element CIa, it is preferred that the first core

means Cl according to the present invention is constituted by forming one or a

plurality of separation layer(s) CIb, CIb', CIb" on the surface of the first core

element CIa made of a resistive material (see Fig. 8 to Fig. 12) This makes it possible to prevent the first deposition output Dl from being contaminated by the

components contained in the first core element CIa or to minimize the possibility of

the contamination of the first deposition output Dl. If the first core unit can be

constituted by forming the separating layer CIb on the surface of the first core

element CIa, it is possible to prepare high-purity silicon deposition outputs Dl, D2,

which can be used for the solar cells and/ or the semiconductor devices, on both of

the first and second core means Cl, C2 according to the present invention.

In the conventional silicon deposition reactor only one kind of the core means

has been selected between the resistive material-based first core means Cl and the

silicon-based second core means C2. However, according to the present invention, as

illustrated in Fig. 8 to Fig. 12, the first core means Cl constituted by forming the

separation layer CIb on the first core element CIa is installed in the deposition

reactor together with the second core means C2 made of silicon material; the second

core means C2 is preheated by the first core means Cl which is electrically heated in

advance; an electrical heating of the preheated second core means C2 is then

initiated to form the silicon deposition outputs Dl, D2 outwardly on the core means

Cl, C2, respectively; and finally a rod-shaped high-purity polycrystalline silicon can

be prepared.

Accordingly, the separation layer CIb formed on the surface of the first core element CIa serves as a substrate on which a formation of the first deposition output

Dl is initiated, and prevents a diffusion of the impurity components from the first

core elements CIa to the first deposition output Dl during the deposition process.

The separation layer CIb differs from the polycrystalline silicon formed in the first

deposition output Dl in its martial kind, structure and physical properties. Thus, the

separation layer can be easily separated from the first deposition output Dl after the

preparation of the silicon rod outputs is completed.

The separation layer CIb can consist of one layer or a plurality of layers. If

the number of the layers exceeds 5, a lot of time, labor and cost for forming the

separation layer CIb are required, deteriorating the economical advantage of the

present invention. Accordingly, the number of the separation layer(s) is preferably

in the range of 1 to 5, i.e_v it is recommended that the separation layer CIb consists of

five kinds of layers or less.

The separation layer CIb according to the present invention has a function of

a diffusion barrier for preventing the diffusion of a specific component or element

between two metallic contact areas at high temperature. Here, the barrier component

constituting each layer of the separation layer(s) CIb can be selected from (i) silicon

nitride, silicon oxide, silicon carbide or silicon oxynitride or (ii) a nitride, an oxide, a

silicide, a carbide, an oxynitride or an oxysilicide comprising at least one metal element selected from the group consisting of tungsten (W), rhenium (Re), osmium

(Os), tantalum (Ta), molybdenum (Mo), niobium (Nb), iridium (Ir), ruthenium (Ru),

technetium (Tc), hafnium (Hf), rhodium (Rh), vanadium (V), chromium (Cr),

zirconium (Zr), platinum (Pt), thorium (Th), lanthanum (La), titanium (Ti), lutetium

(Lu), yttrium (Y), and a mixture thereof.

A barrier component constituting the separation layer CIb according to the

present invention comprises a substance consisting of a nitride of silicon or an

element selected from metals constituting the first core element CIa, such a nitride

can comprise a single component nitride such as Si-N, W-N, Os-N, Ta-N, Mo-N,

Nb-N, Ir-N, Ru-N, Tc-N, Hf-N, Rh-N, V-N, Cr-N, Zr-N, Pt-N, Th-N, Ti-N, Lu-N, Y-N

and the like and a mixed metal nitride such as W-V-N, Ti-Si-N, Ti-C-N, Hf-Ta-Mo-N

and the like.

Most of such nitride-based components have a melting point of 2,000⁰C or

higher, where other physical properties of such nitride-based components differ

from those of the first core element CIa or the first deposition output Dl. Such

nitride-based components can combine with metal impurity ions of the first core

element CIa, which enables such nitride-based components to be used for forming

the separation layer CIb. However, there is little possibility of contaminating the

first deposition output Dl with nitrogen component of the nitride-based the separation layer CIb at a high reaction temperature, and so the nitride-based

separation layer can be used for forming one or a plurality of separation layer(s) CIb

and can constitute the first core means Cl, together with the oxide-based,

oxynitride-based., carbide-based, silicide-based or oxysilicide-based separation layer

CIb.

A barrier component constituting the separation layer CIb according to the

present invention comprises a substance consisting of an oxynitride of silicon or an

element selected from metals constituting the first core element CIa, where such an

oxynitride can comprise a single component oxnitride such as Si-O-N, W-O-N,

Os-O-N, Ta-O-N, Mo-O-N, Nb-O-N, Ir-O-N, Ru-O-N, Tc-O-N, Hf-O-N, Rh-O-N,

V-O-N, Cr-O-N, Zr-O-N, Pt-O-N, Th-O-N, Ti-O-N, Lu-O-N, Y-O-N and the like, and

a mixed metal oxynitride such as Si-Al-O-N, Hf-Zr-O-N, Mo-W-O-N, V-Mo-W-O-N

and the like.

Most of such oxynitride-based components have a melting point of 2,000 ^°C or

higher, where other physical properties of such oxynitride-based components differ

from those of the first core element CIa or the first deposition output Dl, and such

oxynitride-based components can combine with metal impurity ions of the first core

element CIa, which enables such oxynitride-based components to be used for

forming the separation layer CIb. However, there is little possibility of contaminating the first deposition output Dl with nitrogen component of the

oxynitride-based the separation layer CIb, at a high reaction temperature, and so the

oxynitride-based separation layer can be used for forming one or a plurality of

separation layer(s) CIb and can constitute the first core means Cl together with the

nitride-based, oxide-based, carbide-based, silicide-based or oxysilicide-based

separation layer CIb.

A barrier component constituting the separation layer CIb according to the

present invention comprises a substance consisting of an oxide of silicon or an

oxide can comprise a single component oxide such as Si-O, W-O, Ta-O, Nb-O, Hf-O,

Zr-O, Ti-O and the like, and mixed metal oxide such as W-V-O, Ti-Si-O, Sr-Ti-O,

Sr-Ti-Nb-O, Sr-La-Al-O, La-Mn-O, Sr-Hf-O, Nb-Ta-O, Ba-Zr-O, Ba-Mo-O, Ba-Ce-O,

Ba-Ti-O, Ca-Ti-O, Sr-Zr-O, Sr-Mn-O, Hf-Ta-Mo-O, Y-Zr-O and the like.

Most of such oxide-based components have a melting point of 1,420 "C or

higher, where other physical properties of such oxide-based components differ from

those of the first core element CIa or the first deposition output Dl which enables

such oxide-based components to be combined with metal impurity ions of the first

core element CIa, and so such oxide-based components can be used for forming the

separation layer CIb. However, there is little possibility of contaminating the first deposition output Dl with oxygen component of the oxide-based the separation

layer CIb at a high reaction temperature, and so the oxide-based separation layer

can be used for forming one or a plurality of separation layer(s) CIb and can

constitute the first core means Cl together with the nitride-based, oxynitride-based,

carbide-based, silicide-based or oxysilicide-based separation layer CIb.

A barrier component constituting the separation layer CIb according to the

present invention comprises a substance consisting of a carbide of silicon or an

element selected from metals constituting the first core element CIa, where such a

carbide can comprise a single component carbide such as Si-C, W-C, Os-C, Ta-C,

Mo-C, Nb-C, Ir-C, Ru-C, Tc-C, Hf-C, Rh-C, V-C, Cr-C, Zr-C, Pt-C, Th-C, Ti-C, Lu-C,

Y-C and the like, a mixed metal carbide such as Si-W-C, Ta-Hf-C, Si-Ti-C and the like,

and the transition metal carbon nitride such as W-C-N, Ta-C-N, Zr-C-N, Ti-C-N and

the like.

Most of such carbide-based components have a melting point of 2,000 ^°C or

higher, where other physical properties of such carbide-based components differ

carbide-based components can combine with metal impurity ions of the first core

element CIa, which enables such carbide-based components to be used for forming

the separation layer CIb. However, there is a possibility of contaminating the first deposition output Dl with a carbon component of the carbide-based the separation

layer CIb at a high reaction temperature, and so it is also desirable to isolate the first

deposition layer Dl with the nitride-based oxynitride-based, silicide-based, or

oxysilicide-based separation layer CIb, rather than applying in the form of a single

separation layer CIb.

A barrier component constituting the separation layer CIb according to the

present invention comprises a substance consisting of a suicide of silicon or an

suicide can comprise a single component silicide such as W-Si, Os-Si, Ta-Si, Mo-Si,

Nb-Si, Ir-Si, Ru-Si, Tc-Si, Hf-Si, Rh-Si, V-Si, Cr-Si, Zr-Si, Pt-Si, Th-Si, Ti-Si, Lu-Si, Y-Si

and the like, mixed metal silicide such as W-V-Si, W-Ti-Si-N, Ti-Zr-Si-C, Hf-Ta-Si-N

and the like, and such silicide based component can comprises oxysilicide obtained

by adding oxygen element to a silicide mentioned above.

Content of component can be adjusted in a way that such silicide-based or

oxysilicide-based components have a melting point of 1,420 ^°C or higher, the physical

properties of such silicide-based or oxysilicide-based components differ from those

of the first core element CIa or the first deposition output Dl and that such

silicide-based or oxysilicide-based components can combine with metal impurity

ions of the first core element CIa, and so such silicide-based or oxysilicide-based components can be used for forming one or a plurality of the separation layers CIb.

The silicide-based or oxysilicide-based separation layer can form the first core means

Cl together with the nitride-based, oxide-based, oxynitride-based, or carbide-based

separation layer CIb.

As described above, a barrier component constituting the separation layer

CIb can comprise a boron-containing component having an excellent physical

property such as a nitride, an oxide, a carbide or an oxynitride. Since there is a

possibility of contaminating the first deposition output Dl with a boron component

in the boron-based the separation layer CIb at a high reaction temperature, the first

core element CIa should be isolated perfectly from the first deposition layer Dl with

the nitride-based oxynitride-based, silicide-based, or oxysilicide-based separation

layer CIb rather than applying in the form of a single separation layer CIb.

According to the present invention, to constitute the first core means Cl by

forming the separation layer Ib on the surface of the first core element CIa can be

performed in a variety of methods.

As an example to form the separation layer Cl, the first core means Cl can be

constituted by surrounding the surface of the first core element CIa with a plurality

of separation layer constituting units made of a barrier component as described

above. In case the separation layer CIb is formed by the method of assembling the

separation layer constituting units as the above, the barrier those units need to be

prepared by manufacturing the preassembled units made of the barrier component

at predetermined size, shape and number and/ or by coating a barrier component to

each of the preassembled units or. Then, the first core element CIa surrounded the

separation layer CIb can be completed by assembling in layers or appropriately

connecting or forming the preassembled separation layer constituting units. This

method is especially suitable for a case when an assembled type first core unit is

constructed by assembling a plurality of first core element units. Consisting of one or

a plurality of separation layer (s) CIb having the barrier component in a thickness

direction, each of the separation layer constituting units may be independently

prepared in advance with a cross-sectional shape of a circle, a polygon, a concentric

circle or a concentric polygon shape in cross-section. The first core unit can now be

constructed by assembling in layers, connecting in a concentric way the first core

element together with the thus prepared the separation layer constituting units.

According to this method, a tiny space can exist between the surface of the first core

element CIa and the separation layer, between the separation layers or between the

separation layer constituting units. However, if any, the existence of the tiny space

does not exert an adverse effect on the formation of the deposition output in an outward direction of the core element pursuant to the present invention.

Unlike the above, the separation layer CIb is formed by coating the barrier

component on the surface of the first core element CIa. The direct coating of each of

the selected barrier components may be applied on its surface in a predetermined

thickness. If the direct coating manner as described above is applied, the separation

layer CIb consisting of a plurality of layers can be formed in sequence even within

the same coating device or can be formed in a number of separate coating devices.

According to this method, a separation layer required can be densely formed, and an

occurrence of a tiny space between the surface of the first core element CIa and the

separation layer or between the separation layers is less probable. No problem is

exerted on the formation of the deposition output.

On the other hand, by combining the scheme of applying the separation layer

constituting units to the core element and the scheme of applying the direct coating

method as described above, it is also possible to constitute the first core means Cl by

forming the separation layer on the core element.

Part of the separation layer(s) or the entire separation layer(s) CIb can be

formed on the surface of the first core element CIa in another kind of reactor or a

special coating device according to the present invention. Otherwise, the same work

can also be formed in a deposition reactor; the work can also be carried out in the inner space Ri of the silicon deposition reactor used in the present invention or of an

existing conventional deposition reactor available. In this case, one or a plurality of

the first core elements CIa are installed on the corresponding electrode units of the

deposition reactor, they becomes heated upon supplying electricity through the

electrode units; then a raw material gas is supplied into the inner space of the

deposition reactor to form the separation layer CIb on the surface of the first core

element CIa; and a completed set of the first core means Cl is finally obtained.

It is also possible to perform the separation layer forming process by use of

both the deposition reactor and the other kind of coating device(s) in sequence; for

example, after forming part of the separation layer in a special coating device, it is

possible to additionally form the remaining part of the separation layer CIb in the

deposition reactor pursuant to the present invention or in the existing conventional

deposition reactor. In this case, one or a plurality of the uncompleted first core

elements CIa are installed on the corresponding electrode units of the deposition

reactor, they becomes heated upon supplying electricity through the electrode units;

then a raw material gas is supplied into the inner space of the deposition reactor to

additionally form the remaining part of the separation layer CIb on the surface of

the uncompleted first core elements CIa; and a completed set of the first core units

represented by the first core mean Cl is finally obtained. In the process of forming the separation layer CIb consisting of a single layer

or a plurality of layers according to the present invention, a method for forming the

separation layer can be selected from a number of well-established coating methods

such as: (i) physical vapor deposition method (including sputtering deposition

method, pulsed laser deposition method, ion injection method and ion plating

method, etc.); (ii) chemical vapor deposition method (including normal pressure

chemical vapor deposition method, metallic organic chemical vapor deposition

method, plasma-enhanced chemical vapor deposition method, etc.); (iii) melt spray

coating method (including various kinds of spray methods and aerosol deposition

method); (iv) thermo-reactive deposition and diffusion method (including molten

salt method and powder method); and (v) sol-gel method and solution method.

The thickness of the individual separation layer CIb formed on the surface of

the first core element CIa for forming the first core means Cl according of the

present invention depends on such factors as the type of or the material of the of the

first core element CIa, the characteristic of impurity components, the barrier

component constituting the separation layer and the method for forming the

separation layer, etc. The thickness of the individual separation layer may be in the

range of several nanometers (ran) to several millimeters (mm).

In general, the thicker separation layer is believed to more faithfully prevent the diffusion of impurity components from the first core element CIa to the first

deposition output Dl. However, the separation layer CIb thicker than about 20 mm

would impose an excessive cost burden and an unnecessarily large temperature

gradient along the separation layer CIb, which makes it very difficult to maintain

the temperature of the surface of the first deposition output Dl as required.

Meanwhile it is also possible to employ here an advanced technology which has

recently been developed and used for forming an atomic layer or thin film with a

thickness of several nanometers (ran). Such a thin layer with a thickness of 10 nm or

less formed by the sophisticated method may also prevent the diffusion of the

impurity components. However, considering the dimension of a structural defect

often detected on the surface of the first core element CIa and the separation layer

CIb and an actual roughness dimension of the interface between the first core

element and the separation layer, the thickness of the separation layer CIb should be

greater than 10 nm. Accordingly, the overall thickness of the separating layer(s) CIb

formed on the first core element CIa of the first core means Cl should preferably be

in the range of 10 nm - 20 mm in the present invention.

The separation layer(s) CIb may have either an electric conductivity or

insulation property. This requires a careful consideration of an electrical

characteristic of the outermost separation layer CIb of the first core means Cl when it is connected and fixed to the corresponding, highly conductive electrode units. If

the separation layer CIb constituting the first core means Cl has an excellent electric

conductivity, it does not matter if the first core element CIa is in contact with the

electrode units through the separation layer CIb. However, in a case where the

separation layer CIb contains a barrier component with an electric insulation

property, the separation layer should not be formed at both ends of the first core

unit, and thus the conductive electrode units contact directly with the resistive first

core element instead of the separation layer that causes a serious contact resistance.

During migration from the first core element CIa to the first deposition

output Dl, the impurity components can react well or combine with silicon atom.

Thus, it does not matter if the separation layer CIb further comprises a silicon

separation layer containing silicon as a barrier component to constitute the first core

means Cl. To prevent the first deposition output Dl from being contaminated by the

impurity components the silicon separation layer can be placed between the first

core element CIa and the separation layer CIb, between the separation layers CIb or

at the outmost of the separation layer CIb. In this case, it is preferable for the

thickness of the added silicon layer to be in the range of 1 βn - 10 mm. If its

thickness is less than 1 μm, the barrier which can prevent an impurity contamination

becomes insufficient. However, when the thickness is greater than 10 mm, the barrier becomes unnecessarily large and requires serious sacrifices in various aspects

such as the cost and productivity of the reactor. Regarding the silicon separation

layer CIb containing silicon as the barrier component, it does not matter if the

separation layer CIb comprises the silicon separation layer CIb which is formed by

using the reaction gas Gf as the raw material gas. Here, the formation of the silicon

separation layer CIb needs to be optimized in terms of crystal structure and the

characteristic of thermal expansion such that the silicon deposition output Dl can be

easily separated from the silicon separation layer.

Accordingly, part of the separation layer(s) or the entire separation layer(s)

CIb the barrier component and/ or silicon can be formed on the surface of the first

core element CIa in a deposition reactor according to the present invention, or in an

existing conventional deposition reactor constructed by the prior art. The same work

can also be executed by using a special coating device, a thin layer forming

apparatus or another kind of reactor.

Regardless of whether the separation layer is formed on the surface of the

core element CIa or not, it is preferable to perform an heat treatment at a

temperature in the range of 400 - 3,000 ^°C to remove or to chemically convert the

residual impurity components during the process of preparing the first core unit

used in the present invention, before/ after machining the core element Ca, or before/ after or during the formation of the separation layer or before the operation

of silicon deposition. And, it is preferable for the heat treatment of the first core unit

or the first core element to be performed at a vacuum pressure or under the gaseous

atmosphere such as hydrogen, nitrogen, argon or helium and the like. The heat

treatment can be performed in the deposition reactor used in the present invention,

the existing conventional deposition reactor constructed by the prior art, or in a

special heat treatment or coating device.

The separation layer CIb formed on the first core element CIa according to the

present invention does not have an adverse effect on the role of the first core means

as an important means for preheating the second core means. Otherwise, the

separation layer CIb can prevent or intercept the diffusion of the impurity

components from the first core element to the silicon deposition output Dl in the

process of silicon deposition at a high temperature. This leads to the preparation of

high-purity poly crystalline silicon by using the first core means.

As described above, once the electrical heating of both the first and second

core means is initiated, the silicon deposition outputs are formed in an outward

direction of the core means through a supply of the reaction gas. This process of

silicon deposition is substantially the same as that in the conventional deposition

reactor. In order to use the polycrystalline silicon outputs manufactured according

to the present invention as the raw material preparing polycrystalline- or single

crystalline ingot, block, sheet or film, there is no need to separate the core means and

the deposition output from each other for the case of the second deposition output

formed outwardly on the second core means Cl. Contrary to the case of the second

deposition output, it is inevitably necessary for the case of the first deposition output

to separate the first core element and/ or the separation layer CIb out of the first

deposition output Dl formed outwardly on the first core means Cl. Following the

present invention, the first core element CIa, the separation layer CIb and the first

deposition output Dl are different to each other from the aspect of a composition, a

crystal structure or a physical characteristic. Therefore, it is not so difficult to

separate and collect the first deposition output Dl from the rod-shaped

polycrystalline silicon obtained by the present invention. In such separation process,

the first core element CIa or the separation layer CIb can be subject to a damage or

breakage. However, if the separation layer forming process is carried out in an

optimum condition, it is possible to recover the first core element CIa and/ or the

separation layer CIb as it is and to recycle them for a repeated use.

The polycrystalline silicon output prepared by the present invention can be

processed into a cylindrical or hexahedral shape in accordance with the required size and then packaged. Also, the polycrystalline silicon output can be pulverized

further into a chunk, nugget, chips or particle shaped silicon product. If necessary,

the product is cleaned further and dried to remove the impurity components out of

the surface thereof contaminated in the pulverizing process.

The product processed into a cylindrical shape can be used for single crystal

growth according to the floating zone method. The pulverized product having

irregular shapes and various sizes may be melted in a crucible and then formed into

a single crystalline or polycrystalline ingot, block, sheet or film shaped article.

The basic characteristics and the usage of the present invention will be

described in detail as follows, with reference to Figs. 2 - 7 which are the plane views

schematically showing an arrangement of the first core unit and the second unit in

plane. However, the present invention is not limited thereto.

First Embodiment

Fig. 2 is a plane view schematically showing an installation arrangement in

which 8 sets in total of the rod or the wire shaped core units having a circular

cross-section are installed in the deposition reactor.

In this example, the first core means Cl consists of 4 sets of the first core units,

where the first core units IA-1, 1A-2, IB-I and 1B-2 are divided into two first core groups, the core units IA-I and 1A-2 are referred to as the first core group-A, and

the core units IB-I and 1B-2 are referred to as the first core group-B.

On the other hand, the second core means C2 also consists of 4 sets of the

second core units, where the second core units 2A-1, 2A-2, 2B-1 and 2B-2 are divided

into two second core groups, the core units 2A-1 and 2A-2 are referred to as the

second core group- A, and the core units 2B-1 and 2B-2 are referred to as the second

core group-B.

The electrode units corresponding to the core units constituting each of the

core groups are connected to each other in series and the core groups constituting

each of the core means are connected to each other in parallel. Thus the electric

power supply system is constituted such that the corresponding core means Cl, C2

are electrically connected to the electric power supply sources Vl, V2, respectively.

To operate the deposition reactor constituted as described above, the electric

power is supplied to the first electrical heating means consisting of the first core

means Cl and the first electrode means El corresponding to the first core units, the

electric current flows along the path of IA-I → IA-I' → 1A-2 → lA-2¹ in the first core

group- A, and the electric current flows also along the path of IB-I → IB-I' → 1B-2 →

1B-2¹. Once the first core means Cl starts to be electrically heated, the second core

units placed around the adjacent first core units start to be naturally preheated thereby.

As illustrated in Fig. 2, excluding a space required for installing gas nozzles

used for supplying and exhausting gas, the core groups and the core units are

disposed in a space such that the preheating of the second core means C2 can be

performed most effectively by the first core means Cl which is being electrically

heated. That is, the core groups and the core units are disposed such that the

second core unit 2A-1 can be easily preheated by the first core units IB-I and 1B-2,

the second core unit 2B-1 can be easily preheated by the first core units IA-I and

1A-2, the second core unit 2A-2 can be easily preheated by the first core units IA-I

and IB-I, and the second core unit 2B-2 can be easily preheated by the first core

units 1A-2 and 1B-2.

When being preheated as high as possible to a temperature in the range of 350

- 1,000 ⁰C, the second core means C2 is ready for an electrical heating under a

moderate voltage. Once an electrical heating of the second core group- A and the

second core group-B is initiated, the electric current flows along the path of 2 A-I →

2A-1¹ → 2A-2 → 2A-2¹ and the path of 2B-1 → 2B-1¹ → 2B-2 → 2B-2¹, respectively.

The temperatures of two core means Cl and C2 can be maintained in the required

reaction temperature range by controlling the supply of electric power to every core

means and every core group. According to the succeeding deposition process, the silicon rods are formed

on two core means Cl, C2, and Fig. 2 shows a cross-sectional shape of the

corresponding deposition outputs, exampled for only two core units, at the time

when the size of a silicon rod output reaches a target value and the deposition

reaction on the first deposition output Dl and the second deposition output D2 is

terminated.

Here, as illustrated in the drawing, the core means, groups, units and the

corresponding electrode means, groups and units require to be disposed in optimum

positions such that the preheating of the second core means C2 can be effectively

performed at any position in the inner space of the reactor, the silicon deposition

outputs Dl, D2 can be uniformly grown to a target dimension, and thereby the

productivity of the reactor can be maximized.

Second Embodiment

Fig. 3 is a plane view schematically showing another installation arrangement

in which 8 sets in total of the rod or the wire shaped core units having a circular

cross-section are installed in the deposition reactor, and the number of the first core

units differ from that of the second core units.

In this example, the first core means Cl consists of 3 sets of the first core units, where the first core units IA-I to 1A-3 are disposed as a single core group.

On the other hand, the second core means C2 consists of 5 sets of the second

core units, where the second core units 2A-1 to 2A-5 are also disposed as a single

core group.

The electrode units corresponding to the core units for each of the core means

Cl, C2 are electrically connected to each other in series, and independently

connected to the corresponding electric power supply sources Vl, V2, respectively,

to constitute the electric power supply system.

To operate the deposition reactor constituted as described above, the electric

means Cl and the electrode means El corresponding to the first core units, the

electric current flows along the path of IA-I → IA-I¹ → 1A-2 → 1A-2¹ → 1A-3 →

1A-3'. Once the first core means Cl starts to be electrically heated, the second core

units placed around the adjacent first core units start to be naturally preheated

thereby.

As illustrated in Fig. 3, excluding a space required for installing gas nozzles

used for supplying and exhausting gas, the core groups and the core units are

disposed in a space such that the preheating of the second core means C2 can be

performed most effectively by the first core means Cl which is being electrically heated. That is, the core groups and the core units are disposed such that the

second core unit 2A-1 can be mainly preheated by the first core units 1 A-2 and 1A-3,

the second core unit 2A-2 can be mainly preheated by the first core unit 1A-3, the

second core unit 2A-3 can be mainly preheated by the first core units IA-I and 1 A~3,

the second core unit 2A-4 can be mainly preheated by the first core unit IA-I, and

the second core unit 2A-5 can be mainly preheated by the first core units IA-I and

1A-2.

When being preheated as high as possible to a temperature in the range of

350-1,000 ⁰C, the second core means C2 is ready for an electrical heating under a

moderate voltage. Once an electrical heating of the second core means C2 is initiated,

the electric current flows along the path of 2A-1 → 2A-1¹ → 2A-2 → 2A-2'→ 2A-3 →

2A-3¹ → 2A-4 → 2A-4¹ → 2A-5 → 2A-5¹ in the second core means C2. The

temperatures of two core means Cl and C2 can be maintained in the required

reaction temperature range by controlling a supply of electric power to every core

means.

As described above, although the number of the first core units differs from

that of the second core units, the preheating of the second core means C2 can be

effectively performed at any position in the inner space of the reactor, and so an

electrical heating of the second core means C2 can be easily initiated. Also by supplying a reaction gas Gf with the temperatures of two core means Cl and C2

being maintained in the required reaction temperature range by controlling the

supply of electric power to every core means, the silicon deposition outputs Dl, D2

can. be uniformly grown to a target dimension, and thereby the productivity of the

reactor can be maximized.

Third Embodiment

Fig. 4 is a plane view schematically showing a case where 12 sets in total of

the core units are installed in the deposition reactor, and the core means Cl, C2

consist of different number of core groups and core units to each other.

In this embodiment, the first core means Cl consists of 4 sets of the

rod-shaped first core units having a circular cross-section, where the first core units

IA-I to 1A-4 are disposed as single core group.

On the other hand, the second core means C2 consists of 8 sets of the second

core units, which are classified into two second core groups: the second core

group-A consisting of the rod-shaped core units 2A-1, 2A-2, 2A-3 and 2A-4 which

have a circular cross-section; and the second core group-B consisting of the rod or

ribbon shaped core units 2B-1, 2b-2, 2B-3 and 2B-4 which have a rectangular

cross-section. The electrode units corresponding to the core units constituting each of the

core groups are connected to each other in series, and the second core group-A and

the second core group-B are connected to each other in parallel, and so the electric

To operate the deposition reactor constituted as described above, the electric

means Cl and the first electrode means El corresponding to each first core units, the

electric current flows along the path of IA-I → IA-I¹ → 1A-2 → 1A-2' → 1A-3 →

1A~3'→ 1A-4 — > 1A-4¹, and so the first core means Cl starts to be electrically heated

and the second core units placed around the adjacent first core units start to be

naturally preheated thereby.

As illustrated in Fig. 4, excluding a space required for installing gas nozzles

used for supplying and exhausting gas, the core groups and the core units are

disposed in a bilaterally/ vertically symmetric manner such that the preheating of

the second core means C2 can be performed most effectively by the first core means

Cl that is being electrically heated. For example, the core groups and the core units

are disposed such that the second core unit 2A-1 can be mainly preheated by the first

core unit 1A-2, the second core unit 2A-2 can be mainly preheated by the first core units IA-1, 1A-2 ad 1A-3, the second core unit 2B-2 can be mainly preheated by the

first core units 1 A-2 and 1B-3 and the second core unit 2B-1 can be mainly preheated

by the first core units 1A-3 and 1A-4.

When being preheated as high as possible to a temperature in the range of 350

moderate voltage. Once an electrical heating of the second core groups A and B is

initiated, the electric current flows along the path of 2 A-I → 2 A-I¹ → 2 A-2 → 2 A-2¹

→ 2A-3 → 2A-3¹ → 2A-4 → 2A-4¹ and along the path of 2B-1 → 2B-1¹ → 2B-2 → 2B-2¹

→ 2B-3 — » 2B-3¹ → 2B-4 → 2B-4¹, respectively. The temperatures of two core means

Cl and C2 can be maintained in the required reaction temperature range by

controlling the supply of electric power to every core means and every core group.

At this time, although it is permissible to electrically heat the second core

group-A and the second core group-B simultaneously, it does not matter whether an

electrical heating of the second core group-A is first initiated, if its preheating is

achieved more rapidly. Then, the preheating of the second core group-B can be

accelerated by the first core means and the second core group-A, which are being

electrically heated in advance. Thereby, the electrical heating of the second core

group-B can be initiated earlier.

According to the succeeding deposition process, where the silicon rods are formed on two core means Cl, C2, Fig. 4 shows a cross-sectional shape of the

corresponding deposition outputs, exampled for only three core units, at the time

when the size of a silicon rod output reaches a target value, and the deposition

terminated.

As described above, although the respective numbers of the core groups and

core units constituting the core means Cl, C2 and the cross-sections of the respective

core elements are different to each other, the preheating of the second core means C2

can be effectively performed at any position in the inner space of the reactor, and so

its electrical heating can initiate simultaneously or in sequence. Through the

preheating process, the silicon deposition outputs Dl, D2 can be uniformly grown to

a target dimension, and thereby the productivity of the reactor can be maximized.

Fourth Embodiment

Fig. 5 is a plane view schematically showing a case, where 16 sets of the core

units having a circular cross-section are installed in the deposition reactor, and the

core means Cl, C2 consist of different number of core groups and core units to each

other.

In this embodiment, the first core means Cl consists of 4 sets of the rod-shaped first core units, where the first core units IA-I to 1A-4 are disposed as

single core group.

On the other hand, the second core means C2 consists of 12 sets of the

rod-shaped second core units, which are classified into two second core groups: the

second core group-A consisting of the core units 2A-1, 2A-2, 2A-3, 2A-4, 2A-5 and

2A-6; and the second core group-B consisting of the core units 2B-1, 2B-2, 2B-3, 2B-4,

2B-5 and 2B-6.

The electrode units corresponding to the core units constituting each of the

To operate the deposition reactor constituted as described above, once the

electric power is supplied to the first electrical heating means consisting of the first

core means Cl and the electrode means El corresponding to each first core units, the

lA-3'→lA-4 → 1A-4¹, and so the first core means Cl starts to be electrically heated

naturally preheated thereby. As illustrated in Fig. 5, excluding a space required for installing gas nozzles

used for supplying and exhausting gas, the core groups and the core units are

the second core means C2 can be performed effectively by the first core means Cl

which is being electrically heated. However, compared with the second core

group-B, the installation arrangement is less beneficial to the second core group-A

with respect to the preheating by the first core means Cl. For example, the core units

of the second core group-B are disposed in parallel with the first core units in

parallel, being preheated easily by an adjacent pair of vertical sections of the

respective first core units which is electrically heated in advance. However, the

core units of the second core group-A are disposed somehow perpendicular to and

more distantly positioned from the first core units such that the preheating of these

core units could be more belated.

When being preheated as high as possible to a temperature in the range of 350

- 1,000 ⁰C, the second core group-B is ready for an electrical heating under a

moderate voltage. Once an electrical heating of the second core group B is initiated,

the electric current flows along the path of 2B-1 → 2B-1' → 2B-2 → 2B-2' → 2B-3 →

2B-3¹ → 2B-4 → 2B-4¹ → 2B-5 → 2B-5¹ → 2B-6 → 2B-6¹. In this case the core units of

the second group-A is preheated not only by the adjacent first core units but also by the adjacent second core units constituting the second core group~B, and thereby the

preheating of the second group-A can be completed more rapidly and its electrical

heating can be initiated earlier.

As described above, after all the core units in the deposition reactor start to

be electrically heated in sequence, the temperatures of two core means Cl, C2 can be

maintained in the required reaction temperature range by controlling the supply of

electric power to every core means and every core group.

Although the number of the first core units and the second core units differ

from each other and the second core groups are disposed in a different preheating

environment as described above, the electrical heating of the second core means C2

can start in sequence. Also by supplying a reaction gas Gf with the temperatures of

two core means Cl and C2 being maintained in the required reaction temperature

range by controlling the supply of electric power to every core means, the silicon

deposition outputs Dl, D2 can be uniformly grown to a target dimension, and

thereby the productivity of the reactor can be maximized.

Fifth Embodiment

Fig. 6 is a plane view schematically showing a case, where 12 sets in total of

the core units are installed in the deposition reactor, and the core means Cl, C2 consist of different cross-sectional shapes and different number of core units to each

other.

In this embodiment, the first core means Cl consists of 4 sets of the conduit or

tube shape first core units having an concentric (hollow) rectangular cross-section,

where the first core units IA-I to 1A-4 are disposed as a single core group.

On the other hand, the second core means C2 consists of 8 sets of the ribbon

or strip shape second core units having a rectangular cross-section, where the second

core units 2A-1 to 2A-8 are also disposed as single core group.

The electrode units corresponding to the core units constituting each of the

core means Cl, C2 are connected to each other in series, and so the electric power

supply system is constituted such that the corresponding core means Cl, C2 are

electrically connected to the electric power supply sources Vl, V2, respectively.

To operate the deposition reactor constituted as described above, the electric

means Cl and the electrode means El corresponding to each first core units, the

lA-3'→ 1A-4 —> 1A-4', and so the first core means Cl starts to be electrically heated

naturally preheated thereby. As illustrated in Fig. 6, excluding a space required for installing gas nozzles

used for supplying and exhausting gas, the core groups and the core units are

Cl that is being electrically heated. For example, the second core units 2A-1 and

2A-2 can be mainly preheated by an adjacent parts of the first core units IA-I and

1 A-4 and those of the first core unit IA-I, respectively.

When being preheated as high as possible to a temperature in the range of 350

the electric current flows through the core units 2A-1 to 2A-7 in order, and the

temperatures of two core means Cl and C2 can be maintained in the required

reaction temperature range by controlling the supply of electric power for every core

means.

According to the succeeding deposition process, two differently dimensioned

silicon rods are obtained, where the deposition outputs Dl, D2 with a similar

thickness are formed on two core means Cl, C2, respectively. Fig. 6 illustrates the

cross-sectional shapes of the deposition outputs at a time when the size of a silicon

rod output reaches a target value and the deposition reaction is terminated. As described above, although the number and the cross-sectional shapes of

the first core units and the second core units differ from each other, the preheating of

the second core means C2 is effectively carried out at any location in the inner space

of the reactor, and thus the electrical heating of the second core mean C2 can be also

easily initiated. Also by supplying a reaction gas Gf with the temperatures of two

core means Cl and Cl being maintained in the required reaction temperature range

by controlling the supply of electric power to every core means, the silicon

deposition outputs Dl, D2 can be uniformly grown to a target dimension, and

thereby the productivity of the reactor can be maximized.

Sixth Embodiment

Fig. 7 is the first quadrant of a plane view when 36 sets in total of core units

having an identical circular cross-section are installed in the deposition reactor

which has a larger diameter than that of the reactor illustrated in Fig. 5. Here, the

core means Cl, C2 respectively consists of the core groups and the core units which

differ from each other in the number.

In this reactor, the first core means Cl consists of 16 sets of rod-shaped first

core units, where the first core units are classified into two first core groups: the first

core group-A consisting of core units IA-I to 1A-8; and the first core group-B consisting of core units IB-I to 1B-8. Fig. 7 illustrates only the quarter portion of the

core units comprised in the first core group-A corresponding to the first quadrant.

On the other hand, the second core means C2 consists of 20 sets of the

rod-shaped second core units, where the second core units are classified into four

second core groups: the second core group-Al consisting of the core units 2A-1 to

2A-4; the second core group-A2 consisting of the core units 2A-5 to 2A-8; the

second core group-Bl consisting of the core units 2B-1 to 2B-6; and the second core

group-B2 consisting of the core units 2B-7 to 2B-12. Fig. 7 illustrates only the quarter

portion of the core units comprised in the second core group-Al and the second core

group-Bl corresponding to the first quadrant.

The electrode units corresponding to the core units constituting each of the

core groups are connected to each other in series, and the first core groups-A and -B

and the second core group-Al, -A2, -Bl and -B2 are connected to each other in

parallel, and so the electric power supply system is constituted such that the

corresponding core means Cl, C2 are electrically connected to the electric power

supply sources Vl, V2, respectively.

To operate the deposition reactor constituted as described above, the electric

means Cl and the electrode means El corresponding to each first core units, the electric current flows along the path of IA-I to 1A-8 in the first core group-A and

also flows along the path of IB-I to 1B-8 in the first core group-B and so the first core

means Cl starts to be electrically heated and the second core units placed around the

adjacent first core units start to be naturally preheated thereby.

Here, the electrical heating of the first core means Cl may be started either in

a simultaneous manner or in sequence according to the first core groups.

As illustrated in Fig. 7, excluding a space required for installing gas nozzles

used for supplying and exhausting gas, the core groups and the core units are

Cl that is electrically heated. However, compared with the second core groups-Bl

and -B2, the installation arrangement is less beneficial to the second core groups-Al

and -A2 with respect to the preheating by the first core means Cl. For example, the

second core units such as 2B-2 or 2B-3 constituting the second core groups-Bl and

-B2 are disposed adjacent to and in parallel with the first core unit which is

electrically heated in advance. However, although the core units constituting the

second core groups-Al and -A2 are disposed adjacent to the first core unit, these

core units are disposed such that they are preheated with more difficulty than the

second core groups-Bl and -B2, and thus the preheating of the second core groups-Al and -A2 can possibly be somehow belated than the second core

groups-Bl and -B2.

When the second core groups-Bl and -B2 are preheated as high as possible in

the temperature range of 350 - 1,000 ⁰C, these second core groups become ready for

an electrical heating under a moderate voltage. Upon initiating the supply of

electricity to them, the electric current flows in the corresponding groups along the

path of the second core units 2B-1 to 2B-6 in order, and also flows along another path

of the second core units 2B-7 to 2B-12 in order. Then, the preheating of the second

core groups-Al and -A2 can be accelerated by the contribution of the adjacent

second core units constituting the second core groups-Bl and -B2 in addition to the

neighboring first core units. According to the sequential heating scheme, the

preheating of the second core groups-Al and -A2 can be completed more rapidly,

and the start of there electrical heating can be accelerated thereby. Upon initiating

the supply of electricity to them, the electric current flows in the corresponding

groups along the path of the second core units 2 A-I to 2A-4 in order and also flow

along another path of the second core units 2A-5 to 2A-8 in order.

As described above, after all the core units in the deposition reactor start to

maintained in the required reaction temperature range by controlling the supply of electric power to every core means and every core group.

If the degree of preheating is not apparent between the second groups in the

preheating process, the entire second core means C2, that is, the electrical heating of

the entire second core groups may be initiated at the same time.

Although the number of the first core units and the second core units differ

two core means Cl and C2 being maintained in the required reaction temperature

deposition outputs Dl, D2 can be uniformly grown to a target dimension,

maximizing the productivity of the reactor.

Seventh embodiment

Figs- 8 - 12 are illustrative views schematically showing the states that the

silicon deposition output Dl is formed according to the present invention; these

drawings show schematically cross-sectional views (a) and longitudinal sectional

views (b) that can be observed by cutting the silicon rod outputs in the directions of

diameter and length, respectively. As shown in each drawing, the separation layer CIb, CIb', CIb" are formed

on the surface of the first core element CIa, by which first core unit is constituted.

The silicon deposition output Dl is formed outwardly on the surface of the first core

unit so that the silicon rod output is manufactured.

Fig. 8 shows illustrative views schematically showing a cross-section (a) and a

having a circular cross-section;

Fig. 9 shows illustrative views schematically showing a cross-section (a) and a

element having a circular cross-section;

Fig. 10 shows illustrative views schematically showing a cross-section (a) and

forming two kinds of the separation layers on the surface of the conduit-shaped or

tube-shaped first core element having a hollow, concentric rectangular cross-section; Fig. 11 shows illustrative views schematically showing a cross-section (a) and

core element having a circular cross-section; and

Fig. 12 shows illustrative views schematically showing a cross-section (a) and

forming two kinds of the separation layers on the surface of the strip- (or ribbon-)

shaped first core element having a rectangular cross-section.

The procedure and methods for constituting the first core means by forming

one or a plurality of separation layer CIb, CIb', CIb" on the surface of the first core

element CIa, as shown in the drawings, are the same as described hereinabove in

detail. \

Industrial Applicability

As described above, the method and the apparatus for preparing the

poly crystalline silicon rod according to the present invention has the advantages as

follows. 1) Unlike the conventional bell-jar process, the second core means made of

high-purity silicon material is preheated by the first core means which is made of a

resistive material and is electrically heated in advance, and thus an electrical heating

of the second core means can be carried out easily and rapidly without a separate

preheating means, an expensive and complicated electric power supply apparatus or

a complicated preheating procedure.

2) Considering that an electric power supply and control equipment play the

most important roles in the conventional bell-jar type deposition process and the

economical burden is mainly ascribed to the cost for preheating of the silicon core

means, the present invention has the advantage of greatly reducing the investment

costs for the deposition process equipment and the production cost for preparing the

rod-shaped polycrystalline silicon.

3) According to the present invention, the silicon deposition output is

identically formed in an outward direction not only on the surface of the second core

means, but also on the surface of the first core means that serves as a preheating

means of the second core means, and thus a preheating problem of the core means

can be resolved without lowering the production capacity of the deposition reactor.

4) The method of the present invention can easily and promptly solve the

preheating problem of the silicon core means in a newly designed deposition reactor as well as a conventional deposition reactor, thus having an extended scope of its

utilization in the manufacture of rod-shaped polycrystalline silicon.

5) Since two core means with a different material quality are employed in the

deposition reactor by the present invention, it is possible to simultaneously

manufacture two different grades of polycrystalline silicon products for use in both

the solar cells and the semiconductor devices.

6) The separation layer formed on the surface of the first core element

according to the present invention can inhibit or deter the diffusion of impurity

components from the first core element to the deposition output, and it is thus

possible to manufacture high-purity polycrystalline silicon outputs even by using

the non-silicon first core means.

While the present invention has been described and illustrated herein with

reference to the preferred embodiment thereof, it will be apparent to those skilled in

the art that various modifications and variations can be made therein without

departing from the spirit and the scope of the invention. Thus, it is intended that

the present invention covers the modifications and the variations of this invention

that come within the scope of the appended claims and their equivalents.

Claims

1. A method for preparing a polycrystalline silicon rod using a mixed core

means, comprising:

(a) installing a first core means made of a resistive material together with a

second core means made of a silicon material in an inner space of a deposition

reactor;

(b) electrically heating the first core means and pre-heating the second core by

the first core means which is electrically heated;

(c) electrically heating the preheated second core means; and

(d) supplying a reaction gas into the inner space in a state where the first core

means and the second core means are electrically heated for silicon deposition.

2. The method for preparing the polycrystalline silicon rod using a mixed core

means as set forth in claim 1, wherein, in the step of electrically heating the

preheated second core means, the entire second core means is electrically heated

simultaneously or the second core means is divided into a plurality of second core

groups which start to be electrically heated in groups at different starting times.

3. The method for preparing the polycrystalline silicon rod using a mixed core means as set forth in claim 1, wherein, in the step of pre-heating the second core

means, the second core means is pre-heated to a temperature in the range of 350 -

1,000 ⁰C with the first core means being electrically heated to a temperature in the

range of 400 - 3,000 ⁰C.

4. The method for preparing the polycrystalline silicon rod using a mixed core

means as set forth in claim 1 or claim 3, wherein, in the step of pre-heating the

second core means, the second core means is preheated in the inner space at a

pressure in the range of 1-20 bar absolute under an atmosphere selected from the

group consisting of hydrogen, nitrogen, argon, helium and a mixture thereof.

5. The method for preparing the polycrystalline silicon rod using a mixed core

means as set forth in claim 1, wherein the reaction gas is supplied for a silicon

deposition reaction, by which a deposition output is formed outwardly on the first

core means and/ or the second core means with a first deposition output and/ or a

and a reaction temperature.

6. The method for preparing the polycrystalline silicon rod using a mixed core means as set forth in claim 5, wherein the reaction gas contains at least one

silicon-containing component selected from the group consisting of monosilane

(SiH4), dichlorosilane (SiH2Cl2), trichlorosilane (SiHCl3), silicon tetrachloride (SiCk)

and a mixture thereof.

7. The method for preparing the polycrystalline silicon rod using a mixed core

means as set forth in claim 6, wherein the reaction gas further contains at least one

gas component selected from the group consisting of hydrogen, nitrogen, argon,

helium, hydrogen chloride, and a mixture thereof.

8. The method for preparing the polycrystalline silicon rod using a mixed core

means as set forth in claim 5, wherein the silicon deposition occurs in the inner space

at a reaction pressure in the range of 1-20 bar absolute and a reaction temperature in

the range of 650 - 1,300 °C based on the surface temperature of the first deposition

output and/ or the second deposition output.

9. The method for preparing the polycrystalline silicon rod using a mixed core

means as set forth in claim 5, wherein a solar-grade polycrystalline silicon to be used

for solar cells is formed in the first deposition output, and an electronic-grade polycrystalline silicon to be used for semiconductor devices is formed in the second

deposition output.

10. The method for preparing the polycrystalline silicon rod using a mixed core

means as set forth in claim 1, wherein the resistive material is a metal or an alloy

comprising at least one metal element selected from the group consisting of tungsten

(W), rhenium (Re), osmium (Os), tantalum (Ta), molybdenum (Mo), niobium (Nb),

indium (Ir), ruthenium (Ru), technetium (Tc), hafnium (Hf), rhodium (Rh),

vanadium (V), chromium (Cr), zirconium (Zr), platinum (Pt), thorium (Th),

aluminum (Al) and a mixture thereof.

11. The method for preparing the polycrystalline silicon rod using a mixed core

means as set forth in claim 1, wherein the resistive material is a ceramic metal

material containing at least one component selected from the group consisting of

molybdenum suicide (Mo-Si), lanthanum chromium oxide (La-Cr-O), zirconia and a

mixture thereof.

12. The method for preparing the polycrystalline silicon rod using a mixed core means as set forth in claim 1, wherein the resistive material is a carbon-based

material comprising at least one component selected from the group consisting of

amorphous carbon, graphite, silicon carbide (SiC) and a mixture thereof.

13. The method for preparing the polycrystalline silicon rod using a mixed core

means as set forth in claim 1, wherein the silicon material is selected from the group

doped silicon and a mixture thereof.

14. An apparatus for preparing the polycrystalline silicon rod using a mixed core

means and comprising a deposition reactor in which a silicon deposition reaction is

carried out, characterized in that the deposition reactor has a sealed inner space

formed therein by a base unit and a shell and comprises a gas supply means for

supplying a reaction gas into the inner space, a gas outlet means for discharging an

off-gas from the inner space and an electrical heating means required for the silicon

deposition reaction; the electrical heating means consists of an electrode means and a

core means; the core means is divided into a first core means made of a resistive

material and a second core means made of a silicon material; and the electrode

means is divided into a first electrode means and a second electrode means, which are connected to the first core means and the second core means, respectively, and

are electrically independent to each other.

15. The apparatus for preparing the poly crystalline silicon rod using a mixed

core means as set forth in claim 14, wherein the first electrode means and/ or the

second electrode means are/ is installed on the base unit.

16. The apparatus for preparing the poly crystalline silicon rod using a mixed

core means as set forth in claim 14, wherein the first electrode means is divided into

one or a plurality of first electrode groups and the second electrode means is divided

into one or a plurality of second electrode groups, with electric powers being

independently supplied to the respective electrode groups.

17. The apparatus for preparing the polycrystalline silicon rod using a mixed

core means as set forth in claim 14, wherein the first electrode means is constructed

such that an electric power required for heating the first core means is

independently supplied from a first electric power supply source through a first

electric power transmitting means, and the second electrode means is constructed

such that an electric power required for heating the second core means is independently supplied from a second electric power supply source through a

second electric power transmitting means.

18. The apparatus for preparing the polycrystalline silicon rod using a mixed

core means as set forth in claim 17, wherein the first electric power supply source

and the second electric power supply source are constituted separately as

independent electric power converting systems or constituted as one integrated

electric power converting system.

19. The apparatus for preparing the polycrystalline silicon rod using a mixed

core means as set forth in claim 17, wherein the first core means comprised in one or

a plurality of deposition reactors are electrically interconnected with each other by

the first electric power supply source.

20. The apparatus for preparing the polycrystalline silicon rod using a mixed

core means as set forth in claim 17, wherein the second core means comprised in one

or a plurality of deposition reactors are electrically connected to each other by the

second electric power supply source.

21. The apparatus for preparing the poly crystalline silicon rod using a mixed

core means as set forth in claim 14, wherein the first core means or the second core

means have a shape selected from the group consisting of a rod, a wire, a filament, a

bar, a strip and a ribbon having a cross-sectional shape of a circle, an oval or a

polygon, and of a conduit, a tube, a cylinder, and a duct having a cross-sectional

shape of a concentric circle, a concentric oval or a concentric polygon.

22. The apparatus for preparing the polycrystalline silicon rod using a mixed

core means as set forth in claim 14, wherein the resistive material is a metal or an

tungsten (W), rhenium (Re), osmium (Os), tantalum (Ta), molybdenum (Mo),

(Rh), vanadium (V), chromium (Cr), zirconium (Zr), platinum (Pt), thorium (Th),

aluminum (Al) and a mixture thereof.

23. The apparatus for preparing the polycrystalline silicon rod using a mixed

core means as set forth in claim 14, wherein the resistive material is a ceramic metal

material containing at least one component selected from the group consisting of molybdenum suicide (Mo-Si), lanthanum chromium oxide (La-Cr-O), zirconia and a

mixture thereof.

24. The apparatus for preparing the polycrystalline silicon rod using a mixed

core means as set forth in claim 14, wherein the resistive material is a carbon-based

amorphous carbon, graphite, silicon carbide (SiC) and a mixture thereof.

25. The apparatus for preparing the polycrystalline silicon rod using a mixed

core means as set forth in claim 14, wherein the silicon material is selected from the

group consisting of intrinsic polycrystalline silicon, intrinsic single crystalline silicon,

doped silicon and a mixture thereof.

26. The apparatus for preparing the polycrystalline silicon rod using a mixed

core means as set forth in claim 14, wherein the first core means is constituted by

forming one or a plurality of separation layer(s) made of a barrier component on the

surface of a first core element made of a resistive material.

27. The apparatus for preparing the polycrystalline silicon rod using a mixed core means as set forth in claim 26, wherein the number of the separation layer(s) is

in the range of 1 to 5.

28. The apparatus for preparing the polycrystalline silicon rod using a mixed

core means as set forth in claim 26, wherein a barrier component constituting each

layer of the separation layer(s) is selected from the group consisting of intrinsic

silicon nitride, silicon oxide, silicon carbide, silicon oxynitride and a mixture thereof.

29. The apparatus for preparing the polycrystalline silicon rod using a mixed

core means as set forth in claim 26, wherein the barrier component constituting each

layer of the separation layer(s) is selected from a nitride, an oxide, a suicide, a

carbide, an oxynitride or an oxysilicide comprising at least one metal element

selected from the group consisting of tungsten (W), rhenium (Re), osmium (Os),

tantalum (Ta), molybdenum (Mo), niobium (Nb), iridium (Ir), ruthenium (Ru),

technetium (Tc), hafnium (Hf), rhodium (Rh), vanadium (V), chromium (Cr),

(Lu), yttrium (Y), and a mixture thereof.

30. The apparatus for preparing the polycrystalline silicon rod using a mixed core means as set forth in claim 26, wherein the overall thickness of the separation

layer(s) formed on the first core element of the first core means is in the range of 10

nm to 20 mm.

31. The apparatus for preparing the poly crystalline silicon rod using a mixed

core means as set forth in any one of claim 26 to claim 30, wherein a silicon layer is

formed on the separation layer, with the thickness of the silicon layer being in the

range of 1 μm - 10 mm and silicon being selected as the barrier component.

32. The apparatus for preparing the poly crystalline silicon rod using a mixed

core means as set forth in claim 14 or claim 26, wherein the first core units

constituting the first core means is heat-treated at a temperature in the range of 400 -

3,000 ⁰C.

33. The apparatus for preparing the poly crystalline silicon rod using a mixed

core means as set forth in claim 32, wherein the first core units constituting the first

core means is heat-treated by being electrically heated in a deposition reactor.

34. The apparatus for preparing the polycrystalline silicon rod using a mixed core means as set forth in claim 26, wherein the first core means is constructed by

surrounding the surface of the first core element with a plurality of separation layer

constituting units made of the barrier component.

35. The apparatus for preparing the polycrystalline silicon rod using a mixed

core means as set forth in claim 26 or claim 34, wherein the separation layer is

formed by coating the barrier component on the surface of the first core element.

36. The apparatus for preparing the polycrystalline silicon rod using a mixed

core means as set forth in claim 26, wherein part of the separation layer (s) or the

entire separation layer(s) are formed in a deposition reactor.