WO2007132274A3 - High frequency low noise amplifier - Google Patents

High frequency low noise amplifier Download PDF

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Publication number
WO2007132274A3
WO2007132274A3 PCT/GB2007/050271 GB2007050271W WO2007132274A3 WO 2007132274 A3 WO2007132274 A3 WO 2007132274A3 GB 2007050271 W GB2007050271 W GB 2007050271W WO 2007132274 A3 WO2007132274 A3 WO 2007132274A3
Authority
WO
WIPO (PCT)
Prior art keywords
amplifier
high frequency
low noise
frequency low
noise amplifier
Prior art date
Application number
PCT/GB2007/050271
Other languages
French (fr)
Other versions
WO2007132274A2 (en
Inventor
Nandi Loganathan
Original Assignee
Univ Bradford
Nandi Loganathan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Bradford, Nandi Loganathan filed Critical Univ Bradford
Publication of WO2007132274A2 publication Critical patent/WO2007132274A2/en
Publication of WO2007132274A3 publication Critical patent/WO2007132274A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]

Abstract

A high frequency low noise amplifier comprises a current amplifier stage (216) in parallel with an LC resonator (212) and a cascode stage (214) arranged in series. Optionally, a dynamically variable DC bias voltage Vb1 is applied to a gate of a first transistor M1 in the cascode amplifier (214). The amplifier achieves a large power gain whilst preserving impedance isolation. The P1dB compression point is improved whilst maintaining a good noise factor. The exemplary circuit is simple and cost effective to produce.
PCT/GB2007/050271 2006-05-17 2007-05-17 High frequency low noise amplifier WO2007132274A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0609739A GB0609739D0 (en) 2006-05-17 2006-05-17 High frequency low noise amplifier
GB0609739.8 2006-05-17

Publications (2)

Publication Number Publication Date
WO2007132274A2 WO2007132274A2 (en) 2007-11-22
WO2007132274A3 true WO2007132274A3 (en) 2008-02-21

Family

ID=36660292

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2007/050271 WO2007132274A2 (en) 2006-05-17 2007-05-17 High frequency low noise amplifier

Country Status (2)

Country Link
GB (2) GB0609739D0 (en)
WO (1) WO2007132274A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016124236A1 (en) 2015-02-04 2016-08-11 Telefonaktiebolaget Lm Ericsson (Publ) High bandwidth amplifier
CN115483895A (en) * 2022-09-15 2022-12-16 上海米硅科技有限公司 Low-noise amplifier

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3543175A (en) * 1969-07-24 1970-11-24 Us Navy Variable gain amplifier
US3949306A (en) * 1972-11-02 1976-04-06 Sony Corporation High frequency amplifier with frequency conversion
US5072199A (en) * 1990-08-02 1991-12-10 The Boeing Company Broadband N-way active power splitter
WO1994023470A1 (en) * 1993-03-26 1994-10-13 Superconductor Technologies, Inc. Low noise amplifier
US6175274B1 (en) * 1999-07-26 2001-01-16 Nokia Mobile Phones Limited Switched gain low noise amplifier
EP1081573A1 (en) * 1999-08-31 2001-03-07 STMicroelectronics S.r.l. High-precision biasing circuit for a cascoded CMOS stage, particularly for low noise amplifiers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3260948A (en) * 1963-04-19 1966-07-12 Rca Corp Field-effect transistor translating circuit
US5909147A (en) * 1997-09-19 1999-06-01 Honeywell Inc. Amplifier having DC coupled gain stages
FR2770053B1 (en) * 1997-10-22 2000-01-07 Sgs Thomson Microelectronics DOUBLE GAIN AMPLIFIER CIRCUIT
US6292060B1 (en) * 1999-09-13 2001-09-18 Chartered Semiconductor Manufacturing Ltd. Technique to generate negative conductance in CMOS tuned cascode RF amplifiers
US6268774B1 (en) * 1999-11-05 2001-07-31 Intel Corporation Self-tuning amplifier
US6509799B1 (en) * 2000-11-09 2003-01-21 Intel Corporation Electrically tuned integrated amplifier for wireless communications
US7157972B2 (en) * 2002-12-20 2007-01-02 California Institute Of Technology Common gate with resistive feed-through low noise amplifier
US6806777B2 (en) * 2003-01-02 2004-10-19 Intel Corporation Ultra wide band low noise amplifier and method
US6819179B2 (en) * 2003-04-16 2004-11-16 Agency For Science, Technology And Research Variable gain low noise amplifier

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3543175A (en) * 1969-07-24 1970-11-24 Us Navy Variable gain amplifier
US3949306A (en) * 1972-11-02 1976-04-06 Sony Corporation High frequency amplifier with frequency conversion
US5072199A (en) * 1990-08-02 1991-12-10 The Boeing Company Broadband N-way active power splitter
WO1994023470A1 (en) * 1993-03-26 1994-10-13 Superconductor Technologies, Inc. Low noise amplifier
US6175274B1 (en) * 1999-07-26 2001-01-16 Nokia Mobile Phones Limited Switched gain low noise amplifier
EP1081573A1 (en) * 1999-08-31 2001-03-07 STMicroelectronics S.r.l. High-precision biasing circuit for a cascoded CMOS stage, particularly for low noise amplifiers

Non-Patent Citations (14)

* Cited by examiner, † Cited by third party
Title
ABIDI A A ET AL: "A 3-10-GHz Low-Noise Amplifier With Wideband LC-Ladder Matching Network", IEEE JOURNAL OF SOLID-STATE CIRCUITS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 39, no. 12, December 2004 (2004-12-01), pages 2269 - 2277, XP011122648, ISSN: 0018-9200 *
BAKI R A ET AL: "Robust multi-ghz (7.4Ghz) on-chip image rejection in CMOS", CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2005. PROCEEDINGS OF THE IEEE 2005 SAN JOSE, CA, USA SEPT. 18-21, 2005, PISCATAWAY, NJ, USA,IEEE, 18 September 2005 (2005-09-18), pages 334 - 337, XP010874157, ISBN: 0-7803-9023-7 *
BEVILACQUA A ET AL: "21.3 - An Ultra-Wideband CMOS LNA for 3.1 to 10.6GHz Wireless Receivers", SOLID-STATE CIRCUITS CONFERENCE, 2004. DIGEST OF TECHNICAL PAPERS. ISSCC. 2004 IEEE INTERNATIONAL SAN FRANCISCO, CA, USA FEB. 15-19, 2004, PISCATAWAY, NJ, USA,IEEE, 15 February 2004 (2004-02-15), pages 382 - 391, XP010722313, ISBN: 0-7803-8267-6 *
BO-YANG CHANG ET AL: "Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers", MICROWAVE CONFERENCE PROCEEDINGS, 2005. APMC 2005. ASIA-PACIFIC CONFERENCE PROCEEDINGS SUZHOU, CHINA 04-07 DEC. 2005, PISCATAWAY, NJ, USA,IEEE, 4 December 2005 (2005-12-04), pages 1 - 4, XP010901958, ISBN: 0-7803-9433-X *
CHUNG-YU WU ET AL: "The Design of a 3-V 900-MHz CMOS Bandpass Amplifier", IEEE JOURNAL OF SOLID-STATE CIRCUITS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 32, no. 2, February 1997 (1997-02-01), XP011060424, ISSN: 0018-9200 *
DARIUSZ PIENKOWSKI ET AL: "A 3.6 dB NF, 6 GHz band CMOS LNA with 3.6 mW power consumption", WIRELESS TECHNOLOGY, 2006. THE 9TH EUROPEAN CONFERENCE ON, IEEE, PI, September 2006 (2006-09-01), pages 67 - 70, XP031005241, ISBN: 2-9600551-5-2 *
ISMAIL A ET AL: "21.4 - A 3 to 10GHz LNA Using a Wideband LC-ladder Matching Network", SOLID-STATE CIRCUITS CONFERENCE, 2004. DIGEST OF TECHNICAL PAPERS. ISSCC. 2004 IEEE INTERNATIONAL SAN FRANCISCO, CA, USA FEB. 15-19, 2004, PISCATAWAY, NJ, USA,IEEE, 15 February 2004 (2004-02-15), pages 384 - 393, XP010722314, ISBN: 0-7803-8267-6 *
KHAN M Z ET AL: "Comparison of different CMOS low-noise amplifiers topologies for bluetooth applications", WIRELESS AND MICRWAVE TECHNOLOGY, 2005. THE 2005 IEEE ANNUAL CONFERENCE CLEARWATER, FL, USA APR. 7-8, 2005, PISCATAWAY, NJ, USA,IEEE, 7 April 2005 (2005-04-07), pages 100 - 103, XP010850007, ISBN: 0-7803-8861-5 *
MACEDO J ET AL: "A 1.9 GHz silicon receiver with on-chip image filtering", CUSTOM INTEGRATED CIRCUITS CONFERENCE, 1997., PROCEEDINGS OF THE IEEE 1997 SANTA CLARA, CA, USA 5-8 MAY 1997, NEW YORK, NY, USA,IEEE, US, 5 May 1997 (1997-05-05), pages 181 - 184, XP010235287, ISBN: 0-7803-3669-0 *
MACEDO J ET AL: "A 2.5 GHz monolithic silicon image reject filter", CUSTOM INTEGRATED CIRCUITS CONFERENCE, 1996., PROCEEDINGS OF THE IEEE 1996 SAN DIEGO, CA, USA 5-8 MAY 1996, NEW YORK, NY, USA,IEEE, US, 5 May 1996 (1996-05-05), pages 193 - 196, XP010167444, ISBN: 0-7803-3117-6 *
ROGERS J W M ET AL INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS: "A completely integrated 1.8 volt 5 GHz tunable image reject notch filter", 2001 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM. DIGEST OF PAPERS. PHOENIX, AZ, MAY 20 - 22, 2001, IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, NEW YORK, NY : IEEE, US, 20 May 2001 (2001-05-20), pages 75 - 78, XP010551325, ISBN: 0-7803-6601-8 *
STENMAN A ET AL: "A 2-GHz tuned linear CMOS amplifier", CIRCUITS AND SYSTEMS, 2000. 42ND MIDWEST SYMPOSIUM ON AUGUST 8 - 11, 1999, PISCATAWAY, NJ, USA,IEEE, vol. 2, 8 August 1999 (1999-08-08), pages 838 - 841, XP010511080, ISBN: 0-7803-5491-5 *
ZARGARI M ET AL: "Challenges in The Design of CMOS Transceivers for the IEEE 802.11 Wireless LANs: Past, Present and Future", ASIC, 2005. ASICON 2005. 6TH INTERNATIONAL CONFERENCE ON SHANGHAI, CHINA 24-27 OCT. 2005, PISCATAWAY, NJ, USA,IEEE, 24 October 2005 (2005-10-24), pages 11 - 14, XP010904342, ISBN: 0-7803-9210-8 *
ZITO D ET AL: "Single-chip heterodyne receiver for 5-6 GHz WLAN with high image rejection", SIGNALS, CIRCUITS AND SYSTEMS, 2005. ISSCS 2005. INTERNATIONAL SYMPOSIUM ON IASI, ROMANIA JULY 14-15, 2005, PISCATAWAY, NJ, USA,IEEE, 14 July 2005 (2005-07-14), pages 259 - 262, XP010837453, ISBN: 0-7803-9029-6 *

Also Published As

Publication number Publication date
GB2438312A (en) 2007-11-21
WO2007132274A2 (en) 2007-11-22
GB0709492D0 (en) 2007-06-27
GB0609739D0 (en) 2006-06-28

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