WO2007127515A3 - Interrupteurs piezoelectriques mems et leurs procedes de fabrication - Google Patents

Interrupteurs piezoelectriques mems et leurs procedes de fabrication Download PDF

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Publication number
WO2007127515A3
WO2007127515A3 PCT/US2007/061336 US2007061336W WO2007127515A3 WO 2007127515 A3 WO2007127515 A3 WO 2007127515A3 US 2007061336 W US2007061336 W US 2007061336W WO 2007127515 A3 WO2007127515 A3 WO 2007127515A3
Authority
WO
WIPO (PCT)
Prior art keywords
high temperature
making
methods
piezoelectric layer
mems switches
Prior art date
Application number
PCT/US2007/061336
Other languages
English (en)
Other versions
WO2007127515A2 (fr
Inventor
Lianjun Liu
Original Assignee
Freescale Semiconductor Inc
Lianjun Liu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc, Lianjun Liu filed Critical Freescale Semiconductor Inc
Priority to CN2007800067673A priority Critical patent/CN101390226B/zh
Priority to JP2008557439A priority patent/JP2009528667A/ja
Publication of WO2007127515A2 publication Critical patent/WO2007127515A2/fr
Publication of WO2007127515A3 publication Critical patent/WO2007127515A3/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H57/00Electrostrictive relays; Piezoelectric relays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H57/00Electrostrictive relays; Piezoelectric relays
    • H01H2057/006Micromechanical piezoelectric relay

Landscapes

  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

L'invention concerne des interrupteurs piézo-électriques MEMS (100) ayant l'avantage de pouvoir être fabriqués d'une seule pièce et en une structure compacte, et qui ne sont pas affectés par des modifications morphologiques des matériaux de contact dues aux hautes températures et par leurs conséquences négatives qui affecteraient les propriétés. Par modifications morphologiques dues aux hautes températures, on entend des modifications qui surviennent pendant la fabrication quand les contacts métalliques, comme les lignes de fréquence radio (125, 130) et les barres de courts-circuits (150), sont exposés aux températures nécessaires au recuit d'une couche piézoélectrique ou aux températures rencontrées pendant le dépôt à haute température de la couche piézoélectrique si l'on utilise de tels procédés au lieu de celui de la présente invention.
PCT/US2007/061336 2006-02-28 2007-01-31 Interrupteurs piezoelectriques mems et leurs procedes de fabrication WO2007127515A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2007800067673A CN101390226B (zh) 2006-02-28 2007-01-31 压电mems开关及制造方法
JP2008557439A JP2009528667A (ja) 2006-02-28 2007-01-31 圧電memsスイッチ及びその作成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/363,791 US7556978B2 (en) 2006-02-28 2006-02-28 Piezoelectric MEMS switches and methods of making
US11/363,791 2006-02-28

Publications (2)

Publication Number Publication Date
WO2007127515A2 WO2007127515A2 (fr) 2007-11-08
WO2007127515A3 true WO2007127515A3 (fr) 2008-01-24

Family

ID=38444513

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/061336 WO2007127515A2 (fr) 2006-02-28 2007-01-31 Interrupteurs piezoelectriques mems et leurs procedes de fabrication

Country Status (5)

Country Link
US (1) US7556978B2 (fr)
JP (1) JP2009528667A (fr)
CN (1) CN101390226B (fr)
TW (1) TW200739975A (fr)
WO (1) WO2007127515A2 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354901B1 (en) 2009-02-20 2013-01-15 Rf Micro Devices, Inc. Thermally tolerant anchor configuration for a circular cantilever
US8570122B1 (en) 2009-05-13 2013-10-29 Rf Micro Devices, Inc. Thermally compensating dieletric anchors for microstructure devices
IT1397520B1 (it) * 2009-12-21 2013-01-16 Ribes Ricerche E Formazione S R L Microswitch piezoelettrico, in particolare per applicazioni industriali.
KR20110082420A (ko) * 2010-01-11 2011-07-19 삼성전자주식회사 초전 재료를 이용한 에너지 수확 장치
JP5598653B2 (ja) * 2010-02-01 2014-10-01 ソニー株式会社 有接点スイッチ
DE102010002818B4 (de) * 2010-03-12 2017-08-31 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelementes
US8551798B2 (en) * 2010-09-21 2013-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. Microstructure with an enhanced anchor
US9225311B2 (en) 2012-02-21 2015-12-29 International Business Machines Corporation Method of manufacturing switchable filters
US9633930B2 (en) * 2014-11-26 2017-04-25 Kookmin University Industry Academy Cooperation Foundation Method of forming through-hole in silicon substrate, method of forming electrical connection element penetrating silicon substrate and semiconductor device manufactured thereby
CN108584864B (zh) * 2018-04-16 2019-08-09 大连理工大学 一种基于聚酰亚胺的柔性静电驱动mems继电器的制造方法
US11050012B2 (en) 2019-04-01 2021-06-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method to protect electrodes from oxidation in a MEMS device
US20210139314A1 (en) * 2019-11-07 2021-05-13 Innovative Interface Laboratory Corp. Linear actuator
US11360014B1 (en) * 2021-07-19 2022-06-14 Multi-Chem Group, Llc Methods and systems for characterizing fluid composition and process optimization in industrial water operations using MEMS technology

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
US5938612A (en) * 1997-05-05 1999-08-17 Creare Inc. Multilayer ultrasonic transducer array including very thin layer of transducer elements
US6060336A (en) * 1998-12-11 2000-05-09 C.F. Wan Incorporated Micro-electro mechanical device made from mono-crystalline silicon and method of manufacture therefore
US20030127698A1 (en) * 2002-01-04 2003-07-10 Samsung Electronics Co., Ltd. Cantilever having step-up structure and method for manufacturing the same
US6706548B2 (en) * 2002-01-08 2004-03-16 Motorola, Inc. Method of making a micromechanical device
US6794101B2 (en) * 2002-05-31 2004-09-21 Motorola, Inc. Micro-electro-mechanical device and method of making
US20050237127A1 (en) * 2002-06-05 2005-10-27 Koninklijke Phillips Electrics N.V. Electronic device and method of matching the impedance thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5004555A (en) * 1989-10-31 1991-04-02 Industrial Technology Research Institute Heat cycle treatment for improving the performance of piezoelectric ceramics
US5638946A (en) * 1996-01-11 1997-06-17 Northeastern University Micromechanical switch with insulated switch contact
US6046659A (en) * 1998-05-15 2000-04-04 Hughes Electronics Corporation Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications
WO2002096166A1 (fr) * 2001-05-18 2002-11-28 Corporation For National Research Initiatives Systemes microelectromecaniques (mems) radiofrequences sur substrats a ceramiques cocuites a basse temperature (ltcc)
US7098577B2 (en) 2002-10-21 2006-08-29 Hrl Laboratories, Llc Piezoelectric switch for tunable electronic components
US7132723B2 (en) 2002-11-14 2006-11-07 Raytheon Company Micro electro-mechanical system device with piezoelectric thin film actuator
US7119440B2 (en) * 2004-03-30 2006-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Back end IC wiring with improved electro-migration resistance

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
US5938612A (en) * 1997-05-05 1999-08-17 Creare Inc. Multilayer ultrasonic transducer array including very thin layer of transducer elements
US6060336A (en) * 1998-12-11 2000-05-09 C.F. Wan Incorporated Micro-electro mechanical device made from mono-crystalline silicon and method of manufacture therefore
US20030127698A1 (en) * 2002-01-04 2003-07-10 Samsung Electronics Co., Ltd. Cantilever having step-up structure and method for manufacturing the same
US6706548B2 (en) * 2002-01-08 2004-03-16 Motorola, Inc. Method of making a micromechanical device
US6794101B2 (en) * 2002-05-31 2004-09-21 Motorola, Inc. Micro-electro-mechanical device and method of making
US20050237127A1 (en) * 2002-06-05 2005-10-27 Koninklijke Phillips Electrics N.V. Electronic device and method of matching the impedance thereof

Also Published As

Publication number Publication date
TW200739975A (en) 2007-10-16
CN101390226A (zh) 2009-03-18
JP2009528667A (ja) 2009-08-06
US7556978B2 (en) 2009-07-07
US20070202626A1 (en) 2007-08-30
CN101390226B (zh) 2011-04-06
WO2007127515A2 (fr) 2007-11-08

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