WO2007109368A2 - Substrat à conduction améliorée du courant électrique pour module thermoélectrique - Google Patents
Substrat à conduction améliorée du courant électrique pour module thermoélectrique Download PDFInfo
- Publication number
- WO2007109368A2 WO2007109368A2 PCT/US2007/007325 US2007007325W WO2007109368A2 WO 2007109368 A2 WO2007109368 A2 WO 2007109368A2 US 2007007325 W US2007007325 W US 2007007325W WO 2007109368 A2 WO2007109368 A2 WO 2007109368A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- elements
- pattern
- interconnection elements
- type
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 238000005728 strengthening Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 description 14
- 238000010248 power generation Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 206010052805 Drug tolerance decreased Diseases 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000914 Metallic fiber Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to thermoelectric modules used either for electric power generation o for heating and cooling. More specifically, it relates to a means to increase the electric current flo ⁇ through such thermoelectric modules resulting in performance improvement of such modules.
- thermoelectric module can be used either to produce electric power from a temperature differential or to produce cooling from an electric current. It is a solid-state device that operates oi the Peltier (cooling) or the Seebeck (generation of electrical current) effect, which are known to those skilled in the art and are described in detail in McGraw-Hill Encyclopedia of Science and Technology, 8 th edition, 1997, Vol.18, p349-359 and Vol. 13 p.212. (See also CRC Handbook of Thermoelectrics and Thermoelectric Refrigeration edited by D.M Rowe, 1995, which is incorporated herein by reference.)
- thermoelectric module of the prior art is shown in FIG. 1. It consists o two substrates 1 made of a rigid dielectric material, such as alumina, aluminum nitride or any othei suitable insulating substrate.
- Interconnection elements 3 are placed on the interior surfaces of the two substrates 1 to connect th ⁇ thermoelements 4, as described below. Generally, a layer of copper or any other metallic conductc is adhered to the interior surfaces of the substrate and is etched to leave only the desired interconnection elements 3. The thickness of conventional interconnection elements 3 usually ranges between 0.004 inches to 0.02 inches. In addition, a complimenting layer of metal 5 such as copper, with similar thickness as the metallic layer on the inside, is often placed on the exterior surfaces of the two substrates 1 to help prevent warping of the substrates 1 due to differential expansion coefficients between the substrate material and the metallic conductors on the inside surface of the module.
- the metallic layer on the outside, or strengthening element, 5 is usually produced to mirror the interconnection elements 3 on the inside of the module, using the same process as is used for the interconnection elements 3.
- This outside layer of metal 5, such as copper does not carry any electrical current and is only used to compensate for interfacial stresses due to a thermal expansion coefficient mismatch between the substrate material and the metallic interconnection elements 3 on the inside of the module electrically connecting the thermoelements 4.
- thermoelements 4 consist of alternating P-type semiconductors 6 and N-type semiconductors ' usually of bismuth telluride Bi 2 Te 3 doped with other elements to impart P or N type semiconductc properties although other thermoelement materials exist commercially and are under development.
- the present invention applies to all thermoelectric materials.
- thermoelements and interconnection elements are electrically connected in series (and thermally connected in parallel) through intimate contact with interconnection elements 3.
- intimate contact between thermoelements and interconnection elements is achieved via solder, though other means exist to achieve sufficient thermal and electrical contact such the application o mechanical force.
- anti-diffusion or mechanically compliant materials may exist between thermoelements and interconnection elements; any such configurations are understood to fall unde and apply to the present invention.
- thermoelectric modules both for electronic power generation and for cooling.
- Thermoelectric modules are both reliable and are silent in operation because of their solid state construction without the use of moving parts.
- Thermoelectric modules used for power generation can produce electricity from waste heat, increasing efficiency and reducing pollutant emissions.
- Thermoelectric modules used for cooling can achieve substantial cooling without the requirement of compressors, motors and of volatile refrigeration fluids.
- thermoelements 4 of larger cross-sectional area to decrease their count in a given size thermoelectric module and to increase the reliability of the series circuit comprising the thermoelements 4 and the interconnection elements 3.
- thermoelement cross-sectiorial area generally warrants an increase in the electric current flow through the circuit comprising the thermoelements 4 and the interconnection elements 3.
- the increased electric current flow is not tolerated as well by a thermoelectric module operating in the cooling mode as compared to one operating in the power generation mode.
- This decreased tolerance in the heating and cooling mode is due primarily to the generally low efficiency of thermoelectric energy conversion, where cooling with a thermoelectric module results in significantly more electric current flow when compared to power generation.
- the size of the thermoelements 4, particularly in modules used for cooling is limited, at leasi in part, by the current carrying capacity of the interconnection elements 3.
- the current carrying capacity of the interconnection elements 3 can be increased by increasing the width or the thickness of the interconnection elements 3.
- the width of the interconnection elemen 3 is limited, in part, by the size (cross-section) of the thermoelement 4 as well as, in part, by the need to maintain sufficient thermoelement packing density within the thermoelectric module.
- the thickness of the interconnection elements 3 is limited by the thickness that can be tolerated when employing standard etching processes.
- thermoelements 4 of larger cross-sections without increasing the width or the thickness of the interconnection elements 3 on the inside of the module. It is a purpose of the present invention to increase the current carrying capacity of the said interconnection elements 3 by generating a dual current carrying path on the inside and the outside of the module.
- a high! anisotropic material having excellent thermal conductivity in the direction out of the plane of the substrate as well as excellent electrical conductivity in the direction out of plane of the substrate ar essentially zero electrical conductivity in the plane of the substrate.
- This material consists of numerous metallic fibers embedded essentially normal to the plane of the substrate in a layer of polymeric material.
- the fibers may be metallic in nature (such as Ni, Cu or any other metal depending on the thermal end electrical conductivity, as well as Coefficents of Thermal Expansion requirements or carbon fiber).
- the technology and fabrication of this material is covered by US Patents # 5,695,847 and ⁇ 5,849,130.
- the present invention is a thermoelectric module with electric current carrying substrates.
- Two substrates, each with an interior surface and an exterior surface, are made of an anisotropic materi ⁇ having high electrical and thermal conductivity normal to the plane of the substrate and low electrical and thermal conductivity laterally in the plane of the substrate.
- Each substrate has a pattern of conducting interconnection elements on its interior surface.
- a plurality of thermoelements comprising both P-type and N-type semiconductors, are sandwiched between the interior surfaces of the substrates such that alternating P-type and N-type semiconductors are connected in a series circuit by the interconnection elements on the interior surfaces of the substrates.
- a plurality of conducting strengthening elements are placed on the exterior surface of the substrate in patterns that mirror the pattern of the interconnection elements on the interior surfaces of the substrates, thereby allowing a part of the electrical current in the series circuit that would otherwis ⁇ be carried by the interconnection elements to be carried by the strengthening elements.
- FIG. 1 shows a cross-section of a thermoelectric module of the prior art
- FIG. 2 shows a cross-section of a thermoelectric module of a preferred embodiment of the present invention
- FIG 3 shows the electric current flow paths between two thermoelements of a thermo electric module of a preferred embodiment of the present invention.
- FIG. 4 shows a "grey-scale" rendition of the current density vector sum of a pair of thermoelements connected according to a preferred embodiment of the present invention
- FIG. 5 shows a cross-section of a thermoelectric module of a preferred embodiment of the present invention in which a failure in the circuit is diagnosed and repaired.
- thermoelements allows an increase in the cross-sectional area of thermoelements in a modul by increasing the electric current carrying capacity of the circuit comprising the thermoelements and interconnection elements.
- This enables the fabrication of a large size, multi-purpose (power generator or cooler) thermoelectric module, for example 10 inches by 10 inches or more, to be designed with a lower number of thermoelements than was possible in the prior art and achieve the much higher current carrying capacity required between elements due to the presence of a conductor on the inside and the outside of the module without the limitations of resistive heating o the conductors due to high current density.
- FIG. 2 A preferred embodiment of the present invention is shown in FIG. 2, which uses the same numbering as is used in FIG. 1 for the same elements.
- the strengthening elements 5 that are placed on the exterior surface of the two substrates IA to reduce warping are used to provide additional electric current carrying capacity due to the properties of the anisotropic material used for the substrates IA.
- the strengthening elements 5 to provide additional current carrying capacity is achieved by using a material for the two substrates IA that exhibits a low thermal and electrical resistance perpendicular to the plane of the substrate but exhibits a high thermal and electrical resistance in tr plane of the substrate.
- the substrates IA of this preferred embodiment comprise electrically and thermally conductive fibers, such as nickel, copper or carbon, that are embedded in a polymer resii such as polyimide, polyamide, epoxy or liquid crystal, in a manner such that the fibers are oriented perpendicular, or close to perpendicular, to the plane of a substrate IA.
- a polymer resii such as polyimide, polyamide, epoxy or liquid crystal
- thermoelement 4 As shown in FIG. 3, a majority of the electric current flows through path 10 from one thermoelement 4, through interconnection element 3 to another thermoelement 4.
- substrates IA using the material described herein for the substrates IA produces a substrate with a low thermal and electrical resistance perpendicular to the plane of the substrate and a high thermal and electrical resistance in the plane of the substrate.
- some current can flow through path 10 from thermoelement 4, to an interconnection element 3 through the substrate IA to the strengthening element 5, along the same strengthening element 5, back through the substrate IA, to an interconnection element 3 and into another thermoelement 4, thereby increasing the electric curren capacity of the circuit, as shown in FIG 3.
- FIG. 4 shows a typical electric current density contour plot (vector sum, AJm 2 ) using "gray scale"
- vector sum AJm 2
- FIG. 4 shows a typical electric current density contour plot (vector sum, AJm 2 ) using "gray scale”
- the finite element analysis used to obtain this result shows that a significant amount of electric current flow in and out of the strengthening element 5.
- a majority of the electric current flows through the interconnection element 3, but a significant amount of current carrying capacity is added by the strengthening element 5.
- thermoelectric modules may contain several hundred or even thousands of thermoelements electrically connected i series or in a combination of serial and parallel connection. If the solder connection of one thermoelement to an interconnection element fails the entire series circuit fails. Moreover, there is no way to find the failed solder connection from the outside of the thermoelectric module.
- FIG. 5 which uses the same numbering a: is used in FIG. 2 for the same elements, a failure 8 of an electrical connection of a thermoelement - to an interconnection element 3 is shown.
- thermoelectric modules used either for electric power generation and cooling.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
L'invention concerne un module thermoélectrique à substrats conducteurs autorisant une l'intensité maximale admissible accrue entre les éléments thermiques grâce à la présence de conducteurs sur l'intérieur et l'extérieur des substrats.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78482406P | 2006-03-22 | 2006-03-22 | |
US60/784,824 | 2006-03-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007109368A2 true WO2007109368A2 (fr) | 2007-09-27 |
WO2007109368A3 WO2007109368A3 (fr) | 2008-10-16 |
Family
ID=38523121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/007325 WO2007109368A2 (fr) | 2006-03-22 | 2007-03-22 | Substrat à conduction améliorée du courant électrique pour module thermoélectrique |
Country Status (1)
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WO (1) | WO2007109368A2 (fr) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010014958A3 (fr) * | 2008-08-01 | 2011-01-06 | Bsst Llc | Éléments thermoélectriques thermiquement isolés renforcés |
US9006557B2 (en) | 2011-06-06 | 2015-04-14 | Gentherm Incorporated | Systems and methods for reducing current and increasing voltage in thermoelectric systems |
US9252512B2 (en) | 2013-08-14 | 2016-02-02 | Hamilton Sundstrand Corporation | Power connector having enhanced thermal conduction characteristics |
US9293680B2 (en) | 2011-06-06 | 2016-03-22 | Gentherm Incorporated | Cartridge-based thermoelectric systems |
US9306143B2 (en) | 2012-08-01 | 2016-04-05 | Gentherm Incorporated | High efficiency thermoelectric generation |
US9310112B2 (en) | 2007-05-25 | 2016-04-12 | Gentherm Incorporated | System and method for distributed thermoelectric heating and cooling |
JP2017069443A (ja) * | 2015-09-30 | 2017-04-06 | ヤマハ株式会社 | 熱電変換モジュール |
US9719701B2 (en) | 2008-06-03 | 2017-08-01 | Gentherm Incorporated | Thermoelectric heat pump |
CN108305935A (zh) * | 2018-02-08 | 2018-07-20 | 南方科技大学 | 柔性热电器件及制备方法 |
US10270141B2 (en) | 2013-01-30 | 2019-04-23 | Gentherm Incorporated | Thermoelectric-based thermal management system |
US10991869B2 (en) | 2018-07-30 | 2021-04-27 | Gentherm Incorporated | Thermoelectric device having a plurality of sealing materials |
US11152557B2 (en) | 2019-02-20 | 2021-10-19 | Gentherm Incorporated | Thermoelectric module with integrated printed circuit board |
GB2606594A (en) * | 2021-05-10 | 2022-11-16 | European Thermodynamics Ltd | Thermoelectric module |
WO2022238679A1 (fr) * | 2021-05-10 | 2022-11-17 | European Thermodynamics Limited | Module thermoélectrique |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020139123A1 (en) * | 2001-02-09 | 2002-10-03 | Bell Lon E. | Efficiency thermoelectrics utilizing thermal isolation |
-
2007
- 2007-03-22 WO PCT/US2007/007325 patent/WO2007109368A2/fr active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020139123A1 (en) * | 2001-02-09 | 2002-10-03 | Bell Lon E. | Efficiency thermoelectrics utilizing thermal isolation |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9310112B2 (en) | 2007-05-25 | 2016-04-12 | Gentherm Incorporated | System and method for distributed thermoelectric heating and cooling |
US10464391B2 (en) | 2007-05-25 | 2019-11-05 | Gentherm Incorporated | System and method for distributed thermoelectric heating and cooling |
US9366461B2 (en) | 2007-05-25 | 2016-06-14 | Gentherm Incorporated | System and method for climate control within a passenger compartment of a vehicle |
US9719701B2 (en) | 2008-06-03 | 2017-08-01 | Gentherm Incorporated | Thermoelectric heat pump |
US10473365B2 (en) | 2008-06-03 | 2019-11-12 | Gentherm Incorporated | Thermoelectric heat pump |
WO2010014958A3 (fr) * | 2008-08-01 | 2011-01-06 | Bsst Llc | Éléments thermoélectriques thermiquement isolés renforcés |
EP2333829A3 (fr) * | 2008-08-01 | 2013-11-27 | Bsst Llc | Éléments thermoélectriques thermiquement isolés renforcés |
US9293680B2 (en) | 2011-06-06 | 2016-03-22 | Gentherm Incorporated | Cartridge-based thermoelectric systems |
US9006557B2 (en) | 2011-06-06 | 2015-04-14 | Gentherm Incorporated | Systems and methods for reducing current and increasing voltage in thermoelectric systems |
US9306143B2 (en) | 2012-08-01 | 2016-04-05 | Gentherm Incorporated | High efficiency thermoelectric generation |
US10784546B2 (en) | 2013-01-30 | 2020-09-22 | Gentherm Incorporated | Thermoelectric-based thermal management system |
US10270141B2 (en) | 2013-01-30 | 2019-04-23 | Gentherm Incorporated | Thermoelectric-based thermal management system |
US9252512B2 (en) | 2013-08-14 | 2016-02-02 | Hamilton Sundstrand Corporation | Power connector having enhanced thermal conduction characteristics |
JP2017069443A (ja) * | 2015-09-30 | 2017-04-06 | ヤマハ株式会社 | 熱電変換モジュール |
CN108305935A (zh) * | 2018-02-08 | 2018-07-20 | 南方科技大学 | 柔性热电器件及制备方法 |
US10991869B2 (en) | 2018-07-30 | 2021-04-27 | Gentherm Incorporated | Thermoelectric device having a plurality of sealing materials |
US11075331B2 (en) | 2018-07-30 | 2021-07-27 | Gentherm Incorporated | Thermoelectric device having circuitry with structural rigidity |
US11223004B2 (en) | 2018-07-30 | 2022-01-11 | Gentherm Incorporated | Thermoelectric device having a polymeric coating |
US11152557B2 (en) | 2019-02-20 | 2021-10-19 | Gentherm Incorporated | Thermoelectric module with integrated printed circuit board |
GB2606594A (en) * | 2021-05-10 | 2022-11-16 | European Thermodynamics Ltd | Thermoelectric module |
WO2022238679A1 (fr) * | 2021-05-10 | 2022-11-17 | European Thermodynamics Limited | Module thermoélectrique |
Also Published As
Publication number | Publication date |
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