WO2007106462A3 - Temperature controlled cold trap for a vapour deposition process and uses thereof - Google Patents

Temperature controlled cold trap for a vapour deposition process and uses thereof Download PDF

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Publication number
WO2007106462A3
WO2007106462A3 PCT/US2007/006269 US2007006269W WO2007106462A3 WO 2007106462 A3 WO2007106462 A3 WO 2007106462A3 US 2007006269 W US2007006269 W US 2007006269W WO 2007106462 A3 WO2007106462 A3 WO 2007106462A3
Authority
WO
WIPO (PCT)
Prior art keywords
phase mixture
vapor phase
condensing apparatus
deposition process
vapour deposition
Prior art date
Application number
PCT/US2007/006269
Other languages
French (fr)
Other versions
WO2007106462A2 (en
Inventor
John Peck
Michael M Litwin
Original Assignee
Praxair Technology Inc
John Peck
Michael M Litwin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/709,435 external-priority patent/US20080206445A1/en
Application filed by Praxair Technology Inc, John Peck, Michael M Litwin filed Critical Praxair Technology Inc
Priority to JP2009500422A priority Critical patent/JP2009530083A/en
Priority to KR1020087022492A priority patent/KR101388817B1/en
Priority to DE112007000541T priority patent/DE112007000541T5/en
Publication of WO2007106462A2 publication Critical patent/WO2007106462A2/en
Publication of WO2007106462A3 publication Critical patent/WO2007106462A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D5/00—Condensation of vapours; Recovering volatile solvents by condensation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D5/00—Condensation of vapours; Recovering volatile solvents by condensation
    • B01D5/0003—Condensation of vapours; Recovering volatile solvents by condensation by using heat-exchange surfaces for indirect contact between gases or vapours and the cooling medium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D5/00—Condensation of vapours; Recovering volatile solvents by condensation
    • B01D5/0033—Other features
    • B01D5/0051—Regulation processes; Control systems, e.g. valves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D7/00—Sublimation
    • B01D7/02—Crystallisation directly from the vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D8/00—Cold traps; Cold baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)

Abstract

This invention relates to a separation process comprising (i) introducing a vapor phase mixture into a condensing apparatus, said vapor phase mixture comprising at least one desirable component and at least one undesirable component; (ii) controlling the temperature in the condensing apparatus utilizing a heat-transfer gas; and (iii) operating the condensing apparatus at a temperature and a pressure sufficient to selectively condense at least a portion of said vapor phase mixture and thereby yield a recovered content containing said at least one desirable component. The separation process is useful in semiconductor applications such as recovery of unreacted organometallic compound precursors in chemical vapor deposition or atomic layer deposition processes.
PCT/US2007/006269 2006-03-14 2007-03-12 Temperature controlled cold trap for a vapour deposition process and uses thereof WO2007106462A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009500422A JP2009530083A (en) 2006-03-14 2007-03-12 Selective separation process
KR1020087022492A KR101388817B1 (en) 2006-03-14 2007-03-12 Temperature controlled cold trap for a vapour deposition process and uses thereof
DE112007000541T DE112007000541T5 (en) 2006-03-14 2007-03-12 Selective separation processes

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US78174306P 2006-03-14 2006-03-14
US60/781,743 2006-03-14
US11/709,435 US20080206445A1 (en) 2007-02-22 2007-02-22 Selective separation processes
US11/709,435 2007-02-22

Publications (2)

Publication Number Publication Date
WO2007106462A2 WO2007106462A2 (en) 2007-09-20
WO2007106462A3 true WO2007106462A3 (en) 2007-11-08

Family

ID=38375633

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/006269 WO2007106462A2 (en) 2006-03-14 2007-03-12 Temperature controlled cold trap for a vapour deposition process and uses thereof

Country Status (4)

Country Link
JP (1) JP2009530083A (en)
KR (1) KR101388817B1 (en)
DE (1) DE112007000541T5 (en)
WO (1) WO2007106462A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8030212B2 (en) * 2007-09-26 2011-10-04 Eastman Kodak Company Process for selective area deposition of inorganic materials
US8728240B2 (en) * 2012-05-02 2014-05-20 Msp Corporation Apparatus for vapor condensation and recovery
NL2010809C2 (en) * 2013-05-16 2014-11-24 Smit Ovens Bv DEVICE AND METHOD FOR APPLYING A MATERIAL TO A SUBSTRATE.
FR3045673B1 (en) 2015-12-18 2020-02-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR DEPOSITING A DLI-MOCVD COATING WITH RECYCLING OF THE PRECURSOR COMPOUND
US12055504B2 (en) * 2019-09-30 2024-08-06 Saudi Arabian Oil Company Systems and methods for high temperature, high pressure isothermal calorimetry

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551197A (en) * 1984-07-26 1985-11-05 Guilmette Joseph G Method and apparatus for the recovery and recycling of condensable gas reactants
EP0847789A1 (en) * 1996-12-16 1998-06-17 Ebara Corporation Trapping device
EP1031640A1 (en) * 1999-02-26 2000-08-30 Ebara Corporation Trap apparatus
EP1205223A1 (en) * 2000-11-13 2002-05-15 Ebara Corporation Trap apparatus
US20020069825A1 (en) * 2000-12-11 2002-06-13 Tanaka Kikinzoku Kogyo K.K Low-pressure CVD apparatus and method of manufacturing a thin film
US20050155552A1 (en) * 2000-03-31 2005-07-21 Tanaka Kikinzoku Kogyo K.K. CVD process for forming a thin film

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5920363B2 (en) * 1977-06-08 1984-05-12 株式会社日立製作所 Operation system for sublimation gas collection equipment
JPH0234047B2 (en) * 1981-05-08 1990-08-01 Tokyo Shibaura Electric Co KOORUDOTORATSUPUONDOSEIGYOSOCHI
JPH07193008A (en) * 1993-12-27 1995-07-28 Toshiba Corp Semiconductor chemical vapor growth system
US6332925B1 (en) * 1996-05-23 2001-12-25 Ebara Corporation Evacuation system
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
US6099649A (en) * 1997-12-23 2000-08-08 Applied Materials, Inc. Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal
JP2001330367A (en) * 2000-03-17 2001-11-30 Nakagami Corporation:Kk Device and process for solidifying and collecting gas, and method for detoxifying discharged gas using the device and/or process

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551197A (en) * 1984-07-26 1985-11-05 Guilmette Joseph G Method and apparatus for the recovery and recycling of condensable gas reactants
EP0847789A1 (en) * 1996-12-16 1998-06-17 Ebara Corporation Trapping device
EP1031640A1 (en) * 1999-02-26 2000-08-30 Ebara Corporation Trap apparatus
US20050155552A1 (en) * 2000-03-31 2005-07-21 Tanaka Kikinzoku Kogyo K.K. CVD process for forming a thin film
EP1205223A1 (en) * 2000-11-13 2002-05-15 Ebara Corporation Trap apparatus
US20020069825A1 (en) * 2000-12-11 2002-06-13 Tanaka Kikinzoku Kogyo K.K Low-pressure CVD apparatus and method of manufacturing a thin film

Also Published As

Publication number Publication date
DE112007000541T5 (en) 2009-01-22
JP2009530083A (en) 2009-08-27
WO2007106462A2 (en) 2007-09-20
KR20090003228A (en) 2009-01-09
KR101388817B1 (en) 2014-04-23

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