WO2007106071A3 - Method for switching magnetic random access memory elements and magnetic element structures - Google Patents

Method for switching magnetic random access memory elements and magnetic element structures Download PDF

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Publication number
WO2007106071A3
WO2007106071A3 PCT/US2006/007026 US2006007026W WO2007106071A3 WO 2007106071 A3 WO2007106071 A3 WO 2007106071A3 US 2006007026 W US2006007026 W US 2006007026W WO 2007106071 A3 WO2007106071 A3 WO 2007106071A3
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic
magnetization
random access
access memory
memory elements
Prior art date
Application number
PCT/US2006/007026
Other languages
French (fr)
Other versions
WO2007106071A2 (en
Inventor
Siu-Tat Chui
Original Assignee
Univ Delaware
Siu-Tat Chui
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Delaware, Siu-Tat Chui filed Critical Univ Delaware
Priority to US11/885,703 priority Critical patent/US20080273381A1/en
Publication of WO2007106071A2 publication Critical patent/WO2007106071A2/en
Priority to US12/342,524 priority patent/US20090207651A1/en
Publication of WO2007106071A3 publication Critical patent/WO2007106071A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Abstract

A method for storing data in a magnetic memory element of an array of elements which avoids inadvertent switching of other elements. First and second magnetic fields are applied to a selected magnetic element for a first time interval to switch the element into an intermediate state where minor domains are created. A second value of magnetic fields are then applied large enough to switch the magnetization of the minor domains, but not large enough to switch the magnetization of an adjacent memory cell. Once the minor domain is switched, the magnetization of the magnetic element assumes the state where the major domain has a magnetization direction representing the value of the stored data bit.
PCT/US2006/007026 2005-03-01 2006-03-01 Method for switching magnetic random access memory elements and magnetic element structures WO2007106071A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US11/885,703 US20080273381A1 (en) 2005-03-01 2006-03-01 Method for Switching Random Access Memory Elements and Magnetic Element Structures
US12/342,524 US20090207651A1 (en) 2005-03-01 2008-12-23 Method for switching magnetic random access memory elements and magnetic element structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65689906P 2006-03-01 2006-03-01
US60/656,899 2006-03-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/748,918 Continuation-In-Part US20070263430A1 (en) 2005-03-01 2007-05-15 Method for switching magnetic random access memory elements and magnetic element structures

Publications (2)

Publication Number Publication Date
WO2007106071A2 WO2007106071A2 (en) 2007-09-20
WO2007106071A3 true WO2007106071A3 (en) 2009-04-16

Family

ID=38509912

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/007026 WO2007106071A2 (en) 2005-03-01 2006-03-01 Method for switching magnetic random access memory elements and magnetic element structures

Country Status (1)

Country Link
WO (1) WO2007106071A2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5600297A (en) * 1994-08-28 1997-02-04 U.S. Philips Corporation Magnetic field sensor
US7190613B2 (en) * 2003-06-23 2007-03-13 Kabushiki Kaisha Toshiba Magnetic random access memory device having thermal agitation property and high write efficiency

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5600297A (en) * 1994-08-28 1997-02-04 U.S. Philips Corporation Magnetic field sensor
US7190613B2 (en) * 2003-06-23 2007-03-13 Kabushiki Kaisha Toshiba Magnetic random access memory device having thermal agitation property and high write efficiency

Also Published As

Publication number Publication date
WO2007106071A2 (en) 2007-09-20

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