WO2007105855A1 - Shielding apparatus and manufacturing method thereof - Google Patents

Shielding apparatus and manufacturing method thereof Download PDF

Info

Publication number
WO2007105855A1
WO2007105855A1 PCT/KR2006/005463 KR2006005463W WO2007105855A1 WO 2007105855 A1 WO2007105855 A1 WO 2007105855A1 KR 2006005463 W KR2006005463 W KR 2006005463W WO 2007105855 A1 WO2007105855 A1 WO 2007105855A1
Authority
WO
WIPO (PCT)
Prior art keywords
molding layer
layer
substrate
conductor layer
shielding apparatus
Prior art date
Application number
PCT/KR2006/005463
Other languages
French (fr)
Inventor
Ki Min Lee
Original Assignee
Lg Innotek Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Innotek Co., Ltd filed Critical Lg Innotek Co., Ltd
Priority to EP06835207A priority Critical patent/EP1994814A4/en
Priority to US12/282,317 priority patent/US20090086461A1/en
Priority to CN2006800538639A priority patent/CN101401499B/en
Publication of WO2007105855A1 publication Critical patent/WO2007105855A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K5/00Casings, cabinets or drawers for electric apparatus
    • H05K5/06Hermetically-sealed casings
    • H05K5/064Hermetically-sealed casings sealed by potting, e.g. waterproof resin poured in a rigid casing
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007Casings
    • H05K9/0049Casings being metallic containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48153Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/48195Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01028Nickel [Ni]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01058Cerium [Ce]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01068Erbium [Er]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19042Component type being an inductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227Other objects, e.g. metallic pieces
    • H05K2201/10287Metal wires as connectors or conductors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227Other objects, e.g. metallic pieces
    • H05K2201/10295Metallic connector elements partly mounted in a hole of the PCB
    • H05K2201/10303Pin-in-hole mounted pins
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • H05K3/284Applying non-metallic protective coatings for encapsulating mounted components
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making

Definitions

  • the present invention relates to a shielding apparatus and a manufacturing method thereof.
  • Mobile communication terminals such as a cell phone, a personal digital assistant
  • PDA personal digital assistant
  • PCB printed circuit board
  • a radio frequency (RF) integrated module is exposed to severe electromagnetic interference.
  • the electromagnetic interference (EMI) has bad influences upon performances of the electronic devices constituting the integrated module.
  • the EMI means undesirable radiated emission (RE) or undesirable conducted emission (CE) of an electromagnetic signal from electronic devices.
  • the EMI causes problems in performances of adjacent electronic devices to deteriorate an integrated module and causes a malfunction of an apparatus including the electronic devices therein.
  • the CE is performed when electromagnetic noise mainly having frequency lower than 30 MHz is transmitted through a medium such as a signal line and a power line.
  • the RE is performed when electromagnetic noise mainly having frequency greater than 30 MHz is radiated to the air. Accordingly, the RE has a wider radiation range than that of the CE.
  • FIGs. 1 and 2 are views illustrating a shielding apparatus and a manufacturing method thereof according to a related art.
  • PCB 100 and a junction channel 102 is formed in the PCB 100.
  • junction part 142 which will be inserted into the junction channel 102 is formed in a shield can 140.
  • solder paste 10 is discharged in the junction channel 102 of the PCB 100 using a dispenser 120 (Sl 10).
  • the junction part 142 of the shield can 140 is moved over the junction channel [13] After that, the solder paste 10 is cured by a reflow treatment to couple the shield can
  • solder paste 10 In the shielding apparatus and the manufacturing method thereof, it is important to discharge a fixed amount of the solder paste 10 from the dispenser 120. If the amount of the solder paste 10 is excessive, the solder paste 10 may be conducted to an electronic device 110, which may lead to a malfunction of an integrated module.
  • the related art shielding apparatus is formed to have a structure that a shield can 140 is coupled with a PCB 100, it is difficult to miniaturize. Disclosure of Invention Technical Problem
  • the embodiment of the present invention provides a shielding apparatus capable of preventing electromagnetic interference, and a manufacturing method for the same.
  • the embodiment of the present invention provides a shielding apparatus capable of protecting an electronic device from an external shock, and a manufacturing method for the same.
  • the embodiment of the present invention provides a shielding apparatus comprising a substrate on which an electronic device is mounted, a molding layer on the substrate, a conductor layer on a surface of the molding layer, and a ground member electrically connecting a ground terminal of the substrate with the conductor layer.
  • the embodiment of the present invention provides a manufacturing method of a shielding apparatus, the method comprises preparing a substrate on which an electronic device is mounted, forming a ground member electrically connected to a ground terminal of the substrate, forming a molding layer to cover the electronic device and a portion of the ground member, and forming a conductor layer on the molding layer such that the conductor layer is electrically connected to the ground member.
  • the embodiment of the present invention provides a shielding apparatus comprising a substrate on which an electronic device is mounted, a molding layer on the substrate to cover the electronic device, a conductor layer on the molding layer, and a conducting material formed to pass through the molding layer and connect the substrate with the conductor layer.
  • the embodiment of the present invention provides a shielding apparatus comprising a substrate on which an electronic device is mounted, a molding layer on the substrate to cover the electronic device, a conductor layer on the molding layer, and a wire in the molding layer to connect the substrate with the conductor layer.
  • FIGs. 1 and 2 are views illustrating a shielding apparatus and a manufacturing method thereof according to a related art
  • Fig. 3 is a cross-sectional view illustrating a shielding apparatus according to a first embodiment of the present invention
  • Fig. 4 is a cross-sectional view illustrating a shielding apparatus according to a second embodiment of the present invention
  • Fig. 5 is a flow chart illustrating a manufacturing method of a shielding apparatus according to an embodiment of the present invention.
  • Fig. 3 is a cross-sectional view illustrating a shielding apparatus according to a first embodiment of the present invention.
  • a shielding apparatus 200 according to the first embodiment of the present invention includes a molding layer 220, a conductor layer 210 and a metal pin 230.
  • Various metal patterns 280 such as a metal pattern for grounding, a metal pattern for bonding and a metal pattern for signal transmission are formed in a substrate on which the shielding apparatus 200 is mounted. Also, an electronic device 240 is mounted on a surface of the substrate.
  • the electronic device 240 is connected to the metal pattern 280 through a wire 250.
  • a PCB or a low temperature co-fired ceramic (LTCC) substrate may be used as the substrate 260.
  • the LTCC substrate is formed using a co-firing processing of a ceramic and a metal at a temperature range of 800 ⁇ 1000 0 C. That is, after mixing a ceramic and a glass of a low melting point and forming a green sheet having an adequate permittivity, a conductive paste made mainly from silver or copper is printed and stacked on the green sheet, and then the LTCC substrate is formed.
  • the LTCC substrate has a multi-layered structure and passive devices such as a capacitor, a resistor and an inductor are formed in the LTCC substrate to be conducted to a metal pattern or electronic devices on a surface of the substrate through via holes, which makes it possible to realize a highly integrated, slim and lightweight shielding apparatus.
  • the molding layer 220 protects electronic devices 240 from an external shock and fixes bonding parts to prevent short circuit between electronic devices 240.
  • the molding layer 220 may be formed of a synthetic resin such as epoxy and silicon.
  • the molding layer 220 may be formed using a dam and fill molding or a transfer molding.
  • the transfer molding is a molding method with a thermosetting resin, where a thermosetting resin that has been plasticized in a heating chamber is pressed into a mold cavity.
  • a thermosetting resin that has been plasticized in a heating chamber is pressed into a mold cavity.
  • a viscous thermosetting resin fills the molding region and then is cured. After that, the partition wall is removed.
  • the molding layer 220 is formed to have a height of 500 ⁇ 1000 D up from a top surface of the substrate.
  • the conductor layer 210 may be formed on a surface of the molding layer 220 using plating.
  • the conductor layer 210 may be formed on an entire surface of the molding layer 220 including a top surface and side surfaces of the molding layer 220.
  • the conductor layer 210 may also be formed only on a portion of the molding layer 220 according to a predetermined pattern.
  • the conductor layer 210 is a shield layer serving as a metal can. Because the conductor layer 210 is formed using plating, it may have a fine thickness in comparison with a metal can.
  • the conductor layer 210 may be formed by sputtering a metal under the atmosphere of an injected active gas or depositing a metal film using a high current supplied through an electrode.
  • the conductor layer 210 may be a multiple layer for reasons of adhesion to the molding layer 220 and solidity of the resultant structure.
  • the conductor layer 210 may also include sequentially plated layers 216, 214 and 212 of Cu, Ni and Au.
  • the conductor layer 210 has a thickness of approximately 20 D whereas the layers of
  • Cu 216, Ni 214 and Au 212 have thicknesses of approximately 10 ⁇ 15 D, 5 ⁇ 1OD and 0.1 ⁇ 0.5 D, respectively.
  • the Cu layer 216 provides an excellent RF shielding effect
  • the Ni layer 214 provides an excellent interlay er adhesion
  • the Au layer 212 provides an excellent solidity to protect the conductor layer 210 against damage caused by a shock or a friction.
  • a thickness of the conductor layer 210 may be determined in consideration of a skin depth.
  • the skin depth is an index of a depth where a high frequency signal flows along a surface of a conductor.
  • the skin depth varies with the conductor and a frequency band.
  • the conductor layer 210 may be formed to be thicker than the skin depth so that a high frequency signal therein may not be radiated out of the conductor layer, and thus an EMI may not be caused.
  • the high frequency signal has a frequency of 1 GHz
  • the Au layer has a skin depth of 2.49 D
  • the Cu layer has a skin depth of 3.12 D
  • the Ni layer has a skin depth of 4.11 D.
  • a shielding apparatus has the following advantages: a size thereof is significantly decreased; a physical adhesive strength is enhanced; and an EMI is prevented effectively.
  • the conductor layer 210 is grounded in order to discharge shielded electromagnetic wave.
  • the conductor layer 210 may be electrically connected to a metal pattern 280 for grounding of the substrate 260, through a metal pin 230.
  • the metal pin 230 is formed through a molding layer 220 and is electrically connected to both the conductor layer 210 and the metal pattern 280 for grounding of the substrate 260.
  • the metal pin 230 may be formed to penetrate the metal pattern 280 for grounding and be fixed on the substrate 260.
  • the metal pin 230 may also be formed to be inserted and fixed in a via hole 270 that is electrically connected to the metal pattern 280 for grounding of the substrate 260 as shown in Fig. 3.
  • FIG. 4 is a cross-sectional view illustrating a shielding apparatus according to a second embodiment of the present invention.
  • the shielding apparatus includes a molding layer 320, a conductor layer 310 and a wire 350.
  • the conductor layer 310 is electrically connected to the metal pattern 380 for grounding through a wire.
  • the conductor layer 310 may be formed on an entire surface of the molding layer
  • the conductor layer 310 may also be formed only on a portion of the molding layer 320 according to a predetermined pattern.
  • the wire 350 connects a ground terminal of an electronic device 340 to a metal pattern 380 on the substrate 360.
  • a length of the wire 350 is adjusted such that the wire 350 has a parabolic shape and a portion of the wire 350 is in contact with the conductor layer 310 in order to electrically connect the wire 350 to the conductor layer 310.
  • a portion of the wire 350 may be in contact with the conductor layer 310 whereas another portion of the wire 350 is in contact with a via hole that is electrically connected to a metal pattern 380 for grounding.
  • the wire 350 may be formed of gold. A length of the wire 350 is adjusted such that the wire 350 may not extrude out of the conductor layer 310.
  • FIG. 5 is a flow chart illustrating a manufacturing method of shielding apparatuses
  • a substrate 260 having a multi-layered structure is formed and metal patterns 280 including a metal pattern for grounding is formed on the substrate (S200). Also, a via hole 270 is formed in the substrate 260 (S210).
  • Various electronic devices 240 such as a passive device and an active device are mounted on the substrate 260 (S220). Also, a process for bonding a wire 250 is performed on the substrate 260.
  • the metal pin 230 may be inserted into the via hole 270 for grounding of the substrate 260 using a hammering (S230).
  • the surface processing is designed for making a surface of the molding layer 220 smooth so that a plated conductor layer 210 could strongly adhere to a surface of the molding layer 220.
  • a portion of the metal pin 230 extruding out of the surface of the molding layer 220 may be processed together, so that the metal pin 230 does not extrude out of the conductor layer 210.
  • the grinding or polishing may be omitted, and the cutting off of the portion of the metal pin 230 may also be omitted.
  • the molding layer 220 may be grinded or polished so that a surface of the molding layer 220 may be smooth and a portion of the metal pin 230 may extrude out of the molding layer 220. Thereby, the conductor layer 210, when it is deposited, may be electrically connected to the metal pin 230.
  • a manufacturing method of a shielding apparatus 300 according to the second embodiment of the present invention is described as follows. [70] A substrate 360 having a multi-layered structure is formed and metal patterns 380 including a metal pattern for grounding is formed on the substrate (S200). Also, a via hole 370 is formed in the substrate 360 (S210). [71] Various electronic devices 340 such as a passive device and an active device are mounted on the substrate 360 (S220).
  • a process for bonding a wire is performed on the substrate 260.
  • the wire is formed so that both terminals of the wire 350 are connected to a ground terminal of an electronic device 340 and a metal pattern 380 for grounding of the substrate 360, respectively.
  • the wire is formed to have an adequate length so that a portion of the wire 350 may be electrically connected to a conductor layer 310 formed outside the molding layer 320 afterwards (S230).
  • S230 a dam and fill molding or a transfer molding
  • a surface processing such as grinding and polishing is performed on the molding layer 320 (S250).
  • the surface processing is designed for making a surface of the molding layer 320 smooth so that a plated conductor layer 310 could strongly adhere to a surface of the molding layer 320.
  • a surface of the molding layer 320 is grinded or polished, a portion of the wire 350 extruding out of the surface of the molding layer 320 may be grinded or polished together, so that the wire 350 does not extrude out of the conductor layer 310.
  • the grinding or polishing may be omitted, and the cutting off of the portion of the wire 350 may also be omitted.
  • the molding layer 320 may be grinded or polished so that a surface of the molding layer 320 may be smooth and a portion of the wire 350 may extrude out of the molding layer 320.
  • the conductor layer 310 when it is deposited, may be electrically connected to the wire 350.
  • copper 216, nickel 214 and gold 212 are sequentially deposited on a surface of the molding layer 320 to form a multi-layered conductor layer 310 and thus to form a shielding apparatus 300 according to an embodiment of the present invention (S260).
  • the embodiment of the present invention can be applied to an electronic apparatus mounting an electronic deivce therein and a manufacturing method thereof.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

A shielding apparatus is provided. The shielding apparatus comprises a substrate on which an electronic device is mounted, a molding layer on the substrate, a conductor layer on a surface of the molding layer, and a ground member electrically connecting a ground terminal of the substrate with the conductor layer.

Description

Description
SHIELDING APPARATUS AND MANUFACTURING METHOD
THEREOF
Technical Field
[I] The present invention relates to a shielding apparatus and a manufacturing method thereof.
Background Art
[2] Mobile communication terminals such as a cell phone, a personal digital assistant
(PDA) and a smart phone, a variety of communication equipments and media players have various kinds of electronic devices therein. The electronic devices are formed into an integrated module in a printed circuit board (PCB).
[3] Particularly, a radio frequency (RF) integrated module is exposed to severe electromagnetic interference. The electromagnetic interference (EMI) has bad influences upon performances of the electronic devices constituting the integrated module.
[4] The EMI means undesirable radiated emission (RE) or undesirable conducted emission (CE) of an electromagnetic signal from electronic devices.
[5] The EMI causes problems in performances of adjacent electronic devices to deteriorate an integrated module and causes a malfunction of an apparatus including the electronic devices therein.
[6] The CE is performed when electromagnetic noise mainly having frequency lower than 30 MHz is transmitted through a medium such as a signal line and a power line. On the contrary, the RE is performed when electromagnetic noise mainly having frequency greater than 30 MHz is radiated to the air. Accordingly, the RE has a wider radiation range than that of the CE.
[7] Various researches are actively in progress to solve the above-mentioned problems and to protect electronic devices from external shocks.
[8] Figs. 1 and 2 are views illustrating a shielding apparatus and a manufacturing method thereof according to a related art.
[9] Referring to Figs. 1 and 2, a plurality of electronic devices 110 are mounted on a
PCB 100 and a junction channel 102 is formed in the PCB 100.
[10] Also, a junction part 142 which will be inserted into the junction channel 102 is formed in a shield can 140.
[I I] After the PCB 100 is fixed on a jig (SlOO), a solder paste 10 is discharged in the junction channel 102 of the PCB 100 using a dispenser 120 (Sl 10).
[12] Then, the junction part 142 of the shield can 140 is moved over the junction channel [13] After that, the solder paste 10 is cured by a reflow treatment to couple the shield can
140 with the PCB 100 (S130).
[14] In the shielding apparatus and the manufacturing method thereof, it is important to discharge a fixed amount of the solder paste 10 from the dispenser 120. If the amount of the solder paste 10 is excessive, the solder paste 10 may be conducted to an electronic device 110, which may lead to a malfunction of an integrated module.
[15] Also, because the related art shielding apparatus is formed to have a structure that a shield can 140 is coupled with a PCB 100, it is difficult to miniaturize. Disclosure of Invention Technical Problem
[16] The embodiment of the present invention provides a shielding apparatus capable of preventing electromagnetic interference, and a manufacturing method for the same.
[17] The embodiment of the present invention provides a shielding apparatus capable of protecting an electronic device from an external shock, and a manufacturing method for the same. Technical Solution
[18] The embodiment of the present invention provides a shielding apparatus comprising a substrate on which an electronic device is mounted, a molding layer on the substrate, a conductor layer on a surface of the molding layer, and a ground member electrically connecting a ground terminal of the substrate with the conductor layer.
[19] The embodiment of the present invention provides a manufacturing method of a shielding apparatus, the method comprises preparing a substrate on which an electronic device is mounted, forming a ground member electrically connected to a ground terminal of the substrate, forming a molding layer to cover the electronic device and a portion of the ground member, and forming a conductor layer on the molding layer such that the conductor layer is electrically connected to the ground member.
[20] The embodiment of the present invention provides a shielding apparatus comprising a substrate on which an electronic device is mounted, a molding layer on the substrate to cover the electronic device, a conductor layer on the molding layer, and a conducting material formed to pass through the molding layer and connect the substrate with the conductor layer.
[21] The embodiment of the present invention provides a shielding apparatus comprising a substrate on which an electronic device is mounted, a molding layer on the substrate to cover the electronic device, a conductor layer on the molding layer, and a wire in the molding layer to connect the substrate with the conductor layer.
Advantageous Effects
[22] According to the embodiment of the present invention, it is possible to protect an electronic device from an external shock and to effectively prevent electromagnetic interference. Brief Description of the Drawings
[23] Figs. 1 and 2 are views illustrating a shielding apparatus and a manufacturing method thereof according to a related art; [24] Fig. 3 is a cross-sectional view illustrating a shielding apparatus according to a first embodiment of the present invention; [25] Fig. 4 is a cross-sectional view illustrating a shielding apparatus according to a second embodiment of the present invention; and [26] Fig. 5 is a flow chart illustrating a manufacturing method of a shielding apparatus according to an embodiment of the present invention.
Best Mode for Carrying Out the Invention [27] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to accompanying drawings. [28] Fig. 3 is a cross-sectional view illustrating a shielding apparatus according to a first embodiment of the present invention. [29] Referring to Fig. 3, a shielding apparatus 200 according to the first embodiment of the present invention includes a molding layer 220, a conductor layer 210 and a metal pin 230. [30] Various metal patterns 280 such as a metal pattern for grounding, a metal pattern for bonding and a metal pattern for signal transmission are formed in a substrate on which the shielding apparatus 200 is mounted. Also, an electronic device 240 is mounted on a surface of the substrate. The electronic device 240 is connected to the metal pattern 280 through a wire 250. [31] A PCB or a low temperature co-fired ceramic (LTCC) substrate may be used as the substrate 260. [32] The LTCC substrate is formed using a co-firing processing of a ceramic and a metal at a temperature range of 800 ~ 10000C. That is, after mixing a ceramic and a glass of a low melting point and forming a green sheet having an adequate permittivity, a conductive paste made mainly from silver or copper is printed and stacked on the green sheet, and then the LTCC substrate is formed. [33] The LTCC substrate has a multi-layered structure and passive devices such as a capacitor, a resistor and an inductor are formed in the LTCC substrate to be conducted to a metal pattern or electronic devices on a surface of the substrate through via holes, which makes it possible to realize a highly integrated, slim and lightweight shielding apparatus. [34] The molding layer 220 protects electronic devices 240 from an external shock and fixes bonding parts to prevent short circuit between electronic devices 240.
[35] The molding layer 220 may be formed of a synthetic resin such as epoxy and silicon. The molding layer 220 may be formed using a dam and fill molding or a transfer molding.
[36] The transfer molding is a molding method with a thermosetting resin, where a thermosetting resin that has been plasticized in a heating chamber is pressed into a mold cavity. In the dam and fill molding, on the other hand, after forming a partition wall around the molding region, a viscous thermosetting resin fills the molding region and then is cured. After that, the partition wall is removed.
[37] Meanwhile, the molding layer 220 is formed to have a height of 500 ~ 1000 D up from a top surface of the substrate.
[38] The conductor layer 210 may be formed on a surface of the molding layer 220 using plating. The conductor layer 210 may be formed on an entire surface of the molding layer 220 including a top surface and side surfaces of the molding layer 220. The conductor layer 210 may also be formed only on a portion of the molding layer 220 according to a predetermined pattern.
[39] The conductor layer 210 is a shield layer serving as a metal can. Because the conductor layer 210 is formed using plating, it may have a fine thickness in comparison with a metal can.
[40] For example, the conductor layer 210 may be formed by sputtering a metal under the atmosphere of an injected active gas or depositing a metal film using a high current supplied through an electrode.
[41] According to an embodiment of the present invention, the conductor layer 210 may be a multiple layer for reasons of adhesion to the molding layer 220 and solidity of the resultant structure. The conductor layer 210 may also include sequentially plated layers 216, 214 and 212 of Cu, Ni and Au.
[42] The conductor layer 210 has a thickness of approximately 20 D whereas the layers of
Cu 216, Ni 214 and Au 212 have thicknesses of approximately 10 ~ 15 D, 5 ~ 1OD and 0.1 ~ 0.5 D, respectively.
[43] The Cu layer 216 provides an excellent RF shielding effect, the Ni layer 214 provides an excellent interlay er adhesion and the Au layer 212 provides an excellent solidity to protect the conductor layer 210 against damage caused by a shock or a friction.
[44] A thickness of the conductor layer 210 may be determined in consideration of a skin depth. The skin depth is an index of a depth where a high frequency signal flows along a surface of a conductor. The skin depth varies with the conductor and a frequency band.
[45] That is, the conductor layer 210 may be formed to be thicker than the skin depth so that a high frequency signal therein may not be radiated out of the conductor layer, and thus an EMI may not be caused. For example, when the high frequency signal has a frequency of 1 GHz, the Au layer has a skin depth of 2.49 D, the Cu layer has a skin depth of 3.12 D and the Ni layer has a skin depth of 4.11 D.
[46] Therefore, a shielding apparatus according to the first embodiment of the present invention has the following advantages: a size thereof is significantly decreased; a physical adhesive strength is enhanced; and an EMI is prevented effectively.
[47] Meanwhile, the conductor layer 210 is grounded in order to discharge shielded electromagnetic wave. The conductor layer 210 may be electrically connected to a metal pattern 280 for grounding of the substrate 260, through a metal pin 230.
[48] That is, the metal pin 230 is formed through a molding layer 220 and is electrically connected to both the conductor layer 210 and the metal pattern 280 for grounding of the substrate 260.
[49] The metal pin 230 may be formed to penetrate the metal pattern 280 for grounding and be fixed on the substrate 260. The metal pin 230 may also be formed to be inserted and fixed in a via hole 270 that is electrically connected to the metal pattern 280 for grounding of the substrate 260 as shown in Fig. 3.
[50] Fig. 4 is a cross-sectional view illustrating a shielding apparatus according to a second embodiment of the present invention.
[51] Referring to Fig. 4, the shielding apparatus includes a molding layer 320, a conductor layer 310 and a wire 350.
[52] The conductor layer 310 is electrically connected to the metal pattern 380 for grounding through a wire.
[53] The conductor layer 310 may be formed on an entire surface of the molding layer
320 including a top surface and side surfaces of the molding layer 320. The conductor layer 310 may also be formed only on a portion of the molding layer 320 according to a predetermined pattern.
[54] The wire 350 connects a ground terminal of an electronic device 340 to a metal pattern 380 on the substrate 360. A length of the wire 350 is adjusted such that the wire 350 has a parabolic shape and a portion of the wire 350 is in contact with the conductor layer 310 in order to electrically connect the wire 350 to the conductor layer 310.
[55] Also, although not shown, a portion of the wire 350 may be in contact with the conductor layer 310 whereas another portion of the wire 350 is in contact with a via hole that is electrically connected to a metal pattern 380 for grounding.
[56] The wire 350 may be formed of gold. A length of the wire 350 is adjusted such that the wire 350 may not extrude out of the conductor layer 310.
[57] Hereinafter, manufacturing methods of electromagnetic shielding apparatuses 200 and 300 according to the first and second embodiments of the present invention will now be described. The manufacturing methods of electromagnetic shielding apparatuses according to the first and second embodiments of the present invention will be described together with reference to Fig. 5 because their manufacturing processes are very similar.
[58] Fig. 5 is a flow chart illustrating a manufacturing method of shielding apparatuses
200 and 300 according to an embodiment of the present invention.
[59] In the first place, a manufacturing method of a shielding apparatus 200 according to the first embodiment of the present invention is described as follows.
[60] A substrate 260 having a multi-layered structure is formed and metal patterns 280 including a metal pattern for grounding is formed on the substrate (S200). Also, a via hole 270 is formed in the substrate 260 (S210).
[61] Various electronic devices 240 such as a passive device and an active device are mounted on the substrate 260 (S220). Also, a process for bonding a wire 250 is performed on the substrate 260.
[62] After that, a metal pin process is performed. The metal pin 230 may be inserted into the via hole 270 for grounding of the substrate 260 using a hammering (S230).
[63] Then, after forming a molding layer 220 to a predetermined height using a dam and fill molding or a transfer molding (S240), a portion of the metal pin 230 extruding out of the molding layer 220 is cut off in close proximity to a top surface of the molding layer 220.
[64] Afterwards, a surface processing such as grinding and polishing is performed on the molding layer 220 (S250).
[65] The surface processing is designed for making a surface of the molding layer 220 smooth so that a plated conductor layer 210 could strongly adhere to a surface of the molding layer 220. When a surface of the molding layer 220 is processed, a portion of the metal pin 230 extruding out of the surface of the molding layer 220 may be processed together, so that the metal pin 230 does not extrude out of the conductor layer 210.
[66] Meanwhile, the grinding or polishing may be omitted, and the cutting off of the portion of the metal pin 230 may also be omitted.
[67] When the metal pin 230 is formed to be lower than the molding layer 220, the molding layer 220 may be grinded or polished so that a surface of the molding layer 220 may be smooth and a portion of the metal pin 230 may extrude out of the molding layer 220. Thereby, the conductor layer 210, when it is deposited, may be electrically connected to the metal pin 230.
[68] Finally, copper 216, nickel 214 and gold 212 are sequentially deposited on the surface of the molding layer 220 to form a multi-layered conductor layer 210 and thus to form a shielding apparatus 200 according to an embodiment of the present invention (S260). [69] In the next place, a manufacturing method of a shielding apparatus 300 according to the second embodiment of the present invention is described as follows. [70] A substrate 360 having a multi-layered structure is formed and metal patterns 380 including a metal pattern for grounding is formed on the substrate (S200). Also, a via hole 370 is formed in the substrate 360 (S210). [71] Various electronic devices 340 such as a passive device and an active device are mounted on the substrate 360 (S220). Also, a process for bonding a wire is performed on the substrate 260. [72] Here, the wire is formed so that both terminals of the wire 350 are connected to a ground terminal of an electronic device 340 and a metal pattern 380 for grounding of the substrate 360, respectively. Also, the wire is formed to have an adequate length so that a portion of the wire 350 may be electrically connected to a conductor layer 310 formed outside the molding layer 320 afterwards (S230). [73] Then, after forming a molding layer 320 to a predetermined height using a dam and fill molding or a transfer molding (S240), a portion of the wire 350 extruding out of the molding layer 320 is cut off in close proximity to a top surface of the molding layer
320. [74] Afterwards, a surface processing such as grinding and polishing is performed on the molding layer 320 (S250). [75] The surface processing is designed for making a surface of the molding layer 320 smooth so that a plated conductor layer 310 could strongly adhere to a surface of the molding layer 320. When a surface of the molding layer 320 is grinded or polished, a portion of the wire 350 extruding out of the surface of the molding layer 320 may be grinded or polished together, so that the wire 350 does not extrude out of the conductor layer 310. [76] Meanwhile, the grinding or polishing may be omitted, and the cutting off of the portion of the wire 350 may also be omitted. [77] When the wire 350 is formed to be lower than the molding layer 320, the molding layer 320 may be grinded or polished so that a surface of the molding layer 320 may be smooth and a portion of the wire 350 may extrude out of the molding layer 320.
Thereby, the conductor layer 310, when it is deposited, may be electrically connected to the wire 350. [78] Finally, copper 216, nickel 214 and gold 212 are sequentially deposited on a surface of the molding layer 320 to form a multi-layered conductor layer 310 and thus to form a shielding apparatus 300 according to an embodiment of the present invention (S260).
Mode for the Invention [79] While the present invention has been described and illustrated herein with reference to the preferred embodiments thereof, it will be apparent to those skilled in the art that various modifications and variations can be made therein without departing from the spirit and scope of the invention. [80] Thus, it is intended that the present invention cover the modifications and variations of this invention that come within the scope of the appended claims and their equivalents.
Industrial Applicability [81] The embodiment of the present invention can be applied to an electronic apparatus mounting an electronic deivce therein and a manufacturing method thereof.

Claims

Claims
[I] A shielding apparatus comprising: a substrate on which an electronic device is mounted; a molding layer on the substrate; a conductor layer on a surface of the molding layer; and a ground member electrically connecting a ground terminal of the substrate with the conductor layer. [2] The shielding apparatus according to claim 1, wherein the ground member is formed to pass through the molding layer. [3] The shielding apparatus according to claim 1, wherein the ground member comprises a metal pin. [4] The shielding apparatus according to claim 1, wherein the ground member comprises a wire. [5] The shielding apparatus according to claim 1, wherein the ground member electrically connects the electronic device, the conductor layer and the ground terminal. [6] The shielding apparatus according to claim 1, wherein the conductor layer is formed on the surface including a top surface and side surfaces of the molding layer. [7] The shielding apparatus according to claim 1, wherein the conductor layer is formed on a portion of the molding layer according to a predetermined pattern. [8] The shielding apparatus according to claim 1, wherein the ground terminal comprises one of a via hole and a metal pattern. [9] The shielding apparatus according to claim 1, wherein a plurality of layers made from a plurality of metals constitute the conductor layer. [10] The shielding apparatus according to claim 1, wherein the conductor layer is formed of copper, nickel and gold.
[I I] A manufacturing method of a shielding apparatus, the method comprising: preparing a substrate on which an electronic device is mounted; forming a ground member electrically connected to a ground terminal of the substrate; forming a molding layer to cover the electronic device and a portion of the ground member; and forming a conductor layer on the molding layer such that the conductor layer is electrically connected to the ground member. [12] The method according to claim 11, wherein the forming of the molding layer comprises forming a molding layer to completely cover the ground member and removing a portion of the molding layer such that a portion of the ground member is exposed out of the molding layer. [13] The method according to claim 12, wherein the removing of the portion of the molding layer comprises surface processing the molding layer using one of grinding and polishing. [14] The method according to claim 11, wherein the ground terminal comprises one of a via hole and a metal pattern. [15] The method according to claim 11, wherein the ground member comprises a metal pin. [16] The method according to claim 11, wherein the ground member comprises a wire electrically connecting the electronic device with the ground terminal. [17] The method according to claim 11, wherein the forming of the conductor layer comprises plating metal on an outer surface of the molding layer. [18] The method according to claim 12, wherein the forming of the conductor layer comprises sequentially plating a plurality of metals on a surface of the molding layer. [19] A shielding apparatus comprising: a substrate on which an electronic device is mounted; a molding layer on the substrate to cover the electronic device; a conductor layer on the molding layer; and a conducting material formed to pass through the molding layer and connect the substrate with the conductor layer. [20] A shielding apparatus comprising: a substrate on which an electronic device is mounted; a molding layer on the substrate to cover the electronic device; a conductor layer on the molding layer; and a wire in the molding layer to connect the substrate with the conductor layer.
PCT/KR2006/005463 2006-03-16 2006-12-14 Shielding apparatus and manufacturing method thereof WO2007105855A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP06835207A EP1994814A4 (en) 2006-03-16 2006-12-14 Shielding apparatus and manufacturing method thereof
US12/282,317 US20090086461A1 (en) 2006-03-16 2006-12-14 Shielding Apparatus and Manufacturing Method Thereof
CN2006800538639A CN101401499B (en) 2006-03-16 2006-12-14 Shielding apparatus and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2006-0024201 2006-03-16
KR1020060024201A KR100737098B1 (en) 2006-03-16 2006-03-16 Shield device of electromagnetic inteference and production progress thereof

Publications (1)

Publication Number Publication Date
WO2007105855A1 true WO2007105855A1 (en) 2007-09-20

Family

ID=38503668

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2006/005463 WO2007105855A1 (en) 2006-03-16 2006-12-14 Shielding apparatus and manufacturing method thereof

Country Status (5)

Country Link
US (1) US20090086461A1 (en)
EP (1) EP1994814A4 (en)
KR (1) KR100737098B1 (en)
CN (1) CN101401499B (en)
WO (1) WO2007105855A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100877551B1 (en) * 2008-05-30 2009-01-07 윤점채 Semiconductor package capable of shielding electromagnetic wave and manufacturing method thereof, and jig
DE102011088256A1 (en) * 2011-12-12 2013-06-13 Zf Friedrichshafen Ag Multilayer printed circuit board and arrangement with such
JP5950617B2 (en) * 2012-02-22 2016-07-13 三菱電機株式会社 Shield structure and electronic device
KR101741648B1 (en) * 2016-01-22 2017-05-31 하나 마이크론(주) Semiconductor package having electromagnetic waves shielding means, and method for manufacturing the same
US10424545B2 (en) * 2017-10-17 2019-09-24 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
CN111627890A (en) * 2020-06-08 2020-09-04 东莞记忆存储科技有限公司 IC electromagnetic shielding layer grounding structure and processing technique thereof

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03218088A (en) * 1990-01-23 1991-09-25 Toshiba Corp Thermal-stress relieving type hybrid integrated circuit
EP0692823A1 (en) * 1994-07-11 1996-01-17 Sun Microsystems, Inc. Ball grid array package for an integated circuit
US5625166A (en) * 1994-11-01 1997-04-29 Intel Corporation Structure of a thermally and electrically enhanced plastic pin grid array (PPGA) package for high performance devices with wire bond interconnect
JP2000209026A (en) * 1999-01-12 2000-07-28 Hitachi Ltd High frequency transmitter-receiver and on-vehicle radar system
JP2002027638A (en) * 2000-07-11 2002-01-25 Unisia Jecs Corp Electronic component attachment base and manufacturing method therefor
US6417747B1 (en) * 2001-08-23 2002-07-09 Raytheon Company Low cost, large scale RF hybrid package for simple assembly onto mixed signal printed wiring boards
US6449168B1 (en) * 1998-10-26 2002-09-10 Telefonaktiebolaget Lm Ericcson (Publ) Circuit board and a method for manufacturing the same
US20020153582A1 (en) 2001-03-16 2002-10-24 Matsushita Electric Industrial Co., Ltd High-frequency module and method for manufacturing the same
US6566596B1 (en) 1997-12-29 2003-05-20 Intel Corporation Magnetic and electric shielding of on-board devices
WO2005093833A1 (en) 2004-03-04 2005-10-06 Skyworks Solutions, Inc. Overmolded semiconductor package with an integrated emi and rfi shield

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4831210A (en) * 1987-12-02 1989-05-16 Macdermid, Incorporated Shields for electromagnetic radiation
JP3218088B2 (en) * 1992-07-24 2001-10-15 ブラザー工業株式会社 Printer
JP3824742B2 (en) 1997-07-04 2006-09-20 シチズン電子株式会社 Electronic circuit package structure
JPH1174752A (en) 1997-08-29 1999-03-16 Kyocera Corp Surface acoustic wave device
JP2001244688A (en) 2000-02-28 2001-09-07 Kyocera Corp High-frequency module component and its manufacturing method
JP2003249607A (en) * 2002-02-26 2003-09-05 Seiko Epson Corp Semiconductor device and manufacturing method therefor, circuit board and electronic device
JP4195975B2 (en) * 2002-10-16 2008-12-17 パナソニック株式会社 High frequency equipment
JP4350366B2 (en) 2002-12-24 2009-10-21 パナソニック株式会社 Electronic component built-in module
KR100538763B1 (en) * 2003-06-25 2005-12-23 한국 고덴시 주식회사 Covered structure of remote control receipt module
JP4163098B2 (en) * 2003-12-24 2008-10-08 日本メクトロン株式会社 Electromagnetic shield type flexible circuit board
JP4903576B2 (en) * 2004-10-28 2012-03-28 京セラ株式会社 Electronic component module and wireless communication device
US7365273B2 (en) * 2004-12-03 2008-04-29 Delphi Technologies, Inc. Thermal management of surface-mount circuit devices
US20070163802A1 (en) * 2006-01-19 2007-07-19 Triquint Semiconductors, Inc. Electronic package including an electromagnetic shield

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03218088A (en) * 1990-01-23 1991-09-25 Toshiba Corp Thermal-stress relieving type hybrid integrated circuit
EP0692823A1 (en) * 1994-07-11 1996-01-17 Sun Microsystems, Inc. Ball grid array package for an integated circuit
US5625166A (en) * 1994-11-01 1997-04-29 Intel Corporation Structure of a thermally and electrically enhanced plastic pin grid array (PPGA) package for high performance devices with wire bond interconnect
US6566596B1 (en) 1997-12-29 2003-05-20 Intel Corporation Magnetic and electric shielding of on-board devices
US6449168B1 (en) * 1998-10-26 2002-09-10 Telefonaktiebolaget Lm Ericcson (Publ) Circuit board and a method for manufacturing the same
JP2000209026A (en) * 1999-01-12 2000-07-28 Hitachi Ltd High frequency transmitter-receiver and on-vehicle radar system
JP2002027638A (en) * 2000-07-11 2002-01-25 Unisia Jecs Corp Electronic component attachment base and manufacturing method therefor
US20020153582A1 (en) 2001-03-16 2002-10-24 Matsushita Electric Industrial Co., Ltd High-frequency module and method for manufacturing the same
US6417747B1 (en) * 2001-08-23 2002-07-09 Raytheon Company Low cost, large scale RF hybrid package for simple assembly onto mixed signal printed wiring boards
WO2005093833A1 (en) 2004-03-04 2005-10-06 Skyworks Solutions, Inc. Overmolded semiconductor package with an integrated emi and rfi shield

Also Published As

Publication number Publication date
KR100737098B1 (en) 2007-07-06
CN101401499A (en) 2009-04-01
US20090086461A1 (en) 2009-04-02
EP1994814A1 (en) 2008-11-26
CN101401499B (en) 2012-01-25
EP1994814A4 (en) 2010-02-17

Similar Documents

Publication Publication Date Title
JP6489182B2 (en) Wireless module with integrated antenna
KR101616625B1 (en) Semiconductor package and method of manufacturing the same
US7125744B2 (en) High-frequency module and method for manufacturing the same
US7958629B2 (en) Overmolded electronic module with an integrated electromagnetic shield using SMT shield wall components
US8841759B2 (en) Semiconductor package and manufacturing method thereof
US20090086461A1 (en) Shielding Apparatus and Manufacturing Method Thereof
KR101066885B1 (en) Mobile phone case within antenna
US8682403B2 (en) Filter having impedance matching circuits
GB2318218A (en) Inductive device
KR100844790B1 (en) Electromagnetic wave shielding apparatus, high-frequency module with thereof and manufacturing method thereof
WO2008062982A1 (en) Electromagnetic shielding device, radio frequency module having the same, and method of manufacturing the radio frequency module
KR20060089564A (en) Circuit board surface mount structure of shield can and mounting process thereof
KR20080046864A (en) Electromagnetic wave shielding apparatus, high-frequency module with thereof and manufacturing method thereof
KR101338563B1 (en) Method for high-frequency module
KR100844791B1 (en) Electromagnetic wave shielding apparatus, high-frequency module with thereof and manufacturing method thereof
CN112038779B (en) Antenna semiconductor package device and method of manufacturing the same
KR102207269B1 (en) Semiconductor Package Module and Method of Manufacturing for Semiconductor Package Module
KR100550917B1 (en) Saw duplexer using pcb substrate
KR20060064052A (en) Wideband antenna module for the high-frequency and microwave range
WO2021149491A1 (en) Wiring substrate and electronic device
KR101420368B1 (en) Conductive contactor for absorbing electromagnetic waves for surface mounting technology
KR20080046049A (en) Electromagnetic wave shielding apparatus, high-frequency module with thereof and manufacturing method thereof
KR101349504B1 (en) High-frequency module and manufacturing method thereof
KR20080078176A (en) Communication module of terminating structure of eletro-magnetic wave
CN116828698A (en) Electromagnetic shielding film, electromagnetic shielding package and preparation method thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 06835207

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12282317

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2006835207

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 200680053863.9

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE