WO2007103419A3 - Structures and designs for improved efficiency and reduced strain iii-nitride heterostructure semiconductor devices - Google Patents

Structures and designs for improved efficiency and reduced strain iii-nitride heterostructure semiconductor devices Download PDF

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Publication number
WO2007103419A3
WO2007103419A3 PCT/US2007/005806 US2007005806W WO2007103419A3 WO 2007103419 A3 WO2007103419 A3 WO 2007103419A3 US 2007005806 W US2007005806 W US 2007005806W WO 2007103419 A3 WO2007103419 A3 WO 2007103419A3
Authority
WO
WIPO (PCT)
Prior art keywords
structures
semiconductor devices
designs
improved efficiency
reduced strain
Prior art date
Application number
PCT/US2007/005806
Other languages
French (fr)
Other versions
WO2007103419A2 (en
Inventor
Sridhar Srinivasan
Fernando A Ponce
Original Assignee
Univ Arizona State
Sridhar Srinivasan
Fernando A Ponce
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Arizona State, Sridhar Srinivasan, Fernando A Ponce filed Critical Univ Arizona State
Publication of WO2007103419A2 publication Critical patent/WO2007103419A2/en
Publication of WO2007103419A3 publication Critical patent/WO2007103419A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

The present invention provides semiconductor structures, and methods for making semiconductor structures, comprising an InA1N and/or InA1GaN strain relief layer that have a lattice constant larger than that of a substrate film upon which it is grown such that it allows the growth of strain-free or low-strain semiconductor devices.
PCT/US2007/005806 2006-03-06 2007-03-06 Structures and designs for improved efficiency and reduced strain iii-nitride heterostructure semiconductor devices WO2007103419A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77969106P 2006-03-06 2006-03-06
US60/779,691 2006-03-06

Publications (2)

Publication Number Publication Date
WO2007103419A2 WO2007103419A2 (en) 2007-09-13
WO2007103419A3 true WO2007103419A3 (en) 2008-05-29

Family

ID=38475529

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/005806 WO2007103419A2 (en) 2006-03-06 2007-03-06 Structures and designs for improved efficiency and reduced strain iii-nitride heterostructure semiconductor devices

Country Status (1)

Country Link
WO (1) WO2007103419A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7720124B2 (en) * 2005-03-03 2010-05-18 Panasonic Corporation Semiconductor device and fabrication method thereof
US9159788B2 (en) 2013-12-31 2015-10-13 Industrial Technology Research Institute Nitride semiconductor structure
US10347834B2 (en) * 2018-03-22 2019-07-09 Intel Corporation Wafer-scale integration of vacancy centers for spin qubits
JP7109079B2 (en) * 2018-12-06 2022-07-29 学校法人 名城大学 Nitride semiconductor multilayer reflector
KR20220160890A (en) * 2021-05-28 2022-12-06 주식회사 아이브이웍스 Ⅲ-N semiconductor structure and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6906352B2 (en) * 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6906352B2 (en) * 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well

Also Published As

Publication number Publication date
WO2007103419A2 (en) 2007-09-13

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