WO2007076146A2

WO2007076146A2 - Compositions comprising novel copolymers and electronic devices made with such compositions

Info

Publication number: WO2007076146A2
Application number: PCT/US2006/049340
Authority: WO
Inventors: Nora Sabina Radu; Frederick P. Gentry; Gene M. Rossi; Gary A. Johansson
Original assignee: E. I. Du Pont De Nemours And Company
Priority date: 2005-12-27
Filing date: 2006-12-27
Publication date: 2007-07-05
Also published as: JP2009521591A; EP1971628B1; WO2007076146A3; EP1971628A2; KR20080081077A; KR101295484B1; EP1971628A4; JP5189990B2; US8440324B2; US20070228364A1

Abstract

The present invention relates to novel copolymers, compositions comprising novel copolymers, and electronic devices comprising at least one layer containing the copolymer.

Description

TITLE

COMPOSITIONS COMPRISING NOVEL COPOLYMERS AND ELECTRONIC DEVICES MADE WITH SUCH COMPOSITIONS

CROSS REFERENCE TO RELATED APPLICATION This application claims priority under 35 U. S. C. § 119(e) from U.S.

Provisional Application No. 60/754,962, filed on December 27, 2005, which is incorporated by reference as if fully set forth herein.

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to novel copolymers useful as hole transport materials in making electronic devices. The invention further relates to electronic devices having at least one active layer comprising such a hole transport copolymer. Background In organic photoactive electronic devices, such as organic light emitting diodes ("OLED"), that make up OLED displays, the organic active layer is sandwiched between two electrical contact layers in an OLED display. In an OLED the organic photoactive layer emits light through the light-transmitting electrical contact layer upon application of a voltage across the electrical contact layers.

It is well known to use organic electroluminescent compounds as the active component in light-emitting diodes. Simple organic molecules, conjugated polymers, and organometallic complexes have been used. Devices that use photoactive materials frequently include one or more charge transport layers, which are positioned between a photoactive (e.g., light-emitting) layer and a contact layer (hole-injecting contact layer). A device can contain two or more contact layers. A hole transport layer can be positioned between the photoactive layer and the hole-injecting contact layer. The hole-injecting contact layer may also be called the anode. An electron transport layer can be positioned between the photoactive layer and the electron-injecting contact layer. The electron- injecting contact layer may also be called the cathode.

There is a continuing need for charge transport materials for use in electronic devices. SUMMARY OF THE INVENTION

Provided are copolymers having repeating units derived from at least one first monomer selected from the group consisting of A1 to A5

and at least one second monomer selected from the group consisting of A1 to A5, B1 to B7, and C1 to C7,

B7

wherein:

R' = D, alkyl, fluoroalkyl, heteroalkyl, aryl, heteroaryl, alkoxy, fluoroalkoxy,

N(R¹¹¹J₂, R".

R" = reactive group

R'" = alkyl, fluoroalkyl, aryl

Ar, Ar' = independently phenylene, naphthylene, or biphenylene E = O, S₁ (SiR^ivR^v)n, <CR^ivR^v)_n, or combinations thereof, and can be different at each occurrence, wherein R^ιv and R^v are each independently selected from H, F, alkyl, aryl, alkoxy, aryloxy, fluoroalkyl, fluoroaryl, fluoroalkoxy, and fluoroaryloxy and wherein R^iv and R^v can, when taken together, form a non-aromatic ring, X = leaving group

Y = alkyl, heteroalkyl, R a = 0 to 4 b = 0 to 20 . m = 0 to 5 n = 1 to 20 q - 0 to 7; and further wherein the first monomer is different from the second monomer and at least one monomer contains at least one reactive group. Also provided is a copolymer selected from Copolymers 1-19.

Further provided are electronic devices, each comprising at least one layer comprising the above copolymer or at least one of Copolymers 1-19.

Also further provided is a process for making an organic electronic device comprising: providing a liquid comprising a copolymer as disclosed herein; providing an anode; contacting the liquid comprising the copolymer with the anode; removing the liquid from the copolymer to produce a hole transport film; heating to crosslink the copolymer of the hole transport film; providing an emitter; disposing the emitter adjacent to the hole transport film; providing an electron transporter and disposing said electron transporter adjacent to the emitter; and providing a cathode adjacent to the electron transporter.

The foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as defined in the appended claims. , BRIEF DESCRIPTION OF THE FIGURES

Embodiments are illustrated in the accompanying figures to improve understanding of concepts as presented herein.

Fig. 1: An illustrative example of one organic electronic device comprising at least one layer comprising a novel copolymer as disclosed herein.

Skilled artisans appreciate that objects in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the objects in the figures may be magnified relative to other objects to help to improve understanding of embodiments, and therefore are not necessarily drawn to scale or proportioned to scale. DETAILED DESCRIPTION

The copolymers disclosed herein are useful in making charge transport layers for use in electronic devices. The charge transport layers can be used in any application wherein charge transport capacity is desired.

The new copolymers described herein have repeating units derivei from at least one first monomer selected from the group consisting of monomers A1 through A5, as described above, and at least one second monomer selected from the group consisting of monomers A1 to A5, B1 t< B7, and C1 to C7, as described above. In the monomers, all R's and Ar's are independently selected and may be the same or different. R', R'", R^ιv and R^v can also be a fluoro or hetero analog of any of the groups listed above.

The term "copolymer" is intended to include oligomers and copolymers having two or more different repeating units. Thus, A1 and A: are different repeating units; to continue the example, two monomers derived from B1 having different substituents would have different repeating units.- A copolymer having repeating units derived from a first monomer "X-Q-X" and a second monomer "X-T-X" will have repeating units -f Q-)- and -f T-)-.

The term "reactive group" is intended to mean a group which remains after polymerization and will react with another like group or another part of the polymer to form crosslinks or networks within the polymer. The formation of crosslinks or networks is hereinafter referred to as a "crosslinking reaction." In one embodiment, the crosslinking reaction is initiated by heat or exposure to visible or UV radiation. In one embodiment, the reactive group is vinyl, acrylate, perfluorovinyl ether, siloxane, or 1-benzo-3,4-cyclobutane.

The term "leaving group" is intended to mean a group that facilitates polymerization and is eliminated in the polymerization reaction. In one embodiment, the leaving group is a halide, triflate, boronic acid, boronic acid ester, or borane. In one embodiment, the leaving group is Cl or Br.

In one embodiment, the first monomer is monomer A1. In one embodiment, the first monomer is A1, wherein a = b = 0, and R is 3-vinylphenyl.

In one embodiment, b = 0 or 1. In one embodiment, b = 0. In one embodiment, the copolymer is one of Copolymers 1-19 below:

Copolymer 1

a:b = 2-1

Copolymer 3

a:b:c = 5:3:2

Copolymer 6

a:b:c= 1:1:2

Copolymer 7

a:b = 75:25

Copolymer 8

Copolymer 9

Copolymer 10

Copolymer 11

Copolymer 12

Copolymer 13

10 Copolymer 15

15

Copolymer 18

The copolymers described herein can be random or block copolymers. Monomers may be reacted to form larger monomeric units which are then polymerized alone or with other monomers. A copolymer -f-A-)xf-B->y— may be formed by copolymerizing monomer X-A-X with monomer X-B-X, or by forming larger monomer X-A-B-X and polymerizing that monomer. In both cases, the resulting polymer is considered a copolymer derived from monomer X-A-X and monomer X-B-X.

The copolymers as described herein can generally be prepared by three known synthetic routes. In a first synthetic method, as described in Yamamoto, Progress in Polymer Science, Vol. 17, p 1153 (1992), the dihalo derivatives of the monomeric units are reacted with a stoichiometric amount of a zerovalent nickel compound, such as bis(1,5- cyclooctadiene)nickel(O). In the second method, as described in Colon e al., Journal of Polymer Science, Part A, Polymer chemistry Edition, Vol. 28, p. 367 (1990). The dihalo derivatives of the monomeric units are reacted with catalytic amounts of Ni(II) compounds in the presence of stoichiometric amounts of a material capable of reducing the divalent nickel ion to zerovalent nickel. Suitable materials include zinc, magnesium, calcium and lithium. In the third synthetic method, as described in US Patent 5,962,631 , and published PCT application WO 00/53565, a dihalo derivative of one monomeric unit is reacted with a derivative of another monomeric unit having two reactive groups selected from boronic acid, boronic acid esters, and boranes, in the presence of a zerovalent palladium catalyst, such as tetrakis(triphenylphosphine)Pd. The practical upper limit to the number of monomeric units in the copolymer is determined in part by the desired solubility of a copolymer in a particular solvent or class of solvents. As the number of monomeric units increases, the molecular weight of the compound increases. The increase in molecular weight is generally expected to result in a reduced solubility of the compound in a particular solvent. Moreover, in one embodiment, the number of monomeric units at which a copolymer becomes substantially insoluble in a given solvent is dependent in part upon the structure of the compound. For example, a compound containing multiple phenyl groups may become substantially insoluble in an organic solvent when the number of monomeric units is much less thar about 10⁴. As another example, a compound containing fewer phenyl groups and/or phenyl groups with particular functional groups may be soluble in a given solvent even though the number of monomeric units is about 10⁴ or greater, even 10⁵ or 10⁶. The selection of copolymer molecular weight and a solvent is within the purview of one skilled in the art.

In one embodiment, there is provided a liquid composition comprising the new copolymer described above. The liquid composition can be in the form of, for example, a solution, dispersion, or emulsion. In one embodiment, there is provided a process for making an organic electronic device. The process includes: providing a liquid comprising a new copolymer as described hereinabove; providing an anode; contacting said liquid comprising said compound with said anode; removing said liquid from said compound to produce a hole transport film; heating to crosslink the hole transport copolymer; providing an emitter; disposing said emitter adjacent to said hole transport film; providing an electron transporter and disposing said electron transporter adjacent to said emitter; and providing a cathode adjacent to said electron transporte The liquid can be, for example, a solution or dispersion. In one embodiment, a buffer layer is provided between the anode and the hole transport film.

The term "organic electronic device" is intended to mean a device including one or more organic semiconductor layers or materials. An organic electronic device includes, but is not limited to: (1) a device that converts electrical energy into radiation (e.g., a light-emitting diode, light emitting diode display, diode laser, or lighting panel), (2) a device that detects a signal using an electronic process (e.g., a photodetector, a photoconductive cell, a photoresistor, a photoswitch, a phototransistor, a phototube, an infrared ("IR") detector, or a biosensors), (3) a device that converts radiation into electrical energy (e.g., a photovoltaic device or solar cell), (4) a device that includes one or more electronic components that include one or more organic semiconductor layers (e.g., a transistor c diode), or any combination of devices in items (1) through (4). For making electronic devices, including OLED devices, in one embodiment, the compounds form films when deposited onto a transparent anode such as indium-doped tin oxide (ITO). The quality of the resultant film can be superficially judged by visual/microscopic inspection for smoothness and defect density. With respect to OLEDs₁ it is preferred that visually observed defects be minimal. Furthermore, film quality can be measured by estimation of film thickness over several separate areas of the film using, for example, an optical ellipsometer or a mechanical profilometer; it is preferred that the films have substantially uniform thicknesses as measured in the different areas of the film. The liquid is preferably a solvent for the compound. A preferred solvent for a particular compound or related class of compounds can be readily determined by one skilled in the art. For some applications, it is preferred that the compounds be dissolved in non-aqueous solvents. Such non-aqueous solvents can be relatively polar, such as Ci to C₂o alcohols, ethers, and acid esters, or can be relatively non-polar such as Ci to C-1₂ alkanes or aromatics.

Other suitable liquids for use in making the liquid composition, either as a solution or dispersion as described herein, comprising the new compounds, includes, but not limited to, chlorinated hydrocarbons (such as methylene chloride, chloroform, chlorobenzene), aromatic hydrocarbons (such as substituted and non-substituted toluenes and xylenes), including triflurotoluene), polar solvents (such as tetrahydrofurar (THP), N-methyl pyrrolidone) esters (such as ethylacetate) alcohols (isopropanol), ketones (cyclopentatone) and mixtures thereof.

In one embodiment, the compound is dissolved in a solvent in which the compound is substantially soluble. The solution is then formed into a thin film and dried by any of several techniques such as spin- depositing, inkjetting etc. The resultant film formed as the solvent evaporates is then further dried by baking at elevated temperatures, including above the boiling point of the solvent, either in a vacuum of nitrogen atmosphere. The baking is continued to crosslink the copolymer. The crosslinked copolymer may be substantially less soluble in further liquid processing steps. The film is then subjected to further processing by depositing a second solution containing emissive layer materials on top of the pre-formed compound film where the emissive materials are dissolved in a solvent in which the compound is substantially insoluble. B; "substantially insoluble" is meant that less than about 5 mg of the compound dissolves in 1 ml of the solvent. However, solubilities greater than or less than 5 mg can be used and may be preferred for some applications. For example, a modest solubility up to 10mg/mL may result in a blurred or graded interface between the HTM copolymer described herein and the emissive layer materials. Such blurring can have deleterious or beneficial effects depending upon the natures of the materials involved. Such blurring of the interface can result in improved charge transport across the interface and substantially improved device performance or lifetime.

As will be recognized by one skilled in the art, the solubility of a compound is determined in part by substituent groups within the compound. In one embodiment, the compounds have a relatively low solubility, e.g., a solubility less than about 5mg/ml_, even about 2 mg/mL or less, in solvents that can be used to deposit an emissive layer layer film onto an electrode, which is typically a transparent anode such as ITO (indium doped tin oxide). Device

There are also provided organic electronic devices comprising at least one layer containing a copolymer as disclosed herein, as a hole transport layer. Turning to Fig. 1 , an exemplary organic electronic device 100 is shown. The device 100 includes a substrate 105. The substrate 105 may be rigid or flexible, inorganic or organic, for example, glass, ceramic, metal, or plastic. When voltage is applied, emitted light is visible through the substrate 105.

A first electrical contact layer 110 is deposited on the substrate 105 For illustrative purposes, the layer 110 is an anode layer. The anode laye may be deposited as lines, and is an electrode that is effective for injectinj positive charge carriers. The anode can be made of, for example, materials containing or comprising metal, mixed metals, alloy, metal oxides or mixed-metal oxide. The anode may comprise a conducting polymer, polymer blend or polymer mixtures. Suitable metals include the Group 11 metals, the metals in Groups 4, 5, and 6, and the Group 8-10 transition metals. If the anode is to be light-transmitting, mixed-metal oxides of Groups 12, 13 and 14 metals, such as indium-tin-oxide, are generally used. The anode may also comprise an organic material, especially a conducting polymer such as polyaniline, including exemplary materials as described in "Flexible light-emitting diodes made from soluble conducting polymer," Nature vol. 357, pp 477 479 (11 June 1992). At least one of the anode and cathode should be at least partially transpareni to allow the generated light to be observed. An optional buffer layer 115, comprising materials such as hole transport materials, may be deposited over the anode layer 110, the latter being sometimes referred to as the "hole-injecting contact layer". The buffer layer can comprise hole transport materials. Examples of hole transport materials for layer 115 have been summarized, for example, in Kirk Othmer Encyclopedia of Chemical Technology, Fourth Edition, Vol. 18, p. 837860, 1996, by Y. Wang. Both hole transporting "small" molecules as well as oligomers and polymers may be used. Hole transporting molecules include, but are not limited to: 4,4',4"-tris(N,N- diphenyl-amino)-triphenylamine (TDATA); 4,4' ,4"-tris(N-3-methylphenyl-N- phenyl-amino)-triphenylamine (MTDATA); N,N'-diphenyl-N,N'-bis(3- methylphenyl)-[1.1'-biphenylH.^-diamine (TPD); 1 ,1-bis[(di-4-tolylamino) phenyl]cyclohexane (TAPC); N,N'-bis(4-methylphenyl)-N,N^l-bis(4- ethylphenylHI JM3,3'-dimethyl)biphenyl]-4,4'-diarnine (ETPD); tetrakis-(3- methylphenyO-N.N.N'.N'^.δ-phenylenediamine (PDA); α-phenyl-4-N.N- diphenylaminostyrene (TPS); p-(diethylamino)benzaldehyde diphenylhydrazone (DEH); triphenylamine (TPA); bis[4-(N,N- diethylamino)-2-methylphenyl](4-methylphenyl)methane (MPMP); 1-phenyl-3-[p-(diethylamino)styryl]-5-[p-(diethylamino)phenyl] pyrazoline (PPR or DEASP); 1 ,2-trans-bis(9H-carbazol-9-yl)cyclobutane (DCZB); N,N,N^l,N^<-tetrakis(4-methylpheπyl)-(1 ,1 '-biphenylH^'-diamine (TTB); N_lN'-bis(naphthalen-1-yl)-N_IN'-bis-(phenyl)benzidtne (a-NPB); 4,4'-Λ/,Λ/'-dicarbazolyl-biphenyl (CBP); and porphyrinic compounds, such as copper phthalocyanine. Useful hole transporting polymers include, bul are not limited to, polyvinylcarbazole, (phenylmethyl)polysilane, poythiophene, polypyrrole, and polyaniline. The hole transporting polyme can be a complex of a conducting polymer and a colloid-forming polymerii acid, as disclosed in published US applications US 2004/0254297 and US 2004/029133. Conducting polymers are useful as a class. It is also possible to obtain hole transporting polymers by doping hole transporting moieties, such as those mentioned above, into polymers such as polystyrenes and polycarbonates.

A hole transport layer comprising a copolymer as described herein may be deposited over the the buffer layer 115 when present, or over the first electrical contact layer 110.

An organic layer 130 may be deposited over the hole transport layer 120. In some embodiments, the organic layer 130 may be a numbei of discrete layers comprising a variety of components. Depending upon the application of the device, the organic layer 130 can be a light-emitting layer that is activated by an applied voltage (such as in a light-emitting diode or light-emitting electrochemical cell), or a layer of material that responds to radiant energy and generates a signal with or without an applied bias voltage (such as in a photodetector). Other layers in the device can be made of any materials which are known to be useful in such layers upon consideration of the function to be served by such layers.

Any organic electroluminescent ("EL") material can be used as a photoactive material, e.g. in layer 130. Such materials include, but are nol limited to, fluorescent dyes, small molecule organic fluorescent compounds, fluorescent and phosphorescent metal complexes, conjugated polymers, and mixtures thereof. Examples of fluorescent dyes include, but are not limited to, pyrene, perylene, rubrene, derivatives thereof, and mixtures thereof. Examples of metal complexes include, but are not limited to, metal chelated oxinoid compounds, such as tris(8- hydroxyquinolato)aluminum (Alq3); cyclometalated iridium and platinum electroluminescent compounds, such as complexes of Iridium with phenylpyridine, phenylquinoline, or phenylpyrimidine ligands as disclosed in Petrov et al., Published PCT Application WO 02/02714, and organometallic complexes described in, for example, published applications US 2001/0019782, EP 1191612, WO 02/15645, and EP 1191614; and mixtures thereof. Electroluminescent emissive layers comprising a charge carrying host material and a metal complex have been described by Thompson et al., in U.S. Patent 6,303,238, and by Burrows and Thompson in published PCT applications WO 00/70655 and WO 01/41512. Examples of conjugated polymers include, but are not limited to, poly(pheπylenevinylenes), polyfluorenes, poly(spirobifluorenes) polythiophenes, poly(p-phenylenes), copolymers thereof, and mixtures thereof.

In one embodiment of the device, photoactive material can be an organometallic complex. In another embodiment, the photoactive materia is a cyclometalated complex of iridium or platinum. Other useful photoactive materials may be employed as well. Complexes of iridium with phenylpyridine, phenylquinoline, or phenylpyrimidine ligands have been disclosed as electroluminescent compounds in Petrov et al., Published PCT Application WO 02/02714. Other organometallic complexes have been described in, for example, published applications US 2001/0019782, EP 1191612, WO 02/15645, and EP 1191614.

Electroluminescent devices with an active layer of polyvinyl carbazole (PVK) doped with metallic complexes of iridium have been described by Burrows and Thompson in published PCT applications WO 00/70655 and WO 01/41512. Electroluminescent emissive layers comprising a charge carrying host material and a phosphorescent platinum complex have beer described by Thompson et al., in U.S. Patent 6,303,238, Bradley et al., in Synth. Met. (2001), 116 (1-3), 379-383, and Campbell et al., in Phys. Rev. B, Vol. 65 085210.

A second electrical contact layer 160 is deposited on the organic layer 130. For illustrative purposes, the layer 160 is a cathode layer.

Cathode layers may be deposited as lines or as a film. The cathode can be any metal or nonmetal having a lower work function than the anode. Exemplary materials for the cathode can include alkali metals of Group 1 , especially lithium, the Group 2 (alkaline earth) metals, the Group 12 metals, including the rare earth elements and lanthanides, and the actinides. Materials such as aluminum, indium, calcium, barium, samarium and magnesium, as well as combinations, can be used. Li- containing and other compounds, such as LiF and Li₂O, may also be deposited between an organic layer and the cathode layer to lower the operating voltage of the system.

An electron transport layer 140 or electron injection layer 150 is optionally disposed adjacent to the cathode, the cathode being sometime referred to as the "electron-injecting contact layer."

An encapsulation layer 170 is deposited over the contact layer 160 to prevent entry of undesirable components, such as water and oxygen, into the device 100. Such components can have a deleterious effect on the organic layer 130. In one embodiment, the encapsulation layer 170 is a barrier layer or film.

Though not depicted, it is understood that the device 100 may comprise additional layers. For example, there can be an additional layer (not shown) between the anode 110 and hole transport layer 120 to facilitate positive charge transport and/or band-gap matching of the layers or to function as a protective layer. Other layers that are known in the art or otherwise may be used. In addition, any of the above-described layers may comprise two or more sub-layers or may form a laminar structure. Alternatively, some or all of anode layer 110, the hole transport layer 120, the electron transport layers 140 and 150, cathode layer 160, and other layers may be treated, especially surface treated, to increase charge carrier transport efficiency or other physical properties of the devices. Th« choice of materials for each of the component layers is preferably determined by balancing the goals of providing a device with high device efficiency with device operational lifetime considerations, fabrication time and complexity factors and other considerations appreciated by persons skilled in the art. It will be appreciated that determining optimal components, component configurations, and compositional identities would be routine to those of ordinary skill of in the art.

In one embodiment, the different layers have the following range of thicknesses: anode 110, 500-5000 A, in one embodiment 1000-2000A; optional buffer layer 115 and hole transport layer 120, each 50-2000 A, in one embodiment 200-1000 A; photoactive layer 130, 10-2000 A, in one embodiment 100-1000 A; layers 140 and 150, each 50-2000 A, in one embodiment 100-1000 A; cathode 160, 200-10000 A, in one embodimeni 300-5000 A. The location of the electron-hole recombination zone in the device, and thus the emission spectrum of the device, can be affected by the relative thickness of each layer. Thus the thickness of the electron- transport layer should be chosen so that the electron-hole recombination zone is in the light-emitting layer. The desired ratio of layer thicknesses will depend on the exact nature of the materials used.

In one embodiment, the device has the following structure, in ordei anode, buffer layer, hole transport layer, photoactive layer, electron transport layer, electron injection layer, cathode. In one embodiment, the anode is made of indium tin oxide or indium zinc oxide. In one embodiment, the buffer layer comprises a conducting polymer selected from the group consisting of polythiophenes, polyanilines, polypyrroles, copolymers thereof, and mixtures thereof. In one embodiment, the buffer layer comprises a complex of a conducting polymer and a colloid-forming polymeric acid. In one embodiment, the buffer layer comprises a compound having triarylamine or triarylmethane groups. In one embodiment, the buffer layer comprises a material selected from the grou consisting of TPD, MPMP, NPB, CBP, and mixtures thereof, as defined above.

In one embodiment, the hole transport layer comprises a new copolymer as described herein.

In one embodiment, the photoactive layer comprises an electroluminescent metal complex and a host material. The host can be s charge transport material. In one embodiment, the host material is an organometallic complex having two or more 8-hydroxyquinolate ligands. In one embodiment, the electroluminescent complex is present in an amount of at least 1 % by weight. In one embodiment, the electroluminescent complex is 2-20% by weight. In one embodiment, the electroluminescent complex is 20-50% by weight. In one embodiment, the electroluminescent complex is 50-80% by weight. In one embodiment, th£ electroluminescent complex is 80-99% by weight. In one embodiment, the metal complex is a cyclometalated complex of indium, platinum, rhenium, or osmium. In one embodiment, the photoactive layer further comprises a second host material. The second host can be a charge transport material. In one embodiment, the second host is a hole transport material In one embodiment, the second host is an electron transport material. In one embodiment, the second host material is a metal complex of a hydroxyaryl-N-heterocycle. In one embodiment, the hydroxy a ryl-N- heterocycle is unsubstituted or substituted 8-hydroxyquinoline. In one embodiment, the metal is aluminum. In one embodiment, the second hos is a material selected from the group consisting of tris(8- hydroxyquinolinato)aluminum, bis(8-hydroxyquinolinato)(4- phenylphenolato)aluminum, tetrakis(8-hydroxyquinolinato)zirconium, and mixtures thereof. The ratio of the first host to the second host can be 1 :100 to 100:1. In one embodiment the ratio is from 1 :10 to 10:1. In one embodiment, the ratio is from 1:10 to 1:5. In one embodiment, the ratio is from 1 :5 to 1 :1. In one embodiment, the ratio is from 1 :1 to 5:1. In one embodiment, the ratio is from 5:1 to 5:10.

In one embodiment, the electron transport layer comprises a metal complex of a hydroxyaryl-N-heterocycle. In one embodiment, the hydroxyaryl-N-heterocycle is unsubstituted or substituted 8- hydroxyquinoline. In one embodiment, the metal is aluminum. In one embodiment, the electron transport layer comprises a material selected from the group consisting of tris(8-hydroxyquinolinato)aluminum, bis(8- hydroxyquinoliπato)(4-pheπylphenolato)aluminum, tetrakis(8- hydroxyquinolinato)zirconium, and mixtures thereof. In one embodiment, the electron injection layer is BaO, LiF or UO2. In one embodiment, the cathode is Al or Ba/AI.

In one embodiment, the device is fabricated by liquid deposition of the buffer layer, the hole transport layer, and the photoactive layer, and b} vapor deposition of the electron transport layer, the electron injection layer, and the cathode.

The buffer layer can be deposited from any liquid medium in which it is dissolved or dispersed and from which it will form a film. In one embodiment, the liquid medium consists essentially of one or more organic solvents. In one embodiment, the liquid medium consists essentially of water or water and an organic solvent. In one embodiment the organic solvent is selected from the group consisting of alcohols, ketones, cyclic ethers, and polyols. In one embodiment, the organic liquid is selected from dimethylacetamide ("DMAc"), N-methylpyrrolidone ("NMP"), dimethylformamide ("DMF"), ethylene glycol ("EG"), aliphatic alcohols, and mixtures thereof. The buffer material can be present in the liquid medium in an amount from 0.5 to 10 percent by weight. Other weight percentages of buffer material may be used depending upon the liquid medium. The buffer layer can be applied by any continuous or discontinuous liquid deposition technique. In one embodiment, the buffet layer is applied by spin coating. In one embodiment, the buffer layer is applied by ink jet printing. After liquid deposition, the liquid medium can be removed in air, in an inert atmosphere, or by vacuum, at room temperature or with heating. In one embodiment, the layer is heated to a temperature less than 275°C. In one embodiment, the heating temperature is between 100⁰C and 275°C. In one embodiment, the heating temperature is between 100⁰C and 120⁰C. In one embodiment, the heating temperature is between 120⁰C and 140⁰C. In one embodiment, the heating temperature is between 140⁰C and 160⁰CIn oni embodiment, the heating temperature is between 160⁰C and 180⁰C. In one embodiment, the heating temperature is between 180⁰C and 200°C. In one embodiment, the heating temperature is between 200⁰C and 220⁰CIn one embodiment, the heating temperature is between 190⁰C am 220⁰C In one embodiment, the heating temperature is between 220⁰C and 240⁰C. In one embodiment, the heating temperature is between 240⁰C and 260⁰C In one embodiment, the heating temperature is between 260°C and 275⁰C. The heating time is dependent upon the temperature, and is generally between 5 and 60 minutes. In one embodiment, the final layer thickness is between 5 and 200 nm. In one embodiment, the final layer thickness is between 5 and 40 nm. In one embodiment, the final layer thickness is between 40 and 80 nm. In one embodiment, the final layer thickness is between 80 and 120 nm. In one embodiment, the final layer thickness is between 120 and 160 nm. In one embodiment, the final layer thickness is between 160 and 200 nm.

The hole transport layer can be deposited from any liquid medium in which it is dissolved or dispersed and from which it will form a film. In one embodiment, the liquid medium consists essentially of one or more organic solvents. In one embodiment, the liquid medium consists essentially of water or water and an organic solvent. In one embodiment the organic solvent is an aromatic solvent. In one embodiment, the organic liquid is selected from chloroform, dichloromethane, toluene, xylene, anisole, and mixtures thereof. The hole transport material can be present in the liquid medium in a concentration of 0.2 to 2 percent by weight. Other weight percentages of hole transport material may be used depending upon the liquid medium. The hole transport layer can be applied by any continuous or discontinuous liquid deposition technique. In one embodiment, the hole transport layer is applied by spin coating. In one embodiment, the hole transport layer is applied by ink jet printing. After liquid deposition, the liquid medium can be removed in air, in an ine atmosphere, or by vacuum, at room temperature or with heating. In one embodiment, the layer is heated to a temperature less than 275°C. In on embodiment, the heating temperature is between 170⁰C and 275°C. In one embodiment, the heating temperature is between 170⁰C and 200⁰C. In one embodiment, the heating temperature is between 190⁰C and 22O⁰C. In one embodiment, the heating temperature is between 210⁰C and 240⁰C. In one embodiment, the heating temperature is between 23O⁰C and 270⁰C. The heating time is dependent upon the temperature, and is generally between 5 and 60 minutes. In one embodiment, the fina layer thickness is between 5 and 50 nm. In one embodiment, the final layer thickness is between 5 and 15 nm. Jn one embodiment, the final layer thickness is between 15 and 25 nm. In one embodiment, the final layer thickness is between 25 and 35 nm. In one embodiment, the final layer thickness is between 35 and 50 nm.

The photoactive layer can be deposited from any liquid medium in which it is dissolved or dispersed and from which it will form a film. In one embodiment, the liquid medium consists essentially of one or more organic solvents. In one embodiment, the liquid medium consists essentially of water or water and an organic solvent. In one embodiment the organic solvent is an aromatic solvent. In one embodiment, the organic liquid is selected from chloroform, dichloromethane, toluene, anisole, and mixtures thereof. The photoactive material can be present in the liquid medium in a concentration of 0.2 to 2 percent by weight. Other weight percentages of photoactive material may be used depending upon the liquid medium. The photoactive layer can be applied by any continuous or discontinuous liquid deposition technique. In one embodiment, the photoactive layer is applied by spin coating. In one embodiment, the photoactive layer is applied by ink jet printing. After liquid deposition, the liquid medium can be removed in air, in an inert atmosphere, or by vacuum, at room temperature or with heating. In one embodiment, the deposited layer is heated to a temperature that is less than the Tg of the material having the lowest Tg. In one embodiment, the heating temperature is at least 10⁰C less than the lowest Tg. In one embodiment, the heating temperature is at least 20⁰C less than the lowest Tg. In one embodiment, the heating temperature is at least 30⁰C less than the lowest Tg. In one embodiment, the heating temperature is between 50°C and 150⁰C. In one embodiment, the heating temperature is betwee 50⁰C and 75°C. In one embodiment, the heating temperature is between 75°C and 100⁰C. In one embodiment, the heating temperature is betwee 100⁰C and 125°C. In one embodiment, the heating temperature is between 125°C and 150⁰C. The heating time is dependent upon the temperature, and is generally between 5 and 60 minutes. In one embodiment, the final layer thickness is between 25 and 100 nm. In one embodiment, the final layer thickness is between 25 and 40 nm. In one embodiment, the final layer thickness is between 40 and 65 nm. In one embodiment, the final layer thickness is between 65 and 80 nm. In one embodiment, the final layer thickness is between 80 and 100 nm. The electron transport layer can be deposited by any vapor deposition method. In one embodiment, it is deposited by thermal evaporation under vacuum. In one embodiment, the Final layer thickness i between 1 and 100 nm. In one embodiment, the final layer thickness is between 1 and 15 nm. In one embodiment, the final layer thickness is between 15 and 30 nm. In one embodiment, the final layer thickness is between 30 and 45 nm. In one embodiment, the final layer thickness is between 45 and 60 nm. In one embodiment, the final layer thickness is between 60 and 75 nm. In one embodiment, the final layer thickness is between 75 and 90 nm. In one embodiment, the final layer thickness is between 90 and 100 nm.

The electron injection layer can be deposited by any vapor deposition method. In one embodiment, it is deposited by thermal evaporation under vacuum. In one embodiment, the vacuum is less than lO^ torr. In one embodiment, the vacuum is less than 10^"7 torr. In one embodiment, the vacuum is less than 10^~8 torr. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 400⁰C. In om embodiment, the material is heated to a temperature in the range of 100°( to 150⁰C. In one embodiment, the material is heated to a temperature in the range of 150⁰C to 200⁰C. In one embodiment, the material is heated to a temperature in the range of 200⁰C to 25O⁰C. In one embodiment, the material is heated to a temperature in the range of 250⁰C to 300⁰C. In om embodiment, the material is heated to a temperature in the range of 300⁰C to 35O⁰C. In one embodiment, the material is heated to a temperature in the range of 350⁰C to 400⁰C. In one embodiment, the material is deposited at a rate of 0.5 to 10 A/sec. In one embodiment, the material is deposited at a rate of 0.5 to 1 A/sec. In one embodiment, the material is deposited at a rate of 1 to 2 A/sec. In one embodiment, the material is deposited at a rate of 2 to 3 A/sec. In one embodiment, the material is deposited at a rate of 3 to 4 A/sec. In one embodiment, the material is deposited at a rate of 4 to 5 A/sec. In one embodiment, the material is deposited at a rate of 5 to 6 A/sec. In one embodiment, the material is deposited at a rate of 6 to 7 A/sec. In one embodiment, the material is deposited at a rate of 7 to 8 A/sec. In one embodiment, the material is deposited at a rate of 8 to 9 A/sec. In one embodiment, the material is deposited at a rate of 9 to 10 A/sec. In one embodiment, the final layer thickness is between 0.1 and 3 nm. In one embodiment, the final layer thickness is between 0.1 and 1 nm. In one embodiment, the final layer thickness is between 1 and 2 nm. In one embodiment, the final layer thickness is between 2 and 3 nm.

The cathode can be deposited by any vapor deposition method. In one embodiment, it is deposited by thermal evaporation under vacuum. It one embodiment, the vacuum is less than 10^"6 torr. In one embodiment, the vacuum is less than 10^"7 torr. In one embodiment, the vacuum is less than 10^'8 torr. I n one embodiment, the vacuum is less than 10^"6 torr. In one embodiment, the vacuum is less than 10^~7 torr. In one embodiment, the vacuum is less than 10^"8 torr. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 400⁰C. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 150⁰C. In one embodiment, the material is heated to a temperature in the range of 150⁰C to 200⁰C. In one embodiment, the material is heated to a temperature in the range of 200⁰C to 25O⁰C. In one embodiment, the material is heated to a temperature in the range of 250⁰C to 300⁰C. In om embodiment, the material is heated to a temperature in the range of 300⁰C to 350⁰C. In one embodiment, the material is heated to a temperature in the range of 350°C to 40O⁰C. In one embodiment, the material is deposited at a rate of 0.5 to 10 A/sec. In one embodiment, the material is deposited at a rate of 0.5 to 1 A/sec. In one embodiment, the material is deposited at a rate of 1 to 2 A/sec. In one embodiment, the material is deposited at a rate of 2 to 3 A/sec. In one embodiment, the material is deposited at a rate of 3 to 4 A/sec. In one embodiment, the material is deposited at a rate of 4 to 5 A/sec. In one embodiment, the material is deposited at a rate of 5 to 6 A/sec. In one embodiment, the material is deposited at a rate of 6 to 7 A/sec. In one embodiment, the material is deposited at a rate of 7 to 8 A/sec. In one embodiment, the material is deposited at a rate of 8 to 9 A/sec. In one embodiment, the material is deposited at a rate of 9 to 10 A/sec. In one embodiment, the final layer thickness is between 10 and 10000 nm. In one embodiment, the final layer thickness is between 10 and 1000 nm. In one embodiment, the fina layer thickness is between 10 and 50 nm. In one embodiment, the final layer thickness is between 50 and 100 nm. In one embodiment, the final layer thickness is between 100 and 200 nm. In one embodiment, the fina layer thickness is between 200 and 300 nm. In one embodiment, the fina layer thickness is between 300 and 400 nm. In one embodiment, the fina layer thickness is between 400 and 500 nm. In one embodiment, the final layer thickness is between 500 and 600 nm. In one embodiment, the final layer thickness is between 600 and 700 nm. In one embodiment, the final layer thickness is between 700 and 800 nm. In one embodiment, the final layer thickness is between 800 and 900 nm. In one embodiment, the final layer thickness is between 900 and 1000 nm. In one embodiment, the final layer thickness is between 1000 and 2000 nm. In one embodiment, the final layer thickness is between 2000 and 3000 nm. In one embodiment, the final layer thickness is between 3000 and 4000 nm. In one embodiment, the final layer thickness is between 4000 and 5000 nm. In one embodiment, the final layer thickness is between 5000 and 6000 nm. In one embodiment, the final layer thickness is between 6000 and 7000 nm. In one embodiment, the final layer thickness is between 7000 and 8000 nm. In one embodiment, the final layer thickness is between 8000 and 9000 nm. In one embodiment, the final layer thickness is between 9000 and 10000 nm.

In one embodiment, the device is fabricated by vapor deposition of the buffer layer, the hole transport layer, and the photoactive layer, the electron transport layer, the electron injection layer, and the cathode.

In one embodiment, the buffer layer is applied by vapor deposition. In one embodiment, it is deposited by thermal evaporation under vacuum. In one embodiment, the vacuum is less than 10^"6 torr. In one embodiment the vacuum is less than 10^~7 torr. In one embodiment, the vacuum is less than 10^"8 torr. In one embodiment, the vacuum is less than 10^~6 torr. In one embodiment, the vacuum is less than 10^"7 torr. In one embodiment, the vacuum is less than 10^"8 torr. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 400⁰C. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 150⁰C. In one embodiment, the material is heated to a temperature in the range of 15O⁰C to 200⁰C. In one embodiment, the material is heated to a temperature in the range of 200⁰C to 250⁰C. In one embodiment, the material is heated to a temperature in the range of 25O⁰C to 300⁰C. In on embodiment, the material is heated to a temperature in the range of 300°» to 350⁰C. In one embodiment, the material is heated to a temperature in the range of 350⁰C to 400⁰C. In one embodiment, the material is deposited at a rate of 0.5 to 10 A/sec. In one embodiment, the material is deposited at a rate of 0.5 to 1 A/sec. In one embodiment, the material is deposited at a rate of 1 to 2 A/sec. In one embodiment, the material is deposited at a rate of 2 to 3 A/sec. In one embodiment, the material is deposited at a rate of 3 to 4 A/sec. In one embodiment, the material is deposited at a rate of 4 to 5 A/sec. In one embodiment, the material is deposited at a rate of 5 to 6 A/sec. In one embodiment, the material is deposited at a rate of 6 to 7 A/sec. In one embodiment, the material is deposited at a rate of 7 to 8 A/sec. In one embodiment, the material is deposited at a rate of 8 to 9 A/sec. In one embodiment, the material is deposited at a rate of 9 to 10 A/sec. In one embodiment, the final layer thickness is between 5 and 200 nm. In one embodiment, the final layer thickness is between 5 and 30 nm. In one embodiment, the final layer thickness is between 30 and 60 nm. In one embodiment, the final layer thickness is between 60 and 90 nm. In one embodiment, the final layer thickness is between 90 and 120 nm. In one embodiment, the final layer thickness is between 120 and 150 nm. In one embodiment, the final layer thickness is between 150 and 280 nm. In one embodiment, the final layer thickness is between 180 and 200 nm.

In one embodiment, the hole transport layer is applied by vapor deposition. In one embodiment, it is deposited by thermal evaporation under vacuum. In one embodiment, the vacuum is less than 10⁶ torr. In one embodiment, the vacuum is less than 10^'7 torr. In one embodiment, the vacuum is less than 10^"8 torr. In one embodiment, the vacuum is less than 10^'6 torr. In one embodiment, the vacuum is less than 10^~7 torr. In one embodiment, the vacuum is less than 10^"8 torr. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 400⁰C. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 150⁰C. In one embodiment, the material is heated to a temperature in the range of 150⁰C to 200⁰C. In one embodiment, the material is heated to a temperature in the range of 200⁰C to 250⁰C. Jn one embodiment, the material is heated to a temperature in the range of 250⁰C to 300⁰C. In one embodiment, the material is heated to a temperature in the range of 300⁰C to 35O⁰C. In one embodiment, the material is heated to a temperature in the range of 350⁰C to 400⁰C. In one embodiment, the material is deposited at a rate of 0.5 to 10 A/sec. In one embodiment, th€ material is deposited at a rate of 0.5 to 1 A/sec. In one embodiment, the material is deposited at a rate of 1 to 2 A/sec. In one embodiment, the material is deposited at a rate of 2 to 3 A/sec. In one embodiment, the material is deposited at a rate of 3 to 4 A/sec. In one embodiment, the material is deposited at a rate of 4 to 5 A/sec. Ih one embodiment, the material is deposited at a rate of 5 to 6 A/sec. In one embodiment, the material is deposited at a rate of 6 to 7 A/sec. In one embodiment, the material is deposited at a rate of 7 to 8 A/sec. In one embodiment, the material is deposited at a rate of 8 to 9 A/sec. In one embodiment, the material is deposited at a rate of 9 to 10 A/sec. In one embodiment, the final layer thickness is between 5 and 200 nm. In one embodiment, the final layer thickness is between 5 and 30 nm. In one embodiment, the final layer thickness is between 30 and 60 nm. In one embodiment, the final layer thickness is between 60 and 90 nm. In one embodiment, the final layer thickness is between 90 and 120 nm. In one embodiment, the final layer thickness is between 120 and 150 nm. In one embodiment, the final layer thickness is between 150 and 280 nm. In one embodiment, the final layer thickness is between 180 and 200 nm.

In one embodiment, the photoactive layer is applied by vapor deposition. In one embodiment, it is deposited by thermal evaporation under vacuum. In one embodiment, the photoactive layer consists essentially of a single electroluminescent compound, which is deposited by thermal evaporation under vacuum. In one embodiment, the vacuum is less than 10^'6 torr. In one embodiment, the vacuum is less than 10^"7 torr. In one embodiment, the vacuum is less than 10^"8 torr. In one embodimeni the vacuum is less than 10^"6 torr. In one embodiment, the vacuum is less than 10^"7 torr. In one embodiment, the vacuum is less than 10^"8 torr. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 400⁰C. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 150⁰C. In one embodiment, the material is heated to a temperature in the range of 150⁰C to 20O⁰C. In on< embodiment, the material is heated to a temperature in the range of 200⁰C to 25O⁰C. In one embodiment, the material is heated to a temperature in the range of 250⁰C to 300⁰C. In one embodiment, the material is heated to a temperature in the range of 300⁰C to 350⁰C. In one embodiment, the material is heated to a temperature in the range of 350⁰C to 400⁰C. In or embodiment, the material is deposited at a rate of 0.5 to 10 A/sec. In one embodiment, the material is deposited at a rate of 0.5 to 1 A/sec. In one embodiment, the material is deposited at a rate of 1 to 2 A/sec. In one embodiment, the material is deposited at a rate of 2 to 3 A/sec. In one embodiment, the material is deposited at a rate of 3 to 4 A/sec. In one embodiment, the material is deposited at a rate of 4 to 5 A/sec. In one embodiment, the material is deposited at a rate of 5 to 6 A/sec. In one embodiment, the material is deposited at a rate of 6 to 7 A/sec. In one embodiment, the material is deposited at a rate of 7 to 8 A/sec. In one embodiment, the material is deposited at a rate of 8 to 9 A/sec. In one embodiment, the material is deposited at a rate of 9 to 10 A/sec. In one embodiment, the final layer thickness is between 5 and 200 nm. In one embodiment, the final layer thickness is between 5 and 30 nm. In one embodiment, the final layer thickness is between 30 and 60 nm. In one embodiment, the final layer thickness is between 60 and 90 nm. In one embodiment, the final layer thickness is between 90 and 120 nm. In one embodiment, the final layer thickness is between 120 and 150 nm. In one embodiment, the final layer thickness is between 150 and 280 nm. In one embodiment, the final layer thickness is between 180 and 200 nm.

In one embodiment, the photoactive layer comprises two electroluminescent materials, each of which is applied by thermal evaporation under vacuum. Any of the above listed vacuum conditions and temperatures can be used. Any of the above listed deposition rates can be used. The relative deposition rates can be from 50:1 to 1:50. In one embodiment, the relative deposition rates are from 1:1 to 1:3. In one embodiment, the relative deposition rates are from 1:3 to 1:5. In one embodiment, the relative deposition rates are from 1:5 to 1 :8. In one embodiment, the relative deposition rates are from 1:8 to 1:10. In one embodiment, the relative deposition rates are from 1:10 to 1 :20. In one embodiment, the relative deposition rates are from 1:20 to 1 :30. In one embodiment, the relative deposition rates are from 1:30 to 1 :50. The total thickness of the layer can be the same as that described above for a single-component photoactive layer.

In one embodiment, the photoactive layer comprises one electroluminescent material and at least one host material, each of which is applied by thermal evaporation under vacuum. Any of the above listed vacuum conditions and temperatures can be used. Any of the above listed deposition rates can be used. The relative deposition rate of electroluminescent material to host can be from 1:1 to 1:99. In one embodiment, the relative deposition rates are from 1:1 to 1 :3. In one embodiment, the relative deposition rates are from 1:3 to 1 :5. In one embodiment, the relative deposition rates are from 1:5 to 1 :8. In one embodiment, the relative deposition rates are from 1:8 to 1 :10. In one embodiment, the relative deposition rates are from 1:10 to 1:20. In one embodiment, the relative deposition rates are from 1 :20 to 1 :30. In one embodiment, the relative deposition rates are from 1:30 to 1 :40. In one embodiment, the relative deposition rates are from 1 :40 to 1 :50. In one embodiment, the relative deposition rates are from 1 :50 to 1 :60. In one embodiment, the relative deposition rates are from 1:60 to 1 :70. In one embodiment, the relative deposition rates are from 1 :70 to 1:80. In one embodiment, the relative deposition rates are from 1 :80 to 1 :90. In one embodiment, the relative deposition rates are from 1 :90 to 1:99. The tota thickness of the layer can be the same as that described above for a single-component photoactive layer.

In one embodiment, the electron transport layer is applied by vapoi deposition. In one embodiment, it is deposited by thermal evaporation under vacuum. In one embodiment, the vacuum is less than 10^"6 torr. In one embodiment, the vacuum is less than 10^'7 torr. In one embodiment, the vacuum is less than 10^"8 torr. In one embodiment, the vacuum is less than 10^'6 torr. In one embodiment, the vacuum is less than 10^~7 torr. In one embodiment, the vacuum is less than 10^~8 torr. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 400⁰C. Ir one embodiment, the material is heated to a temperature in the range of 100⁰C to 15O⁰C. In one embodiment, the material is heated to a temperature in the range of 150⁰C to 200⁰C. In one embodiment, the material is heated to a temperature in the range of 200°C to 25O⁰C. In on< embodiment, the material is heated to a temperature in the range of 250⁰C to 300⁰C. In one embodiment, the material is heated to a temperature in the range of 300°C to 35O⁰C. In one embodiment, the material is heated to a temperature in the range of 350⁰C to 400⁰C, In one embodiment, the material is deposited at a rate of 0.5 to 10 A/sec. In one embodiment, the material is deposited at a rate of 0.5 to 1 A/sec. In one embodiment, the material is deposited at a rate of 1 to 2 A/sec. In one embodiment, the material is deposited at a rate of 2 to 3 A/sec. In one embodiment, the material is deposited at a rate of 3 to 4 A/sec. In one embodiment, the material is deposited at a rate of 4 to 5 A/sec. In one embodiment, the material is deposited at a rate of 5 to 6 A/sec. In one embodiment, the material is deposited at a rate of 6 to 7 A/sec. In one embodiment, the material is deposited at a rate of 7 to 8 A/sec. In one embodiment, the material is deposited at a rate of 8 to 9 A/sec. In one embodiment, the material is deposited at a rate of 9 to 10 A/sec. In one embodiment, the final layer thickness is between 5 and 200 nm. In one embodiment, the final layer thickness is between 5 and 30 nm. In one embodiment, the final layer thickness is between 30 and 60 nm. In one embodiment, the final layer thickness is between 60 and 90 nm. In one embodiment, the final layer thickness is between 90 and 120 nm. In one embodiment, the final layer thickness is between 120 and 150 nm. In one embodiment, the final layer thickness is between 150 and 280 nm. In one embodiment, the final layer thickness is between 180 and 200 nm.

In one embodiment, the electron injection layer is applied by vapor deposition, as described above. .

In one embodiment, the cathode is applied by vapor deposition, as describe above. In one embodiment, the device is fabricated by vapor deposition of some of the organic layers, and liquid deposition of some of the organic layers. In one embodiment, the device is fabricated by liquid deposition o the buffer layer, and vapor deposition of all of the other layers.

In operation, a voltage from an appropriate power supply (not depicted) is applied to the device 100. Current therefore passes across the layers of the device 100. Electrons enter the organic polymer layer, releasing photons. In some OLEDs, called active matrix OLED displays, individual deposits of photoactive organic films may be independently excited by the passage of current, leading to individual pixels of light emission. In some OLEDs, called passive matrix OLED displays, deposits of photoactive organic films may be excited by rows and columns of electrical contact layers.

The devices can be prepared employing a variety of techniques. These include, by way of non-limiting exemplification, vapor deposition techniques and liquid deposition.

As used herein, the term "hole transport" when referring to a layer, material, member, or structure, is intended to mean such layer, material, member, or structure facilitates migration of positive charges through the thickness of such layer, material, member, or structure with relative efficiency and small loss of charge.

The term "composition", used alone to refer to compositions havin< particular formulas disclosed and claimed herein, is intended to be construed broadly to include the compounds, monomers, dimers, oligomers and polymers thereof, as well as solutions, dispersions, liquid and solid mixtures and admixtures.

The term "anti-quenching composition" is intended to mean a material which prevents, retards, or diminishes both the transfer of energ^y and the transfer of an electron to or from the excited state of the photoactive layer to an adjacent layer.

The term "photoactive" refers to any material that exhibits electroluminescence, photoluminescence, and/or photosensitivity.

The term "group" is intended to mean a part of a compound, such as a substituent in an organic compound. The prefix "hetero" indicates th£ one or more carbon atoms have been replaced with a different atom. The prefix "fluoro" indicates that one or more hydrogens have been replaced with a fluorine.

The term "alky I" is intended to mean a group derived from an aliphatic hydrocarbon having one point of attachment, which group may bi unsubstituted or substituted. In one embodiment, alkyl groups may have

1-20 carbon atoms. The term "aryl" is intended to mean a group derived from an aromatic hydrocarbon having one point of attachment, which group may be unsubstituted or substituted. In one embodiment, the aryl group may have 6-30 carbon atoms. In one embodiment, a heteroaryl group may have 2-30 carbon atoms. The term "alkoxy" is intended to mean the group -OR, where R is alkyl. The term "aryloxy" is intended to mean the group -OR₁ where R is aryl.

Unless otherwise indicated, all groups can be unsubstituted or substituted. The phrase "adjacent to," when used to refer to layers in a device, does not necessarily mean that one layer is immediately next to another layer. On the other hand, the phrase "adjacent R groups," is used to refer to R groups that are next to each other in a chemical formula (i.e.,

R groups that are on atoms joined by a bond). The term "compound" is intended to mean an electrically unchargec substance made up of molecules that further consist of atoms, wherein the atoms cannot be separated by physical means. The term "copolymer" is intended to encompass oligomeric specie and include materials having 2 or more monomeric units. In addition, the IUPAC numbering system is used throughout, where the groups from the Periodic Table are numbered from left to right as 1 through 18 (CRC Handbook of Chemistry and Physics, 81^s Edition, 2000).

As used herein, "solution processing" means processes that indue depositing from a liquid medium. The liquid medium can be in the form o a solution, a dispersion, an emulsion, or other forms.

The term "layer" is used interchangeably with the term "film" and refers to a coating covering a desired area. The term is not limited by size. The area can be as large as an entire device or as small as a specif functional area such as the actual visual display, or as small as a single sub-pixel. Layers and films can be formed by any conventional depositioi technique, including vapor deposition, liquid deposition (continuous and discontinuous techniques), and thermal transfer. Continuous deposition techniques, include but are not limited to, spin coating, gravure coating, curtain coating, dip coating, slot-die coating, spray coating, and continuoi nozzle coating. Discontinuous deposition techniques include, but are nol limited to, ink jet printing, gravure printing, and screen printing. As used herein, the terms "comprises," "comprising," "includes,"

"including," "has," "having" or any other variation thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed c inherent to such process, method, article, or apparatus. Further, unless expressly stated to the contrary, "or" refers to an inclusive or and not to ar exclusive or. For example, a condition A or B is satisfied by any one of th following: A is true (or present) and B is false (or not present), A is false (or not present) and B is true (or present), and both A and B are true (or present).

Also, "the", "a" or "an" are employed to describe elements and components of the invention. This is done merely for convenience and to give a general sense of the invention. This description should be read to include one or at least one and the singular also includes the plural unless it is obvious that it is meant otherwise.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Unless otherwise defined, all letter symbols in the figures represent atoms with that atomic abbreviation. Although methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present invention, suitable methods and materials are described below.

All publications, patent applications, patents, and other references mentioned herein are incorporated by reference in their entirety. In case of conflict, the present specification, including definitions, will control. In addition, the materials, methods, and examples are illustrative only and not intended to be limiting.

EXAMPLES

The following examples illustrate certain features and advantages of the present invention. They are intended to be illustrative of the invention, but not limiting. All percentages are by weight, unless otherwise indicated.

Example 1

This example illustrates the synthesis of Copolymer 12:

Bis(1 ,5-Cyclooctadiene)-nickel-(Q) (1.667 g, 6.06 mmol ) was adde< to a N,N-dimethylformamide (anhydrous, 6 ml_) solution 2,2'-bipyridyl (0.946 g, 6.06 mmol) and 1 ,5-cyclooctadiene (0.656 g, 6.06 mmol). The resulting mixture was heated to 6OC for 30 min. A toluene (anhydrous, 25 mL) solution of 9,9-dioctyl-2,7-dibromofluorene (0.658 g, 1.20 mmol), N₁N¹ Bis(4-bromomphenyl)-N,N'-diphenylbenzidine (0.776g, 1.20 mmol), N₁N- Bis(4-chlorophenyl)-3-vinylaniline (0.204 g, 0.60 mmol) was then added rapidly to the stirring catalyst mixture. The mixture was stirred at 6OC for ten hours. After the reaction mixture cooled to room temperature, it was poured, slowly, with vigorous stirring into 500 mL methanol and stirred overnight. Addition of 2OmL of cone. HCI followed and stirring for an hour. The precipitate was filtered and then added to 125 mL of toluene and poured slowly into 1 L of 1 :1 methanokacetone solution which contained \ mL cone. HCI. The resulting yellow precipitate was stirred for 30 min anc then isolated by filtration. The solid was further purified by chromatography (silica, toluene) and precipitation from ethyl acetate. Afte drying the resulting material under vacuum a light yellow polymer was isolated in 80% yield (0.97 g). GPC (THF, room temperature): Mn = 60,616; Mw = 365,589; Mw/Mn = 5.98.

Note that not all of the activities described above in the general description or the examples are required, that a portion of a specific activity may not be required, and that one or more further activities may b performed in addition to those described. Still further, the order in which activities are listed is not necessarily the order in which they are performed.

In the foregoing specification, the concepts have been described with reference to specific embodiments. However, one of ordinary skill in the art appreciates that various modifications and changes can be made without departing from the scope of the invention as set forth in the claims below. Accordingly, the specification and figures are to be regarded in ar illustrative rather than a restrictive sense, and all such modifications are intended to be included within the scope of invention.

Benefits, other advantages, and solutions to problems have been described above with regard to specific embodiments. However, the benefits, advantages, solutions to problems, and any feature(s) that may cause any benefit, advantage, or solution to occur or become more pronounced are not to be construed as a critical, required, or essential feature of any or all the claims.

It is to be appreciated that certain features are, for clarity, describe* herein in the context of separate embodiments, may also be provided in combination in a single embodiment. Conversely, various features that are, for brevity, described in the context of a single embodiment, may alsc be provided separately or in any subcombination. Further, reference to values stated in ranges include each and every value within that range. In some embodiments, the invention herein can be construed as excluding any element or process step that does not materially affect the basic and novel characteristics of the composition or process. Additionally in some embodiments, the invention can be construed as excluding any element or process step not specified herein. The use of numerical values in the various ranges specified herein is stated as approximations as though the minimum and maximum values within the stated ranges were both being preceded by the word "about." Ii this manner slight variations above and below the stated ranges can be used to achieve substantially the same results as values within the ranges Also, the disclosure of these ranges is intended as a continuous range including every value between the minimum and maximum average value including fractional values that can result when some of components of one value are mixed with those of different value. Moreover, when broader and narrower^ranges are disclosed, it is within the contemplation of this invention to match a minimum value from one range with a maximum value from another range and vice versa.

3

wherein:

R' = D, alkyl, fluoroalkyl, heteroalkyl, aryl, heteroaryl, alkoxy, fluoroalkoxy, N(R'")₂, R",

R" = reactive group

R'" = alkyl, fluoroalkyl, aryl

Ar, Ar' = independently phenylene, naphthylene, or biphenylene E = O, S, (SiR^ivR^v)n, (CR^ivR^v)_n, or combinations thereof, and can be different at each occurrence, wherein R'^v and R^v are each independently selected from H₁ F, alkyl, aryl, alkoxy, aryloxy, fluoroalkyl, fluoroaryl, fluoroalkoxy, and fluoroaryloxy and wherein R'^v and R^v can, when taken together, form a non-aromatic ring, X = leaving group

Y = alkyl, heteroalkyl, R a = 0 to 4 b = 0 to 20 m = 0 to 5 n = 1 to 20 q = 0 to 7; and further wherein the first monomer is different from the second monomer and at least one monomer contains at least one reactive group. Also provided is a copolymer selected from Copolymers 1-19.

The foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as defined in the appended claims. BRIEF DESCRIPTION OF THE FIGURES

The copolymers disclosed herein are useful in making charge transport layers for use in electronic devices. The charge transport layeπ can be used in any application wherein charge transport capacity is desired.

The new copolymers described herein have repeating units derive' from at least one first monomer selected from the group consisting of monomers A1 through A5, as described above, and at least one second monomer selected from the group consisting of monomers A1 to A5, B1 t B7, and C1 to C7, as described above. In the monomers, all R's and Ar'ε are independently selected and may be the same or different. R', R'", R^ιv and R^v can also be a fluoro or hetero analog of any of the groups listed above.

The term "copolymer" is intended to include oligomers and copolymers having two or more different repeating units. Thus, A1 and A are different repeating units; to continue the example, two monomers derived from B1 having different substituents would have different repeating units. A copolymer having repeating units derived from a first monomer "X-Q-X" and a second monomer "X-T-X" will have repeating units -f CB- and -f T-)-.

The term "reactive group" is intended to mean a group which remains after polymerization and will react with another like group or another part of the polymer to form crosslinks or networks within the polymer. The formation of crosslinks or networks is hereinafter referred tc as a "crosslinking reaction." In one embodiment, the crosslinking reaction is initiated by heat or exposure to visible or UV radiation. In one embodiment, the reactive group is vinyl, acrylate, perfluorovinyl ether, siloxane, or 1-benzo-3,4-cyclobutane.

The term "leaving group" is intended to mean a group that facilitate polymerization and is eliminated in the polymerization reaction. In one embodiment, the leaving group is a halide, triflate, boronic acid, boronic acid ester, or borane. In one embodiment, the leaving group is Cl or Br.

7

Copolymer 1

Copolymer 3

8

a:b:c= 1:2:2

Copolymer 5

a:b:c = 5:3:2

Copolymer 6

abc=1:1:2

Copolymer 7

a:b = 75:25

Copolymer 8

a:b:c= 1:2:7

Copolymer 9

10

Copolymer 12

15

10

Copolymer 13

Copolymer 14

10 Copolymer 15

Copolymer 16

15

11

The copolymers described herein can be random or block copolymers. Monomers may be reacted to form larger monomeric units which are then polymerized alone or with other monomers. A copolymer -f-A-)xH3-)y— may be formed by copolymerizing monomer X-A-X with monomer X-B-X, or by forming larger monomer X-A-B-X and polymerizing that monomer. In both cases, the resulting polymer is considered a copolymer derived from monomer X-A-X and monomer X-B-X.

The copolymers as described herein can generally be prepared by three known synthetic routes. In a first synthetic method, as described in Yamamoto, Progress in Polymer Science, Vol. 17, p 1153 (1992), the dihalo derivatives of the monomeric units are reacted with a stoichiometric

12 amount of a zerovalent nickel compound, such as bis(1 ,5- cyclooctadiene)nickel(O). In the second method, as described in Colon el al., Journal of Polymer Science, Part A, Polymer chemistry Edition, Vol. 28, p. 367 (1990). The dihalo derivatives of the monomeric units are reacted with catalytic amounts of Ni(II) compounds in the presence of stoichiometric amounts of a material capable of reducing the divalent nickel ion to zerovalent nickel. Suitable materials include zinc, magnesium, calcium and lithium. In the third synthetic method, as described in US Patent 5,962,631 , and published PCT application WO 00/53565, a dihalo derivative of one monomeric unit is reacted with a derivative of another monomeric unit having two reactive groups selected from boronic acid, boronic acid esters, and boranes, in the presence of a zerovalent palladium catalyst, such as tetrakis(triphenylphosphine)Pd. The practical upper limit to the number of monomeric units in the copolymer is determined in part by the desired solubility of a copolymer in a particular solvent or class of solvents. As the number of monomeric units increases, the molecular weight of the compound increases. The increase in molecular weight is generally expected to result in a reduced solubility of the compound in a particular solvent. Moreover, in one embodiment, the number of monomeric units at which a copolymer becomes substantially insoluble in a given solvent is dependent in part upon the structure of the compound. For example, a compound containing multiple phenyl groups may become substantially insoluble in an organic solvent when the number of monomeric units is much less thar about 10⁴. As another example, a compound containing fewer phenyl groups and/or phenyl groups with particular functional groups may be soluble in a given solvent even though the number of monomeric units is about 10⁴ or greater, even 10⁵ or 10⁶. The selection of copolymer molecular weight and a solvent is within the purview of one skilled in the art.

In one embodiment, there is provided a liquid composition comprising the new copolymer described above. The liquid composition can be in the form of, for example, a solution, dispersion, or emulsion. In one embodiment, there is provided a process for making an organic electronic device. The process includes: providing a liquid comprising a new copolymer as described hereinabove; providing an anode; contacting said liquid comprising said compound with said anode; removing said liquid from said compound to produce a hole transport film;

13 heating to crosslink the hole transport copolymer; providing an emitter; disposing said emitter adjacent to said hole transport film; providing an electron transporter and disposing said electron transporter adjacent to said emitter; and providing a cathode adjacent to said electron transporte The liquid can be, for example, a solution or dispersion. In one embodiment, a buffer layer is provided between the anode and the hole transport film.

The term "organic electronic device" is intended to mean a device including one or more organic semiconductor layers or materials. An organic electronic device includes, but is not limited to: (1) a device that converts electrical energy into radiation (e.g., a light-emitting diode, light emitting diode display, diode laser, or lighting panel), (2) a device that detects a signal using an electronic process (e.g., a photodetector, a photoconductive cell, a photoresistor, a photoswitch, a phototransistor, a phototube, an infrared ("IR") detector, or a biosensors), (3) a device that converts radiation into electrical energy (e.g., a photovoltaic device or solar cell), (4) a device that includes one or more electronic components that include one or more organic semiconductor layers (e.g., a transistor c diode), or any combination of devices in items (1) through (4). For making electronic devices, including OLED devices, in one embodiment, the compounds form films when deposited onto a transparent anode such as indium-doped tin oxide (ITO). The quality of the resultant film can be superficially judged by visual/microscopic inspection for smoothness and defect density. With respect to OLEDs, it is preferred that visually observed defects be minimal. Furthermore, film quality can be measured by estimation of film thickness over several separate areas of the film using, for example, an optical ellipsometer or a mechanical profilometer; it is preferred that the films have substantially uniform thicknesses as measured in the different areas of the film. The liquid is preferably a solvent for the compound. A preferred solvent for a particular compound or related class of compounds can be readily determined by one skilled in the art. For some applications, it is preferred that the compounds be dissolved in non-aqueous solvents. Such non-aqueous solvents can be relatively polar, such as Ci to C₂o alcohols, ethers, and acid esters, or can be relatively non-polar such as C to Ci₂ alkanes or aromatics.

Other suitable liquids for use in making the liquid composition, either as a solution or dispersion as described herein, comprising the new

14 compounds, includes, but not limited to, chlorinated hydrocarbons (such as methylene chloride, chloroform, chlorobenzene), aromatic hydrocarbons (such as substituted and non-substituted toluenes and xylenes), including triflurotoluene), polar solvents (such as tetrahydrofurai (THP)₁ N-methyl pyrrolidone) esters (such as ethylacetate) alcohols (isopropanol), ketones (cyclopentatone) and mixtures thereof.

In one embodiment, the compound is dissolved in a solvent in which the compound is substantially soluble. The solution is then formed into a thin film and dried by any of several techniques such as spin- depositing, inkjetting etc. The resultant film formed as the solvent evaporates is then further dried by baking at elevated temperatures, including above the boiling point of the solvent, either in a vacuum of nitrogen atmosphere. The baking is continued to crosslink the copolymer. The crosslinked copolymer may be substantially less soluble in further liquid processing steps. The film is then subjected to further processing by depositing a second solution containing emissive layer materials on tθ| of the pre-formed compound film where the emissive materials are dissolved in a solvent in which the compound is substantially insoluble. B "substantially insoluble" is meant that less than about 5 mg of the compound dissolves in 1 ml of the solvent. However, solubilities greater than or less than 5 mg can be used and may be preferred for some applications. For example, a modest solubility up to 10mg/ml_ may result in a blurred or graded interface between the HTM copolymer described herein and the emissive layer materials. Such blurring can have deleterious or beneficial effects depending upon the natures of the materials involved. Such blurring of the interface can result in improved charge transport across the interface and substantially improved device performance or lifetime.

As will be recognized by one skilled in the art, the solubility of a compound is determined in part by substituent groups within the compound. In one embodiment, the compounds have a relatively low solubility, e.g., a solubility less than about 5mg/mL, even about 2 mg/mL or less, in solvents that can be used to deposit an emissive layer layer filrr onto an electrode, which is typically a transparent anode such as ITO (indium doped tin oxide).

15 Device

A first electrical contact layer 110 is deposited on the substrate 101 For illustrative purposes, the layer 110 is an anode layer. The anode laye may be deposited as lines, and is an electrode that is effective for injectin positive charge carriers. The anode can be made of, for example, materials containing or comprising metal, mixed metals, alloy, metal oxides or mixed-metal oxide. The anode may comprise a conducting polymer, polymer blend or polymer mixtures. Suitable metals include the Group 11 metals, the metals in Groups 4, 5, and 6, and the Group 8-10 transition metals. If the anode is to be light-transmitting, mixed-metal oxides of Groups 12, 13 and 14 metals, such as indium-tin-oxide, are generally used. The anode may also comprise an organic material, especially a conducting polymer such as polyaniline, including exemplary materials as described in "Flexible light-emitting diodes made from soluble conducting polymer," Nature vol. 357, pp 477479 (11 June 1992). At least one of the anode and cathode should be at least partially transparen to allow the generated light to be observed. An optional buffer layer 115, comprising materials such as hole transport materials, may be deposited over the anode layer 110, the latter being sometimes referred to as the "hole-injecting contact layer". The buffer layer can comprise hole transport materials. Examples of hole transport materials for layer 115 have been summarized, for example, in Kirk Othmer Encyclopedia of Chemical Technology, Fourth Edition, Vol. 18, p. 837 860, 1996, by Y. Wang. Both hole transporting "small" molecules as well as oligomers and polymers may be used. Hole transporting molecules include, but are not limited to: 4,4',4"-tris(N,N- diphenyl-amino)-triphenylamine (TDATA); 4,4',4"~tris(N-3-methylphenyl-N- phenyl-amino)-triphenylamine (MTDATA); N,N'-diphenyl-N,N'-bis(3- methylphenyl)-[1 ,r-biphenyl]-4,4'-diamine (TPD); 1 ,1-bis[(di-4-tolylamino) phenyl]cyclohexane (TAPC); N,N'-bis(4-methylphenyl)-N,N'-bis(4- ethylphenylMI .143,3'-dimethyl)biphenyl]-4,4'-diamine (ETPD); tetrakis-(3

16 methylphenyO-N.N.N'.N'^.δ-phenylenediamine (PDA); α-phenyl-4-N,N- diphenylaminostyrene (TPS); p-(diethylamino)benzaldehyde diphenylhydrazone (DEH); triphenylamine (TPA); bis[4-(N,N- diethylamino)-2-methylphenyl](4-methylphenyl)methane (MPMP); 1 -phenyl-3-[p-(diethylamino)styryl]-5-[p-(diethylamino)phenyl] pyrazoline (PPR or DEASP); 1 ,2-trans-bis(9H-carbazol-9-yl)cyclobutane (DCZB); N,N,N^I _IN'-tetrakis(4-methylphenylH1 ,1'-biphenyl)-4_>4^I-diamine (TTB); N,N'-bis(naphthalen-1-yl)-N,N'-bis-(phenyl)benzidine (α-NPB); 4,4'-Λ/,Λ/'-dicarbazolyl-biphenyl (CBP); and porphyrinic compounds, such as copper phthalocyanine. Useful hole transporting polymers include, bul are not limited to, polyvinylcarbazole, (phenylmethyl)polysilane, poythiophene, polypyrrole, and polyaniline. The hole transporting polyme can be a complex of a conducting polymer and a colloid-forming polymerii acid, as disclosed in published US applications US 2004/0254297 and US 2004/029133. Conducting polymers are useful as a class. It is also possible to obtain hole transporting polymers by doping hole transporting moieties, such as those mentioned above, into polymers such as polystyrenes and polycarbonates.

Any organic electroluminescent ("EL") material can be used as a photoactive material, e.g. in layer 130. Such materials include, but are nol limited to, fluorescent dyes, small molecule organic fluorescent compounds, fluorescent and phosphorescent metal complexes, conjugated polymers, and mixtures thereof. Examples of fluorescent dyes include, but are not limited to, pyrene, perylene, rubrene, derivatives

17 thereof, and mixtures thereof. Examples of metal complexes include, but are not limited to, metal chelated oxinoid compounds, such as tris(8- hydroxyquinolato)aluminum (Alq3); cyclometalated iridium and platinum electroluminescent compounds, such as complexes of Iridium with phenylpyridiπe, phenylquinoline, or phenylpyrimidine ligands as disclosed in Petrov et al., Published PCT Application WO 02/02714, and organometallic complexes described in, for example, published applications US 2001/0019782, EP 1191612, WO 02/15645, and EP 1191614; and mixtures thereof. Electroluminescent emissive layers comprising a charge carrying host material and a metal complex have been described by Thompson et al., in U.S. Patent 6,303,238, and by Burrows and Thompson in published PCT applications WO 00/70655 and WO 01/41512. Examples of conjugated polymers include, but are not limited to, poly(phenylenevinylenes), polyfluorenes, poly(spirobifluorenes) polythiophenes, poly(p-phenylenes), copolymers thereof, and mixtures thereof.

Electroluminescent devices with an active layer of polyvinyl carbazole (PVK) doped with metallic complexes of iridium have been described by Burrows and Thompson in published PCT applications WO 00/70655 and WO 01/41512. Electroluminescent emissive layers comprising a charge carrying host material and a phosphorescent platinum complex have been described by Thompson et al., in U.S. Patent 6,303,238, Bradley et al., in Synth. Met. (2001), 116 (1-3), 379-383, and Campbell et al., in Phys. Rev. B, Vol. 65 085210.

Cathode layers may be deposited as lines or as a film. The cathode can be any metal or nonmetal having a lower work function than the anode. Exemplary materials for the cathode can include alkali metals

18 of Group 1 , especially lithium, the Group 2 (alkaline earth) metals, the Group 12 metals, including the rare earth elements and lanthanides, and the actinides. Materials such as aluminum, indium, calcium, barium, samarium and magnesium, as well as combinations, can be used. Li- containing and other compounds, such as LiF and Li₂O, may also be deposited between an organic layer and the cathode layer to lower the operating voltage of the system.

Though not depicted, it is understood that the device 100 may comprise additional layers. For example, there can be an additional layer (not shown) between the anode 110 and hole transport layer 120 to facilitate positive charge transport and/or band-gap matching of the layers or to function as a protective layer. Other layers that are known in the art or otherwise may be used. In addition, any of the above-described layers may comprise two or more sub-layers or may form a laminar structure. Alternatively, some or all of anode layer 110, the hole transport layer 120, the electron transport layers 140 and 150, cathode layer 160, and other layers may be treated, especially surface treated, to increase charge carrier transport efficiency or other physical properties of the devices. The choice of materials for each of the component layers is preferably determined by balancing the goals of providing a device with high device efficiency with device operational lifetime considerations, fabrication time and complexity factors and other considerations appreciated by persons skilled in the art. It will be appreciated that determining optimal components, component configurations, and compositional identities would be routine to those of ordinary skill of in the art.

In one embodiment, the different layers have the following range of thicknesses: anode 110, 500-5000 A, in one embodiment 1000-2000A; optional buffer layer 115 and hole transport layer 120, each 50-2000 A, in one embodiment 200-1000 A; photoactive layer 130, 10-2000 A, in one embodiment 100-1000 A; layers 140 and 150, each 50-2000 A, in one

19 embodiment 100-1000 A; cathode 160, 200-10000 A, in one embodiment 300-5000 A. The location of the electron-hole recombination zone in the device, and thus the emission spectrum of the device, can be affected by the relative thickness of each layer. Thus the thickness of the electron- transport layer should be chosen so that the electron-hole recombination zone is in the light-emitting layer. The desired ratio of layer thicknesses will depend on the exact nature of the materials used.

In one embodiment, the device has the following structure, in order anode, buffer layer, hole transport layer, photoactive layer, electron transport layer, electron injection layer, cathode. In one embodiment, the anode is made of indium tin oxide or indium zinc oxide. In one embodiment, the buffer layer comprises a conducting polymer selected from the group consisting of polythiophenes, polyanilines, polypyrroles, copolymers thereof, and mixtures thereof. In one embodiment, the buffer layer comprises a complex of a conducting polymer and a colloid-forming polymeric acid. In one embodiment, the buffer layer comprises a compound having triarylamine or triarylmethane groups. In one embodiment, the buffer layer comprises a material selected from the grou consisting of TPD, MPMP, NPB, CBP, and mixtures thereof, as defined above.

In one embodiment, the photoactive layer comprises an electroluminescent metal complex and a host material. The host can be ε charge transport material. In one embodiment, the host material is an organometallic complex having two or more 8-hydroxyquinolate ligands. In one embodiment, the electroluminescent complex is present in an amount of at least 1 % by weight. In one embodiment, the electroluminescent complex is 2-20% by weight. In one embodiment, the electroluminescent complex is 20-50% by weight. In one embodiment, th< electroluminescent complex is 50-80% by weight. In one embodiment, th< electroluminescent complex is 80-99% by weight. In one embodiment, the metal complex is a cyclometalated complex of iridium, platinum, rhenium, or osmium. In one embodiment, the photoactive layer further comprises a second host material. The second host can be a charge transport material. In one embodiment, the second host is a hole transport material In one embodiment, the second host is an electron transport material. In one embodiment, the second host material is a metal complex of a

20 hydroxyaryl-N-heterocycle. In one embodiment, the hydroxyaryl-N- heterocycle is unsubstituted or substituted 8-hydroxyquinoline. In one embodiment, the metal is aluminum. In one embodiment, the second hos is a material selected from the group consisting of tris(8- hydroxyquinolinato)aluminum, bis(8-hydroxyquinolinato)(4- phenylphenolato)aluminum, tetrakis(8-hydroxyquinolinato)zirconium, and mixtures thereof. The ratio of the first host to the second host can be 1 : 100 to 100: 1. In one embodiment the ratio is from 1 : 10 to 10: 1. In one embodiment, the ratio is from 1:10 to 1:5. In one embodiment, the ratio is from 1 :5 to 1:1. In one embodiment, the ratio is from 1 :1 to 5:1. In one embodiment, the ratio is from 5:1 to 5:10.

In one embodiment, the electron transport layer comprises a metal complex of a hydroxyaryl-N-heterocycle. In one embodiment, the hydroxyaryl-N-heterocycle is unsubstituted or substituted 8- hydroxyquinoline. In one embodiment, the metal is aluminum. In one embodiment, the electron transport layer comprises a material selected from the group consisting of tris(8-hydroxyquinolinato)aluminum, bis(8- hydroxyquinolinato)(4-phenylphenolato)aluminum, tetrakis(8- hydroxyquiπolinato)zirconium, and mixtures thereof. In one embodiment, the electron injection layer is BaO, LiF or LiO₂. In one embodiment, the cathode is Al or Ba/AI.

The buffer layer can be deposited from any liquid medium in which it is dissolved or dispersed and from which it will form a film. In one embodiment, the liquid medium consists essentially of one or more organic solvents. In one embodiment, the liquid medium consists essentially of water or water and an organic solvent. In one embodiment the organic solvent is selected from the group consisting of alcohols, ketones, cyclic ethers, and polyols. In one embodiment, the organic liquid is selected from dimethylacetamide ("DMAc"), N-methylpyrrolidone ("NMP"), dimethylformamide ("DMF"), ethylene glycol ("EG"), aliphatic alcohols, and mixtures thereof. The buffer material can be present in the liquid medium in an amount from 0.5 to 10 percent by weight. Other weight percentages of buffer material may be used depending upon the liquid medium. The buffer layer can be applied by any continuous or

21 discontinuous liquid deposition technique. In one embodiment, the buffer layer is applied by spin coating. In one embodiment, the buffer layer is applied by ink jet printing. After liquid deposition, the liquid medium can be removed in air, in an inert atmosphere, or by vacuum, at room temperature or with heating. In one embodiment, the layer is heated to a temperature less than 275°C. In one embodiment, the heating temperature is between 100⁰C and 275°C. In one embodiment, the heating temperature is between 100⁰C and 120⁰C. In one embodiment, the heating temperature is between 120⁰C and 140⁰C. In one embodiment, the heating temperature is between 140⁰C and 160⁰CIn on embodiment, the heating temperature is between 160⁰C and 180⁰C. In one embodiment, the heating temperature is between 180⁰C and 200⁰C. In one embodiment, the heating temperature is between 200°C and 220⁰CIn one embodiment, the heating temperature is between 190⁰C am 220⁰C In one embodiment, the heating temperature is between 220°C and 240⁰C. In one embodiment, the heating temperature is between 240⁰C and 260°C. In one embodiment, the heating temperature is between 260⁰C and 275°C The heating time is dependent upon the temperature, and is generally between 5 and 60 minutes. In one embodiment, the final layer thickness is between 5 and 200 nm. In one embodiment, the final layer thickness is between 5 and 40 nm. In one embodiment, the final layer thickness is between 40 and 80 nm. In one embodiment, the final layer thickness is between 80 and 120 nm. In one embodiment, the final layer thickness is between 120 and 160 nm. In one embodiment, the final layer thickness is between 160 and 200 nm.

The hole transport layer can be deposited from any liquid medium in which it is dissolved or dispersed and from which it will form a film. In one embodiment, the liquid medium consists essentially of one or more organic solvents. In one embodiment, the liquid medium consists essentially of water or water and an organic solvent. In one embodiment the organic solvent is an aromatic solvent. In one embodiment, the organic liquid is selected from chloroform, dichloromethane, toluene, xylene, anisole, and mixtures thereof. The hole transport material can be present in the liquid medium in a concentration of 0.2 to 2 percent by weight. Other weight percentages of hole transport material may be used depending upon the liquid medium. The hole transport layer can be applied by any continuous or discontinuous liquid deposition technique. Ir one embodiment, the hole transport layer is applied by spin coating. In

22 one embodiment, the hole transport layer is applied by ink jet printing. After liquid deposition, the liquid medium can be removed in air, in an ine atmosphere, or by vacuum, at room temperature or with heating. In one embodiment, the layer is heated to a temperature less than 275°C. In on embodiment, the heating temperature is between 170⁰C and 275°C. In one embodiment, the heating temperature is between 170⁰C and 200⁰C. In one embodiment, the heating temperature is between 19O⁰C and 220⁰C. In one embodiment, the heating temperature is between 210⁰C and 240⁰C. In one embodiment, the heating temperature is between 230⁰C and 270⁰C. The heating time is dependent upon the temperature, and is generally between 5 and 60 minutes. In one embodiment, the fina layer thickness is between 5 and 50 nm. In one embodiment, the final layer thickness is between 5 and 15 nm. In one embodiment, the final layer thickness is between 15 and 25 nm. In one embodiment, the final layer thickness is between 25 and 35 nm. In one embodiment, the final layer thickness is between 35 and 50 nm.

The photoactive layer can be deposited from any liquid medium in which it is dissolved or dispersed and from which it will form a film. In on« embodiment, the liquid medium consists essentially of one or more organic solvents. In one embodiment, the liquid medium consists essentially of water or water and an organic solvent. In one embodiment the organic solvent is an aromatic solvent. In one embodiment, the organic liquid is selected from chloroform, dichloromethane, toluene, anisole, and mixtures thereof. The photoactive material can be present ir the liquid medium in a concentration of 0.2 to 2 percent by weight. Other weight percentages of photoactive material may be used depending upon the liquid medium. The photoactive layer can be applied by any continuous or discontinuous liquid deposition technique. In one embodiment, the photoactive layer is applied by spin coating. In one embodiment, the photoactive layer is applied by ink jet printing. After liquid deposition, the liquid medium can be removed in air, in an inert atmosphere, or by vacuum, at room temperature or with heating. In one embodiment, the deposited layer is heated to a temperature that is less than the Tg of the material having the lowest Tg. In one embodiment, the heating temperature is at least 10⁰C less than the lowest Tg. In one embodiment, the heating temperature is at least 20°C less than the lowes Tg. In one embodiment, the heating temperature is at least 30⁰C less thar the lowest Tg. In one embodiment, the heating temperature is between

23 50°C and 150⁰C. In one embodiment, the heating temperature is betwee 50⁰C and 75°C. In one embodiment, the heating temperature is between 75°C and 100⁰C. In one embodiment, the heating temperature is betwee 100⁰C and 125⁰C. In one embodiment, the heating temperature is between 125°C and 150⁰C. The heating time is dependent upon the temperature, and is generally between 5 and 60 minutes. In one embodiment, the final layer thickness is between 25 and 100 nm. In one embodiment, the final layer thickness is between 25 and 40 nm. In one embodiment, the final layer thickness is between 40 and 65 nm. In one embodiment, the final layer thickness is between 65 and 80 nm. In one embodiment, the final layer thickness is between 80 and 100 nm. The electron transport layer can be deposited by any vapor deposition method. In one embodiment, it is deposited by thermal evaporation under vacuum. In one embodiment, the final layer thickness between 1 and 100 nm. In one embodiment, the final layer thickness is between 1 and 15 nm. In one embodiment, the final layer thickness is between 15 and 30 nm. In one embodiment, the final layer thickness is between 30 and 45 nm. In one embodiment, the final layer thickness is between 45 and 60 nm. In one embodiment, the final layer thickness is between 60 and 75 nm. In one embodiment, the final layer thickness is between 75 and 90 nm. In one embodiment, the final layer thickness is between 90 and 100 nm.

The electron injection layer can be deposited by any vapor deposition method. In one embodiment, it is deposited by thermal evaporation under vacuum. In one embodiment, the vacuum is less than 10^"6 torr. In one embodiment, the vacuum is less than 10^'7 torr. In one embodiment, the vacuum is less than 10^~8 torr. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 400⁰C. In on embodiment, the material is heated to a temperature in the range of 100°ι to 150⁰C. In one embodiment, the material is heated to a temperature in the range of 150⁰C to 200⁰C. In one embodiment, the material is heated to a temperature in the range of 200⁰C to 25O⁰C. In one embodiment, the material is heated to a temperature in the range of 250⁰C to 30O⁰C. In on embodiment, the material is heated to a temperature in the range of 300°< to 350⁰C. In one embodiment, the material is heated to a temperature in the range of 350⁰C to 40O⁰C. In one embodiment, the material is deposited at a rate of 0.5 to 10 A/sec. In one embodiment, the material is deposited at a rate of 0.5 to 1 A/sec. In one embodiment, the material is

24 deposited at a rate of 1 to 2 A/sec. In one embodiment, the material is deposited at a rate of 2 to 3 A/sec. In one embodiment, the material is deposited at a rate of 3 to 4 A/sec. In one embodiment, the material is deposited at a rate of 4 to 5 A/sec. In one embodiment, the material is deposited at a rate of 5 to 6 A/sec. In one embodiment, the material is deposited at a rate of 6 to 7 A/sec. In one embodiment, the material is deposited at a rate of 7 to 8 A/sec. In one embodiment, the material is deposited at a rate of 8 to 9 A/sec. In one embodiment, the material is deposited at a rate of 9 to 10 A/sec. In one embodiment, the final layer thickness is between 0.1 and 3 nm. In one embodiment, the final layer thickness is between 0.1 and 1 nm. In one embodiment, the final layer thickness is between 1 and 2 nm. In one embodiment, the final layer thickness is between 2 and 3 nm.

The cathode can be deposited by any vapor deposition method. Ir one embodiment, it is deposited by thermal evaporation under vacuum. I one embodiment, the vacuum is less than 10^"6 torr. In one embodiment, the vacuum is less than 10^~7 torr. In one embodiment, the vacuum is less than 10^~8 torr. I n one embodiment, the vacuum is less than 10^"6 torr. In one embodiment, the vacuum is less than 10^~7 torr. In one embodiment, the vacuum is less than 10⁸ torr. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 400⁰C. In one embodiment, the material is heated to a temperature in the range of 100°< to 150⁰C. In one embodiment, the material is heated to a temperature in the range of 150⁰C to 200⁰C. In one embodiment, the material is heated to a temperature in the range of 200⁰C to 25O⁰C. In one embodiment, the material is heated to a temperature in the range of 250⁰C to 300⁰C. In on embodiment, the material is heated to a temperature in the range of 300°( to 350⁰C. In one embodiment, the material is heated to a temperature in the range of 350°C to 400⁰C. In one embodiment, the material is deposited at a rate of 0.5 to 10 A/sec. In one embodiment, the material is deposited at a rate of 0.5 to 1 A/sec. In one embodiment, the material is deposited at a rate of 1 to 2 A/sec. In one embodiment, the material is deposited at a rate of 2 to 3 A/sec. In one embodiment, the material is deposited at a rate of 3 to 4 A/sec. In one embodiment, the material is deposited at a rate of 4 to 5 A/sec. In one embodiment, the material is deposited at a rate of 5 to 6 A/sec. In one embodiment, the material is deposited at a rate of 6 to 7 A/sec. In one embodiment, the material is deposited at a rate of 7 to 8 A/sec. In one embodiment, the material is

25 deposited at a rate of 8 to 9 A/sec. In one embodiment, the material is deposited at a rate of 9 to 10 A/sec. In one embodiment, the final layer thickness is between 10 and 10000 nm. In one embodiment, the final layer thickness is between 10 and 1000 nm. In one embodiment, the fina layer thickness is between 10 and 50 nm. In one embodiment, the final layer thickness is between 50 and 100 nm. In one embodiment, the final layer thickness is between 100 and 200 nm. In one embodiment, the fina layer thickness is between 200 and 300 nm. In one embodiment, the fina layer thickness is between 300 and 400 nm. In one embodiment, the fina layer thickness is between 400 and 500 nm. In one embodiment, the final layer thickness is between 500 and 600 nm. In one embodiment, the fina layer thickness is between 600 and 700 nm. In one embodiment, the fina layer thickness is between 700 and 800 nm. In one embodiment, the fina layer thickness is between 800 and 900 nm. In one embodiment, the fina layer thickness is between 900 and 1000 nm. In one embodiment, the final layer thickness is between 1000 and 2000 nm. In one embodiment, the final layer thickness is between 2000 and 3000 nm. In one embodiment, the final layer thickness is between 3000 and 4000 nm. In one embodiment, the final layer thickness is between 4000 and 5000 nm. In one embodiment, the final layer thickness is between 5000 and 6000 nm. In one embodiment, the final layer thickness is between 6000 and 7000 nm. In one embodiment, the final layer thickness is between 7000 and 8000 nm. In one embodiment, the final layer thickness is between 8000 and 9000 nm. In one embodiment, the final layer thickness is between 9000 and 10000 nm.

In one embodiment, the buffer layer is applied by vapor deposition. In one embodiment, it is deposited by thermal evaporation under vacuum. In one embodiment, the vacuum is less than 10^"6 torr. In one embodimeni the vacuum is less than 10^"7 torr. In one embodiment, the vacuum is less than 10^'8 torr. In one embodiment, the vacuum is less than 10^'6 torr. In one embodiment, the vacuum is less than 10^~7 torr. In one embodiment, the vacuum is less than 10^~8 torr. In one embodiment, the material is heated to a temperature in the range of 10O⁰C to 400⁰C. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 150⁰C. In one embodiment, the material is heated to a temperature in

26 the range of 150⁰C to 200⁰C. In one embodiment, the material is heated to a temperature in the range of 200⁰C to 25O⁰C. In one embodiment, the material is heated to a temperature in the range of 250⁰C to 300⁰C. In on embodiment, the material is heated to a temperature in the range of 300° to 350⁰C. In one embodiment, the material is heated to a temperature in the range of 350⁰C to 400⁰C. In one embodiment, the material is deposited at a rate of 0.5 to 10 A/sec. In one embodiment, the material is deposited at a rate of 0.5 to 1 A/sec. In one embodiment, the material is deposited at a rate of 1 to 2 A/sec. In one embodiment, the material is deposited at a rate of 2 to 3 A/sec. In one embodiment, the material is deposited at a rate of 3 to 4 A/sec. In one embodiment, the material is deposited at a rate of 4 to 5 A/sec. In one embodiment, the material is deposited at a rate of 5 to 6 A/sec. In one embodiment, the material is deposited at a rate of 6 to 7 A/sec. In one embodiment, the material is deposited at a rate of 7 to 8 A/sec. In one embodiment, the material is deposited at a rate of 8 to 9 A/sec. In one embodiment, the material is deposited at a rate of 9 to 10 A/sec. In one embodiment, the final layer thickness is between 5 and 200 nm. In one embodiment, the final layer thickness is between 5 and 30 nm. In one embodiment, the final layer thickness is between 30 and 60 nm. In one embodiment, the final layer thickness is between 60 and 90 nm. In one embodiment, the final layer thickness is between 90 and 120 nm. In one embodiment, the final layer thickness is between 120 and 150 nm. In one embodiment, the final layer thickness is between 150 and 280 nm. In one embodiment, the final layer thickness is between 180 and 200 nm.

In one embodiment, the hole transport layer is applied by vapor deposition. In one embodiment, it is deposited by thermal evaporation under vacuum. In one embodiment, the vacuum is less than 10^"6 torr. In one embodiment, the vacuum is less than 10^~7 torr. In one embodiment, the vacuum is less than 10^"8 torr. In one embodiment, the vacuum is less than 10^'6 torr. In one embodiment, the vacuum is less than 10^'7 torr. In one embodiment, the vacuum is less than 10^"8 torr. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 400⁰C. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 15O⁰C. In one embodiment, the material is heated to a temperature in the range of 150⁰C to 200⁰C. In one embodiment, the material is heated to a temperature in the range of 200⁰C to 250⁰C. In om embodiment, the material is heated to a temperature in the range of 250⁰C

27 to 300°C. In one embodiment, the material is heated to a temperature in the range of 300⁰C to 35O⁰C. In one embodiment, the material is heated to a temperature in the range of 350⁰C to 40O⁰C. In one embodiment, the material is deposited at a rate of 0.5 to 10 A/sec. In one embodiment, the material is deposited at a rate of 0.5 to 1 A/sec. In one embodiment, the material is deposited at a rate of 1 to 2 A/sec. In one embodiment, the material is deposited at a rate of 2 to 3 A/sec. In one embodiment, the material is deposited at a rate of 3 to 4 A/sec. In one embodiment, the material is deposited at a rate of 4 to 5 A/sec. In one embodiment, the material is deposited at a rate of 5 to 6 A/sec. In one embodiment, the material is deposited at a rate of 6 to 7 A/sec. In one embodiment, the material is deposited at a rate of 7 to 8 A/sec. In one embodiment, the material is deposited at a rate of 8 to 9 A/sec. In one embodiment, the material is deposited at a rate of 9 to 10 A/sec. In one embodiment, the final layer thickness is between 5 and 200 nm. In one embodiment, the final layer thickness is between 5 and 30 nm. In one embodiment, the final layer thickness is between 30 and 60 nm. In one embodiment, the final layer thickness is between 60 and 90 nm. In one embodiment, the final layer thickness is between 90 and 120 nm. In one embodiment, the final layer thickness is between 120 and 150 nm. In one embodiment, the final layer thickness is between 150 and 280 nm. In one embodiment, the final layer thickness is between 180 and 200 nm.

In one embodiment, the photoactive layer is applied by vapor deposition. In one embodiment, it is deposited by thermal evaporation under vacuum. In one embodiment, the photoactive layer consists essentially of a single electroluminescent compound, which is deposited by thermal evaporation under vacuum. In one embodiment, the vacuum i less than 10^"6 torr. In one embodiment, the vacuum is less than 10^"7 torr. In one embodiment, the vacuum is less than 10^'8 torr. In one embodimen the vacuum is less than 10^"6 torr. In one embodiment, the vacuum is less than 10^'7 torr. In one embodiment, the vacuum is less than 10^"8 torr. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 40O⁰C. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 150⁰C. In one embodiment, the material is heated to a temperature in the range of 150⁰C to 200⁰C. In on' embodiment, the material is heated to a temperature in the range of 200°< to 250⁰C. In one embodiment, the material is heated to a temperature in the range of 250⁰C to 300⁰C. In one embodiment, the material is heated

28 to a temperature in the range of 300⁰C to 350⁰C. In one embodiment, the material is heated to a temperature in the range of 350⁰C to 400⁰C. In on embodiment, the material is deposited at a rate of 0.5 to 10 A/sec. In one embodiment, the material is deposited at a rate of 0.5 to 1 A/sec. In one embodiment, the material is deposited at a rate of 1 to 2 A/sec. In one embodiment, the material is deposited at a rate of 2 to 3 A/sec. In one embodiment, the material is deposited at a rate of 3 to 4 A/sec. In one embodiment, the material is deposited at a rate of 4 to 5 A/sec. In one embodiment, the material is deposited at a rate of 5 to 6 A/sec. In one embodiment, the material is deposited at a rate of 6 to 7 A/sec. In one embodiment, the material is deposited at a rate of 7 to 8 A/sec. In one embodiment, the material is deposited at a rate of 8 to 9 A/sec. In one embodiment, the material is deposited at a rate of 9 to 10 A/sec. In one embodiment, the final layer thickness is between 5 and 200 nm. In one embodiment, the final layer thickness is between 5 and 30 nm. In one embodiment, the final layer thickness is between 30 and 60 nm. In one embodiment, the final layer thickness is between 60 and 90 nm. In one embodiment, the final layer thickness is between 90 and 120 nm. In one embodiment, the final layer thickness is between 120 and 150 nm. In one embodiment, the final layer thickness is between 150 and 280 nm. In one embodiment, the final layer thickness is between 180 and 200 nm.

In one embodiment, the photoactive layer comprises two electroluminescent materials, each of which is applied by thermal evaporation under vacuum. Any of the above listed vacuum conditions and temperatures can be used. Any of the above listed deposition rates can be used. The relative deposition rates can be from 50:1 to 1:50. In one embodiment, the relative deposition rates are from 1:1 to 1:3. In one embodiment, the relative deposition rates are from 1 :3 to 1 :5. In one embodiment, the relative deposition rates are from 1 :5 to 1 :8. In one embodiment, the relative deposition rates are from 1 :8 to 1 :10. In one embodiment, the relative deposition rates are from 1:10 to 1:20. In one embodiment, the relative deposition rates are from 1:20 to 1:30. In one embodiment, the relative deposition rates are from 1 :30 to 1 :50. The total thickness of the layer can be the same as that described above for a single-component photoactive layer.

In one embodiment, the photoactive layer comprises one electroluminescent material and at least one host material, each of which is applied by thermal evaporation under vacuum. Any of the above listed

29 vacuum conditions and temperatures can be used. Any of the above listed deposition rates can be used. The relative deposition rate of electroluminescent material to host can be from 1 :1 to 1 :99. In one embodiment, the relative deposition rates are from 1:1 to 1 :3. In one embodiment, the relative deposition rates are from 1:3 to 1:5. In one embodiment, the relative deposition rates are from 1 :5 to 1:8. In one embodiment, the relative deposition rates are from 1:8 to 1:10. In one embodiment, the relative deposition rates are from 1 :10 to 1 :20. In one embodiment,' the relative deposition rates are from 1 :20 to 1:30. In one embodiment, the relative deposition rates are from 1:30 to 1:40. In one embodiment, the relative deposition rates are from 1:40 to 1:50. In one embodiment, the relative deposition rates are from 1:50 to 1:60. In one embodiment, the relative deposition rates are from 1:60 to 1 :70. In one embodiment, the relative deposition rates are from 1:70 to 1:80. In one embodiment, the relative deposition rates are from 1 :80 to 1 :90. In one embodiment, the relative deposition rates are from 1:90 to 1 :99. The tota thickness of the layer can be the same as that described above for a single-component photoactive layer.

In one embodiment, the electron transport layer is applied by vapoi deposition. In one embodiment, it is deposited by thermal evaporation under vacuum. In one embodiment, the vacuum is less than 10 ^s torr. In one embodiment, the vacuum is less than 10^~7 torr. In one embodiment, the vacuum is less than 10^"8 torr. In one embodiment, the vacuum is less than 10^"6 torr. In one embodiment, the vacuum is less than 10^"7 torr. In one embodiment, the vacuum is less than 10^"8 torr. In one embodiment, the material is heated to a temperature in the range of 100⁰C to 400⁰C. Ir one embodiment, the material is heated to a temperature in the range of 100⁰C to 15O⁰C. In one embodiment, the material is heated to a temperature in the range of 150⁰C to 200⁰C. In one embodiment, the material is heated to a temperature in the range of 200⁰C to 250⁰C. In om embodiment, the material is heated to a temperature in the range of 250°( to 300⁰C. In one embodiment, the material is heated to a temperature in the range of 300⁰C to 350⁰C. In one embodiment, the material is heated to a temperature in the range of 350⁰C to 400⁰C. In one embodiment, the material is deposited at a rate of 0.5 to 10 A/sec. In one embodiment, the material is deposited at a rate of 0.5 to 1 A/sec. In one embodiment, the material is deposited at a rate of 1 to 2 A/sec. In one embodiment, the material is deposited at a rate of 2 to 3 A/sec. In one embodiment, the

30 material is deposited at a rate of 3 to 4 A/sec. In one embodiment, the material is deposited at a rate of 4 to 5 A/sec. In one embodiment, the material is deposited at a rate of 5 to 6 A/sec. In one embodiment, the material is deposited at a rate of 6 to 7 A/sec. In one embodiment, the material is deposited at a rate of 7 to 8 A/sec. In one embodiment, the material is deposited at a rate of 8 to 9 A/sec. In one embodiment, the material is deposited at a rate of 9 to 10 A/sec. In one embodiment, the final layer thickness is between 5 and 200 nm. In one embodiment, the final layer thickness is between 5 and 30 nm. In one embodiment, the final layer thickness is between 30 and 60 nm. In one embodiment, the final layer thickness is between 60 and 90 nm. In one embodiment, the final layer thickness is between 90 and 120 nm. In one embodiment, the final layer thickness is between 120 and 150 nm. In one embodiment, the final layer thickness is between 150 and 280 nm. In one embodiment, the final layer thickness is between 180 and 200 nm.

In one embodiment, the electron injection layer is applied by vapor deposition, as described above.

As used herein, the term "hole transport" when referring to a layer, material, member, or structure, is intended to mean such layer, material, member, or structure facilitates migration of positive charges through the

31 thickness of such layer, material, member, or structure with relative efficiency and small loss of charge.

The term "anti-quenching composition" is intended to mean a material which prevents, retards, or diminishes both the transfer of energy and the transfer of an electron to or from the excited state of the photoactive layer to an adjacent layer.

The term "group" is intended to mean a part of a compound, such as a substituent in an organic compound. The prefix "hetero" indicates the one or more carbon atoms have been replaced with a different atom. The prefix "fluoro" indicates that one or more hydrogens have been replaced with a fluorine.

The term "alkyl" is intended to mean a group derived from an aliphatic hydrocarbon having one point of attachment, which group may b unsubstituted or substituted. In one embodiment, alkyl groups may have

1-20 carbon atoms. The term "aryl" is intended to mean a group derived from an aromatic hydrocarbon having one point of attachment, which group may be unsubstituted or substituted. In one embodiment, the aryl group may have 6-30 carbon atoms. In one embodiment, a heteroaryl group may have 2-30 carbon atoms. The term "alkoxy" is intended to mean the group -OR, where R is alkyl. The term "aryloxy" is intended to mean the group -OR, where R is aryl.

Unless otherwise indicated, all groups can be unsubstituted or substituted. The phrase "adjacent to," when used to refer to layers in a device, does not necessarily mean that one layer is immediately next to another layer. On the other hand, the phrase "adjacent R groups," is usec to refer to R groups that are next to each other in a chemical formula (i.e.,

R groups that are on atoms joined by a bond). The term "compound" is intended to mean an electrically unchargec substance made up of molecules that further consist of atoms, wherein th« atoms cannot be separated by physical means.

32 The term "copolymer" is intended to encompass oligomeric specie and include materials having 2 or more monomeric units. In addition, the IUPAC numbering system is used throughout, where the groups from the Periodic Table are numbered from left to right as 1 through 18 (CRC Handbook of Chemistry and Physics, 81^st Edition, 2000).

As used herein, "solution processing" means processes that includ depositing from a liquid medium. The liquid medium can be in the form o a solution, a dispersion, an emulsion, or other forms.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Unless otherwise

33 defined, all letter symbols in the figures represent atoms with that atomic abbreviation. Although methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present invention, suitable methods and materials are described below.

EXAMPLES

The following examples illustrate certain features and advantages of the present invention. They are intended to be illustrative of the invention, but not limiting. All percentages are by weight, unless otherwis indicated.

Example 1

This example illustrates the synthesis of Copolymer 12:

Bis(1 ,5-Cyclooctadiene)-nickel-(0) (1.667 g, 6.06 mmol ) was adde to a N,N-dimethylformamide (anhydrous, 6 ml_) solution 2,2'-bipyridyl (0.946 g, 6.06 mmol) and 1 ,5-cyclooctadiene (0.656 g, 6.06 mmol). The resulting mixture was heated to 6OC for 30 min. A toluene (anhydrous, 2i mL) solution of 9,9-dioctyl-2,7-dibromofluorene (0.658 g, 1.20 mmol), N₁N Bis(4-bromomphenyl)-N,N'-diphenylbenzidine (0.776g, 1.20 mmol), N, N- Bis(4-chlorophenyl)-3-vinylaniline (0.204 g, 0.60 mmol) was then added rapidly to the stirring catalyst mixture. The mixture was stirred at 6OC for ten hours. After the reaction mixture cooled to room temperature, it was poured, slowly, with vigorous stirring into 500 mL methanol and stirred overnight. Addition of 2OmL of cone. HCI followed and stirring for an hour. The precipitate was filtered and then added to 125 mL of toluene and

34 poured slowly into 1 L of 1:1 methanohacetone solution which contained 2 mL cone. HCI. The resulting yellow precipitate was stirred for 30 min and then isolated by filtration. The solid was further purified by chromatography (silica, toluene) and precipitation from ethyl acetate. Afte drying the resulting material under vacuum a light yellow polymer was isolated in 80% yield (0.97 g). GPC (THF, room temperature): Mn = 60,616; Mw = 365,589; Mw/Mn = 5.98.

It is to be appreciated that certain features are, for clarity, describe herein in the context of separate embodiments, may also be provided in combination in a single embodiment. Conversely, various features that are, for brevity, described in the context of a single embodiment, may alsc be provided separately or in any subcombination. Further, reference to values stated in ranges include each and every value within that range. In some embodiments, the invention herein can be construed as excluding any element or process step that does not materially affect the basic and novel characteristics of the composition or process. Additionally in some embodiments, the invention can be construed as excluding any element or process step not specified herein.

35 The use of numerical values in the various ranges specified herein is stated as approximations as though the minimum and maximum values within the stated ranges were both being preceded by the word "about." Ir this manner slight variations above and below the stated ranges can be used to achieve substantially the same results as values within the range; Also, the disclosure of these ranges is intended as a continuous range including every value between the minimum and maximum average value including fractional values that can result when some of components of one value are mixed with those of different value. Moreover, when broader and narrower ranges are disclosed, it is within the contemplation of this invention to match a minimum value from one range with a maximum value from another range and vice versa.

36

Claims

CLAIMSWhat is claimed is:

1. A copolymer having repeating units derived from at least one first monomer selected from the group consisting of A1 to A5

37 and at least one second monomer selected from the group consisting of A1 to A5, B1 to B7, and C1 to C7,

38

39

wherein:

R¹ = D, alkyl, fluoroalkyl, heteroalkyl, aryl, heteroaryl, alkoxy, fluoroalkoxy N(R-)_2> R",

R" = reactive group

R'" = alkyl, fluoroalkyl, aryl

Ar = independently phenylene, naphthylene, or biphenylene E = O, S, (SiR^ivR^v)_n, (CR^ivR^v)_n, or combinations thereof, and can be different at each occurrence, wherein R^ιv and R^v are each independently selected from H, F, alkyl, aryl, alkoxy, aryloxy, fluoroalkyl, fluoroaryl, fluoroalkoxy, and fluoroaryloxy and wherein R^iv and R^v can, when taken together, form a non-aromatic ring, X = leaving group

Y = alkyl, heteroalkyl, R a = 0 to 4 b = 0 to 20 m = 0 to 5

40 n = 1 to 20 q = 0 to 7; and further wherein the first monomer is different from the second monomer and at least one monomer contains at least one reactive group

2. A copolymer of claim 1 wherein b = 0 or 1.

3. A copolymer of claim 2 wherein b = 0.

4. A copolymer of claim 1 wherein the first monomer is monomer

Al

5. A copolymer of claim 4 wherein a = b = 0.

6. A copolymer of claim 5 wherein R is 3-vinylphenyl.

7. A copolymer selected from Copolymers 1-19:

Copolymer 1

Copolymer 2

41

Copolymer 3

Copolymer 4

a:b:c = 1:2:2

Copolymer 5

a:b:c = 5:3:2

Copolymer 6

42

α:b;c = 1:1:2

Copolymer 7

Copolymer 8

Copolymer 9

Copolymer 10

43

Copolymer 11

Copolymer 12

10 Copolymer 13

Copolymer 14

15

44

Copolymer 15

Copolymer 17

Copolymer 18

. 45

8. A copolymer of claim 7 wherein n is less than or equal to 10⁶. 9. An organic electronic device comprising at least one layer comprising at least one copolymer of claim 1.

10. An organic electronic device of claim 9 wherein the at least on layer is a buffer layer.

11. An organic electronic device of claim 9 wherein the at least on layer is a hole transport layer.

12. An organic electronic device comprising at least one layer comprising at least one copolymer of claim 7.

13. An organic electronic device of claim 12 wherein the at least one layer is a buffer layer. 14. An organic electronic device of claim 12 wherein the at least one layer is a hole transport layer.

15. An organic electronic device of claim 9 wherein the device has the following structure, in order: anode, buffer layer, hole transport layer, photoactive layer, electron transport layer, electron injection layer, cathode.

16. An organic electronic device of claim 12 wherein the device has the following structure, in order: anode, buffer layer, hole transport layer, photoactive layer, electron transport layer, electron injection layer, cathode. 17. A process for making an organic electronic device comprising: providing a liquid comprising a copolymer of claim 1 ; providing an anode; contacting the liquid comprising the copolymer with the anode; removing the liquid from the copolymer to produce a hole transport film;

46 heating to crosslink the copolymer of the hole transport film; providing an emitter; disposing the emitter adjacent to the hole transport film; providing an electron transporter and disposing said electron transporter adjacent to the emitter; and providing a cathode adjacent to the electron transporter.

18. A process for making an organic electronic device comprising: providing a liquid comprising a copolymer of claim 7; providing an anode; contacting the liquid comprising the copolymer with the anode; removing the liquid from the copolymer to produce a hole transport film; heating to crosslink the copolymer of the hole transport film; providing an emitter; disposing the emitter adjacent to the hole transport film; providing an electron transporter and disposing said electron transporter adjacent to the emitter; and providing a cathode adjacent to the electron transporter.

47 and at least one second monomer selected from the group consisting of A1 to A5, B1 to B7, and C1 to C7,

B7

38

39

wherein:

N(R¹¹¹J₂, R",

R" = reactive group

R'" = alkyl, fluoroalkyl, aryl

Ar = independently phenylene, naphthylene, or biphenylene E = O₁ S₁ (SiR^ivR^v)_n> (CR^ivR^v)_n, or combinations thereof, and can be different at each occurrence, wherein R^ιv and R^v are each independently selected from H, F, alkyl, aryl, alkoxy, aryloxy, fluoroalkyl, fluoroaryl, fluoroalkoxy, and fluoroaryloxy and wherein R^ιv and R^v can, when taken together, form a non-aromatic ring, X = leaving group

Y = alkyl, heteroalkyl, R a = 0 to 4 b = 0 to 20 m = 0 to 5

40 n = 1 to 20 q = 0 to 7; and further wherein the first monomer is different from the second monomer and at least one monomer contains at least one reactive group,

2. A copolymer of claim 1 wherein b = 0 or 1.

3. A copolymer of claim 2 wherein b = 0.

4. A copolymer of claim 1 wherein the first monomer is monomer

A1.

5. A copolymer of claim 4 wherein a = b = 0.

6. A copolymer of claim 5 wherein R is 3-vinylphenyl.

7. A copolymer selected from Copolymers 1-19:

Copolymer 1

Copolymer 2

41

Copolymer 3

Copolymer 4

a:b:c = 1:2:2

Copolymer 5

Copolymer 6

42

a:b:c = i:ia

Copolymer 7

a:b = 75:25

Copolymer 8

Copolymer 9

Copolymer 10

43

Copolymer 11

Copolymer 12

10 Copolymer 13

Copolymer 14

15

44

:1

Copolymer 15

10 Copolymer 17

15

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Copolymer 19

8. A copolymer of claim 7 wherein n is less than or equal to 10⁶.

9. An organic electronic device comprising at least one layer comprising at least one copolymer of claim 1.

10. An organic electronic device of claim 9 wherein the at least oni layer is a buffer layer.

11. An organic electronic device of claim 9 wherein the at least on< layer is a hole transport layer.

13. An organic electronic device of claim 12 wherein the at least one layer is a buffer layer.

14. An organic electronic device of claim 12 wherein the at least one layer is a hole transport layer.

16. An organic electronic device of claim 12 wherein the device has the following structure, in order: anode, buffer layer, hole transport layer, photoactive layer, electron transport layer, electron injection layer, cathode.

17. A process for making an organic electronic device comprising: providing a liquid comprising a copolymer of claim 1; providing an anode; contacting the liquid comprising the copolymer with the anode; removing the liquid from the copolymer to produce a hole transport film;

18. A process for making an organic electronic device comprising providing a liquid comprising a copolymer of claim 7; providing an anode; contacting the liquid comprising the copolymer with the anode; removing the liquid from the copolymer to produce a hole transpor film; heating to crosslink the copolymer of the hole transport film; providing an emitter; disposing the emitter adjacent to the hole transport film; providing an electron transporter and disposing said electron transporter adjacent to the emitter; and providing a cathode adjacent to the electron transporter.

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