WO2007067838A2 - Elements inductifs en spirale a nanostructures unidimensionnelles - Google Patents

Elements inductifs en spirale a nanostructures unidimensionnelles Download PDF

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Publication number
WO2007067838A2
WO2007067838A2 PCT/US2006/060936 US2006060936W WO2007067838A2 WO 2007067838 A2 WO2007067838 A2 WO 2007067838A2 US 2006060936 W US2006060936 W US 2006060936W WO 2007067838 A2 WO2007067838 A2 WO 2007067838A2
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WO
WIPO (PCT)
Prior art keywords
network
dimensional nanostructures
inductor
substrate
parallel
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PCT/US2006/060936
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English (en)
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WO2007067838A3 (fr
Inventor
Shawn G. Thomas
Vida Ilderem
Papu D. Maniar
George N. Maracas
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Motorola Inc.
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Application filed by Motorola Inc. filed Critical Motorola Inc.
Publication of WO2007067838A2 publication Critical patent/WO2007067838A2/fr
Publication of WO2007067838A3 publication Critical patent/WO2007067838A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/0046—Printed inductances with a conductive path having a bridge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Definitions

  • the present invention generally relates to one dimensional nanostructures and more particularly to one dimensional nanostructurc inductors.
  • One dimensional nanostructures such as belts, rods, tubes and wires, have become the latest focus of intensive research with their own unique applications.
  • One dimensional nanostructures are model systems to investigate the dependence of electrical and thermal transport or mechanical properties as a function of size reduction.
  • zero-dimensional, e.g., quantum dots, and two-dimensional nanostructures e.g., GaAs/AlGaAs heterojunctions and superlattices
  • direct synthesis and growth of one dimensional nanostructures has been relatively slow due to difficulties associated with controlling the chemical composition, dimensions, and morphology.
  • various one dimensional nanostructures have been fabricated using a number of advanced nanolithographic techniques, such as electron- beam (e-beam), focused-ion-beam (FIB) writing, and scanning probe.
  • e-beam electron- beam
  • FIB focused-ion-beam
  • Carbon nanotubes are one of the most important species of one dimensional nanostructures. Carbon nanotubes arc one of four unique crystalline structures for carbon, the other three being diamond, graphite, and fullerene.
  • carbon nanotubes refer to a helical tubular structure grown with a single wall (single-walled nanotubes) or multiple walls (multi-walled nanotubes). These types of structures are obtained by rolling single layers of graphene sheets into cylinders forming a plurality of hexagons on the tubes' surface. The sheet is a close packed array of carbon atoms having no dangling bonds.. Carbon nanotubes typically have a diameter on the order of a fraction of a nanometer to a few hundred nanometers.
  • Carbon nanotube is any elongated carbon structure.
  • Carbon nanotubes can function as either a conductor (metallic) or a semiconductor, according to the rolled shape (chirality) and the diameter of the helical tubes.
  • metallic nanotubes With metallic nanotubes, a one dimensional carbon-based structure can conduct a current at room temperature with essentially no resistance. Further, electrons can be considered as moving freely through the structure, so that metallic nanotubes can be used as ideal interconnects.
  • the structure can function as a field effect transistor wherein the nanotubes can be switched from a conducting to an insulating state by applying a voltage to a top or bottom gate electrode.
  • molecules can be attached or absorbed onto the sidewalls of the semiconducting tubes to form an effective "gate” and thus change the current through the tube.
  • the current through the tube is controlled by the number of molecules adsorbed and thus the device acts as a very sensitive liquid or gas sensor. Therefore, carbon nanotubes are potential building blocks for nanoelectronic and sensor devices because of their unique structural, physical, and chemical properties. f0005] Another class of one dimensional nanostrucrures is nanowires.
  • Nanowires of inorganic materials have been grown from metal (Ag, Au), elemental semiconductors (e.g., Si, and Ge), III-V semiconductors (e.g., GaAs, GaN, GaP, InAs, and InP), II- VI semiconductors (e.g., CdS, CdSe, ZnS, and ZnSe) and oxides (e.g., SiO 2 and ZnO). Similar to carbon nanotubes, inorganic nanowires can be synthesized with various diameters and length, depending on the synthesis technique and/or desired application needs.
  • an electrical inductor for use in RF integrated circuits comprising one dimensional nanostructures having lower resistance than traditional metal inductors such as copper or aluminum. It is also desirable to provide an electrical inductor comprising one dimensional nanostructures for chemical, biological, magnetic flux sensing. Furthermore, other desirable features and characteristics of the present invention will become apparent from the subsequent detailed description of the invention and the appended claims, taken in conjunction with the accompanying drawings and this background of the invention.
  • a method for making an inductor comprising optionally forming a catalytic material over a substrate; and creating a network of one dimensional nanostructures on the catalytic material or the substrate, the network providing an inductance when a voltage is applied thereacross.
  • the one dimensional nanostructures may also be used to sense gasses, radiation, magnetic flux, for example.
  • FIGs. 1-2 and 4-9 are partial cross-sectional views of different stages of fabrication of a first exemplary embodiment
  • FIG. 3 is a top view of the first exemplary embodiment of FIG. 2;
  • FIG. 10 is a top view of the first exemplary embodiment of FIG. 9;
  • FIG. 11 is a top view of a second exemplary embodiment
  • FIG. 12 is a partial cross-sectional view of a third exemplary embodiment
  • FIGS. 13 and 14 are partial cross-sectional views of different stages of fabrication of a fourth exemplary embodiment
  • FTG. 15 is a top view of an alternate method of depositing a catalyst material in the first exemplary embodiment
  • FIGS. 16-18 are top views and a partial cross-sectional view of different stages of fabrication of a fifth exemplary embodiment
  • FIGS. 19-21 are top views and a partial cross-sectional view of different stages of fabrication of a sixth exemplary embodiment
  • FIG. 22 is a top view of a seventh exemplary embodiment
  • FIGS. 23 and 24 are a partial cross-sectional view and a top view of an eighth exemplary embodiment
  • FIG. 25 is a partial side view of a first exemplary embodiment of a second application
  • FTG. 26 is a partial side view of a second exemplary embodiment of the second application;
  • FIG. 27 is a partial cross-sectional view of an exemplary embodiment of a sensor application;
  • FIG. 28 is a schematic of an electrical representation of the embodiment of FIG. 27.
  • FIG. 29 is a partial cross-sectional view of an exemplary embodiment of another sensor application.
  • One dimensional nanostructures such as nanotubes and nanowires show promise for the development of molecular-scale sensors, resonators, field emission displays, and logic/memory elements.
  • One dimensional nanostructures is herein defined as a material having a high aspect ratio of greater than 10 to 1 (length to diameter).
  • CVD chemical vapor deposition
  • the CVD approach allows for the growth of fairly uniform one dimensional nanostructures by controlling the size of catalytic nanoparticles.
  • the diameters of single walled nanotubes are typically proportionally related to the sizes of the catalytic nanoparticles used in the CVD process.
  • the positioning of individual carbon nanotubes at specific locations has previously been challenging and is not amenable to scale-up of a large number of devices.
  • a formation of one dimensional nanostructures is disclosed for use in two applications: as an on-chip inductor for electronic circuitry and as a frequency shift sensor.
  • Several embodiments are described herein for forming channels of nanostructures on or above a substrate that provide an inductance having a high Q and a reduced die size for RF circuits.
  • Several embodiments are also described for use of the nanostructure to sense gasses, radiation, magnetic field, and the like.
  • a first exemplary embodiment of the structure 10 comprises a dielectric layer 14 deposited over the substrate 12.
  • the substrate 12 may comprise most any substrate know in the semiconductor industry, e.g., glass, silicon, gallium arsenide, indium phosphide, silicon carbide, gallium nitride, and flexible materials such as Mylar and Kapton, but more preferably (for high frequency applications) comprises a material having high resistivity such as quartz or sapphire.
  • the dielectric layer 14 preferably comprises a silicon dioxide or silicon nitride.
  • a photo etch layer 16 is deposited on the dielectric layer 14.
  • the photo etch layer 16 is patterned and etched in a manner know to those in the industry (e.g., photolithography, electron beam lithography, and imprint lithography) to form regions 18 and channels 20.
  • Channels 20 form a spiral 22, but, in other embodiments, could form other figures including circular or octagonal.
  • Regions 18 and channels 20 comprise a width of at least 0.5 micrometers to 50 micrometers.
  • the dielectric layer 14 is etched in a first exemplary embodiment to expose a surface 24 of the substrate 12 (FIG. 4).
  • a catalytic layer 28 is deposited on a surface 26 of the photo etch layer 16 and the surface 24.
  • suitable catalytic material which may comprise catalytic nanoparticles
  • suitable catalytic material include titanium, vanadium, chromium, manganese, copper, zirconium, niobium, molybdenum, silver, hafnium, tantalum, tungsten, rhenium, gold, ruthenium, rhodium, palladium, osmium, indium, platinum, nickel, iron, cobalt, or a combination thereof.
  • one dimensional nanostructures 30, such as belts, rods, tubes and wires, and more preferably carbon nanotubes., are grown within the channel 20 on the surface 24 in a manner known to those skilled in the industry.
  • the one dimensional nanostructures 30 may be grown by plasma enhanced chemical vapor deposition, high frequency chemical vapor deposition, or thermal vapor deposition.
  • the one dimensional nanostructures 30 preferably will be longer than 1 micrometer, but generally, the longer the better.
  • the depth of the channel 20 will depend on the desired length of the one dimensional nanostructures 30.
  • the one dimensional nanostructures 30 may be grown by any method known in the industry, one preferred way of growing carbon nanotubes is as follows.
  • a chemical vapor deposition (CVD) is performed by exposing the structure 10 to hydrogen (Bb) and a carbon containing gas, for example methane (CH 4 ), between 45O 0 C and 1000 0 C, but preferably between 55O 0 C and 85O 0 C.
  • CVD is the preferred method of growth because the variables such as temperature, gas input, and catalyst may be controlled.
  • Carbon nanotubes 30 are thereby grown from the catalytic layer 28 forming a network 32 (i.e., mesh) of connected carbon nanotubes 30.
  • the carbon nanotubes 30 may grow as either in metallic or semiconducting forms. Since highly conducting nanotubes arc preferred, semiconducting single walled nanotubes can be doped with potassium, for example, to increase the intrinsic conductivity.
  • the one dimensional nanostructures 30 may be grown in any manner known to those skilled in the art, and are typically 100 nm to 1 cm in length and less than 1 nm to 100 nm in diameter.
  • Some of the one dimensional nanostructures 30 may extend out of the channels 20 onto the surface 26 of the dielectric layer 14. This could cause shorting between channels 20 if the one dimensional nanostructures 30 would make contact across the regions 18. Therefore, a photoresist material 34 is deposited in the channels 20 and over the regions 18. The photoresist material 34 is then etched away from the regions 18, exposing the one dimensional nanostructures 30 overlying the regions 18 (FIG. 6), which are then etched away, for example, with an O 2 plasma etch and the photoresist material 34 may be etched away (FIG. 7).
  • a photoresist material 36 is deposited over the structure 10 and patterned to provide openings 38 (at each end of the spiral 22).
  • a metal 40 is then evaporated onto the photoresist material 36 and into the openings 38 to make contact with the network 32 of one dimensional nanostructures 30.
  • the metal 40 may comprise any conductive material, but preferably would comprise gold, titanium, aluminum, chromium, or silver.
  • the photoresist material 36 is then removed (including the metal 40 above the photoresist material 36 and above the regions 18), leaving conductive electrodes 42 (FIGS. 9 and 10).
  • the conductive electrodes 42 may be coupled by vias or air-bridges, for example, to other points within an integrated circuit residing on the substrate 12.
  • a 3-port inductor or a transformer may be fabricated in a similar fashion.
  • This exemplary embodiment of a 3- port inductor comprises an octagon shaped inductor 41 having conductive electrodes 42 connected at its ends and a third conductive electrode 43 connected in the middle of the electrical path of the inductor 41.
  • the sections of the inductor 41 are coupled by conductive material 45 on a different layer of the one dimensional nanostructures 30 using vias 47.
  • the third conductive electrode 43 is coupled to the mid-point of the inductor 41 by conductive material 49 using vias 51.
  • a third exemplary embodiment comprises depositing a protective layer 46 in the channels 20 and over the regions 18 (FIG. 5).
  • the protective layer 46 may comprise a dielectric material such as silicon nitride.
  • a photoresist material 48 is deposited on the protective layer, patterned, and etched to provide sections 50 generally above channels 20.
  • the protective layer 46 above regions 18 and any one dimensional nanostructures 30 above regions 18, are etched by performing a dry plasma etching process, wet chemical etching, or a combination thereof resulting in the structure 10 shown in FIG. 14.
  • the photoresist material 48 and the remaining protective layer 46 are removed resulting in the structure shown in FIG. 7.
  • an alternate method of the first exemplary embodiment comprises depositing the catalytic layer 28 on the sidewalls of the channels 20 in order to directionally grow the one dimensional nanostructures 30 along the channel 20. Any of the one dimensional nanostructures 30 growing out of the channels 20 onto the regions 18 may be etched as described previously.
  • the catalytic layer 28 is shown as being positioned at the end of each channel 20, it should be understood that the catalytic layer 28 may also be positioned along the length of each channel 20.
  • a fourth exemplary embodiment is shown in a side view, FIG. 16, and a top view, FIG. 17, wherein the catalyst 28 is formed on the substrate 12 and a mesh or network of one dimensional nanostructures 30 are grown on the catalyst 28 using materials and processes mentioned above.
  • a photo-etch layer 16 is patterned, and the one dimensional nanostructures and catalyst 28 not protected by the patterned photo- etch layer 16 are removed. The photo-etch layer 16 is then removed, leaving the spiral coil 22 as shown in FIG. 18.
  • a fifth exemplary embodiment is shown in a side view, FIG. 19, and a top view, FTG. 20, wherein the catalyst 28 is formed on the substrate 12 and a plurality of directionally aligned and parallel one dimensional nanostructures 70 are grown on the catalyst 28 using materials and processes mentioned above.
  • the aligned one-dimensional nanostructures are grown on a quartz substrate that is ST-cut at an angle of 42 degrees and 45 minutes. Since it is the surface terraces that help to determine the degree of alignment of the nanostructures as well as the density of the nanostructures, those skilled in the art can appreciate that this technique is not limited to quartz substrates.
  • the aligned carbon nanotubes can be transferred onto the desired substrate using a stamping process.
  • the conductance along the length of a one dimensional nanostructurc is greater than the conductance across a plurality of nanotubes. Therefore, the conductance of section 72 of FIG. 21 is greater than section 74.
  • This lower conductance of section 74 may be overcome (a sixth exemplary embodiment) by patterning metal 76 instead of growing the parallel one dimensional nanostructures 70 in section 74. Tn such a configuration it is preferable for the geometry of the coil structure to be rectangular such that the side composed of higher conductivity material (72) is longer than the side composed of the lower conductivity material (74, 76).
  • Yet another alternative method would be to form a network (mesh) of nanostructures and then place them on a substrate.
  • a photo-etch layer 16 is patterned, and the one dimensional nanostructures and catalyst 28 not protected by the patterned photo-etch layer 16 are removed.
  • the photo-etch layer 16 is then removed, leaving the spiral coil 22 as shown in FIG. 21.
  • a seventh exemplary embodiment is shown in a side view, FIG. 22, and a top view, FIG. 23, wherein an optional dielectric layer 78 is formed over the parallel one dimensional nanostructures 70.
  • a second layer of parallel one dimensional nanostructures 80 are grown either on the dielectric layer 78 or directly on the first layer of parallel one dimensional nanostructures 70, but generally orthogonal to the first layer of parallel one dimensional nanostructures.
  • vias 82 are then formed of metal to make contact between the parallel one dimensional nanostructures 70 and second parallel one dimensional nanostructures 80.
  • the vias 82 may comprise one dimensional nanostructures grown in a direction perpendicular to the one dimensional nanostructures 70.
  • the second parallel one dimensional nanostructures are grown directly on the parallel one dimensional nanostructures 70, contact is made directly therebetween.
  • the spiral 22 fabricated by any of the embodiments described above and other embodiments not described provide, in a first application, an electrical inductor coupled between conductive electrodes 42 for use in RF integrated circuits.
  • the inductor comprises a network 32 of one dimensional nanostructures 30 instead of traditional metals such as copper or aluminum.
  • this inductor has lower resistance than traditional metal inductors and thus has a higher Q factor.
  • the carbon nanotube being an example of a one-dimensional nanostructure, has the added benefit of being immune to skin effect.
  • traditional metals as the frequency of operation increases, the effective thickness of the metal is reduced as current is crowded to the outermost shell of the metal line. This results in an increase in the effective resistance of the metal and thus degrades the Q factor.
  • the current transport is already confined to the outermost shell of the tube and this should be frequency independent.
  • a first embodiment of the sensor application is shown in FIG. 24, wherein one dimensional nanostructures 82 of any form, e.g., mesh or parallel, are grown on the catalyst 28.
  • the nanostructures are patterned as described previously to form an inductor coil.
  • a sensing layer 84 such as a ferromagnetic, piezoelectric, electro-optic, or a similar layer is deposited over the one dimensional nanostructures 22.
  • the sensing layer 84 senses a change in the appropriate field, e.g., magnetic, and which in turn, changes the properties of the one dimensional nanostructures 82 and the resonant frequency thereof.
  • FIG. 25 A second embodiment of the sensor application is shown in FIG. 25, wherein the sensing layer 84 is contacted by metal electrodes 86 deposited on the sensing layer 84. Tn this embodiment, an electrical potential applied between electrodes 86 contacting the charge sensitive layer results in a change in the charge within that layer. This in turn impacts the resonant frequency of the one dimensional nanostructure 22. Using passive RF probing of the coil structure 22, a change in the state of the charge sensitive layer can be detected.
  • the next three embodiments are as an environmental sensor.
  • a molecule attaches itself to a nano-structure, such as a carbon nanotube
  • a characteristic of the material changes, such as the change in a current flowing in the nanotube that is measurable in a manner known to those skilled in the art.
  • a carbon nanotube is the preferred embodiment of the nano-structure, other embodiments would include all other nano-structures with a high aspect ratio (length versus width), for example, carbon fibers, metal nanowires, semiconductor nano-wires, and nano-ribbons.
  • the nano-structure may be coated with a substance for determining specific environmental agents.
  • a frequency shift is the preferred embodiment for the measurable material characteristic
  • other embodiments would include, for example, current, magnetic, optical, and mechanical.
  • the first exemplary environmental sensor embodiment comprises the coil as shown in FIG. 10.
  • the one dimensional nanostructures 30 are exposed to the environment.
  • a second exemplary environmental sensor embodiment is shown in FIG. 26 and comprises a sensing layer 52 overlying the dielectric layer 14 and the channels 20.
  • the sensing layer may comprise a polymer or optical material for sensing gasses or radiation, for example. The gasses would be absorbed by the polymer and may be attached to the one dimensional nanostructures 30.
  • an electrical representation of the spiral coil 22 used as a sensor comprises a capacitor 54, resistor 56, and inductor 58.
  • the resistance and capacitance of the substrate are represented by resistors 62 and capacitors 64.
  • the dielectric constant of the one dimensional nanostructures 30 changes, which changes the value of the resistor 56.
  • the dielectric constant of the sensing layer 52 changes, which changes the value of the inductor 58. This results, in both the first and second sensor embodiments, in a shift in the resonant frequency of the inductor.
  • the sensitivity of the frequency shift may be adjusted by varying the distance between the channels 20, the thickness of the one dimensional nanostructures 30 bundles, or the number of channels 20.
  • a polymer layer 66 is formed on the substrate 12. The gas molecules would then be absorbed by the sensing layer 52 and also the polymer layer 66. This results in the electrical equivalent circuit shown in FIG. 27.
  • Capacitor 54 represents the mutual capacitance between the inductor coils, the value of which changes with dielectric constant changes in the polymer layer 66. Molecules absorbed into the polymer layer changes the dielectric constant thereof and therefore, the capacitance between the coils.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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Abstract

Procédé de fabrication d’un élément inductif comprenant les étapes consistant à appliquer un matériau catalytique (14) sur un substrat (12) ; et à former un réseau de nanostructures unidimensionnelles (30) sur le matériau catalytique, le réseau réalisant une inductance lorsqu’une tension est appliquée à ses bornes. Cet élément inductif est décrit dans le cadre de trois applications : il peut être utilisé comme élément inductif réalisé sur une puce pour des circuits électroniques, comme détecteur magnétique, et comme détecteur de conditions ambiantes. Plusieurs modes de réalisation de l’invention concernent la formation de réseaux de nanostructures sur ou au-dessus du substrat pour réaliser une inductance à grand Q sur une puce de taille réduite pour des circuits RF. Plusieurs modes de réalisation de l’invention concernent l’application des nanostructures à la détection, notamment, de gaz, de rayonnements et de champs magnétiques.
PCT/US2006/060936 2005-12-06 2006-11-15 Elements inductifs en spirale a nanostructures unidimensionnelles WO2007067838A2 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014006594A2 (fr) * 2012-07-06 2014-01-09 Pier Rubesa Procédé et appareil d'amplification de charges électriques dans des systèmes biologiques ou des matières bioactives à l'aide d'un disque inductif à trace géométrique fixe

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CN102881651B (zh) * 2012-10-25 2015-10-28 天津理工大学 一种改善碳纳米管互连电特性的方法
CN106556626B (zh) * 2015-01-22 2019-04-26 江西师范大学 基于纳米材料的传感器的形成方法

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Publication number Priority date Publication date Assignee Title
US20040112964A1 (en) * 2002-09-30 2004-06-17 Nanosys, Inc. Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040112964A1 (en) * 2002-09-30 2004-06-17 Nanosys, Inc. Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014006594A2 (fr) * 2012-07-06 2014-01-09 Pier Rubesa Procédé et appareil d'amplification de charges électriques dans des systèmes biologiques ou des matières bioactives à l'aide d'un disque inductif à trace géométrique fixe
WO2014006594A3 (fr) * 2012-07-06 2014-10-30 Pier Rubesa Procédé et appareil d'amplification de charges électriques dans des systèmes biologiques ou des matières bioactives à l'aide d'un disque inductif à trace géométrique fixe

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