WO2007057580A8 - Laser solides dopes nd3+ pompes electriquement - Google Patents
Laser solides dopes nd3+ pompes electriquementInfo
- Publication number
- WO2007057580A8 WO2007057580A8 PCT/FR2006/002558 FR2006002558W WO2007057580A8 WO 2007057580 A8 WO2007057580 A8 WO 2007057580A8 FR 2006002558 W FR2006002558 W FR 2006002558W WO 2007057580 A8 WO2007057580 A8 WO 2007057580A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solid lasers
- doped
- electrically pumped
- active medium
- laser
- Prior art date
Links
- 239000007787 solid Substances 0.000 title abstract 2
- 230000003321 amplification Effects 0.000 abstract 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 2
- -1 rare earth ions Chemical class 0.000 abstract 2
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1628—Solid materials characterised by a semiconducting matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/169—Nanoparticles, e.g. doped nanoparticles acting as a gain material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/17—Solid materials amorphous, e.g. glass
- H01S3/176—Solid materials amorphous, e.g. glass silica or silicate glass
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Abstract
L'invention se rapporte au domaine des lasers solides et concerne, plus particulièrement, les cavités laser dopées aux ions Terres Rares. L'invention concerne une structure d'amplification laser, un laser un procédé de fabrication associé et une utilisation de cette structure. La structure d'amplification est excitable électriquement et comprend un milieu actif et au moins deux électrodes disposées de part et d'autre dudit milieu actif, ledit milieu actif comprenant une première couche d'un oxyde de silicium est co-dopée en nanograins de silicium et en ions Terres Rares.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06831149A EP1952492A2 (fr) | 2005-11-21 | 2006-11-21 | Laser solides dopes nd3+ pompes electriquement |
US12/094,414 US20100034232A1 (en) | 2005-11-21 | 2006-11-21 | Electrically pumped nd3+ doped solid laser |
JP2008540659A JP2009516911A (ja) | 2005-11-21 | 2006-11-21 | 電気ポンピングされたnd3+ドープ型固体レーザー |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73850005P | 2005-11-21 | 2005-11-21 | |
US60/738,500 | 2005-11-21 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2007057580A2 WO2007057580A2 (fr) | 2007-05-24 |
WO2007057580A3 WO2007057580A3 (fr) | 2007-07-12 |
WO2007057580A8 true WO2007057580A8 (fr) | 2008-07-10 |
Family
ID=37965262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2006/002558 WO2007057580A2 (fr) | 2005-11-21 | 2006-11-21 | Laser solides dopes nd3+ pompes electriquement |
Country Status (4)
Country | Link |
---|---|
US (1) | US20100034232A1 (fr) |
EP (1) | EP1952492A2 (fr) |
JP (1) | JP2009516911A (fr) |
WO (1) | WO2007057580A2 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101486422B1 (ko) * | 2008-05-16 | 2015-01-27 | 삼성전자주식회사 | 광증폭매체, 광증폭매체의 제조방법 및 광증폭매체를 포함하는 광학소자 |
US9793676B1 (en) | 2016-11-07 | 2017-10-17 | Dicon Fiberoptics, Inc. | Solid-state optical amplifier having an active core and doped cladding in a single chip |
JP2019164260A (ja) * | 2018-03-20 | 2019-09-26 | 住友大阪セメント株式会社 | 光変調器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11506270A (ja) * | 1995-07-28 | 1999-06-02 | ナウチニイ ツェントル ボロコンノイ オプチキ プリ インスティテュト オブスチェイ フィジキ ロシイスコイ アカデミイ ナウク | ラマンファイバーレーザー、ブラッグファイバー格子及びケイ酸ゲルマニウムガラスの屈折率変更方法 |
KR100442062B1 (ko) * | 2002-01-29 | 2004-07-30 | 주식회사 럭스퍼트 | 광소자용 박막, 이를 이용한 광방출구조체 및 그 제조방법 |
US7095058B2 (en) * | 2003-03-21 | 2006-08-22 | Intel Corporation | System and method for an improved light-emitting device |
JP4336133B2 (ja) * | 2003-03-27 | 2009-09-30 | 学校法人東海大学 | ナノシリコン発光素子の製造法 |
US7440180B2 (en) * | 2004-02-13 | 2008-10-21 | Tang Yin S | Integration of rare-earth doped amplifiers into semiconductor structures and uses of same |
JP2007535806A (ja) * | 2004-04-30 | 2007-12-06 | ニューサウス・イノヴェイションズ・ピーティーワイ・リミテッド | 人工アモルファス半導体および太陽電池への適用 |
-
2006
- 2006-11-21 WO PCT/FR2006/002558 patent/WO2007057580A2/fr active Application Filing
- 2006-11-21 US US12/094,414 patent/US20100034232A1/en not_active Abandoned
- 2006-11-21 JP JP2008540659A patent/JP2009516911A/ja active Pending
- 2006-11-21 EP EP06831149A patent/EP1952492A2/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US20100034232A1 (en) | 2010-02-11 |
JP2009516911A (ja) | 2009-04-23 |
WO2007057580A3 (fr) | 2007-07-12 |
EP1952492A2 (fr) | 2008-08-06 |
WO2007057580A2 (fr) | 2007-05-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2005079395A3 (fr) | Integration d'amplificateurs dopes aux terres rares a des structures de semi-conducteurs, et leurs utilisations | |
WO2005006504A3 (fr) | Systeme d'amplification d'impulsion comprimee de fibre de forte puissance faisant appel a des composants de type telecom | |
JP2008028379A (ja) | モードロックレーザ装置 | |
Sobon et al. | Erbium–ytterbium co-doped fiber amplifier operating at 1550 nm with stimulated lasing at 1064 nm | |
HK1071966A1 (en) | Methods and arrangements in a pumped fiber amplifier | |
WO2004049523B1 (fr) | Pompage optique hors pointe d'orthovanadate d'yttrium | |
EP2415722A3 (fr) | Élargissement de largeur de bande d'émission d'ions à terres rares dans les verres laser à base de phosphate | |
WO2007048108A3 (fr) | Amplificateurs et lasers a guide d'ondes dope a l'erbium et a pompage mecanique | |
WO2007057580A3 (fr) | Laser solides dopes nd3+ pompes electriquement | |
WO2009120584A3 (fr) | Laser à milieu de gain hautement efficace | |
Zheng et al. | Low repetition rate broadband high energy and peak power nanosecond pulsed Yb-doped fiber amplifier | |
CN105140775A (zh) | 一种1.2μm波长全固态拉曼激光器 | |
WO2010080649A3 (fr) | Protection contre l'endommagement par les particules pour miroirs de laser co2 à plaques de forte puissance | |
Meng et al. | 670 kW nanosecond all-fiber super-irradiation pulsed amplifiers at high repetition rates | |
CN211045970U (zh) | 光纤激光器 | |
CN107749563B (zh) | 基于随机光栅的单片集成半导体随机激光器 | |
CN210296860U (zh) | 光纤激光器 | |
WO2003003530A3 (fr) | Appareil laser et procede de fabrication de cet appareil | |
CN112952538A (zh) | 光纤激光器 | |
TW200505120A (en) | Single transverse mode vertical cavity surface emitting laser device with array structure and method for fabricating the same | |
WO2013019300A3 (fr) | Conception de laser | |
JP2016520262A (ja) | 光学繊維を用いた光増幅器 | |
Dubinskii et al. | Scalable, Single-Frequency, Er-only Doped Fiber Amplifier Cladding-Pumped by Multimode 980-nm Laser Diodes | |
CN216436387U (zh) | 一种用于掺铒光纤激光器的低噪声泵浦光源 | |
You et al. | Optimal design of a high-power picosecond laser system using a dual-stage ytterbium-doped fibre amplifier |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2008540659 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006831149 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWP | Wipo information: published in national office |
Ref document number: 2006831149 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12094414 Country of ref document: US |