WO2007054377A1 - Method for drying a surface - Google Patents

Method for drying a surface Download PDF

Info

Publication number
WO2007054377A1
WO2007054377A1 PCT/EP2006/061522 EP2006061522W WO2007054377A1 WO 2007054377 A1 WO2007054377 A1 WO 2007054377A1 EP 2006061522 W EP2006061522 W EP 2006061522W WO 2007054377 A1 WO2007054377 A1 WO 2007054377A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
rinsing liquid
liquid
substance
disc
Prior art date
Application number
PCT/EP2006/061522
Other languages
French (fr)
Inventor
Kei Kinoshita
Philipp Engesser
Original Assignee
Sez Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sez Ag filed Critical Sez Ag
Priority to CN2006800164880A priority Critical patent/CN101175579B/en
Priority to JP2008510527A priority patent/JP2008540994A/en
Priority to US11/914,315 priority patent/US8038804B2/en
Priority to KR1020077026378A priority patent/KR101223198B1/en
Priority to EP06841249A priority patent/EP1888263A1/en
Publication of WO2007054377A1 publication Critical patent/WO2007054377A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Definitions

  • the invention relates to a method for drying a surface. More specifically the invention relates to a method for drying a surface of a disc-shaped article comprising covering said surface with a rinsing liquid and displacing said rinsing liquid.
  • Methods for drying a surface of a disc-shaped article are typically used in semiconductor industry for cleaning silicon wafer during production processes (e.g. pre photo clean, post CMP-cleaning, and post plasma cleaning). However, such a drying method may be applied for other plate-like articles such as compact discs, photo masks, reticles, magnetic discs or flat panel displays. When used in semiconductor industry it may also be applied for glass substrates (e.g. in silicon-on-insulator processes), IH-V substrates (e.g. GaAs) or any other substrates or carriers used for producing integrated circuits.
  • glass substrates e.g. in silicon-on-insulator processes
  • IH-V substrates e.g. GaAs
  • drying methods are known in semiconductor industry. Many drying methods use a defined liquid/gas boundary layer. Such drying methods are better known as Marangoni drying methods.
  • US5,882,433 discloses a combined Marangoni spin drying method. Thereby deionised water is dispensed onto a wafer and simultaneously a mixture of nitrogen with 2-propanol is dispense.
  • the 2-propanol in the nitrogen shall influence the liquid/ gas boundary layer in that a surface gradient shall occur, which leads to the effect that the water runs of the wafer without leaving any droplets on the wafer (Marangoni Effect).
  • the gas dispenser directly follows the liquid dispenser while the liquid dispenser is moved from the centre to the edge of the wafer and while the wafer is spun and thereby gas directly displaces the liquid from the wafer.
  • This drying method is however very difficult to control.
  • the distance of the liquid to the gas dispenser, temperature, gas flow, liquid flow are critical parameters.
  • the process window is very narrow especially for disc-shaped articles of larger diameter such as 300mm semiconductor wafers and flat panel displays as well as for semiconductor wafers, which have higher integration e.g. 90nm 65nm device sizes.
  • Another disadvantage of the currently used method is that an organic and therefore flammable solvent vapour has to be mixed with a highly purified carrier gas. This leads on the one hand to fire hazardous situations and on the other hand to a drying gas with a much lower purity than could be achieved.
  • Another object of the invention is to avoid impurities in a highly purified gas.
  • the invention meets the objects of the invention by providing a method for drying a surface of a disc-shaped article comprising covering said surface with a rinsing liquid, whereby a closed liquid layer is formed, and removing said rinsing liquid, wherein said rinsing liquid containing at least 50wt.% water and at least 5wt.% of a substance, wherein the substance lowers the surface energy of water, wherein said removing of the liquid is initiated by blowing gas onto said closed liquid layer, whereby the closed liquid layer is opened at a discrete area.
  • Such a substance can be called a surface active substance.
  • a surface active substance must be a substance capable of lowering the surface energy (surface tension) of water. This does not necessarily mean that it has to be a tenside or surfactant such as soap. It only shall mean that it shall comprise a molecule, which has a polar and an apolar end.
  • the rinsing liquid should contain only water and the substance.
  • any other aqueous solution may be used as long as it fulfils the above-mentioned criteria.
  • This drying method is capable not only to dry hydrophilic surfaces of semiconductor wafers but also hydrophobic surfaces and also structured surfaces having hydrophilic as well as hydrophobic areas.
  • the rinsing liquid forms a liquid film (liquid meniscus) on the surface, which can not be easily removed.
  • the blowing of a gas onto said liquid film partly opens the liquid layer.
  • the specific surface energy of the mixture comprising water and the substance the rinsing liquid automatically flows off the surface with only little additional support (e.g. gravity, centrifugal force, air flow, capillary force).
  • additional support e.g. gravity, centrifugal force, air flow, capillary force
  • the substance is a dipolar organic solvent (e.g. selected from a group comprising, alcohols (e.g. ethanol, 2-propanol), ketones (e.g. acetone), and mixtures thereof).
  • a dipolar organic solvent e.g. selected from a group comprising, alcohols (e.g. ethanol, 2-propanol), ketones (e.g. acetone), and mixtures thereof).
  • the dipolar organic solvent which has a vapour pressure at 20°C of above 15hPa, is used because it easily vaporizes if residues adhere on the surface. Therefore 2-propanol is preferred because it serves as a surface active substance and at the same time easily vaporizes if residues adhere on the surface.
  • the gas comprises an inert gas selected from the group of noble gases, carbon dioxide and nitrogen. This is because this further limits the fire risk and covers the surface with inert atmosphere, which avoids the formation of watermarks.
  • the gas substantially is free from any surface active substances (such as 2-propanol).
  • Said closed liquid layer being formed on the surface might be covered by a plate whereby a gap is formed by said plate and the disc-shaped article and thereby holding the liquid layer in the gap.
  • the liquid is directly displaced by the gas blown to the liquid layer.
  • the gas flow has to be precisely controlled so that the liquid is not accelerated to much so that droplets my be generated. Therefore it is helpful if the liquid layer is exposed to gas (e.g. the liquid layer is exposed to atmosphere).
  • the surface is rinsed with a first rinsing liquid before said rinsing liquid is applied to the surface, wherein said first rinsing liquid is substantially free from any surface active substances. This helps to rinse of any previously applied liquids without the use of the additional substance.
  • said rinsing liquid contains at least 10wt.% of the substance (preferably at least 15wt.% of the substance.)
  • the gas is blown to the surface in form of a merely punctiform supply of the gas, which means that the cross sectional area of the nozzle's mouth which supplies the gas shall not be more than 1 cm 2 (preferably not more than 0.2cm 2 ).
  • the gas velocity shall be more than 3 m/s preferably 10 m/s because a minimum mechanical agitation is helpful in order to open the liquid layer covering the surface.
  • said gas is blown onto the surface with a nozzle, which is directed to an area of impact on the surface, the centre of which is not more than 30mm off-set the centre of the disc-shaped article.
  • the efficiency of the drying method can be further enhanced if said disc-shaped article is rotated about an axis substantially perpendicular to said surface of the disc- shaped article during at least part of the time of displacing of the rinsing liquid.
  • a structured semiconductor wafer (300mm diameter) is placed on a spin chuck and securely held by eccentrically movable pins.
  • Several different aqueous cleaning liquids e.g. SCl, SC2
  • SCl, SC2 aqueous cleaning liquids
  • the last cleaning liquid e.g. diluted hydrofluoric acid (DHF)
  • DI- water is directly displaced by dispensing DI- water onto the wafer at a flow of 21/min for 30 s. While dispensing DI- water the wafer spins at about 150 rpm.
  • DHF as the last cleaning liquid leads to a hydrophobic or a partly hydrophobic surface.
  • the nozzle which blows the nitrogen, has an orifice diameter of
  • Fig. 1 to Fig.4 show the above-described example.
  • Fig. 1 the rinsing liquid is dispensed onto a rotating wafer W through liquid dispenser 1.
  • Gas dispenser 2 is in waiting position. Rinsing liquid fully covers the wafer and thereby forms the liquid layer L.
  • the wafer is held up-side-down on a spin chuck, which means that liquids and gas are supplied to the wafer from below.
  • both sides of the wafer can be dried simultaneously by using the same method e.g. with a spin chuck as disclosed in US6,536,454B2.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Detergent Compositions (AREA)

Abstract

Disclosed is a method for drying a surface of a disc-shaped article comprising covering said surface with a rinsing liquid, whereby a closed liquid layer (L) is formed, and removing said rinsing liquid, wherein said rinsing liquid containing at least 50wt.% water and at least 5wt.% of a substance, wherein the substance lowers the surface energy of water, wherein said removing of the liquid is initiated by blowing gas onto said closed liquid layer, whereby the closed liquid layer is opened at on discrete area (A) .

Description

METHOD FOR DRYING A SURFACE
[001] The invention relates to a method for drying a surface. More specifically the invention relates to a method for drying a surface of a disc-shaped article comprising covering said surface with a rinsing liquid and displacing said rinsing liquid.
[002] Methods for drying a surface of a disc-shaped article are typically used in semiconductor industry for cleaning silicon wafer during production processes (e.g. pre photo clean, post CMP-cleaning, and post plasma cleaning). However, such a drying method may be applied for other plate-like articles such as compact discs, photo masks, reticles, magnetic discs or flat panel displays. When used in semiconductor industry it may also be applied for glass substrates (e.g. in silicon-on-insulator processes), IH-V substrates (e.g. GaAs) or any other substrates or carriers used for producing integrated circuits.
[003] Several drying methods are known in semiconductor industry. Many drying methods use a defined liquid/gas boundary layer. Such drying methods are better known as Marangoni drying methods.
[004] US5,882,433 discloses a combined Marangoni spin drying method. Thereby deionised water is dispensed onto a wafer and simultaneously a mixture of nitrogen with 2-propanol is dispense. The 2-propanol in the nitrogen shall influence the liquid/ gas boundary layer in that a surface gradient shall occur, which leads to the effect that the water runs of the wafer without leaving any droplets on the wafer (Marangoni Effect). The gas dispenser directly follows the liquid dispenser while the liquid dispenser is moved from the centre to the edge of the wafer and while the wafer is spun and thereby gas directly displaces the liquid from the wafer.
[005] This drying method is however very difficult to control. E.g. the distance of the liquid to the gas dispenser, temperature, gas flow, liquid flow are critical parameters. Thus the process window is very narrow especially for disc-shaped articles of larger diameter such as 300mm semiconductor wafers and flat panel displays as well as for semiconductor wafers, which have higher integration e.g. 90nm 65nm device sizes.
[006] Another disadvantage of the currently used method is that an organic and therefore flammable solvent vapour has to be mixed with a highly purified carrier gas. This leads on the one hand to fire hazardous situations and on the other hand to a drying gas with a much lower purity than could be achieved.
[007] Furthermore the solvent vapour my condense in the gas piping, which may lead to droplets on the surface of the substrate to be dried, which further leads to bad process results specifically if the substrate is a highly integrated structured semiconductor wafer. [008] Therefore it is an object of the invention to provide a method with a better process result, which can be achieved with higher process ability.
[009] Another object of the invention is to avoid impurities in a highly purified gas.
[010] The invention meets the objects of the invention by providing a method for drying a surface of a disc-shaped article comprising covering said surface with a rinsing liquid, whereby a closed liquid layer is formed, and removing said rinsing liquid, wherein said rinsing liquid containing at least 50wt.% water and at least 5wt.% of a substance, wherein the substance lowers the surface energy of water, wherein said removing of the liquid is initiated by blowing gas onto said closed liquid layer, whereby the closed liquid layer is opened at a discrete area.
[011] Such a substance can be called a surface active substance. However, per definition herein a surface active substance must be a substance capable of lowering the surface energy (surface tension) of water. This does not necessarily mean that it has to be a tenside or surfactant such as soap. It only shall mean that it shall comprise a molecule, which has a polar and an apolar end.
[012] Because of environmental as well as cost reasons, the rinsing liquid should contain only water and the substance. However, any other aqueous solution may be used as long as it fulfils the above-mentioned criteria.
[013] The use of at least 50wt.% of water leads to the positive effect that the mixture has a flashpoint of above room temperature (250C) even when the remaining 50wt.% are organic solvents. If 2-propanol or acetone is used the water content should be above 75% in order to raise the flashpoint above 20°C.
[014] Surprisingly by using such an inventive drying method the rinsing liquid could be removed in one process step without leaving any droplets on the disc-shaped article.
[015] This drying method is capable not only to dry hydrophilic surfaces of semiconductor wafers but also hydrophobic surfaces and also structured surfaces having hydrophilic as well as hydrophobic areas.
[016] Without being bound to any theory it is believed that the rinsing liquid forms a liquid film (liquid meniscus) on the surface, which can not be easily removed. The blowing of a gas onto said liquid film partly opens the liquid layer. Then because of the specific surface energy of the mixture comprising water and the substance the rinsing liquid automatically flows off the surface with only little additional support (e.g. gravity, centrifugal force, air flow, capillary force). However, it might be helpful to further blow gas onto the surface in order to keep the surface free from liquid.
[017] In a preferred embodiment of the invention the substance is a dipolar organic solvent (e.g. selected from a group comprising, alcohols (e.g. ethanol, 2-propanol), ketones (e.g. acetone), and mixtures thereof).
[018] Advantageously the dipolar organic solvent, which has a vapour pressure at 20°C of above 15hPa, is used because it easily vaporizes if residues adhere on the surface. Therefore 2-propanol is preferred because it serves as a surface active substance and at the same time easily vaporizes if residues adhere on the surface.
[019] Although any gas might be used (e.g. clean air) advantageously the gas comprises an inert gas selected from the group of noble gases, carbon dioxide and nitrogen. This is because this further limits the fire risk and covers the surface with inert atmosphere, which avoids the formation of watermarks.
[020] Merely because of avoiding fire hazardousness but also in order to minimize costs the gas substantially is free from any surface active substances (such as 2-propanol).
[021] Said closed liquid layer being formed on the surface might be covered by a plate whereby a gap is formed by said plate and the disc-shaped article and thereby holding the liquid layer in the gap. In this case the liquid is directly displaced by the gas blown to the liquid layer. In this case the gas flow has to be precisely controlled so that the liquid is not accelerated to much so that droplets my be generated. Therefore it is helpful if the liquid layer is exposed to gas (e.g. the liquid layer is exposed to atmosphere).
[022] In a preferred embodiment the surface is rinsed with a first rinsing liquid before said rinsing liquid is applied to the surface, wherein said first rinsing liquid is substantially free from any surface active substances. This helps to rinse of any previously applied liquids without the use of the additional substance.
[023] In yet another embodiment said rinsing liquid contains at least 10wt.% of the substance (preferably at least 15wt.% of the substance.)
[024] Advantageously the gas is blown to the surface in form of a merely punctiform supply of the gas, which means that the cross sectional area of the nozzle's mouth which supplies the gas shall not be more than 1 cm2 (preferably not more than 0.2cm2).
[025] The gas velocity shall be more than 3 m/s preferably 10 m/s because a minimum mechanical agitation is helpful in order to open the liquid layer covering the surface.
[026] In an embodiment said gas is blown onto the surface with a nozzle, which is directed to an area of impact on the surface, the centre of which is not more than 30mm off-set the centre of the disc-shaped article.
[027] The efficiency of the drying method can be further enhanced if said disc-shaped article is rotated about an axis substantially perpendicular to said surface of the disc- shaped article during at least part of the time of displacing of the rinsing liquid.
[028] Further details of the invention will become apparent by the following detailed examples.
[029] A structured semiconductor wafer (300mm diameter) is placed on a spin chuck and securely held by eccentrically movable pins. Several different aqueous cleaning liquids (e.g. SCl, SC2) are subsequently dispensed onto the wafer surface not facing the chuck. The last cleaning liquid (e.g. diluted hydrofluoric acid (DHF)) is directly displaced by dispensing DI- water onto the wafer at a flow of 21/min for 30 s. While dispensing DI- water the wafer spins at about 150 rpm. DHF as the last cleaning liquid leads to a hydrophobic or a partly hydrophobic surface.
[030] Without interrupting the dispensing of the DI-water 2-propanol is added to the DI- water stream thereby forming a mixture of 75wt.% water and 25wt.%. Simultaneously spin speed is decelerated to 50 rpm. The mixture is dispensed onto the centre of the wafer for 5 s. Immediately thereafter spin speed is decelerated to 30 rpm and nitrogen is blown to the centre of the wafer out of a nozzle having an orifice diameter of 5 mm (0.2 cm2 cross sectional area) at a flow of 201/min (gas velocity 17 m/s).
[031] Thereby the liquid film of the rinsing liquid opens and the rinsing liquid smoothly flows off the wafer, softly supported by the slow spinning of the wafer. This leads to a sudden dry wafer.
[032] In order to get rid of any rinsing liquid residues, which might have remained on the spin chuck or the bevel of the wafer the spin speed is accelerated again to 1300 rpm and all residues (droplets on the spin chuck and/or the bevel of the wafer) are spun off.
[033] In an other example the nozzle, which blows the nitrogen, has an orifice diameter of
1.5 mm (1.8 mm2 cross sectional area) and a flow of 51/min (gas velocity 47 m/s) is used.
[034] Fig. 1 to Fig.4 show the above-described example.
[035] In Fig. 1 the rinsing liquid is dispensed onto a rotating wafer W through liquid dispenser 1. Gas dispenser 2 is in waiting position. Rinsing liquid fully covers the wafer and thereby forms the liquid layer L.
[036] In Fig.2 gas is blown through gas dispenser 2 and thereby opens the liquid layer in one small centric area A. Liquid dispensing has stopped in the meantime and liquid dispenser 1 has been put into standby position.
[037] In Fig. 3 situation after about a time of 10 s is shown. The dried area has automatically become bigger. Gas is still dispensed (however not necessary).
[038] In Fig.4 the wafer surface is now totally dried.
[039] In an alternative example the wafer is held up-side-down on a spin chuck, which means that liquids and gas are supplied to the wafer from below. Alternatively both sides of the wafer can be dried simultaneously by using the same method e.g. with a spin chuck as disclosed in US6,536,454B2.

Claims

Claims
[001] Method for drying a surface of a disc-shaped article comprising covering said surface with a rinsing liquid, whereby a closed liquid layer is formed, and removing said rinsing liquid, wherein said rinsing liquid containing at least
50wt.% water and at least 5wt.% of a substance, wherein the substance lowers the surface energy of water, wherein said removing of the liquid is initiated by blowing gas onto said closed liquid layer, whereby the closed liquid layer is opened at a discrete area. [002] Method according to claim 1 wherein the substance is a dipolar organic solvent
(e.g. selected from a group comprising, alcohols (e.g. ethanol, 2-propanol), ketones (e.g. acetone), and mixtures thereof). [003] Method according to claim 2 wherein the dipolar organic solvent has a vapour pressure at 200C of above 15hPa. [004] Method according to claim 1 wherein the gas comprises an inert gas selected from the group of noble gases, carbon dioxide, and nitrogen. [005] Method according to claim 1 wherein the gas substantially is free from any surface active substances. [006] Method according to claim 1 wherein said closed liquid layer being formed on the surface is exposed to gas. [007] Method according to claim 1 wherein said surface has been rinsed with a first rinsing liquid before said rinsing liquid is applied to the surface, wherein said first rinsing liquid is substantially free from any surface active substances. [008] Method according to claim 1 wherein said rinsing liquid contains at least 10wt.% of a substance. [009] Method according to claim 7 wherein said rinsing liquid contains at least 15wt.% of a substance. [010] Method according to claim 1 wherein the gas is blown to the surface through a nozzle, with a cross sectional area of the nozzle's mouth shall be not more than 1 cm2. [011] Method according to claim 9 wherein said gas is blown onto the surface with a nozzle which is directed to an area of impact of the surface not more than 30mm set off the centre of the disc-shaped article. [012] Method according to claim 1 wherein the gas velocity of said gas blown to the surface shall be more than 3 m/s. [013] Method according to claim 1 wherein said disc-shaped article is rotated about an axis substantially perpendicular to said surface of the disc-shaped article during at least part of the time of displacing of the rinsing liquid.
PCT/EP2006/061522 2005-05-13 2006-04-11 Method for drying a surface WO2007054377A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2006800164880A CN101175579B (en) 2005-05-13 2006-04-11 Method for drying a surface
JP2008510527A JP2008540994A (en) 2005-05-13 2006-04-11 Surface drying method
US11/914,315 US8038804B2 (en) 2005-05-13 2006-04-11 Method for drying a surface
KR1020077026378A KR101223198B1 (en) 2005-05-13 2006-04-11 Method for drying a surface
EP06841249A EP1888263A1 (en) 2005-05-13 2006-04-11 Method for drying a surface

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT8312005 2005-05-13
ATA831/2005 2005-05-13

Publications (1)

Publication Number Publication Date
WO2007054377A1 true WO2007054377A1 (en) 2007-05-18

Family

ID=37890725

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/061522 WO2007054377A1 (en) 2005-05-13 2006-04-11 Method for drying a surface

Country Status (7)

Country Link
US (1) US8038804B2 (en)
EP (1) EP1888263A1 (en)
JP (1) JP2008540994A (en)
KR (1) KR101223198B1 (en)
CN (1) CN101175579B (en)
TW (1) TWI364524B (en)
WO (1) WO2007054377A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090071940A1 (en) * 2007-09-13 2009-03-19 Sokudo Co., Ltd. Multi-speed substrate processing apparatus and substrate processing method

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5390873B2 (en) * 2009-01-28 2014-01-15 大日本スクリーン製造株式会社 Substrate processing method and substrate processing apparatus
JP5538102B2 (en) * 2010-07-07 2014-07-02 株式会社Ｓｏｋｕｄｏ Substrate cleaning method and substrate cleaning apparatus
JP5615650B2 (en) 2010-09-28 2014-10-29 大日本スクリーン製造株式会社 Substrate processing method and substrate processing apparatus
CN108176640A (en) * 2017-11-17 2018-06-19 天津津航技术物理研究所 A kind of drying means for improving laser gyro cavity cleaning degree

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5271774A (en) * 1990-03-01 1993-12-21 U.S. Philips Corporation Method for removing in a centrifuge a liquid from a surface of a substrate
US5882433A (en) * 1995-05-23 1999-03-16 Tokyo Electron Limited Spin cleaning method
WO2002054456A2 (en) * 2001-01-04 2002-07-11 Applied Materials, Inc. A rinsing solution and rinsing and drying methods for the prevention of watermark formation on a surface
WO2005015627A1 (en) * 2003-08-07 2005-02-17 Ebara Corporation Substrate processing apparatus, substrate processing method, and substrate holding apparatus

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8900480A (en) * 1989-02-27 1990-09-17 Philips Nv METHOD AND APPARATUS FOR DRYING SUBSTRATES AFTER TREATMENT IN A LIQUID
JPH05326392A (en) * 1992-05-14 1993-12-10 Fujitsu Ltd Manufacture of semiconductor device
JP3402932B2 (en) * 1995-05-23 2003-05-06 東京エレクトロン株式会社 Cleaning method and apparatus
JPH1041267A (en) * 1996-07-19 1998-02-13 Kaijo Corp Substrate cleaning and drying apparatus
TW357406B (en) * 1996-10-07 1999-05-01 Tokyo Electron Ltd Method and apparatus for cleaning and drying a substrate
US6729040B2 (en) * 1999-05-27 2004-05-04 Oliver Design, Inc. Apparatus and method for drying a substrate using hydrophobic and polar organic compounds
US7021319B2 (en) * 2000-06-26 2006-04-04 Applied Materials Inc. Assisted rinsing in a single wafer cleaning process
CN2460229Y (en) * 2001-01-16 2001-11-21 集贤实业有限公司 Dry gasification device
TW200303581A (en) * 2002-02-28 2003-09-01 Tech Ltd A Method and apparatus for cleaning and drying semiconductor wafer
TW556255B (en) 2002-06-04 2003-10-01 Semiconductor Mfg Int Shanghai Drying method of post-cleaned semiconductor wafer
JP4030832B2 (en) * 2002-08-20 2008-01-09 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
TWI236061B (en) 2003-08-21 2005-07-11 Grand Plastic Technology Corp Method for wafer drying
JP4324527B2 (en) * 2004-09-09 2009-09-02 東京エレクトロン株式会社 Substrate cleaning method and developing apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5271774A (en) * 1990-03-01 1993-12-21 U.S. Philips Corporation Method for removing in a centrifuge a liquid from a surface of a substrate
US5882433A (en) * 1995-05-23 1999-03-16 Tokyo Electron Limited Spin cleaning method
WO2002054456A2 (en) * 2001-01-04 2002-07-11 Applied Materials, Inc. A rinsing solution and rinsing and drying methods for the prevention of watermark formation on a surface
WO2005015627A1 (en) * 2003-08-07 2005-02-17 Ebara Corporation Substrate processing apparatus, substrate processing method, and substrate holding apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090071940A1 (en) * 2007-09-13 2009-03-19 Sokudo Co., Ltd. Multi-speed substrate processing apparatus and substrate processing method
US10134610B2 (en) * 2007-09-13 2018-11-20 Screen Semiconductor Solutions Co., Ltd. Substrate processing method for drying a substrate by discharging gas to liquid layer on the substrate while rotating the substrate

Also Published As

Publication number Publication date
EP1888263A1 (en) 2008-02-20
US8038804B2 (en) 2011-10-18
TWI364524B (en) 2012-05-21
CN101175579B (en) 2012-06-27
CN101175579A (en) 2008-05-07
JP2008540994A (en) 2008-11-20
TW200639361A (en) 2006-11-16
KR101223198B1 (en) 2013-01-17
US20080190455A1 (en) 2008-08-14
KR20080005553A (en) 2008-01-14

Similar Documents

Publication Publication Date Title
TWI698906B (en) Substrate processing method and substrate processing apparatus
US20030192570A1 (en) Method and apparatus for wafer cleaning
JP5676658B2 (en) Liquid aerosol particle removal method
US8334222B2 (en) Semiconductor wafer processing method and apparatus
US20030192577A1 (en) Method and apparatus for wafer cleaning
KR102101562B1 (en) Substrate processing method and substrate processing appratus
US7364625B2 (en) Rinsing processes and equipment
CN107799438B (en) Substrate processing apparatus and nozzle cleaning method
US20130014785A1 (en) Substrate processing method and substrate processing apparatus
JPH11340184A (en) Manufacture of semiconductor device
US8038804B2 (en) Method for drying a surface
JPH1116866A (en) Method and equipment for cleaning silicon
US20120085372A1 (en) Method for drying a semiconductor wafer
TWI744917B (en) Substrate processing method and substrate processing apparatus
JP5390873B2 (en) Substrate processing method and substrate processing apparatus
US8124320B2 (en) Method and apparatus for surface tension control in advanced photolithography
US9230794B2 (en) Process for cleaning, drying and hydrophilizing a semiconductor wafer
US11154913B2 (en) Substrate treatment method and substrate treatment device
JP6310583B2 (en) Substrate processing method and substrate processing apparatus
JP2009218376A (en) Substrate processing device and substrate processing method
JP2024078250A (en) SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2006841249

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2008510527

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 200680016488.0

Country of ref document: CN

Ref document number: 11914315

Country of ref document: US

Ref document number: 1020077026378

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Ref document number: DE

NENP Non-entry into the national phase

Ref country code: RU

WWW Wipo information: withdrawn in national office

Ref document number: RU

WWP Wipo information: published in national office

Ref document number: 2006841249

Country of ref document: EP