WO2007047451A3 - Thermoelectric device produced by quantum confinement in nanostructures, and methods therefor - Google Patents

Thermoelectric device produced by quantum confinement in nanostructures, and methods therefor Download PDF

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Publication number
WO2007047451A3
WO2007047451A3 PCT/US2006/040114 US2006040114W WO2007047451A3 WO 2007047451 A3 WO2007047451 A3 WO 2007047451A3 US 2006040114 W US2006040114 W US 2006040114W WO 2007047451 A3 WO2007047451 A3 WO 2007047451A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanostructures
thermoelectric device
device produced
quantum confinement
methods therefor
Prior art date
Application number
PCT/US2006/040114
Other languages
French (fr)
Other versions
WO2007047451A2 (en
Inventor
Biprodas Dutta
Original Assignee
Zt3 Technologies Inc
Biprodas Dutta
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/250,606 external-priority patent/US20070084499A1/en
Priority claimed from US11/250,605 external-priority patent/US20070084495A1/en
Application filed by Zt3 Technologies Inc, Biprodas Dutta filed Critical Zt3 Technologies Inc
Publication of WO2007047451A2 publication Critical patent/WO2007047451A2/en
Publication of WO2007047451A3 publication Critical patent/WO2007047451A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention provides a method for preparing a thermoelectric device (100) comprising depositing a thermoelectric film (104) on a substrate (102), locating one or more electrodes within the thermoelectric film (104), partially oxidizing the thermoelectric film (104) to form an oxide layer (106) and melting the oxide layer (106) to form an electrical insulating and protective barrier on a top surface of the thermoelectric film (104).
PCT/US2006/040114 2005-10-14 2006-10-12 Thermoelectric device produced by quantum confinement in nanostructures, and methods therefor WO2007047451A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/250,606 2005-10-14
US11/250,606 US20070084499A1 (en) 2005-10-14 2005-10-14 Thermoelectric device produced by quantum confinement in nanostructures
US11/250,605 2005-10-14
US11/250,605 US20070084495A1 (en) 2005-10-14 2005-10-14 Method for producing practical thermoelectric devices using quantum confinement in nanostructures

Publications (2)

Publication Number Publication Date
WO2007047451A2 WO2007047451A2 (en) 2007-04-26
WO2007047451A3 true WO2007047451A3 (en) 2009-04-16

Family

ID=37963115

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/040114 WO2007047451A2 (en) 2005-10-14 2006-10-12 Thermoelectric device produced by quantum confinement in nanostructures, and methods therefor

Country Status (1)

Country Link
WO (1) WO2007047451A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4963195A (en) * 1986-10-24 1990-10-16 Anritsu Corporation Electric resistor and a power detector both comprising a thin film conductor
US5491452A (en) * 1990-09-18 1996-02-13 Melcor Japan Co., Ltd. Peltier element as series noise clamp
US6100463A (en) * 1997-11-18 2000-08-08 The Boeing Company Method for making advanced thermoelectric devices
US20030121540A1 (en) * 2001-12-27 2003-07-03 Katsuhiko Onoue Thermoelectric module
US20040112418A1 (en) * 2002-12-12 2004-06-17 Jihui Yang Thermoelectric material using ZrNiSn-based half-Heusler structures

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4963195A (en) * 1986-10-24 1990-10-16 Anritsu Corporation Electric resistor and a power detector both comprising a thin film conductor
US5491452A (en) * 1990-09-18 1996-02-13 Melcor Japan Co., Ltd. Peltier element as series noise clamp
US6100463A (en) * 1997-11-18 2000-08-08 The Boeing Company Method for making advanced thermoelectric devices
US20030121540A1 (en) * 2001-12-27 2003-07-03 Katsuhiko Onoue Thermoelectric module
US20040112418A1 (en) * 2002-12-12 2004-06-17 Jihui Yang Thermoelectric material using ZrNiSn-based half-Heusler structures

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KARG ET AL.: "Photovoltaic Specialists Conference, 1993", CONFERENCE RECORD OF THE TWENTY THIRD IEEE, May 1993 (1993-05-01), pages 441 - 446 *
ROGACHEVA E.I. ET AL.: "Effect of non-stoichiometry on oxidation processes in n-type PbTe thin films", ELSEVIER, THIN SOLID FILMS, vol. 423, no. 2, 2003, pages 257 - 261, XP004404510 *

Also Published As

Publication number Publication date
WO2007047451A2 (en) 2007-04-26

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