WO2007043603A1 - Composition pour des matières conductrices - Google Patents
Composition pour des matières conductrices Download PDFInfo
- Publication number
- WO2007043603A1 WO2007043603A1 PCT/JP2006/320363 JP2006320363W WO2007043603A1 WO 2007043603 A1 WO2007043603 A1 WO 2007043603A1 JP 2006320363 W JP2006320363 W JP 2006320363W WO 2007043603 A1 WO2007043603 A1 WO 2007043603A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- composition
- conductive materials
- group
- conductive
- layer
- Prior art date
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 200
- 239000000203 mixture Substances 0.000 title claims abstract description 195
- 150000001875 compounds Chemical class 0.000 claims abstract description 341
- 125000001424 substituent group Chemical group 0.000 claims abstract description 162
- 125000000623 heterocyclic group Chemical group 0.000 claims abstract description 52
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 34
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 21
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 18
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims abstract description 12
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 9
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims abstract 12
- 230000005525 hole transport Effects 0.000 claims description 175
- -1 vinyl compound Chemical class 0.000 claims description 149
- 229920002554 vinyl polymer Polymers 0.000 claims description 103
- 239000004065 semiconductor Substances 0.000 claims description 72
- 238000006116 polymerization reaction Methods 0.000 claims description 59
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 54
- 238000006243 chemical reaction Methods 0.000 claims description 45
- 239000002202 Polyethylene glycol Substances 0.000 claims description 25
- 229920001223 polyethylene glycol Polymers 0.000 claims description 25
- 230000001105 regulatory effect Effects 0.000 claims description 25
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 21
- 238000004132 cross linking Methods 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 125000004429 atom Chemical group 0.000 claims description 10
- 125000005842 heteroatom Chemical group 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- 239000011669 selenium Substances 0.000 claims description 7
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- 125000002529 biphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C12)* 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 225
- 239000010410 layer Substances 0.000 description 407
- 229920000642 polymer Polymers 0.000 description 188
- 238000000034 method Methods 0.000 description 80
- 230000000052 comparative effect Effects 0.000 description 75
- 239000000126 substance Substances 0.000 description 59
- 239000002904 solvent Substances 0.000 description 56
- 239000000758 substrate Substances 0.000 description 48
- 230000003993 interaction Effects 0.000 description 35
- 239000000470 constituent Substances 0.000 description 33
- 239000003999 initiator Substances 0.000 description 31
- 150000004982 aromatic amines Chemical class 0.000 description 29
- 150000004945 aromatic hydrocarbons Chemical group 0.000 description 26
- 238000005259 measurement Methods 0.000 description 25
- 239000002612 dispersion medium Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 23
- 238000012663 cationic photopolymerization Methods 0.000 description 22
- 125000004386 diacrylate group Chemical group 0.000 description 18
- 230000003247 decreasing effect Effects 0.000 description 16
- 238000004090 dissolution Methods 0.000 description 16
- 238000002156 mixing Methods 0.000 description 16
- 238000002360 preparation method Methods 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 15
- 239000012535 impurity Substances 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 239000003505 polymerization initiator Substances 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 15
- 239000011521 glass Substances 0.000 description 14
- JPOVFJVXRISZEE-UHFFFAOYSA-N 4-(4-aminophenyl)butan-1-ol Chemical compound NC1=CC=C(CCCCO)C=C1 JPOVFJVXRISZEE-UHFFFAOYSA-N 0.000 description 13
- 239000000178 monomer Substances 0.000 description 13
- 239000012044 organic layer Substances 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 12
- 239000011344 liquid material Substances 0.000 description 12
- UDSJZSITOZVZLX-UHFFFAOYSA-N 2,5-bis(4-iodophenyl)thiophene Chemical compound C1=CC(I)=CC=C1C1=CC=C(C=2C=CC(I)=CC=2)S1 UDSJZSITOZVZLX-UHFFFAOYSA-N 0.000 description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 11
- 230000006870 function Effects 0.000 description 11
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 10
- 239000000969 carrier Substances 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 8
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 8
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 8
- WFDIJRYMOXRFFG-UHFFFAOYSA-N acetic acid anhydride Natural products CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 8
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 8
- WDECIBYCCFPHNR-UHFFFAOYSA-N chrysene Chemical compound C1=CC=CC2=CC=C3C4=CC=CC=C4C=CC3=C21 WDECIBYCCFPHNR-UHFFFAOYSA-N 0.000 description 8
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 8
- 229910052753 mercury Inorganic materials 0.000 description 8
- 239000011368 organic material Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000009257 reactivity Effects 0.000 description 8
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 239000004417 polycarbonate Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 description 6
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 229910017073 AlLi Inorganic materials 0.000 description 6
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 6
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical group C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 6
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 6
- 239000007810 chemical reaction solvent Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 6
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 6
- 229920000515 polycarbonate Polymers 0.000 description 6
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 239000008096 xylene Substances 0.000 description 6
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 5
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Chemical group 0.000 description 5
- 239000003957 anion exchange resin Substances 0.000 description 5
- 239000010405 anode material Substances 0.000 description 5
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000010406 cathode material Substances 0.000 description 5
- 125000002091 cationic group Chemical group 0.000 description 5
- 230000001771 impaired effect Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 239000002685 polymerization catalyst Substances 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 230000008961 swelling Effects 0.000 description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
- 238000000108 ultra-filtration Methods 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 5
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 4
- SYBYTAAJFKOIEJ-UHFFFAOYSA-N 3-Methylbutan-2-one Chemical compound CC(C)C(C)=O SYBYTAAJFKOIEJ-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 238000005481 NMR spectroscopy Methods 0.000 description 4
- 229920000265 Polyparaphenylene Polymers 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 4
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 4
- 239000007983 Tris buffer Substances 0.000 description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 125000000129 anionic group Chemical group 0.000 description 4
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 4
- 229960000956 coumarin Drugs 0.000 description 4
- 235000001671 coumarin Nutrition 0.000 description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 4
- 230000008030 elimination Effects 0.000 description 4
- 238000003379 elimination reaction Methods 0.000 description 4
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 4
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 4
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 4
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 4
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 4
- 229920001197 polyacetylene Polymers 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 4
- MFRIHAYPQRLWNB-UHFFFAOYSA-N sodium tert-butoxide Chemical compound [Na+].CC(C)(C)[O-] MFRIHAYPQRLWNB-UHFFFAOYSA-N 0.000 description 4
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 4
- 235000021286 stilbenes Nutrition 0.000 description 4
- 229930192474 thiophene Natural products 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- AXKGIPZJYUNAIW-UHFFFAOYSA-N (4-aminophenyl)methanol Chemical compound NC1=CC=C(CO)C=C1 AXKGIPZJYUNAIW-UHFFFAOYSA-N 0.000 description 3
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 3
- ZBTMRBYMKUEVEU-UHFFFAOYSA-N 1-bromo-4-methylbenzene Chemical compound CC1=CC=C(Br)C=C1 ZBTMRBYMKUEVEU-UHFFFAOYSA-N 0.000 description 3
- GPYDMVZCPRONLW-UHFFFAOYSA-N 1-iodo-4-(4-iodophenyl)benzene Chemical group C1=CC(I)=CC=C1C1=CC=C(I)C=C1 GPYDMVZCPRONLW-UHFFFAOYSA-N 0.000 description 3
- QXHDYMUPPXAMPQ-UHFFFAOYSA-N 2-(4-aminophenyl)ethanol Chemical compound NC1=CC=C(CCO)C=C1 QXHDYMUPPXAMPQ-UHFFFAOYSA-N 0.000 description 3
- OCKGFTQIICXDQW-ZEQRLZLVSA-N 5-[(1r)-1-hydroxy-2-[4-[(2r)-2-hydroxy-2-(4-methyl-1-oxo-3h-2-benzofuran-5-yl)ethyl]piperazin-1-yl]ethyl]-4-methyl-3h-2-benzofuran-1-one Chemical compound C1=C2C(=O)OCC2=C(C)C([C@@H](O)CN2CCN(CC2)C[C@H](O)C2=CC=C3C(=O)OCC3=C2C)=C1 OCKGFTQIICXDQW-ZEQRLZLVSA-N 0.000 description 3
- XHCKCHBRVJUMFY-UHFFFAOYSA-N 7-(4-aminophenyl)heptan-1-ol Chemical compound NC1=CC=C(CCCCCCCO)C=C1 XHCKCHBRVJUMFY-UHFFFAOYSA-N 0.000 description 3
- UDAZBTGNUGCSKH-UHFFFAOYSA-N 8-(4-aminophenyl)octan-1-ol Chemical compound NC1=CC=C(CCCCCCCCO)C=C1 UDAZBTGNUGCSKH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 229910015900 BF3 Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 3
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 230000001588 bifunctional effect Effects 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000003426 co-catalyst Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000004210 ether based solvent Substances 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 3
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000543 intermediate Substances 0.000 description 3
- 230000004807 localization Effects 0.000 description 3
- 238000001819 mass spectrum Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920000123 polythiophene Polymers 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical group C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 description 3
- 150000003852 triazoles Chemical class 0.000 description 3
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 2
- NGQSLSMAEVWNPU-YTEMWHBBSA-N 1,2-bis[(e)-2-phenylethenyl]benzene Chemical compound C=1C=CC=CC=1/C=C/C1=CC=CC=C1\C=C\C1=CC=CC=C1 NGQSLSMAEVWNPU-YTEMWHBBSA-N 0.000 description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 2
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- JEGXLJDYOKKUNM-UHFFFAOYSA-N 3-(2-phenylethenyl)cyclohexa-3,5-diene-1,2-dione Chemical compound O=C1C(=O)C=CC=C1C=CC1=CC=CC=C1 JEGXLJDYOKKUNM-UHFFFAOYSA-N 0.000 description 2
- DDTHMESPCBONDT-UHFFFAOYSA-N 4-(4-oxocyclohexa-2,5-dien-1-ylidene)cyclohexa-2,5-dien-1-one Chemical compound C1=CC(=O)C=CC1=C1C=CC(=O)C=C1 DDTHMESPCBONDT-UHFFFAOYSA-N 0.000 description 2
- OBMJUDRXJXZBKI-UHFFFAOYSA-N 5-(4-tert-butylphenyl)-2-(4-phenylphenyl)-5h-1,2,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1N=CN(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 OBMJUDRXJXZBKI-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical group C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000002841 Lewis acid Substances 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 229930192627 Naphthoquinone Natural products 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 2
- 150000004056 anthraquinones Chemical class 0.000 description 2
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 2
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 2
- 238000007611 bar coating method Methods 0.000 description 2
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical compound C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 239000003729 cation exchange resin Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- MHDVGSVTJDSBDK-UHFFFAOYSA-N dibenzyl ether Chemical group C=1C=CC=CC=1COCC1=CC=CC=C1 MHDVGSVTJDSBDK-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- ZBKIUFWVEIBQRT-UHFFFAOYSA-N gold(1+) Chemical compound [Au+] ZBKIUFWVEIBQRT-UHFFFAOYSA-N 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- 150000002366 halogen compounds Chemical class 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 2
- 150000007517 lewis acids Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 150000002791 naphthoquinones Chemical class 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 229920001088 polycarbazole Polymers 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 150000003464 sulfur compounds Chemical class 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- ZGNPLWZYVAFUNZ-UHFFFAOYSA-N tert-butylphosphane Chemical compound CC(C)(C)P ZGNPLWZYVAFUNZ-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 1
- MJYFYGVCLHNRKB-UHFFFAOYSA-N 1,1,2-trifluoroethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(F)(F)CF MJYFYGVCLHNRKB-UHFFFAOYSA-N 0.000 description 1
- SPEUIVXLLWOEMJ-UHFFFAOYSA-N 1,1-dimethoxyethane Chemical compound COC(C)OC SPEUIVXLLWOEMJ-UHFFFAOYSA-N 0.000 description 1
- VJQUPFOZSDVCPC-UHFFFAOYSA-N 1,2,2',7'-tetraphenyl-9,9'-spirobi[fluorene] Chemical compound C1(=CC=CC=C1)C1=CC=2C3(C4=CC(=CC=C4C2C=C1)C1=CC=CC=C1)C1=CC=CC=C1C=1C=CC(=C(C13)C1=CC=CC=C1)C1=CC=CC=C1 VJQUPFOZSDVCPC-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- ALVZNPYWJMLXKV-UHFFFAOYSA-N 1,9-Nonanediol Chemical compound OCCCCCCCCCO ALVZNPYWJMLXKV-UHFFFAOYSA-N 0.000 description 1
- GIGRWGTZFONRKA-UHFFFAOYSA-N 1-(bromomethyl)-4-methoxybenzene Chemical compound COC1=CC=C(CBr)C=C1 GIGRWGTZFONRKA-UHFFFAOYSA-N 0.000 description 1
- BQTPKSBXMONSJI-UHFFFAOYSA-N 1-cyclohexylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1CCCCC1 BQTPKSBXMONSJI-UHFFFAOYSA-N 0.000 description 1
- OZFIGURLAJSLIR-UHFFFAOYSA-N 1-ethenyl-2h-pyridine Chemical compound C=CN1CC=CC=C1 OZFIGURLAJSLIR-UHFFFAOYSA-N 0.000 description 1
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 description 1
- ZUBZFHYBYZPADO-UHFFFAOYSA-N 1-iodo-3-(3-iodo-2-benzothiophen-1-yl)-2-benzothiophene Chemical compound C1=CC=CC2=C(I)SC(C3=C4C=CC=CC4=C(I)S3)=C21 ZUBZFHYBYZPADO-UHFFFAOYSA-N 0.000 description 1
- NAMDIHYPBYVYAP-UHFFFAOYSA-N 1-methoxy-2-(2-methoxyethoxy)ethane Chemical compound COCCOCCOC.COCCOCCOC NAMDIHYPBYVYAP-UHFFFAOYSA-N 0.000 description 1
- HIDBROSJWZYGSZ-UHFFFAOYSA-N 1-phenylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC=C1 HIDBROSJWZYGSZ-UHFFFAOYSA-N 0.000 description 1
- XWIYUCRMWCHYJR-UHFFFAOYSA-N 1h-pyrrolo[3,2-b]pyridine Chemical compound C1=CC=C2NC=CC2=N1 XWIYUCRMWCHYJR-UHFFFAOYSA-N 0.000 description 1
- VFMUXPQZKOKPOF-UHFFFAOYSA-N 2,3,7,8,12,13,17,18-octaethyl-21,23-dihydroporphyrin platinum Chemical compound [Pt].CCc1c(CC)c2cc3[nH]c(cc4nc(cc5[nH]c(cc1n2)c(CC)c5CC)c(CC)c4CC)c(CC)c3CC VFMUXPQZKOKPOF-UHFFFAOYSA-N 0.000 description 1
- SULWTXOWAFVWOY-PHEQNACWSA-N 2,3-bis[(E)-2-phenylethenyl]pyrazine Chemical compound C=1C=CC=CC=1/C=C/C1=NC=CN=C1\C=C\C1=CC=CC=C1 SULWTXOWAFVWOY-PHEQNACWSA-N 0.000 description 1
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 1
- VFBJMPNFKOMEEW-UHFFFAOYSA-N 2,3-diphenylbut-2-enedinitrile Chemical group C=1C=CC=CC=1C(C#N)=C(C#N)C1=CC=CC=C1 VFBJMPNFKOMEEW-UHFFFAOYSA-N 0.000 description 1
- KMHSUNDEGHRBNV-UHFFFAOYSA-N 2,4-dichloropyrimidine-5-carbonitrile Chemical compound ClC1=NC=C(C#N)C(Cl)=N1 KMHSUNDEGHRBNV-UHFFFAOYSA-N 0.000 description 1
- GBTIQTBNYBGTHU-UHFFFAOYSA-N 2,5-bis(4-iodo-2-methylphenyl)thiophene Chemical compound CC1=CC(I)=CC=C1C1=CC=C(C=2C(=CC(I)=CC=2)C)S1 GBTIQTBNYBGTHU-UHFFFAOYSA-N 0.000 description 1
- QYXHDJJYVDLECA-UHFFFAOYSA-N 2,5-diphenylcyclohexa-2,5-diene-1,4-dione Chemical compound O=C1C=C(C=2C=CC=CC=2)C(=O)C=C1C1=CC=CC=C1 QYXHDJJYVDLECA-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- XLPRGNUSPBHISF-UHFFFAOYSA-N 2-(4-iodophenyl)-1,3,4-oxadiazole Chemical compound C1=CC(I)=CC=C1C1=NN=CO1 XLPRGNUSPBHISF-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- PORKWWLSRFDCLR-UHFFFAOYSA-N 2-[2-[4-[2-(1,3-benzothiazol-2-yl)ethenyl]phenyl]ethenyl]-1,3-benzothiazole Chemical compound C1=CC=C2SC(C=CC=3C=CC(C=CC=4SC5=CC=CC=C5N=4)=CC=3)=NC2=C1 PORKWWLSRFDCLR-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- UDXXYUDJOHIIDZ-UHFFFAOYSA-N 2-phosphonooxyethyl prop-2-enoate Chemical compound OP(O)(=O)OCCOC(=O)C=C UDXXYUDJOHIIDZ-UHFFFAOYSA-N 0.000 description 1
- LPIQIQPLUVLISR-UHFFFAOYSA-N 2-prop-1-en-2-yl-4,5-dihydro-1,3-oxazole Chemical compound CC(=C)C1=NCCO1 LPIQIQPLUVLISR-UHFFFAOYSA-N 0.000 description 1
- 125000000175 2-thienyl group Chemical group S1C([*])=C([H])C([H])=C1[H] 0.000 description 1
- WUGOQZFPNUYUOO-UHFFFAOYSA-N 2-trimethylsilyloxyethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCO[Si](C)(C)C WUGOQZFPNUYUOO-UHFFFAOYSA-N 0.000 description 1
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 1
- QOXOZONBQWIKDA-UHFFFAOYSA-N 3-hydroxypropyl Chemical group [CH2]CCO QOXOZONBQWIKDA-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- YLYPIBBGWLKELC-UHFFFAOYSA-N 4-(dicyanomethylene)-2-methyl-6-(4-(dimethylamino)styryl)-4H-pyran Chemical compound C1=CC(N(C)C)=CC=C1C=CC1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-UHFFFAOYSA-N 0.000 description 1
- WHFMNDMHTIOIMS-UHFFFAOYSA-N 4-iodo-1-(4-iodo-2-methylphenyl)-2-methylbenzene Chemical group CC1=CC(I)=CC=C1C1=CC=C(I)C=C1C WHFMNDMHTIOIMS-UHFFFAOYSA-N 0.000 description 1
- 125000006306 4-iodophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C([H])=C1I 0.000 description 1
- MVIXNQZIMMIGEL-UHFFFAOYSA-N 4-methyl-n-[4-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 MVIXNQZIMMIGEL-UHFFFAOYSA-N 0.000 description 1
- AIXZBGVLNVRQSS-UHFFFAOYSA-N 5-tert-butyl-2-[5-(5-tert-butyl-1,3-benzoxazol-2-yl)thiophen-2-yl]-1,3-benzoxazole Chemical compound CC(C)(C)C1=CC=C2OC(C3=CC=C(S3)C=3OC4=CC=C(C=C4N=3)C(C)(C)C)=NC2=C1 AIXZBGVLNVRQSS-UHFFFAOYSA-N 0.000 description 1
- UAWLTQJFZUYROA-UHFFFAOYSA-N 6-Nitrochrysene Chemical compound C1=CC=C2C([N+](=O)[O-])=CC3=C(C=CC=C4)C4=CC=C3C2=C1 UAWLTQJFZUYROA-UHFFFAOYSA-N 0.000 description 1
- ZYASLTYCYTYKFC-UHFFFAOYSA-N 9-methylidenefluorene Chemical compound C1=CC=C2C(=C)C3=CC=CC=C3C2=C1 ZYASLTYCYTYKFC-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- JVQAWGMZPAPCPS-UHFFFAOYSA-N C=1C=CC=C(C=2C=CC=CC=2)C=1[SiH2]C1=CC=CC=C1 Chemical compound C=1C=CC=C(C=2C=CC=CC=2)C=1[SiH2]C1=CC=CC=C1 JVQAWGMZPAPCPS-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 241001481828 Glyptocephalus cynoglossus Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- MURCDOXDAHPNRQ-ZJKZPDEISA-N L-685,458 Chemical compound C([C@@H]([C@H](O)C[C@H](C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CC=1C=CC=CC=1)C(N)=O)CC=1C=CC=CC=1)NC(=O)OC(C)(C)C)C1=CC=CC=C1 MURCDOXDAHPNRQ-ZJKZPDEISA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- QPFYXYFORQJZEC-FOCLMDBBSA-N Phenazopyridine Chemical compound NC1=NC(N)=CC=C1\N=N\C1=CC=CC=C1 QPFYXYFORQJZEC-FOCLMDBBSA-N 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910006069 SO3H Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005377 adsorption chromatography Methods 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- PBYBMMHKAFZCIF-UHFFFAOYSA-N anthracene;pyrene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21.C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 PBYBMMHKAFZCIF-UHFFFAOYSA-N 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- JRXXLCKWQFKACW-UHFFFAOYSA-N biphenylacetylene Chemical group C1=CC=CC=C1C#CC1=CC=CC=C1 JRXXLCKWQFKACW-UHFFFAOYSA-N 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- QGJOPFRUJISHPQ-NJFSPNSNSA-N carbon disulfide-14c Chemical compound S=[14C]=S QGJOPFRUJISHPQ-NJFSPNSNSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 229920001429 chelating resin Polymers 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229940114081 cinnamate Drugs 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- OPHUWKNKFYBPDR-UHFFFAOYSA-N copper lithium Chemical compound [Li].[Cu] OPHUWKNKFYBPDR-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000010511 deprotection reaction Methods 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-O diazynium Chemical compound [NH+]#N IJGRMHOSHXDMSA-UHFFFAOYSA-O 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- LNBHUCHAFZUEGJ-UHFFFAOYSA-N europium(3+) Chemical compound [Eu+3] LNBHUCHAFZUEGJ-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N formic acid ethyl ester Natural products CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 229910001867 inorganic solvent Inorganic materials 0.000 description 1
- 239000003049 inorganic solvent Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- BWHLPLXXIDYSNW-UHFFFAOYSA-N ketorolac tromethamine Chemical compound OCC(N)(CO)CO.OC(=O)C1CCN2C1=CC=C2C(=O)C1=CC=CC=C1 BWHLPLXXIDYSNW-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- 229910001623 magnesium bromide Inorganic materials 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical compound C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- OMNKZBIFPJNNIO-UHFFFAOYSA-N n-(2-methyl-4-oxopentan-2-yl)prop-2-enamide Chemical compound CC(=O)CC(C)(C)NC(=O)C=C OMNKZBIFPJNNIO-UHFFFAOYSA-N 0.000 description 1
- OFESGEKAXKKFQT-UHFFFAOYSA-N n-ethenyl-n-methylformamide Chemical compound C=CN(C)C=O OFESGEKAXKKFQT-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- VEYCPJGKKJULEP-UHFFFAOYSA-N prop-2-enoic acid sulfuric acid Chemical compound OC(=O)C=C.OS(O)(=O)=O VEYCPJGKKJULEP-UHFFFAOYSA-N 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229940070891 pyridium Drugs 0.000 description 1
- GNHGQOQUCKGFCV-UHFFFAOYSA-N quinolin-8-ol;zinc Chemical compound [Zn].C1=CN=C2C(O)=CC=CC2=C1 GNHGQOQUCKGFCV-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000001119 stannous chloride Substances 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003470 sulfuric acid monoesters Chemical class 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- QKTRRACPJVYJNU-UHFFFAOYSA-N thiadiazolo[5,4-b]pyridine Chemical compound C1=CN=C2SN=NC2=C1 QKTRRACPJVYJNU-UHFFFAOYSA-N 0.000 description 1
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- NZFNXWQNBYZDAQ-UHFFFAOYSA-N thioridazine hydrochloride Chemical compound Cl.C12=CC(SC)=CC=C2SC2=CC=CC=C2N1CCC1CCCCN1C NZFNXWQNBYZDAQ-UHFFFAOYSA-N 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- ZWYDDDAMNQQZHD-UHFFFAOYSA-L titanium(ii) chloride Chemical compound [Cl-].[Cl-].[Ti+2] ZWYDDDAMNQQZHD-UHFFFAOYSA-L 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- SXXNJJQVBPWGTP-UHFFFAOYSA-K tris[(4-methylquinolin-8-yl)oxy]alumane Chemical compound [Al+3].C1=CC=C2C(C)=CC=NC2=C1[O-].C1=CC=C2C(C)=CC=NC2=C1[O-].C1=CC=C2C(C)=CC=NC2=C1[O-] SXXNJJQVBPWGTP-UHFFFAOYSA-K 0.000 description 1
- 229940117958 vinyl acetate Drugs 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
- C08F290/06—Polymers provided for in subclass C08G
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
- C08F290/06—Polymers provided for in subclass C08G
- C08F290/061—Polyesters; Polycarbonates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
- H10K85/6565—Oxadiazole compounds
Definitions
- the present invention relates to a composition for conductive materials, a conductive material, a conductive layer, an electronic device, and electronic equipment, and more specifically to a composition for conductive materials from which a conductive layer having a high carrier transport ability can be made, a conductive material formed of the composition and having a high carrier transport ability, a conductive layer formed using the conductive material as a main material, an electronic device provided with the conductive layer and having high reliability, and electronic equipment provided with the electronic device.
- organic EL device (hereinafter, simply referred to as an "organic EL device”) have been extensively developed in expectation of their use as solid-state luminescent devices or emitting devices for use in inexpensive large full-color displays.
- such an organic EL device has a structure in which a light emitting layer is provided between a cathode and an anode.
- a light emitting layer is provided between a cathode and an anode.
- the injected electrons and holes are recombined in the light emitting layer, which then causes their energy level to return from the conduction band to the valence band. At this time, excitation energy is released as light energy so that the light emitting layer emits light.
- a layered device structure in which organic layers formed of organic materials having different carrier transport properties for electrons or holes are provided between a light emitting layer and a cathode and/or an anode, is effective in obtaining a high-efficiency organic EL device with high luminance.
- organic layers having different carrier transport properties from each other (hereinafter, these layers are collectively referred to as "organic layers") on the electrode.
- organic layers organic layers having different carrier transport properties from each other
- composition for conductive materials which comprises a compound represented by the following general formula (Al) :
- R 1 S are the same or different and each independently represents a straight-chain alkyl group having 2 to 8 carbon atoms
- four R 2 S are the same or different and each independently represents a hydrogen atom, a methyl group or an ethyl group
- Y represents a group containing at least one substituted or unsubstituted aromatic hydrocarbon ring or substituted or unsubstituted heterocycle
- two X 1 S are the same or different and each independently represents a substituent represented by the following general formula (A2) :
- n 1 is an integer of 2 to According to the present invention described above, it is possible to provide a composition for conductive materials from which a conductive layer having a high carrier transport ability can be made.
- the group Y contains at least one substituted or unsubstxtuted aromatic hydrocarbon ring.
- composition for conductive materials according to the present invention it is also preferred that the two substituents X 1 are identical with each other.
- substituent X 1 is bonded to the 3-, 4- or 5-position of the benzene ring.
- the two substituents R 1 are identical with each ' other.
- the substituent R 1 is bonded to the 4-position of the benzene ring.
- the group Y consists of carbon atoms and hydrogen atoms.
- the group Y contains 6 to 30 carbon atoms in total.
- the group Y contains 1 to 5 aromatic hydrocarbon rings.
- the group Y is a biphenylene group or a derivative thereof.
- composition for conductive materials further comprises a vinyl compound which cross-l ' inks the compounds each represented by the general formula (Al).
- the vinyl compound contains at least two reaction groups which can react with the substituent X 1 .
- Such a vinyl compound has a higher reactivity. Therefore, in a polymer (conductive material) obtained by direct polymerization or polymerization via the vinyl compound of the substituents X 1 of the compounds each represented by the general formula (Al) , the number of unreacted substituents X 1 can be properly decreased, and a ratio of chemical structures produced by cross-linking the substituents X 1 with the vinyl compound can be made higher than that of chemical structures produced by cross-linking the substituents X 1 directly.
- the vinyl compound contains a regulatory portion provided between the two reaction groups to regulate an interval between them.
- an interval between main skeletons is maintained at a more suitable interval in chemical structures produced by cross-linking the substituents X 1 with the vinyl compound, and therefore interaction between the main skeletons can be prevented more reliably.
- a polymer (conductive material) containing a higher ratio of such chemical sutructures can exhibit a higher carrier transport ability.
- the regulatory portion has a straight-chain structure.
- the number of atoms linking so as to have a straight-chain structure is 9 to 50. This makes it possible to maintain an interval between main skeletons at a more suitable interval in a resultant conductive material, so that interaction between the main skeletons can be prevented. Therefore, the conductive material can exhibit a higher carrier transport ability.
- the vinyl compound mainly comprises a polyethylene glycol di (meth) acrylate represented by the following general formula (Bl).
- n 2 is an integer of 3 to 15
- two A 1 S are the same or different and each independently represents a hydrogen atom or a methyl group.
- the conductive material can exhibit a higher carrier transport ability.
- composition for conductive materials according to the present invention it is also preferred that the two substituents X 1 are identical with each other.
- each substituent X 1 is bonded to the 3-, 4- or 5-position of the benzene ring.
- each substituent R 1 is bonded to the 4-position of the benzene ring.
- the group Y consists of carbon atoms and hydrogen atoms .
- the group Y contains 6 to 30 carbon atoms in total .
- the group Y contains 1 to 5 aromatic hydrocarbon rings .
- the group Y is a biphenylene group or a derivative thereof.
- the group Y contains at least one substituted of unsubstituted heterocycle .
- each substituent X 1 is bonded to the 3-, 4- or 5-position of the benzene ring.
- the two substituents R 1 are identical with each other. This makes it possible for adjacent polymers to exist at a substantially certain interval in a conductive layer to be formed from the composition. As a result, it becomes possible to reliably decrease the interaction between the adjacent main skeletons of different polymers, thereby enabling the conductive layer to have a high carrier transport ability.
- each substituent R 1 is bonded to the 4-position of the benzene ring.
- the heterocycle contains at least one heteroatom selected from the group comprising nitrogen, oxygen, sulfur, selenium and tellurium.
- the energy level of the valence and conduction bands or the size of the band gap of the polymer easily changes, so that it is possible to change the characteristics of the carrier transport ability of the polymer.
- the heterocycle may be either of an aromatic heterocycle or a nonaromatic heterocycle, but the aromatic heterocycle is more preferable.
- the group Y contains 1 to 5 heterocycles .
- the group Y By allowing the group Y to have such a number of heterocyclic rings, it is possible to sufficiently change the energy level of the valence and conduction bands or the size of the band gap of the polymer.
- the group Y contains at least one substituted or unsubstituted aromatic hydrocarbon ring in addition to the heterocycle .
- the group Y contains two aromatic hydrocarbon rings respectively bonded to each N in the general formula (Al) directly and at least one heterocycle existing between these aromatic hydrocarbon rings.
- the group Y contains 2 to 75 carbon atoms in total .
- the solubility of the compound represented by the general formula (Al) in a solvent tends to be increased, so that there is a possibility that the range of the choices of solvents to be used in preparing the composition for conductive materials becomes wide.
- the above composition further comprises a vinyl compound, that is a cross-linking agent which cross-links the substituents X 1 of the compounds each represented by the general formula (Al) .
- the vinyl compound contains at least two reaction groups which can react with the substituent X 1 .
- Such a vinyl compound has a higher reactivity. Therefore, in a polymer (conductive material) obtained by direct polymerization or polymerization via the vinyl compound of the substituents X 1 of the compounds each represented by the general formula (Al) , the number of the substituents X 1 can be properly decreased, and a ratio of chemical structures produced by cross-linking substituents X 1 with the vinyl compound can be made higher than that of chemical structures produced by cross-linking substituents X 1 directly.
- the vinyl compound contains a regulatory portion provided between the two reaction groups to regulate an interval between them.
- the regulatory portion By using such a vinyl compound containing the regulatory portion, an interval between main skeletons is maintained at a more suitable interval in chemical structures produced by cross-linking substituents X 1 with the vinyl compound, and therefore interaction between the main skeletons can be prevented more reliably. As a result, a polymer (conductive material) containing a high ratio of such chemical sutructures can exhibit a higher carrier transport ability. Furthermore, in the composition described above, it is also preferred that the regulatory portion has a straight-chain structure .
- the number of atoms linking so as to have a straight-chain structure is 9 to 50.
- the conductive material can exhibit a higher carrier transport ability.
- the vinyl compound mainly comprises a polyethylene glycol di (meth) acrylate represented by the following general formula (Bl).
- n 2 is an integer of 3 to 15
- two A 1 S are the same or different and each independently represents a hydrogen atom or a methyl group.
- each substituent X 1 is bonded to the 3-, 4- or 5-position of the benzene ring.
- each substituent R 1 is bonded to the 4-position of the benzene ring.
- the heterocycle contains at least one heteroatom selected from the group comprising nitrogen, oxygen, sulfur, selenium and tellurium.
- the energy level of the valence and conduction bands or the size of the band gap of the polymer easily changes, so that it is possible to change the characteristics of the carrier transport ability of the polymer.
- the heterocycle may be either of an aromatic heterocycle or a nonaromatic heterocycle, but the aromatic heterocycle is more preferable.
- the group Y contains 1 to 5 heterocycles .
- the group Y By allowing the group Y to have such a number of heterocyclic rings, it is possible ' to sufficiently change the energy level of the valence and conduction bands or the size of the band gap of the polymer.
- the group Y contains at least one substituted or unsubstituted aromatic hydrocarbon ring in addition to the heterocycle .
- the group Y contains two aromatic hydrocarbon rings respectively bonded to each N in the general formula (Al) directly and at least one heterocycle existing between these aromatic hydrocarbon rings.
- the group Y contains 2 to 75 carbon atoms in total .
- the solubility of the compound represented by the general formula (Al) in a solvent tends to be increased, so that there is a possibility that the range of the choices of solvents to be used in preparing the composition for conductive materials becomes wide.
- Another aspect of the present invention is directed to a conductive material obtained by direct polymerization or polymerization via a vinyl compound of substituents X 1 of compounds each represented by the following general formula (Al), the vinyl compound having the function of cross-linking the substituents X 1 of the compounds, the compounds being contained in the composition for conductive materials defined in claim 1 :
- R 1 S are the same or different and each independently represents a straight-chain alkyl group having 2 to 8 carbon atoms
- four R 2 S are the same or different and each independently represents a hydrogen atom, a methyl group, or an ethyl group
- Y represents a group containing at least one substituted or unsubstituted aromatic hydrocarbon ring or substituted or unsubstituted heterocycle
- two X 1 S are the same or different and each independently represents a substituent represented by the following general formula (A2) :
- n 1 is an integer of 2 to 8.
- the compounds are polymerized by light irradiation.
- both the compound and the vinyl compound are polymerized by light irradiation.
- a conductive layer mainly comprising the conductive material as described above.
- This conductive layer can have a high carrier transport ability.
- the conductive layer is used for a hole transport layer.
- This hole transport layer can also have a high hole transport ability.
- the average thickness of the hole transport layer is in the range of 10 to 150 nm.
- the conductive layer of the present invention described above may be used for an electron transport layer.
- Such an electron transport layer can also have a high electron transport ability.
- the average thickness of the electron transport layer is in the range of 1 to 100 nm.
- the conductive layer of the present invention described above may be used for an organic semiconductor layer. Such an organic semiconductor layer can exhibit excellent semiconductor characteristics.
- the average thickness of the organic semiconductor layer is in the range of 0.1 to 1,000 nm.
- the other aspect of the present invention is directed to an electronic device comprising a laminated body which includes the conductive layer as described above.
- Such an electronic device can have high reliability.
- Examples of the electronic device may include a light emitting device and a photoelectric transducer. These light emitting device and photoelectric transducer can also have high reliability.
- the light emitting device includes an organic EL device.
- Such an organic EL device can also have high reliability.
- examples of the electronic device may also include a switching element.
- a switching element can also have high reliability.
- the switching element includes an organic thin film transistor.
- Such an organic thin film transistor can also have high reliability.
- Yet other aspect of the present invention is directed to electronic equipment comprising the electronic device described above. ' Such electronic equipment can also have high reliability.
- FIG. 1 is a cross-sectional view which shows an example of an organic EL device
- FIG. 2 (a) is a cross-sectional view of an organic TFT
- FIG. 2 (b) is a plan view of the organic TFT
- FIG. 3 (a) to FIG. 3 (d) are illustrations which explain the manufacturing method of the " organic TFT shown in FIG. 2;
- FIG. 4 (a) to FIG. 4 (d) are illustrations which explain the manufacturing method of the organic TFT shown in FIG. 2;
- FIG. 5 is a perspective view which shows the structure of a personal mobile computer (or a personal notebook computer) to which the electronic equipment according to the present invention is applied;
- FIG. 6 is a perspective view which shows the structure of a mobile phone (including the personal handyphone system (PHS) ) to which the electronic equipment according to the present invention is applied; and
- PHS personal handyphone system
- FIG. 7 is a perspective view which shows the structure of a digital still camera to which the electronic equipment according to the present invention is applied.
- a conductive material according to the present invention contains as its main ingredient a polymer obtained by direct polymerization reaction at substituents X 1 of compounds (which are an arylamine derivative) each represented by the following general formula (Al) , that is, a polymer in which adjacent main skeletons except the substituents X 1 are linked via a chemical structure formed by the direct reaction between the substituents X 1 (hereinafter, this chemical structure is collectively called as "first link structure”) .
- R 1 S are the same or different and each independently represents a straight-chain alkyl group having 2 to 8 carbon atoms
- four R 2 S are the same or different and each independently represents a hydrogen atom, a methyl group, or an ethyl group
- two X 1 S are the same or different and each independently represents a substituent represented by the following general formula (A2)
- Y represents a group containing at least one substituted or unsubstituted aromatic ring hydrocarbon or a group containing at least one substituted or unsubstituted heterocycle.
- n 1 is an integer of 2 to
- Such a polymer has a structure in which the adjacent main skeletons are repeatedly linked via the first link structure, that is, a structure in which the adjacent main skeletons repeatedly exist at a predetermined interval. Therefore, the interaction between the adjacent main skeletons decreases.
- Each main skeleton has a conjugated chemical structure, and a unique spread of the electron cloud thereof contributes to smooth transportation of carriers (holes or electrons) in the polymer.
- the polymer exhibits a high carrier transport ability. Therefore, a conductive layer obtained by using such a polymer as its main material also has a high carrier transport ability.
- the structure of the substituent X 1 is determined in view of these facts. Specifically, it is preferred that the substituent X 1 represented by the general formula (A2) has a straight-chain carbon-carbon link (i.e., an alkylene group) in which n 1 is 2 to 8, in particular 4 to 7. This makes it possible for the adjacent main skeletons to exist at a suitable interval, thereby reliably decreasing the interaction between the adjacent main skeletons in a resultant polymer. In addition, it is also possible to transfer carriers between the main skeletons more reliably so that the resultant polymer has a high carrier transport ability.
- a straight-chain carbon-carbon link i.e., an alkylene group
- each of the two substituents X 1 contains substantially the same number of carbon atoms, and more preferably the same number of carbon atoms. This makes it possible for the adjacent main skeletons to exist at an interval of a certain distance. As a result, it is possible to prevent the electron density in the polymer from being biased. This makes it possible to improve the carrier transport ability of the polymer.
- each substituent X 1 has a vinyl ether group as its functional group. Since the vinyl ether group has high reactivity and bonding stability, it is relatively easy to polymerize substituents X 1 directly to form a polymer having a long chain length.
- the first link structure has a structure having many conjugated ⁇ bonds such as a benzene ring, interaction occurs between the adjacent main skeletons through such a structure, which cancels the effect obtained by allowing the adjacent main skeletons to exist at a suitable interval.
- the substituent X 1 may be bonded to the 2-, 3-, 4-, 5- or 6-position of the benzene ring, but preferably bonded to the 3-, 4- or 5-position. This makes it possible to conspicuously exhibit the effect obtained by linking the adjacent main skeletons via the first link structure. Namely, it is possible for the adjacent main skeletons to exist at a suitable interval more reliably.
- the substituent R 1 has a straight-chain alkyl group having 2 to 8 carbon atoms, preferably 3 to 6 carbon atoms. This makes it possible for adjacent polymers to exist at a suitable interval by preventing the adjacent polymers from closely approaching to each other by steric hindrance of the substituent R 1 . As a result, it becomes possible to reliably decrease the interaction between the adjacent main skeletons of different polymers in a conductive layer to be formed, thereby enabling the conductive layer to have a high carrier transport ability.
- the two substituents R 1 contain substantially the same number of carbon atoms, and more preferably the same number of carbon atoms. This makes it possible for the adjacent polymers to exist at an interval of a certain distance in the conductive layer. As a result, the density of polymers in the conductive layer becomes uniform.
- the substituent R 1 may be bonded to any of the 2- to 6-position of a benzene ring, but preferably it is bonded to the 4-position. This makes it possible to exhibit the effect of introduction of the substituents R 1 more conspicuously. Namely, it is possible to reliably prevent the adjacent polymers from closely approaching to each other.
- the substituent R 2 is a hydrogen atom, a methyl group, or an ethyl group, and the substituent R 2 is selected in accordance with the number of carbon atom in the substituent R 1 . Specifically, when the number of carbon atom in the substituent R 1 is large, a hydrogen atom is selected as the substituent R 2 , while when the number of carbon atom in the substituent R 1 is small, a methyl group or an ethyl group is selected as the substituent R 2 .
- the carrier transport properties of the polymer by appropriately setting the chemical structure of a group (or a linking group) Y.
- the reason for this can be considered as follows.
- the energy level of the valence and conduction bands or the size of the band gap is changed according to changes in the spread of the electron cloud (i.e., distribution of electrons) in the main skeleton which contributes to carrier transportation.
- the group Y contains at least one substituted or unsubstituted aromatic hydrocarbon ring or at least one substituted or unsubstituted heterocyclic ring. By selecting kinds of the aromatic hydrocarbon ring and/or heterocyclic ring appropriately, it is possible to adjust carrier transport properties in a resultant polymer relatively easily.
- the group Y has 6 to 30 carbon atoms, more preferably 10 to 25 carbon atoms, and even more preferably 10 to 20, in total.
- the number of aromatic hydrocarbon ring is 1 to 5, more preferably 2 to 5, and even more preferably 2 to 3.
- the hole transport property of the resultant polymer becomes excellent, and thus the resultant conductive layer can also have an excellent hole transport ability.
- such a heterocyclic ring contains at least one heteroatom selected from among nitrogen, oxygen, sulfur, selenium, and tellurium.
- the heterocyclic ring may be either an aromatic heterocycle or a nonaromatic heterocycle, but an aromatic heterocycle is preferably used.
- an aromatic heterocycle it is possible to properly prevent the electron density of the main skeleton with a conjugated chemical structure from being biased, that is, it is possible to properly prevent localization of ⁇ electrons. As a result, the carrier transport ability of the polymer is prevented from being impaired.
- the group Y preferably contains 1 to 5 heterocyclic rings, and more preferably 1 to 3 heterocyclic rings . In the case where the group Y contains 2 or more heterocyclic rings, these rings are the same or different. By allowing the group Y to have such a number of heterocyclic rings, it is possible to sufficiently change the energy level of the valence and conduction bands or the size of the band gap of the polymer.
- the group Y may further contain at least one aromatic hydrocarbon ring in addition to the at least one heterocyclic ring.
- the group Y preferably contains two aromatic hydrocarbon rings each bonded to each N in the general formula (Al) directly and at least one heterocyclic ring which exists between these aromatic hydrocarbon rings.
- the group Y preferably has 2 to 75 carbon atoms, and more preferably 2 to 50 carbon atoms, in total. If the group Y has too many carbon atoms in total, the solubility of the compound represented by the general formula (Al) in a solvent tends to be lowered depending on the kind of substituent X 1 used, creating a possibility that the range of the choices of solvents to be used in preparing the composition for conductive materials according to the present invention becomes narrow.
- each Q 1 is the same or different and each independently represent N-T 1 , S, 0, Se, or Te (where T 1 represents H, CH 3 , or Ph)
- each Q 2 is the same or different and each independently represent S or O
- each Q 3 is the same or different and each independently represent N-T 3 , S, 0, Se, or Te (where T 3 represents H, CH 3 , C 2 H 5 or Ph) .
- a polymer obtained by selecting, for example, any one of the chemical formulas (D2), (Dl ⁇ ) , (D18) and (D20) as the group Y can exhibit a high hole transport ability as compared to a polymer obtained by selecting the chemical formula (D17) and can exhibit an especially high hole transport ability as compared to a polymer obtained by selecting the chemical formula (D8) or (D19) .
- a polymer obtained by selecting any one of the chemical formulas (D8), (D17) and (D19) as the group Y can exhibit a high electron transport ability as compared to a polymer obtained by the chemical formula (D2) or (D16) . Further, the polymer obtained by selecting any one of the chemical formulas (D8) , (D17) and (D19) as the group Y can also exhibit an especially high electron transport ability as compared to a polymer obtained by selecting the chemical formula ( D18 ) or ( D20 ) .
- the unsubstituted heterocyclic ring and/or the unsubstituted aromatic hydrocarbon ring contained in the group Y may introduce a substituent so long as the planarity of the main skeleton is not greatly affected.
- a substituent include an alkyl group having a relatively small number of carbon atoms such as a methyl group or an ethyl group or and a halogen group and the like.
- the polymer contains a second link structure produced by polymerization reaction (s) of a substituent X 1 and a substituent X 1 with a vinyl compound, that is a cross-linking agent which cross-links the substituents X 1 of the compounds each represented by the general formula (Al) in addition to the first link structure produced by the direct polymerization reaction of the substituents X 1 as described above.
- a second link structure produced by polymerization reaction (s) of a substituent X 1 and a substituent X 1 with a vinyl compound, that is a cross-linking agent which cross-links the substituents X 1 of the compounds each represented by the general formula (Al) in addition to the first link structure produced by the direct polymerization reaction of the substituents X 1 as described above.
- the substituent X 1 represented by the general formula (A2) has a straight-chain carbon-carbon link (i.e., an alkylene group) in which n 1 is 2 to 8, in particular 2 to 6.
- n 1 is 2 to 8, in particular 2 to 6.
- each of the two substituents X 1 contain substantially the same number of carbon atoms, and more preferably the same number of carbon atoms. This makes it possible for the adjacent main skeletons to exist at an interval of a certain distance in spite of the case where the first linking structure and/or the second link structure is produced. As a result, it is possible to prevent the electron density in the polymer from being biased. This makes it possible to improve the carrier transport ability of the polymer.
- the vinyl compound used in the present invention has at least one reaction group which can react with the substituent X 1 (hereinbelow, simply referred to as "reaction group”) .
- the reaction group is a reaction portion which cross-links the substituents X 1 of the compounds each represented by the general formula (Al) .
- examples of such a reaction group include a vinyl group or a (meth) acryloyl group. These reaction groups have a high reactivity to the substituent X 1 . Therefore, the vinyl compound having such a reaction group also has a high reactivity to the compounds each represented by the general formula (Al) . For this reason, when the compounds each represented by the general formula (Al) are ' polymerized directly or polymerized via the vinyl compound at the substituents X 1 thereof, it is possible to promote reaction between the substituent X 1 and the reaction group. As a result, the number of unreacted substituents X 1 can be reduced in a resultant polymer.
- a vinyl compound having two or more reaction groups is preferably selected. Since such a vinyl compound has a plurality of reaction portions, it becomes possible for the vinyl compound to exhibit a higher reactivity to the compounds having the substituents X 1 . As a result, the number of unreacted substituents X 1 can be conspicuously decreased in a resultant polymer, and a ratio of chemical structures produced by cross-linking substituents X 1 with the vinyl compound can be made higher than that of chemical structures produced by cross-linking substituents X 1 directly.
- the vinyl compound can come in contact with the substituents X 1 reliably, and therefore it is possible to reliably promote polymerization between the substituent X 1 and the reaction group.
- the number of the unreacted substituents X 1 can be preferably decreased in a resultant polymer.
- a ratio of polymerization of the substituents X 1 via the vinyl compound is higher than that of direct polymerization of the substituents X 1 , the number of chemical structures produced by cross-linking the substituents X 1 with the vinyl compound can be made higher in the polymer.
- a vinyl compound which contains a regulatory portion provided between two reaction groups and regulating an interval between them is preferably selected.
- the interval between the main skeletons is maintained at a more suitable interval in chemical structures produced by cross-linking the substituents X 1 with the vinyl compound containing the regulatory portion, and therefore interaction between the main skeletons can be prevented more reliably.
- a polymer containing a higher ratio of such chemical sutructures can exhibit a higher carrier transport ability.
- link structures produced by direct polymerization of the substituents X 1 can separate main skeletons and decrease interaction between the main skeletons sufficiently.
- link structures produced by polymerization of the substituents X 1 via the vinyl compound having a regulatory portion can maintain a more suitable interval between the main skeletons as compared to the link structures produced by direct polymerization of the substituents X 1 , and therefore the link structures produced by polymerization of the substituents X 1 via the vinyl compound can decrease the interaction between the main skeletons more reliably.
- Examples of such a regulatory portion include one having a straight-chain structure, one having a branching structure, one having a ring structure, or a combination of them, but the regulatory portion is preferably one having a straight-chain structure. This makes it possible to reliably regulate an interval between main skeletons to a suitable interval (that is, to reliably prevent interval between main skeletons from becoming short) in a resultant polymer, thereby enabling to improve a carrier transport ability of a resultant conductive- material .
- the regulatory portion having the straight-chain structure is constituted from a non-conjugated molecular structure such as saturated hydrocarbon
- the non-conjugated molecular structure can exist between benzene rings of the main skeletons.
- Examples of the vinyl compound containing the regulatory portion having the straight-chain structure include multifunctional polymerizable monomers such as ethylene glycol di (meth) acrylate, diethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, polyethylene glycol di (meth) acrylate, 1, 4-butanediol di (meth) acrylate, 1, 6-hexisanediol di (meth) acrylate, 1, 9-nonanediol di (meth) acrylate, polypropyrene glycol di (meth) acrylate, or gricerine glycol di (meth) acrylate, multifunctional nitrogen containing polymerizable monomers such as methyrene bis (meth) acrylamide, epoxy group containing polymerizable monomers such as glycidyl (meth) acrylate, a -methylglycidyl (meth) acrylate, isocyanate group containing polymerizable monomers such as
- the number of atoms linking so as to have a straight-chain structure is preferably in the range of about 9 to 50, and more preferably in the range of about 20 to 30. This makes it possible to maintain an interval between main skeletons at a more suitable interval in a resultant polymer, so that interaction between the main skeletons can be prevented. Therefore, the polymer can exhibit a higher carrier transport ability.
- the especially preferable vinyl compound containing the regulatory portion having the straight-chain structure is polyethylene glycol di (meth) acrylate represented by the following general formula (Bl) .
- n 2 is an integer of 3 to 15, and two A 1 S are the same or different and each independently represents a hydrogen atom or a methyl group.
- the polymer can exhibit a higher carrier transport ability.
- n 2 is preferably in the range of 6 to 9. By setting n 2 to a value within the above range, the polymer can conspicuously exhibit a higher carrier transport ability.
- the vinyl compound having one reaction group or the vinyl compound having three or more reaction groups can be used instead of the vinyl compound mentioned above.
- vinyl compound having one reaction group examples include (meth) acrylates such as methyl (meth) acrylate, ethyl
- (meth) acrylate 4-hydroxybuthyl (meth) acrylate, methyl ( a -hydroxymethyl) acrylate, ethyl ( ⁇ -hydroxymethyl) acrylate, 4-hydroxymethylcyclohexylmethyl (meth) acrylate, and caprolactone modified hydroxyl (meth) acrylate; acid functionality-containing (meth) acrylates such as acrylic acid, methacrylic acid, maleic acid, fumaric acid, crotonic acid, itaconic acid, maleic anhydride, sulfoethyl (meth) acrylate, 2- (meth) acryloyloxyethylacidphosphate,
- Examples of a vinyl compound having 3 reaction groups include EO modified trimethyrolpropane tri (meth) acrylate, pentaerithritol tri (meth) acrylate, and tris (meth) acryloyloxyethylphosphate.
- Examples of a vinyl compound having 4 or more reaction groups include pentaerithritol tetra (meth) acrylate, and dipentaerithritol hexa (meth) acrylate .
- Such a conductive layer also has excellent solvent resistance, because it is formed of a polymer as its main material which is obtained by direct polymerization reaction of the compounds each represented by the above-mentioned general formula (Al) or polymerization reaction of the compounds via the vinyl compound.
- a polymer as its main material which is obtained by direct polymerization reaction of the compounds each represented by the above-mentioned general formula (Al) or polymerization reaction of the compounds via the vinyl compound.
- the electronic device of the present invention is embodied as an organic electroluminescent device (hereinafter, simply referred to as an "organic EL device") that is a light emitting device .
- organic EL device an organic electroluminescent device
- FIG. 1 is a cross-sectional view which shows an example of the organic EL device.
- the organic EL device 1 shown in FIG. 1 includes a transparent substrate 2, an anode 3 provided on the substrate 2, an organic EL layer 4 provided on the anode 3, a cathode 5 provided on the organic EL layer 4 and a protection layer 6 provided so as to cover these layers 3, 4 and 5.
- the substrate 2 serves as a support for the organic EL device 1, and the layers described above are formed on the substrate 2.
- a material having a light-transmitting property and a good optical property can be used as a constituent material of the substrate 2.
- Such a material examples include various resins such as polyethylene terephthalate, polyethylene naphthalate, polypropylene, cycloolefin polymer, polyamide, polyethersulfone, polymethylmethacrylate, polycarbonate, and polyarylate, and various glass materials, and the like. At least one of these materials can be used as a constituent material of the substrate 2.
- the average thickness of the substrate 2 is not particularly limited, but is preferably in the range of about 0.1 to 30 mm, and more preferably in the range of about 0.1 to 10 mm.
- the anode 3 is an electrode which injects holes into the organic EL layer 4 (that is, into a hole transport layer 41 described later) .
- This anode 3 is made substantially transparent (which includes transparent and colorless, colored and transparent, or translucent) so that light emission from the organic EL layer 4 (that is, from a light emitting layer 42 described later) can be visually identified.
- anode material a material having a high work function, excellent conductivity, and a light transmitting property is preferably used as the constituent material of the anode 3 (hereinafter, referred to as "anode material") .
- anode material examples include oxides such as ITO (Indium Tin Oxide), SnO 2 , Sb-containing SnO 2 , and Al-containing ZnO, Au, Pt, Ag, Cu, and alloys containing two or more of them. At least one of these materials can be used as an anode material.
- oxides such as ITO (Indium Tin Oxide), SnO 2 , Sb-containing SnO 2 , and Al-containing ZnO, Au, Pt, Ag, Cu, and alloys containing two or more of them. At least one of these materials can be used as an anode material.
- the average thickness of the anode 3 is not limited to any specific value, but is preferably in the range of about 10 to 200 nm, and more preferably in the range of about 50 to 150 nrn. If the thickness of the anode 3 is too thin, there is a case that a function of the anode 3 will not be sufficiently- exhibited. On the other hand, if the anode 3 is too thick, there is a case that the light transmittance will be significantly lowered depending on, for example, the kind of anode material used, thus resulting in an organic EL device that is not suitable for practical use.
- the cathode 5 is an electrode which injects electrons into the organic EL layer 4 (that is, into an electron transport layer 43 described later) .
- cathode material As a constituent material of the cathode 5 (hereinafter, referred to as "cathode material”) , a material having a low work function is preferably used.
- cathode material examples include Li, Mg, Ca, Sr, La, Ce, Er, Eu, Sc, Y, Yb, Ag, Cu, Al, Cs, Rb, and alloys containing two or more of them. At least one of these materials can be used as a cathode material.
- an alloy containing a stable metallic element such as Ag, Al, or Cu specifically an alloy such as MgAg, AlLi, or CuLi is preferably used.
- an alloy containing a stable metallic element such as Ag, Al, or Cu
- an alloy such as MgAg, AlLi, or CuLi is preferably used.
- the use of such an alloy as a cathode material makes it possible to improve the electron injection efficiency and stability of the cathode 5.
- the average thickness of the cathode 5 is preferably in the range of about 1 nm to 1 ⁇ m, and more preferably in the range of about 100 to 400 nm. If the thickness of the cathode 5 is too thin, there is a case that a function of the cathode 5 will not be sufficiently exhibited. On the other hand, if the cathode 5 is too thick, there is a case that the light emitting efficiency of the organic EL device 1 will be lowered.
- the organic EL layer 4 is provided between the anode 3 and the cathode 5.
- the organic EL layer 4 includes the hole transport layer 41, the light emitting layer 42, and the electron transport layer 43. These layers 41, 42 and 43 are formed on the anode 3 in this order.
- the hole transport layer 41 has the function of transporting holes, which are injected from the anode 3, to the light emitting layer 42.
- the electron transport layer 43 has the function of transporting electrons, which are injected from the cathode 5/ to the light emitting layer 42.
- the conductive material according to the present invention can be used as a constituent material for one of the hole transport layer 41 and the electron transport layer 43 or for both the layers 41, 43.
- a compound having a chemical structure of the group Y which is constituted from a substituted or unsubstituted aromatic hydrocarbon ring can be used.
- the constituent material of the electron transport layer 43 are not limited to specific materials, and various materials can be used for the electron transport layer 43.
- examples of such materials that can be used for the electron transport layer 43 include: benzene-based compounds (starburst-based compounds) such as 1, 3, 5-tris [ (3-phenyl-6-tri-fluoromethyl) quinoxaline-2-yl] benzene (TPQl), and
- benzene 1, 3, 5-tris [ ⁇ 3- (4-t-butylphenyl) -6-trisfluoromethyl Jquinoxal ine-2-yl] benzene (TPQ2); naphthalene-based compounds such as naphthalene; phenanthrene-based compounds such as phenanthrene; chrysene-based compounds such as chrysene; perylene-based compounds such as perylene; anthracene-based compounds such as anthracene; pyrene-based compounds such as pyrene; acridine-based compounds such as acridine; stilbene-based compounds such as stilbene; thiophene-based compounds such as BBOT; butadiene-based compounds such as butadiene; coumarin-based compounds such as coumarin; quinoline-based compounds such as quinoline; bistyryl-based compounds such as bistyryl; pyrazine-based compounds such as pyrazine and
- a constituent material of the hole transport layer 41 and a constituent material of the electron transport layer 43 are selected in consideration of their hole transport ability and electron transport ability.
- these constituent materials are selected so that the hole transport ability of the hole transport layer 41 becomes relatively higher than that of the electron transport layer 43 and the electron transport ability of the hole transport layer 41 becomes relatively lower than that of the electron transport layer 43.
- these constituent materials are selected so that the electron transport ability of the electron transport layer 43 becomes relatively higher than that of the hole transport layer 41 and the hole transport ability of the electron transport layer 43 becomes relatively lower than that of the hole transport layer 41.
- a conductive material for forming an electron transport layer 43 is preferably a polymer of a compound represented by the general formula (Al) in which the group Y has a chemical structure represented by the chemical formula (D7) or (D19) .
- a polymer of a compound represented by the general formula (Al) in which the group Y has a chemical structure represented by the chemical formula (D17) may also be used as a conductive material for forming the electron transport layer 43.
- the conductive material for forming the hole transport layer 41 may also be a polymer of a compound represented by the general formula (Al) in which the group Y has a chemical structure represented by the chemical formula (D2) or (D16) .
- the volume resistivity of the hole transport layer 41 is preferably 10 ⁇ -cm or larger, and more preferably 10 2 ⁇ -cm or larger. This makes it possible to provide an organic EL device 1 having a higher light emitting efficiency.
- the average thickness of the hole transport layer 41 is not limited to any specific value, but is preferably in the range of about 10 to 150 nm, and more preferably in the range of about 50 to 100 nm. If the thickness of the hole transport layer 41 is too thin, there is a case that a pin hole may be produced.
- the thickness of the hole transport layer 41 is too thick, there is a case that the transmittance of the hole transport layer 41 may be lowered so that the chromaticity (hue) of luminescent color of the organic EL device 1 is changed.
- the average thickness of the electron transport layer 43 is not limited to any specific value, but is preferably in the range of about 1 to 100 nm, and more preferably in the range of about 20 to 50 nm. If the thickness of the electron transport layer 43 is too thin, there is a case that a pin hole may be produced, thereby causing a short-circuit. On the other hand, if the electron transport layer 43 is too thick, there is a case that the value of resistance may become high.
- the conductive material according to the present invention is particularly useful for forming a relatively thin hole transport layer 41 or electron transport layer 43.
- any material can be used as a constituent material of the light emitting layer 42 (hereinafter, referred to as "light emitting material”) so long as it can provide a field where holes can be injected from the anode 3 and electrons can be injected from the cathode ' 5 during the application of a voltage to allow the holes and ' the electrons to be recombined.
- Such light emitting materials include various low-molecular light emitting materials and various high-molecular light emitting materials (which will be mentioned below) . At least one of these materials can be used as a light emitting material.
- the use of a low-molecular light emitting material makes it possible to obtain a dense light emitting layer 42, thereby improving the light emitting efficiency of the light emitting layer 42. Further, since a high-molecular light emitting material is relatively easily dissolved in a solvent, the use of such a high-molecular light emitting material makes it easy to form a light emitting layer 42 by means of various application methods such as an ink-jet method and the like.
- the low-molecular light emitting material and the high-molecular light emitting material are used together, it is possible to obtain the synergistic effect resulting from the effect of the low-molecular light emitting material and the effect of the high-molecular light emitting material . That is, it is possible to obtain the effect that a dense light emitting layer 42 having excellent light emitting efficiency can be easily formed by means of various application methods such as the ink-jet method and the like.
- Examples of such a low-molecular light emitting material include: benzene-based compounds such as distyrylbenzene (DSB) , and diaminodis ' tyrylbenzene (DADSB) ; naphthalene-based compounds such as naphthalene and Nile red; phenanthrene-based compounds such as phenanthrene; chrysene-based compounds such as chrysene and 6-nitrochrysene; perylene-based compounds such as perylene and
- benzene-based compounds such as distyrylbenzene (DSB) , and diaminodis ' tyrylbenzene (DADSB)
- naphthalene-based compounds such as naphthalene and Nile red
- phenanthrene-based compounds such as phenanthrene
- chrysene-based compounds such as chrysene and 6-nitrochrysene
- BPPC 10-perylene-di-carboxy imide
- coronene-based compounds such as coronene
- anthracene-based compounds such as anthracene and bisstyrylanthracene
- pyrene-based compounds such as pyrene
- pyran-based compounds such as
- acridine-based compounds such as acridine
- stilbene-based compounds such as stilbene
- thiophene-based compounds such as 2, 5-dibenzooxazolethiophene
- benzooxazole-based compounds such as benzooxazole
- benzoimidazole-based compounds such as benzoimidazole
- benzothiazole-based compounds such as 2,2'- (para-phenylenedivinylene) -bisbenzothiazole
- butadiene-based compounds such as bistyryl (1, 4-diphenyl-l, 3-butadiene) and tetraphenylbutadiene
- naphthalimide-based compounds such as naphthalimide
- coumarin-based compounds such as coumarin
- perynone-based compounds such as perynone
- Examples of a high-molecular light emitting material include polyacetylene-based compounds such as trans-type polyacetylene, cis-type polyacetylene, poly (di-phenylacetylene) (PDPA), and poly(alkyl, phenylacetylene) (PAPA); polyparaphenylenevinylene-based compounds such as poly (para-phenylenevinylene) (PPV), poly (2, 5-dialkoxy-para-phenylenevinylene) (RO-PPV) , cyano-substituted-poly (para-phenylenevinylene) (CN-PPV) , poly (2-dimethyloctylsilyl-para-phenylenevinylene) (DMOS-PPV), and poly (2-methoxy-5- (2' -ethylhexoxy) -para-phenylenevinylene)_ (MEH-PPV) ; polythiophene-based compounds such as poly (3-alkylthiophen
- the conductive material according to the present invention can also be used as the light emitting material depending on the combination of constituent materials used for forming a hole transport layer 41 and an electron transport layer 43.
- poly (thiophene/styrenesulfonic acid) such as poly (3, 4-ethylenedioxythiophene/styrenesulfonic acid) or an arylamine compound such as
- N, N' -bis (1-naphthyl) -N, N' -diphenyl-benzidine ( ⁇ -NPD) is used as a constituent material of the hole transport layer 41 and a triazole-based compound such as 3, 4, 5-triphenyl-l, 2, 4-triazole or an oxadiazole compound such as 2- (4-t-butylphenyl) -5- (biphenyl-4-yl) -1, 3, 5-oxadiazole (PBD) is used as a constituent material of the electron transport layer 43, a polymer of the compound represented by the general formula (Al) in which the group Y has a chemical structure represented by the chemical formula (D12) or (D14) can be used as a conductive material for forming a light emitting layer 42.
- a triazole-based compound such as 3, 4, 5-triphenyl-l, 2, 4-triazole or an oxadiazole compound such as 2- (4-t-butylphenyl)
- the average thickness of the light emitting layer 42 is not limited to any specific value, but is preferably in the range of about 10 to 150 nm, and more preferably in the range of about 50 to 100 nm. By setting the thickness of the light emitting layer to a value within the above range, recombination of holes and electrons efficiently occurs, thereby enabling the light emitting efficiency of the light emitting layer 42 to be further improved.
- any one of the electron transport layer 41, the light emitting layer 42, and the electron transport layer 43 in the organic EL device 1 may be formed using the conductive material according to the present invention or all the layers 41, 42, and 43 may be formed using the conductive material according to the present invention.
- each of the light emitting layer 42, the hole transport layer 41, and the electron transport layer 43 is separately provided, they may be formed into a hole-transportable light emitting layer which combines the hole transport layer 41 with the light emitting layer 42 or an electron-transportable light emitting layer which combines the electron transport layer 43 with the light emitting layer 42.
- an area in the vicinity of the boundary between the hole-transportable light emitting layer and the electron transport layer 43 or an area in the vicinity of the boundary between the electron-transportable light emitting layer and the hole transport layer 41 functions as the light emitting layer 42.
- holes injected from an anode into the hole-transportable light emitting layer are trapped by the electron transport layer
- electrons injected from a cathode into the electron-transportable light emitting layer are trapped in the electron-transportable light emitting layer.
- any additional layer may be provided according to its purpose.
- a hole injecting layer for improving the injection efficiency of holes from the anode 3 may be provided between the hole transport layer 41 and the anode 3, or an electron injecting layer for improving the injection efficiency of electrons from the cathode 5 may be provided between the electron transport layer 43 and the cathode 5.
- the conductive material according to the present invention can be used as a constituent material of the hole injecting layer and/or the electron injecting layer.
- a constituent material of a hole injecting layer other than the conductive material according to the present invention for example, copper phthalocyanine, 4 , 4 ' , 4 ' ' -tris (N, N-phenyl-3-methylphenylamino) triphenylamine (M-MTDATA) , or the like can be used.
- the protection layer 6 is provided so as to cover the layers 3, 4 and 5 constituting the organic EL device 1.
- This protection layer 6 has the function of hermetically sealing the layers 3, 4 and 5 constituting the organic EL device 1 to shut off oxygen and moisture.
- Examples of a constituent material of the protection layer 6 include Al, Au, Cr, Nb, Ta and Ti, alloys containing them, silicon oxide, various resin materials, and the like.
- a conductive material is used as a constituent material of the protection layer 6, it is preferred that an insulating film is provided between the protection layer 6 and each of the layers 3, 4 and 5 to prevent a short circuit therebetween, if necessary.
- the organic EL device 1 can be used for a display, for example, but it can also be used for various optical purposes such as a light source and the like.
- the drive system thereof is not particularly limited, and either of an active matrix system or a passive matrix system may be employed.
- the organic EL device 1 as described above can be manufactured in the following manner, for example.
- a substrate 2 is prepared, and then an anode 3 is formed on the substrate 2.
- the anode 3 can be formed by, for example, chemical vapor deposition (CVD) such as plasma CVD, thermal CVD, and laser CVD, vacuum deposition, sputtering, dry plating such as ion plating, wet plating such as electrolytic plating, immersion plating, and electroless plating, thermal spraying, a sol-gel method, a MOD method, bonding of a metallic foil, or the like.
- CVD chemical vapor deposition
- thermal CVD thermal CVD
- laser CVD vacuum deposition
- vacuum deposition sputtering
- dry plating such as ion plating
- wet plating such as electrolytic plating, immersion plating, and electroless plating
- thermal spraying a sol-gel method, a MOD method, bonding of a metallic foil, or the like.
- a composition for conductive materials of the present invention (hereinafter, also referred to as a "hole transport material”) is applied or supplied onto the anode 3.
- the mixing ratio between the compound represented by the general formula (Al) and the vinyl compound in the composition for conductive materials is preferably 9: 1 to 3 : 2, and more preferably 4: 1 to 7 : 3, in terms of mole ratio. If the mixing ratio of the vinyl compound is too low, the interval between the main skeletons can not be maintained at a more suitable interval in a resultant polymer, and therefore there is a case that the main skeletons interact with each other. On the other hand, if the mixing ratio of the vinyl compound is too high, the mixing ratio of the compound represented by the general formula (Al) in the composition becomes relatively low. As a result, there is a case that the existing ratio of the main skeletons in a resultant polymer, and therefore the hole transport ability of the polymer is reduced.
- various application methods such as a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a wire-bar coating method, a dip coating method, a spray coating method, a screen printing method, a flexographic printing method, an offset printing method, an ink-jet method, and the like can be employed. According to such an application method, it is possible to relatively easily supply the hole transport material onto the anode 3.
- examples of such a solvent or dispersion medium include: inorganic solvents such as nitric acid, sulfuric acid, ammonia, hydrogen peroxide, water, carbon disulfide, carbon tetrachloride, and ethylene carbonate; and various organic solvents such as ketone-based solvents e.g., methyl ethyl ketone (MEK) , acetone, diethyl ketone, methyl isobutyl ketone (MIBK) , methyl isopropyl ketone (MIPK) , and cyclohexanone, alcohol-based solvents e.g., methanol, ethanol, isopropanol, ethylene glycol, diethylene glycol (DEG) , and glycerol, ether-based solvents e.g., diethyl ether, diisopropyl ether, 1, 2-dimethoxy
- the composition for conductive materials preferably contains a polymerization initiator.
- a polymerization initiator By adding a polymerization initiator to the composition for conductive materials, it is possible to promote direct polymerization of substituents X 1 or polymerization of substituents X 1 via the vinyl compound when predetermined treatment such as heating or light' irradiation is carried out in the next step [A2-2] .
- Examples of a polymerization initiator include, but are not limited thereto, photopolymerization initiators such as radical photopolymerization initiators and cationic photopolymerization initiators, heat polymerization initiators, and anaerobic polymerization initiators. Among them, cationic photopolymerization initiators are particularly preferably used. By using such a cationic photopolymerization initiator, it is possible to promote direct polymerization of substituents X 1 or polymerization of substituents X 1 via the vinyl compound in the next step [A2-2] relatively easily.
- photopolymerization initiators such as radical photopolymerization initiators and cationic photopolymerization initiators, heat polymerization initiators, and anaerobic polymerization initiators.
- cationic photopolymerization initiators are particularly preferably used.
- cationic photopolymerization initiator various cationic photopolymerization initiators can be used.
- cationic photopolymerization initiators include onium salt-based cationic photopolymerization initiators such as aromatic sulfouium salt-based cationic photopolymerization initiator, aromatic iodonium salt-based cationic photopolymerization initiator, aromatic diazonium cationic photopolymerization initiator, pyridium suit-based cationic photopolymerization initiator, and aromatic phosphonium salt-based cationic photopolymerization initiator.
- nonionic photopolymerization initiators such as iron arene complex and sulfonate ester may be used.
- a sensitizer suitable for the photopolymerization initiator may be added to the composition for conductive materials.
- the hole transport material supplied onto the anode 3 is irradiated with light.
- substituents X 1 of the compounds each represented by the general formula (Al) and contained in the hole transport material are polymerized directly or via the vinyl compound to obtain a polymer (that is, a conductive material according to the present invention) .
- a hole transport layer 41 mainly comprised of the conductive material according to the present invention is formed on the anode 3.
- a hole transport layer 41 By forming a hole transport layer 41 using the conductive material according to the present invention as its main material, it is possible to prevent the hole transport layer 41 from swelling and being dissolved due to a solvent or dispersion medium contained in a light emitting layer material to be supplied onto the hole transport layer 41 in the next step [A3] . As a result, mutual dissolution between the hole transport layer 41 and the light emitting layer 42 is reliably prevented.
- a hole transport layer 41 using the conductive material (that is, the polymer) according to the present invention as its main material, it is also possible to reliably prevent the mixing of the constituent materials of the hole transport layer 41 and the light emitting layer 42 from occurring near the boundary between these layers 41 and 42 in a resultant organic EL device 1 with the lapse of time.
- the conductive material that is, the polymer
- the weight-average molecular weight of the polymer is not particularly limited, but is preferably in the range of about 1,000 to 1,000,000, and more preferably in the range of about 10,000 to 300,000. By setting the weight-average molecular weight of the polymer to a value within the above range, it is possible to suppress or prevent the swelling and dissolution of the polymer more reliably.
- the hole transport layer 41 may contain a monomer or oligomer of the compound represented by the general formula (Al) and/or a monomer or oligomer of the vinyl compound to the extent that mutual dissolution between the hole transport layer 41 and the light emitting layer 42 can be prevented.
- the hole transport material for example, infrared rays, visible light, ultraviolet rays, or X-rays can be used. These types of light can be used singly or in combination of two or more of them. Among them, ultraviolet rays are particularly preferably used. By using ultraviolet rays, it is possible to easily and reliably polymerize the substituents X 1 directly or via the vinyl compound.
- the wavelength of ultraviolet rays to be used for light irradiation is preferably in the range of about 200 to 420 nm, and more preferably in the range ' of about 250 to 400 nm.
- the irradiation intensity of ultraviolet rays is preferably in the range of about 10 to 5,000 mW/cm 2 , and more preferably in the range of about 20 to 1,000 mW/cm 2 .
- the irradiation time of ultraviolet rays is preferably in the range of about 5 to 300 seconds, and more preferably in the range of about 10 to 150 seconds.
- each of the wavelength, irradiation intensity, and irradiation time of ultraviolet rays is set to a value within the above range, it is possible to relatively easily control the progress of polymerization reaction of the hole transport material supplied onto the anode 3.
- hole transport layer 41 may be also formed in the following process.
- the compound represented by the above-mentioned general formula (Al) (hereinafter, also referred to as a "compound (Al) ”) is added and solved to a reaction solvent which can dissolve the compound (Al) without or with the vinyl compound to obtain a composition for conductive materials.
- composition for conductive materials contains the vinyl compound in addition to the compound (Al)
- the same mixing ratio as that which has been mentioned above with reference to the step [A2-1] can be employed.
- reaction solvent the same solvent or dispersion medium as that which has been mentioned above with reference to the step [A2-1] can be used. It is to be noted that among the solvent or dispersion medium mentioned above, a, reaction solvent having a relatively weak-basicity is preferably selected.
- the examples of the reaction solvent having a relatively weak-basicity include aliphatic hydrocarbon-based solvents, aromatic hydrocarbon-based solvents, aromatic heterocyclic compound-based solvents, halogen compound-based solvents, and sulfur compound-based solvents.
- a solvent having a low-permittivity is particularly preferably selected.
- the solvent polymerization velocity of the compounds (Al) can be reduced.
- a polymer having a relatively low-molecular weight can be obtained easily. Therefore, a molecular weight of a resultant polymer of compound (Al) (polymeric substance) can be regulated relatively easily.
- the compounds (Al) contained in the composition for conductive materials are polymerized (bonded) directly or via the vinyl compound at the substituents X 1 .
- the polymerization reaction is carried out adequately to such as extent that a resultant polymer of compound (Al) (soluble polymer) does not separate out into the solvent.
- a weight-average molecular weight of such a polymer of compound (Al) slightly varies depending on the kind of the compounds (Al) , but is not particularly limited.
- the weight-average molecular weight of the polymer of compound (Al) is preferably in the range of about 800 to 10,000, and more preferably xn the range of about 1,500 to 5,000. This makes it possible to reliably prevent the polymer of compound (Al) from separating out (precipitating) into the composition for conductive materials by the insolubilization of the polymer of compound (Al) .
- the polymer of compound (Al) can be obtained by carrying out a predetermined process such as control of reaction temperature, light irradiation, and anaerobic process against the composition for conductive materials under the presence of the polymerization catalyst.
- direct polymerization or polymerization of the substituents X 1 of the compounds (Al) via the vinyl compound can be relatively easily controlled by appropriately setting the conditions of the predetermined process. Therefore, before an insoluble polymer is produced, that is, a resultant polymer becomes insolubilized due to excessive polymerization of the compounds (Al) , the polymerization reaction of the compounds (Al) can be stopped reliably.
- control of the reaction temperature is preferably selected as the predetermined process.
- the control of the reaction temperature By appropriately setting the process conditions for control of the reaction temperature, the polymerization reaction of the compounds (Al) can be stopped more easily.
- the temperature of the composition for conductive materials for control of the reaction temperature slightly varies depending on the kind of the above-mentioned reaction solvent, but is not particularly limited. However, the temperature of the composition for conductive materials for the control of the reaction temperature is preferably in the range of about -78 to 25 ° C, and more preferably in the range of about -40 to 0 ° C.
- the time for control of the reaction temperature slightly varies depending on the kind of the above-mentioned reaction solvent, but is not particularly limited. However, the time for control of the reaction temperature is preferably in the range of about 0.5 to 24 hours, and more preferably in the range of about 1 to 5 hours.
- each of the temperature of the composition for conductive materials and the time for control of the reaction temperature is set to a value within the above range, it is possible to prevent the insolubilization of the polymer of compound (Al) reliably.
- a polymerization terminator may be added to the composition for conductive materials. This makes it possible to stop polymerization of the compounds (Al) more reliably.
- Examples of such a polymerization terminator include lower alcohol containing a basic compound such as ammonia water, or ether-based solvent. It is to be noted that examples of the lower alcohol include methanol, ethanol and isopropyl alcohol, and examples of the ether-based solvent include diethyl ether and tetrahydrofuran.
- examples of the polymerization catalyst include, but not limited thereto, protonic acids such as halogenocarboxylic acid, sulfonic acid, sulfuric acid monoester, and phosphoric acid monoester; Lewis acids such as boron trifluoride, boron trifluoride/etherate (BF 3 /OEt 2 ) , titanium dichloride, titanium tetrachloride, stannous chloride, stannic chloride, aluminum chloride, zinc chloride, magnesium bromide, and ferric chloride.
- protonic acids such as halogenocarboxylic acid, sulfonic acid, sulfuric acid monoester, and phosphoric acid monoester
- Lewis acids such as boron trifluoride, boron trifluoride/etherate (BF 3 /OEt 2 ) , titanium dichloride, titanium tetrachloride, stannous chloride, stannic chloride, aluminum chloride, zinc chloride, magnesium bromide, and ferric chloride.
- examples of the compound having an unpaired electron include water, alcohol, carboxylic acid, and ether.
- the impurities include low-molecular compounds (monomer or oligomer) produced by polymerization of the compound (Al), low-molecular compounds (monomer or oligomer) produced by polymerization of the vinyl compound, the polymerization catalyst, the co-catalyst, a by-product produced during synthesizing the compound (Al) , and a substance mixed into a reacting system during synthesizing the compound (Al) .
- Such impurities are classified to a cationic impurity, an anionic impurity, or nonionic impurity.
- Examples of an elimination method of the cationic impurities or the anionic impurities include a filtration method, an adsorption chromatography method and an ion exchange chromatography method .
- the filtration method is preferably used. According to the ' filtration method, only by selecting the kind of filter to be used appropriately, target cationic impurities or target anionic impurities can be eliminated efficiently and reliably.
- a filter mainly composed of strongly acidic cation-exchange resin, weakly acidic cation-exchange resin, or chelating resin capable of selectively eliminating heavy metal cationic impurities can be eliminated effectively and reliably.
- anion-exchange resins such as strongest basic anion-exchange resin, strongly basic anion-exchange resin, medium anion-exchange resin, or weakly anion-exchange resin, anionic impurities can be eliminated effectively and reliably.
- an elimination method of the nonionic impurities examples include an ultrafiltration method and a gel permeation chromatography method.
- the ultrafiltration method is preferably used. Since an ultrafiltration membrane used in the ultrafiltration method has an excellent separation property for various substances according to molecular weights thereof, only by appropriately selecting the kind of an ultrafiltration membrane to be used, target nonionic impurities can be eliminated efficiently and reliably.
- composition for conductive materials containing the polymer of compound (Al) (soluble polymer) is applied (supplied) onto the anode 3.
- the composition for conductive materials preferably contains a polymerization initiator.
- a polymerization initiator By adding a polymerization initiator to the composition for conductive materials, it is possible to promote direct polymerization of substituents X 1 or polymerization of substituents X 1 via the vinyl compound when predetermined treatment such as heating and light irradiation is carried out in the next step [A2'-5].
- the same polymerization initiator as that which has been mentioned above with reference to the step [A2-1] can be used.
- the composition for conductive materials supplied onto the anode 3 is irradiated with light.
- substituents X 1 of polymers of compound (Al) contained in the composition for conductive materials are polymerized directly or via the vinyl compound.
- polymerization reaction of the polymers of compound (Al) is further progressed so that each of the polymers of compound (Al) is insolubilized, and therefore the insoluble polymers of compound (Al) are separated out into the composition for conductive materials. Therefore, a hole transport layer 41 mainly composed of the insoluble polymer of compound (Al) (insoluble polymer) , that is, a conductive material of the present invention is formed on the anode 3.
- a weight-average molecular weight of the insoluble polymer of compound (Al) (insoluble polymer) is not particularly limited, but is preferably in the range of about 15,000 to 1,000,000, and more preferably in the range of about 20,000 to 300,000. By setting the weight-average molecular weight to a value within the above range, it is possible to more reliably suppress or prevent the swelling and dissolution of the insoluble polymer of compound (Al) .
- the same light as that which has been mentioned above with reference to the step [A2-2] can be used.
- the hole transport layer 41 is formed through the above step [A2' ] .
- the composition for conductive materials to be applied onto the anode 3 in the step [A2' -5] contains the polymer of compound (Al) (soluble polymer), the amount of the polymerization initiator to be added to the composition for conductive materials can be relatively reduced.
- the amount of the polymerization initiator contained in a resultant hole transport layer 41 can be made lower than that of the polymerization initiator contained in the hole transport layer 41 formed through the above-mentioned step [A2]. Therefore, it is possible to prevent holes from being trapped by the polymerization initiator in the resultant hole transport layer 41, so that the resultant hole transport layer 41 can exhibit a higher carrier transport ability.
- the hole transport layer 41 is formed according to the method of the step [A2' ] , the soluble polymer of compound (Al) is applied onto the anode 3, and then polymerization reaction of the soluble polymer of compound (Al) is carried out, so that the soluble polymer of compound (Al) becomes insoluble. Therefore, according to the method of the step [A2' ] , the hole transport layer 41 can be formed relatively easily, and variation of molecular weight of the insoluble polymer of compound (Al) at each part of the resultant hole transport layer 41 can be reduced, so that the hole transport layer 41 having uniform properties (narrow distribution of molecular weight) can be obtained.
- the resultant hole transport layer 41 may be subjected to heat treatment in the atmosphere or an inert atmosphere or under reduced pressure (or under vacuum) when necessary. By doing so, it is possible to dry (that is, it is possible to remove a solvent or a dispersion medium) to solidify the hole transport layer 41.
- the hole transport layer 41 may be dried by means of a method other than heat treatment.
- predetermined treatment for polymerizing the substituents X 1 directly or via the vinyl compound other than light irradiation mentioned in the steps [A2-2] and [A2'-5] include heating and anaerobic treatment.
- light irradiation as described above is preferably employed. By employing light irradiation, it is possible to relatively easily select the area where polymerization reaction is carried out and the degree of polymerization.
- a light emitting layer 42 is formed on the hole transport layer 41.
- the light emitting layer 42 can be formed by, for example, applying onto the hole transport layer 41, a light emitting layer material (that is, a material for forming a light emitting layer) obtained by dissolving the light emitting material as described above in a solvent or dispersing the light emitting material in a dispersion medium.
- a light emitting layer material that is, a material for forming a light emitting layer
- solvents or dispersion media in which the light emitting material is to be dissolved or dispersed the same solvents or dispersion media as that which has been mentioned above with reference to the step of forming the hole transport layer [A2] can be used.
- the electron transport layer 43 can be formed using the composition for conductive materials according to the present invention in the same manner as that which has been described above with reference to the step of forming the hole transport layer [A2].
- the electron transport layer 43 can be formed using the known electron transport materials described above in the same manner as that which has been described above with reference to the step of forming the light emitting layer [A3] .
- a solvent or dispersion medium in which the composition for conductive materials for use in forming the electron transport layer 43 is to be dissolved or dispersed is selected from among those which do not cause swelling and dissolution of the light emitting layer 42.
- a cathode 5 is formed on the electron transport layer 43.
- the cathode 5 can be formed by, for example, vacuum deposition, sputtering, bonding of a metallic foil, or the like.
- a protection layer 6 is formed so as to cover the anode 3, the organic EL layer 4, and the cathode 5.
- the protection layer 6 can be formed or provided by, for example, bonding a box-like protection cover made of the material as mentioned above by the use of various curable resins (adhesives) .
- thermosetting resins As for such curable resins, all of thermosetting resins, photocurable resins, reactive curable resins, and anaerobic curable resins can be used.
- the organic EL device 1 is manufactured through these steps as described above. (Organic Thin Film Transistor)
- the electronic device of the present invention is embodied as an organic thin film transistor that is a switching element (hereinafter, simply referred to as an "organic TFT") .
- FIG. 2 (a) is a cross-sectional view of an organic TFT 10
- FIG. 2 (b) is a plan view of the organic TFT 10. It is to be noted that in the following description, the upper side and the lower side in FIG. 2 (a) will be referred to as “upper side” and “lower side”, respectively.
- the organic TFT 10 shown in FIG. 2 is provided on a substrate 20.
- a source electrode 30, a drain electrode 40, an organic semiconductor layer (that is, a conductive layer according to the present invention) 50, a gate insulating layer 60, and a gate electrode 70 are laminated in this order from the side of the substrate 20.
- the source electrode 30 and the drain electrode 40 are separately provided on the substrate 20, and the organic semiconductor layer 50 is provided so as to cover these electrodes 30 and 40.
- the gate insulating layer 60 is provided on the organic semiconductor layer 50.
- the gate electrode 70 is provided so as to overlap with at least a region between the source electrode 30 and the drain electrode 40.
- the region in the organic semiconductor layer 50 which is existed between the source electrode 30 and the drain electrode 40 functions as a channel region 510 where carriers are moved.
- channel length L the length of the channel region 510 in a direction that carriers are moved, that is, the distance between the source electrode 30 and the drain electrode 40
- channel width W the length of the channel region 51 " 0 in a direction orthogonal to the direction of the channel length L.
- the organic TFT 10 is an organic TFT having a structure in which the source electrode 30 and the drain electrode 40 are provided so as to be closer to the substrate 20 than the gate electrode 70 provided through the gate insulating layer 60. That is, the organic TFT 10 is an organic TFT having a top gate structure.
- the substrate 20 supports the layers (or the components) constituting the organic TFT 10.
- a substrate 20 for example, the same substrate as that which has been described above with reference to the substrate 2 of the organic EL device 1 can be used.
- a silicon substrate or a gallium arsenide substrate may be used as the substrate 20.
- the source electrode 30 and the drain electrode 40 are provided side by side at a predetermined distance in the direction of the channel length L.
- the constituent material of the source electrode 30 and the drain electrode 40 is not particularly limited so long as it has conductivity.
- examples of such a constituent material include metallic materials such as Pd, Pt, Au, W, Ta, Mo, Al, Cr, Ti, Cu, and alloys containing two or more of them, conductive oxide materials such as ITO, FTO, ATO, and SnO 2 , carbon materials such as carbon black, carbon nanotube, and fullerene, and conductive polymeric materials such as polyacetylene, polypyrrole, polythiophene e.g., PEDOT (poly-ethylenedioxythiophene) , polyaniline, poly (p-phenylene) , poly (p-phenylenevinylene) , polyfluorene, polycarbazole, polysilane, and derivatives thereof.
- metallic materials such as Pd, Pt, Au, W,
- the conductive polymeric materials are usually doped with iron chloride, iodine, strong acid, organic acid, or a polymer such as polystyrenesulfonic acid so as to have conductivity when used.
- These conductive materials can be used singly or in combination of two or more of them.
- each of the source electrode 30 and the drain electrode 40 is not particularly limited, but is preferably in the range of about 30 to 300 nm, and more preferably in the range of about 50 to 200 nm.
- the distance between the source electrode 30 and the drain electrode 40, that is, the channel length L is preferably in the range of about 2 to 30 ⁇ m, and more preferably in the range of about 2 to 20 ⁇ m.
- the channel width W is preferably in the range of about 0.1 to 5 mm, and more preferably in the range of about 0.3 to 3 mm.
- the organic semiconductor layer 50 is provided on the substrate 20 so as to cover the source electrode 30 and the drain electrode 40.
- the conductive material according to the present invention can be used as a constituent material of the organic semiconductor layer 50.
- the conductive material according to the present invention is useful for forming an organic semiconductor layer 50 because it is possible to impart good semiconductivity to the polymer by appropriately setting the chemical structure of the group Y.
- a polymer of the compound represented by the general formula (Al) in which the group Y has a chemical structure represented by the chemical formula (D2), (D3), (D16), (D17), or (D20) is preferably selected.
- the average thickness of the organic semiconductor layer 50 is preferably in the range of about 0.1 to 1,000 nm, more preferably in the range of about 1 to 500 nm, and even more preferably in the range of about 10 to 100 nm.
- the organic semiconductor layer 50 which is obtained by using a polymer such as the conductive material according to the present invention as its main material, it is possible to obtain an organic TFT 10 having reduced size and weight. In addition, it is also possible for the organic TFT 10 to have excellent flexibility. Such an organic TFT 10 is suitably used for a switching element of a flexible display provided with the organic EL devices described above.
- the organic semiconductor layer 50 is not limited to one provided so as to cover the source electrode 30 and the drain electrode 40.
- the organic semiconductor layer 50 should be provided in at least the region between the source electrode 30 and the drain electrode 40 (that is, in at least the channel region 510) .
- the gate insulating layer 60 is provided on the organic semiconductor layer 50.
- the gate insulating layer 60 is provided to insulate the gate electrode 70 from the source electrode 30 and the drain electrode 40.
- the gate insulating layer 60 is preferably formed using an organic material (especially, an organic polymeric material) as its main material. By using an organic polymeric material as a main material of the gate insulating layer 60, it is possible to form the gate insulating layer 60 easily as well as to bring the gate insulating layer 60 into closer contact with the organic semiconductor layer 50.
- organic polymeric material examples include polystyrene, polyimide, polyamideimide, polyvinylphenylene, polycarbonate (PC) , acrylic resins such as polymethylmethacrylate (PMMA) , fluorinated resins such as polytetrafluoroethylene (PTFE), phenolic resins such as polyvinyl phenol and novolac resins, and olefin-based resins such as polyethylene, polypropylene, polyisobutylene, and polybutene.
- acrylic resins such as polymethylmethacrylate (PMMA)
- fluorinated resins such as polytetrafluoroethylene (PTFE)
- phenolic resins such as polyvinyl phenol and novolac resins
- olefin-based resins such as polyethylene, polypropylene, polyisobutylene, and polybutene.
- the average thickness of the gate insulating layer 60 is not particularly limited, but is preferably in the range of about 10 to 5,000 nm, and more preferably in the range of about 100 to 1, 000 nm.
- the thickness of the gate insulating layer 60 is preferably in the range of about 10 to 5,000 nm, and more preferably in the range of about 100 to 1, 000 nm.
- the gate insulating layer 60 is not limited to one comprised of a single layer and may have two or more layers.
- the gate electrode 70 is provided on the gate insulating layer 60.
- constituent materials of the gate electrode 70 the same constituent materials as that which has been mentioned above with reference to the source electrode 30 and the drain electrode 40 can be used.
- the average thickness of the gate electrode 70 is not particularly limited, but is preferably in the range of about 0.1 to 5, 000 nm, more preferably in the range of about 1 to 5, 000 nm, and_even more preferably in the range of about 10 to 5,000 nm.
- the amount of current flowing between the source electrode 30 and the drain electrode 40 is controlled by changing voltage applied to the gate electrode 70.
- Such an organic TFT 10 as described above can be manufactured in the following manner, for example.
- FIGs. 3 and 4 are drawings (cross-sectional views) to be used for explaining a manufacturing method of the organic TFT 10 shown in FIG. 2. It is to be noted that, in the following description, the upper side and lower side in FIGs. 3 and 4 will be referred to as the “upper side” and the “lower side”, respectively.
- a substrate 20 as shown in FIG. 3 (a) is prepared.
- the substrate 20 is washed with, for example, water (e.g., pure water) and/or organic solvents .
- Water and organic solvents may be used singly or in combination of two or more of them.
- a photoresist is supplied onto the substrate 20 to form a film 80' (see FIG. 3 (b) ) .
- a photoresist to be supplied onto the substrate 20 either a negative-type photoresist or a positive-type photoresist may be used.
- the negative-type photoresist an area irradiated with light (that is, an area exposed to light) is cured and then an area other than the area exposed to light is dissolved by development to be removed.
- the positive-type photoresist an area exposed to light is dissolved by development to be removed.
- Examples of such a negative-type photoresist include water-soluble photoresists such as rosin-dichromate, polyvinyl alcohol (PVA) -dichromate, shellac-dichromate, casein-dichromate, PVA-diazo, and acrylic photoresists and oil-soluble photoresists such as polyvinyl cinnamate, cyclized rubber-azide, polyvinyl cinnamylidene acetate, and polycinnamic acid ⁇ -vinyloxyethyl ester.
- water-soluble photoresists such as rosin-dichromate, polyvinyl alcohol (PVA) -dichromate, shellac-dichromate, casein-dichromate, PVA-diazo, and acrylic photoresists and oil-soluble photoresists such as polyvinyl cinnamate, cyclized rubber-azide, polyvinyl cinnam
- Examples of a positive-type photoresist include oil-soluble photoresists such as o-naphthoquinonediazide .
- Any method can be used for "supplying a photoresist onto the substrate 20, but various application methods are preferably employed.
- the film 80' is exposed to light through a photomask and is then developed to form a resist layer 80 having openings 820 where a source electrode 30 and a drain electrode 40 are to be formed (see FIG. 3(C)).
- a predetermined amount of a liquid material 90 containing a constituent material of a source electrode 30 and a drain electrode 40 to be formed or a precursor thereof is supplied to the openings 820 provided on the substrate 20.
- solvent ' s or dispersion media in which a constituent material of a source electrode 30 and a drain electrode 40 or a precursor thereof is dissolved or dispersed for preparing a liquid material 90 the same solvents or dispersion media as that which has been mentioned above with reference to the step of forming hole transport layer [A2] can be used.
- an inkjet method that is, a liquid droplet ejecting method
- adhesion of the liquid material 90 to the resist layer 80 is reliably prevented.
- the solvent or dispersion medium contained in the liquid material 90 supplied to the openings 820 is removed to form a source electrode 30 and a drain electrode 40.
- the temperature at which the solvent or dispersion medium is removed is not particularly limited, and slightly varies depending on the kind of solvent or dispersion medium used. However, the temperature at which the solvent or dispersion medium is removed is preferably in the range of about 20 to 200°C, and more preferably in the range ' of about 50 to 100 0 C. By removing the solvent or dispersion medium at a temperature within the above' range, it is possible to reliably remove the solvent or dispersion medium from the liquid material 90.
- the solvent or dispersion medium contained in the liquid material 90 may be removed by heating under reduced pressure. By doing so, it is possible to more reliably remove the solvent or dispersion medium from the liquid material 90.
- the resist layer 80 provided on the substrate 20 is removed to obtain the substrate 20 on which the source electrode 30 and the drain electrode 40 are formed (see FIG. 4(a)) .
- a method for removing the resist layer 80 is appropriately selected depending on the kind of resist layer 80.
- ashing such as plasma treatment or ozone treatment, irradiation with ultraviolet rays, or irradiation with a laser such as a Ne-He laser, an Ar laser, a CO 2 laser, a ruby laser, a semiconductor laser, a YAG laser, a glass laser, a YVO 4 laser, or an excimer laser may be carried out.
- the resist layer 80 may removed by being brought into contact with a solvent capable of dissolving or decomposing the resist layer 80 by, for example, immersing the resist layer 80 in such a solvent .
- a channel region 510 is formed between the source electrode 30 and the drain electrode 40 (that is, in an area corresponding to an area where a gate electrode 70 is to be formed) .
- the organic semiconductor layer 50 can be formed using the composition for conductive materials according to the present invention by the same method as that which has been described above with reference to the step of forming the hole transport layer [A2] and [A2' ] in the manufacturing method of the organic EL device 1.
- the organic semiconductor layer 50 is formed using the conductive material (that is, the polymer) according to the present invention as its main material . Therefore, when a gate insulating layer material is supplied onto the organic semiconductor layer 50 in the next step [B3] , swelling and dissolution of the polymer due to a solvent or dispersion medium contained in the gate insulating layer material is properly inhibited or prevented. As a result, mutual dissolution between the organic semiconductor layer 50 and a gate insulating layer 60 is reliably prevented.
- the conductive material that is, the polymer
- an organic semiconductor layer 50 By forming an organic semiconductor layer 50 using a polymer such as the conductive material according to the present invention as its main material, it is possible to reliably prevent the mixing of the constituent materials of the organic semiconductor la'yer 50 and the gate insulating layer 60 from occurring near 1 the boundary between these layers 50 and 60 with the lapse of time.
- a gate insulating layer 60 is formed on the organic semiconductor layer 50 by an application method.
- the gate insulating layer 60 can be formed by applying or supplying a solution containing an insulating material or a precursor thereof onto the organic semiconductor layer 50 by the application method described above.
- the thus obtained layer is subjected to aftertreatment such as heating, irradiation with infrared rays, or exposure to ultrasound.
- a gate electrode 70 is formed on the gate insulating layer 60 by an application method.
- the gate electrode 70 can be formed by applying or supplying a solution containing an electrode material or a precursor thereof onto the gate insulating layer 60 by the application method.
- the thus obtained layer is subjected to aftertreatment such as heating, irradiation with infrared rays, or exposure to ultrasound.
- an inkjet method is preferably employed.
- the inkjet method it is possible to eject a solution containing an electrode material or a precursor thereof in the form of liquid droplets from a nozzle of a liquid droplet ejecting head to carry out patterning.
- a gate electrode 70 having a predetermined shape is easily and reliably formed on the gate insulating layer 60.
- the organic TFT 10 is manufactured through the steps described above.
- the electronic devices according to the present invention such as the organic EL device (which is a light emitting device) 1 and the organic TFT (which is a switching element) 10 as described above can be used for various electronic equipment.
- FIG. 5 is a perspective view which shows the structure of a personal mobile computer (or a personal notebook computer) to which the electronic equipment according to the present invention is applied.
- a personal computer 1100 is comprised of a main body 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display.
- the display unit 1106 is rotatably supported by the main body 1104 via a hinge structure.
- the display unit 1106 includes the organic EL device (which is a light emitting device) 1 and the organic TFT (which is a switching element) 10 described above.
- FIG. 6 is a perspective view which shows the structure of a mobile phone (including the personal handyphone system (PHS)) to which the electronic equipment according to the present invention is applied.
- PHS personal handyphone system
- the mobile phone 1200 shown in FIG. 6 includes a plurality of operation buttons 1202, an earpiece 1204, a mouthpiece 1206, and a display.
- the display includes the organic EL device (which is a light emitting device) 1 and the organic TFT (which is a switching element) 10 described above.
- FIG. 7 is a perspective view which shows the structure of a digital still camera to which the electronic equipment according to the present invention is applied. In this drawing, interfacing to external devices is simply illustrated.
- an image pickup device such as a CCD (Charge Coupled Device) generates an image pickup signal (or an image signal) by photoelectric conversion of the optical image of an object.
- CCD Charge Coupled Device
- a display which provides an image based on the image pickup signal generated by the CCD. That is, the display functions as a finder which displays the object as an electronic image.
- the display includes the organic EL device (which is a light emitting device) 1 and the organic TFT (which is a switching element) 10 described above.
- the circuit board 1308 has a memory capable of storing an image pickup signal.
- a light receiving unit 1304 including an optical lens (an image pickup optical system) and a CCD.
- an image pickup signal generated by the CCD at that time is transferred to the memory in the circuit board 1308 and then stored therein.
- a video signal output terminal 1312 and an input-output terminal for data communication 1314 are provided in the side surface of the case 1302 of the digital still camera 1300.
- a television monitor 1430 and a personal computer 1440 are connected to the video signal output terminal 1312 and the input-output terminal for data communication 1314, respectively. Ih this case, an image pickup signal stored in the memory of the circuit board 1308 is outputted to the television monitor 1430 or the personal computer 1440 by carrying out predetermined operation.
- the electronic equipment according to the present invention can be applied not only to the personal computer (which is a personal mobile computer) shown in FIG. 5, the mobile phone shown in FIG. 6, and the digital still camera shown in FIG. 7 but also to a television set, a video camera, a view-finer or monitor type of video tape recorder, a laptop-type personal computer, a car navigation device, a pager, an electronic notepad (which may have communication facility) , an electronic dictionary, an electronic calculator, a computerized game machine, a word processor, a workstation, a videophone, a security television monitor, an electronic binocular, a POS terminal, an apparatus provided with a touch panel (e.g., a cash dispenser located on a financial institute, a ticket vending machine), medical equipment (e.g., an electronic thermometer, a sphygmomanometer, a blood glucose meter, an electrocardiograph monitor, ultrasonic diagnostic equipment, an endoscope monitor) , a fish detector, various measuring instruments, gages (e
- composition for conductive materials, the conductive material, the conductive layer, the electronic device, and the electronic equipment according to the present invention have been described based on the embodiments shown in the drawings, but the present invention is not limited thereto.
- the electronic device according to the present invention has a hole transport layer as a conductive layer
- such an electronic device can be used for, for example, a solar cell that is an example of light receiving devices (or photoelectric transducers) as well as the organic EL device as described above that is an example of display devices (or light emitting devices) .
- the electronic device according to the present invention has an organic semiconductor layer as a conductive layer
- such an electronic device can be used for, for example, a semiconductor device as well as the organic TFT as described above that is an example of switching elements .
- the conductive layer according to the present invention can be used as, for example, wiring or an electrode as well as the hole transport layer as described above.
- a resultant electronic device according to the present invention can be used for a wiring board and the like. Examples
- the thus obtained compound was confirmed to be the following compound (AI) by means of a mass spectrum (MS) method, a 1 H-nuclear magnetic resonance ( 1 H-NMR) spectrum method, a 13 C-nuclear magnetic resonance ( 13 C-NMR) spectrum method, and a Fourier transform infrared absorption (FT-IR) spectrum method.
- MS mass spectrum
- 1 H-NMR 1 H-nuclear magnetic resonance
- 13 C-NMR 13 C-nuclear magnetic resonance
- FT-IR Fourier transform infrared absorption
- a compound (BI) was obtained in the same manner as the compound (AI) except that l-bromo-4-butylbenzene was changed to l-bromo-3,-5-dimethyl-4-butylbenzene .
- a compound (CI) was obtained in the same manner as the compound (AI) except that 4- (p-aminophenyl) butanol was changed to 7- (p-aminophenyl) heptanol and l-bromo-4-butylbenzene was changed to l-bromo-4-heptylbenzene, respectively.
- a compound (DI) was obtained in the same manner as the compound (AI) except that 4- (p-aminophenyl) butanol was changed to 2- (p-aminophenyl) ethanol and l-bromo-4-butylbenzene was changed to l-bromo-4-ethylbenzene, respectively.
- a compound (EI) was obtained in the same manner as the compound (DI) except that 4 , 4' -diiodobiphenyl was changed to 4,4' -diiodo-2 , 2 ' -dimethylbiphenyl .
- a compound (FI) was obtained in the same manner as the compound (AI) except that 4- (p-aminophenyl) butanol was changed to 8- (p-aminophenyl) octanol and l-bromo-4-buthylbenzene was changed to l-bromo-4-octylbenzene, respectively.
- a compound (GI) was obtained in the same manner as the compound (AI) except that 4- (p-aminophenyl) butanol was changed to 1- (p-aminophenyl) methanol and l-bromo-4-butylbenzene was changed to 4-bromotoluene, respectively.
- a compound (All) was obtained in the same manner as the compound (AI) except that 4 , 4' -diiodobiphenyl was changed to 2, 5-bis (4-iodophenyl) -thiophene .
- a compound (CII) was obtained in the same manner as the compound (All) except that 4- (p-aminophenyl) butanol was changed to 7- (p-aminophenyl) heptanol and l-bromo-4-butylbenzene was changed to l-bromo-4-heptylbenzene, respectively.
- a compound (DII) was obtained in the same manner as the compound (All) except that 4- (p-aminophenyl) butanol was changed to 2- (p-aminophenyl) ethanol and l-bromo-4-butylbenzene was changed to l-bromo-4-ethylbenzene, respectively.
- a compound (EII) was obtained in the same manner as the compound (DII) except that 2, 5-bis (4-iodophenyl) -thiophene was changed to 2, 5-bis (2-methyl-4-iodophenyl) -thiophene .
- a compound (FII) was obtained in the same manner as the compound (All) except that 4- (p-aminophenyl) butanol was changed to 8- (p-aminophenyl) octanol and l-bromo-4-butylbenzene was changed to l-bromo-4-octylbenzene, respectively.
- a compound (GII) was obtained in the same manner as the compound (All) except that 4- (p-aminophenyl) butanol was changed to 1- (p-aminophenyl) methanol and l-bromo-4-butylbenzene was changed to 4-bromotoluene, respectively.
- a compound (JII) was obtained in the same manner as the compound (All) except that 2, 5-bis (4-iodophenyl) -thiophene was changed to 2, 5- (4-iodophenyl) -1, 3, 4-oxadiazole.
- a compound (LII) was obtained in the same manner as the compound (KII) except that 4- (p-aminophenyl) butanol was changed to 7- (p-aminophenyl) heptanol and l-bromo-4-butylbenzene was changed to l-bromo-4-heptylbenzene, respectively.
- a compound (Mil) was obtained in the same manner as the compound (KII) except that 4- (p-aminophenyl) butanol was changed to 2- (p-aminophenyl) ethanol and l-bromo-4-butylbenzene was changed to l-bromo-4-etylbenzene, respectively.
- a compound (Nil) was obtained in the same manner as the compound (KII) except that 4- (p-aminophenyl) butanol was changed to 8- (p-aminophenyl) octanol and l-bromo-4-butylbenzene was changed to l-bromo-4-octylbenzene, respectively.
- a compound (Oil) was obtained in the same manner as the compound (KII) except that 4- (p-aminophenyl) butanol was changed to 1- (p-aminophenyl) methanol and l-bromo-4-butylbenzene was changed to 4-bromotoluene, respectively.
- a compound (PII) was obtained in the same manner as the compound (All) except that 2, 5-bis (4-iodophenyl) -thiophene was changed to
- Poly (3, 4-ethylenedioxythiophene/styrenesulfonic acid) (“BAYTRON P CH800", Bayer) was prepared as the following compound (TII) .
- a compound (UII) was obtained in the same manner as the compound (SII) except that 2, 5-bis (4-iodophenyl) -thiophene was changed to 3, 5-diiodo-l, 2, 4-triazole .
- the compound (AI) was used as an arylamine derivative, and the compound (AI) and a cationic photopolymerization initiator ("FC-508" produced by Sumitomo 3M Limited) in a weight ratio of 99:1 were mixed with dichloroethane to obtain a hole transport material (that is, a composition for conductive materials) .
- an ITO electrode that is, an anode
- a transparent glass substrate having an average thickness of 0.5 mm by vacuum evaporation so as to have an average thickness of 100 nm.
- the hole transport material was applied onto the ITO electrode by a spin coating method, and was then dried. Then, the hole transport material was irradiated with ultraviolet rays having a wavelength of 365 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 500 mW/cm 2 for 15 seconds in the dry atmosphere and then heated for 60 minutes at temperature of 110 0 C to polymerize the compound (AI), so that a hole transport layer having an average thickness of 50 nm was formed.
- UM-452 ultraviolet rays having a wavelength of 365 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 500 mW/cm 2 for 15 seconds in the dry atmosphere and then heated for 60 minutes at temperature of 110 0 C to polymerize the compound (AI), so that a hole transport layer having an average thickness of 50 nm was formed.
- an electron transport layer having an average thickness of 20 nm was formed on the light emitting layer by a vacuum evaporation of 3, 4 , 5-triphenyl-l, 2, 4-triazole .
- an AlLi electrode that is, a cathode
- an AlLi electrode that is, a cathode
- a protection cover made of polycarbonate was provided so as to cover these layers described above, and was then secured and sealed with an ultraviolet curable resin to obtain an organic EL device.
- Example 2A to 6A organic EL devices were manufactured after a hole transport material was prepared in the same manner as in Example IA except that the arylamine derivatives for use in the hole transport material were changed to those shown in Table 1.
- a hole transport material was obtained by dissolving the compound (HI) in dichloroethane .
- Organic EL devices were manufactured in the same manner as in Example IA except that the hole transport material prepared in this Comparative Example was used and the irradiation of ultraviolet rays from the mercury lamp was omitted in the step 2A.
- the compound (TII) was dispersed in water to prepare a
- Organic EL devices were manufactured in the same manner as in Comparative Example IA except that the hole transport material was changed to the hole transport material prepared in this Comparative Example 2A.
- the compound (HI) was used as an arylamine derivative, and a bifunctional epoxy compound ("DENACOL EX-212" produced by Nagase chemteX Corporation) was used as a photocrosslinking agent, and the compound (HI) , the epoxy compound and a cationic photopolymerization initiator ("FC-508" produced by Sumitomo 3M Limited) in a weight ratio of 50:49:1 were mixed with dichloroethane to obtain a hole transport material.
- a bifunctional epoxy compound (“DENACOL EX-212" produced by Nagase chemteX Corporation) was used as a photocrosslinking agent
- FC-508 cationic photopolymerization initiator
- Organic EL devices were manufactured in the same manner as in Example IA except that the hole transport material was changed to the hole transport material prepared in this Comparative Example 3A.
- Organic EL devices were manufactured after a hole transport material was prepared in the same manner as in Example IA except that the compound (GI) was used as an arylamine derivative.
- the compound (AI) was used as an arylamine derivative, a polyethylene glycol diacrylate represented by the above-mentioned general formula (Bl) (wherein n 2 is 9, and two A 1 S are a hydrogen atom) was used as a vinyl compound, and a cationic photopolymerization initiator ("FC-508" produced by- Sumitomo 3M Limited) was used as a photopolymerization initiator, and then they were dissolved with dichloroethane to obtain a hole transport material (that is, a composition for conductive materials).
- a hole transport material that is, a composition for conductive materials.
- the mixing ratio of the compound (AI) and the polyethylene glycol diacrylate was 3:1 in a mole ratio, and the weight ratio of the total weight of the compound (AI) and the polyethylene glycol diacrylate with respect to the cationic photopolymerization initiator was 99:1.
- an ITO electrode that is, an anode
- a transparent glass substrate having an average thickness of 100 nm in the same manner as the step IA described above .
- the prepared hole transport material was applied onto the ITO electrode by a spin coating method, and was then dried.
- the hole transport material was irradiated with ultraviolet rays having a wavelength of 365 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 400 mW/cm 2 for 10 seconds in the dry atmosphere and then heated for 60 minutes at temperature of 110 0 C to polymerize the compound (AI) and the polyethylene glycol diacrylate, so that a hole transport layer having an average thickness of 50 nm was formed.
- UM-452 ultraviolet rays having a wavelength of 365 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 400 mW/cm 2 for 10 seconds in the dry atmosphere and then heated for 60 minutes at temperature of 110 0 C to polymerize the compound (AI) and the polyethylene glycol diacrylate, so that a hole transport layer having an average thickness of 50 nm was formed.
- a light emitting layer having an average thickness of 50 nm was formed on the hole transport layer in the same manner as the step 3A described above.
- an AlLi electrode that is, a cathode having an average thickness of 300 nm was formed on the electron transport layer in the same manner as the step 5A described above.
- a protection cover made of polycarbonate was provided so as to cover these layers described above, and was then secured and sealed in the same manner as the step 6A described above to obtain an organic EL device.
- Organic EL devices were manufactured after a hole transport material was prepared in the same manner as in Comparative Example IB except that the compound (AI) was used as an arylamine derivative.
- An electron transport material (that is, a composition for conductive materials) was obtained in the same manner as the hole transport material prepared in this example except that the compound (III) was used as an arylamine derivative.
- an ITO electrode that is, an anode
- a transparent glass substrate having an average thickness of 100 nm in the same manner as the step IA described above .
- the prepared hole transport material was applied onto the ITO electrode by a spin coating method, and was then dried. Then, the hole transport material was irradiated with ultraviolet rays having a wavelength of 365 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 500mW/cm 2 for 15 seconds in dry atmosphere and then heated for 60 minutes at temperature of 110 0 C to polymerize the compound (All), so that a hole transport layer having an average thickness of 50 nm was formed.
- UM-452 ultraviolet rays having a wavelength of 365 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 500mW/cm 2 for 15 seconds in dry atmosphere and then heated for 60 minutes at temperature of 110 0 C to polymerize the compound (All), so that a hole transport layer having an average thickness of 50 nm was formed.
- a light emitting layer having an average thickness of 50 nm was formed on the hole transport layer in the same manner as the step 3A described above.
- an electron transport layer having an average thickness of 20 nm was formed on the light emitting layer by the polymerization of the compound (III) in the same manner as the step 2C described above except that the prepared electron transport material was used instead of the hole transport material .
- an AlLi electrode that is, a cathode having an average thickness of 300 nm was formed on the electron transport layer in the same manner as the step 5A described above .
- organic EL devices were manufactured after a hole transport material and an electron transport material were prepared in the same manner as in Example 1C except that as for the arylamine derivatives for use in the hole transport material and the electron transport material, those shown in Table 3 were used, respectively.
- a hole transport material was obtained by dissolving the compound (SII) in xylene.
- Organic EL devices were manufactured in the same manner as in Example 1C except that a hole transport layer was formed using the prepared hole transport material but omitting the irradiation of ultraviolet rays at the step 2C and that an electron transport layer was formed using the compound (UII) by vacuum evaporation at the step 4C.
- a hole transport layer was formed using the prepared hole transport material but omitting the irradiation of ultraviolet rays at the step 2C and that an electron transport layer was formed using the compound (UII) by vacuum evaporation at the step 4C.
- Organic EL devices were manufactured in the same manner as in Comparative Example 1C except that the hole transport material was changed to the hole transport material prepared in this Comparative Example.
- the compound (SII) was used as an arylamine derivative, and a bifunctional epoxy compound ("DENACOL EX-212" produced by Nagase chemteX Corporation) was used as a photocrosslinking agent, and the compound (SII) , the epoxy compound and a cationic photopolymerization initiator ("FC-508" produced by Sumitomo 3M Limited) in a weight ratio of 50:49:1 were mixed with dichloroethane to obtain a hole transport material.
- a bifunctional epoxy compound (“DENACOL EX-212" produced by Nagase chemteX Corporation) was used as a photocrosslinking agent
- FC-508 cationic photopolymerization initiator
- Organic EL devices were manufactured in the same manner as in Example 1C except that the hole transport material prepared in the this Comparative Example was used as a hole transport material and that an electron transport layer was formed using the compound (UII) by vacuum evaporation in the step 4C.
- the hole transport material prepared in the this Comparative Example was used as a hole transport material and that an electron transport layer was formed using the compound (UII) by vacuum evaporation in the step 4C.
- Organic EL devices were manufactured after a hole transport material was prepared in the same manner as in Comparative Example 3C except that the compound (GII) was used as an arylamine derivative for use in the hole transport material .
- the compound (All) was used as an arylamine derivative, a polyethylene glycol diacrylate represented by the above-mentioned general formula (Bl) (wherein n 2 is 9, and two A 1 S are a hydrogen atom) was used as a vinyl compound and a cationic photopo ' lymerization initiator ("FC-508" produced by Sumitomo 3M Limited) was used as a photopolimerization initiator, respectively, and then they were mixed with dichloroethane to obtain a hole transport material (that is, a composition for conductive materials).
- a hole transport material that is, a composition for conductive materials.
- the mixing ratio of the compound (All) and the polyethylene glycol diacrylate was 3:1 in a mole ratio, and the weight ratio of the total weight of the compound (All) and the polyethylene glycol diacrylate with respect to the cationic photopolymerization initiator was 99:1.
- An electron transport material (that is, a composition for conductive materials) was obtained in the same manner as the hole transport material prepared in this Example except that the compound (III) was used as an arylamine derivative.
- an ITO electrode that is, an anode having an average thickness of 100 nm was formed on a transparent glass substrate in the same manner as the step IA described above.
- the hole transport material was applied onto the ITO electrode by a spin coating method, and was then dried.
- the hole transport material was irradiated with ultraviolet rays having a wavelength of 365 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 400 mW/cm 2 for 10 seconds in dry atmosphere and then heated for 60 minutes at temperature of 110 0 C to polymerize the compound (All) and the polyethylene glycol diacrylate, so that a hole transport layer having an average thickness of 50 nm was formed.
- UM-452 ultraviolet rays having a wavelength of 365 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 400 mW/cm 2 for 10 seconds in dry atmosphere and then heated for 60 minutes at temperature of 110 0 C to polymerize the compound (All) and the polyethylene glycol diacrylate, so that a hole transport layer having an average thickness of 50 nm was formed.
- a light emitting layer having an average thickness of 50 nm was formed on the hole transport layer in the same manner as the step 3A described above.
- an electron transport layer having an average thickness of 20 nm was formed on the light emitting layer by polymerizing the compound (III) and the polyethylene glycol diacrylate in the same manner as the step 2D described above except that the electron transport material prepared in this Example was used instead of the hole transport material.
- an AlLi electrode that is, a cathode
- a protection cover made of polycarbonate was provided so as to cover these layers described above, and was then secured and sealed with an ultraviolet curable resin to obtain an organic EL device.
- Organic EL devices were manufactured after a hole transport material and an electron transport material were prepared in the same manner as in Example ID except that the addition of the polyethylene glycol diacrylate to the hole transport material and the electron transport material were omitted.
- Example 2D' to 14D' organic EL devices were manufactured after a hole transport material and an electron transport material were prepared in the same manner as in Example ID' except that as for the arylamine derivatives for use in the hole transport material and the electron transport material, those shown in Table 4 (B) were used, respectively.
- the luminous brightness (cd/m 2 ) , the maximum luminous efficiency (lm/W) , and the time that elapsed before the luminous brightness became half of the initial value (that is, a half-life) of each of the organic EL devices obtained in Examples and Comparative Examples mentioned above were measured. Based on the measurement values for the five organic EL devices, an average was calculated.
- the luminous brightness was measured by applying a voltage of 6V across the ITO electrode and the AlLi electrode.
- the measurement values (that is, the luminous brightness, the maximum luminous efficiency, and the half-life) of each of the Examples IA to 6A and the Comparative Examples 2A to 4A were evaluated based on the measurement values of the Comparative Example IA according to the following four criteria, respectively.
- the organic EL devices of the Examples which were formed of the compositions each having the adjacent main skeletons which are allowed to exist at a more suitable interval, the luminous brightness and the maximum luminous efficiency were further improved and the half-life was also further prolonged.
- the measurement values (that is, the luminous brightness, the maximum luminous efficiency, and the half-life) of each of the Examples IB to 1OB, the Examples IB' to 6B' and the Comparative Examples 2B to 5B were evaluated based on the measurement values of the Comparative Example IB according to the following four criteria, respectively.
- each of the organic EL devices of the Examples IB to 1OB shows a tendency that the maximum luminous efficiency- was improved as compared to the organic EL devices of the Examples IB' to 6B' .
- Such a result suggests that in the organic EL devices of the Examples IB to 1OB the interval between the adjacent main skeletons could be maintained at a more suitable distance due to the addition of the vinyl compound.
- the organic EL devices of the Examples IB, 2B, and 3B which were formed from the hole transport material in which the compound represented by the above-mentioned general formula (Al) and the vinyl compound were mixed with a particularly preferable mixing ratio show a tendency that the half-life was prolonged as compared to the organic EL devices of the Examples 4B and 5B.
- compositions of the Examples which were formed of the compounds containing the substituents X 1 each having an appropriate n 1 value in the general formula (A2) that is the compositions formed of the compounds containing the substituents X 1 by which the adjacent main skeletons are allowed to exist at a suitable interval, could have more superior luminous brightness, maximum luminous efficiency, and half-life as compared to the compositions which do not have such a substituent X 1 .
- the measurement values (that is, the luminous brightness, the maximum luminous efficiency, and the half-life) of each of the Examples 1C to 14C and the Comparative Examples 2C to 4C were evaluated based on the measurement values of the Comparative Example 1C according to the following four criteria, respectively.
- compositions of the Examples which were formed of the compounds containing the substituents X 1 each having an appropriate n 1 value in the general formula (A2) that is the compositions which were formed of the compounds containing the substituents X 1 by which the adjacent main skeletons are allowed to exist at a suitable interval, could have more superior luminous brightness, maximum luminous efficiency, and half-life as compared with the compositions which do not have such a substituent X 1 .
- the organic EL devices in the Examples each obtained by appropriately selecting conductive materials for respectively constituting the hole transport material and the electron transport material namely, the organic EL devices in the Examples each having a preferred combination of the hole transport layer and the electron transport layer by appropriately selecting the group Y of the compound represented by the above-mentioned general formula (Al) could have superior luminous brightness, maximum luminous efficiency, and half-life.
- the measurement values (that is, the luminous brightness, the maximum luminous efficiency, and the half-life) of each of the Examples ID to 18D, the Examples ID' to 14D' and the Comparative Examples 2D to 4D were evaluated based on the measurement values of the Comparative Example ID according to the following four criteria, respectively.
- A The measurement value was 1.5 times or more that of Comparative Example ID.
- B The measurement value was 1.25 times or more but less than 1.5 times that of Comparative Example ID.
- each of the organic EL devices of the Examples ID to 18D shows a tendency that the maximum luminous efficiency was improved as compared to the organic EL devices of the Examples ID' to 14D' .
- Such a tendency was recognized more conspicuously as the organic EL devices which were formed of the hole transport materials and the electron transport materials each having a particularly preferable mixing ratio of the compound represented by the general formula (Al) and the vinyl compound. This result suggests that the interval between the adjacent main skeletons could be maintained at a more suitable interval due to the addition of the vinyl compound.
- compositions of the Examples which contain substituents X 1 each having an appropriate n 1 value in the general formula (A2) that is the compositions containing the substituents X 1 by which the adjacent main skeletons are allowed to exist at a suitable interval, could have more superior luminous brightness, maximum luminous efficiency, and half-life as compared to the compositions which do not have such a substituent X 1 .
- the organic EL devices in the Examples each obtained by appropriately selecting conductive materials for respectively constituting the hole transport material and the electron transport material namely, the organic EL devices in the Examples each having a preferred combination of the hole transport layer and the electron transport layer by appropriately selecting the group Y of the compound represented by the above-mentioned general formula (Al) could have superior luminous brightness, maximum luminous efficiency, and half-life.
- the compound (KII) was used as an arylamine derivative, and the compound (KII) and a cationic photopolymerization initiator ("FC-508" produced by Sumitomo 3M Limited) in a weight ratio of 99:1 were mixed with dichloroethane to obtain an organic semiconductor material (that is, a composition for conductive materials) .
- a glass substrate having an average thickness of 1 mm was prepared, and it was then washed with water (that is, with a cleaning fluid) .
- a photoresist was applied onto the glass substrate by a spin coating method, and then the photoresist was prebaked to form a film.
- the film was irradiated with (or exposed to) ultraviolet rays through a photomask to develop it. In this way, a resist layer having openings where a source electrode and a drain electrode were to be provided was formed.
- an aqueous gold colloidal solution was supplied to the openings by an inkjet method. Then, the glass substrate to which the aqueous gold colloidal solution had been supplied was dried by heating to obtain a source electrode and a drain electrode.
- the resist layer was removed by oxygen plasma treatment. Then, the glass substrate on which the source electrode and the drain electrode had been formed was washed with water, and was then washed with methanol.
- the prepared organic semiconductor material was applied onto the substrate by a spin,coating method and then it was dried.
- the organic semiconductor material was irradiated with ultraviolet rays having a wavelength of 365 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 500 mW/cm 2 for 15 seconds in dry atmosphere to polymerize the compound (KII) and then heated for 60 minutes at temperature of 110 0 C, so that an organic semiconductor layer having an average thickness of 50 nm was formed on the glass substrate.
- a butyl acetate solution of polymethylmethacrylate (PMMA) was applied onto the organic semiconductor layer by a spin coating method, and was then dried to form a gate insulating layer having an average thickness of 500 nm.
- PMMA polymethylmethacrylate
- a water dispersion of polyethylenedioxythiophene was applied to an area on the gate insulating layer corresponding to the area between the source electrode and the drain electrode by an inkjet method, and was then dried to form a gate electrode having an average thickness of 100 nm.
- organic TFTs were manufactured after the organic semiconductor material was prepared in the same manner as in Example IE except that as for an arylamine derivative for use in preparing the organic semiconductor material, those shown in Table 5 were used.
- Organic TFTs were manufactured in the same manner as in Example IE except that the organic semiconductor material was changed to the organic semiconductor material prepared in this Comparative Example and the organic semiconductor material was not irradiated with ultraviolet rays from a mercury lamp in the step 4E.
- the compound (SII) was used as an arylamine derivative, and a bifunctional epoxy compound ("DENACOL EX-212" produced by Nagase chemteX Corporation) was used as a photocrosslinking agent, and the compound (SII) , the epoxy compound and a cationic photopolymerization initiator ("FC-508" produced by Sumitomo 3M Limited) in a weight ratio of 50:49:1 were mixed with dichloroethane to obtain an organic semiconductor material.
- a bifunctional epoxy compound (“DENACOL EX-212" produced by Nagase chemteX Corporation) was used as a photocrosslinking agent
- FC-508 cationic photopolymerization initiator
- Organic TFTs were manufactured in the same manner as in Example IE except that the organic semiconductor material prepared in this Comparative Example was used as the organic semiconductor material.
- Organic TFTs were manufactured after the organic semiconductor material was prepared in the same manner as in Example IE except that the compound (Oil) was used as an arylamine derivative for use in preparing the organic semiconductor material.
- the compound (KII) was used as an arylamine derivative, a polyethylene glycol diacrylate represented by the above-mentioned general formula (Bl) (wherein n 2 is 9, and two A 1 S are a hydrogen atom) was used as a vinyl compound, and a cationic photopolymerization initiator ("FC-508" produced by- Sumitomo 3M Limited) was used as a photopolymerization initiator, and then they were dissolved with dichloroethane to obtain an organic semiconductor material (that is, a composition for conductive materials) .
- a cationic photopolymerization initiator (“FC-508" produced by- Sumitomo 3M Limited) was used as a photopolymerization initiator, and then they were dissolved with dichloroethane to obtain an organic semiconductor material (that is, a composition for conductive materials) .
- the mixing ratio of the compound (KII) and the polyethylene glycol diacrylate was 3 : 1 in a molar ratio, and the weight ratio of the total weight of the compound (KII) and the polyethylene glycol diacrylate with respect to the cationic polymerization initiator was 99:1.
- a resist layer having openings where a source electrode and a drain electrode were to be provided was formed on a glass substrate .
- the prepared organic semiconductor material was applied onto the substrate by a spin coating method and then it was dried.
- the organic semiconductor material was irradiated with ultraviolet rays having a wavelength of 365 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 400 mW/cm 2 for 10 seconds in dry atmosphere and then heated for 60 minutes at temperature of HO 0 C to polymerize the compound (KII) and the polyethylene glycol diacrylate, so that an organic semiconductor layer having an average thickness of 50 nm was formed on the glass substrate.
- a mercury lamp U-452", USHIO Inc.
- a gate insulating layer having an average thickness of 500 nm was formed on the organic semiconductor layer.
- a gate electrode having an average thickness of 100 nm was formed on an area on the gate insulating layer corresponding to the area between the source electrode and the drain electrode.
- organic TFTs were manufactured after the organic semiconductor material was prepared in the same manner as in Example IF except that the arylamine derivative for use in preparing the organic semiconductor material and the mixing ratio (mole ratio) of the arylamine derivative and the polyethylene glycol diacrylate were changed to those shown in Table 6.
- Organic TFTs were manufactured after the organic semiconductor material was prepared in the same manner as in Example IF except that the addition of the polyethylene glycol diacrylate to the organic semiconductor material was omitted.
- the word “OFF-state current” means the value of current flowing between the source electrode and the drain electrode when a gate voltage is not applied
- the word “ON-state current” means the value of current flowing between the source electrode and the drain electrode when a gate voltage is applied.
- a larger value of ratio of the absolute value of the ON-state current to the absolute value of the OFF-state current means that an organic TFT has better characteristics.
- the OFF-state current was measured at a potential difference between the source electrode and the drain electrode of 30 V
- the ON-state current was measured at a potential difference between the source electrode and the drain electrode of 30 V and an absolute value of gate voltage of 40 V.
- A The value of ON/OFF ratio was 10 4 or more.
- compositions of Examples which were formed of the compounds containing the substituents X 1 each having an appropriate n 1 value in the general formula (A2) that is the compositions formed of the compounds having the substituents X 1 by which the adjacent main skeletons are allowed to exist at a suitable interval, could have more increased value of ON/OFF ratio, that is, the characteristics of the organic TFT were further improved.
- the polymer contained in the conductive material has a structure in which adjacent main skeletons of compounds are repeatedly bonded or linked through a chemical structure which is produced by the direct reaction between the substituents X 1 of the compounds or a chemical structure which is produced by the reaction between the substituents X 1 of the compounds via a vinyl compound, that is, a structure in which adjacent main skeletons repeatedly exist at a suitable interval. Therefore, it is possible to decrease the interaction between the adjacent main skeletons in the polymer.
- the constituent material of the conductive layer from such a polymer, when an upper layer is formed on the conductive layer using a liquid material, it is possible to properly suppress or prevent the polymer from being swelled or dissolved by the solvent or dispersion medium contained in the ' liquid material. As a result, it is possible to prevent mutual dissolution from occurring between the conductive layer and the upper layer to be formed.
- the polymer can exhibit a high carrier transport ability, and thus a conductive material constituted from the polymer as its main material can also have a high carrier transport ability. Consequently, both an electronic device provided with such a conductive layer and electronic equipment provided such an electronic device can have high reliability. Therefore, the present invention has industrial adaptability required by PCT.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
La présente invention a pour objet une composition pour des matières conductrices à partir de laquelle on peut former une couche conductrice ayant une capacité de transport des porteurs de charge élevée ; une matière conductrice formée de la composition et ayant une capacité de transport des porteurs de charge élevée ; une couche conductrice formée en utilisant la matière conductrice comme matière principale ; un dispositif électronique comprenant la couche conductrice et ayant une fiabilité élevée ; et un matériel électronique comprenant le dispositif électronique. La composition pour des matières conductrices de la présente invention comprend un composé représenté par la formule générale (A1) suivante : où les deux R sont identiques ou différents et représentent chacun indépendamment un groupe alkyle à chaîne linéaire ayant 2 à 8 atomes de carbone, les quatre R2 sont identiques ou différents et représentent chacun indépendamment un atome d'hydrogène, un groupe méthyle ou un groupe éthyle, Y représente un groupe contenant au moins un cycle hydrocarboné aromatique substitué ou non substitué ou un hétérocycle substitué ou non substitué et les deux X sont identiques ou différents et représentent chacun indépendamment un substituant représenté par la formule générale (A2) suivante : où n1 est un nombre entier de 2 à 8.
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005293324A JP2007099960A (ja) | 2005-10-06 | 2005-10-06 | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 |
JP2005-293324 | 2005-10-06 | ||
JP2005-295969 | 2005-10-11 | ||
JP2005295969A JP2007109688A (ja) | 2005-10-11 | 2005-10-11 | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 |
JP2005318017A JP2007128940A (ja) | 2005-11-01 | 2005-11-01 | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 |
JP2005-318017 | 2005-11-01 | ||
JP2005321821A JP2007129117A (ja) | 2005-11-07 | 2005-11-07 | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 |
JP2005-321821 | 2005-11-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007043603A1 true WO2007043603A1 (fr) | 2007-04-19 |
Family
ID=37496490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2006/320363 WO2007043603A1 (fr) | 2005-10-06 | 2006-10-05 | Composition pour des matières conductrices |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2007043603A1 (fr) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003040026A2 (fr) * | 2001-11-02 | 2003-05-15 | The Government Of The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Composites a nanotubes de polymere/carbone electriquement conducteurs et optiquement transparents ; procede de fabrication |
EP1431984A1 (fr) * | 2002-12-17 | 2004-06-23 | E. I. du Pont de Nemours and Company | Composition résistive à base de polymère avec un coefficient de température de la résistance substantiellement neutre, procédés et compositions correspondantes |
EP1553142A2 (fr) * | 2003-12-30 | 2005-07-13 | E.I. Du Pont De Nemours And Company | Compositions de polyimide comprenant de la polyaniline dopée et méthodes associées. |
EP1569244A2 (fr) * | 2004-02-25 | 2005-08-31 | E.I. Du Pont De Nemours & Company Incorporated | Composition d'une pâte conductrice |
-
2006
- 2006-10-05 WO PCT/JP2006/320363 patent/WO2007043603A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003040026A2 (fr) * | 2001-11-02 | 2003-05-15 | The Government Of The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Composites a nanotubes de polymere/carbone electriquement conducteurs et optiquement transparents ; procede de fabrication |
EP1431984A1 (fr) * | 2002-12-17 | 2004-06-23 | E. I. du Pont de Nemours and Company | Composition résistive à base de polymère avec un coefficient de température de la résistance substantiellement neutre, procédés et compositions correspondantes |
EP1553142A2 (fr) * | 2003-12-30 | 2005-07-13 | E.I. Du Pont De Nemours And Company | Compositions de polyimide comprenant de la polyaniline dopée et méthodes associées. |
EP1569244A2 (fr) * | 2004-02-25 | 2005-08-31 | E.I. Du Pont De Nemours & Company Incorporated | Composition d'une pâte conductrice |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7829639B2 (en) | Composition for conductive layers in electronic devices | |
WO2006064892A1 (fr) | Materiau conducteur, composition pour le materiau conducteur, couche conductrice, dispositif electronique et equipement electronique | |
US20090009061A1 (en) | Composition for Conductive Materials Comprising Crosslinkable Arylamine Compounds and Use Thereof in Electronic Devices and Electronic Equipment | |
US7910226B2 (en) | Porous semiconductor layer formation material | |
WO2006043681A1 (fr) | Composition pour matériaux conducteurs, matériau conducteur, couche conductrice, dispositif électronique, et équipement électronique | |
US7659043B2 (en) | Composition for conductive materials, conductive material, conductive layer, electronic device, and electronic equipment | |
JP2007197587A (ja) | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 | |
WO2006075723A1 (fr) | Polymere conducteur, couche conductrice, dispositif electronique et equipement electronique | |
US8212471B2 (en) | Light emitting device and electronic equipment provided with the light emitting device | |
US8012528B2 (en) | Composition for conductive materials comprising tetra acrylate functionalised arylamines, conductive material and layer, electronic device and equipment | |
WO2006064896A1 (fr) | Materiau conducteur, composition pour le materiau conducteur, couche conductrice et dispositif et equipement electroniques | |
WO2007043675A9 (fr) | Composition pour des matières conductrices, matière conductrice, couche conductrice, dispositif électronique et matériel électronique | |
JP2007129118A (ja) | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 | |
WO2007043603A1 (fr) | Composition pour des matières conductrices | |
JP4506508B2 (ja) | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 | |
JP4539352B2 (ja) | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 | |
WO2006025612A1 (fr) | Composition de matériau pour couches conductrices dans des dispositifs électroniques | |
JP4513602B2 (ja) | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 | |
JP2007099960A (ja) | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 | |
WO2006075724A1 (fr) | Polymere conducteur, couche conductrice, dispositif electronique et equipement electronique | |
JP2007106780A (ja) | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 | |
JP2006237442A (ja) | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 | |
JP2006241266A (ja) | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 | |
JP2007128940A (ja) | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 | |
JP2007128941A (ja) | 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 06811660 Country of ref document: EP Kind code of ref document: A1 |