WO2007013869A1 - Creuset de dosage situe a proximite d'un angle dans un filtre a energie finale d'un implanteur seriel pour regulation de la dose en boucle fermee - Google Patents

Creuset de dosage situe a proximite d'un angle dans un filtre a energie finale d'un implanteur seriel pour regulation de la dose en boucle fermee Download PDF

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Publication number
WO2007013869A1
WO2007013869A1 PCT/US2005/019526 US2005019526W WO2007013869A1 WO 2007013869 A1 WO2007013869 A1 WO 2007013869A1 US 2005019526 W US2005019526 W US 2005019526W WO 2007013869 A1 WO2007013869 A1 WO 2007013869A1
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WIPO (PCT)
Prior art keywords
aef
ion beam
ion
cup
workpiece
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Application number
PCT/US2005/019526
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English (en)
Inventor
Robert Rathmell
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Axcelis Technologies, Inc.
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Application filed by Axcelis Technologies, Inc. filed Critical Axcelis Technologies, Inc.
Priority to PCT/US2005/019526 priority Critical patent/WO2007013869A1/fr
Priority to CN2005800512988A priority patent/CN101238539B/zh
Priority to JP2008515667A priority patent/JP4962801B2/ja
Priority to KR1020077030069A priority patent/KR101225827B1/ko
Priority to EP05810211A priority patent/EP1894222A1/fr
Publication of WO2007013869A1 publication Critical patent/WO2007013869A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation

Definitions

  • the present invention relates generally to ion implantation systems, and more particularly to a system and method for ion dose measurement and compensation in the presence of photoresist outgassing, pressure and ion source fluctuations in a serial ion implanter.
  • Ion beam implanters are used to treat silicon wafers with an ion beam, in order to produce n or p type extrinsic material doping or to form passivation layers during fabrication of an integrated circuit.
  • the ion beam implanter injects a selected ion species to produce the desired extrinsic material.
  • Implanting ions generated from source materials such as antimony, arsenic or phosphorus results in "n type” extrinsic material wafers, whereas if "p type” extrinsic material wafers are desired, ions generated with source materials such as boron, gallium or indium may be implanted.
  • Typical ion beam implanters include an ion source for generating positively charged ions from ionizable source materials. The generated ions are formed into a beam and directed along a predetermined beam path to an implantation station.
  • the ion beam implanter may include beam forming and shaping structures extending between the ion source and the implantation station. The beam forming and shaping structures maintain the ion beam and bound an elongated interior cavity or passageway through which the beam passes en route to the implantation station. When operating an implanter, this passageway is typically evacuated to reduce the probability of ions being deflected from the predetermined beam path as a result of collisions with air molecules.
  • the mass of an ion relative to the charge thereon affects the degree to which it is accelerated both axially and transversely by an electrostatic or magnetic field. Therefore, the beam which reaches a desired area of a semiconductor wafer or other target can be made very pure since ions of undesirable molecular weight will be deflected to positions away from the beam and implantation of other than desired materials can be avoided.
  • the process of selectively separating ions of desired and undesired charge-to-mass ratios is known as mass analysis.
  • Mass analyzers typically employ a mass analysis magnet creating a dipole magnetic field to deflect various ions in an ion beam via magnetic deflection in an arcuate passageway which will effectively separate ions of different charge-to-mass ratios.
  • Dosimetry is the measurement of ions implanted in a wafer or other workpiece.
  • closed loop feedback control systems typically are utilized in order to dynamically adjust the implantation to achieve uniformity in the implanted workpiece.
  • Such control systems utilize real-time current monitoring to control the slow scan velocity of an implanter.
  • a Faraday disk or Faraday cup periodically measures the beam current and adjusts the slow scan speed to ensure a constant dose. Frequent measurement allows the dose control system to respond quickly to changes in beam current.
  • the Faraday cup may be stationary, well shielded, and located close to the wafers, making it sensitive to the beam current dosing the wafers. However, Faraday cups measure only the electric current portion of the beam current.
  • the dose controller may read the beam current from the Faraday cup and the pressure from a pressure gauge concurrently.
  • the measured beam current is modified by software to present a compensated beam current signal to the circuit controlling the slow scan.
  • the amount of compensation e.g., in the compensated beam current signal
  • pressure compensation improves repeatability and uniformity over a wide range of implant pressures.
  • the vacuum in an implanter is never perfect. There is always some residual gas in the system. Usually the residual gas poses no problems (in fact, a small amount of residual gas is beneficial for good beam transport and effective charge control). However, at high enough pressure, for example, increased pressure due to photoresist outgassing, charge exchange between the ion beam and the residual gas can cause dosimetry errors. If the shift in dose between implants into bare wafers and implants into photoresist-coated (PR) wafers is unacceptably large, or if the dose uniformity is significantly degraded, then pressure compensation may be employed in order to improve uniformity.
  • PR photoresist-coated
  • Charge exchange reactions between ion beams and residual gas can add or subtract electrons from the ion, changing the ion's charge state from the value desired in the recipe.
  • the charge exchange reaction is neutralization, a portion of the incident ion flux is neutralized. The result is a reduction in the electrical current while the particle current (including neutrals) remains unchanged.
  • the charge exchange reaction is electron stripping, a portion of the ion flux loses electrons. The result is an increase in the electrical current while the particle current remains the same.
  • the beam often undergoes much more neutralization than stripping.
  • the beam current measured by the Faraday cup decreases whenever the end station pressure increases. Ions in the beam are neutralized, but they are not deflected or stopped by the residual gas.
  • the dose rate, dopant atoms per area per time, is unchanged by charge exchange after the analyzer magnet. Implanted neutrals contribute to the dose received by the wafer, but are not measured by the Faraday cup. As a result, the wafer may become overdosed.
  • Pressure compensation may thus be employed whenever charge exchange between the ion beam and residual gas in the process chamber has a significant effect on dose.
  • the pressure at which this happens depends on the recipe and the process specifications. For some recipes, compensation is required to meet implanter specification when the pressure due to photoresist outgassing is 5x10 "6 torr as measured on the pressure gauge. For most recipes where the pressure due to photoresist outgassing is 2 x 10 "5 torr or higher, compensation may be worth investigating. Such compensation may include measuring the effect of photoresist outgassing by implanting monitor wafers with and without photoresist, and comparing the measured variation to the process specification. The amount of compensation required depends on the pressure, which the dose controller reads from a pressure gauge during the implant.
  • the present invention is directed to a system and method for providing an accurate ion current measurement associated with the dose of a wafer for use in an ion implantation system.
  • the ion implantation system has a dose cup located near a final energy bend of a scanned or ribbon-like ion beam of a serial implanter.
  • the system comprises an ion implanter having a charged particle source for producing a ribbon-like ion beam.
  • the system further comprises an angular energy filter (AEF) system configured to filter an energy of the ribbon-like ion beam using the final energy bend in the ion beam.
  • AEF angular energy filter
  • the AEF system further comprises the AEF dose cup preferably immediately following the final energy bend of the ion beam to provide an accurate measurement of the ion current of the beam.
  • the AEF system directs the beam along a beam path in a downstream direction toward a target wafer held in an end station.
  • the AEF system is defined by a chamber or AEF chamber wherein the AEF components reside upstream of the process chamber or end station.
  • the end station downstream of the AEF system is defined by a chamber wherein the wafer or workpiece is secured in place for movement relative to the ribbon-like ion beam for implanting ions into the wafer.
  • the AEF system may include pumping that maintains a lower pressure near the 'AEF than in the end station where the gas is being generated.
  • the AEF system may be separated from the end station chamber by an opening that limits gas flow so as to allow a pressure difference between the AEF chamber and the end station process chamber.
  • the AEF dose cup in one aspect of the present invention is beneficially located up stream of the end station within the AEF system near the final energy bend to mitigate pressure variations due to outgassing from implantation operations on the wafer.
  • the system provides accurate ion current measurement before such gases can produce substantial quantities of neutral particles in the ion beam, generally without the need for pressure compensation.
  • dosimetry measurements may also be used to affect the scan velocity of the wafer to ensure uniform closed loop dose control in the presence of beam current changes from the ion source and outgassing from the wafer.
  • the ion beam may comprise a scanned or a continuous ribbon-like beam.
  • the plane of the final energy bend in the ion beam is orthogonal to the plane of the ribbon-like ion beam
  • the AEF system is located in an AEF chamber region upsteam of the endstation, and the pressure within the AEF chamber is further reduced by a pump, thereby reducing the effect of outgassing and other sources of pressure on the AEF dose cup.
  • the AEF dose cup is located near the final energy bend in the AEF chamber and upstream of the end station and no pressure compensation is employed
  • the ion implantation system further comprises pressure compensation to further refine the AEF dose cup measurements.
  • the AEF dose cup is located in an overscan region in relationship to the wafer or workpiece scanned by the ribbon-like ion beam.
  • the readings from a profiler cup at about the plane of the wafer are compared to those of the AEF cup during an implant to deduce the charge exchange rate difference between the two positions, thereby enabling a determination of the number of neutral particles produced over the corresponding path length.
  • a third alternative is to use the difference in current between the AEF cup and the cup in the end station to compensate for charge exchange.
  • Cp 1 + ((IAEF - IES)/IAEF)*(LAEF/(LES - UEF))*(PAEF/PES), where ' IAEF is the current measured by the AEF cup corrected by setup cup calibration IES is the current measured by the End Station cup corrected by setup cup calibration
  • LAEF is nominally the distance from the AEF bend to the AEF cup LES is nominally the distance from the AEF bend to the End Station cup
  • PAEF is the pressure measured in the AEF chamber
  • PES is the pressure measured in the End Station
  • Fig. 1 is a functional block diagram of an ion beam implantation system of the present invention
  • Fig. 2 is a top plan view of selected components and a scanned or ribbon-like ion beam of the ion beam implantation system of Fig. 1 ;
  • Fig. 3 is an ion beam path view of selected components and a region scanned by the ion beam of the implantation system of Figs. 1 and 2;
  • Fig. 4 is a perspective view of selected final energy filter components of an exemplary ion beam implantation system of the present invention
  • Figs. 5A and 5B are schematic top plan and right side views, respectively, of an ion beam path and several possible Faraday cup locations of an ion beam implantation system of the present invention
  • Fig. 6 is a simplified right side view of an ion beam path with a final energy bend, components of an AEF system, and an end station of an exemplary ion beam implantation system of the present invention
  • Fig. 7 is a simplified right side view of an exemplary AEF system suitable for use in the ion beam implantation systems of Figs. 1 -6.
  • the invention provides a system and method for providing an accurate ion current measurement associated with the dose of a wafer for use in an ion implantation system. Such use may include dosimetry measurements, data recordings, and feedback to the system for closed loop control of, for example, the velocity of a wafer slow scan motion drive. Dose control in the presence of high pressures in the process chamber, particularly due to photo-resist outgassing, requires a means of determining the effective implant beam current when some fraction of the beam ions have become neutralized on their path to the wafer.
  • the ion implantation system of the present invention combines a final energy filter having a final energy bend and a scanned or ribbon-like beam to provide a new beginning point for the ion beam. That is, beginning from the final energy bend, the ion beam is substantially without neutrals in the ion beam that is directed toward the wafer.
  • a Faraday dose cup is provided immediately after a final energy bend that is orthogonal to the plane of the ribbon-like beam. In this way, ion current is measured before there is significant opportunity to create neutrals in the path directed toward the wafer.
  • cup current measurement near the final energy bend eliminates the need for pressure compensation of the measured current in a significant portion of implant conditions.
  • dose cups located in the end station or chamber region suffer the substantial deleterious effects of photo-resist outgassing.
  • Figs. 1 and 2 illustrates an ion beam implantation system shown generally at 100, in which the various aspects of the present invention may be implemented.
  • the system 100 includes an ion implanter 102 for providing ions that form a scanned or ribbon-like ion beam 104 that traverses a beam path through an angular energy filter (AEF) system 110 using a final energy bend to filter and redirect the ions of a final energy ion beam 114 for implantation into a workpiece or wafer 118 at end station 120.
  • AEF angular energy filter
  • wafer and workpiece will be used interchangeably.
  • the AEF system 110 comprises a pair of deflection plates 122 that electrostatically (or alternately magnetically) bend charged ions of the scanned or ribbon-like ion beam 104 to produce the resultant ion beam 114 at a selective final energy.
  • Suppression electrodes 124 of the AEF system 110 terminate the potential field of a positive charged deflection plate so electrons are not pulled from the end station 120.
  • the AEF system 110 further comprises an AEF dose cup 128 immediately following the final energy bend of the ion beam to accurately measure the ion current.
  • the final energy bend of the AEF system further serves to direct the energy filtered beam 114 along a beam path in a downstream direction toward the target wafer 118 held by an electrostatic clamp 130 in end station 120.
  • FIG. 3 illustrates a diagram 300 of several system components and a region scanned by the ion beam of the implantation system of Figs. 1 and 2 as viewed from the energy filtered ion beam 114.
  • the ribbon-like ion beam 114 impacts the wafer 118, held to, for example, a translating disk-shaped electrostatic clamp 130 within the end station 120 or another such implantation chamber.
  • a translating clamp 130 is disclosed, it should also be appreciated that the present invention is equally applicable to several types of clamp motions, including rotation, translation, and that of a "serial" ion beam implanter, that is, one in which the ion beam 114 is directed to scan over the surface of a stationary workpiece 118.
  • the translating "slow scan” or “y” motion 330 of the wafer 118, together with the "x" width of the scanned or ribbon-like ion beam 114 provides a larger scanned region 310, which encompasses the entire wafer 118.
  • the area not used or scanned by the wafer is termed an overscan region 320 which may be useful for dose measurements.
  • the ribbon-like ion beam 114 immediately after the final energy bend, the ribbon-like ion beam 114 also impacts the AEF dose cup 128 of Fig. 2 enroute to the wafer 118.
  • Fig. 3 illustrates that AEF dose cup 128 makes use of the overscan region 320, and thus does not interfere with the beam striking the workpiece.
  • the ion implantation system 100 of the present invention provides the AEF dose cup 128 of the AEF system 110 within an AEF chamber, well upstream of the end station or implantation chamber, thereby mitigating the outgassing and ion exchange issues discussed.
  • the dose cup 128 immediately after the final energy bend, neutral ions have been removed from the beam and very little neutralization of the beam has yet to occur, thereby making the measured electric current an extremely accurate approximation of the implant current.
  • AEF dose cup 128 is illustrated on the right side of the ion beam overscan region 320 in this example, it should also be appreciated that in the present invention either left or right sides of the ion beam overscan may be utilized for placement of the AEF dose cup 128, such as dose cup alternate position 128a.
  • Fig. 4 illustrates selected final energy filter components of an exemplary ion beam implantation system 400 in accordance with the present invention.
  • An implanter e.g., 102 of Figs. 1 and 2 may be used to provide a scanned or ribbon-like ion beam 104.
  • Ion beam 104 enters an angular energy filter AEF system 110, wherein the beam is bent (deflected) between deflection plates 122 that may, for example, comprise a positive potential plate 122a (e.g., +25kV) and a negative potential plate 122b (e.g., - 25kV).
  • Ion beam 104 then passes through suppression electrodes 124 for termination of the positive potential deflection plate 122a and energy absorption of the neutral portion of the beam.
  • the ion current within ion beam 104 is then measured by the AEF dose cup 128 within the AEF system 110 immediately after the energy bend at plates 122 before being directed downstream toward an end station 120.
  • the AEF dose cup 128 measures the ion current associated with final energy of beam 104 before the beam traverses a significant distance of the beam path toward the workpiece and suffers an ever increasing rate of ion exchange. Thus, a more accurate dose measurement may be obtained relative to that of typical measurements made at or about the vicinity of the wafer.
  • AEF dose cup 128 measures the ion current in the overscan region (e.g., 320 Fig. 3)
  • either left or right sides of the ion beam overscan may be utilized for placement of the dose cup 128, such as dose cup alternate position 128a.
  • Ion beam implantation system 400 further comprises components within the end station 120 defined by an implantation chamber wall.
  • Energy filter slits 440 further define the height and therefore the energy band of acceptable ions within the ion beam 114 directed toward the wafer 118.
  • a profiler or profiler dose cup 442 at or near the plane of the wafer may be used at implant set-up and for calibration of the system 400.
  • Figs. 5A and 5B schematically illustrate top plan and right side views, respectively, of an ion beam path and several possible dose cup locations for monitoring ion current during implant using an ion beam implantation system 500 in accordance with the present invention.
  • System 500 generates a scanned or ribbon-like ion beam 502 from an ion source, wherein the ions of the beam, in one example, are uniformly shaped and accelerated by a P-Lens and acceleration tube 503 to a more energetic state or a less energetic state.
  • Ion beam 502 then enters an angular energy filter system 504 configured to filter an energy of the beam 502.
  • a generally positively charged ion beam 502 is bent (e.g., about nominal bend axis 505) by deflection plates 506 toward the negative deflection plate and away from the positive deflection plate by an angle (e.g., a 15° angle) corresponding to the final energy state and direction desired.
  • the beam 502 After the ion beam has been bent by the deflection plates 506, the beam 502 then passes through suppression electrodes 507 for termination of the positive potential deflection plate (e.g., 122a) and energy absorption of the neutral portion of the beam 502.
  • the ion current within ion beam 502 is then measured by AEF dose cup 508 within the AEF system 504 immediately after being directed in a downstream direction toward an end station 510.
  • the AEF dose cup 508 measures the ion current associated with final energy of beam 502 before the beam traverses a significant distance of the beam path toward the workpiece 512.
  • the ion beam 502 leaves the AEF system 504 in the AEF chamber section and traverses the beam path downstream entering the end station 510.
  • the ion beam enters an electron flood assembly (EF) 514 that controls the electron charge on the wafer 512.
  • EF 514 may also optionally, comprise one or more associated dose cups 516, which may be used to monitor overscan current in the end station.
  • Ion beam 502 then impacts the wafer 512, a profiler dose cup 518 for measuring the flux across the wafer 512, and finally a tune flag 520 used to measure the unscanned or scanned beam current while beam optics is being adjusted to the desired value prior to implant.
  • the AEF dose cup 508 is located as far as possible from the end station in a part of the system such as the AEF chamber that has a much better vacuum.
  • the fraction of ions made neutral after the bend that contribute to the implanted dose may be accounted for, for example, using the proportionality constant Cp to obtain the actual implanted dose level.
  • Cp the proportionality constant
  • This conclusion may be determined in one of several ways: 1),The dose accumulated in a photo-resist covered wafer may be approximately 1% or more different from a bare wafer implanted by the same recipe. Or, there may be non-uniformity in the dose of a photo-resist covered wafer due to more outgassing which occurs as the beam sweeps across the middle of the wafer compared to the ends of the slow scan where it spends less time on the wafer.
  • a significant change in the reading of the AEF cup current correlated with a change in the AEF pressure during implant would indicate that the current reading is affected by charge exchange rather than source output changes.
  • a large change in the End Station dose cup 516 correlated with a smaller change in the AEF dose cup reading is consistent with charge exchange in this path to the wafer.
  • Fig. 6 illustrates another exemplary ion beam implantation system 600 in accordance with the present invention.
  • System 600 further illustrates the path of an ion beam 602 through the system 600 having an angular energy filter system 604 located in a region of an AEF chamber 607 upsteam of the endstation 610 residing within an implantation process chamber 612.
  • the atmosphere within the end station 610 may be isolated from that of the AEF chamber 607 by a vacuum isolation valve 614.
  • the pressure within one or both of these chambers may be reduced by a vacuum or cryogenic pump, for example, vacuum pump 620 and two cryogenic pumps 622.
  • the pressure within the AEF chamber region 607 may be reduced below the pressure of the end station 610, thereby reducing the effect of outgassing and other sources of pressure on the AEF dose cup.
  • system 600 generates a scanned or ribbon-like ion beam 602 from an ion source, wherein the ions are either accelerated or decelerated as desired by acceleration tube 626.
  • Ion beam 602 then enters an angular energy filter system 604 configured to filter an energy of the beam 602.
  • a generally positively charged ion beam 602 is bent by deflection plates 630 away from the positive deflection plate 630a and toward the negative deflection plate 630b by an angle (e.g., a 15° angle) corresponding to the final energy state and direction desired.
  • the ions within ion beam 602 having the desired energy are now deflected in a desired beam path trajectory thru suppression electrodes 632 and to an AEF dose cup 634 of the AEF system 604 located near the AEF bend.
  • the energy of undeflected neutral particles may be absorbed by a neutral beam trap 636 following the suppression electrodes.
  • the AEF dose cup 634 may be located just behind this neutral beam dump. Over-energetic ions are filtered out (trapped) by high energy contaminate dump 638, while under-energetic ions are filtered out by low energy contaminant dump 640 (shown two places).
  • the wafer support structure 644 may be utilized to impart rotary and/or translational motion to the wafer relative to the scanned or ribbon-like ion beam 602.
  • the ion beam 602 travels through an evacuated path from the ion source (not shown) to the implantation chamber 612, which is also evacuated.
  • the ion beam 602 strikes the wafer workpiece 642 as it rotates and/or translates (e.g., 330 of Fig. 3).
  • the ion dosage received by the workpiece 642 may be determined (at least partially) by the velocity of translation of the support structure 644 under closed-loop control of control electronics (not shown) as provided by feedback from measurements of the AEF dose cup 634.
  • FIG. 7 illustrates an exemplary AEF system 704 suitable for use in the ion beam implantation systems of Figs. 1-6 in accordance with the present invention.
  • AEF system 704 has a mounting 705 which may be mounted on either the right or left hand side of the AEF chamber wall 707.
  • AEF system 704 comprises deflection plates 730 that typically utilize a high voltage potential (e.g., +/- 25kV) on positive and negative deflection plates, 730a and 730b, respectively, to deflect a positively charged ion beam 702 as shown.
  • a high voltage potential e.g., +/- 25kV
  • ion beam 702 is bent about 15° in a downward direction relative to a horizontal beam path, passing through suppression electrodes 732 to an AEF dose cup 734 before continuing downstream to the end station and the wafer workpiece.
  • the AEF dose cup 734 may also be affixed to mounting 705 or may be mounted to the side or rear wall of the AEF chamber 707.
  • a goal of the present invention is to locate the AEF dose cup 734 as near as possible to final energy bend within the AEF system 704, given consideration for other factors such as maintaining uniform deflection fields within the AEF. Accordingly, the purpose of this location is to provide the ions the shortest possible path for ion exchange before the dose measurement is made, and to mount the dose cup 734 in a location that will achieve the best possible vacuum to minimize ion exchange collisions. In addition, it is intended to place the AEF dose cup 734 as far as possible from the wafer, which is a major source of pressure due to photoresist outgassing, thereby minimizing such ion exchange collision opportunities that negatively impact dosimetry.
  • AEF system 704 further comprises another set of suppression electrodes 740 used to suppress electrons from moving from the AEF region toward the acceleration tube.
  • a dose cup is located near the AEF final energy bend to measure those ions that remain charged long enough to complete the bend in the beam path to the wafer, but before traversing much of that path length.
  • the proportionality constant Cp may be determined by one of two disclosed methods to compensate for pressure changes that are large enough to require corrections. Then, during implant, C P and the AEF dose measurement may be used to determine the actual implanted dose proportional to the AEF dose measurement, as shown in equations (1) above.
  • other dose cups such as those shown at 516 of Fig. 5A may be unnecessary.
  • the effect of photoresist outgassing on the AEF dose cup may be further reduced by locating a pump at the AEF chamber (e.g., 607, 707) in order to keep the pressure within the AEF chamber lower than that of the process chamber 612.
  • a dose cup located at a final energy bend of a scanned or ribbon-like ion beam may be used for accurate dosimetry measurements or for closed loop dose control.
  • Such control may be used to affect scan velocity to ensure uniform dose in the presence of beam current changes from the ion source output, for example, or in the presence of outgassing from the wafer.

Abstract

L'invention concerne un système d'implantation ionique (600) comprenant un creuset de dosage (634) situé à proximité de l'angle à énergie finale d'un faisceau ionique balayé ou de type ruban d'un implanteur ionique sériel, permettant de mesurer précisément le courant ionique associé à la dose d'une pièce ou d'une plaquette. Le système comprend un implanteur ionique comportant une source de faisceau ionique conçu pour produire un faisceau ionique de type ruban (602). Le système comprend également un système AEF (filtre à énergie angulaire) conçu pour filtrer une énergie du faisceau ionique de type ruban en traitant le faisceau au niveau d'un angle à énergie finale. Ce système AEF comprend également un creuset de dosage AEF associé au système AEF, conçu pour mesurer le courant du faisceau ionique, le creuset étant situé immédiatement derrière l'angle à énergie finale. Une station finale (610), en aval du système AEF, est formée par une chambre, une pièce étant fixée en place de façon à pouvoir se déplacer par rapport au faisceau ionique de type ruban pour l'implantation ionique. Le creuset de dosage AEF est de préférence situé en amont de la station finale, à proximité de l'angle à énergie finale. Cet agencement permet d'atténuer les variations de pression dues au dégazage provenant des opérations d'implantation sur la pièce. Le système permet ainsi de mesurer précisément le courant ionique avant que ces gaz produisent des quantités importantes de particules neutres dans le faisceau ionique, en général sans nécessité de compensation de pression. Ces mesures de dosimétrie peuvent également être utilisées pour modifier la vitesse de balayage afin de garantir une régulation de la dose en boucle fermée uniforme en présence de variations de courant du faisceau provenant de la source ionique et du dégazage de la pièce.
PCT/US2005/019526 2005-06-06 2005-06-06 Creuset de dosage situe a proximite d'un angle dans un filtre a energie finale d'un implanteur seriel pour regulation de la dose en boucle fermee WO2007013869A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/US2005/019526 WO2007013869A1 (fr) 2005-06-06 2005-06-06 Creuset de dosage situe a proximite d'un angle dans un filtre a energie finale d'un implanteur seriel pour regulation de la dose en boucle fermee
CN2005800512988A CN101238539B (zh) 2005-06-06 2005-06-06 靠近连续注入机最后能量过滤器中弯折部的闭环回路剂量控制剂量杯
JP2008515667A JP4962801B2 (ja) 2005-06-06 2005-06-06 閉ループ線量制御のためにシリアル式注入装置の最終エネルギーベンド付近に配置された線量カップ
KR1020077030069A KR101225827B1 (ko) 2005-06-06 2005-06-06 폐루프 선량 제어를 위한 시리얼 주입기의 최종 에너지필터 내의 벤드 근처에 배치된 선량 컵
EP05810211A EP1894222A1 (fr) 2005-06-06 2005-06-06 Creuset de dosage situe a proximite d'un angle dans un filtre a energie finale d'un implanteur seriel pour regulation de la dose en boucle fermee

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WO2011143367A3 (fr) * 2010-05-11 2012-03-01 Hampton University, Office Of General Counsel Appareil, procédé et système pour mesurer le rayonnement gamma instantané et d'autres rayonnements induits par un faisceau lors de traitements par hadronthérapie à des fins de vérification de la dose et de la gamme utilisant la détection des rayonnements ionisants
US9315892B2 (en) 2013-03-15 2016-04-19 Taiwan Semiconductor Manufacturing Company Limited Method and apparatus for controlling beam angle during ion implantation of a semiconductor wafer based upon pressure
US9502210B2 (en) 2014-08-08 2016-11-22 Sumitomo Heavy Industries Ion Technology Co., Ltd. Ion implanter, ion implantation method, and beam measurement apparatus
WO2020106427A1 (fr) * 2018-11-20 2020-05-28 Applied Materials, Inc. Appareil et procédé de commande d'un faisceau d'ions à l'aide d'un filtre électrostatique
US10790116B2 (en) 2018-11-20 2020-09-29 Applied Materials, Inc. Electostatic filter and method for controlling ion beam using electostatic filter
US10804068B2 (en) 2018-11-20 2020-10-13 Applied Materials, Inc. Electostatic filter and method for controlling ion beam properties using electrostatic filter
US10811259B2 (en) 2018-02-23 2020-10-20 Boe Technology Group Co., Ltd. Ion injecting device using vacant baffle and faraday cups, and ion injecting method thereof, for detecting content of suspending particles
US10886098B2 (en) 2018-11-20 2021-01-05 Applied Materials, Inc. Electrostatic filter and ion implanter having asymmetric electrostatic configuration
EP3836188A3 (fr) * 2016-11-25 2021-11-03 MI2-Factory GmbH Procédé et dispositif d'implantation ionique dans des pastilles

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US9218941B2 (en) * 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
JP6207413B2 (ja) * 2014-01-29 2017-10-04 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入装置の制御方法
CN107993931B (zh) * 2017-11-30 2019-11-19 上海华力微电子有限公司 提高注入机生产效率的方法
US11264205B2 (en) 2019-12-06 2022-03-01 Applied Materials, Inc. Techniques for determining and correcting for expected dose variation during implantation of photoresist-coated substrates

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JP2011526065A (ja) * 2008-06-25 2011-09-29 アクセリス テクノロジーズ， インコーポレイテッド ブロードビームの均一性を制御するシステムおよび方法
WO2011143367A3 (fr) * 2010-05-11 2012-03-01 Hampton University, Office Of General Counsel Appareil, procédé et système pour mesurer le rayonnement gamma instantané et d'autres rayonnements induits par un faisceau lors de traitements par hadronthérapie à des fins de vérification de la dose et de la gamme utilisant la détection des rayonnements ionisants
US9315892B2 (en) 2013-03-15 2016-04-19 Taiwan Semiconductor Manufacturing Company Limited Method and apparatus for controlling beam angle during ion implantation of a semiconductor wafer based upon pressure
US9502210B2 (en) 2014-08-08 2016-11-22 Sumitomo Heavy Industries Ion Technology Co., Ltd. Ion implanter, ion implantation method, and beam measurement apparatus
EP3836188A3 (fr) * 2016-11-25 2021-11-03 MI2-Factory GmbH Procédé et dispositif d'implantation ionique dans des pastilles
US11929229B2 (en) 2016-11-25 2024-03-12 mi2-factory GmbH Semiconductor wafer
US10811259B2 (en) 2018-02-23 2020-10-20 Boe Technology Group Co., Ltd. Ion injecting device using vacant baffle and faraday cups, and ion injecting method thereof, for detecting content of suspending particles
WO2020106427A1 (fr) * 2018-11-20 2020-05-28 Applied Materials, Inc. Appareil et procédé de commande d'un faisceau d'ions à l'aide d'un filtre électrostatique
US10790116B2 (en) 2018-11-20 2020-09-29 Applied Materials, Inc. Electostatic filter and method for controlling ion beam using electostatic filter
US10804068B2 (en) 2018-11-20 2020-10-13 Applied Materials, Inc. Electostatic filter and method for controlling ion beam properties using electrostatic filter
US10886098B2 (en) 2018-11-20 2021-01-05 Applied Materials, Inc. Electrostatic filter and ion implanter having asymmetric electrostatic configuration
US10937624B2 (en) 2018-11-20 2021-03-02 Applied Materials, Inc. Apparatus and method for controlling ion beam using electrostatic filter

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EP1894222A1 (fr) 2008-03-05
JP2008546160A (ja) 2008-12-18
JP4962801B2 (ja) 2012-06-27
CN101238539A (zh) 2008-08-06
CN101238539B (zh) 2010-10-06
KR20080012374A (ko) 2008-02-11
KR101225827B1 (ko) 2013-01-23

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