WO2007011604A1 - Method of suppressing distortion of a working laser beam of a laser link processing system - Google Patents
Method of suppressing distortion of a working laser beam of a laser link processing system Download PDFInfo
- Publication number
- WO2007011604A1 WO2007011604A1 PCT/US2006/027032 US2006027032W WO2007011604A1 WO 2007011604 A1 WO2007011604 A1 WO 2007011604A1 US 2006027032 W US2006027032 W US 2006027032W WO 2007011604 A1 WO2007011604 A1 WO 2007011604A1
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- WIPO (PCT)
- Prior art keywords
- laser
- attenuator
- component
- output beam
- primary
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/067—Manufacture or treatment of conductive parts of the interconnections by modifying the pattern of conductive parts
- H10W20/068—Manufacture or treatment of conductive parts of the interconnections by modifying the pattern of conductive parts by using a laser, e.g. laser cutting or laser direct writing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0665—Shaping the laser beam, e.g. by masks or multi-focusing by beam condensation on the workpiece, e.g. for focusing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/092—Adapting interconnections, e.g. making engineering charges, repairing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Definitions
- This invention relates to laser link processing and, in particular, to techniques for suppressing distortion of a working laser beam directed to perform link processing of a semiconductor target specimen.
- a method of suppressing distortion of a working laser beam directed for incidence on a target specimen that is presented for processing by a laser link processing system removes stray light-induced distortion from the working laser beam.
- the working laser beam is derived from a laser output beam propagating from a laser and attenuated by an attenuator, both of which form parts of the laser link processing system.
- the distortion of the working laser beam generally increases in predominance in response to increasing amounts of attenuation of the laser output beam.
- Preferred embodiments of the method entail directing the laser output beam through the attenuator to form an attenuator output beam and providing a spatial filter that includes a focus lens and an aperture.
- the attenuator output beam is directed to the focus lens to form a focused beam at a focal region that is associated with the focus lens.
- the focused beam includes a primary beam component and a stray light component, the latter of which resulting from link processing system scattered light combining with the attenuator output beam.
- the primary beam component focuses to a spatial frequency
- the stray light component focuses to a spatial frequency that is higher than the spatial frequency of a primary beam component.
- the aperture of the spatial filter is positioned at or near the focal region to allow the primary beam component to pass unobstructed and to block the stray light components, and thereby removes stray light-induced distortion from the working laser beam.
- FIG. 1 is a block diagram of a conventional laser link processing system.
- Figs. 2A and 2B show with different image magnifications alignment targets on the work surface of a semiconductor wafer specimen presented for processing by the laser link processing systems of Figs. 1 and 4.
- Figs. 3A-1 , 3A-2, 3B-1 , 3B-2, 3C-1 , 3C-2, 3D-1 , and 3D-2 show the impact of increasing attenuation of a laser output beam on scanning light reflected by a target specimen of Figs. 2A and 2B.
- Fig. 4 is a block diagram of a laser link processing system configured to carry out a preferred method of suppressing distortion of a working laser beam directed for link processing of a target specimen.
- Fig. 5 is a diagram showing in cross-section a spatial filter assembly included in the laser link processing system of Fig. 4.
- Figs. 6A-1 , 6A-2, 6B-1 , 6B-2, 6C-1 , 6C-2, 6D-1 , and 6D-2 show the effect of the spatial filter assembly used in the laser processing system of Fig. 4 to suppress distortion of scanning light reflected by alignment targets on the work surface of the semiconductor wafer specimen of Figs. 2A and 2B.
- Fig. 1 is a block diagram of a conventional laser link processing system 10 that produces a working laser beam 12 directed for incidence on a work surface 14 of a target specimen.
- Working laser beam 12 is derived from an output beam 16 emitted by a laser 18, preferably by harmonic generation to achieve a desired wavelength of output beam 16 and thereby form a desired working laser beam spot size.
- Harmonic generation can be accomplished by use of harmonic wavelengths of the fundamental infrared (IR) wavelength of a solid-state laser or fiber laser typically operating in the 900 nm-1 ,500 nm range. Lasers emitting light in this IR wavelength range are currently used in laser link processing systems such as a Model 9830, manufactured by Electro Scientific Industries, Inc., which is the assignee of this patent application.
- Shorter harmonic wavelengths intended for use in link processing include wavelengths below about 532 nm such as, for example, 355 nm in the ultraviolet (UV) range.
- Laser output beam 16 propagates through a beam conditioning optical component module 20, which establishes optical properties of laser output beam 16 that make it suitable for incidence on an acousto-optic modulator (AOM) 22, which functions selectively as a Bragg angle controllable attenuator or a light shutter.
- AOM attenuator 22 produces an attenuator output beam 24 that constitutes an attenuated version of laser output beam 16.
- AOM attenuator 22 is used to form from laser output beam 16 a working laser beam 12 of reduced power for use in scanning without changing the physical properties of specimen alignment targets in the form of multiple L-shaped 10 ⁇ m wide scan stripes 30.
- FIGS. 2A and 2B show with different image magnifications alignment targets on work surface 14 of a semiconductor wafer.
- the alignment targets are composed of L-shaped scan stripes 30, each having segments in the x- and y-axis scan directions. Incident scanning light reflected by scan stripes 30 is detected and provides alignment information relating to the specimen.
- a scanning operation is accomplished by imparting relative movement between scan stripes 30 and working laser beam 12 of reduced power.
- Configuring system 10 to perform a scanning operation entails expanding attenuator output beam 24 by a variable beam expander 34 and directing its output to a beamsplitter 40.
- a scanning component propagating along a beam path segment 42 from beamsplitter 40 is converged by a focus lens 44 to form working beam 12 of reduced power.
- Working beam 12 functioning as scanning light is reflected by stripes 30 and propagates back through focus lens 44 to reflect off of beamsplitter 40 and form a detection component propagating along a beam path segment 46 for incidence on a detector module 50.
- AOM attenuator 22 to laser output beam 16 of Gaussian beam intensity distribution or profile resulted in increasing distortion of the scanning light reflected by scan stripes 30 and detected by detector module 50.
- Figs. 3A-1 , 3A-2, 3B-1 , 3B-2, 3C-1 , 3C-2, 3D-1 , and 3D-2 show the impact of increasing attenuation of laser output beam 16 on the reflected scanning light.
- Figs. 3A-1 and 3A-2 show respective x- and y-axis scans of scan stripes 30 at minimum attenuation (maximum transmission), which was set just below the target material damage threshold.
- Figs. 3D-1 and 3D-2 show the respective x- and y-axis scans of scan stripes 30 at maximum attenuation (minimum transmission), which was set by the detection sensitivity limit of detector module 50.
- Figs. 3B-1 and 3C-1 and Figs. 3B-2 and 3C-2 show respective x- and y-axis scans of scan stripes 30 at mid-range attenuation amounts equally spaced between the attenuation amounts represented by Figs.
- Figs. 3A-1 , 3B-1 , 3C-1 , and 3D-1 show, in response to increasing amounts of attenuation of working laser beam 12, progressive distortion of the reflected light pulses produced by x-axis alignment target scans.
- Fig. 3A-1 shows a reflected light pulse 60 with distortion introducing a -0.008 ⁇ m x-axis offset
- Fig. 3B-1 shows a reflected light pulse 62 with distortion introducing a -0.007 ⁇ m x-axis offset
- Fig. 3C-1 shows a reflected light pulse 64 with a distortion introducing a +0.010 ⁇ m x-axis offset
- Fig. 3D-1 shows a reflected light pulse 66 with distortion introducing a +0.0165 ⁇ m x-axis offset.
- Figs. 3A-2, 3B-2, 3C-2, and 3D-2 show, in response to increasing amounts of attenuation of working laser beam 12, progressive distortion of the reflected light pulses produced by y-axis alignment target scans.
- Fig. 3A-2 shows a reflected light pulse 70 with distortion introducing a -0.141 ⁇ m y-axis offset
- Fig. 3B-2 shows a reflected light pulse 72 with distortion introducing a -0.169 ⁇ m y-axis offset
- Fig. 3C-2 shows a reflected light pulse 74 with distortion introducing a -0.285 ⁇ m y-axis offset
- Fig. 3D-2 shows a reflected light pulse 76 with distortion introducing a -8.722 ⁇ m y-axis offset.
- Asymmetry and offset of the reflected light pulses introduce alignment errors because algorithms implemented in detector module 50 are formulated to process a symmetrical, centered input pulse waveform.
- Analysis of the above- described drawing figures reveals that, for increasing amounts of attenuation, distortion of reflected light pulses 70, 72, 74, and 76 relating to y-axis scanning is more pronounced than that of reflected light pulses 60, 62, 64, and 66 relating to x-axis scanning.
- Such beam-to-work (BTW) scan quality problems arise with large attenuator output beam 24 spot sizes and high attenuation.
- Applicants traced the BTW scan quality problems to the presence of a stray low-intensity beam that is not affected by AOM attenuator 22.
- the stray beam is almost coincident with the primary scanning beam, usually exactly coincident in the x axis and slightly off-center in the y axis.
- the intensity of the stray beam is sufficient to cause alignment errors when scanning alignment targets.
- Sources of the stray beam are the optical components with which the laser beam comes into contact.
- Lasers operating at their harmonic wavelengths suffer mode quality degradation resulting from nonlinear optics used.
- Lasers implementing harmonic generation to achieve shorter wavelengths cannot be focused to a corresponding theoretically possible small spot size because of mode quality degradation resulting from superposition of scattered light (Ae., stray beam) on the Gaussian main beam.
- Superposition of scattered light also impedes measurement of the actual spot size of a laser beam, thereby resulting in a measurement of only a perceived laser spot size.
- Fig. 4 is a block diagram of a laser link processing system 100 configured to carry out a preferred method of suppressing distortion of a working laser beam 12' that is incident on work surface 14 of a target specimen.
- Fig. 4 differs from Fig. 1 only in that a spatial and beam expander assembly ("spatial filter assembly") 102 is provided in a beam path 104 between AOM attenuator 22 and variable beam expander 34.
- Figs. 1 and 4 are identified by common reference numerals initially given with reference to Fig. 1.
- Fig. 5 is a diagram showing in cross-section spatial filter assembly 102 receiving as incident light the attenuator output beam 24 and a stray light beam 106.
- spatial filter assembly 102 positioned in beam path 104 removes or appreciably reduces the impact of stray beam 106 and any satellites because they focus to higher spatial frequencies than the frequency of attenuator output beam 24.
- Spatial filter assembly 102 includes an aperture 108 positioned between a focus lens 110 having focal length, f 1 ( and a collimating lens 112 having a focal length, h- Aperture 108 has an orifice 114 of diameter, d, surrounded by an opaque region 116.
- Aperture 108 is set at or near a focal region 118 of f i (Ae., the Fourier transform plane), establishing the beam waist of attenuator output beam 24.
- the proximity of placement of aperture 108 is established by that which provides adequate separation between attenuator output beam 24 and stray light beam 106 to pass the former and block the latter.
- Orifice 114 may be symmetrical about or offset from beam path 104, depending on the location of the higher spatial frequency orders of light that is to be blocked.
- Attenuator output beam 24 focused by focus lens 110 exhibits at focal region 118 a sufficiently small spot size that approaches the diffraction limit (Ae., less than two wavelengths) of attenuator output beam 24.
- Spatial filter assembly 102 focuses light downwardly away from orifice 114, using opaque region 116 of aperture 108 to block the higher spatial frequency effects and allow the Gaussian attenuator output beam 24 to pass unobstructed.
- aperture 108 may be slightly changed to block more of the light of attenuator output beam 24 and thereby allow only a central portion of the Gaussian beam to propagate.
- Focus lens 110 converges attenuator output beam 24 for propagation through orifice 114 of aperture 108 and stray light beam 106 downwardly for blockage by opaque region 116.
- Collimating lens 112 expands the attenuator output beam 24 from its formed beam waist, which beam 24 propagates for incidence on variable beam expander 34.
- Figs. 6A-1 , 6A-2, 6B-1 , 6B-2, 6C-1 , 6C-2, 6D-1 , and 6D-2 and their corresponding respective Figs. 3A-1 , 3A-2, 3B-1 , 3B-2, 3C-1 , 3C-2, 3D-1 , and 3D-2 provide a comparative relationship of the reflected scanning light developed in laser link processing systems 10 and 100. (Identical letter suffices correspond to the same amounts of attenuation, and identical numerical suffices correspond to the same scan axis directions.) Reflected light pulses 160, 162, 164, and 166 of Figs.
- 6A-1 , 6B-1 , 6C-1 , and 6D-1 introduce, respectively, -0.006 ⁇ m, -0.035 ⁇ m, -0.026 ⁇ m, and -0.082 ⁇ m x-axis offsets.
- Reflected light pulses 170, 172, 174, and 176 of Figs. 6B-1, 6B-2, 6B-3, and 6B-4 introduce, respectively, +0.120 ⁇ m, +0.054 ⁇ m, +0.113 ⁇ m, and +0.009 ⁇ m y-axis offsets.
- Comparison of the corresponding x-axis and y-axis offsets reveals that the presence of spatial filter assembly 102 provides significant beam quality improvement in the operation of system 100.
- Removing the abnormalities from attenuator output beam 24 can suppress from working laser beam 12' the negative effects induced by shorter wavelength lasers to link processing by increasing the signal-to-noise ratio on BTW scans, eliminating exposure effects during idle times (stray light can anneal target surface), and eliminating noise in a Gaussian beam intensity profile to allow smaller and more symmetrical focused spots of working laser beam 12'. Removing such abnormalities also provides actual laser spot size measurement of greater accuracy.
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
Claims
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008521562A JP5225083B2 (en) | 2005-07-15 | 2006-07-11 | Method of suppressing processing laser beam distortion in a laser link processing system |
| GB0802259A GB2442677B (en) | 2005-07-15 | 2006-07-11 | Method of suppressing distortion of a working laser beam of a laser link processing system |
| CN2006800259039A CN101223628B (en) | 2005-07-15 | 2006-07-11 | Method of suppressing distortion of a working laser beam of a laser link processing system |
| DE112006001869T DE112006001869T5 (en) | 2005-07-15 | 2006-07-11 | A method of suppressing the distortion of a working laser beam of a laser link processing system |
| KR1020087000730A KR101266177B1 (en) | 2005-07-15 | 2008-01-10 | Method of suppressing distortion of a working laser beam of a laser link processing system |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US70003105P | 2005-07-15 | 2005-07-15 | |
| US60/700,031 | 2005-07-15 | ||
| US11/440,696 US7423818B2 (en) | 2005-07-15 | 2006-05-24 | Method of suppressing distortion of a working laser beam of a laser link processing system |
| US11/440,696 | 2006-05-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2007011604A1 true WO2007011604A1 (en) | 2007-01-25 |
Family
ID=37660728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2006/027032 Ceased WO2007011604A1 (en) | 2005-07-15 | 2006-07-11 | Method of suppressing distortion of a working laser beam of a laser link processing system |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7423818B2 (en) |
| JP (1) | JP5225083B2 (en) |
| KR (1) | KR101266177B1 (en) |
| CN (1) | CN101223628B (en) |
| DE (1) | DE112006001869T5 (en) |
| GB (1) | GB2442677B (en) |
| TW (1) | TWI366492B (en) |
| WO (1) | WO2007011604A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102021112833A1 (en) | 2021-05-18 | 2022-11-24 | Precitec Gmbh & Co. Kg | Aperture for a laser processing head |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7616669B2 (en) * | 2003-06-30 | 2009-11-10 | Electro Scientific Industries, Inc. | High energy pulse suppression method |
| US8178818B2 (en) * | 2008-03-31 | 2012-05-15 | Electro Scientific Industries, Inc. | Photonic milling using dynamic beam arrays |
| US9080991B2 (en) * | 2008-09-29 | 2015-07-14 | Kla-Tencor Corp. | Illuminating a specimen for metrology or inspection |
| KR101652133B1 (en) | 2008-09-29 | 2016-08-29 | 케이엘에이-텐코어 코오포레이션 | Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements |
| US8031414B1 (en) * | 2009-04-24 | 2011-10-04 | Jefferson Science Associates, Llc | Single lens laser beam shaper |
| DE112012002844T5 (en) | 2011-07-05 | 2014-04-24 | Electronic Scientific Industries, Inc. | Method for laser processing with a thermally stabilized acousto-optical beam deflector and thermally stabilized high-speed laser processing system |
| JP6193305B2 (en) | 2014-07-29 | 2017-09-06 | ウルトラテック インク | High performance line forming optical system and method |
| DE102016120244A1 (en) * | 2016-10-24 | 2018-04-26 | Cl Schutzrechtsverwaltungs Gmbh | Device for the additive production of three-dimensional objects |
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| EP0082404A1 (en) * | 1981-12-21 | 1983-06-29 | Merck & Co. Inc. | Novel forms of diflunisal and related compounds |
| US5642183A (en) * | 1993-08-27 | 1997-06-24 | Sharp Kabushiki Kaisha | Spatial filter used in a reduction-type projection printing apparatus |
| US6178045B1 (en) * | 1997-05-29 | 2001-01-23 | Corning Incorporated | Spatial filter for high power laser beam |
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| DE2146729A1 (en) * | 1971-09-18 | 1973-03-22 | Philips Patentverwaltung | METHOD AND ARRANGEMENT FOR MULTIPLE FILTRATION |
| JPS63230284A (en) * | 1987-03-18 | 1988-09-26 | Nec Corp | Laser trimming device |
| JPH026089A (en) * | 1988-06-21 | 1990-01-10 | Matsushita Electric Ind Co Ltd | Laser trimming device |
| JP2599439B2 (en) * | 1988-08-25 | 1997-04-09 | 松下電器産業株式会社 | Laser trimming device and trimming method |
| US5020111A (en) * | 1988-10-14 | 1991-05-28 | The United States Of America As Represented By The Secretary Of The Army | Spatial symmetry cueing image processing method and apparatus |
| JP2799080B2 (en) * | 1991-03-18 | 1998-09-17 | 株式会社日立製作所 | Laser processing method and apparatus, transmission type liquid crystal element, wiring pattern defect correcting method and apparatus |
| JP3141715B2 (en) * | 1994-12-22 | 2001-03-05 | 松下電器産業株式会社 | Laser processing method |
| JP3216987B2 (en) * | 1996-03-15 | 2001-10-09 | 三菱電機株式会社 | Laser transfer processing apparatus and laser transfer processing method |
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-
2006
- 2006-05-24 US US11/440,696 patent/US7423818B2/en active Active
- 2006-07-11 CN CN2006800259039A patent/CN101223628B/en not_active Expired - Fee Related
- 2006-07-11 JP JP2008521562A patent/JP5225083B2/en not_active Expired - Fee Related
- 2006-07-11 WO PCT/US2006/027032 patent/WO2007011604A1/en not_active Ceased
- 2006-07-11 DE DE112006001869T patent/DE112006001869T5/en not_active Withdrawn
- 2006-07-11 GB GB0802259A patent/GB2442677B/en not_active Expired - Fee Related
- 2006-07-13 TW TW095125647A patent/TWI366492B/en not_active IP Right Cessation
-
2008
- 2008-01-10 KR KR1020087000730A patent/KR101266177B1/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0082404A1 (en) * | 1981-12-21 | 1983-06-29 | Merck & Co. Inc. | Novel forms of diflunisal and related compounds |
| US5642183A (en) * | 1993-08-27 | 1997-06-24 | Sharp Kabushiki Kaisha | Spatial filter used in a reduction-type projection printing apparatus |
| US6178045B1 (en) * | 1997-05-29 | 2001-01-23 | Corning Incorporated | Spatial filter for high power laser beam |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102021112833A1 (en) | 2021-05-18 | 2022-11-24 | Precitec Gmbh & Co. Kg | Aperture for a laser processing head |
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| Publication number | Publication date |
|---|---|
| US7423818B2 (en) | 2008-09-09 |
| DE112006001869T5 (en) | 2008-05-15 |
| GB0802259D0 (en) | 2008-03-12 |
| JP2009501088A (en) | 2009-01-15 |
| KR20080026163A (en) | 2008-03-24 |
| TW200709882A (en) | 2007-03-16 |
| US20070012667A1 (en) | 2007-01-18 |
| CN101223628B (en) | 2012-03-28 |
| JP5225083B2 (en) | 2013-07-03 |
| KR101266177B1 (en) | 2013-05-21 |
| GB2442677A (en) | 2008-04-09 |
| TWI366492B (en) | 2012-06-21 |
| CN101223628A (en) | 2008-07-16 |
| GB2442677B (en) | 2011-02-09 |
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