WO2007007239A2 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- WO2007007239A2 WO2007007239A2 PCT/IB2006/052264 IB2006052264W WO2007007239A2 WO 2007007239 A2 WO2007007239 A2 WO 2007007239A2 IB 2006052264 W IB2006052264 W IB 2006052264W WO 2007007239 A2 WO2007007239 A2 WO 2007007239A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- die
- surface portion
- attachment surface
- die pad
- downbond
- Prior art date
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H01L2924/01078—Platinum [Pt]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/15165—Monolayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/183—Connection portion, e.g. seal
- H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
Definitions
- the present invention relates in general to semi-conductor devices of a type wherein a semi-conductor chip is mounted in a plastic package.
- Figure 1 shows a schematic cross- section of a semi-conductor device 1.
- the device comprises a semi-conductor chip 2, also indicated as “die”, with an integrated circuit (not shown).
- the device further comprises a conductive leadframe 10, typically made of a metal such as copper, the leadframe 10 comprising a centrally located die pad 11 and a plurality of internal leads 12 (of which only two are visible in the cross-section of Figure 1).
- the die 2 is attached to the die pad 11 through an adhesive 3, which typically is an electrically and/or thermally conductive adhesive.
- the die pad 11 has a quadrangular, usually even square shape. Different embodiments may have different sizes; in one typical example, the semi-conductor device 1 has a size of 7 mm x 7 mm, in which case the die pad 11 has a size of 5 mm x 5 mm.
- the integrated circuit of the die 11 has contact terminals in its surface directed away from the die pad 11, which contact terminals (not shown) are connected to respective leads 12 via respective wire bonds 4, i.e. thin wires, for instance gold wires, having one end attached to a lead 12 and having the other end attached to the die 2.
- the leads 12 provide input and/or output terminals for the device 1, to receive or provide input signals or output signals. Since the use of such bonds is known per se, and methods for attaching such bonds to the leads and the die are known per se, it is not necessary here to explain such methods in greater detail.
- the integrated circuit of the die 11 further has contact terminals which are connected to the die pad 11 via respective wire bonds 5; these wire bonds, connecting the die 2 to the die pad 11, are indicated as "downbonds".
- the assembly of leadframe 10, die 2 and bonds 4 and 5 is encapsulated in a plastic molded package 6.
- the leadframe 10 is fully surrounded by plastic.
- the device 1 of Figure 1 has its leadframe 10 exposed, i.e. the leadframe 10 has a surface 14 available for electrical and thermal contact to the outside world; in the following, this surface, which is directed away from the die 2, will be indicated as bottom surface 14, while the opposite surface will be indicated as top surface 15.
- the die pad 11 has in its bottom surface 14 an undercutting 16A, also indicated as "half etch", has extending along the edges of the die pad 11, for a better engagement between plastic 6 and die pad 11.
- the leads 12 typically have in their bottom surface 14 an undercutting 16B.
- the present invention relates specifically, although not exclusively, to an exposed leadframe package. It has been found that the downbonds are very vulnerable, and failure of the downbonds has been observed frequently, while already one failure leads to reject of the entire device. According to the invention, two mechanisms are probably responsible for failing of the downbonds, as will be explained in the following.
- the process for manufacturing such device 1 comprises the steps of assembling the die 2 to the leadframe 10, applying the standard wirebonds 4 and the downbonds 5, and then applying the plastic compound 6.
- the plastic compound 6 is applied in a molten state, i.e. at an elevated temperature, and needs to cool down, leading to mechanical stresses due to the thermal expansion coefficient of the plastic. Further, during its lifetime, the device 1 may be subjected to further temperature cycles, also leading to mechanical stresses.
- Figure 2 on a larger scale, illustrates two mechanisms that are considered to be probably responsible for a large percentage of the failure of the downbonds 5.
- the plastic may directly exert forces on the downbond wires 5.
- delamination may occur at the interface between die 2 and die pad 11, and this delamination, which may be considered as a creeping crack, may increase along the top surface 15 of the die pad 11, as indicated at 23.
- a downbond 5 may break (metal fatigue, and/or tear), as indicated at 24.
- the present invention aims to improve the design of a semi-conductor device such that the chances on failure of the downbonds are greatly reduced.
- the top surface 15 of the die pad 11 is entirely flat, i.e. extends in one plane over its entire extent.
- the top surface 15 of the die pad 11 has portions located at different levels, and substantially step-shaped transitions between two adjacent ones of such portions, at least one of such step-shaped transition being located between the die 2 and the downbonds 5. It has been found that such step-shaped transition provides good protection against downbond failure.
- the die pad has one or more recesses, more preferably shaped as a longitudinal groove parallel to its side edges, at a location between the die and the downbonds, such recesses being entirely filled with the plastic material of the package.
- US patent 6.569.755 discloses a semi-conductor device where a die pad has a groove at a location between the downbonds and the edge of the pad, the groove being filled with silicone. Such design does not protect the downbonds against delaminations creeping outwards from the die, and diminishes the mutual engagement between die pad and plastic. Further, the filling of silicone requires an additional process step. It is noted that US patent 6.545.347 discloses a semi-conductor device where the downbonds are not connected to the die pad but to a separate ring that is arranged around the die pad and at its corners is connected to the die pad mechanically and electrically.
- Fig. 1 schematically shows a cross-section of a prior art semi-conductor device
- Fig. 2 schematically shows a detail of the prior art semi-conductor device of Fig. 1 to illustrate downbond failure
- Figs. 3-8 are schematic views comparable to Fig. 2, showing details of embodiments of the present invention.
- Figs. 3 A and 3B are schematic top views of embodiments of a die pad.
- Figure 3 is a view comparable to Figure 2, illustrating a detail (not to scale) of a preferred embodiment of semi-conductor device 100 according to the present invention.
- undercutting 16 is not shown for sake of simplicity, but such undercutting will preferably be present, indeed.
- the leadframe 10 is made starting from a standard solid flat strip of a predetermined thickness, typically approximately 0.2 mm. In this strip, an array of leadframes is formed by etching; in a later stage, the individual leadframes are separated from each other by a sawing process.
- the top surface 15 of the die pad 11 has a first top surface portion 31 where the die 2 is mounted, and a second top surface portion 32 where the down bonds 5 are attached.
- the first top surface portion 31, which will also be indicated as die attachment surface portion, is a central portion of the top surface 15, while the second top surface portion 32, which will also be indicated as downbond attachment surface portion, extends along the side edges 33 of the die pad 11.
- a groove 34 is formed in the top surface 15, having a bottom 35 at a level lower than the top surface 15.
- the groove 34 has a longitudinal direction extending preferably substantially parallel to the side edges 33 of the die pad 11, i.e. perpendicular to the plane of drawing.
- the groove 34 is filled entirely with plastic 6.
- the groove 34 is preferably formed by an etching process, etching to a depth corresponding to only a part of the thickness of the die pad. This etching step can be combined with the above-mentioned etching process that forms the leadframe out of "solid" strip material, so the costs of manufacturing the groove are minimal. It is noted that the etching process leaves the flatness of the bottom surface 14 of the leadframe 10 unaffected, in contrast to, for instance, a punching process.
- the width of the groove is not critical, but will in practice be limited by the available space between the die 2 and the bonds 5. In a suitable experimental embodiment, the groove 34 has a width of approximately 0.15 mm.
- the depth of the groove is not critical. However, the groove should not be too shallow, because then its effect might be less adequate, while also it should not be too deep because then the risk increases that the groove penetrates the die pad 11.
- the groove 34 has a depth of approximately 0.12 mm.
- the groove 34 preferably has a depth approximately half the thickness of the die pad 11, and a width approximately equal to or somewhat larger than the depth.
- the groove 34 is shown as having a substantially rectangular contour. Since the groove is preferably etched out of the die pad material, the actual shape will deviate somewhat from exactly rectangular, but the exact shape is not critical.
- the groove 34 defines a first stepwise transition 36 between the die attachment surface portion 31 and the bottom 35 of the groove, and a second stepwise transition 37 between the bottom 35 and the downbond attachment surface portion 32.
- This first stepwise transition 36 prevents a delamination 22 (see Figure 2) originating from the die area from reaching the downbond area. Further, the interlocking arrangement of the plastic 6 engaging in the groove 34 reduces the magnitude of stresses acting on the downbonds 5. As a result, the downbonds 5 are less likely to fail.
- Figure 3 A is a schematic top view of the die pad 11, wherein the position of the die 2 is indicated in broken lines.
- the groove 34 preferably has the shape of a continuous, endless square loop that is closed in itself, extending around the die attachment surface portion 31.
- the groove 34 comprises an assembly of four longitudinal grooves 34A, 34B, 34C, 34D, each extending parallel to a corresponding side edge of the die pad, the individual longitudinal grooves not being connected to each other.
- a longitudinal groove is replaced by a series of recesses, preferably aligned with each other. Each of such recesses may have an elongated shape, but they may also be square, circular, etc. At least one such recess already provides an improvement in accordance with the invention, but preferably the series of recesses extend along the entire collection of leads 12.
- Figure 4 illustrates a detail of an embodiment 200 of a semi-conductor device, as a variation of the embodiment 100 of Figure 3.
- two mutually parallel grooves 41 and 42 are formed in the region between the die attachment surface portion 31 and the downbond attachment surface portion 32.
- a first groove 41 has side walls 43, 44 and a bottom 47
- a second groove 42 has side walls 45, 46 and a bottom 48, said bottoms 47, 48 being located at a level differing from the level of the die attachment surface portion 31.
- four stepwise transitions 43, 44 and 45, 46 are defined by the walls of said two grooves 41, 42.
- Figure 5 illustrates a detail of an embodiment 300 of a semi-conductor device, as a variation of the embodiment 100 of Figure 3.
- a first groove 51 is formed in the region between the die attachment surface portion 31 and the downbond attachment surface portion 32
- a second groove 52 is formed in the region between the downbond attachment surface portion 32 and the corresponding side edge 33 of the die pad 11.
- a first groove 51 has side walls 53, 54 and a bottom 57
- a second groove 52 has side walls 55, 56 and a bottom 58, said bottoms 57, 58 being located at a level differing from the level of the die attachment surface portion 31.
- two stepwise transitions 53, 54 are defined by the walls of said first groove 51 between the die attachment surface portion 31 and the downbond attachment surface portion 32; in this respect, the first groove 51 corresponds to groove 34 of Figure 3.
- two stepwise transitions 55, 56 are defined by the walls of said second groove 52 in the region between the downbond attachment surface portion 32 and the side edge 33.
- This second groove 52 provides further increased mechanical coupling between die pad 11 and plastic 6, and also provides protection against delamination originating at the side edge 33.
- Figure 6 illustrates a detail of an embodiment 400 of a semi-conductor device, as a variation of the embodiment 100 of Figure 3.
- a ridge 61 is formed on the top surface 15 of the die pad 11.
- the final shape of the die pad 11 is obtained by starting from plate material having the normal standard thickness and etching away the die attachment surface portion 31 and the downbond attachment surface portion 32 until a certain depth, leaving the top surface 62 of the ridge 61 at the original height.
- the ridge 61 may extend as a closed loop around the die 2, or the ridge 61 may comprise a series of elevated portions.
- two parallel ridges may be present in the region between the die attachment surface portion 31 and the downbond attachment surface portion 32 (not shown). Also, a second ridge may be present in the region between the downbond attachment surface portion 32 and the side edge 33 of the die pad 11 (not shown).
- the ridge 61 defines a first stepwise transition 63 between the die attachment surface portion 31 and the top 62 35 of the ridge, and a second stepwise transition 64 between the top 62 and the downbond attachment surface portion 32.
- This first stepwise transition 63 prevents a delamination 22 (see Figure 2) originating from the die area from reaching the downbond area.
- the interlocking arrangement of the ridge 61 engaging in the plastic 6 reduces the magnitude of stresses acting on the downbonds 5. As a result, the downbonds 5 are less likely to fail.
- the number of stepwise transitions is always even, as a groove or a ridge always have two opposite walls defining such transitions.
- the number of stepwise transitions is odd, and this number may even be equal to one.
- the region between die attachment surface portion 31 and downbond attachment surface portion 32 may not be large enough for making a groove or a ridge.
- Figures 7 and 8 illustrate details of embodiment 500 and 600, respectively, as variations of the embodiment 100 of Figure 3.
- the downbond attachment surface portion 32 is out-of-plane with the die attachment surface portion 31, i.e. the downbond attachment surface portion 32 is located at a level differing from the level of the die attachment surface portion 31. More particularly, in embodiment 500, the downbond attachment surface portion 32 is located at a lower level than the die attachment surface portion 31, preferably as a result of the downbond attachment surface portion 32 being etched away until a desired depth.
- a stepwise transition 71 is defined between the level of the die attachment surface portion 31 and the level of the downbond attachment surface portion 32, or, more generally, between the level of the die attachment surface portion 31 and the level of a third surface portion 72 which, here, is level with the downbond attachment surface portion 32.
- This stepwise transition 71 has the same effect as described above for first stepwise transition 36 of embodiment 100.
- the downbond attachment surface portion 32 is located at a higher level than the die attachment surface portion 31, preferably as a result of the die attachment surface portion 31 being etched away until a desired depth.
- a stepwise transition 81 is defined between the level of the die attachment surface portion 31 and the level of the downbond attachment surface portion 32, or, more generally, between the level of the die attachment surface portion 31 and the level of a third surface portion 82 which, here, is level with the downbond attachment surface portion 32.
- This stepwise transition 81 has a similar effect as described above for first stepwise transition 36 of embodiment 100. It should be clear to a person skilled in the art that the present invention is not limited to the exemplary embodiments discussed above, but that several variations and modifications are possible within the protective scope of the invention as defined in the appending claims.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
Abstract
Description
Claims
Priority Applications (4)
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CN2006800246698A CN101218673B (en) | 2005-07-08 | 2006-07-05 | Semiconductor device |
JP2008520045A JP2009500841A (en) | 2005-07-08 | 2006-07-05 | Semiconductor device |
US11/994,903 US7838973B2 (en) | 2005-07-08 | 2006-07-05 | Semiconductor device |
EP06766009A EP1905077B1 (en) | 2005-07-08 | 2006-07-05 | Semiconductor device |
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EP05106260.2 | 2005-07-08 | ||
EP05106260 | 2005-07-08 |
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WO2007007239A3 WO2007007239A3 (en) | 2007-03-29 |
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PCT/IB2006/052264 WO2007007239A2 (en) | 2005-07-08 | 2006-07-05 | Semiconductor device |
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US (1) | US7838973B2 (en) |
EP (1) | EP1905077B1 (en) |
JP (1) | JP2009500841A (en) |
KR (1) | KR20080027920A (en) |
CN (1) | CN101218673B (en) |
TW (1) | TW200707665A (en) |
WO (1) | WO2007007239A2 (en) |
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US10720379B2 (en) | 2018-12-19 | 2020-07-21 | Cree, Inc. | Robust integrated circuit package |
US10886198B2 (en) | 2018-12-19 | 2021-01-05 | Cree, Inc. | Robust electronics mounting device |
Also Published As
Publication number | Publication date |
---|---|
EP1905077B1 (en) | 2012-05-23 |
US20090152696A1 (en) | 2009-06-18 |
EP1905077A2 (en) | 2008-04-02 |
KR20080027920A (en) | 2008-03-28 |
CN101218673A (en) | 2008-07-09 |
TW200707665A (en) | 2007-02-16 |
US7838973B2 (en) | 2010-11-23 |
JP2009500841A (en) | 2009-01-08 |
WO2007007239A3 (en) | 2007-03-29 |
CN101218673B (en) | 2011-09-28 |
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