CN101989586B - Metal terminal and construction method thereof - Google Patents
Metal terminal and construction method thereof Download PDFInfo
- Publication number
- CN101989586B CN101989586B CN 200910055835 CN200910055835A CN101989586B CN 101989586 B CN101989586 B CN 101989586B CN 200910055835 CN200910055835 CN 200910055835 CN 200910055835 A CN200910055835 A CN 200910055835A CN 101989586 B CN101989586 B CN 101989586B
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- China
- Prior art keywords
- connection end
- metal connection
- metallic copper
- microns
- metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention discloses a metal terminal, which is made from a layer of non-copper metal materials covered on the inner wall of the groove structure of a metal copper frame. The opening of the metal terminal is polygonal; and at least one edge of the metal terminal is 10-200 microns higher than the surface of the metal copper frame. The invention also discloses another metal terminal and a construction method thereof. By the invention, the binding firmness between an integrated circuit block and a printed circuit board can be improved.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology field, particularly a kind of metal connection end and building method thereof.
Background technology
After the Computer-Assisted Design, Manufacture And Test technology of accomplishing all silicon chips; Chip is by being separated from silicon chip, and be assembled to IC device shell (Bump Chip Carrier, BCC) in; With the metal pressure point and lead frame that chip electric pathway be provided inner interconnection of thin plain conductor with chip surface; The shell that BCC is exposed in the outer end of lead-in wire becomes pin, and packaged chip and BCC thereof become integrated circuit block, and carry out surface mounted to integrated circuit block; Make its fixed printed circuit board (Printed Circuit Board, PCB) on.
Fig. 1 is the cross sectional representation of integrated circuit block of the prior art.Silicon chip 101 is fixed on the metallic copper framework through adhesive layer 102.There is groove structure on metallic copper framework surface around silicon chip 101, and the opening of this groove structure is a polygon, in most cases is rectangle, is pentagon or other polygons under few cases.Inner wall surface at said groove covers other metals of one deck, and this metal should have chemical stability and the conductivity stronger than copper, for example can be gold or silver.This one deck metal is as metal connection end 104.Therefore, the opening of metal connection end 104 is identical with the opening of aforementioned groove interface.One end of lead 103 connects silicon chip 101, and the other end is welded on the metal connection end 104.Plastic layer 105 covers the surface of metallic copper framework, and wraps silicon chip 101, adhesive layer 102, lead 103 and terminals 104, makes above-mentioned parts and air isolated.
And the encapsulation process of chip is shown in Fig. 2 a to Fig. 2 c.At first; On the metallic copper framework, construct groove; At said trench wall plated metal terminals 104; Shown in Fig. 2 a,, require the bottom of metal connection end 104 to be at least 50 microns apart from the surperficial distance of metallic copper framework in order to guarantee to have enough adhesion intensity between metal terminals 104 and the metallic copper framework.Then silicon chip 101 is fixed on the metallic copper framework through adhesive layer 102, an end of lead 103 connects silicon chip 101, and the other end is welded on the terminals 104, shown in Fig. 2 b.To the plastics of silicon chip 101 region pouring molten states, plastics all wrap silicon chip 101, adhesive layer 102, lead 103 and terminals 104, and plastics solidify the back and form plastic layer 105, shown in Fig. 2 c.
Integrated circuit block can be fixed on the PCB, and what mainly rely on is the adhesion between terminals 104 and the PCB.The transportation and after processing technology in; Integrated circuit block may receive a certain size the external force along metallic copper framework terminals 104 and PCB mating surface direction; And this may cause integrated circuit block loosening, even can have influence on the fastness that is connected between lead 103 and the terminals 104.
Summary of the invention
In view of this, the objective of the invention is to, propose a kind of metal connection end and building method thereof, can improve the firm degree that combines between integrated circuit block and the printed circuit board (PCB).
A kind of metal connection end that the embodiment of the invention proposes is made up of the metal material of the non-copper of one deck that metallic copper framework groove structure inwall covers; The opening of said metal connection end is a polygon, and the metal connection end has at least edge on one side to be higher than 10 microns to 200 microns on said metallic copper framework surface.
The plastic flow direction that melts in the said metal connection end margin that is higher than metallic copper framework surface and the Shooting Technique is parallel.
Identical with the height of the vertical metal connection end margin of the plastic flow direction that melts in the Shooting Technique with said metallic copper framework.
The distance on the bottom of said metal connection end and metallic copper framework surface is more than or equal to 50 microns.
The embodiment of the invention also proposes a kind of metal connection end; Said metal connection end is made up of the layer of metal material that metallic copper framework groove structure inwall covers; The opening of said metal connection end is a polygon; Said metallic copper framework has sunk structure with said metal connection end edges abut place at least on one side, said concave bottom and with it the difference in height of the metal connection end margin of adjacency be 10 microns to 200 microns.
Said sunk structure at the width of the metal connection end margin vertical direction of adjacency with it greater than 100 microns.
Parallel with the plastic flow direction that melts in the metal connection end margin of said sunk structure adjacency and the Shooting Technique.
Preferably, the distance between the bottom of said metal connection end and the said sunk structure bottom is more than or equal to 50 microns.
The embodiment of the invention also proposes a kind of building method of metal connection end, comprises the steps:
At metallic copper frame table surface construction groove structure, the opening of said groove structure is a polygon, and the metal material that covers the non-copper of one deck in the inner wall surface of said groove is as the metal connection end;
At metallic copper framework surface coated photoresist, photoresist is developed, remove photoresist with said metal connection end edges abut at least on one side;
With said photoresist is that mask carries out etching to said metallic copper framework;
Remove remaining photoresist.
It is said that said metallic copper framework is carried out etched depth is 10 microns to 200 microns.
The bottom that said metallic copper framework is etched part apart from the distance of the bottom of metal connection end more than or equal to 50 microns.
The width of said removed photoresist on the metal connection end margin vertical direction of adjacency with it is greater than 100 microns.
Can find out from above technical scheme, adopt the edge of the present invention program's metal connection end to give prominence to the surface of metallic copper framework, and be deep in the plastic layer.When plastic layer receives external force; Can produce the influence of offsetting a part of external force between the ledge of metal connection end and the plastic layer, thereby improve the firm degree that combines between integrated circuit block and the printed circuit board (PCB) along metallic copper framework surface direction and the pressure opposite with external force direction.
Description of drawings
Fig. 1 is the cross sectional representation of integrated circuit block of the prior art;
Fig. 2 a to Fig. 2 c is the chip packaging method sketch map of prior art;
Fig. 3 is the cross sectional representation of a kind of integrated circuit block of the embodiment of the invention;
Fig. 4 is two kinds of schematic cross-sections of the metal connection end of the embodiment of the invention;
Fig. 5 is the vertical view when the plastics of silicon chip region pouring molten state;
Fig. 6 is a kind of method flow diagram of constructing the metal connection end of the embodiment of the invention.
Embodiment
To the not enough problem of bonding force between metal connection end of the prior art and the plastic layer, scheme of the present invention is the structure that changes the metal connection end, makes that the adhesion between metal connection end and the plastic layer increases greatly.For making the object of the invention, technical scheme and advantage clearer, the present invention is done further to set forth in detail below in conjunction with accompanying drawing.
The cross section of a kind of integrated circuit block of the embodiment of the invention is as shown in Figure 3, locates shown in the wherein slightly black arrow, and the edge of metal connection end 104 stretches out the surface of metallic copper framework, and this jut gos deep into plastic layer 105.If plastic layer 105 receives along the external force of metallic copper framework surface direction; The influence of offsetting a part of external force can be produced between the ledge of metal connection end and the plastic layer, the firm degree that combines between integrated circuit block and the printed circuit board (PCB) will be significantly strengthened like this along metallic copper framework surface direction and the pressure opposite with external force direction.
Fig. 4 shows two kinds of schematic cross-sections of the metal connection end of the embodiment of the invention.Wherein the upper surface of the metallic copper framework of Fig. 4 (a) keeps smooth, and the critical dimension of this metal connection end structure is the difference in height A between the surface of edge and metallic copper framework of metal connection end.The scope of A should be 10 microns to 200 microns.And,, require the bottom of metal connection end 104 to be at least 50 microns apart from the surperficial distance of metallic copper framework in order to guarantee to have enough adhesion intensity between metal terminals 104 and the metallic copper framework.Among Fig. 4 (b); The surface height difference of the edge of metal connection end and metallic copper framework is 0; The metallic copper framework has a sunk structure in the place near the metal connection end; The difference in height C of the edge of metal connection end and this sunk structure bottom and the width B of this sunk structure are critical dimension, and wherein the scope of the scope of C and aforementioned critical dimension A is suitable, also is 10 microns to 200 microns; And the scope of B is greater than 100 microns.The span of B is not established the upper limit, and B is enough big if this is, the situation of Fig. 4 (b) just levels off to Fig. 4 (a).In order to guarantee to have enough adhesion intensity between metal terminals 104 and the metallic copper framework, require the bottom of metal connection end 104 to be at least 50 microns apart from metallic copper framework sunk structure distance from bottom.
Fig. 5 shows the vertical view when the plastics of silicon chip region pouring molten state.Because the present invention mainly is to the metal connection end, parts such as silicon chip, lead have therefore been saved.In vertical view, each metal connection end regions is with a rectangle frame or pentagon frame (pentagon can be regarded as the rectangle that has lacked an angle) expression, and the edge of metal connection end has constituted four limits of this rectangle.When watering injection molding material; The plastics of fusing always flow until covering silicon chip and metal connection end on every side thereof along certain direction (direction shown in arrow among Fig. 5); If four edges of metal connection end all are the surfaces of outstanding metallic copper framework; The plastics of fusing possibly be difficult to cross in the groove of this edge inflow metal connection end, thereby cover the tie point of lead and metal connection end.Therefore can optionally construct the metal connection end margin, make the edge parallel outstanding, in Fig. 5, represent with solid line with the plastic flow direction.A metal connection end has two edges parallel with the plastic flow direction, can only construct according to scheme of the present invention one of them edge, and it is consistent with prior art that another edge keeps.And vertical with plastic flow direction edge is non-outstanding as prior art, in Fig. 5, dots.
Fig. 6 shows a kind of method flow diagram of constructing the metal connection end of the embodiment of the invention, and this method is after the processing technology of prior art metal connection end, increases following steps:
Step 601: at metallic copper framework surface coated photoresist;
Step 602: photoresist is developed, remove photoresist with said metal connection end edges abut at least on one side.Preferably,, confirm the metal connection end margin parallel with said direction according to the flow direction of plastics in the Shooting Technique, removal the adjacent width in definite edge be B, the length photoresist identical with said edge.The value of B is greater than 100 microns.
Step 603: with said photoresist is mask, and said metallic copper framework is carried out etching, and etch depth is B.Etched reacting gas or liquid do not react with the metal that constitutes the metal connection end.Be generally gold or silver owing to constitute the metal of metal connection end, this condition is easy to satisfy.Preferably, the value of B is 10 microns to 200 microns.The bottom that said metallic copper framework is etched part apart from the distance of the bottom of metal connection end more than or equal to 50 microns.
Step 604: remove remaining photoresist.
Whether step 605: etching quality is checked adhere to specification comprising inspection each item critical size, passed examination is then accomplished this flow process.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (12)
1. metal connection end; One deck that said metal connection end is covered by metallic copper framework groove structure inwall constitutes than the chemical stability and the strong metal material of conductivity of copper; It is characterized in that; The opening of said metal connection end is a polygon, and the metal connection end has at least edge on one side to be higher than 10 microns to 200 microns on said metallic copper framework surface.
2. metal connection end according to claim 1 is characterized in that, the plastic flow direction that melts in the said metal connection end margin that is higher than metallic copper framework surface and the Shooting Technique is parallel.
3. metal connection end according to claim 2 is characterized in that, and is identical with said metallic copper framework with the height of the vertical metal connection end margin of the plastic flow direction that melts in the Shooting Technique.
4. according to each described metal connection end of claim 1 to 3, it is characterized in that the distance on the bottom of said metal connection end and metallic copper framework surface is more than or equal to 50 microns.
5. metal connection end; One deck that said metal connection end is covered by metallic copper framework groove structure inwall constitutes than the chemical stability and the strong metal material of conductivity of copper; It is characterized in that; The opening of said metal connection end is a polygon, and said metallic copper framework has sunk structure with said metal connection end edges abut place at least on one side, said concave bottom and with it the difference in height of the metal connection end margin of adjacency be 10 microns to 200 microns.
6. metal connection end according to claim 5 is characterized in that, said sunk structure at the width of the metal connection end margin vertical direction of adjacency with it greater than 100 microns.
7. metal connection end according to claim 5 is characterized in that, and is parallel with the plastic flow direction that melts in the metal connection end margin of said sunk structure adjacency and the Shooting Technique.
8. according to claim 5,6 or 7 described metal connection ends, it is characterized in that the distance between the bottom of said metal connection end and the said sunk structure bottom is more than or equal to 50 microns.
9. the building method of a metal connection end comprises the steps:
At metallic copper frame table surface construction groove structure, the opening of said groove structure is a polygon, the inner wall surface of said groove cover one deck than the strong metal material of the chemical stability of copper and conductivity as the metal connection end;
At metallic copper framework surface coated photoresist, photoresist is developed, remove photoresist with said metal connection end edges abut at least on one side;
With said photoresist is that mask carries out etching to said metallic copper framework;
Remove remaining photoresist.
10. method according to claim 9 is characterized in that, said said metallic copper framework is carried out etched depth is 10 microns to 200 microns.
11. method according to claim 10 is characterized in that, the bottom that said metallic copper framework is etched part apart from the distance of the bottom of metal connection end more than or equal to 50 microns.
12., it is characterized in that the width of said removed photoresist on the metal connection end margin vertical direction of adjacency with it is greater than 100 microns according to claim 9,10 or 11 described methods.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910055835 CN101989586B (en) | 2009-08-03 | 2009-08-03 | Metal terminal and construction method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910055835 CN101989586B (en) | 2009-08-03 | 2009-08-03 | Metal terminal and construction method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101989586A CN101989586A (en) | 2011-03-23 |
| CN101989586B true CN101989586B (en) | 2012-03-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910055835 Active CN101989586B (en) | 2009-08-03 | 2009-08-03 | Metal terminal and construction method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455348B1 (en) * | 1998-03-12 | 2002-09-24 | Matsushita Electric Industrial Co., Ltd. | Lead frame, resin-molded semiconductor device, and method for manufacturing the same |
| CN1666349A (en) * | 2002-06-26 | 2005-09-07 | 奥斯兰姆奥普托半导体有限责任公司 | Surface-mountable miniature light-emitting diode and/or photodiode and method for the production thereof |
| CN101218673A (en) * | 2005-07-08 | 2008-07-09 | Nxp股份有限公司 | Semiconductor device |
-
2009
- 2009-08-03 CN CN 200910055835 patent/CN101989586B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455348B1 (en) * | 1998-03-12 | 2002-09-24 | Matsushita Electric Industrial Co., Ltd. | Lead frame, resin-molded semiconductor device, and method for manufacturing the same |
| CN1666349A (en) * | 2002-06-26 | 2005-09-07 | 奥斯兰姆奥普托半导体有限责任公司 | Surface-mountable miniature light-emitting diode and/or photodiode and method for the production thereof |
| CN101218673A (en) * | 2005-07-08 | 2008-07-09 | Nxp股份有限公司 | Semiconductor device |
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| Publication number | Publication date |
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| CN101989586A (en) | 2011-03-23 |
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