CN101989586B - Metal terminal and construction method thereof - Google Patents

Metal terminal and construction method thereof Download PDF

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Publication number
CN101989586B
CN101989586B CN 200910055835 CN200910055835A CN101989586B CN 101989586 B CN101989586 B CN 101989586B CN 200910055835 CN200910055835 CN 200910055835 CN 200910055835 A CN200910055835 A CN 200910055835A CN 101989586 B CN101989586 B CN 101989586B
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Prior art keywords
metal
metal terminal
copper
frame
terminal
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CN 200910055835
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Chinese (zh)
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CN101989586A (en )
Inventor
吴波
曹程良
蔡丽燕
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中芯国际集成电路制造(上海)有限公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

The invention discloses a metal terminal, which is made from a layer of non-copper metal materials covered on the inner wall of the groove structure of a metal copper frame. The opening of the metal terminal is polygonal; and at least one edge of the metal terminal is 10-200 microns higher than the surface of the metal copper frame. The invention also discloses another metal terminal and a construction method thereof. By the invention, the binding firmness between an integrated circuit block and a printed circuit board can be improved.

Description

金属接线端及其构造方法 And the metal terminal construction method

技术领域 FIELD

[0001] 本发明涉及半导体集成电路制造技术领域,特别涉及一种金属接线端及其构造方法。 [0001] The present invention relates to a technical field of manufacturing a semiconductor integrated circuit, particularly to a metal terminal and its construction method.

背景技术 Background technique

[0002] 在完成所有硅片的制造和测试工艺后,芯片被从硅片上分离出来,并装配到集成电路管壳(Bump Chip Carrier, BCC)中,用细金属导线将芯片表面的金属压点和提供芯片电通路的引线框架内端互连,引线的外端露出BCC的外壳成为管脚,封装好的芯片及其BCC 成为集成电路块,并对集成电路块进行表面装贴,使其固定印刷电路板(Printed Circuit Board, PCB)上。 [0002] After completion of all manufacturing and testing process of the wafer, the chip is separated from the silicon wafer out of the envelope and fitted to the integrated circuit (Bump Chip Carrier, BCC), a thin metal wire with a metal chip surface is pressed providing the lead frame and the chip points electrical path interconnecting the end, the outer ends of the leads are exposed becomes BCC housing pin, a packaged integrated circuit chip and become BCC, and surface-mount integrated circuit, it fixing the printed circuit board (printed circuit board, PCB) on.

[0003] 图1为现有技术中的集成电路块的横截面示意图。 [0003] FIG. 1 is a schematic cross-section of a prior art circuit block. 硅片101通过粘合层102固定在金属铜框架上。 Wafer 102 is fixed by the adhesive layer 101 on a copper frame. 在硅片101周围的金属铜框架表面有沟槽结构,该沟槽结构的开口为多边形,多数情况下是矩形,在少数情况下是五边形或其他多边形。 There the frame surface around the wafer copper trench structure 101, the opening of the trench structure is polygonal, rectangular in most cases, in a few cases is a pentagonal or other polygonal shapes. 在所述沟槽的内壁表面覆盖一层其他金属,该金属应当具有比铜强的化学稳定性以及导电性,例如可以是金或者银。 Covered with a layer of metal on the other surface of the trench inner wall, the metal should have a stronger than copper, chemical stability, and conductivity, for example, gold or silver. 这一层金属作为金属接线端104。 This layer of metal as the terminal 104. 因此,金属接线端104的开口与前述沟槽接口的开口相同。 Thus, the same openings and the grooves of the interface of the metal terminal 104. 导线103的一端连接硅片101,另一端焊接在金属接线端104上。 One end of wire 103 is connected to the wafer 101, and the other end welded to the metal terminal 104. 塑料层105覆盖在金属铜框架的表面,并且包裹住硅片101、粘合层102、导线103以及接线端104,使上述部件与空气隔绝。 The plastic layer covers the surface of the copper metal frame 105, and the wafer wrap 101, the adhesive layer 102, wire 103 and terminal 104, so that the air isolation members.

[0004] 而芯片的封装过程如图加至图2c所示。 [0004] The process of the chip package shown in FIG added to 2c. 首先,在金属铜框架上构造出沟槽,在所述沟槽内壁沉积金属接线端104,如图加所示,为了保证金属接线端104与金属铜框架之间具有足够的结合力强度,要求金属接线端104的底部距金属铜框架表面的距离至少为50微米。 First, on a copper frame construction trenches, depositing a metal terminal 104 in the inner wall of the trench, as shown in FIG addition, in order to ensure the metal between the terminal 104 and the copper frame having a sufficient strength of the bond force required copper from the surface of the metal frame of the metal terminal 104 from the bottom of at least 50 microns. 然后将硅片101通过粘合层102固定在金属铜框架上,导线103的一端连接硅片101, 另一端焊接在接线端104上,如图2b所示。 Then the wafer 102 is fixed on the 101 copper frame, one end of the wire 103 is connected to the wafer 101 by the adhesive layer, and the other end is welded to the terminal 104, as shown in Figure 2b. 向硅片101所在区域浇注熔化状态的塑料,塑料将硅片101、粘合层102、导线103以及接线端104都包裹住,塑料凝固后形成塑料层105, 如图2c所示。 Pouring the molten state to the region where the wafer 101 plastic, plastic silicon wafer 101, the adhesive layer 102, wire 103 and terminal 104 are wrapped, the plastic layer 105 is formed after solidification of the plastic, shown in Figure 2c.

[0005] 集成电路块能够固定在PCB上,主要依靠的是接线端104与PCB之间的结合力。 [0005] The circuit block can be fixed to the PCB, it relies mainly on the binding force between the terminal 104 and the PCB. 在运输以及在后的加工工艺中,集成电路块可能会受到一定大小的沿着金属铜框架接线端104与PCB结合表面方向的外力,而这可能会导致集成电路块松动,甚至会影响到导线103 与接线端104之间连接的牢固性。 After the transportation and processing technology, the integrated circuit may be subject to external terminal 104 and the PCB along the binding surface direction of the metal copper frame of a certain size, which may cause loosening of the circuit block, even affect the wire firm connection between the terminals 103 and 104.

发明内容 SUMMARY

[0006] 有鉴于此,本发明的目的在于,提出一种金属接线端及其构造方法,可以提高集成电路块与印刷电路板之间结合的牢固程度。 [0006] In view of this, an object of the present invention is to provide a construction method and the metal terminal can be increased as strong bonding between the integrated circuit and the printed circuit board.

[0007] 本发明实施例提出的一种金属接线端由金属铜框架沟槽结构内壁覆盖的一层非铜的金属材料构成,所述金属接线端的开口为多边形,金属接线端至少有一边的边缘高于所述金属铜框架表面10微米至200微米。 [0007] A copper metal clamps comprises a metal frame covered with an inner wall of the trench structure of the copper layer of non-metallic material provided by the embodiments of the present invention constitutes the opening of the metal terminal is a polygon, a metal terminal having at least one side edge above the surface of the metallic copper frame 10 microns to 200 microns.

3[0008] 所述高于金属铜框架表面的金属接线端边缘与注塑工艺中熔化的塑料流动方向平行。 3 [0008] The metal frame above the surface of the copper terminal edges parallel to the direction of flow of the plastic melt in the injection molding process.

[0009] 与注塑工艺中熔化的塑料流动方向垂直的金属接线端边缘的高度与所述金属铜框架相同。 [0009] Metal terminals perpendicular to the direction of flow of the plastic injection molding process the molten metal to the edge of the height of the same copper frame.

[0010] 所述金属接线端的底部与金属铜框架表面的距离大于或等于50微米。 [0010] The distance from the bottom surface of the frame with metallic copper metal terminals than or equal to 50 micrometers.

[0011] 本发明实施例还提出一种金属接线端,所述金属接线端由金属铜框架沟槽结构内壁覆盖的一层金属材料构成,所述金属接线端的开口为多边形,所述金属铜框架在与所述金属接线端至少一边的边缘邻接处具有凹陷结构,所述凹陷底部和与之邻接的金属接线端边缘的高度差为10微米至200微米。 [0011] The present invention further provides a metal terminal, said terminal end is metallic copper metal layer of metallic material of the frame structure of the inner wall of the trench constituting the cover, said opening is polygonal metal terminals, the metal frame of copper difference in height at least the edge adjacent to the side of the metal terminal structure having a recess, said recess adjacent thereto and a bottom end edge of the metal terminal 10 to 200 micrometers.

[0012] 所述凹陷结构在与之邻接的金属接线端边缘垂直方向的宽度大于100微米。 [0012] In the recess structure adjoining metal terminal edge of the vertical width greater than 100 microns.

[0013] 与所述凹陷结构邻接的金属接线端边缘与注塑工艺中熔化的塑料流动方向平行。 [0013] In parallel with the flow direction of the molten plastic recessed structures adjacent to the metal edge of the terminal injection-molding process.

[0014] 较佳地,所述金属接线端的底部与所述凹陷结构底部之间的距离大于或等于50 微米。 [0014] Preferably, the metal terminals and the distance between the bottom of the recessed bottom structure than or equal to 50 micrometers.

[0015] 本发明实施例还提出一种金属接线端的构造方法,包括如下步骤: [0015] The present invention also provides a method of construction of the metal terminal, comprising the steps of:

[0016] 在金属铜框架表面构造沟槽结构,所述沟槽结构的开口为多边形,在所述沟槽的内壁表面覆盖一层非铜的金属材料作为金属接线端; [0016] In the configuration of the surface of metallic copper frame trench structure, the trench structure is polygonal opening, covered with a layer of non-metallic material of copper as the metal terminal in the inner wall surface of the trench;

[0017] 在金属铜框架表面涂布光刻胶,对光刻胶进行显影,去除与所述金属接线端至少一边的边缘邻接的光刻胶; [0017] In the metallic copper surface frame photoresist coating, photoresist is developed, removing the metal adjacent to the side edge of the terminal at least photoresist;

[0018] 以所述光刻胶为掩膜对所述金属铜框架进行蚀刻; [0018] In the photoresist as a mask for etching the copper frame;

[0019] 去除余下的光刻胶。 [0019] removing the remaining photoresist.

[0020] 所述对所述金属铜框架进行蚀刻的深度为10微米至200微米。 [0020] The copper metal frame for the etching depth of 10 microns to 200 microns.

[0021] 所述金属铜框架被蚀刻部分的底部距金属接线端的底部的距离大于或等于50微米。 [0021] The copper metal frame is equal to or greater than a distance from the bottom of the metal terminal 50 of the etched portion of the bottom microns.

[0022] 所述被去除的光刻胶在与之邻接的金属接线端边缘垂直方向上的宽度大于100 微米。 [0022] The photoresist is removed width in the direction perpendicular to adjoining edges of the metal terminal is greater than 100 microns.

[0023] 从以上技术方案可以看出,采用本发明方案的金属接线端的边缘突出金属铜框架的表面,并深入到塑料层中。 [0023] As can be seen from the above technical solution, using the edge of the metal terminal of the embodiment of the present invention, the frame projecting metallic copper surface and deep into the plastic layer. 当塑料层受到外力时,金属接线端的突出部分与塑料层之间会产生沿着金属铜框架表面方向且与外力方向相反的压力来抵消一部分外力的影响,从而提高集成电路块与印刷电路板之间结合的牢固程度。 When the plastic layer is subjected to an external force, and will have a direction opposite to the external force along the direction of the metal copper surface pressure between the frame and the projecting portion of the plastic layer of the metal terminal part to offset the external force, thereby enhancing the integrated circuit and the printed circuit board the degree of inter-firm combination.

附图说明 BRIEF DESCRIPTION

[0024] 图1为现有技术中的集成电路块的横截面示意图; [0024] FIG. 1 is a schematic cross-section of a prior art circuit block;

[0025] 图加至图2c为现有技术的芯片封装方法示意图; [0025] FIGS added to 2c is a schematic view of a chip packaging method of the prior art;

[0026] 图3为本发明实施例的一种集成电路块的横截面示意图; [0026] FIG. 3 is a schematic cross section of an integrated circuit block according to an embodiment of the present invention;

[0027] 图4为本发明实施例的金属接线端的两种截面示意图; [0027] FIG. 4 is a schematic section of the metal terminals of the two kinds of embodiments of the present invention embodiment;

[0028] 图5为向硅片所在区域浇注熔化状态的塑料时的俯视图; [0028] FIG. 5 is a pouring the molten state to the region where the wafer top plan view of the plastic;

[0029] 图6为本发明实施例的一种构造金属接线端的方法流程图。 [0029] 6 is a flowchart of a method of constructing a metal terminal of the embodiment of the present embodiment of the invention.

具体实施方式[0030] 针对现有技术中的金属接线端与塑料层之间的粘合力不够的问题,本发明的方案是改变金属接线端的结构,使得金属接线端与塑料层之间的结合力大大增加。 DETAILED DESCRIPTION [0030] For adhesion between the prior art plastic layer and the metal terminal is not enough problems, the present invention is to change the structure of the metal terminals, so that the bond between the plastic layer and the metal terminal force greatly increased. 为使本发明的目的、技术方案和优点更加清楚,下面结合附图对本发明作进一步的详细阐述。 To make the objectives, technical solutions, and advantages of the invention more apparent, the accompanying drawings of the present invention will be further elaborated binding.

[0031] 本发明实施例的一种集成电路块的横截面如图3所示,其中粗黑箭头所示处,金属接线端104的边缘伸出金属铜框架的表面,而该突起部分深入塑料层105。 [0031] The transverse section of a circuit block of the present invention, the embodiment shown in Figure 3, wherein the thick black arrows shown at the edge of the metal terminals 104 projecting surface of the metal frame of copper, and the plastic portion of the protrusion depth layer 105. 如果塑料层105受到沿着金属铜框架表面方向的外力,金属接线端的突出部分与塑料层之间会产生沿着金属铜框架表面方向且与外力方向相反的压力来抵消一部分外力的影响,这样就会显著增强集成电路块和印刷电路板之间结合的牢固程度。 If the plastic layer 105 and generated by the external force in the direction opposite to the direction of the metal copper surface pressure between the frame portion and the plastic layer along the projecting direction of the metal surface of the external frame of copper, the metal terminals to offset a portion of the external force, so that significantly enhanced as strong bond between the integrated circuit and the printed circuit board.

[0032] 图4示出了本发明实施例的金属接线端的两种截面示意图。 [0032] FIG. 4 shows a schematic sectional view of the present invention, two kinds of metal terminals embodiment. 其中图4(a)的金属铜框架的上表面保持平坦,该金属接线端结构的关键尺度是金属接线端的边缘与金属铜框架的表面之间的高度差A。 Wherein the upper surface in FIG. 4 (a) metallic copper flat holding frame, a critical dimension of the structure of the metal terminal is the height between the surface of the metal terminal and the metal edge of the copper frame difference A. A的范围应当是10微米至200微米。 A range should be 10 to 200 micrometers. 并且,为了保证金属接线端104与金属铜框架之间具有足够的结合力强度,要求金属接线端104的底部距金属铜框架表面的距离至少为50微米。 Further, in order to ensure that the metal between the terminal 104 and the copper frame having a binding strength sufficient force, the metal terminal 104 requires a bottom surface of the frame of metallic copper from a distance of at least 50 microns. 图4(b)中,金属接线端的边缘与金属铜框架的表面高度差为0,金属铜框架在靠近金属接线端的地方有一个凹陷结构,金属接线端的边缘与该凹陷结构底部的高度差C和该凹陷结构的宽度B为关键尺度,其中C的范围与前述关键尺度A的范围相当,也是10微米至200微米;而B的范围是大于100微米。 FIG. 4 (b), the height difference between the surface of the edge of the metallic copper frame metal terminal is 0, metallic copper frame in close proximity to the metal terminal has a recessed structure, the metal terminal edge of the recess of the base structure height difference between C and the width B of the recessed features a critical dimension, wherein the range with the range C a quite critical dimension, is 10 to 200 microns; and B is a range greater than 100 microns. B的取值范围不设上限, 这是因为如果B足够大,图4(b)的情况就趋近于图4(a)。 B ranges no limit, because if B is sufficiently large, the case of FIG. 4 (b) on the approaches of FIG. 4 (a). 为了保证金属接线端104与金属铜框架之间具有足够的结合力强度,要求金属接线端104的底部距金属铜框架凹陷结构底部距离至少为50微米。 In order to ensure a sufficient strength of the binding force between the metal terminals 104 and the metal frame of copper, the bottom metal terminals 104 required distance from the bottom of the recess metallic copper frame structure of at least 50 microns.

[0033] 图5示出了向硅片所在区域浇注熔化状态的塑料时的俯视图。 [0033] FIG. 5 shows a top view of pouring the molten state of the silicon to regions where the plastic. 由于本发明主要是针对金属接线端,因此省去了硅片、导线等部件。 The present invention is directed primarily because the metal terminal, thus eliminating the need for silicon, lead and other components. 在俯视图中,每一个金属接线端区域用一个矩形框或五边形框(五边形可以看作是缺了一个角的矩形)表示,金属接线端的边缘构成了该矩形的四个边。 In plan view, each of the metal terminal region with a rectangle or a pentagon block (a pentagon can be seen as a missing corner of the rectangle), said terminal edge of the metal constituting the four sides of the rectangle. 浇注塑料时,熔化的塑料总是沿着一定的方向(如图5中箭头所示方向)流动直至覆盖硅片及其周围的金属接线端,如果金属接线端的四个边缘都是突出金属铜框架的表面,熔化的塑料可能难以越过该边缘流入金属接线端的沟槽内,从而覆盖住导线与金属接线端的连接点。 Pouring plastic is always melted plastic along a certain direction (the direction as shown by an arrow in FIG. 5) to flow until the silicon wafer to cover the metal terminal and its surrounding four edges of the metal terminal if the metal is copper frame projecting surface, molten plastic may be difficult flows over the inner edge of the trench metal terminals, thereby covering the point of attachment to the metal wire terminals. 因此可以选择性地构造金属接线端边缘,使得与塑料流动方向平行的边缘突出,在图5中用实线表示。 Thus the metal can be selectively configured terminal edge, so that the plastic flow direction parallel to the projecting edge, represented by the solid line in FIG. 5. 一个金属接线端有两个与塑料流动方向平行的边缘,可以只对其中一个边缘按照本发明的方案进行构造,另一个边缘保持和现有技术一致。 A metal terminal has two parallel edges of the plastic flow direction, wherein only one edge can be configured according to the embodiment of the present invention, the other edge remains consistent and the prior art. 而与塑料流动方向垂直的的边缘如现有技术那样是非突出的,在图5中用虚线表示。 While the edges of the plastic perpendicular to the flow direction as in the prior art is non-protruding, shown in phantom in FIG. 5.

[0034] 图6示出了本发明实施例的一种构造金属接线端的方法流程图,该方法是在现有技术金属接线端的加工工艺之后,增加如下步骤: [0034] FIG. 6 illustrates a method of constructing a metal terminal to an embodiment of the present invention, a flow diagram, the prior art method, after the metal terminals process, add the following steps:

[0035] 步骤601 :在金属铜框架表面涂布光刻胶; [0035] Step 601: photoresist coating on the surface of metallic copper frame;

[0036] 步骤602 :对光刻胶进行显影,去除与所述金属接线端至少一边的边缘邻接的光刻胶。 [0036] Step 602: the photoresist is developed, removing the metal adjacent to the side edge of the terminal at least resist. 较佳地,根据注塑工艺中塑料的流动方向,确定与所述方向平行的金属接线端边缘, 去除所确定边缘相邻的宽度为B、长度与所述边缘相同的光刻胶。 Preferably, according to the direction of flow of the plastic injection molding process, to determine a direction parallel to the edge of the metal terminal, removal edge adjacent to the determined width is B, the same length of the edge of the photoresist. B的取值大于100微米。 B value of greater than 100 microns.

[0037] 步骤603 :以所述光刻胶为掩膜,对所述金属铜框架进行蚀刻,蚀刻深度为B。 [0037] Step 603: In the photoresist as a mask, the metal frame of copper is etched, etch depth B. 蚀刻的反应气体或液体不与构成金属接线端的金属发生反应。 The reaction etching gas or liquid which does not react with the metal constituting the metal terminal. 由于构成金属接线端的金属通常为金或者银,这一条件很容易满足。 Since the metal constituting the metal terminal is typically gold or silver, it is easy to satisfy this condition. 较佳地,B的取值为10微米至200微米。 Preferably, the value of B is from 10 to 200 micrometers. 所述金属铜框架被蚀刻部分的底部距金属接线端的底部的距离大于或等于50微米。 The copper metal frame a distance from the bottom of the bottom of the terminal portion is greater than or equal etched 50 micrometers. [0038] 步骤604 :去除余下的光刻胶。 [0038] Step 604: The remaining photoresist is removed.

[0039] 步骤605 :对蚀刻质量进行检查,其中包括检查各项关键尺寸是否符合设计要求, 检查合格则完成本流程。 [0039] Step 605: Check the quality of etching, wherein the key comprises checking whether the size of the design requirements, the present process is completed pass the inspection.

[0040] 以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。 [0040] The foregoing is only preferred embodiments of the present invention but are not intended to limit the present invention, any modifications within the spirit and principle of the present invention, equivalent substitutions and improvements should be included in the present within the scope of the invention.

Claims (12)

1. 一种金属接线端,所述金属接线端由金属铜框架沟槽结构内壁覆盖的一层比铜的化学稳定性以及导电性强的金属材料构成,其特征在于,所述金属接线端的开口为多边形,金属接线端至少有一边的边缘高于所述金属铜框架表面10微米至200微米。 A metal terminal, the metal frame clamps comprises copper metal layer covering an inner wall of the trench structure and chemical stability than the highly conductive material such as copper constituting the metal, wherein the metal terminal opening polygonal, the metal terminal having at least one side edge of the frame above the surface of the metallic copper 10 microns to 200 microns.
2.根据权利要求1所述的金属接线端,其特征在于,所述高于金属铜框架表面的金属接线端边缘与注塑工艺中熔化的塑料流动方向平行。 The metal terminal according to claim 1, wherein the metal frame above the surface of the metallic copper and the terminal edge of the molten plastic in the injection molding process the flow direction in parallel.
3.根据权利要求2所述的金属接线端,其特征在于,与注塑工艺中熔化的塑料流动方向垂直的金属接线端边缘的高度与所述金属铜框架相同。 3. The metal terminal according to claim 2, characterized in that, the same height as the copper metal terminals perpendicular to the direction of flow of the plastic injection molding process the molten edges of the frame.
4.根据权利要求1至3任一项所述的金属接线端,其特征在于,所述金属接线端的底部与金属铜框架表面的距离大于或等于50微米。 The metal terminal according to any one of claims 1 to 3, wherein the frame from the bottom surface of the metallic copper of the metal terminal is equal to or greater than 50 micrometers.
5. 一种金属接线端,所述金属接线端由金属铜框架沟槽结构内壁覆盖的一层比铜的化学稳定性以及导电性强的金属材料构成,其特征在于,所述金属接线端的开口为多边形,所述金属铜框架在与所述金属接线端至少一边的边缘邻接处具有凹陷结构,所述凹陷底部和与之邻接的金属接线端边缘的高度差为10微米至200微米。 A metal terminal, the metal frame clamps comprises copper metal layer covering an inner wall of the trench structure and chemical stability than the highly conductive material such as copper constituting the metal, wherein the metal terminal opening polygonal, the metallic copper frame having a recess structure of the metal terminal abuts at least one side edge of the recess and the height difference between the bottom of the adjoining edges of the metal terminal 10 to 200 micrometers.
6.根据权利要求5所述的金属接线端,其特征在于,所述凹陷结构在与之邻接的金属接线端边缘垂直方向的宽度大于100微米。 6. The metal terminal as claimed in claim 5, wherein said recess structure adjoining metal terminals vertical edge width larger than 100 microns.
7.根据权利要求5所述的金属接线端,其特征在于,与所述凹陷结构邻接的金属接线端边缘与注塑工艺中熔化的塑料流动方向平行。 The metal terminal as claimed in claim 5, characterized in that, in parallel with the flow direction of the molten plastic recessed structures adjacent to the metal edge of the terminal injection-molding process.
8.根据权利要求5、6或7所述的金属接线端,其特征在于,所述金属接线端的底部与所述凹陷结构底部之间的距离大于或等于50微米。 8. The metal terminal according to claim 5, 6 or 7, characterized in that the bottom of the metal terminal and the base structure recess distance between equal to or greater than 50 micrometers.
9. 一种金属接线端的构造方法,包括如下步骤:在金属铜框架表面构造沟槽结构,所述沟槽结构的开口为多边形,在所述沟槽的内壁表面覆盖一层比铜的化学稳定性以及导电性强的金属材料作为金属接线端;;在金属铜框架表面涂布光刻胶,对光刻胶进行显影,去除与所述金属接线端至少一边的边缘邻接的光刻胶;以所述光刻胶为掩膜对所述金属铜框架进行蚀刻;去除余下的光刻胶。 9. A method of construction of the metal terminal, comprising the steps of: a frame structure configured trench metallic copper surface, said opening is polygonal trench structure, covering an inner wall surface of the trench a layer of chemically stable than copper as well as highly conductive metal material as the metal in the metal terminal ;; photoresist coating a copper surface of the frame, the photoresist is developed, removing the metal terminal edge of the at least one side adjacent photoresist; to the photoresist as a mask for etching the copper frame; removing the remaining photoresist.
10.根据权利要求9所述的方法,其特征在于,所述对所述金属铜框架进行蚀刻的深度为10微米至200微米。 10. The method according to claim 9, wherein said etching depth of 10 microns to 200 microns of copper for the metal frame.
11.根据权利要求10所述的方法,其特征在于,所述金属铜框架被蚀刻部分的底部距金属接线端的底部的距离大于或等于50微米。 11. The method according to claim 10, wherein said frame is metallic copper from the bottom of the metal terminal from the bottom of the etched portion is greater than or equal to 50 micrometers.
12.根据权利要求9、10或11所述的方法,其特征在于,所述被去除的光刻胶在与之邻接的金属接线端边缘垂直方向上的宽度大于100微米。 12. A method according to claim 9, 10 or claim 11, wherein said photoresist is removed width in the vertical direction of the metal terminal edge adjacent thereto is greater than 100 microns.
CN 200910055835 2009-08-03 2009-08-03 Metal terminal and construction method thereof CN101989586B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6455348B1 (en) 1998-03-12 2002-09-24 Matsushita Electric Industrial Co., Ltd. Lead frame, resin-molded semiconductor device, and method for manufacturing the same
CN1666349A (en) 2002-06-26 2005-09-07 奥斯兰姆奥普托半导体有限责任公司 Surface-mountable miniature light-emitting diode and/or photodiode and method for the production thereof
CN101218673A (en) 2005-07-08 2008-07-09 Nxp股份有限公司 Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6455348B1 (en) 1998-03-12 2002-09-24 Matsushita Electric Industrial Co., Ltd. Lead frame, resin-molded semiconductor device, and method for manufacturing the same
CN1666349A (en) 2002-06-26 2005-09-07 奥斯兰姆奥普托半导体有限责任公司 Surface-mountable miniature light-emitting diode and/or photodiode and method for the production thereof
CN101218673A (en) 2005-07-08 2008-07-09 Nxp股份有限公司 Semiconductor device

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