WO2007002953A2 - Germanium/silicon avalanche photodetector with separate absorption and multiplication regions - Google Patents
Germanium/silicon avalanche photodetector with separate absorption and multiplication regions Download PDFInfo
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- WO2007002953A2 WO2007002953A2 PCT/US2006/026214 US2006026214W WO2007002953A2 WO 2007002953 A2 WO2007002953 A2 WO 2007002953A2 US 2006026214 W US2006026214 W US 2006026214W WO 2007002953 A2 WO2007002953 A2 WO 2007002953A2
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 title claims description 53
- 239000010703 silicon Substances 0.000 title claims description 53
- 229910052732 germanium Inorganic materials 0.000 title claims description 24
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 230000005684 electric field Effects 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 49
- 238000005286 illumination Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 13
- 230000035945 sensitivity Effects 0.000 description 8
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 5
- 239000000835 fiber Substances 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- Embodiments of invention relate generally to optical devices and, more specifically but not exclusively relate to photodetectors.
- WDM wavelength division multiplexed
- DWDM dense wavelength-division multiplexing
- Commonly used optical components in the system include wavelength division multiplexed (WDM) transmitters and receivers, optical filter such as diffraction gratings, thin-film filters, fiber Bragg gratings, arrayed-waveguide gratings, optical add/drop multiplexers, lasers, optical switches and photodetectors.
- Photodiodes may be used as photodetectors to detect light by converting incident light into an electrical signal.
- An electrical circuit may be coupled to the photodetector to receive the electrical signal representing the incident light. The electrical circuit may then process the electrical signal in accordance with the desired application.
- Figure IA is a diagram illustrating a cross-section view of a plurality of germanium/silicon avalanche photodetectors with separate absorption and multiplication regions in a system for an embodiment of the present invention.
- Figure IB is a diagram illustrating a top view of a plurality of germanium/silicon avalanche photodetectors with separate absorption and multiplication regions arranged in a two-dimensional array for an embodiment of the present invention.
- Figure 2 is a diagram illustrating responsivity versus wavelength relationships with respect to the silicon and germanium layers of an absorption region of an avalanche photodetector for an embodiment of the present invention.
- Figure 3 is a diagram illustrating an improvement in sensitivity with the use of silicon in the multiplication region of a germanium/silicon avalanche photodetector with separate absorption and multiplication regions for an embodiment of the present invention.
- Figure 4A is a diagram illustrating a cross-section view of a germanium/silicon avalanche photodetector with a resonant cavity for an embodiment of the present invention.
- Figure 4B is another diagram illustrating a cross-section view of a germanium/silicon avalanche photodetector with a resonant cavity that shows electron- hole pairs being generated for an embodiment of the present invention.
- Figure IA is a diagram illustrating a cross-section view of a system 100 including plurality of avalanche photodetectors 103 A, 103B,...103N arranged in a grid or an array 101 having one or more dimensions for an embodiment of the present invention. Illumination 117 is incident upon one or more of the plurality of avalanche photodetectors 103 A, 103B 5 ...103N of the array 101. In the illustrated example, an image of an object 116 may be focused onto the array 101 through an optical element 130 with illumination 117. Thus, array 101 may function to sense images, similar to for example a complementary metal oxide semiconductor (CMOS) sensor array or the like.
- CMOS complementary metal oxide semiconductor
- Figure IB shows a top view of array 101 with the plurality of avalanche photodetectors 103 A, 103B 5 ...103N arranged in a two dimensional grid such that each of the plurality of avalanche photodetectors 103 A, 103B,...103N function as pixels or the like for an embodiment of the present invention.
- the example illustrated in Figure IB shows an image 118 of object 116 using the pixels of array 101 within illumination 117.
- Figures IA and IB illustrate an example application of the avalanche photodetectors being employed in a imaging system for explanation purposes, the avalanche photodetectors may be employed in other types of applications in which for example the detection of light having any of a variety of wavelengths including visible through infrared wavelengths is realized in accordance with the teachings of the presenting invention.
- optical element 131 may be a lens or other type of refractive or diffractive optical element such that the image is focused on array 101 with illumination 117.
- Illumination 117 may include visible light, infrared light and/or a combination of wavelengths across the visible through infrared spectrum for an embodiment of the present invention.
- each of the plurality of avalanche photodetectors 103A, 103B 5 ...103N includes semiconductor material layers, 105, 107, 109, 111, 113 and 115.
- a contact 131 is coupled to layer 105 and a contact 133 is coupled to layer 115.
- layer 105 is a p+ doped layer of silicon having a doping concentration of for example 5el9 cm "3 and a thickness of for example 100 nanometers.
- layer 105 has a doping concentration that provides an improved electrical coupling between a contact 131 and layer 105.
- layers 107 and 109 are intrinsic semiconductor material regions that form an absorption region 135 of the avalanche photodetector 103 A.
- Layer 107 is a layer of intrinsic silicon and layer 109 is a layer of intrinsic germanium for one embodiment.
- Proximate to the absorption region 135 is a separate multiplication region 137, which includes a layer 113 of intrinsic semiconductor material such as silicon.
- layer 113 is disposed between a layer 111 of p- doped silicon and a layer 115 of n+ doped silicon.
- layer 111 has a thickness of for example 100 nanometers and a doping concentration of for example l-2el7 cm "3 .
- layer 115 has a doping concentration of for example 5el9 cm "3 .
- each of the plurality of avalanche photodetectors 103 A, 103B,...103N is coupled between ground and a voltage V 1 , V 2 ,...V n such that each avalanche photodetector is biased resulting in an electric field between layers 105 and 115 as shown.
- illumination 117 is incident upon layer 105 of one or more of each of the plurality of avalanche photodetectors 103 A, 103B 5 ...103N.
- Layer 105 is relatively thin such that substantially all of illumination 117 is propagated through layer 105 to layer 107 of the absorption region 135.
- the intrinsic silicon of layer 107 absorbs the light having wavelengths in the range of approximately 420 nanometers to approximately —1100 nanometers. Most of the light having wavelengths greater than approximately ⁇ 1100 nanometers is propagated through the intrinsic silicon layer 107 into the intrinsic germanium layer 109 of the absorption region 135.
- the intrinsic germanium of layer 109 absorbs that remaining light that propagates through layer 107 up to wavelengths of approximately 1600 nanometers.
- Figure 2 is a diagram 201 that shows example responsivity versus wavelength relationships of silicon and germanium for an embodiment of the present invention.
- diagram 201 shows plot 207, which shows the responsivity of silicon with respect to wavelength, and plot 209, which shows the responsivity of germanium with respect to wavelength.
- plot 207 may correspond to the responsivity of the intrinsic silicon of layer 107 and plot 209 may correspond to the responsivity of the intrinsic germanium of Figure IA.
- the silicon absorbs light having wavelengths as short as approximately 420 nanometers. As the wavelengths get longer, the responsivity of silicon begins to drop off due to the lower absorption of silicon at infrared wavelengths.
- the silicon becomes increasingly transparent as the light becomes more infrared.
- the longer wavelengths of illumination 117 are not absorbed in layer 107 and are instead propagate through to layer 109.
- plot 209 shows that the germanium absorbs the longer wavelength light in layer 109 that is propagated through layer 107 up to wavelengths of approximately 1600 nanometers for an embodiment of the present invention.
- the silicon in layer 107 absorbs the shorter wavelengths of light less than approximately ⁇ 1000 nanometers, while at the same wavelength range the germanium has a much larger absorption coefficient and would otherwise not generate significant photocurrent due to surface recombination in accordance with the teachings of the present invention.
- illumination 117 is absorbed in the absorption regions 135 of the avalanche photodetectors from visible light having a wavelength of approximately 420 nanometers all the way up to longer infrared wavelengths having wavelengths up to approximately 1600 nanometers in accordance with the teachings of the present invention.
- This absorption of the light of illumination 117 in semiconductor layers 107 and 109 results in the generation of photocarriers or electron-hole pairs in the absorption region 135.
- the holes of the electron-hole pairs generated in the absorption region 135 drift towards layer 105 and the electrons drift towards layer 115.
- the electrons drift into the multiplication region 137, the electrons are subjected to a relatively high electric field in intrinsic silicon layer 113 resulting from the doping levels of the neighboring layers of p-doped silicon in layer 111 and n+ doped silicon in layer 115.
- impact ionization occurs to the electrons that drift into the multiplication region 137 from the absorption region 135 in accordance with the teachings of the present invention.
- the photocurrent created from the absorption of illumination 117 in absorption region 135 is multiplied or amplified in multiplication region 137 for an embodiment of the present invention.
- the photocarriers are then collected at contacts 131 and 133. For instance holes may be collected at contact 131 and electrons are collected at contact 133.
- Contacts 131 and 133 may be coupled to electrical circuitry to process the signals present at each of the contacts 131 and 133 according to embodiments of the present invention.
- multiplication region 137 includes intrinsic silicon in layer 113 as will as silicon in neighboring p-doped and n+ doped layers 111 and 115, respectively.
- Figure 3 is a diagram 301 illustrating an improvement in sensitivity that is realized for an embodiment of an avalanche photodetector utilizing silicon in the multiplication region 137 instead of another material, such as for example indium phosphide (InP).
- diagram 301 shows a relationship between a receiver sensitivity dBm versus photomultiplication gain M for various embodiments of an avalanche photodectector.
- plot 333 shows a receiver sensitivity versus photomultiplication gain relationship for an indium phosphide based avalanche photodetector
- plot 335 shows a receiver sensitivity versus photomultiplication gain relationship for silicon based avalanche photodetector.
- receiver sensitivity is improved by approximately 4-5 dB by using a silicon based avalanched photodetector instead of an indium phosphide based avalanche photodetector for an embodiment of the present invention.
- the utilization of silicon in the multiplication region 137 for an embodiment of the present invention improves sensitivity of the avalanche photodetectors 103A, 103B,...103N as shown in Figures IA and IB because of the impact ionization properties of the electrons and holes in the material.
- substantially only one type of carrier, in particular electrons are able to achieve impact ionization because of the use of silicon in multiplication region 137.
- the k-factor which is the ratio of impact ionization coefficients of holes to electrons.
- Silicon has a k-factor about one order of magnitude lower than, for example, indium phosphide.
- a result of the use of silicon is that substantially only electrons are selectively multiplied or amplified in multiplication region 137 instead of holes.
- noise and instability in the avalanche photodetectors 103 A, 103B,...103N is reduced for an embodiment of the present invention compared to a material with a higher k-factor.
- An equation showing the excess noise tied to the k-factor (Jc) is:
- F A is the excess noise factor and M is the gain of the avalanche photodetector.
- the chances of runaway resulting from the generation more than one type of carrier in multiplication region 137 is substantially reduced because substantially only electrons are able to achieve impact ionization by using silicon of multiplication region 137 for an embodiment of the present invention.
- the k-factor value of silicon for an embodiment of the present invention is less than 0.05 or approximately 0.02-0.05.
- the k-factor value for other materials such as for example indium gallium arsenide (InGaAs) is approximately 0.5-0.7 while the k-factor value for germanium is approximately 0.7-1.0.
- the k-factor value using silicon for an embodiment of the present invention is less than other materials. Therefore, using silicon for an embodiment of an avalanche photodetector in multiplication region 137 results in improved sensitivity over avalanche photodetectors using other materials such as indium gallium arsenide or germanium or the like.
- Figure 4A is a diagram illustrating a cross-section view of a germanium/silicon avalanche photodetector 403 with a resonant cavity for an embodiment of the present invention. It is appreciated that avalanche photodetector 403 shares similarities with the examples avalanche photodetectors 103 A, 103B,...103N shown in Figures IA and IB and that avalanche photodetector 403 may be used in place of any one or more of the avalanche photodetectors 103 A, 103B,...103N in accordance with the teachings of the present invention.
- avalanche photodetector 403 includes layers, 405, 407, 409, 411, 413 and 415.
- avalanche photodetector 403 is disposed on a silicon-on- insulator (SOI) wafer, and therefore, avalanche photodetector also includes a silicon substrate layer 419 and a reflective layer, which is illustrated in Figure 4A as a buried oxide layer 425.
- avalanche photodetector 403 also includes guard rings 421, which are disposed at the surface and into layer 407 on opposing sides of layer 405 at the surface of layer 407 as shown in Figure 4A.
- layer 405 and guard rings 421 are p+ doped silicon having a doping concentration that provides an improved electrical coupling between a contact coupled to layer 405 and layer 407.
- guard rings 421 are disposed proximate to layer 405 as shown in Figure 4A to help prevent or reduce electric field from extending to or past the edges of avalanche photodetector 403.
- guard rings 431 help to reduce leakage current from the avalanche photodetector 403 structure in accordance with the teachings of the present invention.
- layers 407 and 409 form an absorption region 435 of the avalanche photodetector 403.
- Layer 407 is a layer of intrinsic silicon and layer 409 is a layer of intrinsic germanium for one embodiment.
- Proximate to the absorption region 435 is a separate multiplication region 437, which includes a layer 413 of intrinsic silicon.
- layer 413 is disposed between a layer 411 of p- doped silicon and a layer 415 of n+ doped silicon.
- layers 411 and 415 having doping concentrations that result in a high electric field in layer 413 of multiplication region 437.
- layer 411 has doping concentration of for example l-2el7 cm “3 and layer 415 has a doping concentration of for example 5el9 cm " for one embodiment.
- a lower electric field is also present between layer 405 and layer 415 for an embodiment of the present invention.
- illumination 417 is directed to avalanche photodetector 403 and is incident upon a surface of avalanche photodetector 403.
- illumination 417 is directed through free space and is incident upon a surface of layer 405.
- the light from illumination 417 is absorbed in absorption region 435 and electrons from the photocurrent or electron-hole pairs generated in absorption region 435 are multiplied in multiplication region 437 as a result of impact ionization in accordance with the teachings of the present invention.
- a resonant cavity is also defined in avalanche photodetector 403 between buried oxide layer 425 and the surface of avalanche photodetector 403 on which the light of illumination 417 is incident.
- the light illumination 417 circulates in the resonant cavity between buried oxide layer 425 and the surface of the avalanche photodetector as shown in Figure 4A as shown.
- Figure 4B is another diagram illustrating increased detail of a cross-section view of avalanche photodetector 403 with a resonant cavity that shows electron-hole pairs being generated for an embodiment of the present invention.
- Figure 4B shows illumination 417 incident on the surface of layer 405 of avalanche photodetector 403.
- the light is absorbed, which generates photocurrent or electron-hole pairs including electron 427 and hole 429.
- the electric field between p+ doped layer 405 and n+ doped layer 415 electrons 427 drift from absorption region 435 into multiplication region 437.
- the light from illumination 417 is recycled within the absorption region 435 and multiplication region 437, thereby increasing the probability of absorption of illumination 417 and improving the performance of avalanche photodetector 403 in accordance with the teachings of the present invention.
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Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008518526A JP2008544559A (en) | 2005-06-28 | 2006-06-28 | Germanium / silicon avalanche photodetector with separate absorption / multiplication regions |
EP06774518A EP1897148A2 (en) | 2005-06-28 | 2006-06-28 | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US11/170,556 US7233051B2 (en) | 2005-06-28 | 2005-06-28 | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
US11/170,556 | 2005-06-28 |
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WO2007002953A2 true WO2007002953A2 (en) | 2007-01-04 |
WO2007002953A3 WO2007002953A3 (en) | 2007-06-21 |
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PCT/US2006/026214 WO2007002953A2 (en) | 2005-06-28 | 2006-06-28 | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
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US (4) | US7233051B2 (en) |
EP (1) | EP1897148A2 (en) |
JP (1) | JP2008544559A (en) |
KR (1) | KR100944574B1 (en) |
CN (2) | CN1905216B (en) |
WO (1) | WO2007002953A2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010034226A (en) * | 2008-07-28 | 2010-02-12 | Univ Of Tokyo | Optical semiconductor element, photoelectric converting element and optical modulating element |
US8338857B2 (en) | 2005-06-28 | 2012-12-25 | Intel Corporation | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
KR20140025270A (en) * | 2012-08-20 | 2014-03-04 | 한국전자통신연구원 | Low-voltage high-gain high-speed germanium photo detector |
US9377581B2 (en) | 2013-05-08 | 2016-06-28 | Mellanox Technologies Silicon Photonics Inc. | Enhancing the performance of light sensors that receive light signals from an integrated waveguide |
US9728657B2 (en) | 2015-01-20 | 2017-08-08 | Electronics And Telecommunications Research Institute | Photodetector |
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DE102007037020B3 (en) * | 2007-08-06 | 2008-08-21 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Avalanche photodiode for use in Avalanche radiation detector, has electrode arranged lateral to diode layer so that it depletes substrate laterally adjacent to layer, when resistance layer is shielded from diode layer opposite to electrode |
EP2201417B1 (en) * | 2007-10-02 | 2020-12-02 | Luxtera, Inc. | Method and system for optoelectronics transceivers integrated on a cmos chip |
KR100928204B1 (en) | 2007-12-11 | 2009-11-25 | 한국전자통신연구원 | CMOS-based flat-panel avalanche photodiode using silicon epilayer and its manufacturing method |
US8279411B2 (en) * | 2008-08-27 | 2012-10-02 | The Boeing Company | Systems and methods for reducing crosstalk in an avalanche photodiode detector array |
WO2011081693A2 (en) * | 2009-10-12 | 2011-07-07 | The Regents Of The University Of California | Low noise, stable avalanche photodiode |
US8242432B2 (en) * | 2009-10-23 | 2012-08-14 | Kotura, Inc. | System having light sensor with enhanced sensitivity including a multiplication layer for generating additional electrons |
KR20110068041A (en) * | 2009-12-15 | 2011-06-22 | 한국전자통신연구원 | Avalanche photodetector integrated micro lens |
US8330171B2 (en) | 2010-07-23 | 2012-12-11 | Intel Corporation | High speed, wide optical bandwidth, and high efficiency resonant cavity enhanced photo-detector |
US9395182B1 (en) | 2011-03-03 | 2016-07-19 | The Boeing Company | Methods and systems for reducing crosstalk in avalanche photodiode detector arrays |
WO2013101110A1 (en) * | 2011-12-29 | 2013-07-04 | Intel Corporation | Avalanche photodiode with low breakdown voltage |
US10312397B2 (en) | 2011-12-29 | 2019-06-04 | Intel Corporation | Avalanche photodiode with low breakdown voltage |
EP2856505B1 (en) * | 2012-05-29 | 2020-11-18 | Hewlett-Packard Enterprise Development LP | Devices including independently controllable absorption region and multiplication region electric fields |
FR2992472B1 (en) * | 2012-06-20 | 2014-08-08 | Commissariat Energie Atomique | SEMICONDUCTOR OPTICAL RECEIVER WITH PIN STRUCTURE |
US9171996B2 (en) | 2012-08-20 | 2015-10-27 | Electronics And Telecommunications Research Institute | Low-voltage high-gain high-speed germanium photo detector and method of fabricating the same |
KR101691851B1 (en) * | 2013-03-11 | 2017-01-02 | 인텔 코포레이션 | Low voltage avalanche photodiode with re-entrant mirror for silicon based photonic integrated circuits |
US10283665B2 (en) * | 2013-07-08 | 2019-05-07 | Sifotonics Technologies Co., Ltd. | Compensated photonic device structure and fabrication method thereof |
CN104882509B (en) * | 2015-04-05 | 2017-04-19 | 北京工业大学 | Waveguide butt-coupling type separated absorption multiplication avalanche diode |
EP3363050B1 (en) | 2015-07-23 | 2020-07-08 | Artilux Inc. | High efficiency wide spectrum sensor |
WO2017019013A1 (en) | 2015-07-27 | 2017-02-02 | Hewlett Packard Enterprise Development Lp | Doped absorption devices |
JP6534888B2 (en) * | 2015-07-30 | 2019-06-26 | 技術研究組合光電子融合基盤技術研究所 | Planar light detector |
WO2017024121A1 (en) | 2015-08-04 | 2017-02-09 | Artilux Corporation | Germanium-silicon light sensing apparatus |
US10861888B2 (en) | 2015-08-04 | 2020-12-08 | Artilux, Inc. | Silicon germanium imager with photodiode in trench |
US10707260B2 (en) | 2015-08-04 | 2020-07-07 | Artilux, Inc. | Circuit for operating a multi-gate VIS/IR photodiode |
US10761599B2 (en) | 2015-08-04 | 2020-09-01 | Artilux, Inc. | Eye gesture tracking |
CN114754864B (en) * | 2015-08-27 | 2023-03-24 | 光程研创股份有限公司 | Wide-frequency spectrum optical sensor |
JP6362142B2 (en) * | 2015-09-15 | 2018-07-25 | 日本電信電話株式会社 | Germanium receiver |
US10741598B2 (en) | 2015-11-06 | 2020-08-11 | Atrilux, Inc. | High-speed light sensing apparatus II |
US10886309B2 (en) | 2015-11-06 | 2021-01-05 | Artilux, Inc. | High-speed light sensing apparatus II |
US10739443B2 (en) | 2015-11-06 | 2020-08-11 | Artilux, Inc. | High-speed light sensing apparatus II |
US10418407B2 (en) | 2015-11-06 | 2019-09-17 | Artilux, Inc. | High-speed light sensing apparatus III |
US10254389B2 (en) | 2015-11-06 | 2019-04-09 | Artilux Corporation | High-speed light sensing apparatus |
DE102016103113A1 (en) * | 2016-02-23 | 2017-08-24 | Vishay Semiconductor Gmbh | Optoelectronic device |
JP6699055B2 (en) * | 2016-06-06 | 2020-05-27 | 日本電信電話株式会社 | Avalanche receiver |
EP3475987A4 (en) * | 2016-06-21 | 2020-01-01 | Shenzhen Xpectvision Technology Co., Ltd. | An image sensor based on avalanche photodiodes |
US11482553B2 (en) | 2018-02-23 | 2022-10-25 | Artilux, Inc. | Photo-detecting apparatus with subpixels |
US11105928B2 (en) | 2018-02-23 | 2021-08-31 | Artilux, Inc. | Light-sensing apparatus and light-sensing method thereof |
TWI788246B (en) | 2018-02-23 | 2022-12-21 | 美商光程研創股份有限公司 | Photo-detecting apparatus |
JP2019165181A (en) * | 2018-03-20 | 2019-09-26 | 株式会社東芝 | Light detection device |
TWI780007B (en) | 2018-04-08 | 2022-10-01 | 美商光程研創股份有限公司 | Photo-detecting apparatus and system thereof |
TWI795562B (en) | 2018-05-07 | 2023-03-11 | 美商光程研創股份有限公司 | Avalanche photo-transistor |
US10969877B2 (en) | 2018-05-08 | 2021-04-06 | Artilux, Inc. | Display apparatus |
WO2020010590A1 (en) * | 2018-07-12 | 2020-01-16 | Shenzhen Xpectvision Technology Co., Ltd. | Image sensors with silver-nanoparticle electrodes |
US11574942B2 (en) | 2018-12-12 | 2023-02-07 | Artilux, Inc. | Semiconductor device with low dark noise |
EP4022681B1 (en) | 2019-08-28 | 2024-05-22 | Artilux, Inc. | Photo-detecting apparatus with low dark current |
US11309447B2 (en) | 2019-12-26 | 2022-04-19 | Globalfoundries U.S. Inc. | Separate absorption charge and multiplication avalanche photodiode structure and method of making such a structure |
KR20230002424A (en) * | 2020-04-24 | 2023-01-05 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | Photodetectors and Electronics |
WO2022221271A1 (en) * | 2021-04-13 | 2022-10-20 | Impact Photonics Llc | Silicon-germanium avalanche photodiode |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2025693A (en) * | 1978-07-17 | 1980-01-23 | Kokusai Denshin Denwa Co Ltd | Avalanche photo diode with semiconductor hetero structure |
US6465803B1 (en) * | 1996-05-07 | 2002-10-15 | The Regents Of The University Of California | Semiconductor hetero-interface photodetector |
WO2004027879A2 (en) * | 2002-09-19 | 2004-04-01 | Quantum Semiconductor Llc | Light-sensing device |
US20040079408A1 (en) * | 2002-10-23 | 2004-04-29 | The Boeing Company | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL280435A (en) | 1962-07-02 | |||
US4009058A (en) | 1975-06-16 | 1977-02-22 | Rca Corporation | Method of fabricating large area, high voltage PIN photodiode devices |
JPS5421294A (en) | 1977-07-19 | 1979-02-17 | Mitsubishi Electric Corp | Avalanche photo diode |
US4210923A (en) * | 1979-01-02 | 1980-07-01 | Bell Telephone Laboratories, Incorporated | Edge illuminated photodetector with optical fiber alignment |
DE2927183A1 (en) | 1979-07-05 | 1981-01-08 | Standard Elektrik Lorenz Ag | AVALANCHE PHOTODIOD |
US4471155A (en) * | 1983-04-15 | 1984-09-11 | Energy Conversion Devices, Inc. | Narrow band gap photovoltaic devices with enhanced open circuit voltage |
JPS61226976A (en) | 1985-03-30 | 1986-10-08 | Fujitsu Ltd | Semiconductor light-receiving element |
JPS61226973A (en) | 1985-04-01 | 1986-10-08 | Hitachi Ltd | Avalanche photodiode |
CA1282671C (en) * | 1985-11-18 | 1991-04-09 | John Condon Bean | Device having strain induced region |
CA1305350C (en) | 1986-04-08 | 1992-07-21 | Hiroshi Amada | Light receiving member |
US4857982A (en) | 1988-01-06 | 1989-08-15 | University Of Southern California | Avalanche photodiode with floating guard ring |
GB8913198D0 (en) | 1989-06-08 | 1989-07-26 | British Telecomm | Guard ring structure |
DE4011860A1 (en) | 1990-04-09 | 1991-10-10 | Siemens Ag | SEMICONDUCTOR ELEMENT WITH A SILICON LAYER |
JP2970815B2 (en) | 1990-04-11 | 1999-11-02 | 株式会社東芝 | Semiconductor light receiving element |
JPH0493088A (en) | 1990-08-09 | 1992-03-25 | Nec Corp | Avalanche photodiode |
JPH04304672A (en) | 1991-04-01 | 1992-10-28 | Olympus Optical Co Ltd | Solid state image sensor |
US5401952A (en) | 1991-10-25 | 1995-03-28 | Canon Kabushiki Kaisha | Signal processor having avalanche photodiodes |
JP2935307B2 (en) * | 1992-02-20 | 1999-08-16 | 株式会社日立製作所 | display |
US5596186A (en) | 1993-12-08 | 1997-01-21 | Nikon Corporation | High sensitivity silicon avalanche photodiode |
JP2730472B2 (en) | 1993-12-28 | 1998-03-25 | 日本電気株式会社 | Semiconductor light receiving element |
JP2701754B2 (en) | 1994-10-03 | 1998-01-21 | 日本電気株式会社 | Method for manufacturing silicon light receiving element |
JP2601231B2 (en) | 1994-12-22 | 1997-04-16 | 日本電気株式会社 | Superlattice avalanche photodiode |
EP0818829A1 (en) * | 1996-07-12 | 1998-01-14 | Hitachi, Ltd. | Bipolar transistor and method of fabricating it |
US5897371A (en) | 1996-12-19 | 1999-04-27 | Cypress Semiconductor Corp. | Alignment process compatible with chemical mechanical polishing |
JPH10290023A (en) | 1997-04-15 | 1998-10-27 | Nec Corp | Semiconductor photodetector |
US5757057A (en) | 1997-06-25 | 1998-05-26 | Advanced Photonix, Inc. | Large area avalanche photodiode array |
JP3141847B2 (en) | 1998-07-03 | 2001-03-07 | 日本電気株式会社 | Avalanche photodiode |
US6515315B1 (en) | 1999-08-05 | 2003-02-04 | Jds Uniphase, Corp. | Avalanche photodiode for high-speed applications |
US6351326B1 (en) | 1999-12-14 | 2002-02-26 | Intel Corporation | Method and apparatus for optically modulating light utilizing a resonant cavity structure |
US6417528B1 (en) | 2000-01-28 | 2002-07-09 | Agere Systems Guardian Corp. | High speed semiconductor photodetector |
JP2001284630A (en) * | 2000-03-29 | 2001-10-12 | Minolta Co Ltd | Semiconductor photoelectric converter element, its use method and manufacturing method |
JP4702977B2 (en) | 2000-04-28 | 2011-06-15 | 富士通株式会社 | Receiver |
KR100366046B1 (en) | 2000-06-29 | 2002-12-27 | 삼성전자 주식회사 | Method of manufacturing avalanche phoetodiode |
GB2367945B (en) | 2000-08-16 | 2004-10-20 | Secr Defence | Photodetector circuit |
WO2002018574A2 (en) | 2000-08-25 | 2002-03-07 | North Shore-Long Island Jewish Research Institute | Human interleukin-four induced protein |
US6384462B1 (en) * | 2000-12-06 | 2002-05-07 | Nova Crystals, Inc. | Planar hetero-interface photodetector |
JP4220688B2 (en) | 2001-02-26 | 2009-02-04 | 日本オプネクスト株式会社 | Avalanche photodiode |
US6633716B2 (en) | 2001-05-02 | 2003-10-14 | Motorola, Inc. | Optical device and method therefor |
JP2002368252A (en) | 2001-06-06 | 2002-12-20 | Sanyo Electric Co Ltd | Pin diode |
JP4157698B2 (en) | 2001-11-26 | 2008-10-01 | ユーディナデバイス株式会社 | Semiconductor light receiving element and driving method thereof |
US6720588B2 (en) | 2001-11-28 | 2004-04-13 | Optonics, Inc. | Avalanche photodiode for photon counting applications and method thereof |
JP2003163361A (en) * | 2001-11-29 | 2003-06-06 | Mitsubishi Electric Corp | Photodetecting element and optical communication device |
US7072557B2 (en) | 2001-12-21 | 2006-07-04 | Infinera Corporation | InP-based photonic integrated circuits with Al-containing waveguide cores and InP-based array waveguide gratings (AWGs) and avalanche photodiodes (APDs) and other optical components containing an InAlGaAs waveguide core |
CA2474560C (en) | 2002-02-01 | 2012-03-20 | Picometrix, Inc. | Planar avalanche photodiode |
US6693308B2 (en) | 2002-02-22 | 2004-02-17 | Semisouth Laboratories, Llc | Power SiC devices having raised guard rings |
US6821808B2 (en) * | 2002-08-23 | 2004-11-23 | Micron Technology, Inc. | CMOS APS with stacked avalanche multiplication layer which provides linear and logarithmic photo-conversion characteristics |
JP4154293B2 (en) | 2003-07-09 | 2008-09-24 | 株式会社日立製作所 | Avalanche photodiode, optical module and optical receiver |
TWI228320B (en) | 2003-09-09 | 2005-02-21 | Ind Tech Res Inst | An avalanche photo-detector(APD) with high saturation power, high gain-bandwidth product |
US7271405B2 (en) | 2003-10-14 | 2007-09-18 | Stc.Unm | Intersubband detector with avalanche multiplier region |
US7160753B2 (en) | 2004-03-16 | 2007-01-09 | Voxtel, Inc. | Silicon-on-insulator active pixel sensors |
US6943409B1 (en) * | 2004-05-24 | 2005-09-13 | International Business Machines Corporation | Trench optical device |
US7397101B1 (en) * | 2004-07-08 | 2008-07-08 | Luxtera, Inc. | Germanium silicon heterostructure photodetectors |
US7209623B2 (en) * | 2005-05-03 | 2007-04-24 | Intel Corporation | Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions |
US7233051B2 (en) | 2005-06-28 | 2007-06-19 | Intel Corporation | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
KR100798836B1 (en) * | 2006-05-24 | 2008-01-28 | 교세미 가부시키가이샤 | Multilayer solar cell |
US7741657B2 (en) | 2006-07-17 | 2010-06-22 | Intel Corporation | Inverted planar avalanche photodiode |
US7683397B2 (en) | 2006-07-20 | 2010-03-23 | Intel Corporation | Semi-planar avalanche photodiode |
-
2005
- 2005-06-28 US US11/170,556 patent/US7233051B2/en active Active
-
2006
- 2006-06-28 JP JP2008518526A patent/JP2008544559A/en active Pending
- 2006-06-28 CN CN2006101513471A patent/CN1905216B/en active Active
- 2006-06-28 CN CN2012100343905A patent/CN102593202A/en active Pending
- 2006-06-28 WO PCT/US2006/026214 patent/WO2007002953A2/en active Application Filing
- 2006-06-28 KR KR1020077030930A patent/KR100944574B1/en active IP Right Grant
- 2006-06-28 EP EP06774518A patent/EP1897148A2/en not_active Withdrawn
-
2007
- 2007-03-15 US US11/724,805 patent/US8829566B2/en active Active
-
2010
- 2010-08-28 US US12/870,811 patent/US8338857B2/en active Active
-
2014
- 2014-08-28 US US14/472,241 patent/US20140367740A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2025693A (en) * | 1978-07-17 | 1980-01-23 | Kokusai Denshin Denwa Co Ltd | Avalanche photo diode with semiconductor hetero structure |
US6465803B1 (en) * | 1996-05-07 | 2002-10-15 | The Regents Of The University Of California | Semiconductor hetero-interface photodetector |
WO2004027879A2 (en) * | 2002-09-19 | 2004-04-01 | Quantum Semiconductor Llc | Light-sensing device |
US20040079408A1 (en) * | 2002-10-23 | 2004-04-29 | The Boeing Company | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8338857B2 (en) | 2005-06-28 | 2012-12-25 | Intel Corporation | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
US8829566B2 (en) | 2005-06-28 | 2014-09-09 | Intel Corporation | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
JP2010034226A (en) * | 2008-07-28 | 2010-02-12 | Univ Of Tokyo | Optical semiconductor element, photoelectric converting element and optical modulating element |
KR20140025270A (en) * | 2012-08-20 | 2014-03-04 | 한국전자통신연구원 | Low-voltage high-gain high-speed germanium photo detector |
KR101705725B1 (en) * | 2012-08-20 | 2017-02-13 | 한국전자통신연구원 | low-voltage high-gain high-speed germanium photo detector |
US9377581B2 (en) | 2013-05-08 | 2016-06-28 | Mellanox Technologies Silicon Photonics Inc. | Enhancing the performance of light sensors that receive light signals from an integrated waveguide |
US9728657B2 (en) | 2015-01-20 | 2017-08-08 | Electronics And Telecommunications Research Institute | Photodetector |
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US8338857B2 (en) | 2012-12-25 |
EP1897148A2 (en) | 2008-03-12 |
US20100320502A1 (en) | 2010-12-23 |
CN1905216B (en) | 2012-03-21 |
CN1905216A (en) | 2007-01-31 |
US7233051B2 (en) | 2007-06-19 |
US8829566B2 (en) | 2014-09-09 |
WO2007002953A3 (en) | 2007-06-21 |
US20140367740A1 (en) | 2014-12-18 |
US20060289957A1 (en) | 2006-12-28 |
US20070164385A1 (en) | 2007-07-19 |
KR100944574B1 (en) | 2010-02-25 |
CN102593202A (en) | 2012-07-18 |
JP2008544559A (en) | 2008-12-04 |
KR20080028385A (en) | 2008-03-31 |
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