WO2007001790A3 - Sonde utilisée dans la détermination d’un attribut d’un revêtement sur un substrat - Google Patents

Sonde utilisée dans la détermination d’un attribut d’un revêtement sur un substrat Download PDF

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Publication number
WO2007001790A3
WO2007001790A3 PCT/US2006/022351 US2006022351W WO2007001790A3 WO 2007001790 A3 WO2007001790 A3 WO 2007001790A3 US 2006022351 W US2006022351 W US 2006022351W WO 2007001790 A3 WO2007001790 A3 WO 2007001790A3
Authority
WO
WIPO (PCT)
Prior art keywords
probe
coating
electrically conductive
optional feature
processing system
Prior art date
Application number
PCT/US2006/022351
Other languages
English (en)
Other versions
WO2007001790A2 (fr
Inventor
John E Prey Jr
Joseph Tom
Original Assignee
Oxford Instr Measurement Syste
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford Instr Measurement Syste filed Critical Oxford Instr Measurement Syste
Publication of WO2007001790A2 publication Critical patent/WO2007001790A2/fr
Publication of WO2007001790A3 publication Critical patent/WO2007001790A3/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06788—Hand-held or hand-manipulated probes, e.g. for oscilloscopes or for portable test instruments

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Leads Or Probes (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)

Abstract

L’invention concerne une sonde (40) servant à la communication électrique entre un revêtement (42) et un système de traitement. Un dispositif optionnel comporte un élément d’insertion électriquement conducteur (66) se projetant vers l’extérieur qui est maintenu dans une structure de soutien (62, 64) retenue de façon amovible dans un boîtier (50) et s’insère dans un contact (54) à l’intérieur de la sonde (40) et est connecté avec le système de traitement. Un autre dispositif optionnel de la sonde (40) présente l’élément d’insertion électriquement conducteur (66) sous la forme d’une broche (66) ou de broches (66) retenues dans une structure transmettrice de lumière (62, 64) adjacente à une source émettrice de lumière (58). Un autre dispositif optionnel de la sonde (40) comprend une structure de contention (62, 64) qui définit un siège tronconique (180) pour insérer une extrémité distale conique (170) d’une broche électriquement conductrice (66) qui est adaptée à entrer en contact avec le revêtement (42).
PCT/US2006/022351 2005-06-24 2006-06-08 Sonde utilisée dans la détermination d’un attribut d’un revêtement sur un substrat WO2007001790A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/166,560 2005-06-24
US11/166,560 US7148712B1 (en) 2005-06-24 2005-06-24 Probe for use in determining an attribute of a coating on a substrate

Publications (2)

Publication Number Publication Date
WO2007001790A2 WO2007001790A2 (fr) 2007-01-04
WO2007001790A3 true WO2007001790A3 (fr) 2007-02-22

Family

ID=37497276

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/022351 WO2007001790A2 (fr) 2005-06-24 2006-06-08 Sonde utilisée dans la détermination d’un attribut d’un revêtement sur un substrat

Country Status (2)

Country Link
US (1) US7148712B1 (fr)
WO (1) WO2007001790A2 (fr)

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US10453945B2 (en) 2016-08-08 2019-10-22 Atomera Incorporated Semiconductor device including resonant tunneling diode structure having a superlattice
US10107854B2 (en) 2016-08-17 2018-10-23 Atomera Incorporated Semiconductor device including threshold voltage measurement circuitry
JP2018136195A (ja) * 2017-02-22 2018-08-30 日置電機株式会社 プローブ装置および測定システム
EP3635789B1 (fr) 2017-05-16 2022-08-10 Atomera Incorporated Dispositif à semi-conducteur et procédé comprenant un super-réseau en tant que couche de piégeage
TWI685109B (zh) 2017-06-13 2020-02-11 美商安托梅拉公司 具有含超晶格之凹槽通道陣列電晶體（rcat）之半導體元件及其相關方法
US10109479B1 (en) 2017-07-31 2018-10-23 Atomera Incorporated Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice
CN111247640B (zh) 2017-08-18 2023-11-03 阿托梅拉公司 包括与超晶格sti界面相邻的非单晶纵梁的半导体器件和方法
US10529768B2 (en) 2017-12-15 2020-01-07 Atomera Incorporated Method for making CMOS image sensor including pixels with read circuitry having a superlattice
US10461118B2 (en) 2017-12-15 2019-10-29 Atomera Incorporated Method for making CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk
US10396223B2 (en) 2017-12-15 2019-08-27 Atomera Incorporated Method for making CMOS image sensor with buried superlattice layer to reduce crosstalk
US10367028B2 (en) 2017-12-15 2019-07-30 Atomera Incorporated CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice
US10608027B2 (en) 2017-12-15 2020-03-31 Atomera Incorporated Method for making CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice
US10529757B2 (en) 2017-12-15 2020-01-07 Atomera Incorporated CMOS image sensor including pixels with read circuitry having a superlattice
US10276625B1 (en) 2017-12-15 2019-04-30 Atomera Incorporated CMOS image sensor including superlattice to enhance infrared light absorption
US10608043B2 (en) 2017-12-15 2020-03-31 Atomera Incorporation Method for making CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice
US10615209B2 (en) 2017-12-15 2020-04-07 Atomera Incorporated CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice
US10361243B2 (en) 2017-12-15 2019-07-23 Atomera Incorporated Method for making CMOS image sensor including superlattice to enhance infrared light absorption
US10355151B2 (en) 2017-12-15 2019-07-16 Atomera Incorporated CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk
US10304881B1 (en) 2017-12-15 2019-05-28 Atomera Incorporated CMOS image sensor with buried superlattice layer to reduce crosstalk
US10705119B2 (en) * 2018-02-21 2020-07-07 Fluke Corporation Shrouded test probe
EP3762959B1 (fr) 2018-03-08 2024-04-10 Atomera Incorporated Dispositif à semi-conducteur comprenant des structures de contact améliorées comportant un super-réseau et procédés associés
US10468245B2 (en) 2018-03-09 2019-11-05 Atomera Incorporated Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
US10727049B2 (en) 2018-03-09 2020-07-28 Atomera Incorporated Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
US10884185B2 (en) 2018-04-12 2021-01-05 Atomera Incorporated Semiconductor device including vertically integrated optical and electronic devices and comprising a superlattice
WO2019199926A1 (fr) 2018-04-12 2019-10-17 Atomera Incorporated Dispositif et procédé de fabrication d'un transistor à effet de champ à canal en t inversé (itfet) comprenant un super-réseau
US10811498B2 (en) 2018-08-30 2020-10-20 Atomera Incorporated Method for making superlattice structures with reduced defect densities
US10566191B1 (en) 2018-08-30 2020-02-18 Atomera Incorporated Semiconductor device including superlattice structures with reduced defect densities
US10840335B2 (en) 2018-11-16 2020-11-17 Atomera Incorporated Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance
US10593761B1 (en) 2018-11-16 2020-03-17 Atomera Incorporated Method for making a semiconductor device having reduced contact resistance
US10818755B2 (en) 2018-11-16 2020-10-27 Atomera Incorporated Method for making semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance
US10580867B1 (en) 2018-11-16 2020-03-03 Atomera Incorporated FINFET including source and drain regions with dopant diffusion blocking superlattice layers to reduce contact resistance
US10840336B2 (en) 2018-11-16 2020-11-17 Atomera Incorporated Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods
US10854717B2 (en) 2018-11-16 2020-12-01 Atomera Incorporated Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance
US10840337B2 (en) 2018-11-16 2020-11-17 Atomera Incorporated Method for making a FINFET having reduced contact resistance
US10847618B2 (en) 2018-11-16 2020-11-24 Atomera Incorporated Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance
US10580866B1 (en) 2018-11-16 2020-03-03 Atomera Incorporated Semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance
US11094818B2 (en) 2019-04-23 2021-08-17 Atomera Incorporated Method for making a semiconductor device including a superlattice and an asymmetric channel and related methods
US10937888B2 (en) 2019-07-17 2021-03-02 Atomera Incorporated Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices
US11183565B2 (en) 2019-07-17 2021-11-23 Atomera Incorporated Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods
US10825901B1 (en) 2019-07-17 2020-11-03 Atomera Incorporated Semiconductor devices including hyper-abrupt junction region including a superlattice
US10840388B1 (en) 2019-07-17 2020-11-17 Atomera Incorporated Varactor with hyper-abrupt junction region including a superlattice
US10879357B1 (en) 2019-07-17 2020-12-29 Atomera Incorporated Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice
US10937868B2 (en) 2019-07-17 2021-03-02 Atomera Incorporated Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices
US10868120B1 (en) 2019-07-17 2020-12-15 Atomera Incorporated Method for making a varactor with hyper-abrupt junction region including a superlattice
US10825902B1 (en) 2019-07-17 2020-11-03 Atomera Incorporated Varactor with hyper-abrupt junction region including spaced-apart superlattices
US11437487B2 (en) 2020-01-14 2022-09-06 Atomera Incorporated Bipolar junction transistors including emitter-base and base-collector superlattices
US11177351B2 (en) 2020-02-26 2021-11-16 Atomera Incorporated Semiconductor device including a superlattice with different non-semiconductor material monolayers
US11302823B2 (en) 2020-02-26 2022-04-12 Atomera Incorporated Method for making semiconductor device including a superlattice with different non-semiconductor material monolayers
US11075078B1 (en) 2020-03-06 2021-07-27 Atomera Incorporated Method for making a semiconductor device including a superlattice within a recessed etch
US11469302B2 (en) 2020-06-11 2022-10-11 Atomera Incorporated Semiconductor device including a superlattice and providing reduced gate leakage
US11569368B2 (en) 2020-06-11 2023-01-31 Atomera Incorporated Method for making semiconductor device including a superlattice and providing reduced gate leakage
US11848356B2 (en) 2020-07-02 2023-12-19 Atomera Incorporated Method for making semiconductor device including superlattice with oxygen and carbon monolayers
US20220285152A1 (en) 2021-03-03 2022-09-08 Atomera Incorporated Radio frequency (rf) semiconductor devices including a ground plane layer having a superlattice
US11810784B2 (en) 2021-04-21 2023-11-07 Atomera Incorporated Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer
US11923418B2 (en) 2021-04-21 2024-03-05 Atomera Incorporated Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer
US11728385B2 (en) 2021-05-26 2023-08-15 Atomera Incorporated Semiconductor device including superlattice with O18 enriched monolayers
US11682712B2 (en) 2021-05-26 2023-06-20 Atomera Incorporated Method for making semiconductor device including superlattice with O18 enriched monolayers
US11631584B1 (en) 2021-10-28 2023-04-18 Atomera Incorporated Method for making semiconductor device with selective etching of superlattice to define etch stop layer
US11721546B2 (en) 2021-10-28 2023-08-08 Atomera Incorporated Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms
CN116296562B (zh) * 2023-05-25 2023-08-01 德州泽烁建筑工程有限公司 一种公路柱芯样品切取装置

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US20020036778A1 (en) * 2000-09-28 2002-03-28 Gregg Wagner Handheld, portable color measuring device with display

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US4050762A (en) * 1976-11-10 1977-09-27 Everett/Charles, Inc. Telescoping spring probe having separate wiper contact member
US5055072A (en) * 1989-10-13 1991-10-08 Minnesota Mining And Manufacturing Company Press-fit contact pin
US6095673A (en) * 1998-01-20 2000-08-01 The Whitaker Corporation Co-extruded light pipe
US20020021125A1 (en) * 2000-03-24 2002-02-21 Helmut Fischer Method and apparatus for the nondestructive measurement of the thickness of thin layers
US20020008511A1 (en) * 2000-07-06 2002-01-24 Colin Davies Dual mode coating thickness measuring instrument
US20020036778A1 (en) * 2000-09-28 2002-03-28 Gregg Wagner Handheld, portable color measuring device with display

Also Published As

Publication number Publication date
US7148712B1 (en) 2006-12-12
WO2007001790A2 (fr) 2007-01-04
US20060290362A1 (en) 2006-12-28

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