WO2006132168A1 - Electronic component package, method for manufacturing the same, and lid material for electronic component package - Google Patents

Electronic component package, method for manufacturing the same, and lid material for electronic component package Download PDF

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Publication number
WO2006132168A1
WO2006132168A1 PCT/JP2006/311189 JP2006311189W WO2006132168A1 WO 2006132168 A1 WO2006132168 A1 WO 2006132168A1 JP 2006311189 W JP2006311189 W JP 2006311189W WO 2006132168 A1 WO2006132168 A1 WO 2006132168A1
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WO
WIPO (PCT)
Prior art keywords
layer
brazing
electronic component
lid
metal layer
Prior art date
Application number
PCT/JP2006/311189
Other languages
French (fr)
Japanese (ja)
Inventor
Kazuhiro Shiomi
Masaaki Ishio
Kojiro Kobayashi
Akio Hirose
Original Assignee
Neomax Materials Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Neomax Materials Co., Ltd. filed Critical Neomax Materials Co., Ltd.
Priority to JP2007520085A priority Critical patent/JP5025471B2/en
Publication of WO2006132168A1 publication Critical patent/WO2006132168A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Definitions

  • the present invention relates to an electronic component package for housing an electronic component.
  • the electronic component package has, for example, a case formed such that a recess for housing an electronic component is open at the top, and a lid brazed to the periphery of the opening of the case so as to seal the recess.
  • the concave portion forms a storage space portion of the electronic component isolated from the outside by welding of the lid.
  • the lid usually comprises a base layer formed of a metal having a low thermal expansion coefficient lower than that of Fe such as Kovar (trade name), and a Ni layer formed of Ni is laminated on both sides thereof. ing.
  • various soft brazing alloys such as Sn-Ag alloy, Bi-Ag alloy and In-Sn alloy are used.
  • An electronic component package containing electronic components is fixed by brazing to a predetermined position on a wiring board along with other electronic components.
  • the electronic components such as the electronic component cage are disposed on a wiring substrate for mass production and the like, and the entire substrate is passed through a heating furnace to simultaneously substrate each electronic component.
  • the electronic component package is heated when the case containing the electronic component and the lid are soldered, and is again heated when brazing is performed on the wiring substrate.
  • the brazing material used to braze the lid to the case is preferably a material with a high melting point, but if brazing is performed at a high temperature, the electronic components stored in the package will deteriorate or their durability will deteriorate. There is a fear.
  • Patent Document 1 when brazing a case and a lid via a welding layer, Sn-based brazing filler metal is used as a soft brazing material. Alloy and using Sn atoms of the brazing material during brazing and Ni provided on the case and lid Diffusion reaction with Ni atoms of the layer to form a NiSn-based intermetallic compound layer, and the welding layer is a brazing material layer consisting of a non-diffusion reaction portion of the brazing material, and the brazing material layer is a NiSn-based metal It has been proposed to use a structure sandwiched by compound layers. The formation of the welding layer makes it possible to improve the heat resistance of the welding layer which joins the case and the lid while enabling brazing at a low temperature.
  • Patent Document 1 International Publication WO02Z078085
  • the present invention has been made in view of the strong problem, and the heat resistance is excellent between the case and the lid even if the lid is brazed to the case at a relatively low temperature near the melting point of the brazing material.
  • An electronic component package and a method for manufacturing the same, and a lid of the electronic component package, the welding layer can be formed quickly, which makes it possible to obtain excellent productivity and to prevent characteristic deterioration of the electronic component housed in the package. It aims at providing a lid material suitable as a body.
  • the inventors of the present invention have intensively studied the above problems, and have found the following facts.
  • the intermetallic compound mainly Ni Sn
  • Ni Sn which also forms Ni and Sn forces formed at the interface of the Ni layer by the diffusion reaction between the Ni atoms of the Ni layer and the Sn atoms of the brazing material has a large effect of suppressing the diffusion of Ni atoms
  • intermetallic compounds mainly (NiFe) Sn
  • intermetallic compounds formed by the diffusion reaction between the Sn atoms of the brazing material and the Ni atoms and Fe atoms of the Ni-Fe alloy do not easily prevent the diffusion, the intermetallization occurs in a very short time.
  • the compound grows.
  • the present invention has been completed based on strong findings.
  • the electronic component package according to the present invention has a recess for housing the electronic component, and the recess is configured to seal the case including the opening, the welding layer, and the recess of the case.
  • the lid is brazed to the outer periphery of the recess opening of the case via the welding layer, the case is laminated on the outer periphery of the recess opening, and contains 5.0% to 20 mas S of Fe.
  • a first metal layer formed of a Ni—Fe alloy, and the lid is laminated on the base layer and the case side surface of the base layer, and the second metal formed of the Ni—Fe alloy Layer, the welding layer is pure Sn or a brazing material layer formed of a Sn-based brazing alloy having Sn-based alloy power as a main component, and a first intermetallic compound formed on both sides of the brazing material layer Layer and a second intermetallic compound layer, wherein the first intermetallic compound layer and the second intermetallic compound layer are connected to Ni atoms and Fe atoms of the first metal layer and the second metal layer during brazing. It is formed by the diffusion reaction of the brazing material with Sn.
  • the first metal layer and the second metal layer are formed of a Ni—Fe alloy containing 5.0 to 20 ma SS % of Fe, the first and second intermetallic compounds are formed.
  • the layer is formed of an Fe-containing NiSn-based intermetallic compound which hardly hinders the diffusion of Ni atoms. For this reason, an intermetallic compound layer is rapidly formed during brazing of the lid. Therefore, the electronic component package according to the present invention is excellent in productivity and can prevent the characteristic deterioration of the electronic component housed in the package.
  • the first intermetallic compound layer and the second intermetallic compound layer are formed by the diffusion reaction between the N source element of the first metal layer and the second metal layer and the Fe atom and the Sn atom of the brazing material.
  • the brazing material layer of the welding layer is formed in a form in which it is interspersed between the uneven first and second intermetallic compound layers.
  • the welding layer has good bondability and heat resistance.
  • the electronic component package according to the present invention in which pinholes and micro cracks are difficult to occur in the molten brazing material layer even when exposed to a high temperature state exceeding the melting point of the brazing material is excellent in airtightness.
  • the brazing material a Pb-free brazing material is preferable because Pb is likely to cause environmental pollution or an adverse effect on the human body.
  • the average thickness of the welding layer is preferably 10 to 50 / ⁇ .
  • the total area of the first intermetallic compound layer and the second intermetallic compound layer may be 25% or more and 98% or less of the total area of the welding layer. Preferred.
  • a recess for housing the electronic component there is provided a recess for housing the electronic component, and the recess is provided in the case main body provided with the opening and the outer periphery of the recess opening.
  • a case having a first metal layer formed of a Ni—Fe alloy containing 5.0 to 20 mass% of Fe, a base material layer, and the Ni—Fe alloy; Providing a second metal layer laminated on one surface, a preparation step of preparing a brazing material formed of pure Sn or a Sn-based brazing alloy mainly composed of Sn, and the first metal layer
  • the welding layer is formed by a diffusion reaction between the N source element and the Fe atoms of the first and second metal layers and the Sn atoms of the brazing material during the brazing.
  • first intermetallic compound layer and the second intermetallic compound layer formed correspondingly, and the non-diffusion of the brazing material It composed of a brazing material layer made of ⁇ , in which the brazing material layer on both sides in the first intermetallic compound layer and the second intermetallic compound layer was formed.
  • the first and second metal layers are formed of a Ni—F e alloy containing 5.0 to 20 mass% of Fe, it is about 10 to 30 ° C. higher than the melting point of the brazing material.
  • a brazing material layer is formed between the uneven first intermetallic compound layer and the second intermetallic compound layer.
  • the sandwiched welding layer can be formed quickly. Therefore, the productivity of the electronic component package is excellent.
  • the brazing material may be prepared as a brazing material layer laminated on the second metal layer of the lid.
  • the brazing material should preferably contain no Pb in view of environment and safety.
  • the welding layer may have an average thickness of 10 to 50 ⁇ m.
  • the lid for an electronic component package of the present invention comprises a base material layer, a metal layer, and a brazing material layer, and the base material layer, the metal layer and the brazing material layer are joined in the same order.
  • the brazing material layer is formed of pure Sn or a Sn-based brazing alloy having an Sn-based alloy power
  • the metal layer is formed of a Ni—Fe alloy containing 5.0 to 20 mass% of Fe. It is According to this lid, it is easy to manufacture, and a lid manufactured from the lid can be brazed directly to the case of the electronic component package without preparing the brazing material separately. This Therefore, the electronic component / cage can be easily manufactured, and is suitable as a material of the electronic component / cage lid.
  • the first and second metal layers are formed of a Ni—Fe alloy containing 5.0 to 20 mass% of Fe.
  • Ni atoms and Fe atoms of the first and second metal layers diffusely react with Sn atoms of the brazing material, and Fe is contained in the interface between the first and second metal layers and the brazing material.
  • An intermediate compound can be formed. Since this intermetallic compound does not prevent the diffusion of Ni atoms and Fe atoms, first and second intermetallic compound layers are rapidly formed on both sides of the brazing material layer.
  • the electronic component package of the present invention is excellent because it is excellent in productivity, and pinholes and cracks do not easily occur in the remelted brazing material layer even when exposed to a temperature exceeding the melting point of the brazing material. Have an air tightness.
  • FIG. 1 is a schematic cross-sectional view of an electronic component package according to an embodiment of the present invention.
  • FIG. 2 is an enlarged cross-sectional view of a welding layer of the electronic component package.
  • FIG. 3 is a schematic cross-sectional view of the package assembly before brazing the lid.
  • FIG. 4 is a plan view of a case used for an electronic component package.
  • FIG. 1 shows an electronic component package useful in the embodiment, which has an opening and a case 1 having a recess 3 for housing an electronic component P, a welding layer 20, and A lid 8 brazed to the outer periphery of the recess opening of the case 1 via the welding layer 20 so as to seal the recess 3 is provided.
  • the case 1 includes a case main body 2 provided with the recess 3 and made of a ceramic material, a metallized layer 4 integrally laminated on the outer peripheral upper portion of the side wall of the case main body 2, and And a first metal layer 5 integrally laminated to the
  • the metallized layer 4 is usually formed of a refractory metal such as W (tungsten) or Mo (molybdenum).
  • the first metal layer 5 is formed of a Ni—Fe alloy containing 5.0 to 20 mass% of Fe, preferably 7.5 to 15 mass%, and the balance Ni and unavoidable impurities.
  • the lid 8 is provided on a base layer 9, a second metal layer 10 provided on the lower surface (case side surface) of the base layer 9, and an upper surface of the base layer 9. And a surface protection metal layer 11.
  • the base material layer 9 is made of at least a metal having a thermal expansion coefficient lower than that of Fe, preferably a low thermal expansion coefficient Fe such as Kovar (trade name) which approximates the thermal expansion coefficient of ceramics which is the main component of Case 1 It is formed of an FeNi-based alloy containing Ni as a main component and an FeNiCo-based alloy containing Fe, Ni, and Co as a main component.
  • the second metal layer 10 Similar to the first metal layer 5, the second metal layer 10 also contains 5.0 to 20 mass% of Fe, preferably 7.5 to 15 mass%, and the balance is Ni and an Ni-Fe alloy which also has an unavoidable impurity power. It is done.
  • the surface protective metal layer 11 is laminated to improve the corrosion resistance, and is formed of a corrosion resistant Ni alloy mainly composed of pure Ni or Ni. The surface protective metal layer 11 is not necessarily required if it is formed as needed.
  • the welding layer 20 interposed between the case 1 and the lid 8 is, as shown in FIG. 2, a first formed integrally on the first metal layer 5 and the second metal layer 10. Intermetallic compound layer 5A and second intermetallic compound layer 1 OA, and brazing material layer 12A sandwiched therebetween.
  • the brazing material layer 12A is formed of a pure Sn or a Sn-based brazing alloy having Sn as a main component.
  • the Sn-based brazing alloy preferably contains 85% by mass or more of Sn, and contains Ag, Au, Cu, Zn, Pb, Bi, Sb, etc. which form eutectic and peritectic with Sn as other components.
  • these alloys especially those of eutectic composition, such as Sn-3. 5 mass% Ag alloy, Sn-10 mass% Au alloy, Sn-7. 7 mass% Cu alloy have a low melting point and a low melting point. It is suitable for low temperature brazing since the whole melts quickly.
  • Sn-based brazing alloys are preferably Pb-free because Pb may cause environmental pollution and adverse effects on the human body.
  • the first and second intermetallic compound layers 5 A and 10 A form the first and second metal layers 5 and 10 when the lid 8 is brazed (welded) to the case 1. It is formed by the diffusion of Ni atoms and Fe atoms of the Fe alloy to the melted brazing material side and the reaction with the atoms of Sn which is the main component of the brazing material. For this reason, as shown in FIG. 2, the first and second intermetallic compound layers 5A and 10A have an irregular shaped concavoconvex shape, and the brazing material layer 12A is integrally formed in a form in which they are intertwined. It is being done.
  • the total area of the first and second intermetallic compound layers 5A and 10A in the longitudinal cross section of the welding layer 20 is 25 to 98%, preferably 40 to 50, in area ratio to the total area of the welding layer 20. It is desirable to occupy 90%. If the first and second intermetallic compound layers are less than 25%, the amount of uneven intermetallic compounds is small, so when the electronic component package is reheated, a wide region between the first and second intermetallic compound layers is formed. Since the brazing material layer is remelted, defects such as pinholes are likely to occur in the solidified brazing material layer.
  • each layer in the longitudinal cross section of the welding layer 20 can be obtained by obtaining a composition image photograph of the cross section by means of EPMA, and the area of each layer can be determined from the contrast of the color of the image. Image analysis software can be used to calculate the area.
  • a method of manufacturing the electronic component cage will be described.
  • a case 1 and a lid 8 provided with a brazing material layer 12 are prepared. This process is called a preparation process.
  • the case 1 and the lid 8 are stacked to assemble the package assembly, and the assembly is heated to braze the case 1 and the lid 8 through the welding layer 20 (see FIG. 1). It will This process is called a brazing process.
  • FIG. 3 shows the package assembly before the lid 8 is brazed to the case 1, and the lid 8 is placed on the opening upper surface of the case 1.
  • Case 1 is substantially the same as the configuration after brazing lid 8 except for the following point.
  • a surface layer 6 formed of Au is formed on the first metal layer 5. This surface layer 6 has the function of promoting welding and also the diffusion of Ni atoms and Fe atoms from the first metal layer 5 to the brazing material side.
  • the thickness of the first metal layer 5 before brazing may be about 10 to 2 O / zm, and the thickness of the surface layer 6 may be a very thin layer of about 1 to 3 m. Since the surface layer 6 is so thin, it diffuses into the molten brazing material and disappears during brazing. For this reason, it is not shown in FIG.
  • the first metal layer 5 and the surface layer 6 of the case 1 are usually formed by plating.
  • the surface layer 6 is not necessarily formed if necessary.
  • the lid 8 has a surface protection metal layer 11 on one surface of the base material layer 9, a second metal layer 10 on the other surface, and an Sn-based brazing alloy containing pure Sn or Sn as a main component thereon.
  • a brazing filler metal layer 12 formed of a brazing filler metal which is also a force is laminated.
  • the Ni atoms and Fe atoms diffused from the first metal layer 5 and the second metal layer 10 at the time of brazing react with the Sn atoms of the brazing material forming the brazing material layer 12 to form the first intermetallic compound.
  • the layer 5A and the second intermetallic compound layer 10A are formed.
  • the thickness of the second metal layer 10 before brazing is about 3 to 20 / ⁇ , and the thickness of the brazing material layer 12 is about 30 to 50 / ⁇ .
  • the lid 8 is manufactured, for example, by punching using a lid having the same layer configuration as this.
  • the lid is usually manufactured as follows. First, the material sheet for the surface protection metal layer, the material sheet for the base material layer, and the material sheet for the second metal layer are superposed in the same order and roll pressure welding is performed. A three-layer clad material is obtained by diffusion annealing (softening annealing) of the three-layer pressure-welded material obtained by roll pressure welding. Next, a brazing material layer material sheet is stacked on the second metal layer of the clad material, and cold rolling contact is performed. The lid is manufactured by these steps.
  • the cage assembly In brazing the lid 8 to the case 1 in the brazing step, the cage assembly is heated to a temperature (brazing temperature) higher by about 10 to 30 ° C. than the melting point of the brazing material. The material is melted, held for at least 100 seconds at the brazing temperature, and solidified by cooling. Thus, it is possible to obtain a deposited layer in which a NiSn-based intermetallic compound layer containing Fe is formed to a sufficient thickness.
  • the first and second metal layers 5 and 10 are formed of a Ni—Fe alloy containing 5.0 to 20 mass% of Fe In particular, when the Fe content is 7.5 to 15 mass%, After heating to the brazing temperature, it is not necessary to maintain the temperature. However, preferably, the intermetallic compound can be sufficiently grown by holding the film for about 10 seconds or less or about 5 seconds or less. In addition, when the Fe content is about 5. Omass% or about 20mass%, although the holding at the brazing temperature is slightly required, the required amount of intermetallic compound is still maintained by a short holding time of about 100 seconds. Can grow.
  • the lower limit of the Fe content is 5. Omass%, preferably 7.5 mass%.
  • the amount of Fe exceeds 20 mass% and becomes excessive, (NiFe) Sn will be formed, and the formation of the intermetallic compound of (NiFe) Sn is suppressed.
  • the melting point means the solid-liquid onset temperature, that is, the eutectic temperature.
  • the lid 8 may be placed on the lower side and the case 1 may be placed on the upper side so that the case 1 and the lid 8 are pressed to each other. May be positively pressurized.
  • a pressing method a pressing plate made of a material, for example, a ceramic, which does not react with the surface of the package assembly is prepared, and a weight is placed on the cage assembly via the pressing plate. Even pressing can be done by biasing the plate with a spring. Pressure is, usually, 2 X 10- 4 ⁇ 1 X 10 " by 2 about 2 N / mm! ⁇ .
  • the heating atmosphere for brazing is preferably vacuum or an inert gas atmosphere such as nitrogen gas.
  • an inert gas atmosphere such as nitrogen gas.
  • the brazing material layer 12 uses the lid 8 integrally joined to the second metal layer 10, the brazing workability is good.
  • the brazing material does not necessarily have to be integrally provided as a component of the lid 8. If a brazing material is prepared separately, the brazing work will be performed as follows. First, a lid having a three-layer structure, which also has a surface protection metal layer 11, a base layer 9, and a second metal layer 10, and a brazing material are separately prepared. Next, the lid is placed on the case 1 via the brazing material to form a package assembly, and the assembly is heated and cooled to braze the lid and the case.
  • the brazing material to be separately prepared is not limited to a thin brazing filler metal, and may be a paste-like brazing material containing a brazing alloy powder in a flux.
  • a ceramic case body is provided, and a W metallized layer (layer thickness of 30 m) is formed on the outer periphery of the recess opening, and Ni or a first Ni-Fe alloy of various compositions shown in Table 1 is formed.
  • a case was prepared in which metal layers (layer thickness 15 ⁇ m) were integrally laminated in this order.
  • an Au layer layer thickness 1 m was additionally laminated on the first metal layer.
  • the first metal layer and the Au layer were formed by plating.
  • a base layer formed of FeNiCo alloy (trade name: Kovar) is provided, a Ni layer for surface protection is bonded on one side of the base layer, Ni on the other side, or various compositions shown in Table 1.
  • a lid was prepared in which a second metal layer formed of a Ni—Fe alloy and a brazing filler metal layer made of a Sn—Ag alloy on top of that were joined in this order.
  • the flat size of the lid is almost the same as the flat size of the case.
  • the lid was manufactured by punching into a predetermined flat size of a lid material force manufactured in the following manner.
  • the lid material is a thin Ni plate on one side of FeNiCo alloy sheet (material sheet for base layer). After laminating the material thin plate of the second metal layer on the other surface, cold-rolling (rolling reduction 60%) by pressure, and performing diffusion annealing to hold the obtained pressure-bonded material at 1000 ° C for several minutes It was made. By the diffusion annealing, the Ni layer, the base layer, and the second metal layer, which constitute the pressure contact material, were diffusion bonded together and each layer was softened.
  • the lid material of the four-layer structure manufactured in this manner is composed of a base layer of 80 / z m, a Ni layer of about 5 m stacked on one side, and the other side of the base layer.
  • the second metal layer of about 30 m and the brazing material layer of about 30 m were also formed.
  • the lid was overlaid on the case such that the brazing material layer of the lid was on the first metal layer side or the Au plating layer side of the case, to obtain a package assembly.
  • the package assembly was placed on the mounting plate with the lid facing downward, and the lid was brazed to the case in a nitrogen gas atmosphere. Brazing was carried out by heating to 240 ° C., holding at the same temperature or holding at the same temperature for the time shown in Table 1, and then cooling.
  • the materials of the first metal layer, the second metal layer, the presence or absence of the Au layer, the thickness of the brazing material layer, and the holding time at 240 ° C. of the samples of each package manufactured as described above are shown in Table 1 Show.
  • the package is cut in the width direction at the central portion in the lengthwise direction, and the longitudinal cross section of the welding layer (cross section at position X-X in FIG. 4) was observed by EPMA.
  • the areas of the first and second intermetallic compound layers and the brazing material layer are measured by image analysis software using the composition image photograph obtained as a result, and the first and the first with respect to the total area of these (total area of the welding layer)
  • the ratio of the total area of the two intermetallic compound layers both are collectively referred to as "the intermetallic compound layer" was determined.
  • the image analysis software used the product name Image-Pro (manufacturer: MEDIA CYVERNETICS).
  • the package of each sample was subjected to reflow (reheating) to hold at 260 ° C. for 30 seconds, and after cooling, it was subjected to an airtight test to check airtightness. Airtightness tests were conducted as follows. First, the package after reflow was placed in a closed vessel, depressurized to 0.1 kPa, and then pressurized for 2 hours at 0.5 MPa of He gas. After that, the package was removed from the closed container, and the He force was also measured by the He detector. Measurement result is 1 x 10 " 9 Pa • It is considered that there is no penetration of He gas in the package if it is less than mVsec, so the value less than this value was accepted.

Abstract

[PROBLEMS] To provide an electronic component package in which a deposition layer excellent in heat resistance can be formed quickly between a lid and a case even if they are soldered at a low temperature. [MEANS FOR SOLVING PROBLEMS] The electronic component package comprises a case (1) having a recess in which an electronic component is contained and a lid (8) soldered to the case (1) through a deposition layer (20) such that the recess is closed. The case (1) has a first metal layer (5) formed of an Ni-Fe alloy containing 5.0-20 mass% of Fe at the outer circumference of the opening of the recess, and the lid (8) has a second metal layer (10) formed of the Ni-Fe alloy. The deposition layer (20) has a solder layer (12A) formed of a solder principally comprising Sn, and first and second intermetallic compound layers (5A, 10A) formed on both sides of the solder layer through diffuse reaction of Ni atoms and Fe atoms in the first and second metal layers (5, 10) and Sn atoms in the solder.

Description

明 細 書  Specification
電子部品パッケージ、その製造方法及び電子部品パッケージ用蓋材 技術分野  Electronic component package, method for manufacturing the same, and lid material for electronic component package
[0001] 本発明は、電子部品を収納する電子部品パッケージに関する。  [0001] The present invention relates to an electronic component package for housing an electronic component.
背景技術  Background art
[0002] 半導体素子、水晶振動子、圧電振動子などの種々の電子部品は、しばしば外部環 境力も電子部品を保護するために電子部品パッケージに収納される。電子部品パッ ケージは、例えば、電子部品を収納する凹部が上部に開口するように形成されたケ ースと、前記凹部を密閉するように前記ケースの開口部の外周部にろう付けされた蓋 体とを備える。前記凹部は蓋体の溶着により、外界から遮断された電子部品の収納 空間部を形成する。前記蓋体は、通常、コバール (商品名)のような Feより熱膨張率 の低い低熱膨張率の金属で形成された基材層を備え、その両面に Niによって形成 された Ni層が積層されている。前記ろう材としては、種々の軟ろう合金、例えば Sn— Ag合金、 Bi— Ag合金、 In— Sn合金が使用される。  [0002] Various electronic components such as semiconductor devices, quartz oscillators and piezoelectric oscillators are often housed in electronic component packages in order to protect the electronic components as well as external environmental forces. The electronic component package has, for example, a case formed such that a recess for housing an electronic component is open at the top, and a lid brazed to the periphery of the opening of the case so as to seal the recess. Prepare with the body. The concave portion forms a storage space portion of the electronic component isolated from the outside by welding of the lid. The lid usually comprises a base layer formed of a metal having a low thermal expansion coefficient lower than that of Fe such as Kovar (trade name), and a Ni layer formed of Ni is laminated on both sides thereof. ing. As the brazing material, various soft brazing alloys such as Sn-Ag alloy, Bi-Ag alloy and In-Sn alloy are used.
[0003] 電子部品が収納された電子部品ノ ッケージは、他の電子部品と共に配線基板上の 所定位置にろう付けにより固定される。前記ろう付けは、通常、量産性などのために、 配線基板上に前記電子部品ノ^ケージなどの電子部品を配置し、その基板全体を 加熱炉内に通すことにより、各電子部品を同時に基板にろう付けする方法が採られる  [0003] An electronic component package containing electronic components is fixed by brazing to a predetermined position on a wiring board along with other electronic components. In the brazing, usually, the electronic components such as the electronic component cage are disposed on a wiring substrate for mass production and the like, and the entire substrate is passed through a heating furnace to simultaneously substrate each electronic component. A method of brazing to
[0004] このように、電子部品パッケージは、ー且、電子部品を収納したケースと蓋体とをろ う付けする際に加熱され、再度、配線基板上へのろう付けの際に加熱される。このた め、蓋体をケースにろう付けする際に用いられるろう材は高融点の材料が好ましいが 、高温でろう付けするとパッケージに収納された電子部品が劣化したり、その耐久性 が低下するおそれがある。 [0004] Thus, the electronic component package is heated when the case containing the electronic component and the lid are soldered, and is again heated when brazing is performed on the wiring substrate. . For this reason, the brazing material used to braze the lid to the case is preferably a material with a high melting point, but if brazing is performed at a high temperature, the electronic components stored in the package will deteriorate or their durability will deteriorate. There is a fear.
[0005] このような問題に対し、国際公開 WO02Z078085号 (特許文献 1)に開示されて いるように、ケースと蓋体とを溶着層を介してろう付けするに際し、軟ろう材として Sn 基ろう合金を使用し、ろう付けの際にろう材の Sn原子と、ケース及び蓋体に設けた Ni 層の Ni原子とを拡散反応させて NiSn系の金属間化合物層を形成し、前記溶着層を ろう材の未拡散反応部からなるろう材層と、このろう材層を前記 NiSn系の金属間化 合物層で挟んだ構造とすることが提案されている。この溶着層の形成により、低温で のろう付けを可能にしつつ、ケースと蓋体とを接合する溶着層の耐熱性を向上させる ことが可能になった。 [0005] In order to address such problems, as disclosed in International Publication WO 02Z078085 (Patent Document 1), when brazing a case and a lid via a welding layer, Sn-based brazing filler metal is used as a soft brazing material. Alloy and using Sn atoms of the brazing material during brazing and Ni provided on the case and lid Diffusion reaction with Ni atoms of the layer to form a NiSn-based intermetallic compound layer, and the welding layer is a brazing material layer consisting of a non-diffusion reaction portion of the brazing material, and the brazing material layer is a NiSn-based metal It has been proposed to use a structure sandwiched by compound layers. The formation of the welding layer makes it possible to improve the heat resistance of the welding layer which joins the case and the lid while enabling brazing at a low temperature.
特許文献 1:国際公開 WO02Z078085号  Patent Document 1: International Publication WO02Z078085
発明の開示  Disclosure of the invention
発明が解決しょうとする課題  Problem that invention tries to solve
[0006] 上記特許文献 1の技術によって溶着層の耐熱性を向上させることができたが、ろう 付けの際に前記 NiSn系の金属間化合物層を成長させるのに時間がかかり、電子部 品パッケージの生産性が劣るという問題がある。また、ろう付け温度が低くても、その 温度での保持時間が長くなると、パッケージ中に収納された電子部品の性能が低下 するおそれが生じる。 Although the heat resistance of the welded layer can be improved by the technique of Patent Document 1 above, it takes time to grow the NiSn intermetallic compound layer during brazing, and the electronic component package There is a problem that the productivity of In addition, even if the brazing temperature is low, if the holding time at that temperature is long, the performance of the electronic components housed in the package may be degraded.
[0007] 本発明は力かる問題に鑑みなされたもので、ろう材の融点近傍の比較的低温で蓋 体をケースにろう付けしても、ケースと蓋体との間に耐熱性に優れた溶着層を速やか に形成することができ、これによつて生産性に優れると共にパッケージに収納される 電子部品に特性劣化が生じ難い、電子部品ノ ッケージおよびその製造方法、並び に電子部品パッケージの蓋体として好適な蓋材を提供することを目的とする。  The present invention has been made in view of the strong problem, and the heat resistance is excellent between the case and the lid even if the lid is brazed to the case at a relatively low temperature near the melting point of the brazing material. An electronic component package and a method for manufacturing the same, and a lid of the electronic component package, the welding layer can be formed quickly, which makes it possible to obtain excellent productivity and to prevent characteristic deterioration of the electronic component housed in the package. It aims at providing a lid material suitable as a body.
課題を解決するための手段  Means to solve the problem
[0008] 本発明者は上記課題について鋭意研究したところ、以下の事実を知見した。 Ni層 の Ni原子とろう材の Sn原子との拡散反応によって Ni層の界面に生成する Ni及び Sn 力もなる金属間化合物(主として Ni Sn )は Ni原子の拡散を抑制する作用が大きい The inventors of the present invention have intensively studied the above problems, and have found the following facts. The intermetallic compound (mainly Ni Sn) which also forms Ni and Sn forces formed at the interface of the Ni layer by the diffusion reaction between the Ni atoms of the Ni layer and the Sn atoms of the brazing material has a large effect of suppressing the diffusion of Ni atoms
3 4  3 4
ため、金属間化合物を十分に形成するには長時間の加熱が必要である。しかし、ろう 材の Sn原子と Ni— Fe合金の Ni原子及び Fe原子との拡散反応によって生成する金 属間化合物 (主として (NiFe) Sn )は拡散を妨げ難いため、ごく短時間で金属間化  Therefore, heating for a long time is required to sufficiently form the intermetallic compound. However, since intermetallic compounds (mainly (NiFe) Sn) formed by the diffusion reaction between the Sn atoms of the brazing material and the Ni atoms and Fe atoms of the Ni-Fe alloy do not easily prevent the diffusion, the intermetallization occurs in a very short time.
3 4  3 4
合物が成長する。本発明は力かる知見を基に完成されたものである。  The compound grows. The present invention has been completed based on strong findings.
[0009] すなわち、本発明による電子部品パッケージは、電子部品を収納する凹部を有し、 前記凹部が開口部を備えたケースと、溶着層と、前記ケースの凹部を密閉するように 前記ケースの凹部開口部の外周部に前記溶着層を介してろう付けされた蓋体を備え 、前記ケースは前記凹部開口部の外周部に積層され、 Feを 5. 0〜20masS%を含有 する Ni— Fe合金によって形成された第 1金属層を有し、前記蓋体は基材層と、この 基材層のケース側表面に積層され、前記 Ni - Fe合金によって形成された第 2金属 層を有し、前記溶着層は純 Sn又は Snを主成分とする Sn基ろう合金力 なるろう材に よって形成されたろう材層と、このろう材層の両側に形成された第 1金属間化合物層 および第 2金属間化合物層を有し、前記第 1金属間化合物層および第 2金属間化合 物層はろう付けの際に前記第 1金属層及び第 2金属層の Ni原子及び Fe原子と前記 ろう材の Snとが拡散反応して形成されたものである。 That is, the electronic component package according to the present invention has a recess for housing the electronic component, and the recess is configured to seal the case including the opening, the welding layer, and the recess of the case. The lid is brazed to the outer periphery of the recess opening of the case via the welding layer, the case is laminated on the outer periphery of the recess opening, and contains 5.0% to 20 mas S of Fe. A first metal layer formed of a Ni—Fe alloy, and the lid is laminated on the base layer and the case side surface of the base layer, and the second metal formed of the Ni—Fe alloy Layer, the welding layer is pure Sn or a brazing material layer formed of a Sn-based brazing alloy having Sn-based alloy power as a main component, and a first intermetallic compound formed on both sides of the brazing material layer Layer and a second intermetallic compound layer, wherein the first intermetallic compound layer and the second intermetallic compound layer are connected to Ni atoms and Fe atoms of the first metal layer and the second metal layer during brazing. It is formed by the diffusion reaction of the brazing material with Sn.
[0010] この電子部品パッケージによると、第 1金属層および第 2金属層は、 Feを 5. 0〜20 maSS%含む Ni— Fe合金で形成されるので、第 1,第 2金属間化合物層は Ni原子の 拡散を妨げ難い、 Feを含む NiSn系の金属間化合物で形成される。このため、蓋体 のろう付けの際に、金属間化合物層が速やかに形成される。従って、本発明に係る 電子部品パッケージは生産性に優れ、またパッケージに収納される電子部品の特性 劣化を防止することができる。また、第 1金属間化合物層および第 2金属間化合物層 は、第 1金属層および第 2金属層の N源子及び Fe原子とろう材の Sn原子とが拡散 反応により形成されたものであるから、溶着層のろう材層は、凹凸状の第 1、第 2金属 間化合物層の間に入り組んだ形態に形成される。このため、溶着層は、良好な接合 性及び耐熱性を備える。このため、ろう材の融点超の高温状態に曝されても、溶融し たろう材層にピンホールやミクロクラックが生じ難ぐ本発明に係る電子部品ノッケー ジは気密性に優れる。 According to this electronic component package, since the first metal layer and the second metal layer are formed of a Ni—Fe alloy containing 5.0 to 20 ma SS % of Fe, the first and second intermetallic compounds are formed. The layer is formed of an Fe-containing NiSn-based intermetallic compound which hardly hinders the diffusion of Ni atoms. For this reason, an intermetallic compound layer is rapidly formed during brazing of the lid. Therefore, the electronic component package according to the present invention is excellent in productivity and can prevent the characteristic deterioration of the electronic component housed in the package. The first intermetallic compound layer and the second intermetallic compound layer are formed by the diffusion reaction between the N source element of the first metal layer and the second metal layer and the Fe atom and the Sn atom of the brazing material. Thus, the brazing material layer of the welding layer is formed in a form in which it is interspersed between the uneven first and second intermetallic compound layers. For this reason, the welding layer has good bondability and heat resistance. For this reason, the electronic component package according to the present invention in which pinholes and micro cracks are difficult to occur in the molten brazing material layer even when exposed to a high temperature state exceeding the melting point of the brazing material is excellent in airtightness.
[0011] 前記電子部品パッケージにおいて、前記ろう材としては、 Pbは環境汚染や人体へ の悪影響のおそれがあるため、 Pbを含まないろう材が好ましい。また、前記溶着層の 平均厚さは、 10〜50 /ζ πιとすることが好ましい。また、前記溶着層の縦断面におい て、前記第 1金属間化合物層及び第 2金属間化合物層の合計面積は、前記溶着層 の全面積に対して 25%以上、 98%以下とすることが好まし 、。  [0011] In the electronic component package, as the brazing material, a Pb-free brazing material is preferable because Pb is likely to cause environmental pollution or an adverse effect on the human body. Further, the average thickness of the welding layer is preferably 10 to 50 / ιπι. In the longitudinal section of the welding layer, the total area of the first intermetallic compound layer and the second intermetallic compound layer may be 25% or more and 98% or less of the total area of the welding layer. Preferred.
[0012] また、本発明の電子部品パッケージの製造方法は、電子部品を収納する凹部を有 し、前記凹部が開口部を備えたケース本体及び前記凹部開口部の外周部に設けら れ、 Feを 5. 0〜20mass%を含有する Ni— Fe合金によって形成された第 1金属層を 備えたケースと、基材層及び前記 Ni— Fe合金によって形成され、前記基材層の一 方の表面に積層形成された第 2金属層を備えた蓋体と、純 Sn又は Snを主成分とす る Sn基ろう合金によって形成されたろう材を準備する準備工程と、前記第 1金属層と 第 2金属層との間に前記ろう材を挟むように前記ケースと蓋体とを重ね合わせたパッ ケージ組立体を組み立て、前記パッケージ組立体を加熱して前記ケースと蓋体とを 溶着層を介してろう付けするろう付け工程を有し、前記溶着層はろう付けの際に前記 第 1金属層及び第 2金属層の N源子及び Fe原子と前記ろう材の Sn原子とが拡散反 応して形成された第 1金属間化合物層および第 2金属間化合物層と、前記ろう材の 未拡散反応部からなるろう材層とからなり、前記ろう材層の両側に前記第 1金属間化 合物層および第 2金属間化合物層が形成されたものである。 Further, according to the method of manufacturing an electronic component package of the present invention, there is provided a recess for housing the electronic component, and the recess is provided in the case main body provided with the opening and the outer periphery of the recess opening. A case having a first metal layer formed of a Ni—Fe alloy containing 5.0 to 20 mass% of Fe, a base material layer, and the Ni—Fe alloy; Providing a second metal layer laminated on one surface, a preparation step of preparing a brazing material formed of pure Sn or a Sn-based brazing alloy mainly composed of Sn, and the first metal layer A package assembly in which the case and the lid are stacked so as to sandwich the brazing material between the second metal layer and the second metal layer, and heating the package assembly to weld the case and the lid; And the welding layer is formed by a diffusion reaction between the N source element and the Fe atoms of the first and second metal layers and the Sn atoms of the brazing material during the brazing. Of the first intermetallic compound layer and the second intermetallic compound layer formed correspondingly, and the non-diffusion of the brazing material It composed of a brazing material layer made of 応部, in which the brazing material layer on both sides in the first intermetallic compound layer and the second intermetallic compound layer was formed.
[0013] この製造方法によると、第 1、第 2金属層が 5. 0〜20mass%の Feを含有した Ni— F e合金で形成されるため、ろう材の融点より 10〜30°C程度高い、比較的低温のろう付 け温度に加熱後、せいぜい 100秒程度保持し、冷却するだけで、凹凸状の第 1金属 間化合物層と第 2金属間化合物層との間にろう材層が挟持された溶着層を速やかに 形成することができる。このため、電子部品パッケージの生産性に優れる。  According to this manufacturing method, since the first and second metal layers are formed of a Ni—F e alloy containing 5.0 to 20 mass% of Fe, it is about 10 to 30 ° C. higher than the melting point of the brazing material. After heating to a high, relatively low temperature brazing temperature, holding it for at least 100 seconds and cooling it, a brazing material layer is formed between the uneven first intermetallic compound layer and the second intermetallic compound layer. The sandwiched welding layer can be formed quickly. Therefore, the productivity of the electronic component package is excellent.
[0014] 前記製造方法において、前記第 1金属層又は第 2金属層の上に Auによって表面 層を形成することが好ましい。これによつて、第 1、第 2金属間化合物層の生成がより 促進され、生産性を向上させることができる。また、前記ろう材は、前記蓋体の前記第 2金属層の上に積層されたろう材層として準備してもよい。また、前記ろう材は、環境 、安全性への見地力も Pbを含有しないものがよい。また、前記溶着層は、その平均 厚さを 10〜50 μ mとするのがよい。  In the above manufacturing method, it is preferable to form a surface layer of Au on the first metal layer or the second metal layer. Thereby, the formation of the first and second intermetallic compound layers can be further promoted, and the productivity can be improved. Further, the brazing material may be prepared as a brazing material layer laminated on the second metal layer of the lid. In addition, the brazing material should preferably contain no Pb in view of environment and safety. Further, the welding layer may have an average thickness of 10 to 50 μm.
[0015] また、本発明の電子部品パッケージ用蓋材は、基材層と、金属層と、ろう材層を備 え、前記基材層、金属層及びろう材層が同順序で接合され、前記ろう材層が純 Sn又 は Snを主成分とする Sn基ろう合金力 なるろう材によって形成され、前記金属層が F eを 5. 0〜20mass%を含有する Ni— Fe合金によって形成されたものである。この蓋 材によれば、その製造が容易であり、またろう材を別途準備することなぐ当該蓋材か ら製作した蓋体を電子部品ノ ッケージのケースに直接ろう付けすることができる。この ため、前記電子部品ノ¾ /ケージを容易に製造することができ、電子部品ノ¾ /ケージ用 蓋体の素材として好適である。 Further, the lid for an electronic component package of the present invention comprises a base material layer, a metal layer, and a brazing material layer, and the base material layer, the metal layer and the brazing material layer are joined in the same order. The brazing material layer is formed of pure Sn or a Sn-based brazing alloy having an Sn-based alloy power, and the metal layer is formed of a Ni—Fe alloy containing 5.0 to 20 mass% of Fe. It is According to this lid, it is easy to manufacture, and a lid manufactured from the lid can be brazed directly to the case of the electronic component package without preparing the brazing material separately. this Therefore, the electronic component / cage can be easily manufactured, and is suitable as a material of the electronic component / cage lid.
[0016] 以上説明したように、本発明の電子部品ノ ッケージによれば、第 1、第 2金属層は、 Feを 5. 0〜20mass%含む Ni— Fe合金で形成されているので、ろう付けの際に第 1 、第 2金属層の Ni原子及び Fe原子とろう材の Sn原子とが拡散反応して第 1、第 2金 属層とろう材の界面に Feを含む NiSn系の金属間化合物を形成することができる。こ の金属間化合物は Ni原子、 Fe原子の拡散を妨げないため、ろう材層の両側に第 1、 第 2金属間化合物層が速やかに形成される。このため、本発明の電子部品パッケ一 ジは、生産性に優れ、またろう材の融点超の温度に曝されても、再溶融したろう材層 にピンホールやクラックが生じ難 、ため、優れた気密性を備える。  As described above, according to the electronic component package of the present invention, the first and second metal layers are formed of a Ni—Fe alloy containing 5.0 to 20 mass% of Fe. At the time of application, Ni atoms and Fe atoms of the first and second metal layers diffusely react with Sn atoms of the brazing material, and Fe is contained in the interface between the first and second metal layers and the brazing material. An intermediate compound can be formed. Since this intermetallic compound does not prevent the diffusion of Ni atoms and Fe atoms, first and second intermetallic compound layers are rapidly formed on both sides of the brazing material layer. For this reason, the electronic component package of the present invention is excellent because it is excellent in productivity, and pinholes and cracks do not easily occur in the remelted brazing material layer even when exposed to a temperature exceeding the melting point of the brazing material. Have an air tightness.
図面の簡単な説明  Brief description of the drawings
[0017] [図 1]実施形態に力かる電子部品パッケージの断面模式図である。 FIG. 1 is a schematic cross-sectional view of an electronic component package according to an embodiment of the present invention.
[図 2]電子部品パッケージの溶着層の断面拡大図である。  FIG. 2 is an enlarged cross-sectional view of a welding layer of the electronic component package.
[図 3]蓋体をろう付けする前のパッケージ組立体の断面模式図である。  FIG. 3 is a schematic cross-sectional view of the package assembly before brazing the lid.
[図 4]電子部品パッケージに用いるケースの平面図である。  FIG. 4 is a plan view of a case used for an electronic component package.
符号の説明  Explanation of sign
[0018] 1 ケース [0018] 1 case
5 第 1金属層  5 First metal layer
8 蓋体  8 lid
10 第 2金属層  10 Second metal layer
20 溶着層  20 welding layer
5A 第 1金属間化合物層  5A First Intermetallic Compound Layer
10A 第 2金属間化合物層  10A Second Intermetallic Compound Layer
12A ろう材層  12A brazing material layer
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0019] 以下、本発明による電子部品パッケージの実施形態を図面を参照して説明する。 Hereinafter, embodiments of the electronic component package according to the present invention will be described with reference to the drawings.
図 1は、実施形態に力かる電子部品ノ ッケージを示しており、この電子部品ノッケー ジは、開口部を備え、電子部品 Pを収納する凹部 3を有するケース 1と、溶着層 20と、 前記凹部 3を密閉するように前記ケース 1の凹部開口部の外周部に前記溶着層 20を 介してろう付けされた蓋体 8とを有する。 FIG. 1 shows an electronic component package useful in the embodiment, which has an opening and a case 1 having a recess 3 for housing an electronic component P, a welding layer 20, and A lid 8 brazed to the outer periphery of the recess opening of the case 1 via the welding layer 20 so as to seal the recess 3 is provided.
[0020] 前記ケース 1は、前記凹部 3が設けられ、セラミック材によって形成されたケース本 体 2と、前記ケース本体 2の側壁の外周上部に一体的に積層されたメタライズ層 4と、 その上に一体的に積層された第 1金属層 5とを有する。前記メタライズ層 4は、通常、 W (タングステン)や Mo (モリブデン)などの高融点金属によって形成される。前記第 1金属層 5は、 Feを 5. 0〜20mass%、好ましくは 7. 5〜15mass%含有し、残部 Ni及 び不可避的不純物からなる Ni—Fe合金によって形成されている。  The case 1 includes a case main body 2 provided with the recess 3 and made of a ceramic material, a metallized layer 4 integrally laminated on the outer peripheral upper portion of the side wall of the case main body 2, and And a first metal layer 5 integrally laminated to the The metallized layer 4 is usually formed of a refractory metal such as W (tungsten) or Mo (molybdenum). The first metal layer 5 is formed of a Ni—Fe alloy containing 5.0 to 20 mass% of Fe, preferably 7.5 to 15 mass%, and the balance Ni and unavoidable impurities.
[0021] 一方、前記蓋体 8は、基材層 9と、前記基材層 9の下面 (ケース側表面)に設けられ た第 2金属層 10と、前記基材層 9の上面に設けられた表面保護金属層 11を有して 、 る。前記基材層 9は、少なくとも Feより熱膨張率が低い金属、好ましくはケース 1の主 要材であるセラミックスの熱膨張率に近似するようなコバール (商品名)等の低熱膨張 率の Fe, Niを主成分とする FeNi基合金、 Fe, Ni, Coを主成分とする FeNiCo基合 金によって形成される。具体的には、 Fe- (36〜50mass%) Ni合金、 Fe— (20〜3 Omass%) Ni- (l〜20mass%) Co合金を例示することができる。前記第 2金属層 10 も前記第 1金属層 5と同様、 Feを 5. 0〜20mass%、好ましくは 7. 5〜15mass%含有 し、残部 Ni及び不可避的不純物力もなる Ni— Fe合金によって形成されている。前記 表面保護金属層 11は耐食性を向上させるために積層されたもので、純 Niや Niを主 成分とする耐食性 Ni合金で形成される。なお、この表面保護金属層 11は必要に応じ て形成すればよぐ必ずしも必要としない。  On the other hand, the lid 8 is provided on a base layer 9, a second metal layer 10 provided on the lower surface (case side surface) of the base layer 9, and an upper surface of the base layer 9. And a surface protection metal layer 11. The base material layer 9 is made of at least a metal having a thermal expansion coefficient lower than that of Fe, preferably a low thermal expansion coefficient Fe such as Kovar (trade name) which approximates the thermal expansion coefficient of ceramics which is the main component of Case 1 It is formed of an FeNi-based alloy containing Ni as a main component and an FeNiCo-based alloy containing Fe, Ni, and Co as a main component. Specifically, Fe- (36 to 50 mass%) Ni alloy, Fe-(20 to 3 Omass%) Ni- (l to 20 mass%) Co alloy can be exemplified. Similar to the first metal layer 5, the second metal layer 10 also contains 5.0 to 20 mass% of Fe, preferably 7.5 to 15 mass%, and the balance is Ni and an Ni-Fe alloy which also has an unavoidable impurity power. It is done. The surface protective metal layer 11 is laminated to improve the corrosion resistance, and is formed of a corrosion resistant Ni alloy mainly composed of pure Ni or Ni. The surface protective metal layer 11 is not necessarily required if it is formed as needed.
[0022] 前記ケース 1と蓋体 8との間に介在する溶着層 20は、図 2に示すように、前記第 1金 属層 5および第 2金属層 10に一体的に形成された第 1金属間化合物層 5Aおよび第 2金属間化合物層 1 OAと、その間に挟み込まれたろう材層 12Aとで構成される。  The welding layer 20 interposed between the case 1 and the lid 8 is, as shown in FIG. 2, a first formed integrally on the first metal layer 5 and the second metal layer 10. Intermetallic compound layer 5A and second intermetallic compound layer 1 OA, and brazing material layer 12A sandwiched therebetween.
[0023] 前記ろう材層 12Aは、純 Snあるいは Snを主成分とする Sn基ろう合金力 なるろう 材で形成されている。 Sn基ろう合金は、好ましくは Snが 85mass%以上のものがよぐ 他成分として Snと共晶、包晶を生成する Ag、 Au、 Cu、 Zn、 Pb、 Bi、 Sb等を適宜含 有することができる。これらの合金の内、特に共晶組成のもの、例えば Sn— 3. 5mass %Ag合金、 Sn—10mass%Au合金、 Sn— 0. 7mass%Cu合金は低い融点でろう材 全体が速やかに溶融するので、低温でろう付けするには好適である。 Pbは環境汚染 や人体へ悪影響を及ぼすおそれがあるので、 Sn基ろう合金は Pbフリーのものが好ま しい。 The brazing material layer 12A is formed of a pure Sn or a Sn-based brazing alloy having Sn as a main component. The Sn-based brazing alloy preferably contains 85% by mass or more of Sn, and contains Ag, Au, Cu, Zn, Pb, Bi, Sb, etc. which form eutectic and peritectic with Sn as other components. Can. Among these alloys, especially those of eutectic composition, such as Sn-3. 5 mass% Ag alloy, Sn-10 mass% Au alloy, Sn-7. 7 mass% Cu alloy have a low melting point and a low melting point. It is suitable for low temperature brazing since the whole melts quickly. Sn-based brazing alloys are preferably Pb-free because Pb may cause environmental pollution and adverse effects on the human body.
[0024] 前記第 1,第 2金属間化合物層 5A, 10Aは、蓋体 8をケース 1にろう付け (溶着)す る際に前記第 1,第 2金属層 5, 10を形成する Ni— Fe合金の Ni原子、 Fe原子が溶 融したろう材側に拡散し、ろう材の主成分である Snの原子と反応して形成されたもの である。このため、第 1,第 2金属間化合物層 5A, 10Aは、図 2に示すように、不定形 の凹凸状を成しており、その間にろう材層 12Aが入り組んだ形態で一体的に形成さ れている。  The first and second intermetallic compound layers 5 A and 10 A form the first and second metal layers 5 and 10 when the lid 8 is brazed (welded) to the case 1. It is formed by the diffusion of Ni atoms and Fe atoms of the Fe alloy to the melted brazing material side and the reaction with the atoms of Sn which is the main component of the brazing material. For this reason, as shown in FIG. 2, the first and second intermetallic compound layers 5A and 10A have an irregular shaped concavoconvex shape, and the brazing material layer 12A is integrally formed in a form in which they are intertwined. It is being done.
[0025] 前記溶着層 20の縦断面における前記第 1,第 2金属間化合物層 5A, 10Aの合計 面積は、溶着層 20の全面積に対して面積割合で 25〜98%、好ましくは 40〜90% を占めるようにすることが望ましい。前記第 1,第 2金属間化合物層が 25%未満では 凹凸状の金属間化合物が少ないため、電子部品パッケージを再加熱した際に、第 1 ,第 2金属間化合物層の間の広い領域でろう材層が再溶融するため、凝固後のろう 材層にピンホール等の欠陥が生じやすくなる。一方、 98%を超えると、第 1,第 2金属 間化合物層の間に挟持されるろう材の量が少なくなるので、溶着層全体として脆くな り、接合性が低下するようになる。前記溶着層 20の縦断面における各層の面積は、 E PMAによって断面の組成像写真を得て、画像の色のコントラストから各層の面積を 求めることができる。面積の算出には、画像解析ソフトを利用することができる。  The total area of the first and second intermetallic compound layers 5A and 10A in the longitudinal cross section of the welding layer 20 is 25 to 98%, preferably 40 to 50, in area ratio to the total area of the welding layer 20. It is desirable to occupy 90%. If the first and second intermetallic compound layers are less than 25%, the amount of uneven intermetallic compounds is small, so when the electronic component package is reheated, a wide region between the first and second intermetallic compound layers is formed. Since the brazing material layer is remelted, defects such as pinholes are likely to occur in the solidified brazing material layer. On the other hand, if it exceeds 98%, the amount of the brazing material sandwiched between the first and second intermetallic compound layers decreases, so the entire deposited layer becomes brittle and the bondability is lowered. The area of each layer in the longitudinal cross section of the welding layer 20 can be obtained by obtaining a composition image photograph of the cross section by means of EPMA, and the area of each layer can be determined from the contrast of the color of the image. Image analysis software can be used to calculate the area.
[0026] ここで、前記電子部品ノ^ケージの製造方法について説明する。まず、図 3に示す ように、ケース 1と、ろう材層 12を備えた蓋体 8を準備する。この工程を準備工程という 。次に、ケース 1と蓋体 8とを重ね合わせてパッケージ組立体を組み立て、その組立 体を加熱して前記ケース 1と蓋体 8とを前記溶着層 20 (図 1参照)を介してろう付けす る。この工程をろう付け工程という。  Here, a method of manufacturing the electronic component cage will be described. First, as shown in FIG. 3, a case 1 and a lid 8 provided with a brazing material layer 12 are prepared. This process is called a preparation process. Next, the case 1 and the lid 8 are stacked to assemble the package assembly, and the assembly is heated to braze the case 1 and the lid 8 through the welding layer 20 (see FIG. 1). It will This process is called a brazing process.
[0027] 図 3は、蓋体 8をケース 1にろう付けする前のパッケージ組立体を示しており、ケース 1の開口上面に蓋体 8が載置されている。なお、ろう付けの前後でケースの構成は後 述するように若干異なる点があるが、説明の便宜上、同部材あるいは対応する部材 には同符号が付されている。 [0028] 前記ケース 1は蓋体 8をろう付けした後の構成と次の点を除いてほぼ同様である。ろ う付け前には第 1金属層 5の上に Auにより形成された表面層 6が形成されている。こ の表面層 6は溶着を促進すると共に前記第 1金属層 5から Ni原子、 Fe原子がろう材 側へ拡散するのを促進する作用を有する。ろう付け前の第 1金属層 5の厚さは 10〜2 O /z m程度でよぐまた前記表面層 6の厚さは 1〜3 m程度のごく薄い層でよい。前 記表面層 6はこのように極薄いため、ろう付け時に、溶融したろう材中へ拡散し、消失 する。このため、図 1では図示されていない。前記ケース 1の第 1金属層 5、表面層 6 は、通常、めっきによって形成される。なお、前記表面層 6は必要により形成すればよ ぐ必ずしも必要としない。 FIG. 3 shows the package assembly before the lid 8 is brazed to the case 1, and the lid 8 is placed on the opening upper surface of the case 1. Although the structure of the case is slightly different before and after brazing as described later, for convenience of explanation, the same or corresponding members are denoted by the same reference numerals. Case 1 is substantially the same as the configuration after brazing lid 8 except for the following point. Before soldering, a surface layer 6 formed of Au is formed on the first metal layer 5. This surface layer 6 has the function of promoting welding and also the diffusion of Ni atoms and Fe atoms from the first metal layer 5 to the brazing material side. The thickness of the first metal layer 5 before brazing may be about 10 to 2 O / zm, and the thickness of the surface layer 6 may be a very thin layer of about 1 to 3 m. Since the surface layer 6 is so thin, it diffuses into the molten brazing material and disappears during brazing. For this reason, it is not shown in FIG. The first metal layer 5 and the surface layer 6 of the case 1 are usually formed by plating. The surface layer 6 is not necessarily formed if necessary.
[0029] 一方、前記蓋体 8は、基材層 9の片面に表面保護金属層 11が、他面に第 2金属層 10およびその上に純 Snあるいは Snを主成分とする Sn基ろう合金力もなるろう材によ つて形成されたろう材層 12が積層されている。ろう付け時に第 1金属層 5及び第 2金 属層 10から拡散した Ni原子及び Fe原子と、前記ろう材層 12を形成するろう材の Sn 原子とが反応して、前記第 1金属間化合物層 5A及び第 2金属間化合物層 10Aを形 成する。ケース 1の凹部開口部には、第 1金属層 5がないので、当然のことながら第 2 金属間化合物層(図 1では図示省略)しか形成されない。ろう付け前の前記第 2金属 層 10の厚さは 3〜20 /ζ πι程度とされ、またろう材層 12の厚さは 30〜50 /ζ πι程度とさ れる。  On the other hand, the lid 8 has a surface protection metal layer 11 on one surface of the base material layer 9, a second metal layer 10 on the other surface, and an Sn-based brazing alloy containing pure Sn or Sn as a main component thereon. A brazing filler metal layer 12 formed of a brazing filler metal which is also a force is laminated. The Ni atoms and Fe atoms diffused from the first metal layer 5 and the second metal layer 10 at the time of brazing react with the Sn atoms of the brazing material forming the brazing material layer 12 to form the first intermetallic compound. The layer 5A and the second intermetallic compound layer 10A are formed. Since the first metal layer 5 is not present in the recess opening of the case 1, naturally only the second intermetallic compound layer (not shown in FIG. 1) is formed. The thickness of the second metal layer 10 before brazing is about 3 to 20 / ζπι, and the thickness of the brazing material layer 12 is about 30 to 50 / ζπι.
[0030] 前記蓋体 8は、これと同じ層構成の蓋材を用いて、例えば打ち抜き加工によって製 作される。前記蓋材は、通常、以下のようにして製作される。まず、表面保護金属層 用素材シート、基材層用素材シート、第 2金属層用素材シートを同順序で重ね合わ せてロール圧接する。ロール圧接により得られた 3層圧接材を拡散焼鈍 (軟化焼鈍) して 3層クラッド材を得る。次に、そのクラッド材の第 2金属層の上にろう材層用素材シ ートを重ね合わせ、冷間にてロール圧接する。これらの工程により前記蓋材が製作さ れる。  The lid 8 is manufactured, for example, by punching using a lid having the same layer configuration as this. The lid is usually manufactured as follows. First, the material sheet for the surface protection metal layer, the material sheet for the base material layer, and the material sheet for the second metal layer are superposed in the same order and roll pressure welding is performed. A three-layer clad material is obtained by diffusion annealing (softening annealing) of the three-layer pressure-welded material obtained by roll pressure welding. Next, a brazing material layer material sheet is stacked on the second metal layer of the clad material, and cold rolling contact is performed. The lid is manufactured by these steps.
[0031] 前記ろう付け工程において、前記蓋体 8をケース 1にろう付けする際、ノッケージ組 立体をろう材の融点より 10〜30°C程度高い温度 (ろう付け温度)〖こ加熱し、ろう材を 溶融させ、前記ろう付け温度でせいぜい 100秒程度保持し、冷却凝固させることによ り、 Feを含む NiSn系の金属間化合物層が十分な厚さに形成された溶着層が得られ る。 In brazing the lid 8 to the case 1 in the brazing step, the cage assembly is heated to a temperature (brazing temperature) higher by about 10 to 30 ° C. than the melting point of the brazing material. The material is melted, held for at least 100 seconds at the brazing temperature, and solidified by cooling. Thus, it is possible to obtain a deposited layer in which a NiSn-based intermetallic compound layer containing Fe is formed to a sufficient thickness.
[0032] 前記第 1、第 2金属層 5, 10は、 Feを 5. 0〜20mass%含有する Ni— Fe合金で形 成されている力 特に Fe含有量が 7. 5〜15mass%では、前記ろう付け温度に加熱 後、必ずしもその温度に保持する必要はない。もっとも、好ましくは 10秒程度以下あ るいは 5秒程度以下保持することで、金属間化合物を十分に成長させることができる 。また、 Fe含有量が 5. Omass%程度あるいは 20mass%程度になると、前記ろう付け 温度での保持が若干必要になるが、それでも 100秒程度の短時間の保持により、必 要量の金属間化合物を成長させることができる。前記 Fe量が 5. 0%未満では、第 1、 第 2金属層の界面に形成される金属間化合物中の Fe量が不足し、 Ni原子の拡散が 抑制されるようになる。このため、本発明では Fe量の下限を 5. Omass%とし、好ましく は 7. 5mass%とするのがよい。一方、 Fe量が 20mass%を超えて過多になると、(NiF e) Snが生成するようになり、 (NiFe) Snの金属間化合物の生成が抑制されるため The first and second metal layers 5 and 10 are formed of a Ni—Fe alloy containing 5.0 to 20 mass% of Fe In particular, when the Fe content is 7.5 to 15 mass%, After heating to the brazing temperature, it is not necessary to maintain the temperature. However, preferably, the intermetallic compound can be sufficiently grown by holding the film for about 10 seconds or less or about 5 seconds or less. In addition, when the Fe content is about 5. Omass% or about 20mass%, although the holding at the brazing temperature is slightly required, the required amount of intermetallic compound is still maintained by a short holding time of about 100 seconds. Can grow. If the amount of Fe is less than 5.0%, the amount of Fe in the intermetallic compound formed at the interface between the first and second metal layers is insufficient, and the diffusion of Ni atoms is suppressed. Therefore, in the present invention, the lower limit of the Fe content is 5. Omass%, preferably 7.5 mass%. On the other hand, if the amount of Fe exceeds 20 mass% and becomes excessive, (NiFe) Sn will be formed, and the formation of the intermetallic compound of (NiFe) Sn is suppressed.
2 3 4 2 3 4
、後者の金属間化合物量が不足するようになる。なお、 Sn基ろう合金のような軟ろう では、融点とは固液開始温度すなわち共晶温度を意味する。  And the latter amount of intermetallic compounds will be insufficient. In the case of a soft solder such as a Sn-based braze alloy, the melting point means the solid-liquid onset temperature, that is, the eutectic temperature.
[0033] また、ろう付けに際して、蓋体 8を下側に、ケース 1が上側になるように載置して加熱 するだけでもよ 、が、ケース 1と蓋体 8とが互いに押圧されるように積極的に加圧して もよい。これによつてろう付けの際に、溶着層の金属間化合物層中のボイドの生成を 抑制することができ、溶着の安定性を向上させることができる。加圧方法としては、パ ッケージ組立体の表面と反応しな 、材料、例えばセラミックスで形成された押さえ板 を用意し、ノ^ケージ組立体に前記押さえ板を介して重りを載せることにより、また押 さえ板をスプリングによって付勢することによって行うことができる。加圧力は、通常、 2 X 10— 4〜1 X 10"2N/mm2程度でよ!ヽ。 In addition, during brazing, the lid 8 may be placed on the lower side and the case 1 may be placed on the upper side so that the case 1 and the lid 8 are pressed to each other. May be positively pressurized. Thus, during brazing, the formation of voids in the intermetallic compound layer of the welding layer can be suppressed, and welding stability can be improved. As a pressing method, a pressing plate made of a material, for example, a ceramic, which does not react with the surface of the package assembly is prepared, and a weight is placed on the cage assembly via the pressing plate. Even pressing can be done by biasing the plate with a spring. Pressure is, usually, 2 X 10- 4 ~1 X 10 " by 2 about 2 N / mm!ヽ.
[0034] ろう付けの際の加熱雰囲気は、真空あるいは窒素ガス等の不活性ガス雰囲気とす ることが好ましい。このような雰囲気中でろう付けを行うことにより、加熱による電子部 品の酸ィ匕を防止するとともに、溶着後の電子部品の収納空間を真空あるいは不活性 ガス雰囲気とすることができ、電子部品の経時変化を防止することができる。特に、水 晶振動子等の振動子を収納する場合は、共振特性向上の観点から真空下でろう付 けすることが望ましい。 The heating atmosphere for brazing is preferably vacuum or an inert gas atmosphere such as nitrogen gas. By brazing in such an atmosphere, it is possible to prevent the oxidation of the electronic component due to heating and to make the storage space of the electronic component after welding a vacuum or an inert gas atmosphere. Can be prevented from changing over time. In particular, when a vibrator such as a crystal vibrator is accommodated, brazing is performed under vacuum from the viewpoint of improving the resonance characteristic. It is desirable to
[0035] 上記実施形態では、ろう材層 12が第 2金属層 10に一体的に接合した蓋体 8を用い たので、ろう付け作業性が良好である。しかし、ろう材は必ずしも蓋材 8を構成する部 分として一体的に設ける必要はない。ろう材を別途用意した場合、ろう付け作業は以 下のようにして行われる。先ず、表面保護金属層 11、基材層 9および第 2金属層 10 力もなる 3層構造の蓋体と、ろう材とをそれぞれ別途準備する。次に、ケース 1にこの ろう材を介して前記蓋体を載置してパッケージ組立体とし、この組立体を加熱冷却し て蓋体とケースとをろう付けする。別途準備するろう材としては、薄板状ろう材に限ら ず、ろう合金粉末をフラックスに含有させたペースト状ろう材でもよい。  In the above embodiment, since the brazing material layer 12 uses the lid 8 integrally joined to the second metal layer 10, the brazing workability is good. However, the brazing material does not necessarily have to be integrally provided as a component of the lid 8. If a brazing material is prepared separately, the brazing work will be performed as follows. First, a lid having a three-layer structure, which also has a surface protection metal layer 11, a base layer 9, and a second metal layer 10, and a brazing material are separately prepared. Next, the lid is placed on the case 1 via the brazing material to form a package assembly, and the assembly is heated and cooled to braze the lid and the case. The brazing material to be separately prepared is not limited to a thin brazing filler metal, and may be a paste-like brazing material containing a brazing alloy powder in a flux.
[0036] 以下、本発明を実施例に基づいてより具体的に説明するが、本発明は上記実施形 態や以下の実施例により限定的に解釈されるものではない。  Hereinafter, the present invention will be more specifically described based on examples, but the present invention is not to be limitedly interpreted by the above embodiment and the following examples.
実施例  Example
[0037] 以下の要領により、種々のケースと種々の蓋体とが準備され、これらを用いて種々 の電子部品パッケージ力 なる試料が製作された。  [0037] Various cases and various lids were prepared in the following manner, and these were used to produce various electronic component package force samples.
[0038] セラミック製のケース本体を備え、その凹部開口部の外周部に Wメタライズ層(層厚 30 m )、及び Niあるいは表 1に示す種々の組成の Ni— Fe合金で形成された第 1 金属層(層厚 15 μ m )がこの順序で一体的に積層されたケースを準備した。一部の ケースについては、前記第 1金属層の上にさらに Au層(層厚 1 m )を一体的に積 層した。前記第 1金属層、 Au層はめつきにより形成した。各ケースの平面サイズは、 図 4に示すように、長さ A=4. lmm,全幅 B = 2. 6mmであり、凹部を囲う、長さ方向 側壁 14の幅 C = 0. 35mmである。  [0038] A ceramic case body is provided, and a W metallized layer (layer thickness of 30 m) is formed on the outer periphery of the recess opening, and Ni or a first Ni-Fe alloy of various compositions shown in Table 1 is formed. A case was prepared in which metal layers (layer thickness 15 μm) were integrally laminated in this order. In some cases, an Au layer (layer thickness 1 m) was additionally laminated on the first metal layer. The first metal layer and the Au layer were formed by plating. The planar size of each case is, as shown in FIG. 4, the length A = 4. 1 mm, the full width B = 2. 6 mm, and the width C of the longitudinal side wall 14 surrounding the recess C = 0. 35 mm.
[0039] 一方、 FeNiCo合金(商品名コバール)で形成された基材層を備え、その片面に表 面保護用の Ni層が接合形成され、他面に Niあるいは表 1に示す種々の組成の Ni— Fe合金で形成された第 2金属層及びその上に Sn—Ag合金カゝらなるろう材層とがこ の順序で接合形成された蓋体を準備した。蓋体の平面サイズはケースの平面サイズ とほぼ同等である。  On the other hand, a base layer formed of FeNiCo alloy (trade name: Kovar) is provided, a Ni layer for surface protection is bonded on one side of the base layer, Ni on the other side, or various compositions shown in Table 1. A lid was prepared in which a second metal layer formed of a Ni—Fe alloy and a brazing filler metal layer made of a Sn—Ag alloy on top of that were joined in this order. The flat size of the lid is almost the same as the flat size of the case.
[0040] 前記蓋体は、以下の要領で製作した蓋材力 所定の平面サイズに打ち抜き加工に より製作された。蓋材は、 FeNiCo合金板 (基材層用素材シート)の片面に Ni薄板を 、他面に第 2金属層の素材薄板を重ね合わせ、冷間でロール圧接 (圧下率 60%)し た後、得られた圧接材を 1000°Cで数分間保持する拡散焼鈍を行うことによって製作 された。前記拡散焼鈍により、前記圧接材を構成した Ni層、基材層、第 2金属層は互 いに拡散接合されると共に各層は軟化された。このようにして製作された 3層構造の クラッド材の第 2金属層の上に 10mass%Ag—残部 Sn (共晶点: 220°C)からなるろう 材を重ね合わせて冷間でロール圧接 (圧下率 60%)し、第 2金属層の上にろう材層を 積層した。このようにして製作された 4層構造の蓋材は、 80 /z mの基材層と、その片 面に積層された 5 m程度の Ni層と、前記基材層の他面に積層された 30 m程度 の第 2金属層及び 30 m程度のろう材層カもなるものであった。 The lid was manufactured by punching into a predetermined flat size of a lid material force manufactured in the following manner. The lid material is a thin Ni plate on one side of FeNiCo alloy sheet (material sheet for base layer). After laminating the material thin plate of the second metal layer on the other surface, cold-rolling (rolling reduction 60%) by pressure, and performing diffusion annealing to hold the obtained pressure-bonded material at 1000 ° C for several minutes It was made. By the diffusion annealing, the Ni layer, the base layer, and the second metal layer, which constitute the pressure contact material, were diffusion bonded together and each layer was softened. A brazing material consisting of 10 mass% Ag-balance Sn (eutectic point: 220 ° C) is superimposed on the second metal layer of the three-layer clad material manufactured in this way, and cold rolling contact ( The brazing material layer was laminated on the second metal layer. The lid material of the four-layer structure manufactured in this manner is composed of a base layer of 80 / z m, a Ni layer of about 5 m stacked on one side, and the other side of the base layer. The second metal layer of about 30 m and the brazing material layer of about 30 m were also formed.
[0041] 前記蓋体のろう材層が前記ケースの第 1金属層側あるいは Auめっき層側になるよ うに、蓋体をケースに重ね合わせてパッケージ組立体を得た。このパッケージ組立体 を蓋体が下になるように載置板に載せ、窒素ガス雰囲気中で蓋体をケースにろう付 けした。ろう付けは、 240°Cに加熱後、同温度で保持することなぐあるいは同温度で 表 1に示す時間保持後、冷却することにより実施した。以上のようにして製作した各パ ッケージの試料について、第 1金属層、第 2金属層の材質、 Au層の有無、ろう材層の 厚さ、 240°Cでの保持時間を表 1に併せて示す。  The lid was overlaid on the case such that the brazing material layer of the lid was on the first metal layer side or the Au plating layer side of the case, to obtain a package assembly. The package assembly was placed on the mounting plate with the lid facing downward, and the lid was brazed to the case in a nitrogen gas atmosphere. Brazing was carried out by heating to 240 ° C., holding at the same temperature or holding at the same temperature for the time shown in Table 1, and then cooling. The materials of the first metal layer, the second metal layer, the presence or absence of the Au layer, the thickness of the brazing material layer, and the holding time at 240 ° C. of the samples of each package manufactured as described above are shown in Table 1 Show.
[0042] 以上のようにして製作した各パッケージを用いて、長さ方向の中央部においてパッ ケージを幅方向に切断し、溶着層の縦断面(図 4中、 X— X位置での断面)を EPMA により観察した。その結果得られた組成像写真を用いて第 1,第 2金属間化合物層、 ろう材層の面積を画像解析ソフトにより測定し、これらの合計面積 (溶着層の全面積) に対する第 1及び第 2金属間化合物層(両者を合わせて「金属間化合物層」という。) の合計面積の比率を求めた。なお、画像解析ソフトは、商品名 Image-Pro (製造メー 力: MEDIA CYVERNETICS)を使用した。  Using each package manufactured as described above, the package is cut in the width direction at the central portion in the lengthwise direction, and the longitudinal cross section of the welding layer (cross section at position X-X in FIG. 4) Was observed by EPMA. The areas of the first and second intermetallic compound layers and the brazing material layer are measured by image analysis software using the composition image photograph obtained as a result, and the first and the first with respect to the total area of these (total area of the welding layer) The ratio of the total area of the two intermetallic compound layers (both are collectively referred to as "the intermetallic compound layer") was determined. The image analysis software used the product name Image-Pro (manufacturer: MEDIA CYVERNETICS).
[0043] また、各試料のパッケージを、 260°Cにて 30sec保持するリフロー(再加熱)を行い 、冷却後、気密試験に供して、気密性を調べた。気密試験は下記の要領にて実施さ れた。まず、リフロー後のパッケージを密閉容器へ入れ、 0. lkPaに減圧後、 Heガス 0. 5MPaにて 2hr程度加圧した。その後、密閉容器からパッケージを取り出し、 He ディテクタにてパッケージ力も排出される Heの測定を行った。測定結果が 1 X 10"9Pa •mVsec以下ではパッケージ中に Heガスの侵入は無いと考えられるので、この値 以下を合格とした。さらに、 Heガス検出試験で合格とされたパッケージをフロロカー ボンに浸漬し、連続気泡の発生の有無を調べた。連続気泡が生じないパッケージを 最終的に合格 (〇)、連続気泡が生じたものを不合格(X )と評価した。これらの測定 、観察結果を表 1に併せて示す。 Further, the package of each sample was subjected to reflow (reheating) to hold at 260 ° C. for 30 seconds, and after cooling, it was subjected to an airtight test to check airtightness. Airtightness tests were conducted as follows. First, the package after reflow was placed in a closed vessel, depressurized to 0.1 kPa, and then pressurized for 2 hours at 0.5 MPa of He gas. After that, the package was removed from the closed container, and the He force was also measured by the He detector. Measurement result is 1 x 10 " 9 Pa • It is considered that there is no penetration of He gas in the package if it is less than mVsec, so the value less than this value was accepted. In addition, the package that passed the He gas detection test was immersed in fluorocarbon to check for the generation of open cells. The package which did not generate | occur | produce an open cell finally passed (O), and the one which the open cell generate | occur | produced evaluated as disqualified (X). These measurements and observation results are also shown in Table 1.
[0044] 表 1より、第 1金属層、第 2金属層を Niで形成した試料 No. 1〜4のパッケージにつ いては、加熱保持時間を 100秒とした No. 1, 3では金属間化合物層の面積比が低く 、ろう材層が占める割合が高いため、リフロー後の気密性が劣化した。一方、 No. 2, 4では必要量の金属間化合物層が生成し、良好な気密性が得られたが、加熱保持 時間が 600秒であり、長時間の加熱保持を要した。  From Table 1, in the packages of sample Nos. 1 to 4 in which the first metal layer and the second metal layer were formed of Ni, the metallized samples No. 1 and 3 in which the heating and holding time was 100 seconds were used. Since the area ratio of the compound layer was low and the ratio occupied by the brazing material layer was high, the airtightness after reflow deteriorated. On the other hand, in Nos. 2 and 4, the required amount of intermetallic compound layer was formed, and good airtightness was obtained, but the heating retention time was 600 seconds, and heating retention was required for a long time.
[0045] これに対して、第 1金属層、第 2金属層を Ni— (5. 0〜20) mass%Fe合金で形成し た試料 No. 5〜16については、加熱温度で 100秒保持した No. 5, 6, 15, 16、並び に加熱後直ちに冷却した No. 7〜14のパッケージでも、金属間化合物層は十分な面 積比を有しており、このためリフロー後の気密性も良好であった。この場合、ケースに Au層を形成したものでは、金属間化合物の生成がより促進されていることも確かめら れた。  On the other hand, for samples No. 5 to 16 in which the first metal layer and the second metal layer were formed of Ni— (5.0 to 20) mass% Fe alloy, the heating temperature was maintained for 100 seconds. Even in the packages No. 5, 6, 15, 16 and the packages No. 7 to 14 which were cooled immediately after heating, the intermetallic compound layer had a sufficient area ratio, and therefore the airtightness after reflowing Was also good. In this case, it was also confirmed that the formation of the intermetallic compound was more promoted in the case where the Au layer was formed in the case.
[0046] [表 1] [Table 1]
Figure imgf000015_0001
Figure imgf000015_0001
(注) 試料 Ναに *を付したものは比較例、 その他は発明例  (Note) Samples with * attached to sample Να are comparative examples, others are invention examples

Claims

請求の範囲 The scope of the claims
[1] 電子部品を収納する凹部を有し、前記凹部が開口部を備えたケースと、溶着層と、 前記ケースの凹部を密閉するように前記ケースの凹部開口部の外周部に前記溶着 層を介してろう付けされた蓋体を備えた電子部品ノ^ケージであって、  [1] The welding layer has a recess for housing electronic components, and the recess has a case having an opening, a welding layer, and the outer periphery of the opening of the case opening so as to seal the recess of the case. An electronic component cage with a lid brazed through the
前記ケースは、前記凹部開口部の外周部に積層され、 Feを 5. 0〜20masS%を含 有する Ni— Fe合金によって形成された第 1金属層を有し、 The case has a first metal layer formed of a Ni—Fe alloy containing 5.0 to 20 mas S % of Fe laminated on the outer peripheral portion of the recess opening,
前記蓋体は基材層と、この基材層のケース側表面に積層され、前記 Ni— Fe合金 によって形成された第 2金属層を有し、  The lid has a base material layer, and a second metal layer laminated on the case side surface of the base material layer and formed of the Ni—Fe alloy.
前記溶着層は、純 Sn又は Snを主成分とする Sn基ろう合金力もなるろう材によって 形成されたろう材層と、このろう材層の両側に形成された第 1金属間化合物層および 第 2金属間化合物層を有し、前記第 1金属間化合物層および第 2金属間化合物層は ろう付けの際に前記第 1金属層及び第 2金属層の Ni原子及び Fe原子と前記ろう材 の Snとが拡散反応して形成された、電子部品ノ ッケージ。  The welding layer includes a brazing filler metal layer formed of pure Sn or a brazing filler metal that also has Sn base brazing alloy power based on Sn, and a first intermetallic compound layer and a second metal formed on both sides of the brazing filler material layer. The first intermetallic compound layer and the second intermetallic compound layer have an intermetallic compound layer, and during brazing, Ni atoms and Fe atoms of the first metal layer and the second metal layer, and Sn of the brazing material Is formed by diffusion reaction, electronic component package.
[2] 前記ろう材は、 Pbを含有しな 、請求項 1に記載した電子部品パッケージ。 [2] The electronic component package according to claim 1, wherein the brazing material does not contain Pb.
[3] 前記溶着層は、平均厚さが 10〜50 μ mである請求項 1又は 2に記載した電子部品 ノ ッケ^ ~"シ。 [3] The electronic component according to claim 1 or 2, wherein the welding layer has an average thickness of 10 to 50 μm.
[4] 前記溶着層の縦断面において、前記第 1金属間化合物層及び第 2金属間化合物層 の合計面積が前記溶着層の全面積に対して 25%以上、 98%以下である、請求項 1 力も 3のいずれか 1項に記載した電子部品パッケージ。  [4] In the longitudinal section of the welding layer, the total area of the first intermetallic compound layer and the second intermetallic compound layer is 25% or more and 98% or less with respect to the total area of the welding layer. The electronic component package described in any one of 1) and 3).
[5] 電子部品を収納する凹部を有し、前記凹部が開口部を備えたケース本体及び前記 凹部開口部の外周部に設けられ、 Feを 5. 0〜20mass%を含有する Ni— Fe合金に よって形成された第 1金属層を備えたケースと、基材層及び前記 Ni— Fe合金によつ て形成され、前記基材層の一方の表面に積層形成された第 2金属層を備えた蓋体と 、純 Sn又は Snを主成分とする Sn基ろう合金によって形成されたろう材を準備する準 備工程と、  [5] A Ni—Fe alloy having a recess for housing electronic components, wherein the recess is provided on the case main body having the opening and the outer periphery of the opening of the recess, and contains 5.0 to 20 mass% of Fe. And a second metal layer formed of the base layer and the Ni—Fe alloy and laminated on one surface of the base layer. And a preparation step of preparing a brazing filler metal formed of pure Sn or a Sn-based brazing alloy containing Sn as a main component.
前記第 1金属層と第 2金属層との間に前記ろう材を挟むように前記ケースと蓋体とを 重ね合わせたパッケージ組立体を組み立て、前記パッケージ組立体を加熱して前記 ケースと蓋体とを溶着層を介してろう付けするろう付け工程を有し、 前記溶着層はろう付けの際に前記第 1金属層及び第 2金属層の Ni原子及び Fe原 子と前記ろう材の Sn原子とが拡散反応して形成された第 1金属間化合物層および第 2金属間化合物層と、前記ろう材の未拡散反応部からなるろう材層とからなり、前記ろ ぅ材層の両側に前記第 1金属間化合物層および第 2金属間化合物層が形成された、 電子部品ノッケージの製造方法。 A package assembly in which the case and the lid are stacked is assembled so as to sandwich the brazing material between the first metal layer and the second metal layer, and the package assembly is heated to heat the case and the lid. And brazing through the welding layer, The welding layer is formed by diffusion reaction between Ni atoms and Fe atoms of the first metal layer and the second metal layer and Sn atoms of the brazing material during brazing. The first intermetallic compound layer and the second intermetallic compound layer are formed on both sides of the brazing material layer, which is composed of a bimetallic compound layer and a brazing material layer consisting of undiffused reaction parts of the brazing material. , How to manufacture electronic component knocks.
[6] 前記第 1金属層又は第 2金属層は、その表面に Auによって表面層が形成された請 求項 5に記載した製造方法。  [6] The method according to claim 5, wherein the first metal layer or the second metal layer has a surface layer formed of Au on the surface thereof.
[7] 前記ろう付け工程において、前記ろう材の融点より 10〜30°C高い温度に加熱してろ う付けする請求項 5又は 6に記載した製造方法。  [7] The manufacturing method according to [5] or [6], wherein the brazing is performed by heating to a temperature higher by 10 to 30 ° C. than the melting point of the brazing material in the brazing step.
[8] 前記ろう材は、前記蓋体の前記第 2金属層の上に積層されたろう材層からなる、請求 項 5から 7のいずれか 1項に記載した製造方法。  [8] The manufacturing method according to any one of claims 5 to 7, wherein the brazing material comprises a brazing material layer laminated on the second metal layer of the lid.
[9] 前記ろう材は、 Pbを含有しな 、請求項 5から 8の 、ずれか 1項に記載した製造方法。  [9] The method according to any one of claims 5 to 8, wherein the brazing material does not contain Pb.
[10] 前記溶着層は、その平均厚さが 10〜50 mである請求項 5から 9のいずれ力 1項に 記載した製造方法。  [10] The manufacturing method according to any one of claims 5 to 9, wherein the welding layer has an average thickness of 10 to 50 m.
[11] 基材層と、金属層と、ろう材層を備え、前記基材層、金属層及びろう材層が同順序で 接合された電子部品パッケージ用蓋材であって、  [11] A lid material for an electronic component package, comprising a base material layer, a metal layer, and a brazing material layer, wherein the base material layer, the metal layer and the brazing material layer are joined in the same order,
前記ろう材層が純 Sn又は Snを主成分とする Sn基ろう合金力もなるろう材によって 形成され、前記金属層が Feを 5. 0〜20mass%を含有する Ni— Fe合金によって形 成された、電子部品パッケージ用蓋材。  The brazing filler metal layer is formed of a pure Sn or a Sn-based brazing filler metal which also has Sn as a main component, and the metal layer is formed of a Ni-Fe alloy containing 5.0 to 20 mass% of Fe. , Lid for electronic component package.
[12] 前記ろう材は、 Pbを含有しな 、請求項 11に記載した電子部品パッケージ用蓋材。 [12] The lid for an electronic component package according to claim 11, wherein the brazing material does not contain Pb.
PCT/JP2006/311189 2005-06-08 2006-06-05 Electronic component package, method for manufacturing the same, and lid material for electronic component package WO2006132168A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013258281A (en) * 2012-06-12 2013-12-26 Shinko Electric Ind Co Ltd Electronic apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000106408A (en) * 1998-09-29 2000-04-11 Kyocera Corp Package for housing electronic component and metallic cover body used for the same
WO2002078085A1 (en) * 2001-03-27 2002-10-03 Sumitomo Special Metals C0., Ltd. Package for electronic part and method of manufacturing the package
JP2003209197A (en) * 2001-11-12 2003-07-25 Sumitomo Special Metals Co Ltd Package for electronic part, its lid, material for its lid, and method for manufacturing its led material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000106408A (en) * 1998-09-29 2000-04-11 Kyocera Corp Package for housing electronic component and metallic cover body used for the same
WO2002078085A1 (en) * 2001-03-27 2002-10-03 Sumitomo Special Metals C0., Ltd. Package for electronic part and method of manufacturing the package
JP2003209197A (en) * 2001-11-12 2003-07-25 Sumitomo Special Metals Co Ltd Package for electronic part, its lid, material for its lid, and method for manufacturing its led material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013258281A (en) * 2012-06-12 2013-12-26 Shinko Electric Ind Co Ltd Electronic apparatus

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