JP2007090404A - Joined body, semi-conductor apparatus, and joined body manufacturing method - Google Patents
Joined body, semi-conductor apparatus, and joined body manufacturing method Download PDFInfo
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Abstract
Description
本発明は、接合体、半導体装置及び接合体の製造方法に係り、特に電子機器の部品の接合に好適に用いられ、金属材料または金属がメタライズされた非金属材料を、実質的にＰｂ及びＡｕを含有しない接合材を用いて接合した接合体、半導体装置及び接合体の製造方法に関する。 The present invention relates to a bonded body, a semiconductor device, and a manufacturing method of the bonded body. In particular, the present invention is preferably used for bonding electronic parts, and a metal material or a metallized nonmetallic material is substantially made of Pb and Au. The present invention relates to a bonded body, a semiconductor device, and a manufacturing method of the bonded body, which are bonded using a bonding material that does not contain a metal.
従来、電子部品の実装技術においては、実用に極めて適していることから、Ｓｎ−Ｐｂ系共晶はんだが多用されてきた。しかし、Ｓｎ−Ｐｂ系共晶はんだに含まれるＰｂは、人体に対し有害であることから、Ｐｂを含まない、いわゆる非Ｐｂ系はんだの開発が急務とされている。 Conventionally, Sn-Pb eutectic solder has been widely used in electronic component mounting technology because it is extremely suitable for practical use. However, since Pb contained in the Sn—Pb eutectic solder is harmful to the human body, development of so-called non-Pb solder that does not contain Pb is urgently required.
現在半導体デバイスの中で例えばパワーデバイスのＰｂ系接合材としては、主に融点が約１８３℃以下の低温系はんだ（Ｓｎ−Ｐｂ共晶はんだ）と、融点が約３００℃程度の高温系はんだ（Ｐｂ−５Ｓｎはんだ）が多用されており、それぞれ使用目的に応じて使い分けられている。 Currently, for example, Pb-based bonding materials for power devices among semiconductor devices are mainly low-temperature solder (Sn—Pb eutectic solder) having a melting point of about 183 ° C. or lower and high-temperature solder having a melting point of about 300 ° C. ( Pb-5Sn solder) is widely used, and is used properly according to the purpose of use.
低温系はんだについては、Ｓｎ−Ａｇ−Ｃｕ系合金を中心としたものが実用化の段階に到達しており、今後数年で多くのセットメーカーで非Ｐｂ系共晶はんだの代替は完了することが予定されている。 As for low-temperature solders, those centered on Sn-Ag-Cu alloys have reached the stage of practical application, and replacement of non-Pb eutectic solders will be completed in many set manufacturers in the next few years. Is scheduled.
しかしながら、高温系はんだ、例えば２５０℃の高温条件下においても良好な機械的強度を保持する接合部を形成する接合材については、高Ｐｂ含有材料を除くとＡｕを主成分としたＡｕ基合金が挙げられるが、貴金属のＡｕを使用するので、材料価格が大幅に上昇するため汎用的に使用するには難しい材料である。 However, for a high-temperature solder, for example, a bonding material that forms a bonding portion that maintains good mechanical strength even under a high-temperature condition of 250 ° C., an Au-based alloy containing Au as a main component except for a high Pb-containing material is used. Although it is mentioned, since the noble metal Au is used, the material price is significantly increased, so that it is difficult to use for general purposes.
これまでに、Ｐｂ及びＡｕ以外の金属材料を主成分とし２５０℃の高温条件下においても良好な機械的強度を保持する接合部を形成する接合材のひとつとして、Ｚｎ−Ｓｎ二元系合金が候補として挙げられている（例えば、特許文献１、２及び３）。この接合材料は、ＺｎとＳｎ元素からなる金属材料であるため、安価であり、環境にも配慮された接合材である。しかしながら、Ｃｕとの接合性が悪いため、この金属材料を接合材料として用いるためにフラックスが使用されている。 So far, Zn-Sn binary alloys have been used as one of the bonding materials that form a bonded portion that has a metal material other than Pb and Au as a main component and maintains good mechanical strength even under high temperature conditions of 250 ° C. It is listed as a candidate (for example, Patent Documents 1, 2, and 3). Since this bonding material is a metal material composed of Zn and Sn elements, the bonding material is inexpensive and environmentally friendly. However, since the bondability with Cu is poor, flux is used to use this metal material as a bonding material.
しかしながら、近年フロンの使用規制にともない、はんだ付け後のフラックスの洗浄が困難となってきており、フラックス残渣が耐湿性や絶縁性の低下を招く恐れが懸念されている。特に、高温はんだが使用される部品内部接合においては、フラックスの使用が制限される場合が多い。従って、Ｐｂ及びＡｕ以外の金属材料を主成分とした金属合金も、高温系はんだとしては未だ実用化には至っていない。
本発明は、実質的にＰｂおよびＡｕを含有しない接合材を用い、高温条件下においてもなお良好な機械的強度を保持可能で、接合部が短時間で形成可能な接合体、半導体装置及び接合体の製造方法を提供することを目的とする。 The present invention uses a bonding material that substantially does not contain Pb and Au, can maintain a good mechanical strength even under high temperature conditions, and can form a bonded portion in a short time. It aims at providing the manufacturing method of a body.
本発明は、Ｃｕ、Ａｇ、Ａｕ、Ｐｔ、Ｐｄ及びＮｉから選ばれる金属又はこれらの少なくとも１種を主体とする合金からなる第１の基材と、少なくとも接合面が金属からなる第２の基材と、Ｚｎ−Ｓｎ系合金からなる接合材の層、該接合材と前記第１の基材との界面反応により形成されたＳｎ相を含むＺｎ、及び前記第１の基材の構成元素との金属間化合物の層とを有する、前記第１の基材と前記第２の基材とを接合する接合層とからなることを特徴とする接合体である。前記接合体において、前記第１の基材がＣｕ、Ａｇ若しくはＡｕ又はこれらの少なくとも１種を主体とする合金からなることが望ましく、Ｃｕ又はＣｕ基合金からなることがより望ましい。 The present invention includes a first base material made of a metal selected from Cu, Ag, Au, Pt, Pd and Ni or an alloy mainly composed of at least one of these, and a second base made of at least a bonding surface made of metal. And a layer of a bonding material made of a Zn—Sn-based alloy, Zn containing an Sn phase formed by an interface reaction between the bonding material and the first base material, and a constituent element of the first base material, And a bonding layer for bonding the first base material and the second base material, each having a layer of an intermetallic compound. In the joined body, the first base material is preferably made of Cu, Ag, Au, or an alloy mainly composed of at least one of these, and more preferably made of Cu or a Cu-based alloy.
また、本発明は、Ｃｕ、Ａｇ、Ａｕ、Ｐｔ、Ｐｄ及びＮｉから選ばれる金属又はこれらの少なくとも１種を主体とする合金からなる金属リードフレームと、前記金属リードフレームに実装された接合面がメタライズされた半導体素子と、前記金属リードフレームと前記半導体素子のメタライズされた面を接合する、Ｚｎ−Ｓｎ系合金からなる第１の層と前記金属リードフレームとの界面反応により形成されたＳｎ相を含むＺｎと前記金属リードフレームの構成元素との金属間化合物からなる第２の層とを有する接合層と、前記半導体素子を封止する封止樹脂とを有することを特徴とする半導体装置である。前記半導体装置において、前記金属リードフレームがＣｕ又はＣｕ基合金からなることが望ましい。 The present invention also provides a metal lead frame made of a metal selected from Cu, Ag, Au, Pt, Pd, and Ni or an alloy mainly composed of at least one of them, and a joint surface mounted on the metal lead frame. An Sn phase formed by an interfacial reaction between a metallized semiconductor element, a first layer made of a Zn-Sn alloy, and the metal lead frame joining the metallized surface of the metal lead frame and the semiconductor element A bonding layer having a second layer made of an intermetallic compound of Zn containing Zn and a constituent element of the metal lead frame, and a sealing resin for sealing the semiconductor element. is there. In the semiconductor device, the metal lead frame is preferably made of Cu or a Cu-based alloy.
さらにまた、本発明は、Ｃｕ、Ａｇ、Ａｕ、Ｐｔ、Ｐｄ及びＮｉから選ばれる金属又はこれらの少なくとも１種を主体とする合金からなり、接合面にＳｎ又はＳｎ基合金からなる金属層を形成させた第１の基材と、少なくとも接合面が金属からなる第２の基材とを、Ｚｎ−Ｓｎ系合金からなる接合材を介して積層体とする積層工程と、前記積層体を、非酸化雰囲気中で、３００℃以上、４５０℃以下の温度で加熱して、前記第１の基材と前記接合材との接合界面に、Ｓｎ相を含むＺｎと前記第１の基材の構成元素との金属間化合物の層を形成させつつ一体に接合する工程とからなることを特徴とする接合体の製造方法である。前記接合体の製造方法において、前記Ｚｎ−Ｓｎ系合金からなる接合材が、質量構成比でＺｎを５０質量％以上、９５質量％以下含み、残部が実質的にＳｎからなることが望ましい。前記接合体の製造方法において、前記Ｓｎ又はＳｎ基合金からなる金属層が、少なくとも前記接合材との接触下で、２５０℃以下の温度で溶融可能であることが望ましい。前記接合体の製造方法において、前記第１の基材がＣｕ又はＣｕ基合金からなることが望ましい。
なお、本発明におけるＺｎ−Ｓｎ系合金とは、ＺｎおよびＳｎのみからなる合金だけでなく、Ａｇ１０％以下、Ｃｕ５％以下、Ａｕ１０％以下程度を添加元素として含んだものであっても構わない。
Furthermore, the present invention is made of a metal selected from Cu, Ag, Au, Pt, Pd, and Ni or an alloy mainly composed of at least one of them, and a metal layer made of Sn or a Sn-based alloy is formed on the joint surface. A laminating step in which the first base material and the second base material having at least a joining surface made of metal are laminated via a joining material made of a Zn-Sn alloy, In an oxidizing atmosphere, heating is performed at a temperature of 300 ° C. or higher and 450 ° C. or lower, and Zn containing Sn phase at the bonding interface between the first base material and the bonding material and the constituent elements of the first base material And a step of joining together while forming an intermetallic compound layer. In the method for manufacturing the joined body, it is desirable that the joining material made of the Zn—Sn alloy contains 50% by mass or more and 95% by mass or less of Zn by mass composition ratio, and the balance is substantially made of Sn. In the method for manufacturing the joined body, it is desirable that the metal layer made of Sn or an Sn-based alloy can be melted at a temperature of 250 ° C. or lower at least in contact with the joining material. In the method for manufacturing the joined body, it is preferable that the first base material is made of Cu or a Cu-based alloy.
Note that the Zn—Sn alloy in the present invention is not limited to an alloy composed only of Zn and Sn, but may include an additive element of about 10% Ag or less, 5% Cu or less, and 10% Au or less.
本発明の接合体によれば、Ｚｎと基材の構成元素との金属間化合物が形成されるので、十分な接合強度を有し、かつ高温条件下においても機械的強度が維持可能である。 According to the joined body of the present invention, an intermetallic compound of Zn and a constituent element of the base material is formed, so that it has a sufficient joining strength and can maintain the mechanical strength even under high temperature conditions.
また、本発明の半導体装置によれば、Ｚｎと基材の構成元素との金属間化合物が形成されるので、高温条件下においても半導体素子とリードフレーム間の接合強度は維持可能である。 Further, according to the semiconductor device of the present invention, an intermetallic compound of Zn and the constituent element of the base material is formed, so that the bonding strength between the semiconductor element and the lead frame can be maintained even under high temperature conditions.
本発明の接合方法によれば、Ｚｎ−Ｓｎ系合金からなる接合材に対しフラックスを使用しなくても良好な接合状態を確保することが可能であり、耐熱性が高い接合部が形成される。 According to the bonding method of the present invention, it is possible to ensure a good bonding state without using a flux with respect to a bonding material made of a Zn—Sn alloy, and a bonded portion having high heat resistance is formed. .
図１は、第１の基材１と第２の基材２とが、第１の基材１の表面上に、Ｓｎ相３を含んでなるＺｎと第１の基材の構成元素との金属間化合物の層４と、Ｚｎ−Ｓｎ系合金からなる接合材の層５を介して接合された本発明の一実施形態に係る接合体６を拡大して示す断面図である。 FIG. 1 shows that the first base material 1 and the second base material 2 are composed of Zn containing Sn phase 3 on the surface of the first base material 1 and the constituent elements of the first base material. It is sectional drawing which expands and shows the joined body 6 which concerns on one Embodiment of this invention joined through the layer 4 of the intermetallic compound, and the layer 5 of the joining material which consists of Zn-Sn type alloys.
第１の基材１は金属材料が使用される。第１の基材として使用する金属材料は用途に応じて選択可能であるが、第１の基材１は、高温条件下において溶融した接合材に溶解−拡散した場合、形成される合金の固相線温度が著しく低下しない材料であることが望ましい。第１の基材１の主たる金属材料の構成元素はＺｎと金属間化合物を形成する。このような金属材料は、具体的には、Ｃｕ、Ａｇ、Ａｕ、Ｐｔ、Ｐｄ若しくはＮｉから選ばれた金属又はこれらの少なくとも１種を主体とする合金である。これらの金属を用いた場合には、耐熱性に優れた接合部を形成することができる。これらの金属材料のうち、Ｃｕ、Ａｇ若しくはＡｕから選ばれた金属又はこれらの少なくとも１種を主体とする合金がより耐熱性を有するため好ましく、Ｃｕ又はＣｕ基合金からなることが良好な導電性を有するためより好ましい。なお、これらの金属以外でもＡｌ、Ｇｅ、Ｂｅ、Ｎｂ、Ｍｎなどが、合金成分として使われてもよい。 A metal material is used for the first substrate 1. The metal material used as the first base material can be selected depending on the application. However, the first base material 1 is a solid solution of the alloy formed when it is dissolved and diffused into the molten bonding material under high temperature conditions. It is desirable that the material does not significantly decrease the phase line temperature. The constituent element of the main metal material of the first substrate 1 forms an intermetallic compound with Zn. Specifically, such a metal material is a metal selected from Cu, Ag, Au, Pt, Pd, or Ni, or an alloy mainly composed of at least one of them. When these metals are used, a joint having excellent heat resistance can be formed. Among these metal materials, a metal selected from Cu, Ag, or Au or an alloy mainly composed of at least one of them is preferable because it has higher heat resistance, and is preferably made of Cu or a Cu-based alloy. This is more preferable. In addition to these metals, Al, Ge, Be, Nb, Mn, etc. may be used as alloy components.
第２の基材２は金属材料が使用される。この金属材料は用途に応じて選択可能であるが、特に限定されることはない。第２の基材２は、高温条件下において溶融した接合材に溶解−拡散した場合、接合材中に固溶して形成される合金の固相線温度が著しく低下しない材料であることが望ましい。これらの金属としては、例えば、Ｃｕ、Ａｇ、Ａｕ、Ｐｔ、Ｐｄ、Ｎｉ、若しくはＡｌから選ばれた金属又はこれらの少なくとも１種を主体とする合金などがある。これらの金属を用いた場合には、耐熱性に優れた接合部を形成することができる。これらの金属材料のうち、Ｃｕ、Ａｇ若しくはＡｕから選ばれた金属又はこれらの少なくとも１種を主体とする合金がより優れたＳｎとの接合性を有するため好ましく、Ｃｕ又はＣｕ基合金からなることが安価な金属材料を用い製造コストを抑えることができるためより好ましい。なお、これらの金属以外でもＧｅ、Ｂｅ、Ｎｂ、Ｍｎなどが、合金成分として使われてもよい。第２の基材２の金属材料は、上記の第１の基材１の金属材料と同じであってもよい。この場合、第２の基材２として使用される主たる金属材料の構成元素はＺｎと金属間化合物を形成する。 A metal material is used for the second substrate 2. Although this metal material can be selected according to a use, it is not specifically limited. The second base material 2 is desirably a material that does not significantly lower the solidus temperature of an alloy formed by solid solution in the bonding material when dissolved and diffused in the molten bonding material under high temperature conditions. . Examples of these metals include a metal selected from Cu, Ag, Au, Pt, Pd, Ni, or Al, or an alloy mainly composed of at least one of them. When these metals are used, a joint having excellent heat resistance can be formed. Among these metal materials, a metal selected from Cu, Ag, or Au or an alloy mainly composed of at least one of them is preferable because it has better bonding properties with Sn, and is made of Cu or a Cu-based alloy. However, it is more preferable because an inexpensive metal material can be used and manufacturing cost can be suppressed. In addition to these metals, Ge, Be, Nb, Mn, etc. may be used as alloy components. The metal material of the second substrate 2 may be the same as the metal material of the first substrate 1 described above. In this case, the constituent element of the main metal material used as the second substrate 2 forms an intermetallic compound with Zn.
また、第２の基材２は、図１に示されるように、接合層５により直接接合されていてもよいし、Ｚｎと第２の基材２の構成元素との金属間化合物の層を介して接合層５により接合されていてもよい。 Moreover, the 2nd base material 2 may be directly joined by the joining layer 5, as FIG. 1 shows, and the layer of the intermetallic compound of Zn and the structural element of the 2nd base material 2 is carried out. It may be bonded by the bonding layer 5.
Ｓｎ相３は、Ｚｎと第１の基材１の構成元素との金属間化合物の層４中に分散されて存在する。Ｓｎ相は、５〜６μｍ程度のＳｎの粒子から構成される。金属間化合物の層４中に可撓性を有するＳｎ相３が存在することにより、接合体６のクラックの発生が抑制される傾向になる。 The Sn phase 3 is dispersed and present in the intermetallic compound layer 4 of Zn and the constituent elements of the first substrate 1. The Sn phase is composed of Sn particles of about 5 to 6 μm. The presence of the flexible Sn phase 3 in the intermetallic compound layer 4 tends to suppress the occurrence of cracks in the joined body 6.
Ｚｎと第１の基材１との構成元素との金属間化合物の層４は、接合条件、例えば加熱温度、加熱時間、又は加熱前に予め形成する第１の基材１上に形成するＳｎ又はＳｎ基合金の金属層の厚さ等によるが、通常１０μｍ以上の厚さを有する。 The intermetallic compound layer 4 of Zn and the constituent element of the first base material 1 is formed on the first base material 1 formed in advance before joining conditions, for example, heating temperature, heating time, or heating. Or, depending on the thickness of the metal layer of the Sn-based alloy, etc., the thickness is usually 10 μm or more.
Ｚｎ−Ｓｎ系合金からなる接合材の層５は、実質的にＺｎとＳｎとからなる。その組成比率は、加熱溶融される前のＺｎ−Ｓｎ系合金からなる接合材の質量構成比（Ｚｎが５０％以上９５％以下であり、残部が実質的にＳｎである）、とほぼ同じである。この接合材の層５は、ＳｎＺｎ共晶、Ｚｎ初晶相等を有していてもよい。
また、この接合材の層５中には、第１の基材１の構成金属元素及び／又は第２の基材２の構成金属元素が溶解・拡散することにより形成したＺｎ又はＳｎとの金属間化合物が存在していても良い。
The bonding material layer 5 made of a Zn—Sn alloy is substantially made of Zn and Sn. The composition ratio is substantially the same as the mass composition ratio (Zn is 50% or more and 95% or less and the balance is substantially Sn) of the bonding material made of the Zn—Sn alloy before being heated and melted. is there. The bonding material layer 5 may have a SnZn eutectic, a Zn primary crystal phase, or the like.
Further, in the bonding material layer 5, a metal with Zn or Sn formed by dissolving / diffusing the constituent metal element of the first base material 1 and / or the constituent metal element of the second base material 2. An intercalation compound may be present.
上記の接合体の製造は以下に詳細を示すような接合体の製造方法により行うことができる。 The above-mentioned joined body can be manufactured by a method for manufacturing a joined body as will be described in detail below.
図２は、本発明の他の実施形態に係る接合体の製造方法を示す断面図である。図２（ａ）に示すように、まず、第１の基材１と、第１の基材１の表面上に形成するＳｎ又はＳｎ基合金からなる金属層７と、第２の基材２と、第２の基材２の表面上に形成するＳｎ又はＳｎ基合金からなる金属層８とを、それぞれの金属層７，８の間にＺｎ−Ｓｎ系合金からなる接合材９とを介在させて積層し、積層体１０を形成する。このとき加圧を行ってもよい。 FIG. 2 is a cross-sectional view illustrating a method for manufacturing a joined body according to another embodiment of the present invention. As shown in FIG. 2 (a), first, the first substrate 1, the metal layer 7 made of Sn or Sn-based alloy formed on the surface of the first substrate 1, and the second substrate 2 And a metal layer 8 made of Sn or a Sn-based alloy formed on the surface of the second substrate 2 and a bonding material 9 made of a Zn—Sn-based alloy interposed between the metal layers 7, 8. Then, the stacked body 10 is formed. At this time, pressurization may be performed.
次に、この積層体１０を３００℃以上４５０℃以下で加熱することによって、図２（ｂ）に示すように第１の基材１及び第２の基材２が、第１の基材１の接合界面に、Ｓｎ相１１を含むＺｎと第１の基材１の構成元素との金属間化合物の層１２、第２の基材２の接合界面に、Ｓｎ相１３を含むＺｎと第２の基材２の構成元素との金属間化合物の層１４、及びこれらの金属層の間の接合層１５を介して接合された接合体１６が製造される。 Next, by heating the laminate 10 at a temperature of 300 ° C. or higher and 450 ° C. or lower, the first base material 1 and the second base material 2 become the first base material 1 as shown in FIG. Zn containing Sn phase 11 and the intermetallic compound layer 12 of the constituent elements of the first base material 1 at the bonding interface, and Zn containing Sn phase 13 at the bonding interface of the second base material 2 and the second The joined body 16 joined through the layer 14 of the intermetallic compound with the constituent element of the substrate 2 and the joining layer 15 between these metal layers is manufactured.
なお、第１の基材１又は第２の基材２の一方の表面にＳｎ又はＳｎ基合金からなる金属層を形成させずに、第１の基材１と第２の基材２とを接合させて接合体を製造することも可能である。また、場合によりＳｎ又はＳｎ基合金からなる金属層を形成させた第１の基材又は第２の基材のいずれか一方の上に、Ｚｎ−Ｓｎ系合金からなる接合材９を例えば蒸着法により予め形成させた後、これらを接合することにより第１の基材と第２の基材とを接合する方法も本発明の範疇に含まれる。 In addition, without forming the metal layer which consists of Sn or a Sn group alloy on the one surface of the 1st base material 1 or the 2nd base material 2, the 1st base material 1 and the 2nd base material 2 are used. It is also possible to manufacture a joined body by bonding. In addition, a bonding material 9 made of a Zn—Sn-based alloy is deposited on, for example, a vapor deposition method on either the first base material or the second base material on which a metal layer made of Sn or an Sn-based alloy is optionally formed. A method of joining the first base material and the second base material by joining them together after being formed in advance is also included in the scope of the present invention.
第１の基材１及び第２の基材２は、上記の接合体における第１の基材１及び第２の基材２と実質的に同じである。Ｓｎ又はＳｎ基合金からなる金属層７，８をそれぞれ第１の基材１及び第２の基材２にメタライズする手段としては、蒸着、めっき処理や電子ビーム処理等が挙げられる。 The first base material 1 and the second base material 2 are substantially the same as the first base material 1 and the second base material 2 in the joined body. Examples of means for metallizing the metal layers 7 and 8 made of Sn or Sn-based alloy to the first base material 1 and the second base material 2 include vapor deposition, plating treatment, electron beam treatment, and the like.
図３は、本発明のさらに他の実施形態に係る接合体の製造方法を示す断面図である。この実施形態では、第２の基材２が、金属、セラミックス、半導体等からなる母材１７の表面に形成されたメタライズ層２となっている。メタライズ層２を構成する金属材料は用途に応じて選択可能である。前記メタライズ層２は、Ｃｕ、Ａｇ、Ａｕ、Ｐｔ、Ｐｄ若しくはＮｉから選ばれる金属又はこれらの少なくとも１種を主体とする合金からなる材料であることが好ましい。さらに、メタライズ層２の表面には、Ｓｎ又はＳｎ基合金からなる金属層８を形成し、また、第１の基材１の表面にも、Ｓｎ又はＳｎ基合金からなる金属層７を形成し、各金属層の間にはＺｎ−Ｓｎ系合金からなる接合材９を配置し積層体１８を構成し、その後、この積層体１８を加熱することによって、接合体を製造することができる。 FIG. 3 is a cross-sectional view illustrating a method for manufacturing a joined body according to still another embodiment of the present invention. In this embodiment, the second substrate 2 is a metallized layer 2 formed on the surface of a base material 17 made of metal, ceramics, semiconductor, or the like. The metal material which comprises the metallization layer 2 can be selected according to a use. The metallized layer 2 is preferably a material made of a metal selected from Cu, Ag, Au, Pt, Pd or Ni, or an alloy mainly composed of at least one of them. Further, a metal layer 8 made of Sn or Sn-based alloy is formed on the surface of the metallized layer 2, and a metal layer 7 made of Sn or Sn-based alloy is also formed on the surface of the first base 1. The bonding material 9 made of a Zn—Sn-based alloy is disposed between the metal layers to form the laminated body 18, and then the laminated body 18 is heated to manufacture the bonded body.
一方、第１の基材１が、金属、セラミックス、半導体等からなる母材の表面上にメタライズ層が形成されることによって、接合体を製造してもよい。
さらに、第１の基材１及び第２の基材２が共に、金属、セラミックス、半導体等からなる母材の表面上にメタライズ層が形成されることによって、接合体を製造してもよい。なお、メタライズ層となる第１の基材１及び／又は第２の基材２と母材の間には、さらにいくつかのメタライズ層が存在していても本発明の範疇に含まれる。
第１の基材１又は第２の基材のいずれか一方の表面上にＳｎ又はＳｎ基合金からなる金属層を形成する場合には、他方の表面上にＳｎ又はＳｎ基合金からなる金属層を形成しないで、積層体を構成し、その後、積層体を加熱することによって、接合体を製造することも可能である。
On the other hand, the first base material 1 may be manufactured by forming a metallized layer on the surface of a base material made of metal, ceramics, semiconductor, or the like.
Furthermore, the first base material 1 and the second base material 2 may be manufactured by forming a metallized layer on the surface of a base material made of metal, ceramics, semiconductor, or the like. In addition, even if some metallization layers exist between the 1st base material 1 and / or 2nd base material 2 used as a metallization layer, and a base material, it is contained in the category of this invention.
When a metal layer made of Sn or a Sn-based alloy is formed on the surface of either the first base material 1 or the second base material, a metal layer made of a Sn or Sn-based alloy on the other surface It is also possible to manufacture a joined body by forming a laminated body without forming the film, and then heating the laminated body.
前記金属層７，８を第１の基材１及び／又は第２の基材２にメタライズする手段としては、蒸着、めっき処理や電子ビーム処理等が挙げられる。 Examples of means for metallizing the metal layers 7 and 8 on the first base material 1 and / or the second base material 2 include vapor deposition, plating treatment, and electron beam treatment.
以下、本発明の実施形態に係る接合体の製造方法で用いられる部材について説明する。第１の基材１及び第２の基材２は、上記の接合体において説明した第１の基材１及び第２の基材２と実質的に同じである。第１の基材１及び第２の基材２の厚さ（平均厚さ）は特に限定されるものではないが、図３に示されるように他の母材表面にメタライズされた場合には、０．１μｍ以上、５００μｍ以下の範囲であることが好ましい。 Hereinafter, the member used with the manufacturing method of the conjugate | zygote which concerns on embodiment of this invention is demonstrated. The first substrate 1 and the second substrate 2 are substantially the same as the first substrate 1 and the second substrate 2 described in the above joined body. The thickness (average thickness) of the first base material 1 and the second base material 2 is not particularly limited, but when it is metallized on the surface of another base material as shown in FIG. , Preferably in the range of 0.1 μm or more and 500 μm or less.
Ｓｎ又はＳｎ基合金からなる金属層は、主としてＳｎからなる金属層であるが、例えば融点を下げる、等のため、Ａｇ、Ｃｕ等の他の成分を加えることが可能である。この金属層は、少なくとも接合材との接触下で、２５０℃以下の温度で溶融することが、Ｚｎと第１の基材の構成元素とからなる金属間化合物、及び場合によりＺｎと第２の基材の構成元素とからなる金属間化合物が形成しやすくなるため好ましい。 The metal layer made of Sn or an Sn-based alloy is a metal layer mainly made of Sn, but other components such as Ag and Cu can be added to lower the melting point, for example. The metal layer melts at a temperature of 250 ° C. or less at least in contact with the bonding material, and is an intermetallic compound composed of Zn and the constituent elements of the first base material, and in some cases, Zn and the second layer. It is preferable because an intermetallic compound composed of the constituent elements of the base material is easily formed.
また、Ｓｎ又はＳｎ基合金からなる金属層は、３μｍ以上、３０μｍ以下の範囲であることが望ましい。金属層が３μｍより薄い場合には、Ｚｎ−Ｓｎ系合金からなる接合材の良好な接合性を確保することが困難となり、また３０μｍ以上の場合には、接合後にＺｎ−Ｓｎ系合金からなる接合材と金属層が混合した際に、Ｚｎ−Ｓｎ系合金からなる接合材のＳｎ量が必要以上に上昇し、接合部の耐熱性低下が起こる恐れがあるためである。 In addition, the metal layer made of Sn or an Sn-based alloy is desirably in the range of 3 μm or more and 30 μm or less. If the metal layer is thinner than 3 μm, it is difficult to ensure good bonding properties of the bonding material made of Zn—Sn alloy, and if it is 30 μm or more, bonding made of Zn—Sn alloy after bonding is difficult. This is because when the material and the metal layer are mixed, the Sn amount of the bonding material made of the Zn—Sn alloy increases more than necessary, and the heat resistance of the bonded portion may be lowered.
前記金属層７，８を第１の基材１及び／又は第２の基材２にメタライズする手段としては、蒸着、めっき処理や電子ビーム処理等が挙げられる。 Examples of means for metallizing the metal layers 7 and 8 on the first base material 1 and / or the second base material 2 include vapor deposition, plating treatment, and electron beam treatment.
Ｚｎ−Ｓｎ系合金からなる接合材９は、質量構成比で、Ｚｎを５０％以上、９５％以下含み、残部は実質的にＳｎからなる。Ｚｎを７０％以上、９０％以下含み、残部が実質的にＳｎからなる金属材料であることが経済性、作業性の面から望ましい。Ｚｎ−Ｓｎ系合金からなる接合材は、第３の成分として、例えば、耐熱性を向上させるためにＡｇ、Ｃｕを、また脱酸のためにＢｉを、その他Ａｌ、Ｃｏ、Ｎｉ、Ｓｂ等が加えられていてもよい。これらの第３成分の配合量は、Ｚｎ−Ｓｎ系合金からなる接合材の合計の１００重量％に基づいて、５重量％以下である。 The bonding material 9 made of a Zn—Sn-based alloy contains 50% or more and 95% or less of Zn by mass composition ratio, and the balance is substantially made of Sn. It is desirable from the viewpoints of economy and workability that the metal material contains 70% or more and 90% or less of Zn and the balance is substantially made of Sn. A bonding material made of a Zn—Sn alloy includes, for example, Ag and Cu for improving heat resistance, Bi for deoxidation, Al, Co, Ni, Sb, and the like as a third component. It may be added. The blending amount of these third components is 5% by weight or less based on 100% by weight of the total of the bonding material made of the Zn—Sn alloy.
また、Ｚｎ−Ｓｎ系合金からなる接合材は、良好な接合強度を確保するために厚さ１μｍ以上、５００μｍ以下、より好ましくは１０μｍ以上、５０μｍ以下とすることが望ましい。Ｚｎ−Ｓｎ系合金からなる接合材の厚さが厚すぎると、接合時間において熱が接合材全体に均等に伝わらず溶融しない箇所が現れ、ぬれ性の低下を招く恐れがあり、薄すぎると、接合後の接合強度が確保できない恐れがある。 In addition, the bonding material made of a Zn—Sn alloy is desirably 1 μm or more and 500 μm or less, more preferably 10 μm or more and 50 μm or less in order to ensure good bonding strength. If the thickness of the bonding material made of a Zn-Sn alloy is too thick, there will be a portion where heat does not transmit evenly throughout the bonding material and does not melt in the bonding time, which may lead to a decrease in wettability. There is a possibility that the bonding strength after bonding cannot be secured.
Ｚｎ−Ｓｎ系合金からなる接合材の供給手段としては、めっき処理、シートはんだ、ワイヤーはんだ、又はスーパージャフィット法やスーパーソルダー法などによるはんだプリコート等が挙げられる。 Examples of means for supplying a bonding material made of a Zn—Sn alloy include plating, sheet solder, wire solder, or solder pre-coating by a super-jafit method or a super solder method.
シートはんだ材を使用する場合は、シート厚を極端に大きくした場合も同様に、数秒の接合時間において、熱が接合材全体に均等に伝わらず溶融しない箇所が現れ、ぬれ性の低下を招く恐れが考えられる。そのため、短時間で接合を行なうためには、可能な限りシート厚を小さくするため３０〜５０μｍの範囲内にすることが望ましい。 When using sheet solder material, even when the sheet thickness is extremely increased, in the same way, within several seconds of bonding time, heat may not be transmitted evenly throughout the bonding material, resulting in the appearance of non-melting parts, which may lead to a decrease in wettability. Can be considered. Therefore, in order to perform bonding in a short time, it is desirable that the sheet thickness is within a range of 30 to 50 μm in order to reduce the sheet thickness as much as possible.
さらに本発明の実施形態に係る接合体の製造方法について更に説明する。積層体を加熱する際の加熱温度は３００℃以上、４５０℃以下の範囲内である。この範囲であると、高温系マウント材として求められる保証温度である２６０℃の高温環境下においても固相保持可能なＺｎ−Ｓｎ系接合材が溶融し、基材との接合が可能となる。加熱温度は好ましくは３５０℃以上である。 Furthermore, the manufacturing method of the conjugate | zygote based on embodiment of this invention is further demonstrated. The heating temperature for heating the laminate is in the range of 300 ° C. or higher and 450 ° C. or lower. Within this range, the Zn—Sn bonding material that can be solid-phase retained melts even in a high-temperature environment of 260 ° C., which is a guaranteed temperature required for a high-temperature mounting material, and can be bonded to the substrate. The heating temperature is preferably 350 ° C. or higher.
加熱時間は０．１秒以上が望ましく、特にピーク温度での加熱時間が０．５秒以上となるように加熱すればより好ましい。また、加熱時間は長くとも３０秒以下で十分であり、ピーク温度での加熱時間が１０秒以下となるように加熱すれば十分である。 The heating time is desirably 0.1 seconds or more, and it is more preferable to perform heating so that the heating time at the peak temperature is 0.5 seconds or more. Further, at most 30 seconds or less is sufficient for the heating time, and it is sufficient if heating is performed so that the heating time at the peak temperature is 10 seconds or less.
また、本発明の実施形態に係る接合体の製造方法は、非酸化雰囲気下、例えばフォーミングガス雰囲気下で加熱が行われる。具体的には、酸素濃度を１００ｐｐｍ以下にしたフォーミングガス（窒素＋水素）雰囲気下で加熱が行われる。 In the method for manufacturing a joined body according to the embodiment of the present invention, heating is performed in a non-oxidizing atmosphere, for example, a forming gas atmosphere. Specifically, heating is performed in a forming gas (nitrogen + hydrogen) atmosphere with an oxygen concentration of 100 ppm or less.
なお、本発明によれば接合時間が極度に増加することがないため、接合体の製造効率の低下を招かない。すなわち、従来のＰｂ含有の高温系はんだと同等の接合時間で良好な接合を達成できる。例えば、実際の半導体装置の実装工程においてＰｂ含有はんだを用いた現行の製造速度と同程度の製造速度に設定することを可能とし、製造効率を低減させない。 In addition, according to this invention, since joining time does not increase extremely, it does not cause the fall of the manufacturing efficiency of a joined body. That is, good joining can be achieved in a joining time equivalent to that of a conventional high-temperature solder containing Pb. For example, in an actual semiconductor device mounting process, it is possible to set a manufacturing speed comparable to the current manufacturing speed using Pb-containing solder, and the manufacturing efficiency is not reduced.
本発明の接合体の製造方法によれば、２６０℃以上の耐熱性を有する接合層が形成されるため、高温系マウント材として求められる２６０℃保証として、２６０℃の高温条件下においても接合層の耐熱性を維持することができる。また、接合材内部において、第１の基材及び／又は第２の基材の構成元素が、Ｚｎ−Ｓｎ系合金からなる接合材に固溶した相、または、Ｚｎ−Ｓｎ系合金からなる接合材中のＺｎもしくはＳｎと各基材構成元素とで構成される金属間化合物相等が生成してもよい。結果として、高温条件下においても機械的強度の良好な接合体が短時間で得ることができる。 According to the method for manufacturing a joined body of the present invention, a joining layer having a heat resistance of 260 ° C. or higher is formed. The heat resistance of can be maintained. Further, in the bonding material, a phase in which the constituent elements of the first base material and / or the second base material are dissolved in the bonding material made of the Zn—Sn alloy, or the bonding made of the Zn—Sn alloy. An intermetallic compound phase or the like composed of Zn or Sn in the material and each base material constituent element may be generated. As a result, a bonded body having good mechanical strength can be obtained in a short time even under high temperature conditions.
本発明に係る接合体、接合体の製造方法は、どのような分野で用いられてもよいが、特に製造プロセス、あるいは製品使用時に高温条件下に置かれる電子機器部品、半導体デバイス特にパワー系半導体デバイスにおける部品の接合に好適に用いられる。特に半導体素子とリードフレームとの接合に際しては特に好適に用いられる。 The bonded body and the manufacturing method of the bonded body according to the present invention may be used in any field, but in particular, an electronic device component, a semiconductor device, particularly a power semiconductor, which is placed under a high temperature condition during the manufacturing process or product use. It is suitably used for joining parts in a device. In particular, it is particularly preferably used for joining a semiconductor element and a lead frame.
図４は、本発明のさらに別の実施形態である半導体装置を示す正面図である。尚、図４の半導体装置の右半分は、この半導体装置の理解を容易にするために、透視図としている。この実施形態の半導体装置は、リード２１、封止樹脂２２、ワイヤ２３、リード部２４を有するリードフレーム２５、接合材の層２６及び半導体素子２７を含んでなるものである。２本のリード２１は、ワイヤ２３で半導体素子２７とそれぞれ接続される。リードフレーム２５のリード部２４は、２本のリード２１の間に配置される。これらの２本のリード２１及びリード部２４が、それぞれ、例えばエミッタ、ベース、コレクタとして機能する。 FIG. 4 is a front view showing a semiconductor device according to still another embodiment of the present invention. The right half of the semiconductor device in FIG. 4 is a perspective view for easy understanding of the semiconductor device. The semiconductor device of this embodiment includes a lead 21, a sealing resin 22, a wire 23, a lead frame 25 having a lead portion 24, a bonding material layer 26, and a semiconductor element 27. The two leads 21 are connected to the semiconductor element 27 by wires 23, respectively. The lead portion 24 of the lead frame 25 is disposed between the two leads 21. These two leads 21 and lead portions 24 function as, for example, an emitter, a base, and a collector, respectively.
前記半導体装置において、前記金属リードフレームは用途に応じて選択可能である。金属リードフレームとして使用される主たる金属材料の構成元素はＺｎと金属間化合物を形成する。金属材料は、具体的には、Ｃｕ、Ａｇ、Ａｕ、Ｐｔ、Ｐｄ若しくはＮｉから選ばれた金属又はこれらの少なくとも１種を主体とする合金である。これらの金属を用いた場合には、耐熱性に優れた接合部を形成することができる。これらの金属材料のうち、Ｃｕ、Ａｇ若しくはＡｕから選ばれた金属又はこれらの少なくとも１種を主体とする合金がより耐熱性を有するため好ましく、Ｃｕ又はＣｕ基合金からなることが良好な導電性を有するためより好ましい。なお、これらの金属以外でもＡｌ、Ｇｅ、Ｂｅ、Ｎｂ、Ｍｎなどが、合金成分として使われてもよい。 In the semiconductor device, the metal lead frame can be selected according to the application. The constituent element of the main metal material used as the metal lead frame forms an intermetallic compound with Zn. Specifically, the metal material is a metal selected from Cu, Ag, Au, Pt, Pd, or Ni, or an alloy mainly composed of at least one of these. When these metals are used, a joint having excellent heat resistance can be formed. Among these metal materials, a metal selected from Cu, Ag, or Au or an alloy mainly composed of at least one of them is preferable because it has higher heat resistance, and is preferably made of Cu or a Cu-based alloy. This is more preferable. In addition to these metals, Al, Ge, Be, Nb, Mn, etc. may be used as alloy components.
図５は、図４の半導体装置を破線により表された切断面において切断した断面図である。図６は、図５の断面図の破線部をさらに拡大した断面図である。 FIG. 5 is a cross-sectional view of the semiconductor device of FIG. 4 cut along a cut surface indicated by a broken line. 6 is a cross-sectional view further enlarging the broken line portion of the cross-sectional view of FIG.
図６を参照して理解されるように、この半導体装置は、半導体素子２７の金属薄膜がメタライズさた面と金属リードフレーム２５とを、Ｚｎ−Ｓｎ系合金からなる接合材の層２６とＳｎ相２８を含むＺｎと金属リードフレームの構成元素との金属間化合物の層２９を介して接合され、封止樹脂２２により封止されるものである。リードフレーム２５は、例えばＡｇめっきが施されていてもよい。 As can be understood with reference to FIG. 6, the semiconductor device includes a surface of the semiconductor element 27 on which the metal thin film is metallized and the metal lead frame 25, a bonding material layer 26 made of a Zn—Sn alloy, and Sn. It is bonded via a layer 29 of an intermetallic compound of Zn containing the phase 28 and a constituent element of the metal lead frame, and sealed with a sealing resin 22. The lead frame 25 may be subjected to Ag plating, for example.
このような半導体装置は、上記の接合体の製造方法により製造することができる。なお、半導体装置の製造方法において、金属薄膜は、用途に応じて選択可能である。Ａｕ、Ｎｉ、Ａｇ、Ｃｕ、Ｐｄ、Ｐｔ及びＡｌ、またはこれらの金属材料を用いた金属合金からなる群より選択される材料を用いることが望ましい。また、半導体装置の製造方法において、例えば、予め、半導体素子２７上にＡｕなどの金属層が設けられ、その表面上にＳｎ又はＳｎ基合金からなる金属層を形成させて、加熱接合することにより半導体装置を製造する場合には、半導体素子２７上に形成するＡｕなどの金属層の厚さにもよるが、ＺｎとＡｕなどとの金属間化合物の層が形成されてもよい。 Such a semiconductor device can be manufactured by the above manufacturing method of the joined body. In the semiconductor device manufacturing method, the metal thin film can be selected according to the application. It is desirable to use a material selected from the group consisting of Au, Ni, Ag, Cu, Pd, Pt, and Al, or a metal alloy using these metal materials. In the method of manufacturing a semiconductor device, for example, a metal layer such as Au is provided on the semiconductor element 27 in advance, and a metal layer made of Sn or a Sn-based alloy is formed on the surface, and then heated and bonded. When manufacturing a semiconductor device, although depending on the thickness of a metal layer such as Au formed on the semiconductor element 27, an intermetallic compound layer of Zn and Au may be formed.
なお、本発明のさらに別の実施形態に係る半導体装置としては、例えばダイオード、トランジスタ、コンデンサ、サイリスタ等を挙げることができる。 Examples of the semiconductor device according to another embodiment of the present invention include a diode, a transistor, a capacitor, and a thyristor.
本発明のさらに他の実施形態に係る半導体装置の製造方法としては、半導体装置の製造の際に適当な圧力を加えて製造することもできる。このような半導体装置の製造方法は、有害なＰｂ及び高価なＡｕを実質的含まない接合材を使用して、高温条件下にさらされても半導体素子とリードフレーム間の接合強度は維持され、信頼性の高い半導体装置を短時間で提供できるものである。 As a method for manufacturing a semiconductor device according to still another embodiment of the present invention, an appropriate pressure can be applied when manufacturing the semiconductor device. Such a method for manufacturing a semiconductor device uses a bonding material substantially free of harmful Pb and expensive Au, and maintains the bonding strength between the semiconductor element and the lead frame even when exposed to high temperature conditions. A highly reliable semiconductor device can be provided in a short time.
さらに、本発明の実施形態に係る接合体について顕微鏡写真を用いて説明する。図７は、第１の基材であるＣｕ板１の上に、Ｓｎ又はＳｎ３．５Ａｇ合金による金属皮膜を形成し、その上にＺｎ−４０Ｓｎ系合金の接合材５を積層して３５０℃で５秒間加熱してＣｕ板１と接合材５を一体化した模擬接合体の接合界面近傍における断面の顕微鏡写真である（（ａ）２００倍、（ｂ）５００倍、（ｃ）１０００倍）。図中、符号３はＳｎ相、符号４はＺｎ−Ｃｕ金属間化合物の層である。なお、試料Ｎｏ．１はＣｕ上にＳｎ金属層を形成させずに接合体を製造したもの、試料Ｎｏ．２は、Ｃｕ板１上に５μｍのＳｎ金属層を形成させて接合体を製造したもの、試料Ｎｏ．３は、Ｃｕ板１上に１０μｍのＳｎ金属層を形成させて接合体を製造したもの、試料Ｎｏ．４は、Ｃｕ板１上に１０μｍのＳｎ３．５Ａｇ金属層を形成させて接合体を製造したものである。 Furthermore, the bonded body according to the embodiment of the present invention will be described using a micrograph. FIG. 7 shows a case where a metal film made of Sn or Sn3.5Ag alloy is formed on a Cu plate 1 as a first substrate, and a bonding material 5 of Zn-40Sn alloy is laminated thereon at 350 ° C. It is the microscope picture of the cross section in the joint interface vicinity of the mock joined body which united Cu board 1 and joining material 5 by heating for 5 seconds ((a) 200 times, (b) 500 times, (c) 1000 times). In the figure, reference numeral 3 is an Sn phase, and reference numeral 4 is a layer of Zn—Cu intermetallic compound. Sample No. No. 1 produced a joined body without forming a Sn metal layer on Cu. No. 2 is a sample manufactured by forming a 5 μm Sn metal layer on the Cu plate 1 to produce a joined body, Sample No. No. 3 is a sample in which a 10 μm Sn metal layer was formed on the Cu plate 1 to produce a joined body. 4 shows a joined body manufactured by forming a 10 μm Sn3.5Ag metal layer on the Cu plate 1.
以下、実施例により本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail by way of examples.
（実施例１）
パワー系半導体装置における半導体素子とリードフレームとの接合を行った。半導体素子とリードフレームとの接合状態については、図３を参照されたい。このパワー系半導体モジュールでは、１０ｍｍ角のシリコン半導体素子に、第２基材として、Ａｕを蒸着することによりメタライズが施され０．１μｍ厚のＡｕよりなるメタライズ層２が形成されている。さらに、メタライズ層２の表面には、５μｍ厚のＳｎよりなる金属層８を蒸着形成した。また、第１の基材としてＣｕよりなるリードフレーム１上にも、５μｍ厚のＳｎからなる金属層７を無電解めっき処理により施した。上記金属層の間に、５０μｍ厚のシート状のＺｎ−４０ｍａｓｓ％Ｓｎ接合材９を載置し、金属層７と接合材９とが、また、金属層８と接合材９とが接するように積層し、その後加熱して接合を行なった。加熱は、１００ｐｐｍ以下の酸素濃度にしたフォーミングガス（窒素＋水素）雰囲気中で熱板上で加熱した。加熱条件は、３５０℃、５秒とした。
Example 1
The semiconductor element and the lead frame in the power semiconductor device were joined. Refer to FIG. 3 for the bonding state between the semiconductor element and the lead frame. In this power semiconductor module, a 10 mm square silicon semiconductor element is metalized by vapor-depositing Au as a second base material to form a metallized layer 2 made of 0.1 μm thick Au. Further, a metal layer 8 made of Sn having a thickness of 5 μm was formed on the surface of the metallized layer 2 by vapor deposition. Also, a metal layer 7 made of Sn having a thickness of 5 μm was applied to the lead frame 1 made of Cu as the first base material by electroless plating. A 50 μm thick sheet-like Zn-40 mass% Sn bonding material 9 is placed between the metal layers so that the metal layer 7 and the bonding material 9 are in contact with each other, and the metal layer 8 and the bonding material 9 are in contact with each other. It laminated | stacked and it joined by heating after that. The heating was performed on a hot plate in a forming gas (nitrogen + hydrogen) atmosphere having an oxygen concentration of 100 ppm or less. The heating conditions were 350 ° C. and 5 seconds.
接合後の接合界面の断面をＳＥＭ観察から、際立ったボイドの発生は認められず、良好な接合性を示した。 From the SEM observation of the cross section of the bonded interface after bonding, no significant voids were observed, indicating good bonding properties.
最後に接合したリードフレームと半導体素子とを樹脂封止し、２５０℃の耐熱性を有したパワー系半導体装置を得た。 Finally, the joined lead frame and the semiconductor element were sealed with a resin to obtain a power semiconductor device having heat resistance of 250 ° C.
（実施例２）
本実施例ではリードフレーム１に、無電解めっきにより１０μｍ厚のＳｎ−Ａｇ共晶合金層７を施し、接合材として、シート状のＺｎ−８０ｍａｓｓ％Ｓｎ接合材９を用いた以外は、実施例１と同様にパワー系半導体装置を得た。すわわち、この接合層９を、Ｃｕからなるリードフレーム上１に施されたＳｎ−Ａｇ共晶合金層７に載置し、その上にＡｕメタライズ層２を施した半導体素子１７を載置して、１００ｐｐｍの酸素濃度にしたフォーミングガス（窒素＋水素）雰囲気中で熱板上で加熱した。加熱条件は、３５０℃、５秒とした。
(Example 2)
In this embodiment, the lead frame 1 was subjected to electroless plating with a 10 μm-thick Sn—Ag eutectic alloy layer 7, and a sheet-like Zn-80 mass% Sn bonding material 9 was used as the bonding material. As in Example 1, a power semiconductor device was obtained. That is, the bonding layer 9 is placed on the Sn—Ag eutectic alloy layer 7 applied on the lead frame 1 made of Cu, and the semiconductor element 17 provided with the Au metallized layer 2 is placed thereon. Then, it was heated on a hot plate in a forming gas (nitrogen + hydrogen) atmosphere having an oxygen concentration of 100 ppm. The heating conditions were 350 ° C. and 5 seconds.
接合後の接合界面の断面をＳＥＭ観察から、際立ったボイドは発生せず良好な接合性を示した。 From the SEM observation of the cross section of the bonded interface after bonding, no conspicuous voids were generated and good bonding properties were shown.
最後に接合したリードフレームと半導体素子とを樹脂封止し、パワー系半導体装置を得た。 Finally, the joined lead frame and the semiconductor element were sealed with resin to obtain a power semiconductor device.
（実施例３）
本実施例では、半導体素子１７上に真空蒸着により形成された０．１μｍ厚のＡｕ層２および１０μｍ厚のＳｎ層８の表面上に、更に真空蒸着により１０μｍ厚のＺｎ−Ｓｎ系接合層９を形成した以外は実施例１と同様にパワー系半導体装置を得た。蒸着により形成されたＺｎ−Ｓｎ接合層９は、Ｓｎが５０．０重量％、残りがＺｎからなるＺｎ―Ｓｎ系合金を用いている。この接合層９を、Ｃｕからなるリードフレーム１上に施されたＳｎ層７上に搭載して、１００ｐｐｍの酸素濃度にしたフォーミングガス（窒素＋水素）雰囲気中で熱板上で加熱した。加熱条件は、３５０℃、５秒とした。
(Example 3)
In this embodiment, a Zn-Sn bonding layer 9 having a thickness of 10 μm is further formed on the surfaces of the Au layer 2 having a thickness of 0.1 μm and the Sn layer 8 having a thickness of 10 μm formed on the semiconductor element 17 by vacuum deposition. A power semiconductor device was obtained in the same manner as in Example 1 except that was formed. The Zn—Sn bonding layer 9 formed by vapor deposition uses a Zn—Sn alloy composed of 50.0% by weight of Sn and the balance of Zn. The bonding layer 9 was mounted on the Sn layer 7 formed on the lead frame 1 made of Cu, and heated on a hot plate in a forming gas (nitrogen + hydrogen) atmosphere having an oxygen concentration of 100 ppm. The heating conditions were 350 ° C. and 5 seconds.
接合後の接合界面の断面をＳＥＭ観察から、際立ったボイドは発生せず良好な接合性を示した。 From the SEM observation of the cross section of the bonded interface after bonding, no conspicuous voids were generated and good bonding properties were shown.
最後に接合したリードフレームと半導体素子とを樹脂封止し、パワー系半導体装置を得
た。
Finally, the joined lead frame and the semiconductor element were sealed with resin to obtain a power semiconductor device.
１…第１の基材、２…第２の基材、３，１１，１３…Ｓｎ相、４，１２…Ｚｎと第１の基材の構成元素とからなる金属間化合物の層、５，１５…Ｚｎ−Ｓｎ系合金からなる接合材の層、６，１６…接合体、７，８…Ｓｎ又はＳｎ基合金からなる金属層、９…接合材、１０，１８…積層体、１４…Ｚｎと第２の基材の構成元素とからなる金属間化合物の層、１７…母材、２１…リード、２２…封止樹脂、２３…ワイヤ、２４…リード部、２５…リードフレーム、２６…接合材の層、２７…半導体素子、２８…Ｓｎ相、２９…Ｚｎと金属リードフレームの構成元素との金属間化合物の層 DESCRIPTION OF SYMBOLS 1 ... 1st base material, 2 ... 2nd base material, 3,11,13 ... Sn phase, 4,12 ... layer of the intermetallic compound which consists of Zn and the structural element of a 1st base material, 5, DESCRIPTION OF SYMBOLS 15 ... Bonding material layer made of Zn-Sn alloy, 6, 16 ... bonded body, 7, 8 ... metal layer made of Sn or Sn-based alloy, 9 ... bonding material, 10, 18 ... laminated body, 14 ... Zn A layer of an intermetallic compound composed of a constituent element of the second base material, 17 ... base material, 21 ... lead, 22 ... sealing resin, 23 ... wire, 24 ... lead portion, 25 ... lead frame, 26 ... joint Material layer, 27... Semiconductor element, 28... Sn phase, 29... Intermetallic compound layer of Zn and constituent element of metal lead frame
Claims (9)
少なくとも接合面が金属からなる第２の基材と、
Ｚｎ−Ｓｎ系合金からなる接合材の層、該接合材と前記第１の基材との界面反応により形成されたＳｎ相を含むＺｎ、及び前記第１の基材の構成元素との金属間化合物の層とを有する、前記第１の基材と前記第２の基材とを接合する接合層とからなることを特徴とする接合体。 A first substrate made of a metal selected from Cu, Ag, Au, Pt, Pd, and Ni or an alloy mainly composed of at least one of them,
A second base material having at least a joining surface made of metal;
Between a metal of a bonding material layer made of a Zn-Sn alloy, Zn containing an Sn phase formed by an interface reaction between the bonding material and the first base material, and a constituent element of the first base material A joined body comprising a joining layer for joining the first base material and the second base material, each having a compound layer.
前記金属リードフレームに実装された接合面がメタライズされた半導体素子と、
前記金属リードフレームと前記半導体素子のメタライズされた面を接合する、Ｚｎ−Ｓｎ系合金からなる第１の層と前記金属リードフレームとの界面反応により形成されたＳｎ相を含むＺｎと前記金属リードフレームの構成元素との金属間化合物からなる第２の層とを有する接合層と、
前記半導体素子を封止する封止樹脂と
を有することを特徴とする半導体装置。 A metal lead frame made of a metal selected from Cu, Ag, Au, Pt, Pd and Ni, or an alloy mainly composed of at least one of them,
A semiconductor element having a metallized bonding surface mounted on the metal lead frame;
Zn containing Sn phase formed by an interfacial reaction between the metal lead frame and the first layer made of a Zn—Sn alloy that joins the metallized surface of the metal lead frame and the semiconductor element, and the metal lead A bonding layer having a second layer made of an intermetallic compound with a constituent element of the frame;
A semiconductor device comprising: a sealing resin for sealing the semiconductor element.
前記積層体を、非酸化雰囲気中で、３００℃以上、４５０℃以下の温度で加熱して、前記第１の基材と前記接合材との接合界面に、Ｓｎ相を含むＺｎと前記第１の基材の構成元素との金属間化合物の層を形成させつつ一体に接合する工程と
からなることを特徴とする接合体の製造方法。 A first substrate made of a metal selected from Cu, Ag, Au, Pt, Pd, and Ni or an alloy mainly composed of at least one of them, and having a metal layer made of Sn or a Sn-based alloy formed on the bonding surface And a laminating step in which at least a second base material having a bonding surface made of a metal is laminated through a bonding material made of a Zn-Sn alloy,
The laminated body is heated in a non-oxidizing atmosphere at a temperature of 300 ° C. or higher and 450 ° C. or lower, and Zn containing Sn phase at the bonding interface between the first base material and the bonding material and the first And a step of integrally joining together while forming a layer of an intermetallic compound with a constituent element of the base material.
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| TWI381901B (en) * | 2009-12-15 | 2013-01-11 | Univ Yuan Ze | Method for inhibiting formation of tin-nickel intermetallic in solder joints |
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| TWI381901B (en) * | 2009-12-15 | 2013-01-11 | Univ Yuan Ze | Method for inhibiting formation of tin-nickel intermetallic in solder joints |
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