WO2006127813A3 - Methods for signal to noise improvement in bulk mems accelerometer chips and other mems devices - Google Patents

Methods for signal to noise improvement in bulk mems accelerometer chips and other mems devices Download PDF

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Publication number
WO2006127813A3
WO2006127813A3 PCT/US2006/020083 US2006020083W WO2006127813A3 WO 2006127813 A3 WO2006127813 A3 WO 2006127813A3 US 2006020083 W US2006020083 W US 2006020083W WO 2006127813 A3 WO2006127813 A3 WO 2006127813A3
Authority
WO
WIPO (PCT)
Prior art keywords
mems
signal
methods
layer
proof
Prior art date
Application number
PCT/US2006/020083
Other languages
French (fr)
Other versions
WO2006127813A2 (en
Inventor
Henry C Abbink
Gabriel M Kuhn
Howard Ge
Daryl Sakaida
Original Assignee
Northrop Grumman Corp
Henry C Abbink
Gabriel M Kuhn
Howard Ge
Daryl Sakaida
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northrop Grumman Corp, Henry C Abbink, Gabriel M Kuhn, Howard Ge, Daryl Sakaida filed Critical Northrop Grumman Corp
Publication of WO2006127813A2 publication Critical patent/WO2006127813A2/en
Publication of WO2006127813A3 publication Critical patent/WO2006127813A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)

Abstract

A fabrication method for reducing parasitic capacitance in a semiconductor device, the semiconductor device having a guard layer (120, 125) separated from a proof mass layer (130) by a bond line (305) , and an electrode (210) separated by a signal gap (320) from a proof mass paddle 205) , by applying a nitride layer (507) on a wafer area for the electrode/proof (210) mass paddle (205) , oxidizing a wafer area for the guard/proof mass layer to form an oxide layer (509) on the surface; and etching the nitride layer (507) on the wafer area of the electrode/proof (210) mass paddle (205) .
PCT/US2006/020083 2005-05-25 2006-05-24 Methods for signal to noise improvement in bulk mems accelerometer chips and other mems devices WO2006127813A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68428205P 2005-05-25 2005-05-25
US60/684,282 2005-05-25

Publications (2)

Publication Number Publication Date
WO2006127813A2 WO2006127813A2 (en) 2006-11-30
WO2006127813A3 true WO2006127813A3 (en) 2007-01-18

Family

ID=37027708

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/020083 WO2006127813A2 (en) 2005-05-25 2006-05-24 Methods for signal to noise improvement in bulk mems accelerometer chips and other mems devices

Country Status (1)

Country Link
WO (1) WO2006127813A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108946655B (en) * 2017-05-23 2021-04-30 北京大学 Process compatibility method for single-chip integrated inertial device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0611221A1 (en) * 1993-02-10 1994-08-17 Sextant Avionique S.A. Capacitive microsensor with low parasitic capacitance and manufacturing process
JPH08320343A (en) * 1995-05-25 1996-12-03 Nec Corp Acceleration sensor and its manufacture
WO2000007028A1 (en) * 1998-07-31 2000-02-10 Litton Systems, Inc. Micro-mechanical semiconductor accelerometer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0611221A1 (en) * 1993-02-10 1994-08-17 Sextant Avionique S.A. Capacitive microsensor with low parasitic capacitance and manufacturing process
JPH08320343A (en) * 1995-05-25 1996-12-03 Nec Corp Acceleration sensor and its manufacture
WO2000007028A1 (en) * 1998-07-31 2000-02-10 Litton Systems, Inc. Micro-mechanical semiconductor accelerometer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 04 30 April 1997 (1997-04-30) *

Also Published As

Publication number Publication date
WO2006127813A2 (en) 2006-11-30

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