WO2006125730A1 - Photodetecteur organique en construction mince couche - Google Patents
Photodetecteur organique en construction mince couche Download PDFInfo
- Publication number
- WO2006125730A1 WO2006125730A1 PCT/EP2006/062300 EP2006062300W WO2006125730A1 WO 2006125730 A1 WO2006125730 A1 WO 2006125730A1 EP 2006062300 W EP2006062300 W EP 2006062300W WO 2006125730 A1 WO2006125730 A1 WO 2006125730A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- organic
- photodetector
- layer
- bistable
- bistable element
- Prior art date
Links
- 238000010276 construction Methods 0.000 title abstract description 4
- 239000010410 layer Substances 0.000 claims description 33
- 239000012044 organic layer Substances 0.000 claims description 7
- 230000010354 integration Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- HGVNXEVNBBVJGZ-UHFFFAOYSA-N O1C2=C(N(C3=CC=CC=C13)C1=CC=C(C3=CC(C#N)=C(C#N)C=C3C3=CC=C(N4C5=CC=CC=C5OC5=C4C=CC=C5)C=C3)C=C1)C=CC=C2 Chemical compound O1C2=C(N(C3=CC=CC=C13)C1=CC=C(C3=CC(C#N)=C(C#N)C=C3C3=CC=C(N4C5=CC=CC=C5OC5=C4C=CC=C5)C=C3)C=C1)C=CC=C2 HGVNXEVNBBVJGZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 210000004916 vomit Anatomy 0.000 description 1
- 230000008673 vomiting Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
Definitions
- the invention relates to an organic-based photodetector with an organic-based readout device in a space-saving thin-film construction.
- Photodetectors have two basic operating modes, the so-called integration mode and the so-called single-electron mode. In the former, photons are collected and stored over a period of time. Thereafter, during the "readout period", the photons or the signals produced by the individual photons are read out by means of transistors, in particular thin-film transistors.
- the single ⁇ NEN photons are punched directly into individual electrical signals Gewan ⁇ which can then be measured.
- the integration mode is used in the medical field (e.g., in detector elements in X-ray machines) as well as in conventional optical photodetectors.
- the prior art of these devices typically comprises egg ⁇ NEN detector over one pixelated usually photoactive layer over a time period collects the number of photons and stores NEN-housed ⁇ .
- the detector read-out apparatus which comprises a switch for each detector pixel, the period by which the respective pixels of the photoactive layer to the readout ⁇ is switchable.
- this switch is designed as a second, opposite diode (it is called the passive matrix arrangement with two lines per pixel).
- TFT thin film transistor
- Object of the present invention is therefore to provide an organic photodetector in the integration mode, which has a simple and inexpensive switch, which is made in the same thin-film technology as the actual De ⁇ detector.
- a bistable element according to the invention is described, for example, in the publication by Liping Ma, Jie Liu, Seungmoon Pyo and Yang Yang in Applied Physics Letters, Volume 80, Number 3 January 21, 2002.
- an organic compound for example 2-amino-4,5-imidazolene dicarbonitrile (AIDCN) in a sandwich structure with a centrally arranged metallic layer, for example aluminum, can be used as a switch because the composite of the three layers mentioned in US Pat Ground state initially has a very high resistance. Is now a voltage of typically about 3 V over the bistable element applies, then the sen ⁇ resistance reduced by several orders of magnitude. This state is maintained even when the voltage is off for any length of time.
- AIDCN 2-amino-4,5-imidazolene dicarbonitrile
- bistable switches By briefly applying a negative voltage, the resistance of the element can eventually return to its original (high) level brought ⁇ the. Therefore, such an element can be between two sta ⁇ bilen states back and forth. Another advantage of the aforementioned bistable switches is their extremely short switching time in the range of 1-lOns.
- a read-out device which can be constructed of standard components, such as are already used, for example, in the CCD technology and on the one hand the control of the switch (that is to be applied on the bistable element voltage) and on the other ⁇ hand the Transfer or processing of the read-out signals
- an organic photodetector according to the invention it is therefore proposed to install a bistable element for the integration mode on the rear side of the detector instead of the conventional transistors as a switch for the transition from the integration period to the readout period.
- the bistable element is not attached individually for each pixel to be read out, but over a large area for all pixels in the form of a layer - at least 3-ply.
- the leads must be structured in accordance with the pixel structure of the photoactive layer.
- the bistable layer itself may be patterned according to the pixel structure of the underlying photoactive layer to make its own switch for each pixel.
- the substrate or the carrier layer 1 can usually be found under the thickness of the overall system.
- the first electrode layer 2 On top of this lies the first electrode layer 2, generally a transparent or at least one semitransparent layer, for example Ito (indium tin oxide).
- a photoactive organic layer 3 there may be meh ⁇ eral organic layers or mixed systems, which form a photoactive system at the site).
- the overlying layer is again a conductive layer, the second electrode layer 4.
- the next higher layer is the first organic layer 5 of the bistable element 9, the me ⁇ tallische layer 6, in sandwich structure of the two organic layers 5 and 7 of the bistable
- the second organic layer of the bistable element 7 and the termination forms the conductive layer 8 which, depending on the circuit, forms the counter electrode to the electrode layer 4 (for switching the element) and 2 (for reading out the stored charge carriers) ,
- the bistable element may comprise any number of organic layers with any number of metallic layer as long as it in combination the essential egg ⁇ genschaft of a bistable switch, in particular the stability ⁇ formality in two different resistance states, FIG.
- the location of the critical voltage point of the bistable element is such that it is in the range between 2 and 7 volts, so that a good voltage regulation is ensured.
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112006001309T DE112006001309A5 (de) | 2005-05-23 | 2006-05-15 | Organischer Photodetektor in Dünnschichtbauweise |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005023703.7 | 2005-05-23 | ||
DE102005023703 | 2005-05-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006125730A1 true WO2006125730A1 (fr) | 2006-11-30 |
Family
ID=36758297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2006/062300 WO2006125730A1 (fr) | 2005-05-23 | 2006-05-15 | Photodetecteur organique en construction mince couche |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE112006001309A5 (fr) |
WO (1) | WO2006125730A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8513612B2 (en) | 2009-04-22 | 2013-08-20 | Koninklijke Philips N.V. | Imaging measurement system with a printed organic photodiode array |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4035774A (en) * | 1975-12-19 | 1977-07-12 | International Business Machines Corporation | Bistable electroluminescent memory and display device |
EP0330395A2 (fr) * | 1988-02-22 | 1989-08-30 | Canon Kabushiki Kaisha | Elément interrupteur |
US20040016923A1 (en) * | 1998-02-02 | 2004-01-29 | Gang Yu | Column-row addressable electric microswitch arrays and sensor matrices employing them |
WO2005046209A1 (fr) * | 2003-11-05 | 2005-05-19 | Siemens Aktiengesellschaft | Numeriseur/copieur a base de materiaux organiques |
-
2006
- 2006-05-15 WO PCT/EP2006/062300 patent/WO2006125730A1/fr active Application Filing
- 2006-05-15 DE DE112006001309T patent/DE112006001309A5/de not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4035774A (en) * | 1975-12-19 | 1977-07-12 | International Business Machines Corporation | Bistable electroluminescent memory and display device |
EP0330395A2 (fr) * | 1988-02-22 | 1989-08-30 | Canon Kabushiki Kaisha | Elément interrupteur |
US20040016923A1 (en) * | 1998-02-02 | 2004-01-29 | Gang Yu | Column-row addressable electric microswitch arrays and sensor matrices employing them |
WO2005046209A1 (fr) * | 2003-11-05 | 2005-05-19 | Siemens Aktiengesellschaft | Numeriseur/copieur a base de materiaux organiques |
Non-Patent Citations (2)
Title |
---|
MA LIPING ET AL: "Organic bistable light-emitting devices", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 80, no. 3, 21 January 2002 (2002-01-21), pages 362 - 364, XP012031311, ISSN: 0003-6951 * |
XUE JIANGENG ET AL: "Organic optical bistable switch", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 82, no. 1, 6 January 2003 (2003-01-06), pages 136 - 138, XP012033419, ISSN: 0003-6951 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8513612B2 (en) | 2009-04-22 | 2013-08-20 | Koninklijke Philips N.V. | Imaging measurement system with a printed organic photodiode array |
Also Published As
Publication number | Publication date |
---|---|
DE112006001309A5 (de) | 2008-05-08 |
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