WO2006120861A1 - Tft array substrate inspecting apparatus - Google Patents

Tft array substrate inspecting apparatus Download PDF

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Publication number
WO2006120861A1
WO2006120861A1 PCT/JP2006/308337 JP2006308337W WO2006120861A1 WO 2006120861 A1 WO2006120861 A1 WO 2006120861A1 JP 2006308337 W JP2006308337 W JP 2006308337W WO 2006120861 A1 WO2006120861 A1 WO 2006120861A1
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WO
WIPO (PCT)
Prior art keywords
tft array
array substrate
light
inspection apparatus
transistor
Prior art date
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PCT/JP2006/308337
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French (fr)
Japanese (ja)
Inventor
Makoto Shinohara
Original Assignee
Shimadzu Corporation
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Publication date
Application filed by Shimadzu Corporation filed Critical Shimadzu Corporation
Priority to CN200680002471XA priority Critical patent/CN101107534B/en
Priority to JP2007528192A priority patent/JPWO2006120861A1/en
Publication of WO2006120861A1 publication Critical patent/WO2006120861A1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136254—Checking; Testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2594—Measuring electric fields or potentials

Definitions

  • the present invention relates to a TFT array substrate inspection apparatus that inspects an array formed on a substrate such as a TFT (eg, thin film transistor array) substrate.
  • a TFT eg, thin film transistor array
  • a TFT array substrate inspection device drives a TFT array substrate with a defect detection signal pattern and inspects the defect position, the type of defect, etc. by detecting the driving state at this time. Make a decision.
  • the driving state of the TFT array can be detected by various methods such as a method of irradiating an electron beam or light and a method of detecting a signal flowing through the TFT.
  • the TFT array substrate inspection device that detects the secondary electron intensity is based on the intensity of the secondary electrons generated by the TFT array substrate, based on the state of the ITO voltage generated by driving the TFT array substrate. Judgment is performed.
  • the TFT array substrate inspection device that detects the reflected state of the irradiated light changes the refractive index of the electro-optic element by the electric field generated by the TFT array substrate, and this change in refractive index is reflected in the reflection angle of the irradiated light, etc. Judgment is made by detecting.
  • Patent Document 1 Japanese Patent Laid-Open No. 2005-24378
  • Patent Document 2 Japanese Patent Laid-Open No. 11-271800
  • TFT arrays There are various types of defects in TFT arrays.
  • the wiring to be connected There are open defects that become open states and short-circuit defects that cause short-circuits between wires to be insulated.
  • defects in the TFT array can be easily determined based on the secondary electron intensity and the reflection angle of the irradiated light. Can be determined.
  • the open defect includes not only a state in which the wiring is completely open but also a broken state in addition to a state in which the wiring is completely open.
  • Such an incomplete defect has a problem that it is difficult to determine the defect by a conventional inspection method called weak leak.
  • an object of the present invention is to provide a TFT array substrate inspection apparatus that can solve the above-described problems and can easily determine a defect called weak leak.
  • the present invention provides a drive state detection device that detects a drive state of a transistor on a TFT array substrate, and a transistor property change device that changes the characteristics of the transistors constituting the TFT array substrate.
  • the TFT array substrate inspection apparatus includes: an inspection apparatus that inspects the driving state of the TFT array substrate in a state where the characteristics of the transistor are changed from an output of the driving state detection apparatus.
  • the TFT array inspection apparatus of the present invention it is possible to easily determine a defect called weak leak.
  • FIG. 1 is a diagram for explaining a configuration example of a first embodiment of the present invention.
  • FIG. 2 is a diagram for explaining a configuration example of a secondary electron detector of the present invention.
  • FIG. 3 is a diagram showing the relationship between the energy of an electron and the distance traveled by the electron in aluminum.
  • FIG. 4 shows the transmittance of visible light depending on the film thickness of aluminum.
  • FIG. 5 is a diagram for explaining the film thickness of aluminum and the transmission wavelength range of electrons and visible light.
  • FIG. 6 is a diagram for explaining a configuration example of a second embodiment of the present invention.
  • FIG. 7 is a diagram for explaining a configuration example of a third embodiment of the present invention.
  • FIG. 8 is a diagram for explaining a configuration example of a fourth embodiment of the present invention. Explanation of symbols
  • Electron beam source 12 Electron beam source
  • Electromagnetic wave irradiation device 24...
  • Electro-optic element 29 Electro-optic element
  • Electro-optic element 39 Electro-optic element
  • the first and second embodiments of the TFT array inspection apparatus of the present invention are forms for detecting secondary electrons obtained by irradiating an electron beam.
  • the third and fourth embodiments of the TFT array inspection apparatus of the present invention are forms for detecting an optical change of light by an electro-optic element.
  • the first and third embodiments are configured to change the transistor characteristics of silicon by irradiating the TFT array substrate 10 with electromagnetic waves such as visible light.
  • the transistor characteristics of silicon are changed by heating the TFT array substrate 10 with a heater (heating means).
  • a TFT array substrate inspection apparatus 1 includes an electron beam source 2 that irradiates an electron beam 3 toward the TFT array substrate 10 and secondary electrons 8 emitted from the TFT array substrate 10 by the irradiation of the electron beam 3. Detection of TFT array defects based on secondary electron detector (secondary electron detection means) 5 that detects the transistor drive state by detection and secondary electron intensity signal detected by secondary electron detector 5 And an inspection device 6 for performing the above.
  • secondary electron detector secondary electron detection means
  • the TFT array substrate inspection apparatus 1 further includes a transistor characteristic changing device that changes the transistor characteristics of the TFT array substrate 10 as transistor characteristic changing means.
  • a visible light irradiation device (visible light irradiation means) 4 is provided as the transistor characteristic changing means.
  • the visible light irradiation device 4 irradiates the visible light 7 toward the electron beam irradiation region where the electron beam 3 irradiates the TFT array substrate 10.
  • the inspection device 6 inspects the TFT array substrate 10 for defects or the like in a state where the transistor characteristics are changed by the visible light irradiation device 4 as the transistor characteristic changing device.
  • the transistor characteristics of silicon included in the TFT array substrate 10 change depending on the irradiated visible light 7.
  • the visible light irradiation device 4 can use a white light in addition to the LED. Since white lamps have a wide wavelength range, a wavelength filter can be used together in consideration of wavelength dependency depending on the type of defect. In the case of a configuration using LEDs, the wavelength can be selected according to the wavelength dependency of the defect.
  • the drain current versus gate voltage characteristics (transfer characteristics) of an a-Si (amorphous silicon) TFT have a ratio of on-state current to off-state current of 7 digits or more.
  • a-Si has a high photoconductivity, a large optical electric field effect appears when irradiated with light.
  • the off-state current increases by two orders of magnitude or more.
  • the TFT array substrate inspection apparatus 1 of the present invention enhances the leak by increasing the weak off-current leak caused by the defect due to the optical electric field effect by this light irradiation, and facilitates the defect inspection.
  • the TFT array substrate inspection device of the present invention converts the secondary electrons emitted in accordance with the voltage to a secondary electron detector. Detect with 5. The intensity of the detected secondary electrons is emphasized and detected in the defective part and the normal part, so even incomplete defects called weak leaks are well identified for defect inspection. It can be carried out.
  • the secondary electron detector 5 is reflected by the secondary electron 8 directly from the visible light irradiation device 4 or by reflection on the TFT array substrate 10 or a wall surface in the inspection device. Visible light 7 may enter.
  • a secondary electron detector having a function such as SEM a scintillator that converts an electron into light as a secondary electron detector, and a photoelectric converter such as a photomultiplier tube that converts light into an electric signal ( Since it is a configuration using a photoelectric conversion means), it reacts also with light other than secondary electrons that are detection targets. Therefore, in the TFT array substrate inspection apparatus of the present invention, when light is irradiated to the TFT array substrate 10 to be inspected, this light is mixed as a noise component during secondary electron detection, which hinders normal secondary electron detection. Will occur.
  • the surface of the scintillator of the secondary electron detector 5 is coated with aluminum, light is shielded by the aluminum, and only the secondary electrons to be detected are penetrated (transmitted).
  • FIG. 2 is a diagram for explaining a configuration example of the secondary electron detector 5.
  • the secondary electron detector 5 has a glass substrate 5b on the light incident side of the photomultiplier tube 5a.
  • a scintillator material 5c such as Csl is provided on the outer surface of the glass substrate 5b.
  • the configuration including the photomultiplier tube 5a, the glass substrate 5b, and the scintillator material 5c is the same as that of a normal secondary electron detector.
  • the secondary electron detector 5 has an aluminum thin film 5d deposited on the surface side of the scintillator material 5c by sputtering or the like.
  • a semiconductor photoelectric conversion element such as a CCD image sensor or a MOS image sensor may be used in addition to the photomultiplier tube 5a.
  • FIGS. Figure 3 This shows the relationship between the energy of electrons and the distance traveled by the electrons in aluminum.
  • the energy of the secondary electrons is a force of several eV. Since a positive voltage of several kV to 10 kV is applied to the scintillator, the secondary electrons are accelerated and incident on the scintillator at a high voltage energy. To do.
  • the moving distance of electrons having an energy of 10 eV in aluminum is 0.16 mg / cm 2 .
  • Fig. 5 shows the relationship between the aluminum film thickness described above
  • Fig. 5 (a) shows the boundary between the visible light transmission and non-transmission aluminum film thickness
  • Fig. 5 (b) shows the secondary electrons
  • Fig. 5 (c) shows the boundary between the transparent and non-transmissive aluminum film thickness.
  • Figure 5 (c) shows the range of the aluminum film thickness that allows the passage of secondary electrons without passing visible light, combining Figure 5 (a) and Figure 5 (b). Show. Therefore, by setting the aluminum film thickness in the range of 400A to 6000A, it is possible to shield visible light and allow secondary electrons to pass through the scintillator.
  • the TFT array substrate inspection apparatus 11 includes an electron beam source 12 that irradiates the electron beam 13 toward the TFT array substrate 10 and secondary electrons emitted from the TFT array substrate 10 by the irradiation of the electron beam 13.
  • the heater (heating device which is a heating means) 14 is provided. The heater 14 heats the TFT array substrate 10 to a predetermined temperature.
  • a sheath heater or a lamp can be used for the heater 14.
  • the configuration in which the TFT array substrate 10 is heated to a predetermined temperature and the above-described configuration of light irradiation can be used in combination.
  • the heating temperature can be set according to the wavelength dependency of the defect.
  • the TFT array substrate inspection apparatus 21 includes a light source 22 that emits light 23 toward the TFT array substrate 10, and an electro-optic element 29 that is disposed with a slight gap between the TFT array substrate 10 and And an optical detector 25 for detecting the light 28 reflected by the reflecting surface of the electro-optic element 29.
  • the TFT array substrate inspection apparatus 21 includes an inspection apparatus 26 that inspects defects of the TFT array based on the light intensity signal detected by the photodetector 25, and a transistor characteristic change apparatus that is an electromagnetic wave irradiation means.
  • an electromagnetic wave irradiation device electromagagnetic wave irradiation means
  • the electromagnetic wave irradiation device 24 can be a visible light irradiation device (visible light irradiation means) such as a white light or LED shown in the first embodiment.
  • the electromagnetic wave irradiation device 24 irradiates an electromagnetic wave 27 such as visible light toward an irradiation region where the light 23 irradiates the TFT array substrate 10.
  • the transistor characteristics of silicon included in the TFT array substrate 10 vary depending on the electromagnetic wave 27 irradiated.
  • the voltage distribution on the TFT array substrate 10 changes, and the electric field applied to the electro-optic element 29 also changes.
  • the electric field applied to the electro-optic element 29 changes, the refractive index of the electro-optic element 29 changes, and the emission direction of the light 23 reflected by the reflecting surface of the electro-optic element 29 changes. This change in the emission direction of the light 23 is detected as a change in the detection intensity of the light detector 25, and thus a defect inspection can be performed.
  • the voltage distribution shift due to the defect is emphasized, and the defect can be easily identified.
  • a TFT array substrate inspection apparatus 31 includes a light source 32 that emits light 33 toward the TFT array substrate 10 and an electro-optic element 39 that is disposed with a slight gap between the TFT array substrate 10 and The light detector 35 detects the light 38 reflected by the reflecting surface of the electro-optic element 39.
  • the TFT array substrate inspection device 31 is used to detect the intensity of light detected by the photodetector 35.
  • the inspection device 36 for inspecting the TFT array for defects and the like, and a heater (heating device as a heating means) 34 as a transistor characteristic changing device are provided.
  • the heater 34 heats the TFT array substrate 10 to a predetermined temperature. For this reason, a sheathed heater or a lamp can be used for the heater 34.
  • the transistor characteristics of silicon included in the TFT array substrate 10 vary depending on the heating temperature.
  • the voltage distribution on the TFT array substrate 10 changes and the electric field applied to the electro-optic element 39 also changes, and the refractive index of the electro-optic element 39 changes due to the electric field,
  • the emission direction of the light 38 reflected by the reflecting surface of the electro-optic element 39 changes. This change in the emission direction of the light 38 is detected as a change in the detection intensity of the light detector 35, whereby a defect inspection can be performed.
  • the TFT array substrate 10 is heated to a high temperature by the heater 34, the deviation of the voltage distribution due to the defect is emphasized, and the defect can be easily identified.
  • the TFT array substrate inspection apparatus is a drive state detection device (for example, the electron beam source 2 and the secondary) that detects the drive state of the transistors of the TFT array substrate 10.
  • Means comprising an electron detector 5, or means comprising an electron beam source 12 and a secondary electron detector 15, or means comprising a light source 22 and a light detector 25, or means comprising a light source 32 and a light detector 35).
  • the TFT array substrate inspection apparatus includes a transistor characteristic changing device (visible light irradiation device 4, heater 14, electromagnetic wave irradiation device 24, heater 34) that changes the characteristics of the transistors constituting the TFT array substrate 10. Yes.
  • the TFT array substrate inspection device includes an inspection device (6, 16, 26, 36) for inspecting the driving state of the TFT array substrate 10 in a state where the characteristics of the transistor have changed from the output of the driving state detection device. ing.
  • the drive state detection device of the TFT array substrate inspection device includes a beam irradiation device (electron beam sources 2 and 12) for irradiating the TFT array substrate 10 with an electron beam, The intensity of secondary electrons generated by the electron beam irradiation is detected and the detection is performed.
  • a secondary electron detector (5, 15) is input to the dredge device (6, 16).
  • the TFT array inspection apparatus having this configuration, it is possible to easily determine a defect called weak leak by detecting the intensity of secondary electrons generated from the TFT array substrate 10 by irradiation of an electron beam. Can do.
  • the drive state detection device of the TFT array substrate inspection device includes an electro-optic element (29, 39) disposed above the TFT array substrate 10 with a gap therebetween.
  • a light irradiating device (light sources 2 32) for irradiating light onto the electro-optic element (29, 39) from above; and the light reflected by the reflective film of the electro-optic element (29, 39) is a TFT array
  • a photodetector 25, 35 for detecting an optical change received by an electric field between the substrate 10 and the electro-optic element (29, 39) and inputting a detection output to the inspection device (26, 36); Yes.
  • the TFT array inspection apparatus having this configuration, it is possible to easily determine a defect called weak leak by detecting an optical change of light reflected by the reflection film of the electro-optic element (29, 39). It can be.
  • the transistor characteristics of silicon constituting the TFT array substrate 10 are changed from the state when the normal TFT array substrate 10 is driven, and this transistor By inspecting the TFT array substrate 10 with the characteristics changed, it is possible to easily determine a defect called weak leak.
  • silicon when silicon is irradiated with electromagnetic waves or heat is applied, the transistor characteristics of silicon change from the normal state.
  • silicon has a characteristic that the optical electric field effect is large, and the off-current increases when irradiated with light in the visible light region.
  • this property is used to increase off-current by irradiating light in the visible light region with respect to defects that cause weak off-current leakage in a state where light in the visible light region is not irradiated. This enhances the leak. As a result, it is possible to easily detect a defect called a weak leak.
  • the TFT array substrate inspection apparatus is a transistor characteristic changing apparatus that changes the transistor characteristics of silicon constituting the TFT array substrate 10 in the TFT array substrate inspection apparatus that inspects the TFT array substrate 10. It is set as the structure provided with.
  • This transistor characteristic change device changes the transistor characteristics of the silicon that constitutes the TFT array substrate 10.
  • the TFT array substrate 10 in which the transistor characteristics are changed is inspected.
  • the first aspect of the TFT array substrate inspection apparatus irradiates the TFT array substrate 10 with an electron beam, and determines the intensity of secondary electrons generated by the electron beam irradiation as a secondary electron detector.
  • the TFT array substrate inspection device that inspects the TFT array substrate 10 with this secondary electron intensity is equipped with a transistor characteristic changing device that changes the transistor characteristics of the silicon that constitutes the TFT array substrate 10, and the transistor characteristics are The intensity of the secondary electrons obtained by irradiating the electron beam to the TFT array substrate 10 in the changed state is detected.
  • an electromagnetic wave irradiation device that irradiates the TFT array substrate 10 with electromagnetic waves can be used.
  • the electromagnetic wave irradiation device changes the transistor characteristics to silicon constituting the TFT array substrate 10 by irradiating the TFT array substrate 10 with electromagnetic waves, and detects the intensity of secondary electrons generated from the TFT array substrate 10 at this time.
  • the electromagnetic wave irradiation device is a visible light irradiation device that emits light in the visible light region.
  • the off-state current of the silicon constituting the TFT array substrate 10 is increased, and the secondary electron intensity generated from the TFT array substrate 10 is detected.
  • the electromagnetic wave to be irradiated infrared light, ultraviolet light, radiation, or the like can be used in addition to light in the visible light region.
  • a heater that raises the temperature of the TFT array substrate 10 can be used.
  • the heater changes the transistor characteristics to silicon constituting the TFT array substrate 10 by heating the TFT array substrate 10, and detects the secondary electron intensity generated from the TFT array substrate 10 at this time.
  • a second aspect of the TFT array substrate inspection apparatus of the present invention is to detect the reflection of the irradiated light beam, and an electro-optic element is disposed above the TFT array substrate 10 with a gap therebetween.
  • TFT array substrate by irradiating light from the top of the electro-optic element and detecting the optical change received by the light reflected by the reflective film of the electro-optic element by the electric field between the TFT array substrate 10 and the electro-optic element
  • the TFT array substrate inspection device that inspects 10 includes a transistor property change device that changes the transistor characteristics of the silicon that constitutes the TFT array substrate 10, and the TFT array substrate 10 in a state in which the transistor properties have changed and the electric light An optical change of light received by an electric field between the optical elements is detected.
  • the first embodiment of the transistor characteristic changing device can be an electromagnetic wave irradiation device that irradiates the TFT array substrate 10 with electromagnetic waves.
  • the transistor characteristics are changed to the silicon constituting the TFT array substrate 10 and received by the electric field between the TFT array substrate 10 and the electro-optic element in this state Detect optical changes in light.
  • the electromagnetic wave irradiation device can be a visible light irradiation device that irradiates light in the visible light region.
  • the optical change of the light received by the electric field between the TFT array substrate 10 irradiated with visible light and the electro-optic element is detected.
  • infrared light, ultraviolet light, radiation, or the like can be used as the electromagnetic wave to be irradiated.
  • the second embodiment of the transistor characteristic changing device may be a heater that raises the temperature of the TFT array substrate 10.
  • the transistor characteristics of the silicon constituting the TFT array substrate 10 are changed, and the optical light received by the electric field between the TFT array substrate 10 and the electro-optic element due to this state is changed. Detect changes.
  • the array inspection of the present invention can be applied to inspection of liquid crystal array substrates and organic EL array substrates.

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Abstract

Disclosed is a drive state detecting apparatus (comprising means including an electron beam source (2) and a secondary electron detector (5), means including an electron beam source (12) and a secondary electron detector (15), means or device including a light source (22) and a light detector (25), or means or device including a light source (32) and a light detector (35)) for detecting the drive state of a transistor of a TFT array substrate (10). A TFT array substrate inspecting apparatus comprises a transistor characteristic changing device (including a visible light irradiating device (4), a heater (14), a microwave irradiating device (24) and a heater (34)) for changing the characteristics of the transistor constituting the TFT array device (10). The TFT array substrate inspecting apparatus further comprises testing devices (6, 16, 26, 36) for inspecting the drive state of the TFT array substrate (10) in the state, where the characteristics of the transistor have changed, in terms of the output of a drive state detecting device.

Description

明 細 書  Specification
TFTアレイ基板検査装置  TFT array substrate inspection system
技術分野  Technical field
[0001] 本発明は、 TFT (例えば、薄膜トランジスタアレイ)基板等の基板上に形成されたァ レイを検査する TFTアレイ基板検査装置に関する。  The present invention relates to a TFT array substrate inspection apparatus that inspects an array formed on a substrate such as a TFT (eg, thin film transistor array) substrate.
背景技術  Background art
[0002] TFTアレイ基板検査装置は、欠陥検出用信号パターンで TFTアレイ基板を駆動し 、このときの駆動状態を検出することによって欠陥位置や欠陥の種類等を検査し、 T FTアレイ全体の良否判定を行う。この TFTアレイの駆動状態の検出は、例えば、電 子ビームあるいは光を照射することによって行う方法、 TFTを流れる信号を検出する 方法等、種々の方法により行うことができる。  [0002] A TFT array substrate inspection device drives a TFT array substrate with a defect detection signal pattern and inspects the defect position, the type of defect, etc. by detecting the driving state at this time. Make a decision. The driving state of the TFT array can be detected by various methods such as a method of irradiating an electron beam or light and a method of detecting a signal flowing through the TFT.
[0003] 電子ビームを照射することによって TFTアレイを検査する装置では、例えば、電子 ビームを TFTアレイに照射することで発生する二次電子強度を検出する（例えば、特 許文献 1参照)。また、光の照射を用いた検査装置では、例えば、 TFTアレイ基板と の間に隙間を空けて電気光学素子を配置し、照射光の反射状態を検出する装置が 知られて!/ヽる（例えば、特許文献 2参照)。  [0003] In an apparatus that inspects a TFT array by irradiating an electron beam, for example, the secondary electron intensity generated by irradiating the TFT array with an electron beam is detected (for example, see Patent Document 1). In addition, in an inspection apparatus using light irradiation, for example, an apparatus that detects the reflection state of irradiated light by arranging an electro-optic element with a gap between the TFT array substrate is known! For example, see Patent Document 2).
[0004] 二次電子強度を検出する TFTアレイ基板検査装置は、 TFTアレイ基板を駆動する ことで発生する ITOの電圧の状態を、 TFTアレイ基板カゝら発生する二次電子の強度 に基づいて判定を行うものである。また、照射光の反射状態を検出する TFTアレイ基 板検査装置は、 TFTアレイ基板が発生する電界により電気光学素子の屈折率を変 化させて、この屈折率の変化を照射光の反射角等を検出することにより判定を行うも のである。  [0004] The TFT array substrate inspection device that detects the secondary electron intensity is based on the intensity of the secondary electrons generated by the TFT array substrate, based on the state of the ITO voltage generated by driving the TFT array substrate. Judgment is performed. In addition, the TFT array substrate inspection device that detects the reflected state of the irradiated light changes the refractive index of the electro-optic element by the electric field generated by the TFT array substrate, and this change in refractive index is reflected in the reflection angle of the irradiated light, etc. Judgment is made by detecting.
特許文献 1：特開 2005 - 24378号公報  Patent Document 1: Japanese Patent Laid-Open No. 2005-24378
特許文献 2：特開平 11― 271800号公報  Patent Document 2: Japanese Patent Laid-Open No. 11-271800
発明の開示  Disclosure of the invention
発明が解決しょうとする課題  Problems to be solved by the invention
[0005] TFTアレイの欠陥には様々な欠陥が存在する。例えば、結線されるべき配線が開 放状態となるオープン欠陥や、絶縁されるべき配線間が短絡状態となるショート欠陥 等がある。 There are various types of defects in TFT arrays. For example, the wiring to be connected There are open defects that become open states and short-circuit defects that cause short-circuits between wires to be insulated.
[0006] 配線が完全に開放した状態である場合や、配線間が完全に短絡した状態の場合に は、前記した二次電子の強度や、照射光の反射角度から TFTアレイの欠陥を容易 に判定することができる。  [0006] When the wiring is completely open or when the wiring is completely short-circuited, defects in the TFT array can be easily determined based on the secondary electron intensity and the reflection angle of the irradiated light. Can be determined.
[0007] し力しながら、オープン欠陥には配線が完全に開放した状態の他に切れかけの状 態が含まれ、また、ショート欠陥には配線が完全に短絡した状態の他につながりかけ の状態が含まれおり、このような不完全な欠陥はウィークリークと呼ばれる従来の検査 方法では欠陥判定が難しくなるという問題がある。  [0007] However, the open defect includes not only a state in which the wiring is completely open but also a broken state in addition to a state in which the wiring is completely open. Such an incomplete defect has a problem that it is difficult to determine the defect by a conventional inspection method called weak leak.
[0008] そこで、本発明は、上記課題を解決し、ウィークリークと呼ばれる欠陥の判定を容易 にできる TFTアレイ基板検査装置を提供することを目的とする。  Accordingly, an object of the present invention is to provide a TFT array substrate inspection apparatus that can solve the above-described problems and can easily determine a defect called weak leak.
課題を解決するための手段  Means for solving the problem
[0009] 上記目的を解決するために、本発明は、 TFTアレイ基板のトランジスタの駆動状態 を検出する駆動状態検出装置と、前記 TFTアレイ基板を構成するトランジスタの特性 を変化させるトランジスタ特性変化装置と、前記トランジスタの特性が変化した状態の 前記 TFTアレイ基板の駆動状態を前記駆動状態検出装置の出力から検査する検査 装置とを備える TFTアレイ基板検査装置としたことを特徴とする。 In order to solve the above-described object, the present invention provides a drive state detection device that detects a drive state of a transistor on a TFT array substrate, and a transistor property change device that changes the characteristics of the transistors constituting the TFT array substrate. The TFT array substrate inspection apparatus includes: an inspection apparatus that inspects the driving state of the TFT array substrate in a state where the characteristics of the transistor are changed from an output of the driving state detection apparatus.
発明の効果  The invention's effect
[0010] 本発明の TFTアレイ検査装置によれば、ウィークリークと呼ばれる欠陥の判定を容 易とすることができる。  According to the TFT array inspection apparatus of the present invention, it is possible to easily determine a defect called weak leak.
図面の簡単な説明  Brief Description of Drawings
[0011] [図 1]は、本発明の第 1の実施形態の構成例を説明するための図である。 FIG. 1 is a diagram for explaining a configuration example of a first embodiment of the present invention.
[図 2]は、本発明の二次電子検出器の一構成例を説明するための図である。  FIG. 2 is a diagram for explaining a configuration example of a secondary electron detector of the present invention.
[図 3]は、電子が持つエネルギーと、その電子がアルミ中を移動する移動距離との関 係を示す図である。  [Fig. 3] is a diagram showing the relationship between the energy of an electron and the distance traveled by the electron in aluminum.
[図 4]は、アルミの膜厚による可視光の透過率を示している。  [Fig. 4] shows the transmittance of visible light depending on the film thickness of aluminum.
[図 5]は、アルミの膜厚と電子と可視光の透過波長範囲を説明するための図である。  FIG. 5 is a diagram for explaining the film thickness of aluminum and the transmission wavelength range of electrons and visible light.
[図 6]は、本発明の第 2の実施形態の構成例を説明するための図である。 [図 7]は、本発明の第 3の実施形態の構成例を説明するための図である。 FIG. 6 is a diagram for explaining a configuration example of a second embodiment of the present invention. FIG. 7 is a diagram for explaining a configuration example of a third embodiment of the present invention.
[図 8]は、本発明の第 4の実施形態の構成例を説明するための図である。 符号の説明 FIG. 8 is a diagram for explaining a configuration example of a fourth embodiment of the present invention. Explanation of symbols
1—TFTアレイ基板検査装置 1—TFT array substrate inspection equipment
2…電子ビーム源 2 ... Electron beam source
3…電子ビーム 3 ... electron beam
4…可視光照射装置 4… Visible light irradiation device
5…二次電子検出器 5 ... Secondary electron detector
5a…光電子増倍管 5a… Photomultiplier tube
5b…ガラス基板 5b ... Glass substrate
5c…シンチレータ材 5c… Scintillator material
5d…アルミ薄膜 5d… aluminum thin film
6…検査装置 6… Inspection equipment
7…可視光 7… Visible light
8…二次電子 8 ... Secondary electrons
10..TFTアレイ基板 10. TFT array substrate
11·· *TFTアレイ基板検査装置 11 · * TFT array substrate inspection equipment
12…電子ビーム源 12 ... Electron beam source
13…電子ビーム 13 ... electron beam
14···加熱器 14 ... Heater
15···二次電子検出器 15 ... Secondary electron detector
16…検査装置 16 ... Inspection equipment
18···二次電子 18 ... Secondary electrons
21·· *TFTアレイ基板検査装置  21 ... TFT array substrate inspection equipment
22···光源 22 ... Light source
23…光 23 ... light
24…電磁波照射装置  24… Electromagnetic wave irradiation device
25…光検出器 26· ··検査装置 25 ... Photodetector 26 ... Inspection equipment
28· ,·光  28,, Light
29· ··電気光学素子  29 ... Electro-optic element
31 · ••TFTアレイ基板検査装置  31 · •• TFT array substrate inspection equipment
32· ,·光源  32, Light source
33· ,·光  33, Light
34· ,·加熱器  34 ·, · Heater
35· ··光検出器  35 ··· Photodetector
36· ··検査装置  36 ... Inspection equipment
38· ,·光  38, light
39· ··電気光学素子  39 ... Electro-optic element
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0013] 以下、本発明の実施の形態について図を参照しながら詳細に説明する。  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0014] 本発明の TFTアレイ検査装置の第 1, 2の実施形態は電子ビームを照射して得ら れる二次電子を検出する形態である。また、本発明の TFTアレイ検査装置の第 3, 4 の実施形態は電気光学素子による光の光学的変化を検出する形態である。  The first and second embodiments of the TFT array inspection apparatus of the present invention are forms for detecting secondary electrons obtained by irradiating an electron beam. In addition, the third and fourth embodiments of the TFT array inspection apparatus of the present invention are forms for detecting an optical change of light by an electro-optic element.
[0015] これらの実施形態において、第 1, 3の実施形態は可視光等の電磁波を TFTアレイ 基板 10に照射することによってシリコンのトランジスタ特性を変化させる構成である。 また、第 2, 4の実施形態は加熱器 (加熱手段)で TFTアレイ基板 10を加熱すること によってシリコンのトランジスタ特性を変化させる構成である。  In these embodiments, the first and third embodiments are configured to change the transistor characteristics of silicon by irradiating the TFT array substrate 10 with electromagnetic waves such as visible light. In the second and fourth embodiments, the transistor characteristics of silicon are changed by heating the TFT array substrate 10 with a heater (heating means).
[0016] はじめに、本発明の第 1の実施形態の構成例について図 1を用いて説明する。図 1 において、 TFTアレイ基板検査装置 1は、 TFTアレイ基板 10に向けて電子ビーム 3 を照射する電子ビーム源 2と、電子ビーム 3の照射によって TFTアレイ基板 10から放 出される二次電子 8を検出してトランジスタ駆動状態を検出する二次電子検出器 (二 次電子検出手段） 5と、二次電子検出器 5で検出した二次電子の強度信号に基づい て、 TFTアレイの欠陥等の検査を行う検査装置 6とを備えて 、る。  First, a configuration example of the first embodiment of the present invention will be described with reference to FIG. In FIG. 1, a TFT array substrate inspection apparatus 1 includes an electron beam source 2 that irradiates an electron beam 3 toward the TFT array substrate 10 and secondary electrons 8 emitted from the TFT array substrate 10 by the irradiation of the electron beam 3. Detection of TFT array defects based on secondary electron detector (secondary electron detection means) 5 that detects the transistor drive state by detection and secondary electron intensity signal detected by secondary electron detector 5 And an inspection device 6 for performing the above.
[0017] TFTアレイ基板検査装置 1は、さらに、 TFTアレイ基板 10のトランジスタ特性を変 ィ匕させるトランジスタ特性変化装置をトランジスタ特性変化手段として備えて!/、る。実 施形態では、トランジスタ特性変化手段として可視光照射装置 (可視光照射手段) 4 を備えている。可視光照射装置 4は、電子ビーム 3が TFTアレイ基板 10上を照射す る電子ビーム照射領域に向かって可視光 7を照射する。検査装置 6は、トランジスタ 特性変化装置としての可視光照射装置 4によってトランジスタ特性を変化させた状態 で TFTアレイ基板 10の欠陥等を検査する。 The TFT array substrate inspection apparatus 1 further includes a transistor characteristic changing device that changes the transistor characteristics of the TFT array substrate 10 as transistor characteristic changing means. Fruit In the embodiment, a visible light irradiation device (visible light irradiation means) 4 is provided as the transistor characteristic changing means. The visible light irradiation device 4 irradiates the visible light 7 toward the electron beam irradiation region where the electron beam 3 irradiates the TFT array substrate 10. The inspection device 6 inspects the TFT array substrate 10 for defects or the like in a state where the transistor characteristics are changed by the visible light irradiation device 4 as the transistor characteristic changing device.
[0018] TFTアレイ基板 10が備えるシリコンのトランジスタ特性は、照射された可視光 7によ つて変化する。 [0018] The transistor characteristics of silicon included in the TFT array substrate 10 change depending on the irradiated visible light 7.
[0019] 可視光照射装置 4は、 LEDの他、白色灯を用いることができる。なお、白色灯は広 い波長範囲を有しているため、欠陥の種類による波長依存性を考慮して、波長フィル タを併用する構成とすることができる。また、 LEDを用いる構成の場合には、欠陥の 波長依存性に応じて波長を選択することができる。  The visible light irradiation device 4 can use a white light in addition to the LED. Since white lamps have a wide wavelength range, a wavelength filter can be used together in consideration of wavelength dependency depending on the type of defect. In the case of a configuration using LEDs, the wavelength can be selected according to the wavelength dependency of the defect.
[0020] 例えば、 a— Si (アモルファスシリコン）型の TFTのドレイン電流対ゲート電圧特性（ト ランスファ特性）は、オン電流とオフ電流の比率は 7桁以上となる。また、 a— Siは、光 導電度が大きいため、光が照射されると大きな光電界効果が現れる。この光電界効 果により、例えば、 2000kの白色光を TFTに照射した場合、オフ電流は電流比で 2桁 以上大きくなる。  [0020] For example, the drain current versus gate voltage characteristics (transfer characteristics) of an a-Si (amorphous silicon) TFT have a ratio of on-state current to off-state current of 7 digits or more. Moreover, since a-Si has a high photoconductivity, a large optical electric field effect appears when irradiated with light. For example, when the TFT is irradiated with 2000k white light due to this optical electric field effect, the off-state current increases by two orders of magnitude or more.
[0021] 本発明の TFTアレイ基板検査装置 1は、この光照射による光電界効果によって、欠 陥によって生じる弱いオフ電流リークを増大させることでリークを強調し、欠陥検査を 容易とする。  [0021] The TFT array substrate inspection apparatus 1 of the present invention enhances the leak by increasing the weak off-current leak caused by the defect due to the optical electric field effect by this light irradiation, and facilitates the defect inspection.
[0022] 欠陥のない部分のオフ電流も増大されるが、欠陥部分と正常部分のオフ電流は、 欠陥部分ほどより強調されて増大する。  [0022] Although the off-current of the part having no defect is also increased, the off-current of the defective part and the normal part is more emphasized and increased as the defective part.
[0023] このオフ電流の変化に応じて TFTアレイ基板 10の電圧が変化するため、本発明の TFTアレイ基板検査装置は、この電圧に応じて放出される二次電子を二次電子検 出器 5で検出する。検出される二次電子の強度は、欠陥部分と正常部分とで強調さ れて検出されることになるため、ウィークリークと呼ばれる不完全な欠陥であっても良 好に識別して欠陥検査を行うことができる。  [0023] Since the voltage of the TFT array substrate 10 changes in accordance with the change in the off-current, the TFT array substrate inspection device of the present invention converts the secondary electrons emitted in accordance with the voltage to a secondary electron detector. Detect with 5. The intensity of the detected secondary electrons is emphasized and detected in the defective part and the normal part, so even incomplete defects called weak leaks are well identified for defect inspection. It can be carried out.
[0024] なお、ここでは、 a— Si (アモルファスシリコン）型の TFTを例としている力 p— Si (ポ リシリコン）型の TFTや c Si (単結晶シリコン）型の TFTの場合にお!、ても、 a— Si型 の TFTと同様とすることができる。また、照射する電磁波の波長は、そのシリコンの特 性に応じた波長を選択する。 [0024] It should be noted that here, in the case of force p-Si (polysilicon) type TFT and cSi (single crystal silicon) type TFT, which is an example of a-Si (amorphous silicon) TFT! Even a-Si type It can be similar to TFT. The wavelength of the electromagnetic wave to be irradiated is selected according to the characteristics of the silicon.
[0025] 図 1に示す構成例において、二次電子検出器 5には、二次電子 8と共に、可視光照 射装置 4から直接、あるいは TFTアレイ基板 10や検査装置内の壁面で反射すること によって、可視光 7が入射する場合がある。  In the configuration example shown in FIG. 1, the secondary electron detector 5 is reflected by the secondary electron 8 directly from the visible light irradiation device 4 or by reflection on the TFT array substrate 10 or a wall surface in the inspection device. Visible light 7 may enter.
[0026] 通常、 SEM等の機能を備える二次電子検出装置では、二次電子検出器として電 子を光に変換するシンチレータと、光を電気信号に変換する光電子倍増管等の光電 変換装置 (光電変換手段)を用いた構成であるため、検出対象である二次電子以外 の光についても反応する。そのため、本発明の TFTアレイ基板検査装置において、 検査対象の TFTアレイ基板 10に対して光を照射すると、この光がノイズ成分として二 次電子検出時に混入し、正常な二次電子検出に支障が生じることになる。  [0026] Usually, in a secondary electron detector having a function such as SEM, a scintillator that converts an electron into light as a secondary electron detector, and a photoelectric converter such as a photomultiplier tube that converts light into an electric signal ( Since it is a configuration using a photoelectric conversion means), it reacts also with light other than secondary electrons that are detection targets. Therefore, in the TFT array substrate inspection apparatus of the present invention, when light is irradiated to the TFT array substrate 10 to be inspected, this light is mixed as a noise component during secondary electron detection, which hinders normal secondary electron detection. Will occur.
[0027] これを防ぐために、二次電子検出器 5のシンチレータの表面にアルミのコーティング を施し、このアルミによって光を遮蔽し、検出すべき二次電子のみを貫通 (透過）させ る。  In order to prevent this, the surface of the scintillator of the secondary electron detector 5 is coated with aluminum, light is shielded by the aluminum, and only the secondary electrons to be detected are penetrated (transmitted).
[0028] 図 2は、二次電子検出器 5の一構成例を説明するための図である。図 2において、 二次電子検出器 5は、光電子増倍管 5aの光入射側にガラス基板 5bを有する。また、 このガラス基板 5bの外表面には Csl等のシンチレータ材 5cが設けられて!/、る。この光 電子増倍管 5aとガラス基板 5b及びシンチレータ材 5cを有する構成は通常の二次電 子検出器と同じである。この構成にカ卩えて二次電子検出器 5は、シンチレータ材 5cの 表面側にスパッタリング等によって蒸着させたアルミ薄膜 5dを有する。  FIG. 2 is a diagram for explaining a configuration example of the secondary electron detector 5. In FIG. 2, the secondary electron detector 5 has a glass substrate 5b on the light incident side of the photomultiplier tube 5a. A scintillator material 5c such as Csl is provided on the outer surface of the glass substrate 5b. The configuration including the photomultiplier tube 5a, the glass substrate 5b, and the scintillator material 5c is the same as that of a normal secondary electron detector. In addition to this configuration, the secondary electron detector 5 has an aluminum thin film 5d deposited on the surface side of the scintillator material 5c by sputtering or the like.
[0029] なお、光を電気信号に変換する装置としては、光電子増倍管 5aの他に、 CCDィメ ージセンサや MOS型イメージセンサ等の半導体光電変換素子を用いても良い。  [0029] As a device for converting light into an electrical signal, a semiconductor photoelectric conversion element such as a CCD image sensor or a MOS image sensor may be used in addition to the photomultiplier tube 5a.
[0030] 可視光 7と二次電子 8が二次電子検出器 5のアルミ薄膜 5dに入射すると、可視光 7 はアルミ薄膜 5dによって遮蔽され、二次電子 8のみがアルミ薄膜 5dを通過してシン チレータ材 5cに到達する。そして、この二次電子 8はシンチレータ材 5cによって光に 変換される。この変換された光は光電子増倍管 5aによって電気信号に変換され、検 查装置に送られる。  [0030] When visible light 7 and secondary electrons 8 are incident on aluminum thin film 5d of secondary electron detector 5, visible light 7 is shielded by aluminum thin film 5d, and only secondary electrons 8 pass through aluminum thin film 5d. Reach scintillator material 5c. The secondary electrons 8 are converted into light by the scintillator material 5c. This converted light is converted into an electric signal by the photomultiplier tube 5a and sent to a detection device.
[0031] 以下、図 3,図 4を用いてアルミ膜厚と電子エネルギーとの関係を説明する。図 3は 、電子が持つエネルギーと、その電子がアルミ中を移動する移動距離との関係を示し ている。なお、二次電子のエネルギーは数 eVである力 シンチレ一タには数 kV〜10k Vの正電圧を印加するため、二次電子は加速され、シンチレ一タには高い電圧ネル ギ一で入射する。 Hereinafter, the relationship between the aluminum film thickness and the electron energy will be described with reference to FIGS. Figure 3 This shows the relationship between the energy of electrons and the distance traveled by the electrons in aluminum. The energy of the secondary electrons is a force of several eV. Since a positive voltage of several kV to 10 kV is applied to the scintillator, the secondary electrons are accelerated and incident on the scintillator at a high voltage energy. To do.
[0032] 図 3力 、 10eVのエネルギーを持つ電子のアルミ中の移動距離は 0.16mg/cm2であ る。一方、アルミの比重は 27000mg/cm3であるので、 6000A ( = 0.16mg/cm2Z27000 mg/cmノでめる。 [0032] In FIG. 3, the moving distance of electrons having an energy of 10 eV in aluminum is 0.16 mg / cm 2 . On the other hand, since the specific gravity of aluminum is 27000 mg / cm 3 , 6000A (= 0.16 mg / cm 2 Z27000 mg / cm) is required.
[0033] したがって、二次電子が 10kVで加速されたときには 6000 Aのアルミ膜厚で遮蔽す ることがでさる。  Therefore, when secondary electrons are accelerated at 10 kV, they can be shielded with an aluminum film thickness of 6000 A.
[0034] 図 4は、 λ =6500 A及びえ =2200 Aの光において、アルミの膜厚による透過率を 示している。 λ =6500Aは可視光の赤の長波長に相当し、 λ =2200Αは可視光の 青の短波長に相当する。図 4から、可視光の領域では、 400 Αのアルミ膜厚で遮蔽す ることがでさる。  [0034] FIG. 4 shows the transmittance according to the film thickness of aluminum in the light of λ = 6500A and = 2200A. λ = 6500A corresponds to the long red wavelength of visible light, and λ = 2200Α corresponds to the short blue wavelength of visible light. From Fig. 4, it is possible to shield with 400 mm of aluminum film thickness in the visible light region.
[0035] 図 5は上記したアルミ膜厚の関係を示しており、図 5 (a)は可視光の透過と非透過の アルミ膜厚の境界を示し、図 5 (b)は二次電子の透過と非透過のアルミ膜厚の境界を 示し、図 5 (c)は図 5 (a)と図 5 (b)を組み合わせた、可視光を通さず二次電子を通す アルミ膜厚の範囲を示している。したがって、アルミ膜厚を 400A〜6000Aの範囲とす ることで、可視光を遮蔽し、かつ二次電子をシンチレータに通すことができる。  [0035] Fig. 5 shows the relationship between the aluminum film thickness described above, Fig. 5 (a) shows the boundary between the visible light transmission and non-transmission aluminum film thickness, and Fig. 5 (b) shows the secondary electrons. Fig. 5 (c) shows the boundary between the transparent and non-transmissive aluminum film thickness.Figure 5 (c) shows the range of the aluminum film thickness that allows the passage of secondary electrons without passing visible light, combining Figure 5 (a) and Figure 5 (b). Show. Therefore, by setting the aluminum film thickness in the range of 400A to 6000A, it is possible to shield visible light and allow secondary electrons to pass through the scintillator.
[0036] 本発明の第 2の実施形態の構成例について図 6を用いて説明する。図 6において、 TFTアレイ基板検査装置 11は、 TFTアレイ基板 10に向けて電子ビーム 13を照射す る電子ビーム源 12と、電子ビーム 13の照射によって TFTアレイ基板 10から放出され る二次電子 18を検出する二次電子検出器 15と、二次電子検出器 15で検出した二 次電子の強度信号に基づいて、 TFTアレイの欠陥等の検査を行う検査装置 16と、ト ランジスタ特性変化装置としての加熱器 (加熱手段である加熱装置） 14を備える。こ の加熱器 14は、 TFTアレイ基板 10を所定温度に加熱する。しカゝも、この加熱器 14 には、シースヒータやランプを用いることができる。  A configuration example of the second embodiment of the present invention will be described with reference to FIG. In FIG. 6, the TFT array substrate inspection apparatus 11 includes an electron beam source 12 that irradiates the electron beam 13 toward the TFT array substrate 10 and secondary electrons emitted from the TFT array substrate 10 by the irradiation of the electron beam 13. As a secondary electron detector 15 for detecting defects, an inspection device 16 for inspecting defects of the TFT array based on the secondary electron intensity signal detected by the secondary electron detector 15, and a transistor characteristic changing device. The heater (heating device which is a heating means) 14 is provided. The heater 14 heats the TFT array substrate 10 to a predetermined temperature. In addition, a sheath heater or a lamp can be used for the heater 14.
[0037] この加熱器 14にランプを用いて、このランプにより TFTアレイ基板 10を加熱する場 合には、 TFTアレイ基板 10の温度に斑が発生するおそれがある。しかし、このランプ により TFTアレイ基板 10を所定温度に加熱する構成と、前記した光照射の構成とを 併用することができる。また、加熱温度は、欠陥の波長依存性に応じて設定すること ができる。 [0037] When a lamp is used for the heater 14 and the TFT array substrate 10 is heated by the lamp, there is a possibility that spots are generated in the temperature of the TFT array substrate 10. But this lamp Thus, the configuration in which the TFT array substrate 10 is heated to a predetermined temperature and the above-described configuration of light irradiation can be used in combination. The heating temperature can be set according to the wavelength dependency of the defect.
[0038] 本発明の第 3の実施形態の構成例について図 7を用いて説明する。図 7において、 TFTアレイ基板検査装置 21は、 TFTアレイ基板 10に向けて光 23を照射する光源 2 2と、 TFTアレイ基板 10との間にわずかな隙間を空けて配置する電気光学素子 29と 、電気光学素子 29が有した反射面で反射された光 28を検出する光検出器 25とを備 えている。また、 TFTアレイ基板検査装置 21は、光検出器 25で検出した光の強度信 号に基づ 、て TFTアレイの欠陥等の検査を行う検査装置 26と、電磁波照射手段で あるトランジスタ特性変化装置としての電磁波照射装置 (電磁波照射手段) 24を備え る。この電磁波照射装置 24は、前記第 1の実施形態で示した白色灯や LED等の可 視光照射装置 (可視光照射手段)とすることができる。  A configuration example of the third embodiment of the present invention will be described with reference to FIG. In FIG. 7, the TFT array substrate inspection apparatus 21 includes a light source 22 that emits light 23 toward the TFT array substrate 10, and an electro-optic element 29 that is disposed with a slight gap between the TFT array substrate 10 and And an optical detector 25 for detecting the light 28 reflected by the reflecting surface of the electro-optic element 29. The TFT array substrate inspection apparatus 21 includes an inspection apparatus 26 that inspects defects of the TFT array based on the light intensity signal detected by the photodetector 25, and a transistor characteristic change apparatus that is an electromagnetic wave irradiation means. As an electromagnetic wave irradiation device (electromagnetic wave irradiation means) 24. The electromagnetic wave irradiation device 24 can be a visible light irradiation device (visible light irradiation means) such as a white light or LED shown in the first embodiment.
[0039] また、電磁波照射装置 24は、光 23が TFTアレイ基板 10上を照射する照射領域に 向かって可視光等の電磁波 27を照射する。  In addition, the electromagnetic wave irradiation device 24 irradiates an electromagnetic wave 27 such as visible light toward an irradiation region where the light 23 irradiates the TFT array substrate 10.
[0040] TFTアレイ基板 10が備えるシリコンのトランジスタ特性は、照射された電磁波 27に よって変化する。  [0040] The transistor characteristics of silicon included in the TFT array substrate 10 vary depending on the electromagnetic wave 27 irradiated.
[0041] このトランジスタ特性の変化により、 TFTアレイ基板 10上の電圧分布が変化して、 電気光学素子 29に印加される電界も変化する。電気光学素子 29に印加される電界 が変化すると、電気光学素子 29の屈折率が変化し、電気光学素子 29の反射面で反 射した光 23の出射方向が変わる。この光 23の出射方向の変化は光検出器 25の検 出強度変化として検出され、これによつて欠陥検査を行うことができる。  Due to this change in transistor characteristics, the voltage distribution on the TFT array substrate 10 changes, and the electric field applied to the electro-optic element 29 also changes. When the electric field applied to the electro-optic element 29 changes, the refractive index of the electro-optic element 29 changes, and the emission direction of the light 23 reflected by the reflecting surface of the electro-optic element 29 changes. This change in the emission direction of the light 23 is detected as a change in the detection intensity of the light detector 25, and thus a defect inspection can be performed.
[0042] また、 TFTアレイ基板 10に電磁波 27を照射することによって、欠陥による電圧分布 のずれが強調され、欠陥の識別が容易となる。  In addition, by irradiating the TFT array substrate 10 with the electromagnetic wave 27, the voltage distribution shift due to the defect is emphasized, and the defect can be easily identified.
[0043] 本発明の第 4の実施形態の構成例について図 8を用いて説明する。図 8において、 TFTアレイ基板検査装置 31は、 TFTアレイ基板 10に向けて光 33を照射する光源 3 2と、 TFTアレイ基板 10との間にわずかな隙間を空けて配置する電気光学素子 39と 、電気光学素子 39が有した反射面で反射された光 38を検出する光検出器 35を備 えている。また、 TFTアレイ基板検査装置 31は、光検出器 35で検出した光の強度信 号に基づ 、て TFTアレイの欠陥等の検査を行う検査装置 36と、トランジスタ特性変 化装置としての加熱器 (加熱手段である加熱装置） 34を備える。この加熱器 34は、 T FTアレイ基板 10を所定温度に加熱するようになっている。し力も、この加熱器 34に は、シーズヒータやランプを用いることができる。 A configuration example of the fourth embodiment of the present invention will be described with reference to FIG. In FIG. 8, a TFT array substrate inspection apparatus 31 includes a light source 32 that emits light 33 toward the TFT array substrate 10 and an electro-optic element 39 that is disposed with a slight gap between the TFT array substrate 10 and The light detector 35 detects the light 38 reflected by the reflecting surface of the electro-optic element 39. In addition, the TFT array substrate inspection device 31 is used to detect the intensity of light detected by the photodetector 35. The inspection device 36 for inspecting the TFT array for defects and the like, and a heater (heating device as a heating means) 34 as a transistor characteristic changing device are provided. The heater 34 heats the TFT array substrate 10 to a predetermined temperature. For this reason, a sheathed heater or a lamp can be used for the heater 34.
[0044] また、 TFTアレイ基板 10が備えるシリコンのトランジスタ特性は、加熱温度によって 変化する。 In addition, the transistor characteristics of silicon included in the TFT array substrate 10 vary depending on the heating temperature.
[0045] この加熱によるトランジスタ特性の変化により、 TFTアレイ基板 10上の電圧分布が 変化して電気光学素子 39に印加される電界も変化し、電界により電気光学素子 39 の屈折率が変化し、電気光学素子 39の反射面で反射した光 38の出射方向が変わ る。この光 38の出射方向の変化は光検出器 35の検出強度変化として検出され、こ れによって欠陥検査を行うことができる。  Due to the change in transistor characteristics due to this heating, the voltage distribution on the TFT array substrate 10 changes and the electric field applied to the electro-optic element 39 also changes, and the refractive index of the electro-optic element 39 changes due to the electric field, The emission direction of the light 38 reflected by the reflecting surface of the electro-optic element 39 changes. This change in the emission direction of the light 38 is detected as a change in the detection intensity of the light detector 35, whereby a defect inspection can be performed.
[0046] また、 TFTアレイ基板 10に加熱器 34で高温とすることによって、欠陥による電圧分 布のずれが強調され、欠陥の識別が容易となる。  [0046] Further, when the TFT array substrate 10 is heated to a high temperature by the heater 34, the deviation of the voltage distribution due to the defect is emphasized, and the defect can be easily identified.
[0047] 以上説明したように、この発明の実施の形態の TFTアレイ基板検査装置は、 TFT アレイ基板 10のトランジスタの駆動状態を検出する駆動状態検出装置 (例えば、電 子ビーム源 2と二次電子検出器 5を備える手段、又は電子ビーム源 12と二次電子検 出器 15を備える手段、若しくは光源 22と光検出器 25を備える手段、或いは光源 32 と光検出器 35を備える手段）を備えている。また、 TFTアレイ基板検査装置は、前記 TFTアレイ基板 10を構成するトランジスタの特性を変化させるトランジスタ特性変化 装置 (可視光照射装置 4,加熱器 14,電磁波照射装置 24,加熱器 34)を備えている 。更に、 TFTアレイ基板検査装置は、前記トランジスタの特性が変化した状態の前記 TFTアレイ基板 10の駆動状態を前記駆動状態検出装置の出力から検査する検査 装置（6, 16, 26, 36)を備えている。  [0047] As described above, the TFT array substrate inspection apparatus according to the embodiment of the present invention is a drive state detection device (for example, the electron beam source 2 and the secondary) that detects the drive state of the transistors of the TFT array substrate 10. Means comprising an electron detector 5, or means comprising an electron beam source 12 and a secondary electron detector 15, or means comprising a light source 22 and a light detector 25, or means comprising a light source 32 and a light detector 35). I have. In addition, the TFT array substrate inspection apparatus includes a transistor characteristic changing device (visible light irradiation device 4, heater 14, electromagnetic wave irradiation device 24, heater 34) that changes the characteristics of the transistors constituting the TFT array substrate 10. Yes. Further, the TFT array substrate inspection device includes an inspection device (6, 16, 26, 36) for inspecting the driving state of the TFT array substrate 10 in a state where the characteristics of the transistor have changed from the output of the driving state detection device. ing.
[0048] この構成の TFTアレイ検査装置によれば、ウィークリークと呼ばれる欠陥の判定を 容易とすることができる。  [0048] According to the TFT array inspection apparatus having this configuration, it is possible to easily determine a defect called weak leak.
[0049] また、この発明の実施の形態の TFTアレイ基板検査装置の前記駆動状態検出装 置は、電子ビームを前記 TFTアレイ基板 10に照射するビーム照射装置 (電子ビーム 源 2、 12)と、当該電子ビーム照射により発生する二次電子の強度を検出して前記検 查装置 (6, 16)に入力する二次電子検出器 (5、 15)を備えている。 [0049] Further, the drive state detection device of the TFT array substrate inspection device according to the embodiment of the present invention includes a beam irradiation device (electron beam sources 2 and 12) for irradiating the TFT array substrate 10 with an electron beam, The intensity of secondary electrons generated by the electron beam irradiation is detected and the detection is performed. A secondary electron detector (5, 15) is input to the dredge device (6, 16).
[0050] この構成の TFTアレイ検査装置によれば、電子ビームの照射により TFTアレイ基 板 10から発生する二次電子の強度を検出することで、ウィークリークと呼ばれる欠陥 の判定を容易とすることができる。  [0050] According to the TFT array inspection apparatus having this configuration, it is possible to easily determine a defect called weak leak by detecting the intensity of secondary electrons generated from the TFT array substrate 10 by irradiation of an electron beam. Can do.
[0051] 更に、この発明の実施の形態の TFTアレイ基板検査装置の前記駆動状態検出装 置は、前記 TFTアレイ基板 10の上部に間隔を開けて配置された電気光学素子（29 , 39)と、前記電気光学素子 (29, 39)に上部から光を照射する光照射装置 (光源 2 2, 32)と、前記電気光学素子（29, 39)の反射膜で反射される前記光が TFTアレイ 基板 10と電気光学素子（29, 39)との間の電場により受ける光学的変化を検出して 検出出力を前記検査装置（26, 36)に入力する光検出器 (25, 35)を備えている。  Furthermore, the drive state detection device of the TFT array substrate inspection device according to the embodiment of the present invention includes an electro-optic element (29, 39) disposed above the TFT array substrate 10 with a gap therebetween. A light irradiating device (light sources 2 32) for irradiating light onto the electro-optic element (29, 39) from above; and the light reflected by the reflective film of the electro-optic element (29, 39) is a TFT array A photodetector (25, 35) for detecting an optical change received by an electric field between the substrate 10 and the electro-optic element (29, 39) and inputting a detection output to the inspection device (26, 36); Yes.
[0052] この構成の TFTアレイ検査装置によれば、電気光学素子（29, 39)の反射膜で反 射される光の光学的変化を検出することにより、ウィークリークと呼ばれる欠陥の判定 を容易とすることができる。  [0052] According to the TFT array inspection apparatus having this configuration, it is possible to easily determine a defect called weak leak by detecting an optical change of light reflected by the reflection film of the electro-optic element (29, 39). It can be.
[0053] 更に、この発明の実施の形態の TFTアレイ基板検査装置では、 TFTアレイ基板 10 を構成するシリコンのトランジスタ特性を、通常の TFTアレイ基板 10を駆動するときの 状態から変化させ、このトランジスタ特性を変化させた状態で、 TFTアレイ基板 10を 検査することによって、ウィークリークと呼ばれる欠陥の判定を容易としている。  Further, in the TFT array substrate inspection apparatus according to the embodiment of the present invention, the transistor characteristics of silicon constituting the TFT array substrate 10 are changed from the state when the normal TFT array substrate 10 is driven, and this transistor By inspecting the TFT array substrate 10 with the characteristics changed, it is possible to easily determine a defect called weak leak.
[0054] 例えば、シリコンに電磁波を照射したり、熱をカ卩えると、シリコンのトランジスタ特性は 、通常状態から変化する。また、シリコンは光電界効果が大きいという特性を備えて おり、可視光領域の光を照射すると、オフ電流が増大する。本発明の一態様では、こ の特性を利用し、可視光領域の光を照射しない状態では弱いオフ電流リークを生じ る欠陥に対して、可視光領域の光を照射することでオフ電流を増大させ、これによつ てリークを強調させる。これによつて、ウィークリークと呼ばれる欠陥についても容易に 欠陥検出を行うことができる。  For example, when silicon is irradiated with electromagnetic waves or heat is applied, the transistor characteristics of silicon change from the normal state. In addition, silicon has a characteristic that the optical electric field effect is large, and the off-current increases when irradiated with light in the visible light region. In one embodiment of the present invention, this property is used to increase off-current by irradiating light in the visible light region with respect to defects that cause weak off-current leakage in a state where light in the visible light region is not irradiated. This enhances the leak. As a result, it is possible to easily detect a defect called a weak leak.
[0055] また、上述したように TFTアレイ基板検査装置は、 TFTアレイ基板 10を検査する T FTアレイ基板検査装置において、 TFTアレイ基板 10を構成するシリコンのトランジス タ特性を変化させるトランジスタ特性変化装置を備えた構成とする。このトランジスタ 特性変化装置により、 TFTアレイ基板 10を構成するシリコンのトランジスタ特性を変 化させ、このトランジスタ特性が変化した状態の TFTアレイ基板 10を検査する。 Further, as described above, the TFT array substrate inspection apparatus is a transistor characteristic changing apparatus that changes the transistor characteristics of silicon constituting the TFT array substrate 10 in the TFT array substrate inspection apparatus that inspects the TFT array substrate 10. It is set as the structure provided with. This transistor characteristic change device changes the transistor characteristics of the silicon that constitutes the TFT array substrate 10. The TFT array substrate 10 in which the transistor characteristics are changed is inspected.
[0056] 更に、上述したように TFTアレイ基板検査装置の第 1の態様は、電子ビームを TFT アレイ基板 10に照射し、この電子ビーム照射により発生する二次電子の強度を二次 電子検出器で検出し、この二次電子強度によって TFTアレイ基板 10を検査する TF Tアレイ基板検査装置において、 TFTアレイ基板 10を構成するシリコンのトランジス タ特性を変化させるトランジスタ特性変化装置を備え、トランジスタ特性が変化した状 態の TFTアレイ基板 10に電子ビームを照射して得られる二次電子の強度を検出す る。 Furthermore, as described above, the first aspect of the TFT array substrate inspection apparatus irradiates the TFT array substrate 10 with an electron beam, and determines the intensity of secondary electrons generated by the electron beam irradiation as a secondary electron detector. The TFT array substrate inspection device that inspects the TFT array substrate 10 with this secondary electron intensity is equipped with a transistor characteristic changing device that changes the transistor characteristics of the silicon that constitutes the TFT array substrate 10, and the transistor characteristics are The intensity of the secondary electrons obtained by irradiating the electron beam to the TFT array substrate 10 in the changed state is detected.
[0057] トランジスタ特性変化装置の第 1の形態として、 TFTアレイ基板 10に電磁波を照射 する電磁波照射装置とすることができる。電磁波照射装置は、電磁波を TFTアレイ 基板 10に照射することで TFTアレイ基板 10を構成するシリコンにトランジスタ特性を 変化させ、このときの TFTアレイ基板 10から発生する二次電子強度を検出する。  As a first form of the transistor characteristic changing device, an electromagnetic wave irradiation device that irradiates the TFT array substrate 10 with electromagnetic waves can be used. The electromagnetic wave irradiation device changes the transistor characteristics to silicon constituting the TFT array substrate 10 by irradiating the TFT array substrate 10 with electromagnetic waves, and detects the intensity of secondary electrons generated from the TFT array substrate 10 at this time.
[0058] 電磁波照射装置は可視光領域の光を照射する可視光照射装置とする。可視光照 射装置から TFTアレイ基板 10に可視光を照射することで、 TFTアレイ基板 10を構成 するシリコンのオフ電流を増大させ、 TFTアレイ基板 10から発生する二次電子強度 を検出する。照射する電磁波は、可視光領域の光の他に、赤外光、紫外光、放射線 等を用いることができる。  The electromagnetic wave irradiation device is a visible light irradiation device that emits light in the visible light region. By irradiating the TFT array substrate 10 with visible light from the visible light irradiation device, the off-state current of the silicon constituting the TFT array substrate 10 is increased, and the secondary electron intensity generated from the TFT array substrate 10 is detected. As the electromagnetic wave to be irradiated, infrared light, ultraviolet light, radiation, or the like can be used in addition to light in the visible light region.
[0059] トランジスタ特性変化装置の第 2の形態として、 TFTアレイ基板 10の温度を上昇さ せる加熱器とすることができる。加熱器は、 TFTアレイ基板 10を加熱することで、 TF Tアレイ基板 10を構成するシリコンにトランジスタ特性を変化させ、このときの TFTァ レイ基板 10から発生する二次電子強度を検出する。  [0059] As a second embodiment of the transistor characteristic changing device, a heater that raises the temperature of the TFT array substrate 10 can be used. The heater changes the transistor characteristics to silicon constituting the TFT array substrate 10 by heating the TFT array substrate 10, and detects the secondary electron intensity generated from the TFT array substrate 10 at this time.
[0060] 本発明の TFTアレイ基板検査装置の第 2の態様は、照射した光ビームの反射を検 出するものであり、 TFTアレイ基板 10の上部に間隔を開けて電気光学素子を配置し 、電気光学素子の上部から光を照射し、 TFTアレイ基板 10と電気光学素子との間の 電場によって、電気光学素子の反射膜で反射される光が受ける光学的変化を検出 することによって TFTアレイ基板 10を検査する TFTアレイ基板検査装置において、 TFTアレイ基板 10を構成するシリコンのトランジスタ特性を変化させるトランジスタ特 性変化装置を備え、トランジスタ特性が変化した状態の TFTアレイ基板 10と電気光 学素子との間の電場により受ける光の光学的変化を検出する。 [0060] A second aspect of the TFT array substrate inspection apparatus of the present invention is to detect the reflection of the irradiated light beam, and an electro-optic element is disposed above the TFT array substrate 10 with a gap therebetween. TFT array substrate by irradiating light from the top of the electro-optic element and detecting the optical change received by the light reflected by the reflective film of the electro-optic element by the electric field between the TFT array substrate 10 and the electro-optic element The TFT array substrate inspection device that inspects 10 includes a transistor property change device that changes the transistor characteristics of the silicon that constitutes the TFT array substrate 10, and the TFT array substrate 10 in a state in which the transistor properties have changed and the electric light An optical change of light received by an electric field between the optical elements is detected.
[0061] トランジスタ特性変化装置の第 1の形態は、 TFTアレイ基板 10に電磁波を照射する 電磁波照射装置とすることができる。電磁波照射装置によって、電磁波を TFTアレイ 基板 10に照射することで TFTアレイ基板 10を構成するシリコンにトランジスタ特性を 変化させ、この状態による TFTアレイ基板 10と電気光学素子との間の電場により受 ける光の光学的変化を検出する。  The first embodiment of the transistor characteristic changing device can be an electromagnetic wave irradiation device that irradiates the TFT array substrate 10 with electromagnetic waves. By irradiating the TFT array substrate 10 with electromagnetic waves by the electromagnetic wave irradiation device, the transistor characteristics are changed to the silicon constituting the TFT array substrate 10 and received by the electric field between the TFT array substrate 10 and the electro-optic element in this state Detect optical changes in light.
[0062] 電磁波照射装置は可視光領域の光を照射する可視光照射装置とすることができる 。可視光を照射した TFTアレイ基板 10と電気光学素子との間の電場により受ける光 の光学的変化を検出する。照射する電磁波は、可視光領域の光の他に、赤外光、紫 外光、放射線等を用いることができる。  The electromagnetic wave irradiation device can be a visible light irradiation device that irradiates light in the visible light region. The optical change of the light received by the electric field between the TFT array substrate 10 irradiated with visible light and the electro-optic element is detected. In addition to light in the visible light region, infrared light, ultraviolet light, radiation, or the like can be used as the electromagnetic wave to be irradiated.
[0063] また、トランジスタ特性変化装置の第 2の形態は、 TFTアレイ基板 10の温度を上昇 させる加熱器とすることができる。加熱器によって TFTアレイ基板 10を加熱すること で TFTアレイ基板 10を構成するシリコンのトランジスタ特性を変化させ、この状態に よる TFTアレイ基板 10と電気光学素子との間の電場により受ける光の光学的変化を 検出する。  [0063] In addition, the second embodiment of the transistor characteristic changing device may be a heater that raises the temperature of the TFT array substrate 10. By heating the TFT array substrate 10 with a heater, the transistor characteristics of the silicon constituting the TFT array substrate 10 are changed, and the optical light received by the electric field between the TFT array substrate 10 and the electro-optic element due to this state is changed. Detect changes.
[0064] 以上、本発明を例示的な実施例の観点力も説明したが、本発明はこれらの実施例 に限定されるものではない。当業者であれば、本発明の範囲または精神から逸脱す ることなく本発明の構成に対して様々な改良や変更が可能であることは容易に理解 することができる。上記記載の観点から、本発明はこの発明の改良や変更を包含す ることを意図しており、そのような改良や変更は、特許請求の範囲及びその均等物の 範囲内に含まれる。  As described above, the viewpoint power of the exemplary embodiments of the present invention has been described, but the present invention is not limited to these embodiments. One skilled in the art can readily appreciate that various modifications and changes can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the above description, the present invention is intended to cover improvements and modifications of this invention, and such improvements and modifications are included within the scope of the claims and their equivalents.
[0065] 本願は、 2005年 5月 2日に出願された日本特許出願番号 2005— 134592に基づき 優先権主張をするものであり、同出願の明細書、図面および特許請求の範囲を含む 出願内容は、すべてを参照してここに含める。  [0065] This application claims priority based on Japanese Patent Application No. 2005-134592 filed on May 2, 2005, including the specification, drawings, and claims of the application. Include everything here by reference.
産業上の利用可能性  Industrial applicability
[0066] 本発明のアレイ検査は、液晶アレイ基板や有機 ELアレイ基板の検査等に適用する ことができる。 [0066] The array inspection of the present invention can be applied to inspection of liquid crystal array substrates and organic EL array substrates.

Claims

請求の範囲 The scope of the claims
[1] TFTアレイ基板のトランジスタの駆動状態を検出する駆動状態検出装置と、  [1] a driving state detection device for detecting a driving state of a transistor on a TFT array substrate;
前記 TFTアレイ基板を構成するトランジスタの特性を変化させるトランジスタ特性変 化装置と、  A transistor characteristic changing device for changing the characteristics of the transistors constituting the TFT array substrate;
前記トランジスタの特性が変化した状態の前記 TFTアレイ基板の駆動状態を前記 検出器の出力から検査する検査装置とを備えることを特徴とする TFTアレイ基板検 查装置。  A TFT array substrate inspection device, comprising: an inspection device that inspects the driving state of the TFT array substrate in a state where the characteristics of the transistor have changed from the output of the detector.
[2] 前記駆動状態検出装置は、電子ビームを前記 TFTアレイ基板に照射するビーム照 射装置と、当該電子ビーム照射により発生する二次電子の強度を検出して前記検査 装置に入力する二次電子検出器とを備えることを特徴とする請求項 1に記載の TFT アレイ基板検査装置。  [2] The driving state detection device includes a beam irradiation device that irradiates the TFT array substrate with an electron beam, and a secondary that detects the intensity of secondary electrons generated by the electron beam irradiation and inputs the intensity to the inspection device. 2. The TFT array substrate inspection apparatus according to claim 1, further comprising an electron detector.
[3] 前記トランジスタ特性変化装置は前記 TFTアレイ基板に電磁波を照射する電磁波 照射装置であることを特徴とする請求項 2に記載の TFTアレイ基板検査装置。  3. The TFT array substrate inspection apparatus according to claim 2, wherein the transistor characteristic changing device is an electromagnetic wave irradiation device that irradiates the TFT array substrate with electromagnetic waves.
[4] 前記電磁波照射装置は可視光領域の光を照射する可視光照射装置であることを 特徴とする請求項 3に記載の TFTアレイ基板検査装置。  4. The TFT array substrate inspection apparatus according to claim 3, wherein the electromagnetic wave irradiation device is a visible light irradiation device that irradiates light in a visible light region.
[5] 前記トランジスタ特性変化装置は前記 TFTアレイ基板の温度を上昇させる加熱器 であることを特徴とする請求項 2に記載の TFTアレイ基板検査装置。  5. The TFT array substrate inspection apparatus according to claim 2, wherein the transistor characteristic changing device is a heater that raises the temperature of the TFT array substrate.
[6] 前記駆動状態検出装置は、前記 TFTアレイ基板の上部に間隔を開けて配置され た電気光学素子と、前記電気光学素子に上部から光を照射する光照射装置と、前記 電気光学素子の反射膜で反射される前記光が TFTアレイ基板と電気光学素子との 間の電場により受ける光学的変化を検出して検出出力を前記検査装置に入力する 光検出器を備えることを特徴とする請求項 1に記載の TFTアレイ基板検査装置。  [6] The drive state detection device includes: an electro-optical element disposed at an upper portion of the TFT array substrate; a light irradiation device that irradiates light to the electro-optical element from above; and the electro-optical element. A photodetector is provided that detects an optical change received by the electric field between the TFT array substrate and the electro-optic element when the light reflected by the reflective film is detected and inputs a detection output to the inspection apparatus. Item 2. The TFT array substrate inspection device according to Item 1.
[7] 前記トランジスタ特性変化装置は前記 TFTアレイ基板に電磁波を照射する電磁波 照射装置であることを特徴とする請求項 6に記載の TFTアレイ基板検査装置。  7. The TFT array substrate inspection apparatus according to claim 6, wherein the transistor characteristic changing device is an electromagnetic wave irradiation device that irradiates the TFT array substrate with electromagnetic waves.
[8] 前記電磁波照射装置は可視光領域の光を照射する可視光照射装置であることを 特徴とする請求項 7に記載の TFTアレイ基板検査装置。  8. The TFT array substrate inspection apparatus according to claim 7, wherein the electromagnetic wave irradiation device is a visible light irradiation device that irradiates light in a visible light region.
[9] 前記トランジスタ特性変化装置は TFTアレイ基板の温度を上昇させる加熱器である ことを特徴とする請求項 6に記載の TFTアレイ基板検査装置。  9. The TFT array substrate inspection apparatus according to claim 6, wherein the transistor characteristic changing device is a heater that raises the temperature of the TFT array substrate.
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