TW200639551A - Inspection device for TFT array substrate - Google Patents

Inspection device for TFT array substrate

Info

Publication number
TW200639551A
TW200639551A TW095114676A TW95114676A TW200639551A TW 200639551 A TW200639551 A TW 200639551A TW 095114676 A TW095114676 A TW 095114676A TW 95114676 A TW95114676 A TW 95114676A TW 200639551 A TW200639551 A TW 200639551A
Authority
TW
Taiwan
Prior art keywords
array substrate
tft array
inspection device
properties
transistor
Prior art date
Application number
TW095114676A
Other languages
Chinese (zh)
Other versions
TWI346829B (en
Inventor
Makoto Shinohara
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Publication of TW200639551A publication Critical patent/TW200639551A/en
Application granted granted Critical
Publication of TWI346829B publication Critical patent/TWI346829B/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136254—Checking; Testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2594—Measuring electric fields or potentials

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Thin Film Transistor (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

An inspection device for TFT array substrate is provided for easier determination of defeat that is called weak leak. The inspection device for TFT array substrate I determines the TFT array substrate by irradiating an electron beam 3 to the TFT array substrate. Meanwhile, the inspection device for TFT array substrate 1 includes a means for changing transistor properties (means for irradiating visible light 4). The properties of silicon transistor for constituting TFT array substrate 10 is changed by using the means for changing transistor properties (means for irradiating visible light 4), and the electron beam is irradiated by the TFT array substrate that the properties of transistor is changed to inspect the TFT array substrate.
TW095114676A 2005-05-02 2006-04-25 Inspection device for tft array substrate TWI346829B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005134592 2005-05-02

Publications (2)

Publication Number Publication Date
TW200639551A true TW200639551A (en) 2006-11-16
TWI346829B TWI346829B (en) 2011-08-11

Family

ID=37396374

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095114676A TWI346829B (en) 2005-05-02 2006-04-25 Inspection device for tft array substrate

Country Status (5)

Country Link
JP (1) JPWO2006120861A1 (en)
KR (1) KR100877928B1 (en)
CN (1) CN101107534B (en)
TW (1) TWI346829B (en)
WO (1) WO2006120861A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006015714B4 (en) * 2006-04-04 2019-09-05 Applied Materials Gmbh Light-assisted testing of an opto-electronic module
CN102308202B (en) * 2009-02-04 2014-07-09 株式会社岛津制作所 TFT array inspection method and TFT array inspection apparatus
CN104024837B (en) * 2011-11-02 2016-08-31 株式会社岛津制作所 Liquid crystal array inspecting apparatus and the signal processing method of liquid crystal array inspecting apparatus
CN104795339B (en) * 2015-03-09 2017-10-20 昆山龙腾光电有限公司 The detection means and detection method of thin-film transistor array base-plate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6348473A (en) * 1986-08-19 1988-03-01 Matsushita Electric Ind Co Ltd Defect picture element inspection device
US4819038A (en) * 1986-12-22 1989-04-04 Ibm Corporation TFT array for liquid crystal displays allowing in-process testing
JPH073446B2 (en) * 1988-05-18 1995-01-18 松下電器産業株式会社 Defect inspection apparatus and defect inspection method for active substrate having switching element
US5432461A (en) * 1991-06-28 1995-07-11 Photon Dynamics, Inc. Method of testing active matrix liquid crystal display substrates
US5465052A (en) * 1991-09-10 1995-11-07 Photon Dynamics, Inc. Method of testing liquid crystal display substrates
JPH08220174A (en) * 1995-02-20 1996-08-30 Matsushita Electric Ind Co Ltd Inspecting method of liquid crystal panel
JP2669385B2 (en) * 1995-03-06 1997-10-27 日本電気株式会社 Inspection method for liquid crystal thin film transistor substrate and inspection apparatus using the same
JP4104728B2 (en) * 1998-03-25 2008-06-18 フォトン・ダイナミクス・インコーポレーテッド Liquid crystal drive substrate inspection apparatus and inspection method thereof

Also Published As

Publication number Publication date
JPWO2006120861A1 (en) 2008-12-18
KR100877928B1 (en) 2009-01-12
KR20070093112A (en) 2007-09-17
CN101107534A (en) 2008-01-16
CN101107534B (en) 2012-04-25
TWI346829B (en) 2011-08-11
WO2006120861A1 (en) 2006-11-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees