WO2006076333A3 - High integrity sputtering target material and method for producing bulk quantities of same - Google Patents

High integrity sputtering target material and method for producing bulk quantities of same Download PDF

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Publication number
WO2006076333A3
WO2006076333A3 PCT/US2006/000771 US2006000771W WO2006076333A3 WO 2006076333 A3 WO2006076333 A3 WO 2006076333A3 US 2006000771 W US2006000771 W US 2006000771W WO 2006076333 A3 WO2006076333 A3 WO 2006076333A3
Authority
WO
WIPO (PCT)
Prior art keywords
rolling
sputtering target
same
target material
high integrity
Prior art date
Application number
PCT/US2006/000771
Other languages
French (fr)
Other versions
WO2006076333A2 (en
Inventor
Christopher A Michaluk
Louis E Huber Jr
P Todd Alexander
Craig M Carpenter
Original Assignee
Cabot Corp
Christopher A Michaluk
Louis E Huber Jr
P Todd Alexander
Craig M Carpenter
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp, Christopher A Michaluk, Louis E Huber Jr, P Todd Alexander, Craig M Carpenter filed Critical Cabot Corp
Publication of WO2006076333A2 publication Critical patent/WO2006076333A2/en
Publication of WO2006076333A3 publication Critical patent/WO2006076333A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A method of making a sputtering target, comprising: providing a slab comprising at least one metal; a first rolling of said slab to form an intermediate plate, wherein said first rolling includes a plurality of rolling passes; and a second rolling to form a metal plate, wherein said second rolling includes a plurality of rolling passes, and wherein each of said rolling passes of said second rolling imparts a true strain reduction of about 0. 2 or more.
PCT/US2006/000771 2005-01-14 2006-01-11 High integrity sputtering target material and method for producing bulk quantities of same WO2006076333A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/036,759 2005-01-14
US11/036,759 US20050252268A1 (en) 2003-12-22 2005-01-14 High integrity sputtering target material and method for producing bulk quantities of same

Publications (2)

Publication Number Publication Date
WO2006076333A2 WO2006076333A2 (en) 2006-07-20
WO2006076333A3 true WO2006076333A3 (en) 2006-09-28

Family

ID=36576017

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/000771 WO2006076333A2 (en) 2005-01-14 2006-01-11 High integrity sputtering target material and method for producing bulk quantities of same

Country Status (2)

Country Link
US (1) US20050252268A1 (en)
WO (1) WO2006076333A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007103309A2 (en) * 2006-03-07 2007-09-13 Cabot Corporation Methods of producing deformed metal articles
EP2415899B1 (en) * 2009-03-31 2013-11-20 JX Nippon Mining & Metals Corporation Lanthanum target for sputtering
CN103240417B (en) * 2013-05-27 2016-02-10 宁夏东方钽业股份有限公司 A kind of tantalum band and preparation method thereof
CN107466328A (en) * 2015-04-10 2017-12-12 东曹Smd有限公司 The manufacture method of tantalum spattering target and the sputtering target being made from it
CN108465700B (en) * 2018-03-13 2020-09-08 重庆大学 Tantalum plate rolling method for obtaining sputtering target material with uniform structure and texture
CN114645253B (en) * 2022-03-09 2023-09-05 先导薄膜材料(安徽)有限公司 Semiconductor tantalum target and forging method thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2037542A1 (en) * 1970-07-29 1972-02-10 Deutsche Edelstahlwerke AG, 4150Krefeld Process for reducing the longitudinal streakiness of cold-rolled strips made of rust and acid-resistant chrome steel
JP2001040470A (en) * 1999-07-30 2001-02-13 Hitachi Cable Ltd Copper target material for sputtering, and its manufacture
US6238494B1 (en) * 1997-07-11 2001-05-29 Johnson Matthey Electronics Inc. Polycrystalline, metallic sputtering target
US6264813B1 (en) * 1996-12-04 2001-07-24 Aluminum Pechiney Cathodic sputtering targets made of aluminum alloy
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US20020125128A1 (en) * 2000-02-02 2002-09-12 Honywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US20030019746A1 (en) * 2000-11-27 2003-01-30 Ford Robert B. Hollow cathode target and methods of making same
WO2005064037A2 (en) * 2003-12-22 2005-07-14 Cabot Corporation High integrity sputtering target material and method for producing bulk quantities of same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2037542A1 (en) * 1970-07-29 1972-02-10 Deutsche Edelstahlwerke AG, 4150Krefeld Process for reducing the longitudinal streakiness of cold-rolled strips made of rust and acid-resistant chrome steel
US6264813B1 (en) * 1996-12-04 2001-07-24 Aluminum Pechiney Cathodic sputtering targets made of aluminum alloy
US6238494B1 (en) * 1997-07-11 2001-05-29 Johnson Matthey Electronics Inc. Polycrystalline, metallic sputtering target
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
JP2001040470A (en) * 1999-07-30 2001-02-13 Hitachi Cable Ltd Copper target material for sputtering, and its manufacture
US20020125128A1 (en) * 2000-02-02 2002-09-12 Honywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US20030019746A1 (en) * 2000-11-27 2003-01-30 Ford Robert B. Hollow cathode target and methods of making same
WO2005064037A2 (en) * 2003-12-22 2005-07-14 Cabot Corporation High integrity sputtering target material and method for producing bulk quantities of same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 19 5 June 2001 (2001-06-05) *

Also Published As

Publication number Publication date
US20050252268A1 (en) 2005-11-17
WO2006076333A2 (en) 2006-07-20

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