WO2006053025A2 - Appareil et procede pour bloquer un phenomene transitoire dependant de la temperature - Google Patents

Appareil et procede pour bloquer un phenomene transitoire dependant de la temperature Download PDF

Info

Publication number
WO2006053025A2
WO2006053025A2 PCT/US2005/040555 US2005040555W WO2006053025A2 WO 2006053025 A2 WO2006053025 A2 WO 2006053025A2 US 2005040555 W US2005040555 W US 2005040555W WO 2006053025 A2 WO2006053025 A2 WO 2006053025A2
Authority
WO
WIPO (PCT)
Prior art keywords
temperature
depletion mode
transient
channel device
channel
Prior art date
Application number
PCT/US2005/040555
Other languages
English (en)
Other versions
WO2006053025A3 (fr
Inventor
Richard A. Harris
Stephen Coates
Francois Hebert
Original Assignee
Fultec Semiconductor, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fultec Semiconductor, Inc. filed Critical Fultec Semiconductor, Inc.
Publication of WO2006053025A2 publication Critical patent/WO2006053025A2/fr
Publication of WO2006053025A3 publication Critical patent/WO2006053025A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H02H5/044—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using a semiconductor device to sense the temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H02H5/042—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using temperature dependent resistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H02H9/025—Current limitation using field effect transistors

Definitions

  • This invention relates generally to apparatus and methods that employ a transient blocking unit (TBU) in conjunction with a temperature control unit to protect against over-voltage, over- current and over-temperature.
  • TBU transient blocking unit
  • Fuses that employ thermal or magnetic elements are one common protection measure. In other cases, protection circuits are available. Some examples are described in U.S. Pat. Nos .
  • Protection circuits are further specialized depending on conditions and application. For example, in the case of protecting batteries or rechargeable elements from overcharging and over-discharging one can refer to circuit solutions described in U.S. Pat. Nos. 5,789,900; 6,313,610; 6,331,763; 6,518,731; 6,914,416; 6,948,078; 6,958,591 and U.S. Published Application 2001/0021092.
  • thermal protection elements such as positive thermal coefficient (PTC) elements, variable resistors and transistors as well as field effect transistors (FETs) .
  • Still other protection circuits e.g., ones associated with power converters for IC circuits and devices that need to control device parameters and electric parameters simultaneously also use these elements.
  • the object of the invention is to provide an alternative protection device that is capable of simultaneous over-voltage, over-current and over- temperature protection while satisfying stringent requirements laid down by sensitive circuits.
  • the object is to provide a device that can block transients and is also capable of shutting off as a function of temperature.
  • the apparatus has a transient blocking unit (TBU) that uses at least one depletion mode n-channel device interconnected with at least one depletion mode p-channel device. The interconnection is performed such that a transient alters a bias voltage V p of the p-channel device and a bias voltage V n of the n-channel device in concert. Specifically, the bias voltages are altered such that the p-channel device and n- channel device mutually switch off to block the transient.
  • the apparatus also has a temperature control unit that is in communication with the TBU and adjusts at least one of the bias voltages V p , V n in response to a sensed temperature.
  • the temperature control unit can include an element that is connected in the TBU to adjust one or both bias voltages V p , V n .
  • the element has a switch that adjusts bias voltage by switching from closed to open-circuit condition.
  • the element is a variable circuit element such as a transistor.
  • the transistor can be connected between the p-channel device and the n-channel device.
  • the p-channel device is a junction-gate field effect transistor (PJFET) and the n-channel device is a metal-oxide-semiconductor field effect transistor (MOSFET) .
  • the PJFET and MOSFET are connected by their sources and have drain-gate interconnections.
  • the transistor of the temperature control unit is connected between the sources of the PJFET and the MOSFET.
  • the variable circuit element is a device selected from among resistors, transistors, positive temperature coefficient thermistors (PTCs) , other positive or negative temperature coefficient elements, current- limiters and diodes .
  • the element is a temperature-sensitive element and it measures the sensed temperature.
  • the sensed temperature is obtained in a local area, meaning locally to the TBU.
  • the temperature control unit has a remote temperature sensor for measuring the sensed temperature in a remote area, meaning away from the TBU itself. The choice depends on the intended application of the apparatus. Preferably, however, the apparatus is integrated. In other words, the TBU and the temperature control unit are integrated on one die or in the same package .
  • the apparatus has a TBU that uses at least two n-channel devices, e.g., MOSFETs, and a PTC that is interconnected with them. The interconnection is performed such that a transient alters a resistance of the PTC and a bias voltage V n of the n-channel devices. The effect is that the n- channel devices and the PCT mutually switch off to block the transient.
  • the apparatus in this embodiment can have a temperature control unit in communication with the TBU.
  • the temperature control unit can be connected to the PTC for performing adjustments of its temperature response or with the TBU for adjusting the bias voltage V n .
  • the PTC be placed in thermal contact with the n- channel devices .
  • the invention further extends to a method for temperature- dependent transient blocking by providing a TBU with interconnected n-channel and p-channel devices, measuring the sensed temperature and adjusting at least one of the bias voltages V p , V n in response to the sensed temperature.
  • the sensed temperature can be measured in a local area, e.g., in the TBU, or in a remote area, e.g., near the TBU where a critical temperature or over-temperature is to be monitored.
  • the sensed temperature can be measured by a temperature- sensitive element that may or may not be integrated with the apparatus .
  • the TBU is provided with at least two n-channel devices and a PTC.
  • the n-channel devices and the PTC are interconnected such that they mutually switch off to block the transient.
  • the bias voltage V n can be further adjusted in response to a sensed temperature, i.e., not only in response to the temperature sensed by the PTC.
  • the PTC needs to be placed in good thermal contact with the n-channel devices . This can be accomplished by sandwiching the PTC between them.
  • Fig. 1 is a diagram illustrating the basic principle of operation of a prior art uni-directional transient blocking unit (TBU) .
  • Fig. 2 is a diagram illustrating the basic principle of operation of a prior art bi-directional TBU.
  • Fig. 3 is a diagram of an apparatus in accordance with the invention implemented with a uni-directional TBU.
  • Fig. 4 is a diagram of an apparatus of the invention implemented with a bi-directional TBU.
  • Fig. 5 is a diagram of an apparatus employing a TBU with a PTC in accordance with the invention.
  • Fig. 6 is a diagram of a preferred embodiment of a uni ⁇ directional apparatus .
  • Fig. 7 is a diagram of a preferred embodiment of a bi ⁇ directional apparatus .
  • Fig. 8 is a diagram of another embodiment employing a uni-directional TBU and a remote temperature sensor.
  • Fig. 9 is a diagram of still another embodiment employing a bi-directional TBU and a remote temperature sensor.
  • TBUs transient blocking units
  • FIG. 1 shows a prior art TBU 10 for protecting a load 12 from voltage and/or current transients of one polarity, i.e., positive voltage spikes or surges. For this reason, TBU 10 is called uni-directional.
  • TBU 10 uses a depletion mode n-channel device 14 and a depletion mode p-channel device 16, both of which can be implemented by field effect transistors (FETs) .
  • FETs field effect transistors
  • Devices 14, 16 are interconnected to take advantage of their n-channel and p-channel biasing and resistance properties to cause mutual switch off to block the transient. More specifically, devices 14, 16 have corresponding n- and p- channels 15, 17 as well as gate G, source S and drain D terminals. Resistances R n , R p of devices 14, 16 are low when voltage differences or bias voltages V gsn and V gsp between their gate G and source S terminals are zero. Normally, TBU 10 is unblocked and devices 14, 16 act as small resistors that allow a load current Ii oad to pass to load 12.
  • TBU 20 has two n-channel devices 22, 24 and one p-channel device 26. Devices 22, 24, 26 are interconnected between their gate G, source S and drain D terminals as shown. Two current limiters 28, 30 are used to ensure appropriate routing of current between devices 22, 24, 26. Current limiters 28, 30 can be diodes, resistors, transistors, current sources or combinations thereof.
  • TBU 20 causes mutual switch off of devices 22, 24, 26 in response to a negative or positive spike by employing the principles of controlling resistances by biasing in response to transients as explained above.
  • TBUs that use p-channel devices at inputs, a larger number of n-channel or p-channel devices as well as TBUs that employ high-voltage depletion devices .
  • More detailed information about prior art TBUs and associated applications and methods can be found in published literature including, in particular, PCT/AU94/00358, PCT/AU04/00117; PCT/AU03/00175; PCT/AU03/00848 and U.S. Pat. No. 5,742,463 that are herein incorporated by reference.
  • Apparatus 100 employs a uni-directional TBU 102 that has a depletion mode device 104 with an n-channel 106 interconnected with a depletion mode device 108 with a p-channel 110.
  • the interconnection is performed source-to-source (S-S) and gate- to-drain (G-D) such that a transient alters a bias voltage V p of p-channel device 108 and a bias voltage V n of n-channel device 104 in concert.
  • bias voltages V p , V n are altered such that p- and n-channel devices 108, 104 mutually switch off to block the transient.
  • Apparatus 100 has a temperature control unit 112.
  • unit 112 has a temperature sensor 114 and an element 116 connected with TBU 102 in the S-S interconnection of devices 104, 108.
  • Temperature sensor 114 is located within TBU 102 for measuring a sensed temperature T 3 in a local area, i.e., within TBU 102, and communicating T 3 to element 116.
  • Element 116 is a variable circuit element, here a resistor, that can change its resistance value in response to a signal corresponding to T 3 from sensor 114.
  • uni-directional TBU 102 of apparatus 100 is initially driven to block positive surges by altering bias voltages V n and V p in concert such that devices 104, 108 mutually increase resistances R n , R p of n- and p-channels 106,
  • Temperature control unit 112 further adjusts bias voltages V n and V p in response to sensed temperature T 3 communicated by sensor 114.
  • the signal from sensor 114 and corresponding to T 3 changes the resistance of variable resistor
  • bias voltages V n and V p are adjusted in response to sensed temperature T 3 , as indicated by the arrows.
  • Variable resistor 116 and sensor 114 that is in series with p- channel device 108 are calibrated such that when sensed temperature T 3 is within an acceptable range the resistance of resistor 116 is negligibly small. Thus, there is no or only a negligible effect on bias voltages V n and V p . TBU 102 will only switch off in this condition when either a positive over- voltage or over-current causes mutual switch off of devices 104, 108. When sensed temperature T 3 falls outside the acceptable range, resistor 116 assumes a significant resistance value. The value is sufficiently large to cause the accelerate or even provoke mutual shut-off of n- and p-channel devices 104, 108 even when over-voltage or over-current are not by themselves significant enough to cause switch-off. Of course, TBU 102 will switch off in the case of a critical combination of any of these three factors.
  • Variable resistor 116 and sensor 114 of temperature control unit 112 can be integrated on the same die with TBU 102 or in the same package (not shown) . Because of the high-performance of TBU 102, apparatus 100 provides temperature-dependent transient protection while satisfying the stringent requirements dictated by sensitive circuits, e.g., telecommunication circuits. In addition, apparatus 100 is simple in construction, requires few parts and is highly integrable.
  • Fig. 4 is a diagram of an apparatus 120 of the invention implemented with a bi-directional TBU 122.
  • Bi-directional TBU 122 has two n-channel devices 124, 126 and one p-channel device 128 interconnected in the manner described above with reference to Fig. 2.
  • Two current limiters 130, 132 are used to ensure appropriate routing of current between devices 124, 126, 128.
  • Current limiters 130, 132 can be diodes, resistors, transistors, current sources or combinations thereof.
  • Apparatus 120 has a temperature control unit 134 consisting of a temperature sensor 136 and an element 138 connected with TBU
  • Temperature sensor 136 is internal, i.e., it is located within TBU 122, for measuring a sensed temperature T 3 in a local area and communicating T 3 to element 138.
  • Element 138 is a variable resistor that can change its resistance value in response to a signal from sensor 136 indicative of T 3 .
  • TBU 122 is initially driven to block positive surges by altering bias voltages V n and V p in concert such that devices 124, 126 and 128 mutually switch off to block a transient of either polarity, i.e., either a positive or negative over-voltage or over-current.
  • Temperature control unit 134 further adjusts bias voltages V n and V p in response to sensed temperature T 3 communicated by sensor 136.
  • the signal from sensor 136 indicative of T 3 changes the resistance of variable resistor 138.
  • bias voltages V n and V p are adjusted in response to sensed temperature T 3 .
  • Variable resistor 138 and sensor 136 are calibrated such that when sensed temperature T 3 is within an acceptable range the resistance of resistor 138 is negligibly small. Thus, there is no or only a negligible effect on bias voltages V n and V p . TBU 122 will only switch off in this condition when either a positive or negative spike causes mutual switch off of devices 124, 126 and 128. When sensed temperature T 3 falls outside the acceptable range, resistor 138 assumes a significant resistance value. The value is sufficiently large to cause the mutual shut-off of n- and p-channel devices 124, 126 and 128 even when there is no over-voltage or over-current. Of course, TBU 122 will also switch off in the case of a combination of any of these three factors .
  • variable resistor 138 and sensor 136 of temperature control unit 134 can be integrated on the same die with TBU 102 or in the same package (not shown) . Because of the high-performance of TBU 122, apparatus 120 provides temperature-dependent transient protection while satisfying the stringent requirements dictated by sensitive circuits. Furthermore, apparatus 120 is simple in construction, requires few parts and is highly integrable .
  • an apparatus 140 has a TBU 142 that uses two n-channel devices 144, 146, in this case MOSFETs, and a PTC 148 that is interconnected with them.
  • PTC 148 is interconnected in the S-S interconnection of devices 144, 146.
  • PTC 148 can be a low voltage and low nominal resistance device, e.g., 10 ⁇ and is preferably sandwiched between devices 144, 146 to provide for a good thermal contact. The thermal contact is indicated by the dashed outline 150.
  • PTC 148 replaces the p-channel device employed in the previous embodiments.
  • TBU 142 is bi-directional and the interconnection is performed such that a transient alters a resistance of PTC 148 and a bias voltage V n of n-channel devices 144, 146. The effect is that n-channel devices 144, 146 and PTC 148 mutually switch off to block the transient.
  • any heat generated in high voltage n-channel devices 144, 146 heats up PTC 148 and causes it to trip. Once tripped, the resistance of PTC 148 will increase and cause MOSFETs 144, 146 to pinch-off or mutually switch off, therefore limiting through current while maintaining TBU 142 at a set temperature, e.g., 125 degrees.
  • the amount of negative feedback generated ensures that MOSFETs 144, 146 let through enough current to keep PTC 148 hot and tripped. In practice, the dissipation from TBU 142 to stay tripped or switched off should be about 1.5 Watts.
  • TBU can be made very low resistance for high current operation at low voltage, e.g., 110 V ac.
  • the response time of TBU 142 can be on the order of micro-seconds for current limiting and the switch off times on the order of 0.1 sec (as dictated by PTC 148) .
  • TBU 142 can handle a maximum impulse voltage in excess of 900 V.
  • apparatus 140 can have a temperature control unit 152 in communication with TBU 142.
  • unit 152 can be connected to PTC 148 for performing adjustments of its temperature response or with TBU 142 for adjusting the bias voltage V n of any of MOSFETs 144, 146.
  • Fig. 6 is a diagram of a preferred embodiment of a uni- directional apparatus 160 that employs a TBU 162 with FETs 164, 166.
  • TBU 162 has junction-gate field effect transistor (PJFET) 164 and metal-oxide-semiconductor field effect transistor (MOSFET) 166 interconnected source-to-source and drain-to-gate.
  • An element 168 of a temperature control unit 170 is a transistor or a switch connected between the sources of PJFET 164 and MOSFET 166.
  • a temperature sensor 172 is provided for measuring a sensed temperature T 3 locally.
  • switch 168 responds to sensed temperature T 3 and adjusts bias voltage by switching from closed to open-circuit condition, thus making a discontinuous change in resistance.
  • switch 168 is replaced by other variable circuit element selected from among resistors, transistors, PTCs, other positive temperature coefficient elements, current-limiters and diodes .
  • a negative temperature coefficient element may be use to compensate TBU 162 for increasing temperature.
  • element 168 itself is a temperature-sensitive element. It thus represents unit 170 by itself and performs the function of temperature sensor 172 by measuring T 3 locally and responding to the value of T 3 .
  • Fig. 7 shows the diagram of a preferred embodiment of an apparatus 180 with a bi-directional TBU 182 employing two NMOS transistors 184, 186, a PJFET 188 and two diodes 190, 192 as current limiters .
  • a temperature control unit 194 is indeed a single element, specifically a switch.
  • a variable resistor 196 such as a diffused resistor, polysilicon resistor or thin film resistor can be used.
  • any suitable temperature-sensitive switching element can be adapted to operate as control unit 194. Suitable elements include positive ' and negative temperature coefficient elements as well as other semiconductor devices including transistors, thermistors and diodes.
  • TBU 182 effectuates mutual switching off of NMOS transistors 184, 186 and PJFET 188 in response to positive and negative surges as well as over-temperature.
  • the response to temperature is dictated by whether the element used as control unit 194 has a positive or negative temperature coefficient.
  • Fig. 8 illustrates an apparatus 200 that employs uni ⁇ directional TBU 162 as shown in Fig. 6.
  • the temperature control unit 170 has a remote temperature sensor 204 for measuring sensed temperature T 3 in a remote area, meaning away from the TBU itself.
  • the operation of apparatus 200 is otherwise analogous to apparatus 160 and admits of same alternatives.
  • Apparatus 210 employs a bi-directional TBU 212.
  • TBU 212 has two NMOS transistors 214, 216, a PJFET 218 and two diodes 220, 222 serving as current limiters.
  • a depletion mode device 224 is inserted in series with PJFET 218 to switch off TBU 212 in response to a sensed temperature T 3 measured by a remote temperature sensor 226.
  • the choice of local or remote temperature sensing depends on the intended application of the apparatus.
  • the temperature can be sensed locally in the S-S connection, at the n- and p-channel devices, within the TBU or outside the TBU.
  • variable resistors can be replaced with thermistors, diode connected transistors and various types of other suitable transistors and semiconductor devices.
  • the apparatus is integrated.
  • the TBU and the temperature control unit are integrated on one die or in the same package.
  • the invention and its various embodiments provide for an alternative protection device that is capable of simultaneous over-voltage, over-current and over-temperature protection while satisfying stringent requirements laid down by sensitive circuits.
  • the temperature-dependent transient blocking device is simple in construction, requires few parts and is highly integrable either on the same die as the remainder of the device or at least the TBU or in the same package with the TBU.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un appareil et un procédé pour un blocage de phénomène transitoire dépendant de la température, comprenant une unité de blocage de phénomène transitoire (TBU) qui utilise au moins un dispositif à n canaux de modes d'appauvrissement, interconnecté à au moins un dispositif à p canaux de mode d'appauvrissement. L'interconnexion est effectuée, de manière à ce qu'un phénomène transitoire modifie la tension de polarisation (Vp) du dispositif à p canaux et la tension de polarisation (Vn) du dispositif de n canaux en même temps, de façon à effectuer leur interruption mutuelle pour bloquer le phénomène passager. L'appareil présente une unité de régulation de la température qui est en communication avec l'unité de blocage de phénomène transitoire et règle au moins les tensions de polarisation (VP, Vn) en réponse à une température détectée (Ts), tout en permettant à l'appareil de répondre également à une surtempérature. Dans des modes de réalisation de l'invention, le dispositif à p canaux est remplacé par une thermistance à coefficient de température positif (PTC). L'unité de régulation de la température peut être utilisée dans n'importe quel élément de circuit adapté, notamment, une thermistance à coefficient de température positif, une résistance, un élément à coefficient de température négatif, un élément à coefficient de température positif, un transistor, une diode.
PCT/US2005/040555 2004-11-09 2005-11-09 Appareil et procede pour bloquer un phenomene transitoire dependant de la temperature WO2006053025A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US62639504P 2004-11-09 2004-11-09
US62637904P 2004-11-09 2004-11-09
US60/626,379 2004-11-09
US60/626,395 2004-11-09

Publications (2)

Publication Number Publication Date
WO2006053025A2 true WO2006053025A2 (fr) 2006-05-18
WO2006053025A3 WO2006053025A3 (fr) 2008-05-08

Family

ID=36337172

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/040555 WO2006053025A2 (fr) 2004-11-09 2005-11-09 Appareil et procede pour bloquer un phenomene transitoire dependant de la temperature

Country Status (1)

Country Link
WO (1) WO2006053025A2 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142115A (en) * 1975-12-12 1979-02-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a thermal protective device
US4811156A (en) * 1988-02-26 1989-03-07 Cherne Medical, Inc. Medical current limiter
US5196980A (en) * 1991-01-28 1993-03-23 John Fluke Mfg. Co., Inc. Low impedance, high voltage protection circuit
US6100745A (en) * 1998-08-10 2000-08-08 Johnson Controls Technology Company Combination positive temperature coefficient resistor and metal-oxide semiconductor field-effect transistor devices
US6181541B1 (en) * 1998-10-22 2001-01-30 Shukri Souri Transistor-PTC circuit protection devices
US6963477B2 (en) * 2002-08-29 2005-11-08 Murata Manufacturing Co., Ltd. Overheat protection circuit
US7061739B2 (en) * 2000-06-15 2006-06-13 Siemens Aktiengesellschaft Overcurrent protection circuit

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142115A (en) * 1975-12-12 1979-02-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a thermal protective device
US4811156A (en) * 1988-02-26 1989-03-07 Cherne Medical, Inc. Medical current limiter
US5196980A (en) * 1991-01-28 1993-03-23 John Fluke Mfg. Co., Inc. Low impedance, high voltage protection circuit
US6100745A (en) * 1998-08-10 2000-08-08 Johnson Controls Technology Company Combination positive temperature coefficient resistor and metal-oxide semiconductor field-effect transistor devices
US6181541B1 (en) * 1998-10-22 2001-01-30 Shukri Souri Transistor-PTC circuit protection devices
US7061739B2 (en) * 2000-06-15 2006-06-13 Siemens Aktiengesellschaft Overcurrent protection circuit
US6963477B2 (en) * 2002-08-29 2005-11-08 Murata Manufacturing Co., Ltd. Overheat protection circuit

Also Published As

Publication number Publication date
WO2006053025A3 (fr) 2008-05-08

Similar Documents

Publication Publication Date Title
US7369387B2 (en) Apparatus and method for temperature-dependent transient blocking
US6340878B1 (en) Silicon equivalent PTC circuit
US6331763B1 (en) Devices and methods for protection of rechargeable elements
TWI506907B (zh) 整合的過電流及過電壓保護裝置及用於過電流及過電壓保護之方法
US6600641B2 (en) Overcurrent protection for the series fuse
US8174811B2 (en) Overheat protection device and electrical system having same
US7492566B2 (en) Low resistance transient blocking unit
US4800331A (en) Linear current limiter with temperature shutdown
US20060098373A1 (en) Intelligent transient blocking unit
KR101446994B1 (ko) Mit 기술을 적용한 자동 고온 및 고전류 차단 방법 및 이러한 방법을 사용하는 스위치
EP0566594B1 (fr) Dispositif de protection contre les courants de surcharge
US5875085A (en) Lithium electronic-mechanical automatic protection system (LEAPS)
WO2006138119A2 (fr) Appareil de blocage de phenomene transitoire avec remise a zero
WO2000024105A1 (fr) Dispositifs de protection de circuits
WO2007058799A2 (fr) Unite de blocage de transitoires possedant un shunt pour une protection contre les surtensions
US20060238936A1 (en) Apparatus and method for transient blocking employing relays
TW202213702A (zh) 能夠操作以提供過電流保護的電路及耦合其的裝置
EP0729185B1 (fr) Améliorations de ou en relation avec des dispositifs de contrôle d'état de charge
US20070035906A1 (en) Transient blocking unit
JP2022013740A (ja) 過電流保護のためのディプリーションモードｍｏｓｆｅｔ
WO2006053025A2 (fr) Appareil et procede pour bloquer un phenomene transitoire dependant de la temperature
JP2003188697A (ja) 過熱保護機能半導体スイッチ
JP2001007294A (ja) 半導体装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KN KP KR KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase

Ref document number: 05820877

Country of ref document: EP

Kind code of ref document: A2