WO2006051983A1

WO2006051983A1 - Surface status measuring method, surface status measuring device, microscope and information processor

Info

Publication number: WO2006051983A1
Application number: PCT/JP2005/020942
Authority: WO
Inventors: Nobuo Satoh; Kei Kobayashi; Hirofumi Yamada; Kazumi Matsushige
Original assignee: Kyoto University
Priority date: 2004-11-15
Filing date: 2005-11-15
Publication date: 2006-05-18
Also published as: JP2006138821A; JP4621908B2

Abstract

Relative positions of a plurality of probes (2), which are facing an object (1) to be measured, to the object (1), and a relative position between the probes (2) are controlled. A detection signal generated by physical phenomenon between the object (1) and the probes (2) is detected. The surface status of the object (1) is measured from the detection signal. Thus, a surface status measuring method and a surface status measuring device for accurately measuring the surface status of the object to be measured are provided.

Description

Specification

Surface condition measuring method, surface condition measuring apparatus, microscope, information processing apparatus

The present invention is based on a displacement detection circuit and a probe holder in order to stably control the position of two or more probes (multi-probes) relative to each other, and the distance between the multi-probes with high accuracy and small size. The present invention relates to a surface state measuring method, a surface state measuring device, a microscope using the same, and an information processing device capable of measuring the surface state of an object to be measured at the molecular level by controlling Background art

[0002] In storage devices such as memories, in order to realize recording at the molecular level for high density recording, each characteristic (electrical characteristic, optical characteristic, magnetic characteristic) of the molecule used for the molecular material of the device Needs to know enough of at least one of mechanical rigidity etc.)

[0003] Therefore, conventionally, as a method of measuring the characteristics of the above-mentioned molecules, an electrode provided with a gap of about several microns is manufactured by a microfabrication technique, and various characteristics of the accidentally cross-linked molecules are It is known that it can measure.

However, in the above-described method, there is a limit to the measurement of molecular level and molecular properties on the scale of nanometer / scale because the above-mentioned microfabrication is limited by “diffraction limit of light”.

On the other hand, an atomic force microscope, which is a kind of probe microscope having an atomic level resolution, is expected as a method of evaluating a fine shape.

Atomic force microscopy (AFM) is expected as a means for observing the surface shape of a novel insulating material, and is under investigation. The principle is that the atomic force acting between the probe with a sufficiently sharp tip (tip) and the sample is measured as the displacement of the spring element to which the probe is attached, and the displacement of the spring element is kept constant. Meanwhile, the sample surface is scanned, and the shape of the sample surface is measured by using a control signal for keeping the displacement amount of the spring element constant as shape information. As a displacement detection means of a spring element, an optical method (optical interference method, optical lever method) and a self-detection method (piezoresistive detection method, piezoelectric detection method) for detecting deformation strain of a panel element as an electric signal are used. is there.

The probe used in the above atomic force microscope is formed at the tip of a cantilevered support member called a cantilever, and is mainly in the form of a square supper. The material of the above probe is silicon. When silicon is used for the probe, the probe is processed using an anisotropic etching technique.

Such atomic force microscope (G. Binnig, C. F. Quate, Ch. Gerber: Phys. Rev. Lett.

56 (1986) 930.) is expected to be able to measure the characteristics of various molecular devices as well as information processing equipment such as memories (storage devices) by using the cantilever as a probe for characteristic measurement.

Probe control circuit power of such an information processing apparatus In Patent Document 1, a signal generated from a physical phenomenon of a probe and a medium opposed to this is detected as a detection signal, and the probe is detected by a position control signal based on the detection signal. It has been proposed to perform position control of

Patent Document 1: Japanese Patent Publication JP-A-8-249732 (release date: September 27, 1996) Disclosure of the Invention

Problem that invention tries to solve

[0011] In the conventional configuration and method described above, the distance between the probes and the sample is controlled while the distance and the relative position between the plurality of probes become unstable. As a result, in the above-described conventional configuration and method, various characteristics (such as the electrical characteristics, optical characteristics, magnetic characteristics, mechanical rigidity, etc.) of the molecular material etc. can be accurately measured in the measurement by a plurality of probes. There was a problem that was happening.

The present invention has been made in view of the above problems, and its object is to control the distance or relative position between two or more probes by controlling the distance or relative position between the probes. Surface state measurement method, surface state measurement device capable of accurately measuring various characteristics (such as the electrical characteristics, optical characteristics, magnetic characteristics, mechanical rigidity, etc.) of materials and the like (surface characteristics, etc. It is to provide. Means to solve the problem

The surface state measuring apparatus according to the present invention, in order to solve the above problems, a plurality of probes facing the measurement object, and a probe drive unit for moving each of the probes with respect to the measurement object. And a detection unit that detects and outputs a detection signal generated from a physical phenomenon between the measurement object and each probe, and a first control unit for controlling c with a position control signal based on the detection signal. And a measurement unit that measures the surface state of the measurement object from the detection signal.

According to the above configuration, the probe drive unit moves or scans each probe with respect to the surface of the measurement object, so that the detection unit can obtain a detection signal associated with the scan. The detection signal force accompanying scanning can also measure the surface condition (for example, surface shape) of the measurement object.

Furthermore, since the above configuration includes the first control unit for moving the plurality of probes facing the measurement object to control the relative position between the probes, the configuration of the plurality of probes is Position control can be performed respectively. Here, the relative position between the probes is a concept including the spatial arrangement of a plurality of probes and the distance and spacing between the probes. As a specific example, the relative position between two probes can be expressed by the directions [longitudinal, horizontal, height] to each other and the distance between the probes.

This makes it possible to stably control the distance between a plurality of probes and the gap length which is the distance between each of the probes and the measurement object, so that the surface state of the measurement object has a nanometer scale, ie, a molecule. It can be measured stably at the level or atomic level.

That is, according to the above configuration, since the surface state of the measurement object can be stably measured on the nanometer scale, the resolution of a microscope such as an atomic force microscope can be improved, and the information is a storage device such as a memory. If it is used for analysis of the processing device, the information processing amount of the information processing device can be improved!

[0018] In the above-mentioned surface state measurement device, the first control unit preferably brings the probes close to each other!

In the above-mentioned surface condition measuring device, each of the probes is preferably disposed so that the tip portions of the respective probes are close to each other!,. The surface state measurement apparatus may further include a cantilever having the probe at its tip.

In the surface state measuring apparatus, the tip of each of the probes is preferably formed so as to extend in the direction opposite to the object to be measured.

In the above-mentioned surface state measuring apparatus, each of the probes is preferably formed with a sharp tip!

In the above-described surface state measurement apparatus, a protrusion extending along the longitudinal direction of each probe may be formed at the tip of each of the probes.

According to the above configuration, since the projection is formed to extend in the longitudinal direction of each probe, the rigidity of each probe can be softened to reduce its resonance frequency. In addition, since each probe becomes longer due to the formation of the protrusion, the risk of damaging the object to be measured during measurement can be reduced.

[0025] In the surface state measurement device, the protrusion may be formed to have a pointed tip.

[0026] In the above-mentioned surface state measuring device, the protruding portion may have a bending portion in which the tip end side is bent toward the measurement object! //.

According to the above configuration, since the tip end side of the bending portion is bent toward the measurement object, the rigidity of the probe can be softened and the resonance frequency thereof can be reduced. In addition, when the respective probes are disposed to face each other, the leading end portions of the respective probes interact with each other, so that stable measurement can be realized. Furthermore, if the above configuration is adopted, the position of the probe is less likely to be behind the object to be measured, so the operability at the time of measurement can be enhanced.

[0028] In the surface state measurement device, the physical phenomenon is preferably at least one selected from a group force which is also an atomic force, a tunneling current, and an electrostatic force.

The surface state measuring apparatus preferably further includes a second control unit that controls each probe drive unit so that the distance between each probe and the measurement target is constant based on the detection signal. ,.

According to the above configuration, each probe can be independently controlled while controlling the spacing between the plurality of probes. Can be driven.

Preferably, the measurement unit includes a probe position detection unit that detects the position of each probe.

According to the above configuration, since the absolute position of each probe can be monitored by the probe position detection unit, control of each probe can be made easier.

A microscope of the present invention is characterized by including the surface state measuring device described in any of the above.

An information processing apparatus according to the present invention is characterized by including the surface state measuring apparatus described in any of the above.

[0034] In the surface state measuring method of the present invention, in order to solve the above-mentioned problem, the measurement object is scanned while controlling the relative position between the plurality of probes facing the measurement object, and the measurement object is measured. And detecting the detection signal generated from the physical phenomenon between each probe, and measuring the surface condition of the measurement object.

[0035] In the surface state measurement method, it is preferable to control the relative position between each of the probes and the measurement object.

In the surface state measuring method, preferably, the physical phenomenon is at least one selected from atomic force, tunneling current, and electrostatic force.

[0037] In the surface state measurement method, it is preferable to move the respective probes so that the tip portions of the respective probes come close to each other.

(Effect of the Invention)

As described above, the surface state measuring apparatus according to the present invention includes a plurality of probes facing the object to be measured, a probe drive unit for moving each of the probes with respect to the object to be measured, the object to be measured, and A detection unit for detecting and outputting a detection signal generated from a physical phenomenon between the probes; a first control unit for controlling the relative position between the probes by the position control signal based on the detection signal; And a measurement unit configured to measure the surface state of the measurement object from the signal.

Therefore, according to the present invention, position control of a plurality of probes can be performed respectively. Since the gap length that influences the measurement of molecular level and atomic level can be stably controlled, the surface state of the object to be measured can be stably measured on the nanometer scale.

That is, according to the present invention, since the surface state of the measurement object can be stably measured on the nanometer scale, resolution of a microscope such as an atomic force microscope can be improved. Furthermore, when the present invention is used for analysis of an information processing apparatus that is a storage device such as a memory, the information processing amount of the above information processing apparatus can be improved!

Brief description of the drawings

FIG. 1 (a) is a schematic front view of each probe showing position control between each probe in the surface state measurement method of the present invention.

FIG. 1 (b) is a waveform diagram showing changes in detection signals before and after the probes approach each other in position control between the probes in the surface state measurement method of the present invention.

FIG. 2 is a block diagram of a surface state measuring device according to the present invention.

FIG. 3 (a) is a schematic front view of the measurement object and the probe, showing position control between the measurement object and the probe in the surface state measurement method of the present invention.

[FIG. 3 (b)] shows position control between the measurement object and the probe in the surface state measurement method of the present invention, and the measurement object and the probe approach each other (contact) and approach each other (contact) It is each waveform chart which shows change of a detection signal after.

FIG. 4 is a schematic front view of each probe showing a modification of the surface state measurement method described above.

FIG. 5 is a schematic front view of each probe showing another modification of the surface state measurement method described above.

FIG. 6 is a schematic front view of each probe, showing still another modified example of the surface state measuring method described above.

FIG. 7 (a) is a front view showing a modified example of the probe.

FIG. 7 (b) is a front view showing another modified example of the probe.

[FIG. 8 (a)] As a modification of the above-mentioned probe, it is a top view showing the form of two probes. FIG. 8 (b) is a plan view showing a form in which three probes are provided as a modified example of the above-mentioned probe.

FIG. 8 (c) is a plan view showing a form of probe force as a modified example of the probe.

[FIG. 8 (d)] As a modification of the above-mentioned probe, it is a plan view showing a form of eight probes.

FIG. 9 is a schematic front view of the surface state measurement device when atomic force is used for physical phenomena.

FIG. 10 is a schematic view of each atom for explaining the atomic force.

FIG. 11 is a graph showing the relationship between the interatomic force and the interatomic distance between the atoms.

FIG. 12 is a schematic view of each of the charges generating the electrostatic force in order to explain the electrostatic force as a physical phenomenon.

FIG. 13 is a schematic front view showing an example of the surface state measuring method of the present invention using the surface state measuring device.

Explanation of sign

[0042] 1 Measurement object

2 probe

6 cantilever

7 1st drive part

9 3rd drive part

BEST MODE FOR CARRYING OUT THE INVENTION

One embodiment of the surface state measuring device according to the present invention will be described below with reference to FIG. 1, FIG. 1 and FIG. That is, in the surface state measurement apparatus, as shown in FIG. 2, a plurality of probes 2 (only one is shown in FIG. 2) is provided to face the measurement object 1. The measurement object 1 is mounted on a mounting table 3 which moves in a two-dimensional manner in an XY direction (that is, a horizontal direction substantially parallel to the surface of the measurement object 1) shown in FIG.

The shape of each of the probes 2 has a tapered shape which is gradually tapered toward the tip. The shape of each probe 2 is arbitrary as long as the interaction can be detected as described later, and may be, for example, a triangular pyramid shape, a quadrangular pyramid shape, or a conical shape. The material of each probe 2 is arbitrary as long as it can detect the interaction described later. As a suitable material which can be easily formed into the above-mentioned shape, for example, silicon can be mentioned. When silicon is used for each probe 2, an anisotropic etching technique is suitable for its formation.

A scan unit 4 for driving the mounting table 3 is attached as a probe drive unit. A scan system 5 for generating control signals for controlling the scan unit 4 is provided.

On the other hand, in the surface state measuring apparatus, the cantilever 6 having the probe 2 at its tip is attached in a pipe shape of a cantilever beam with a length of 0.1 mm to 1 mm. The probe 2 is provided at the tip of the cantilever 6 so that its tip is directed to the surface of the measurement object 1. Also, each cantilever 6 is attached so that the tips of the tip portions provided with the respective probes 2 abut each other, and the longitudinal direction of each cantilever 6 is substantially parallel to the surface of the measurement object 1 . As a material of the cantilever 6, it may be conductive so as to detect the interaction and have rigidity enough to withstand the excitation described later. For example, suitable materials for the cantilever 6 include aluminum, copper, alloys thereof, carbon and the like.

At the proximal end side of the cantilever 6, the first drive unit 7 for reciprocating the probe 2 in the vertical direction (z direction in FIG. 2) and the probe 2 are orthogonal to the longitudinal direction of the cantilever 6. Second drive unit 8 for reciprocating in the horizontal direction (y direction in FIG. 2) and third drive for reciprocating the probe 2 in the direction along the longitudinal direction of cantilever 6 (X direction in FIG. 2) The parts 9 are each formed as a probe drive part.

The first driving unit 7, the second driving unit 8, and the third driving unit 9 respectively drive the probe 2 in a micron order (general maximum driving distance is about 0.1 m to 10 m). It may be any one as long as it can be used, but specific examples thereof include an automatic drive by a piezoelectric element, a stepping motor or an impact stage, or a fine movement drive mechanism using a manual screw type. As the above-mentioned fine movement driving mechanism, in particular, one that can also be a piezoelectric element is preferable. Therefore, the first drive unit 7, the second drive unit 8, and the third drive unit 9 change the relative positions of the plurality of probes 2 to one another, and the relative position of the respective probes 2 to the surface of the measurement object 1 Each can be moved to change its position.

Further, in the above-mentioned surface condition measuring apparatus, the position of the probe 2 (especially in the z direction) is optically A semiconductor laser 10, a mirror 11 and a photodiode 12 are mounted for detection in the lever method. For this optical detection, the opposite surface (rear surface) of the attachment position of the probe 2 at the tip of the cantilever 6 is preferably mirror-finished. The semiconductor laser 10 emits laser light to the opposite surface. The mirror 11 guides the reflected light of the laser light with the above-described opposite surface force to the light receiving surface of the photodiode 12. The photodiode 12 converts the received light into an electrical signal including a positional information signal of the probe 2 by, for example, a push-pull method, and outputs the electrical signal.

Furthermore, in the surface state measuring apparatus, when the electric signal is input, the position information signal of the probe 2 is calculated from the electric signal, and the surface shape of the measurement object 1 is calculated from the position information signal. A display 14 for displaying the shape of the surface of the measurement object 1 based on the shape signal, and a memory 15 which is a video RAM for the display 14. It is provided!

Then, in the above-mentioned surface state measuring apparatus, a detection unit 16 which detects and outputs a detection signal generated from a physical phenomenon between the measurement object 1 and each of the probes 2 and a position control signal based on the detection signal A control unit 17 for controlling the relative position between the probes 2 is provided. Examples of the above physical phenomena include interactions such as atomic force, tunneling current and electrostatic force.

When detecting the tunnel current, the detection unit 16 applies a voltage between the measurement object 1 and the probe 2 through the wires A and B, and the distance between the measurement object 1 and the probe 2 It is possible to detect the tunneling current generated when the value approaches 1 nanometer (nm)! Furthermore, the detection unit 16 applies a voltage between the adjacent probes 2 through the wires B, and occurs when the distance between the adjacent probes 2 approaches 1 nanometer (nm) or so. The tunnel current can be detected. These tunnel currents change very accurately with changes in the distance between the probes 2, so that the distance can be detected or controlled with a resolution of at least 0. In m.

The control unit 17 generates surface shape data in two dimensions from the shape signal output from the measurement unit 13 and outputs it to the memory 15, and also generates a physical phenomenon force between the measurement object 1 and each probe 2. Maintain a constant distance between probe 2 and measurement object 1 based on the signal Thus, the first drive unit 7, the second drive unit 8 and the third drive unit 9 can be controlled to feedback-control the position of the probe 2 (that is, the cantilever 6). As shown in FIG. 3 (a), when the probe 2 at the tip of the cantilever 6 approaches the surface of the measurement object 1 on the nanometer scale, as shown in FIG. 3 (b), the feedback control is performed. The amplitude of the detection signal in the detection unit 16 is increased or decreased (or the frequency of the detection signal in the detection unit 16 is increased or decreased).

Furthermore, the control unit 17 can control the scan system 5 so as to scan the surface of the measurement object 1 two-dimensionally with each of the probes 2. Furthermore, the control unit 17 can control the first drive unit 7 to reciprocate the probe 2 at the tip of the cantilever 6 in the vertical direction (z direction), and preferably excites at the resonance frequency of the cantilever 6. It is also possible to shake it.

Next, a surface state measurement method using the above-described surface state measurement device will be described. Figure 1

As shown in (a), in the surface state measurement method described above, the detection unit is a displacement detection mechanism provided on at least one of the probes 2 while exciting each of the probes 2 in order to control the distance between the probes 2. And, by the control unit 17, the third drive unit 9, which is also a piezoelectric element force which is a fine movement drive mechanism, brings the mutual distance closer. At that time, due to the interaction (tunneling current) between the probe 2 and the probe 2 adjacent to each other, as shown in FIG. 1 (b), the displacement is detected by the signal on the probe 2 side having a displacement detection mechanism. . By causing this displacement to reach the set value, stable probe position control can be performed. Generally, when trying to adjust the distance between the probe 2 and the probe 2 by visual inspection etc., there is a possibility that the probe 2 and the probe 2 will be broken by contact or collision, but when using the above displacement detection mechanism There is no such problem.

In the present invention, the relative position between each of the plurality of probes 2 can be controlled by a simple device configuration, and the gap length to the molecule or atom can be stably controlled. Along with dramatically advancing research progress, it can be applied to high resolution scanning tunneling microscopes and storage devices such as memories to increase their storage capacity.

As one modified example of the present embodiment, as shown in FIG. 4, each probe 2 is not excited and each probe 2 is not excited. The tunnel current between the probes 2 may be monitored. Further, as another modification in the present embodiment, as shown in FIG. 5, even if one of the probes 2 is excited while the other is not excited, the atomic force between the probes 2 is monitored. Good. As another modification of this embodiment, as shown in FIG. 6, the atomic force between the probes 2 may be monitored while exciting both of the probes 2.

In the present embodiment, as the shape of the probe 2, a force whose tip is a quadrangular pyramid shape whose force is directed to the surface of the measurement object 1 is illustrated for position control between the respective probes 2. As shown in 7 (a), it is preferable to form in the probe 2 a rod-like protrusion 18 extending in the longitudinal direction of the cantilever 6. It is more preferable that the projecting portion 18 be formed on the proximal end side of the probe 2 which is more desirably formed on the probe 2 on the distal end side of the cantilever 6. In addition, it is preferable that the protrusion 18 be formed so as to be tapered toward the tip thereof so that the tip 18 has a tapered shape.

Furthermore, as shown in FIG. 7 (b), the tip end of the protrusion 18 is bent in the direction of the surface of the measurement object 1 to facilitate position control between the probes 2. It is preferable to have a bent portion 18a. It is more preferable that the bent portion 18a be formed in such a manner that the shape thereof is tapered toward the tip so as to be tapered.

Further, in the present embodiment, as shown in FIG. 8 (a), two probes 2 are provided so as to be in contact with each other. However, as shown in FIG. 8 (b), As shown in Fig. 8 (c), three of them may be provided so that their tip sides are in contact with each other, and four of them may be provided in such a manner that their tip sides are in contact with each other. As shown in), eight pieces may be provided such that their tip sides are in contact with each other.

Hereinafter, as an example of the physical phenomenon, interactions such as atomic force and electrostatic force will be respectively described.

First, the atomic force will be described. As shown in FIG. 9, in the surface state measuring apparatus of the present invention, the atomic force acting between the probe 2 and the surface of the object 1 to be measured is a probe 2 Can be detected as the deflection of the cantilever 6. By controlling the position of the probe 2 so as to make the deflection constant and scanning the surface of the measurement object 1 two-dimensionally, the surface shape can be measured and imaged. In FIG. 9, (b) is It is the schematic diagram which expanded a part of (a).

The atomic force is an interaction between nonpolar neutral atoms, as shown in FIG. 10, and the interaction has a Lennard-Jeyons (Jones) type potential. It can be approximated. The relationship between potential energy U and interatomic distance r is

0 0

It is expressed by equation (1).

[0060] [Equation 1] _{0 0} (r ₀ )

Is the cohesive energy, _σ is the equilibrium interatomic distance.

[0061] The atomic force F acting between these atoms is represented by the following formula (2).

[0062] [Number 2]

Fa

The result of plotting the above equation (2) with substitution of specific numerical values and plotting is shown in FIG. According to Fig. 11, it can be seen that attractive force works when the interatomic distance is about 0.2 nm or more, and repulsive force works when the interatomic distance approaches less than about 0.2 nm.

Thus, an attractive force is generated between the tip of the probe 2 and the surface of the measurement object 1 at a long distance (0.2 nm or more). This attraction is due to the dispersive force (in other words, the cohesion). The dispersive force is the force acting between these dipoles, which are generated by the momentary dipole (even nonpolar atoms and momentarily charge bias occurs) in the other atom. The larger the atomic molecule, the weaker the ability to hold an electron, and the easier it is to generate an instantaneous dipole, resulting in an increase in the dispersive power.

On the other hand, a repulsive force works at a short distance where the distance between the tip of the probe 2 and the surface of the measurement object 1 is less than 0.2 nm. This repulsion is due to exchange interaction. When the electron clouds of two atoms overlap each other, the electron cloud can not shield the positive charge of the nucleus electrostatically, and the Coulomb (Coulomb) force is generated between the positive charges in each nucleus. Living You Also, due to Pauli's prohibition, electrons of the same energy level can not occupy the same space. As a result, when the two atoms approach a short distance of less than 0.2 nm, the electron cloud is distorted, and as a result, a force is exerted between the tip of the probe 2 and the surface of the measurement object 1.

Next, as another example of the physical phenomenon, interaction such as electrostatic force will be described. The electrostatic force is the distance, as shown in Figure 12: Each electrostatic charge Q, the electrostatic force F acting between Q

The electrostatic force F is represented by the following formula (3).

0

[0065] [Number 3]

F ₀ = k ^.. (3) Here, k = 8. 99 X 10 ⁹ (Nm ² ZC ² ).

When electrostatic force is used as a physical phenomenon, in the surface state measurement device of the present invention, the electrostatic force acting between the probe 2 and the surface of the measurement object 1 is attached to the probe 2! The surface shape can be measured and imaged by two-dimensionally scanning the shape of the surface of the measurement object 1 by detecting as a deflection and controlling the position of the probe 2 so as to make the deflection constant. .

According to the present invention, as shown in FIG. 13, a plurality of probes 2 can be controlled on the nanoscale independently of each other. Therefore, according to the present invention, in the nanotechnology field, characteristics of individual functional elements (including molecules) la formed on the surface of the measurement object 1, for example, pentacene molecules (how much current flows, how much It is possible to directly evaluate

Moreover, according to the atomic force microscope to which the present invention is applied, since the distance between each of the plurality of probes 2 can be stably controlled, a large number of surface shapes can be obtained at one time by a large number of probes 2. It can be observed. This makes it possible to quickly measure the surface of the measurement object 1.

Industrial Applicability

The surface condition measuring method and surface condition measuring apparatus of the present invention divide the surface condition of the object to be measured. Since measurement can be performed accurately at the child level, it can be suitably used for information processing fields such as surface shape measurement devices such as microscopes, storage fields such as semiconductor measurement fields and semiconductor manufacturing fields, and memories.

Claims

The scope of the claims

[1] with multiple probes facing the object to be measured

A probe drive unit that moves each of the probes with respect to the measurement target, and a detection unit that detects and outputs a detection signal generated from a physical phenomenon between the measurement target and each of the probes;

A first control unit for controlling a relative position between the probes by a position control signal based on the detection signal;

What is claimed is: 1. A surface state measurement device comprising: a measurement unit that measures the surface state of the measurement object from the detection signal.

[2] The surface condition measuring apparatus according to claim 1, wherein the first control unit causes the probes to be close to each other.

[3] The surface condition measuring apparatus according to claim 1 or 2, wherein the respective probes are arranged such that the tip portions of the respective probes are close to each other.

[4] The surface state measuring apparatus according to any one of claims 1 to 3, further comprising a cantilever having the probe at its tip.

[5] The surface state measuring apparatus according to claim 4, wherein a tip of each of the probes is set to extend in a direction facing the object to be measured.

[6] The surface condition measuring device according to claim 5, wherein each of the probes is formed with a sharp tip.

[7] The surface state measurement according to any one of [4] to [6], wherein a protrusion extending along the longitudinal direction of the cantilever is formed at the tip of the cantilever. apparatus.

[8] The surface state measuring device according to claim 7, wherein the projecting portion is formed to have a pointed tip.

[9] The surface state measuring device according to claim 7 or 8, wherein the projecting portion includes a bending portion that is bent at a distal end side toward the object to be measured.

[10] The surface according to any one of claims 1 to 9, wherein the physical phenomenon is at least one selected from the group consisting of atomic force, tunneling current, and static electricity. Condition measuring device.

[11] The apparatus according to [1], further comprising: a second control unit configured to control each probe drive unit so as to make the distance between each probe and the measurement object constant based on the detection signal. The surface state measuring device according to any one of the above.

[12] The surface condition measuring apparatus according to any one of claims 1 to 11, wherein the measuring unit includes a probe position detecting unit that detects the position of each probe.

[13] A microscope characterized by having the surface state measuring device according to any one of claims 1 to 12.

[14] An information processing apparatus characterized by including the surface state measuring apparatus according to any one of claims 1 to 12.

[15] The object to be measured is scanned while controlling the relative position between the plurality of probes facing the object to be measured, and a detection signal resulting from the physical phenomenon between the object to be measured and each probe is detected.

Said detection signal force The surface state measurement method characterized by measuring the surface state of the said measurement object.

[16] The surface state measuring method according to claim 15, characterized in that the relative position between each of the probes and the measurement object is controlled.

[17] The surface state measuring method according to claim 15 or 16, wherein the physical phenomenon is at least one selected from the group consisting of atomic force, tunneling current, and static electricity.

[18] The surface state measuring method according to any one of claims 15 to 17, wherein each of the probes is moved so that the tips of the respective probes are close to each other.